JP4859703B2

JP4859703B2 - Substrate processing equipment

Info

Publication number: JP4859703B2
Application number: JP2007042106A
Authority: JP
Inventors: 考次古市; 智巳岩田
Original assignee: Screen Holdings Co Ltd; Dainippon Screen Manufacturing Co Ltd
Current assignee: Screen Holdings Co Ltd; Dainippon Screen Manufacturing Co Ltd
Priority date: 2007-02-22
Filing date: 2007-02-22
Publication date: 2012-01-25
Anticipated expiration: 2027-02-22
Also published as: JP2008205360A

Description

本発明は、半導体ウエハや液晶表示装置用のガラス基板（以下、単に基板と称する）に対して所定の処理を施す基板処理装置に係り、特に、処理槽に処理液を供給しつつ、処理液面の上方にて水平方向へ乾燥気体を供給するとともに処理液から基板を引き上げて基板に対して乾燥処理を行う技術に関する。 The present invention relates to a substrate processing apparatus that performs a predetermined process on a glass substrate (hereinafter simply referred to as a substrate) for a semiconductor wafer or a liquid crystal display device, and in particular, while supplying a processing liquid to a processing tank, the processing liquid The present invention relates to a technique for supplying a dry gas in a horizontal direction above a surface and lifting a substrate from a processing liquid to perform a drying process on the substrate.

従来、この種の装置として、処理液を貯留する処理槽と、処理槽の底部から処理液を供給する噴出管と、基板を支持し、処理槽の内部と処理槽の上方とにわたって昇降可能に構成されたリフタと、処理槽の液面近傍に備えられ、一方側から他方側へドライエアを供給するためのノズルとを備えたものが挙げられる（例えば、特許文献１参照）。 Conventionally, as this type of apparatus, a processing tank for storing a processing liquid, an ejection pipe for supplying the processing liquid from the bottom of the processing tank, and a substrate are supported and can be moved up and down over the inside of the processing tank and above the processing tank. The thing provided with the comprised lifter and the nozzle for supplying dry air from the one side to the other side is provided (for example, refer patent document 1).

このように構成された装置では、噴出管から純水を供給させ、処理槽の底部から上方へ向かうアップフローの液流を形成させることで、純水を処理槽から溢れさせる。そして、基板を支持したリフタを下降させて基板を純水に浸漬させ、所定時間の処理の後にリフタを純水から上昇させる。このとき、ノズルからドライエアを水平方向に供給することにより、純水の液面から順次に露出する基板を乾燥させる。
特開平１１−３５４４８８号公報 In the apparatus configured as described above, pure water is supplied from the ejection pipe, and an upward flow of liquid flowing upward from the bottom of the processing tank is formed, thereby overflowing the pure water from the processing tank. Then, the lifter supporting the substrate is lowered to immerse the substrate in pure water, and the lifter is raised from the pure water after the treatment for a predetermined time. At this time, by supplying dry air from the nozzle in the horizontal direction, the substrates sequentially exposed from the liquid surface of pure water are dried.
JP 11-354488 A

しかしながら、このような構成を有する従来例の場合には、次のような問題がある。
すなわち、従来の装置は、アップフローで供給された純水が、処理槽の中央部を上昇して液面近くで左右に分かれ、処理槽の上縁の左右に分かれて溢れる。一方、ノズルから供給されるドライエアは、一方側から他方側へと一方向へのみ供給されている関係上、溢れる純水の流れに逆らう部分が生じる。そのため、ドライエアの流れと純水の流れが反対となる部分において純水の流れに澱みが生じ、純水中のパーティクルの排出効率が低下するので、引き上げてゆく基板がパーティクルで汚染されるという問題がある。 However, the conventional example having such a configuration has the following problems.
That is, in the conventional apparatus, the pure water supplied in the upflow rises in the central part of the processing tank, splits to the left and right near the liquid level, and overflows to the left and right of the upper edge of the processing tank. On the other hand, since the dry air supplied from the nozzle is supplied only in one direction from one side to the other side, a portion that opposes the flow of overflowing pure water occurs. Therefore, in the part where the flow of dry air and the flow of pure water are opposite, stagnation occurs in the flow of pure water, and the discharge efficiency of particles in pure water decreases, so the problem is that the substrate being lifted is contaminated with particles There is.

また、アップフローにより中央部の液面が盛り上がり、乾燥気体によりその部分に波立ちが発生し、純水の液滴が飛散して引き上げ中の基板に付着するので、ウォータマークが発生して乾燥不良を生じることがあるという問題もある。 In addition, the liquid level in the center part rises due to the upflow, and undulations occur in that part due to the dry gas, and the droplets of pure water scatter and adhere to the substrate being pulled up, resulting in water marks and poor drying. There is also a problem that may occur.

本発明は、このような事情に鑑みてなされたものであって、処理液の供給形態を工夫することにより、清浄度高く処理することができ、かつ乾燥不良を防止できる基板処理装置を提供することを目的とする。 The present invention has been made in view of such circumstances, and provides a substrate processing apparatus that can process with high cleanliness and can prevent poor drying by devising the supply form of the processing liquid. For the purpose.

本発明は、このような目的を達成するために、次のような構成をとる。
すなわち、請求項１に記載の発明は、処理液で基板を処理した後、基板を処理液から引き上げつつ乾燥気体で乾燥処理を行う基板処理装置において、処理液を貯留する処理槽と、前記処理槽の上部であって、前記処理槽の上縁から溢れる処理液の液面近傍に設けられた噴射口を有し、前記処理槽内に貯留する処理液面に沿って一方側から他方側へ乾燥気体を供給する乾燥気体供給手段と、前記処理槽の底部両端側に配設され、前記処理槽の底部中央に向けて処理液を供給する一対の噴出管と、基板を支持し、前記処理槽内部の処理位置と処理槽上方にあたる乾燥位置にわたって昇降自在に構成された支持手段と、前記支持手段を処理位置に位置させた状態で、前記一対の噴出管から処理液を供給させて基板に処理を行わせた後、前記乾燥気体供給手段から乾燥気体を供給させつつ前記支持手段を上昇させる際には、前記一対の噴出管のうち、前記乾燥気体供給手段における乾燥気体の排出側に位置する一方の噴出管のみから処理液を供給させ、前記処理槽の上縁から溢れる処理液の液面近傍の流れの方向を前記乾燥気体の流れの方向と一致させる制御手段と、を備えていることを特徴とするものである。 In order to achieve such an object, the present invention has the following configuration.
That is, the invention according to claim 1 is a substrate processing apparatus that performs a drying process with a dry gas while pulling up a substrate from the processing liquid after processing the substrate with the processing liquid, and a processing tank for storing the processing liquid, and the processing An injection port provided in the vicinity of the liquid level of the processing liquid overflowing from the upper edge of the processing tank, from one side to the other side along the processing liquid level stored in the processing tank. A dry gas supply means for supplying a dry gas, a pair of jet pipes that are disposed on both ends of the bottom of the processing tank, and that supplies a processing liquid toward the center of the bottom of the processing tank, and a substrate, support the processing A support means configured to be movable up and down over a processing position inside the tank and a drying position above the processing tank, and with the support means positioned at the processing position, the processing liquid is supplied from the pair of ejection pipes to the substrate. After the treatment, the dry gas When raising the support means while supplying the dry gas from the supply means, the processing liquid is supplied from only one of the pair of jet pipes located on the dry gas discharge side of the dry gas supply means. was supplied, is characterized in that the direction of the vicinity of the liquid surface of the flow of the overflowing treating solution from the upper edge of the treatment tank and a, and control means Ru match the direction of flow of the drying gas.

［作用・効果］請求項１に記載の発明によれば、制御手段は、支持手段を処理位置に位置させた状態で、一対の噴出管から処理液を供給させて基板に処理を行わせた後、処理槽の上縁から溢れる処理液の液面近傍に設けられた乾燥気体供給手段の噴射口から乾燥気体を供給させつつ支持手段を上昇させる際には、一対の噴出管のうち、乾燥気体供給手段における乾燥気体の排出側に位置する一方の噴出管のみから処理液を供給させる。したがって、基板の処理中には、一対の噴出管から供給された処理液が底部中央から液面付近に向かって上昇しつつ処理槽の両側に向かって流れが分かれ、処理槽の両上縁から排出される。基板を引き上げ乾燥させる際には、一対の噴出管のうち乾燥気体の排出側に位置する一方の噴出管のみから処理液を供給させるので、供給された処理液は、処理槽の底部に沿って他方の噴出管側へ向かった後、処理槽の側壁に沿って上昇し、液面付近を乾燥気体の排出側へ向かって流れた後に処理槽の上縁から溢れて排出される。したがって、乾燥気体の供給方向と、処理槽の上縁から溢れる処理液の液面付近における処理液の流れとが一致するので、処理液の流れに澱みが生じにくく、処理液中のパーティクルが効率的に排出される。その結果、引き上げられる基板にパーティクルが付着するのを防止することができ、清浄度高く処理することができる。また、液面の中央部が盛り上がることがなく、乾燥気体により液面中央に波立ちが生じるのを防止することができるので、引き上げ中の基板に飛沫が付着することを防止でき、乾燥不良を防止することができる。 [Operation / Effect] According to the invention described in claim 1, the control means causes the substrate to perform processing by supplying the processing liquid from the pair of ejection pipes in a state where the supporting means is located at the processing position. Then, when raising the support means while supplying the dry gas from the spray port of the dry gas supply means provided in the vicinity of the liquid level of the treatment liquid overflowing from the upper edge of the treatment tank, the drying is performed out of the pair of ejection pipes. The treatment liquid is supplied only from one of the ejection pipes located on the dry gas discharge side of the gas supply means. Therefore, during the processing of the substrate, the processing liquid supplied from the pair of ejection pipes rises from the center of the bottom toward the liquid surface and flows toward both sides of the processing tank, and from both upper edges of the processing tank. Discharged. When the substrate is pulled up and dried, the processing liquid is supplied from only one of the pair of jet pipes located on the dry gas discharge side, so that the supplied processing liquid is along the bottom of the processing tank. After going to the other ejection pipe side, it rises along the side wall of the processing tank, and after flowing near the liquid surface toward the discharge side of the dry gas, it overflows from the upper edge of the processing tank and is discharged. Therefore, the supply direction of the dry gas and the flow of the treatment liquid in the vicinity of the liquid surface of the treatment liquid overflowing from the upper edge of the treatment tank coincide with each other. Are exhausted. As a result, it is possible to prevent particles from adhering to the substrate to be pulled up, and it is possible to process with high cleanliness. In addition, the central part of the liquid level does not swell, and it is possible to prevent the dry gas from causing undulations in the center of the liquid level, thus preventing droplets from adhering to the substrate being pulled up and preventing poor drying. can do.

また、請求項２に記載の発明は、処理液で基板を処理した後、基板を処理液から引き上げつつ乾燥気体で乾燥処理を行う基板処理装置において、処理液を貯留する処理槽と、前記処理槽の上部であって、前記処理槽の上縁から溢れる処理液の液面近傍に設けられた噴射口を有し、前記処理槽内に貯留する処理液面に沿って一方側から他方側へ乾燥気体を供給する乾燥気体供給手段と、前記処理槽の底部両端のうち、前記乾燥気体供給手段における乾燥気体の供給側に配設され、前記処理槽の底部中央へ処理液を供給する第１の方向と、処理槽の上方へ処理液を供給する第２の方向とを切り換え可能な第１の噴出管と、前記第１の噴出管とは前記処理槽の底部における反対側に配設され、前記処理槽の底部中央に向けて処理液を供給する第２の噴出管と、基板を支持し、前記処理槽内部の処理位置と処理槽上方にあたる乾燥位置にわたって昇降自在に構成された支持手段と、前記支持手段を処理位置に位置させた状態で、前記第１の噴出管から第１の方向へ処理液を供給させるとともに、前記第２の噴出管から処理液を供給させて基板に処理を行わせた後、前記乾燥気体供給手段から乾燥気体を供給させつつ前記支持手段を上昇させる際には、前記第２の噴出管からの処理液の供給を停止させるとともに、前記第１の噴出管から第２の方向へ処理液を供給させ、前記処理槽の上縁から溢れる処理液の液面近傍の流れの方向を前記乾燥気体の流れの方向と一致させる制御手段と、を備えていることを特徴とするものである。 The invention described in claim 2 is a substrate processing apparatus that performs a drying process with a dry gas while pulling up the substrate from the processing liquid after processing the substrate with the processing liquid, and a processing tank for storing the processing liquid; An injection port provided in the vicinity of the liquid level of the processing liquid overflowing from the upper edge of the processing tank, from one side to the other side along the processing liquid level stored in the processing tank. A dry gas supply means for supplying a dry gas, and a first gas which is disposed on a dry gas supply side of the dry gas supply means among both ends of the bottom of the processing tank and supplies a processing liquid to the center of the bottom of the processing tank. The first jet pipe capable of switching between the first direction and the second direction in which the processing liquid is supplied to the upper side of the processing tank, and the first jet pipe are disposed on the opposite side of the bottom of the processing tank. , Supplying a treatment liquid toward the center of the bottom of the treatment tank Decane, supporting the substrate, and a support means which is vertically movable structure over the processing position and the processing tank upper falls drying position inside the processing bath, in a state of being positioned in the processing position the support means, said first The processing liquid is supplied from the ejection pipe in the first direction, the processing liquid is supplied from the second ejection pipe and the substrate is processed, and then the dry gas is supplied from the dry gas supply means. wherein when raising the support means to stop the supply of process liquid from the second jet pipe, wherein by supplying the processing liquid from the first jet pipe in the second direction, on said treatment tank and it is characterized in that it comprises a control means for the orientation of the liquid surface near the overflows from the edge processing solution flows Ru match the direction of flow of the drying gas, the.

［作用・効果］請求項２に記載の発明によれば、制御手段は、支持手段を処理位置に位置させた状態で、第１の噴出管から第１の方向へ処理液を供給させるとともに、第２の噴出管から処理液を供給させて基板に処理を行わせた後、処理槽の上縁から溢れる処理液の液面近傍に設けられた乾燥気体供給手段の噴射口から乾燥気体を供給させつつ支持手段を上昇させる際には、第２の噴出管からの処理液の供給を停止させるとともに、第１の噴出管から第２の方向へ処理液を供給させる。したがって、基板の処理中は、第１の噴出管から第１の方向へ供給された処理液及び第２の噴出管から供給された処理液が底部中央から液面付近に向かって上昇しつつ処理槽の両側に向かって流れが分かれ、処理槽の両上縁から排出される。基板を引き上げ乾燥させる際には、第１の噴出管の第２の方向のみから処理液を供給させるので、供給された処理液は、処理槽の側壁に沿って上昇し、液面付近を乾燥気体の排出側へ向かって流れた後に処理槽の上縁から溢れて排出される。したがって、乾燥気体の供給方向と、処理槽の上縁から溢れる処理液の液面付近における処理液の流れとが一致するので、処理液の流れに澱みが生じにくく、処理液中のパーティクルが効率的に排出される。その結果、引き上げられる基板にパーティクルが付着するのを防止することができ、清浄度高く処理することができる。また、液面の中央部が盛り上がることがなく、乾燥気体により液面中央に波立ちが生じるのを防止することができるので、引き上げ中の基板に飛沫が付着することを防止でき、乾燥不良を防止することができる。 [Operation / Effect] According to the invention described in claim 2, the control means supplies the treatment liquid in the first direction from the first ejection pipe in a state where the support means is located at the treatment position. After the processing liquid is supplied from the second ejection pipe and the substrate is processed, the dry gas is supplied from the injection port of the dry gas supply means provided near the liquid level of the processing liquid overflowing from the upper edge of the processing tank. When raising the support means, the supply of the processing liquid from the second ejection pipe is stopped and the processing liquid is supplied from the first ejection pipe in the second direction. Therefore, during the processing of the substrate, the processing liquid supplied from the first ejection pipe in the first direction and the processing liquid supplied from the second ejection pipe are processed while rising from the center of the bottom toward the liquid surface. The flow is divided toward both sides of the tank and discharged from both upper edges of the processing tank. When the substrate is pulled up and dried, the processing liquid is supplied only from the second direction of the first ejection pipe, so that the supplied processing liquid rises along the side wall of the processing tank and dries near the liquid surface. After flowing toward the gas discharge side, it overflows from the upper edge of the treatment tank and is discharged. Therefore, the supply direction of the dry gas and the flow of the treatment liquid in the vicinity of the liquid surface of the treatment liquid overflowing from the upper edge of the treatment tank coincide with each other. Are exhausted. As a result, it is possible to prevent particles from adhering to the substrate to be pulled up, and it is possible to process with high cleanliness. In addition, the central part of the liquid level does not swell, and it is possible to prevent the dry gas from causing undulations in the center of the liquid level, thus preventing droplets from adhering to the substrate being pulled up and preventing poor drying. can do.

また、本発明は、前記第１の噴出管は、縦断面円形状の筒部材と、筒部材の内部空間を二分する仕切り部材と、仕切り部材で仕切られた一方の内部空間に連通し、前記第１の方向へ処理液を供給する第１の噴出口と、仕切り部材で仕切られた他方の内部空間に連通し、前記第２の方向へ処理液を供給する第２の噴出口と、を備えていることが好ましい（請求項３）。筒部材を仕切り部材で仕切って第１の噴出口と第２の噴出口とを形成し、第１の噴出管への処理液の供給先を切り換えるだけで処理液の供給方向を切り換えることができる。したがって、余分なスペースを必要とせず、省スペース化を図ることができる。 In the present invention, the first ejection pipe communicates with a cylindrical member having a circular longitudinal cross section, a partition member that bisects the internal space of the cylindrical member, and one internal space partitioned by the partition member, A first jet port for supplying the processing liquid in the first direction, and a second jet port for communicating with the other internal space partitioned by the partition member and for supplying the processing liquid in the second direction, It is preferable to provide (Claim 3). The cylinder member is partitioned by a partition member to form a first jet port and a second jet port, and the supply direction of the processing liquid can be switched by simply switching the supply destination of the processing liquid to the first jet pipe. . Therefore, no extra space is required and space saving can be achieved.

また、本発明は、前記第１の噴出管は、第１の方向へ処理液を供給する第１の筒部材と、第２の方向へ処理液を供給する第２の筒部材と、を備えて別体で構成されていることが好ましい（請求項４）。別体の第１の筒部材と第２の筒部材とで第１の噴出管を構成しているので、両筒部材の構造を簡易化できる。 Further, according to the present invention, the first ejection pipe includes a first cylindrical member that supplies the processing liquid in the first direction, and a second cylindrical member that supplies the processing liquid in the second direction. It is preferable that they are configured separately (claim 4). Since the 1st jet pipe is comprised by the separate 1st cylinder member and 2nd cylinder member, the structure of both cylinder members can be simplified.

また、請求項５に記載の発明は、処理液で基板を処理した後、基板を処理液から引き上げつつ乾燥気体で乾燥処理を行う基板処理装置において、処理液を貯留する処理槽と、前記処理槽の上部であって、前記処理槽の上縁から溢れる処理液の液面近傍に設けられた噴射口を有し、前記処理槽内に貯留する処理液面に沿って一方側から他方側へ乾燥気体を供給する乾燥気体供給手段と、前記処理槽の底部両端側に配設され、前記処理槽の底部中央に向けて処理液を供給する一対の噴出管と、前記処理槽の上部両側壁うち、前記乾燥気体供給手段の供給側に配設され、前記処理槽の液面付近にて前記乾燥気体供給手段の排出側に向けて処理液を供給する上部噴出管と、基板を支持し、前記処理槽内部の処理位置と処理槽上方にあたる乾燥位置にわたって昇降自在に構成された支持手段と、前記支持手段を処理位置に位置させた状態で、前記一対の噴出管から処理液を供給させて基板に処理を行わせた後、前記乾燥気体供給手段から乾燥気体を供給させつつ前記支持手段を上昇させる際には、前記一対の噴出管からの処理液の供給を停止させるとともに、前記上部噴出管から処理液を供給させ、前記処理槽の上縁から溢れる処理液の液面近傍の流れの方向を前記乾燥気体の流れの方向と一致させる制御手段と、を備えていることを特徴とするものである。 Further, the invention according to claim 5 is a substrate processing apparatus that performs a drying process with a dry gas while pulling up the substrate from the processing liquid after processing the substrate with the processing liquid, and a processing tank for storing the processing liquid; An injection port provided in the vicinity of the liquid level of the processing liquid overflowing from the upper edge of the processing tank, from one side to the other side along the processing liquid level stored in the processing tank. A dry gas supply means for supplying a dry gas, a pair of jet pipes disposed on both ends of the bottom of the processing tank and supplying a processing liquid toward the center of the bottom of the processing tank, and both upper side walls of the processing tank Among them, disposed on the supply side of the dry gas supply means, supporting an upper jet pipe for supplying a treatment liquid toward the discharge side of the dry gas supply means in the vicinity of the liquid surface of the treatment tank, and a substrate, The processing position inside the processing tank and the drying position above the processing tank The support means configured to be movable up and down, and the substrate is processed by supplying the processing liquid from the pair of ejection pipes in a state where the support means is positioned at the processing position, and then supplying the dry gas When raising the support means while supplying dry gas from the means, the supply of the processing liquid from the pair of ejection pipes is stopped and the processing liquid is supplied from the upper ejection pipes , and it is characterized in that it comprises a control means for the orientation of the liquid surface near the overflows from the edge processing solution flows Ru match the direction of flow of the drying gas, the.

［作用・効果］請求項５に記載の発明によれば、制御手段は、支持手段を処理位置に位置させた状態で、一対の噴出管から処理液を供給させて基板に処理を行わせた後、処理槽の上縁から溢れる処理液の液面近傍に設けられた乾燥気体供給手段の噴射口から乾燥気体を供給させつつ支持手段を上昇させる際には、一対の噴出管からの処理液の供給を停止させるとともに、上部噴出管から処理液を供給させる。したがって、基板の処理中には、一対の噴出管から供給された処理液が底部中央から液面付近に向かって上昇しつつ処理槽の両側に向かって流れが分かれ、処理槽の両上縁から排出される。基板を引き上げ乾燥させる際には、一対の噴出管からの処理液の供給を停止させるとともに、上部噴出管のみから処理液を供給させるので、供給された処理液は、液面付近を乾燥気体の排出側へ向かって流れた後に処理槽の上縁から溢れて排出される。したがって、乾燥気体の供給方向と、処理槽の上縁から溢れる処理液の液面付近における処理液の流れとが一致するので、処理液の流れに澱みが生じにくく、処理液中のパーティクルが効率的に排出される。その結果、引き上げられる基板にパーティクルが付着するのを防止することができ、清浄度高く処理することができる。また、液面の中央部が盛り上がることがなく、乾燥気体により液面中央に波立ちが生じるのを防止することができるので、引き上げ中の基板に飛沫が付着することを防止でき、乾燥不良を防止することができる。 [Operation / Effect] According to the invention described in claim 5, the control means causes the substrate to perform processing by supplying the processing liquid from the pair of ejection pipes with the support means positioned at the processing position. Thereafter, when raising the support means while supplying the dry gas from the spray port of the dry gas supply means provided near the liquid level of the treatment liquid overflowing from the upper edge of the treatment tank, the treatment liquid from the pair of ejection pipes Is stopped, and the processing liquid is supplied from the upper ejection pipe. Therefore, during the processing of the substrate, the processing liquid supplied from the pair of ejection pipes rises from the center of the bottom toward the liquid surface and flows toward both sides of the processing tank, and from both upper edges of the processing tank. Discharged. When the substrate is pulled up and dried, the supply of the processing liquid from the pair of ejection pipes is stopped and the processing liquid is supplied only from the upper ejection pipe, so that the supplied processing liquid has a dry gas around the liquid surface. After flowing toward the discharge side, it overflows from the upper edge of the treatment tank and is discharged. Therefore, the supply direction of the dry gas and the flow of the treatment liquid in the vicinity of the liquid surface of the treatment liquid overflowing from the upper edge of the treatment tank coincide with each other. Are exhausted. As a result, it is possible to prevent particles from adhering to the substrate to be pulled up, and it is possible to process with high cleanliness. In addition, the central part of the liquid level does not swell, and it is possible to prevent the dry gas from causing undulations in the center of the liquid level, thus preventing droplets from adhering to the substrate being pulled up and preventing poor drying. can do.

また、本発明は、前記制御手段は、前記一対の噴出管からの処理液の供給を停止させることに代えて、前記一対の噴出管のうち、前記乾燥気体供給手段の供給側に位置する噴出管からの処理液の供給だけを停止させることが好ましい（請求項６）。一対の噴出管のうち、乾燥気体供給手段の供給側に位置する噴出管からの処理液の供給だけを停止させても、乾燥気体の供給方向と液面付近における処理液の流れとが一致する。処理槽内部の流れを止めないので、基板の引き上げ時であっても処理槽内部のパーティクルの排出を継続させることができる。 Further, according to the present invention, instead of stopping the supply of the processing liquid from the pair of ejection pipes, the control means is an ejection located on the supply side of the dry gas supply means among the pair of ejection pipes. It is preferable to stop only the supply of the processing liquid from the pipe (claim 6). Even if only the supply of the processing liquid from the jet pipe located on the supply side of the dry gas supply means is stopped among the pair of jet pipes, the supply direction of the dry gas matches the flow of the processing liquid in the vicinity of the liquid surface. . Since the flow inside the processing tank is not stopped, the discharge of particles inside the processing tank can be continued even when the substrate is pulled up.

また、本発明は、前記処理槽の上部両側壁のうち、前記乾燥気体供給手段の供給側に、上縁から処理槽の中央部側に向かって延出された整流版をさらに備えていることが好ましい（請求項７）。乾燥気体の流速が速い供給側に整流版を設けているので、液面が波立つのを防止して液面から処理液の飛沫が飛散するのを防止できる。 Moreover, this invention is further equipped with the rectification | straightening plate extended toward the center part side of the processing tank from the upper edge in the supply side of the said dry gas supply means among the upper both side walls of the said processing tank. (Claim 7). Since the flow velocity of the drying gas are provided rectifying plate on the supply side has fast, can be prevented from scattering droplets of treatment liquid from the liquid surface to prevent the rippling liquid surface.

本発明に係る基板処理装置によれば、基板の処理中には、一対の噴出管から供給された処理液が底部中央から液面付近に向かって上昇しつつ処理槽の両側に向かって流れが分かれ、処理槽の両上縁から排出される。基板を引き上げ乾燥させる際には、一対の噴出管のうち乾燥気体の排出側に位置する一方の噴出管のみから処理液を供給させるので、供給された処理液は、処理槽の底部に沿って他方の噴出管側へ向かった後、処理槽の側壁に沿って上昇し、液面付近を乾燥気体の排出側へ向かって流れた後に処理槽の上縁から溢れて排出される。したがって、乾燥気体の供給方向と、処理槽の上縁から溢れる処理液の液面付近における処理液の流れとが一致するので、処理液の流れに澱みが生じにくく、処理液中のパーティクルが効率的に排出される。その結果、引き上げられる基板にパーティクルが付着するのを防止することができ、清浄度高く処理することができる。また、液面の中央部が盛り上がることがなく、乾燥気体により液面中央に波立ちが生じるのを防止することができるので、引き上げ中の基板に飛沫が付着することを防止でき、乾燥不良を防止することができる。 According to the substrate processing apparatus of the present invention, during the processing of the substrate, the processing liquid supplied from the pair of ejection pipes rises from the center of the bottom toward the liquid surface and flows toward both sides of the processing tank. Divided and discharged from both upper edges of the treatment tank. When the substrate is pulled up and dried, the processing liquid is supplied from only one of the pair of jet pipes located on the dry gas discharge side, so that the supplied processing liquid is along the bottom of the processing tank. After going to the other ejection pipe side, it rises along the side wall of the processing tank, and after flowing near the liquid surface toward the discharge side of the dry gas, it overflows from the upper edge of the processing tank and is discharged. Therefore, the supply direction of the dry gas and the flow of the treatment liquid in the vicinity of the liquid surface of the treatment liquid overflowing from the upper edge of the treatment tank coincide with each other. Are exhausted. As a result, it is possible to prevent particles from adhering to the substrate to be pulled up, and it is possible to process with high cleanliness. In addition, the central part of the liquid level does not swell, and it is possible to prevent the dry gas from causing undulations in the center of the liquid level, thus preventing droplets from adhering to the substrate being pulled up and preventing poor drying. can do.

以下、図面を参照して本発明の実施例１を説明する。
図１は、実施例１に係る基板処理装置の概略構成を示すブロック図である。 Embodiment 1 of the present invention will be described below with reference to the drawings.
FIG. 1 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the first embodiment.

本実施例１に係る基板処理装置は、処理液を貯留する処理槽１を備えている。この処理槽１は、処理液を貯留し、起立姿勢とされた複数枚の基板Ｗを収容可能に構成されている。処理槽１の底部には、複数枚の基板Ｗが整列されている方向（紙面方向）に沿って長軸を有し、処理液を処理槽１内に供給するための一対の噴出管７が配設されている。右側の噴出管７には、供給管８の一端側が接続され、供給管８の他端側は、図示しない処理液供給源に連通接続されている。左側の噴出管７には、供給管９の一端側が接続され、供給管９の他端側は、図示しない処理液供給源に連通接続されている。供給管８，９は、フッ化水素酸や、硫酸・過酸化水素水の混合液などの薬液や、純水などを処理液として供給する。供給管８，９には、それぞれ流量制御弁１０，１１が取り付けられており、これらによって一対の噴出管７から処理槽１に供給される処理液の流量が調整される。 The substrate processing apparatus according to the first embodiment includes a processing tank 1 that stores a processing liquid. The processing tank 1 is configured to store a processing liquid and accommodate a plurality of substrates W in an upright posture. At the bottom of the processing tank 1, there is a pair of ejection pipes 7 having a long axis along a direction (paper surface direction) in which a plurality of substrates W are aligned and for supplying a processing liquid into the processing tank 1. It is arranged. One end side of the supply pipe 8 is connected to the right ejection pipe 7, and the other end side of the supply pipe 8 is connected to a processing liquid supply source (not shown). One end side of a supply pipe 9 is connected to the left ejection pipe 7, and the other end side of the supply pipe 9 is connected to a processing liquid supply source (not shown). The supply pipes 8 and 9 supply chemical liquid such as hydrofluoric acid, a mixed liquid of sulfuric acid and hydrogen peroxide water, or pure water as a processing liquid. Flow control valves 10 and 11 are attached to the supply pipes 8 and 9, respectively, and the flow rate of the processing liquid supplied from the pair of ejection pipes 7 to the processing tank 1 is adjusted by these.

処理槽１は、その周囲がチャンバ１２で囲われている。チャンバ１２は、上部に開閉自在の上部カバー１３を備えている。起立姿勢で複数枚の基板Ｗを支持するリフタ１５は、チャンバ１２の上方にあたる「待機位置」と、処理槽１の内部にあたる「処理位置」と、処理槽１の上方であってチャンバ１２の内部にあたる「乾燥位置」とにわたって移動可能に構成されている。リフタ１５は、複数枚の基板Ｗを当接支持する支持部材１６を下部に備えている。 The processing tank 1 is surrounded by a chamber 12. The chamber 12 includes an upper cover 13 that can be freely opened and closed. The lifter 15 that supports the plurality of substrates W in a standing posture includes a “standby position” that is above the chamber 12, a “processing position” that is inside the processing tank 1, and an interior of the chamber 12 that is above the processing tank 1. It is configured to be movable across the “drying position”. The lifter 15 includes a support member 16 at the lower part for abutting and supporting a plurality of substrates W.

なお、上述したリフタ１５が本発明における支持手段に相当する。 The lifter 15 described above corresponds to the support means in the present invention.

処理槽１の底部には、排出口１７が形成されている。この排出口１７には、ＱＤＲ弁１９が取り付けられている。この排出口１７から処理槽１内の処理液を排出すると、処理液がチャンバ１２内の底部に一旦排出される。チャンバ１２の底部には排液弁２１が取り付けられており、排液弁２１が開放されると、チャンバ１２内に排出された処理液が外部に排出される。また、噴出管７から供給されて処理槽１を溢れ、チャンバ１２内に排出された処理液も同様にして排液弁２１を介して外部に排出される。 A discharge port 17 is formed at the bottom of the processing tank 1. A QDR valve 19 is attached to the discharge port 17. When the processing liquid in the processing tank 1 is discharged from the discharge port 17, the processing liquid is once discharged to the bottom of the chamber 12. A drain valve 21 is attached to the bottom of the chamber 12, and when the drain valve 21 is opened, the processing liquid discharged into the chamber 12 is discharged to the outside. Further, the processing liquid supplied from the ejection pipe 7 and overflowing the processing tank 1 and discharged into the chamber 12 is also discharged outside through the drain valve 21 in the same manner.

チャンバ１２のうち、処理槽１の上縁側方には、リフタ１５に支持された複数枚の基板Ｗの側方から乾燥気体であるドライエアを供給するための供給部２３が配設されている。また、処理槽１を挟んで供給部２３と対向する位置には、ドライエアを排出するための排出部２５が配設されている。供給部２３は、処理槽１に貯留している処理液の液面近傍に開口するように、ドライエアを噴出する噴射口２７を備え、排出部２５は、ドライエアをチャンバ１２外へ排出するための排出口２９を処理槽１側に備えている。 A supply unit 23 for supplying dry air, which is a dry gas, from the side of the plurality of substrates W supported by the lifter 15 is disposed on the side of the upper edge of the processing tank 1 in the chamber 12. A discharge unit 25 for discharging dry air is disposed at a position facing the supply unit 23 with the processing tank 1 interposed therebetween. The supply unit 23 includes an injection port 27 that ejects dry air so as to open near the liquid level of the processing liquid stored in the processing tank 1, and the discharge unit 25 discharges the dry air to the outside of the chamber 12. A discharge port 29 is provided on the processing tank 1 side.

上述した供給部２３には、一端側がドライエア供給装置３１に連通接続された供給配管３３の他端側が連通接続されている。ドライエア供給装置３１は、エアを取り込んで除湿し、所定湿度に調整したドライエアを供給配管３３へ供給する。 The supply unit 23 is connected to the other end of a supply pipe 33 whose one end is connected to the dry air supply device 31. The dry air supply device 31 takes in the air and dehumidifies it, and supplies the dry air adjusted to a predetermined humidity to the supply pipe 33.

なお、上述した供給部２３が本発明における乾燥気体供給手段に相当する。 In addition, the supply part 23 mentioned above corresponds to the dry gas supply means in this invention.

上述したリフタ１５の昇降動作や、ＱＤＲ弁１９及び排液弁２１の開閉、流量制御弁１０，１１などは、本発明における制御手段に相当する制御部４７によって統括的に制御される。特に、流量制御弁１０，１１については、以下に説明するように、特徴的な操作が行われる。 The lifting / lowering operation of the lifter 15, the opening / closing of the QDR valve 19 and the drain valve 21, the flow rate control valves 10 and 11, etc. are comprehensively controlled by the control unit 47 corresponding to the control means in the present invention. In particular, the flow control valves 10 and 11 are characteristically operated as described below.

次に、上述した構成の基板処理装置の動作について、図２及び図３を参照する。なお、図２は、洗浄処理時を示す模式図であり、図３は、乾燥処理時を示す模式図である。以下の説明においては、リフタ１５が既に処理位置に移動されているものとする。 Next, operations of the substrate processing apparatus having the above-described configuration will be described with reference to FIGS. FIG. 2 is a schematic diagram showing the time of the cleaning process, and FIG. 3 is a schematic diagram showing the time of the drying process. In the following description, it is assumed that the lifter 15 has already been moved to the processing position.

＜洗浄処理時＞
制御部４７は、流量制御弁１０，１１を同じ流量に設定して開放し、一対の噴出管７から同じ流量で処理液として純水を処理総１内へ供給させる。すると、純水は、処理槽１の底部両端部から供給され、底部中央にて上方へ向かい、液面付近で左右に分かれて処理槽１から溢れ出る（図２）。この状態を所定時間だけ維持させることにより、基板Ｗに対して純水による洗浄処理が行われる。 <During washing process>
The control unit 47 sets the flow rate control valves 10 and 11 to the same flow rate, opens them, and supplies pure water as treatment liquid from the pair of ejection pipes 7 at the same flow rate into the processing total 1. Then, pure water is supplied from both ends of the bottom of the processing tank 1, and moves upward at the center of the bottom, overflows from the processing tank 1 in the vicinity of the liquid level and separates right and left (FIG. 2). By maintaining this state for a predetermined time, the substrate W is cleaned with pure water.

＜乾燥処理時＞
制御部４７は、流量制御弁１１の流量をゼロに設定する。これにより、左側の噴出管７からは純水の供給が停止され、右側の噴出管７のみから純水が供給される。したがって、純水は、処理槽１の底部右側から底部に沿って左側の噴出管７側へ向かった後、処理槽１の側壁に沿って上昇し、液面付近を排出部２５側へ向かって流れた後に処理槽１の上縁から溢れて排出される（図３）。この状態で、制御部４７は、供給部２３の噴射口２７からドライエアを供給させるとともに、リフタ１５を乾燥位置に向けて上昇させる。すると、純水の液面から順次に露出する基板Ｗにドライエアが供給され、基板Ｗに対する乾燥処理が行われる。 <Drying process>
The controller 47 sets the flow rate of the flow control valve 11 to zero. Thereby, the supply of pure water is stopped from the left jet pipe 7 and pure water is supplied only from the right jet pipe 7. Therefore, after deionized water goes from the bottom right side of the processing tank 1 to the left ejection pipe 7 side along the bottom, it rises along the side wall of the processing tank 1, and the vicinity of the liquid level toward the discharge unit 25 side. After flowing, it overflows from the upper edge of the processing tank 1 and is discharged (FIG. 3). In this state, the control unit 47 supplies dry air from the injection port 27 of the supply unit 23 and raises the lifter 15 toward the drying position. Then, dry air is supplied to the substrate W exposed sequentially from the liquid surface of the pure water, and a drying process is performed on the substrate W.

上記のようにして基板Ｗの乾燥処理が行われるが、ドライエアの供給方向と液面付近における純水の流れとが一致するので、純水の流れに澱みが生じにくく、洗浄時に基板Ｗから剥離されて純水中に漂うパーティクルや処理槽１内の純水中に元々存在するパーティクルが効率的に排出される。その結果、引き上げられる基板Ｗにパーティクルが付着するのを防止することができ、基板Ｗを清浄度高く処理することができる。また、液面の中央部が盛り上がることがなく、ドライエアにより液面中央に波立ちが生じるのを防止することができるので、引き上げ中の基板Ｗに飛沫が付着することを防止でき、基板Ｗの乾燥不良を防止することができる。 The substrate W is dried as described above. However, since the supply direction of the dry air and the flow of pure water in the vicinity of the liquid surface coincide with each other, the flow of pure water hardly causes stagnation and is peeled off from the substrate W during cleaning. Thus, the particles drifting in the pure water and the particles originally existing in the pure water in the treatment tank 1 are efficiently discharged. As a result, it is possible to prevent particles from adhering to the substrate W to be pulled up, and the substrate W can be processed with high cleanliness. In addition, since the central portion of the liquid surface does not rise and it is possible to prevent the air surface from being rippled by dry air, it is possible to prevent the droplets from adhering to the substrate W being pulled up and to dry the substrate W. Defects can be prevented.

次に、図面を参照して本発明の実施例２を説明する。
図４は、実施例２に係る基板処理装置の概略構成を示すブロック図であり、図５は、第２の噴出管の縦断面図である。なお、上述した実施例１と同様の構成については、同符号を付すことで詳細な説明については省略する。 Next, Embodiment 2 of the present invention will be described with reference to the drawings.
FIG. 4 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the second embodiment, and FIG. 5 is a longitudinal sectional view of a second ejection pipe. In addition, about the structure similar to Example 1 mentioned above, detailed description is abbreviate | omitted by attaching | subjecting a same sign.

本実施例２に係る基板処理装置は、処理槽１の底部左側に第１の噴出管５１を備え、処理槽１の底部右側に第２の噴出管５３を備えている。第２の噴出管５３には、図示しない処理液供給源に一端側が連通接続された供給管５５の他端側が連通接続されている。供給管５５には、流量を調整する流量制御弁５７が取り付けられている。 The substrate processing apparatus according to the second embodiment includes a first jet pipe 51 on the left side of the bottom of the processing tank 1 and a second jet pipe 53 on the right side of the bottom of the processing tank 1. The second ejection pipe 53 is connected to the other end side of a supply pipe 55 whose one end side is connected to a processing liquid supply source (not shown). A flow rate control valve 57 for adjusting the flow rate is attached to the supply pipe 55.

第１の噴出管５１は、図５に示すように、縦断面が円形状を呈する筒部材５９と、この筒部材５９の内部空間を二分する仕切り部材６１と、筒部材５９に形成され、内部空間の一方に連通し、処理槽１の底部中央に向かう第１の方向へ処理液を供給可能な第１の噴出口６３と、筒部材５９に形成され、内部空間の他方に連通し、処理槽１の側壁に沿う上方へ向かう第２の方向へ処理液を供給可能な第２の噴出口６５と、第１の噴出口６３に連通した第１供給口６７と、第２の噴出口６５に連通した第２供給口６９とを備えている。 As shown in FIG. 5, the first ejection pipe 51 is formed in a cylindrical member 59 having a circular longitudinal section, a partition member 61 that bisects the internal space of the cylindrical member 59, and the cylindrical member 59. A first jet port 63 capable of supplying a treatment liquid in a first direction toward the center of the bottom of the treatment tank 1 communicated with one of the spaces and a cylindrical member 59, communicated with the other of the internal space, and treated. A second jet port 65 capable of supplying the processing liquid in a second direction extending upward along the side wall of the tank 1, a first supply port 67 communicating with the first jet port 63, and a second jet port 65. And a second supply port 69 in communication therewith.

第１供給口６７と第２供給口６９には、一端側が図示しない処理液供給源に連通接続された供給管７１の他端側が三方弁７３を介して連通接続されている。つまり、第１供給口６７と第２供給口６９は、三方弁７３の操作により、いずれか一方のみから処理液が供給される。供給管７１には、流量を調整する流量制御弁７５が取り付けられている。 The other end side of the supply pipe 71 whose one end side is connected to a treatment liquid supply source (not shown) is connected to the first supply port 67 and the second supply port 69 via a three-way valve 73. That is, the processing liquid is supplied from only one of the first supply port 67 and the second supply port 69 by the operation of the three-way valve 73. A flow rate control valve 75 for adjusting the flow rate is attached to the supply pipe 71.

本実施例２における制御部４７は、リフタ１５などの制御の他、三方弁７３の切り換えも制御する。 The control unit 47 in the second embodiment controls the switching of the three-way valve 73 in addition to the control of the lifter 15 and the like.

次に、上述した構成の基板処理装置の動作について、図６及び図７を参照する。なお、図６は、洗浄処理時を示す模式図であり、図７は、乾燥処理時を示す模式図である。 Next, operations of the substrate processing apparatus having the above-described configuration will be described with reference to FIGS. 6 is a schematic diagram showing the time of the cleaning process, and FIG. 7 is a schematic diagram showing the time of the drying process.

＜洗浄処理時＞
制御部４７は、三方弁７３を第１供給口６７側に切り換えるとともに、流量制御弁５７，７５を同じ流量に設定して開放し、第１の噴出管５１と第２の噴射管５３とから同じ流量で処理液として純水を処理槽１内へ供給させる。第１の噴射管５１からは、第１の方向へ純水が供給される。すると、純水は、処理槽１の底部両端部から供給され、底部中央にて上方へ向かい、液面付近で左右に分かれて処理槽１から溢れ出る（図６）。この状態を所定時間だけ維持させることにより、基板Ｗに対して純水による洗浄処理が行われる。 <During washing process>
The control unit 47 switches the three-way valve 73 to the first supply port 67 side, sets the flow rate control valves 57 and 75 to the same flow rate, and opens them, so that the first jet pipe 51 and the second jet pipe 53 Pure water is supplied into the treatment tank 1 as a treatment liquid at the same flow rate. Pure water is supplied from the first injection pipe 51 in the first direction. Then, pure water is supplied from both ends of the bottom of the processing tank 1, moves upward at the center of the bottom, divides into right and left near the liquid surface, and overflows from the processing tank 1 (FIG. 6). By maintaining this state for a predetermined time, the substrate W is cleaned with pure water.

＜乾燥処理時＞
制御部４７は、流量制御弁５７の流量をゼロに設定する。これにより、第２の噴出管５３からは純水の供給が停止される。さらに、流量制御弁７５を開いた状態で三方弁７３を第２供給口６９側に切り換える。これにより、第１の噴出管５１からは、純水が第２の方向だけに供給される。したがって、純水は、処理槽１の側壁に沿って上昇し、液面付近をドライエアの排出側へ向かって流れた後に処理槽１の上縁から溢れて排出される（図７）。この状態で、制御部４７は、噴射口２７からドライエアを供給させるとともに、リフタ１５を乾燥位置に向けて上昇させる。すると、純水の液面から順次に露出する基板Ｗにドライエアが供給され、基板Ｗに対する乾燥処理が行われる。 <Drying process>
The controller 47 sets the flow rate of the flow rate control valve 57 to zero. As a result, the supply of pure water from the second ejection pipe 53 is stopped. Further, the three-way valve 73 is switched to the second supply port 69 side with the flow rate control valve 75 opened. As a result, pure water is supplied from the first ejection pipe 51 only in the second direction. Therefore, the pure water rises along the side wall of the processing tank 1, flows over the liquid surface toward the discharge side of the dry air, and then overflows and is discharged from the upper edge of the processing tank 1 (FIG. 7). In this state, the control unit 47 supplies dry air from the injection port 27 and raises the lifter 15 toward the drying position. Then, dry air is supplied to the substrate W exposed sequentially from the liquid surface of the pure water, and a drying process is performed on the substrate W.

上述した本実施例２に係る基板処理装置であっても、上述した実施例１に係る基板処理装置と同等の効果を奏する。また、筒部材５９を仕切り部材６１で仕切って第１の噴出口６３と第２の噴出口６５とを形成し、第１の噴出管５１への処理液の供給先を切り換えるだけで処理液の供給方向を切り換えることができる。したがって、処理槽１に余分なスペースを必要とせず、省スペース化を図ることができる。 Even the substrate processing apparatus according to the second embodiment described above has the same effects as the substrate processing apparatus according to the first embodiment described above. Further, the cylindrical member 59 is partitioned by the partition member 61 to form the first jet outlet 63 and the second jet outlet 65, and the processing liquid supply only to the first jet pipe 51 by switching the supply destination. The supply direction can be switched. Therefore, an extra space is not required in the processing tank 1, and space saving can be achieved.

なお、上述した実施例２に係る基板処理装置は、図８に示すように構成してもよい。図８は、実施例２に係る基板処理装置の変形例を示すブロック図である。 In addition, you may comprise the substrate processing apparatus which concerns on Example 2 mentioned above as shown in FIG. FIG. 8 is a block diagram illustrating a modification of the substrate processing apparatus according to the second embodiment.

すなわち、第１の噴出管５１が、第１の方向へ処理液を供給する第１の筒部材７７と、第２の方向へ処理液を供給する第２の筒部材７９との別体で構成されている点において上記実施例２とは構成が相違する。このような構成であっても、三方弁７３を上述したタイミングで切り換えることにより、同様の効果を奏する。また、同じ構成の二つの筒部材で第１の噴出管５１を構成するので、実施例２の第１の噴射管５１に比較して構造を簡易化できる。 That is, the first ejection pipe 51 is configured as a separate body of a first cylindrical member 77 that supplies the processing liquid in the first direction and a second cylindrical member 79 that supplies the processing liquid in the second direction. In that respect, the configuration is different from that of the second embodiment. Even if it is such a structure, there exists the same effect by switching the three-way valve 73 at the timing mentioned above. Moreover, since the 1st ejection pipe | tube 51 is comprised with the two cylindrical members of the same structure, compared with the 1st ejection pipe | tube 51 of Example 2, a structure can be simplified.

次に、図９〜図１１を参照して本発明の実施例３を説明する。
図９は、実施例３に係る基板処理装置の概略構成を示すブロック図であり、図１０は、洗浄処理時を示す模式図であり、図１１は、乾燥処理時を示す模式図である。なお、上述した実施例１と同等の構成については、同符号を付すことで詳細な説明については省略する。 Next, Embodiment 3 of the present invention will be described with reference to FIGS.
FIG. 9 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the third embodiment, FIG. 10 is a schematic diagram illustrating a cleaning process, and FIG. 11 is a schematic diagram illustrating a drying process. In addition, about the structure equivalent to Example 1 mentioned above, detailed description is abbreviate | omitted by attaching | subjecting the same code | symbol.

本実施例３に係る基板処理装置は、一対の噴出管７を備え、これらの噴出管７には供給管８から処理液が供給される。また、処理槽１の上部両側壁のうち、ドライエアの供給部２３側には、上部噴出管８１が配設されている。この上部噴出管８１には、図示しない処理液供給源に一端側が連通接続された供給管８３の他端側が連通接続されており、上部噴出管８１は、処理槽１の液面付近において排出部２５側に向けて処理液を供給する。供給管８３には、流量を調整する流量制御弁８５が取り付けられている。 The substrate processing apparatus according to the third embodiment includes a pair of ejection pipes 7, and a processing liquid is supplied to the ejection pipes 7 from a supply pipe 8. An upper ejection pipe 81 is disposed on the dry air supply unit 23 side of the upper side walls of the processing tank 1. The upper jet pipe 81 is connected to the other end of a supply pipe 83, one end of which is connected to a processing liquid supply source (not shown), and the upper jet pipe 81 is connected to a discharge portion in the vicinity of the liquid surface of the processing tank 1. The processing liquid is supplied toward the 25 side. A flow rate control valve 85 for adjusting the flow rate is attached to the supply pipe 83.

洗浄処理時（図１０）においては、流量制御弁８５の流量をゼロにして上部噴出管８１からの純水の供給を遮断させた状態で、一対の噴出管７から純水を供給させて基板Ｗに対して処理を行う。一方、乾燥処理時（図１１）においては、流量制御弁１０の流量をゼロにして純水の供給を停止させるとともに、流量制御弁８５の流量を所定値にして上部噴出管８１から純水を供給させる。 During the cleaning process (FIG. 10), the pure water is supplied from the pair of jet pipes 7 with the flow rate of the flow control valve 85 set to zero and the supply of pure water from the upper jet pipe 81 is shut off. Process W. On the other hand, during the drying process (FIG. 11), the flow rate of the flow rate control valve 10 is set to zero to stop the supply of pure water, and the flow rate of the flow rate control valve 85 is set to a predetermined value so that pure water is supplied from the upper jet pipe 81. Supply.

上述した本実施例３に係る基板処理装置であっても、上述した実施例１，２に係る基板処理装置と同等の効果を奏する。 Even the substrate processing apparatus according to the third embodiment described above has the same effects as the substrate processing apparatuses according to the first and second embodiments described above.

なお、上記の実施例３において、実施例１のように制御部４７が、一対の噴出管７のうち、供給部２３側に位置する左側の噴出管７からの純水の供給だけを停止させるようにしてもよい。このようにしても、上記同様の効果を奏するとともに、処理槽１の内部の流れを止めないので、基板Ｗの引き上げ時であっても処理槽１内部のパーティクルの排出を継続させることができる。 In the third embodiment, as in the first embodiment, the control unit 47 stops only the supply of pure water from the left jet pipe 7 located on the supply section 23 side of the pair of jet pipes 7. You may do it. Even if it does in this way, while there exists an effect similar to the above and the flow inside processing tank 1 is not stopped, discharge of particles inside processing tank 1 can be continued even when substrate W is pulled up.

本発明は、上記実施形態に限られることはなく、下記のように変形実施することができる。 The present invention is not limited to the above embodiment, and can be modified as follows.

（１）上述した各実施例１〜３では、処理槽１が単槽で構成されているが、内槽と、内槽から溢れた処理液を回収する外槽とを備えた複槽式の処理槽であってもよい。 (1) In each of the above-described Examples 1 to 3, the processing tank 1 is configured as a single tank, but a multi-tank type equipped with an inner tank and an outer tank for recovering the processing liquid overflowing from the inner tank. It may be a treatment tank.

（２）上述した各実施例１〜３では、供給部２３からドライエアを供給しているが、これに代えてドライ窒素や他の乾燥気体を供給する構成としてもよい。 (2) In each of the first to third embodiments described above, dry air is supplied from the supply unit 23. However, instead of this, dry nitrogen or other dry gas may be supplied.

（３）上述した各実施例１〜３において、図１２に示す変形例のように構成を追加してもよい。
すなわち、処理槽１の上部両側壁のうち、供給部２３側に、処理槽１の側壁上縁から排出部２５側に向かって延出され、リフタ１５及び支持されている基板Ｗに干渉しない長さの整流板８７をさらに備えるようにしてもよい。この整流板８７を設けることにより、供給部２３側の液面が波立つのを防止して、液面から純水の飛沫が飛散するのを防止することができる。 (3) In each of the first to third embodiments, a configuration may be added as in the modification shown in FIG.
That is, of the upper side walls of the processing tank 1, the length that does not interfere with the lifter 15 and the supported substrate W that extends from the upper edge of the side wall of the processing tank 1 toward the discharge section 25 toward the supply section 23. A rectifying plate 87 may be further provided. By providing the current plate 87, it is possible to prevent the liquid surface on the supply unit 23 side from undulating, and to prevent the splash of pure water from scattering from the liquid surface.

実施例１に係る基板処理装置の概略構成を示すブロック図である。1 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a first embodiment. 洗浄処理時を示す模式図である。It is a schematic diagram which shows the time of a washing process. 乾燥処理時を示す模式図である。It is a schematic diagram which shows the time of a drying process. 実施例２に係る基板処理装置の概略構成を示すブロック図である。FIG. 6 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a second embodiment. 第２の噴出管の縦断面図である。It is a longitudinal cross-sectional view of a 2nd ejection pipe. 洗浄処理時を示す模式図である。It is a schematic diagram which shows the time of a washing process. 乾燥処理時を示す模式図である。It is a schematic diagram which shows the time of a drying process. 実施例２の変形例に係る基板処理装置の概略構成を示すブロック図である。FIG. 10 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a modification of Example 2. 実施例３に係る基板処理装置の概略構成を示すブロック図である。FIG. 10 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a third embodiment. 洗浄処理時を示す模式図である。It is a schematic diagram which shows the time of a washing process. 乾燥処理時を示す模式図である。It is a schematic diagram which shows the time of a drying process. 変形例を示す概略構成図である。It is a schematic block diagram which shows a modification.

Explanation of symbols

Ｗ … 基板
１ … 処理槽
７ … 噴出管
８，９ … 供給管
１０，１１ … 流量制御弁
１２ … チャンバ
１５ … リフタ
２３ … 供給部
２５ … 排出部
３３ … 供給配管
４７ … 制御部 W ... Substrate 1 ... Processing tank 7 ... Jet pipe 8, 9 ... Supply pipe 10, 11 ... Flow control valve 12 ... Chamber 15 ... Lifter 23 ... Supply section 25 ... Discharge section 33 ... Supply pipe 47 ... Control section

Claims

In a substrate processing apparatus for performing a drying process with a dry gas while processing a substrate with a processing liquid and then pulling up the substrate from the processing liquid,
A treatment tank for storing the treatment liquid;
The upper part of the processing tank, having an injection port provided in the vicinity of the liquid level of the processing liquid overflowing from the upper edge of the processing tank, and from one side to the other along the processing liquid level stored in the processing tank Dry gas supply means for supplying dry gas to the side;
A pair of ejection pipes disposed on both ends of the bottom of the treatment tank and supplying a treatment liquid toward the center of the bottom of the treatment tank;
A support means configured to support the substrate and to be movable up and down over a processing position inside the processing tank and a drying position above the processing tank;
In a state where the support means is located at the processing position, after the processing liquid is supplied from the pair of ejection pipes and the substrate is processed, the support means is supplied while supplying the dry gas from the dry gas supply means. When raising, the processing liquid is supplied from only one of the pair of jet pipes located on the dry gas discharge side of the dry gas supply means and overflows from the upper edge of the processing tank. and a control means for the orientation of the liquid surface near the flow Ru match the direction of flow of the drying gas,
A substrate processing apparatus comprising:

In a substrate processing apparatus for performing a drying process with a dry gas while processing a substrate with a processing liquid and then pulling up the substrate from the processing liquid,
A treatment tank for storing the treatment liquid;
The upper part of the processing tank, having an injection port provided in the vicinity of the liquid level of the processing liquid overflowing from the upper edge of the processing tank, and from one side to the other along the processing liquid level stored in the processing tank Dry gas supply means for supplying dry gas to the side;
A first liquid is disposed on the dry gas supply side of the dry gas supply means among both ends of the bottom of the processing tank, and the processing liquid is supplied to the center of the bottom of the processing tank, and the processing liquid is disposed above the processing tank. A first jet pipe switchable between a second direction for supplying
The first ejection pipe is disposed on the opposite side of the bottom of the treatment tank, and a second ejection pipe that supplies a treatment liquid toward the center of the bottom of the treatment tank;
A support means configured to support the substrate and to be movable up and down over a processing position inside the processing tank and a drying position above the processing tank;
With the support means positioned at the processing position, the processing liquid is supplied from the first ejection pipe in the first direction, and the processing liquid is supplied from the second ejection pipe to perform processing on the substrate. Then, when raising the support means while supplying the dry gas from the dry gas supply means, the supply of the processing liquid from the second jet pipe is stopped and the first jet pipe is used. to supply the processing liquid to the second direction, and control means for the orientation of the liquid surface near the flow of the overflowing treating solution from the upper edge of the processing bath Ru match the direction of flow of the drying gas,
A substrate processing apparatus comprising:

The substrate processing apparatus according to claim 2,
The first ejection pipe communicates with a cylindrical member having a circular longitudinal section, a partition member that bisects the internal space of the cylindrical member, and one internal space partitioned by the partition member, and is processed in the first direction. A first jet port for supplying the liquid, a second jet port for communicating with the other internal space partitioned by the partition member and supplying the processing liquid in the second direction,
A substrate processing apparatus comprising:

The substrate processing apparatus according to claim 2,
The first ejection pipe includes a first cylindrical member that supplies the processing liquid in the first direction and a second cylindrical member that supplies the processing liquid in the second direction, and is configured separately. A substrate processing apparatus.

In a substrate processing apparatus for performing a drying process with a dry gas while processing a substrate with a processing liquid and then pulling up the substrate from the processing liquid,
A treatment tank for storing the treatment liquid;
The upper part of the processing tank, having an injection port provided in the vicinity of the liquid level of the processing liquid overflowing from the upper edge of the processing tank, and from one side to the other along the processing liquid level stored in the processing tank Dry gas supply means for supplying dry gas to the side;
A pair of ejection pipes disposed on both ends of the bottom of the treatment tank and supplying a treatment liquid toward the center of the bottom of the treatment tank;
Of the upper both side walls of the processing tank, an upper jet pipe that is disposed on the supply side of the dry gas supply means and supplies the processing liquid toward the discharge side of the dry gas supply means in the vicinity of the liquid surface of the processing tank When,
A support means configured to support the substrate and to be movable up and down over a processing position inside the processing tank and a drying position above the processing tank;
In a state where the support means is located at the processing position, after the processing liquid is supplied from the pair of ejection pipes and the substrate is processed, the support means is supplied while supplying the dry gas from the dry gas supply means. When raising, the supply of the processing liquid from the pair of ejection pipes is stopped, the processing liquid is supplied from the upper ejection pipe, and the flow near the liquid surface of the processing liquid overflowing from the upper edge of the processing tank control means for Ru direction to match the direction of flow of the drying gas,
A substrate processing apparatus comprising:

The apparatus according to claim 5,
The control means, instead of stopping the supply of the processing liquid from the pair of ejection pipes, of the processing liquid from the ejection pipe located on the supply side of the dry gas supply means among the pair of ejection pipes. A substrate processing apparatus, wherein only the supply is stopped.

In the substrate processing apparatus according to any one of claims 1 to 6,
The substrate further comprising a rectifying plate extending from an upper edge toward a central portion side of the processing tank on a supply side of the dry gas supply means among both upper side walls of the processing tank. Processing equipment.