CN101263209B - 无研磨剂的抛光系统 - Google Patents

无研磨剂的抛光系统 Download PDF

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Publication number
CN101263209B
CN101263209B CN200680033516XA CN200680033516A CN101263209B CN 101263209 B CN101263209 B CN 101263209B CN 200680033516X A CN200680033516X A CN 200680033516XA CN 200680033516 A CN200680033516 A CN 200680033516A CN 101263209 B CN101263209 B CN 101263209B
Authority
CN
China
Prior art keywords
polishing system
polishing
substrate
potassium
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200680033516XA
Other languages
English (en)
Chinese (zh)
Other versions
CN101263209A (zh
Inventor
艾萨克·谢里安
凯文·莫金博格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN101263209A publication Critical patent/CN101263209A/zh
Application granted granted Critical
Publication of CN101263209B publication Critical patent/CN101263209B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200680033516XA 2005-08-17 2006-08-09 无研磨剂的抛光系统 Expired - Fee Related CN101263209B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/205,428 US20070039926A1 (en) 2005-08-17 2005-08-17 Abrasive-free polishing system
US11/205,428 2005-08-17
PCT/US2006/030982 WO2007021716A2 (en) 2005-08-17 2006-08-09 Abrasive-free polishing system

Publications (2)

Publication Number Publication Date
CN101263209A CN101263209A (zh) 2008-09-10
CN101263209B true CN101263209B (zh) 2011-07-13

Family

ID=37499371

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200680033516XA Expired - Fee Related CN101263209B (zh) 2005-08-17 2006-08-09 无研磨剂的抛光系统

Country Status (11)

Country Link
US (1) US20070039926A1 (https=)
EP (1) EP1924666B1 (https=)
JP (1) JP5144516B2 (https=)
KR (1) KR101109334B1 (https=)
CN (1) CN101263209B (https=)
AT (1) ATE528364T1 (https=)
IL (1) IL189504A (https=)
MY (1) MY146300A (https=)
SG (1) SG178632A1 (https=)
TW (1) TWI343296B (https=)
WO (1) WO2007021716A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070117497A1 (en) * 2005-11-22 2007-05-24 Cabot Microelectronics Corporation Friction reducing aid for CMP
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
CN103493183B (zh) * 2011-04-26 2016-06-08 旭硝子株式会社 非氧化物单晶基板的研磨方法
DE112012004193T5 (de) 2011-10-07 2014-07-03 Asahi Glass Co., Ltd. Siliziumcarbid-Einkristallsubstrat und Polierlösung
JP7125386B2 (ja) * 2017-03-23 2022-08-24 株式会社フジミインコーポレーテッド 研磨用組成物
EP4022002A4 (en) * 2019-08-30 2023-08-23 Saint-Gobain Ceramics and Plastics, Inc. FLUID COMPOSITION AND METHOD OF PERFORMING A MATERIAL REMOVAL PROCESS
CN114341286B (zh) 2019-08-30 2023-10-20 圣戈本陶瓷及塑料股份有限公司 用于进行材料去除操作的组合物和方法
TWI873902B (zh) * 2022-10-11 2025-02-21 美商Ｃｍｃ材料有限責任公司 用於高度摻雜硼之矽膜之化學機械拋光組合物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885334A (en) * 1996-05-15 1999-03-23 Kabushiki Kaisha Kobe Seiko Sho Polishing fluid composition and polishing method
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing
WO2002063669A2 (en) * 2000-10-27 2002-08-15 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
CN1524918A (zh) * 2003-02-25 2004-09-01 �����ɷ� 化学机械抛光浆液

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277355A (en) * 1979-09-28 1981-07-07 Alexander Farcnik Insulative fireproof textured coating
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JPH09306881A (ja) * 1996-05-15 1997-11-28 Kobe Steel Ltd シリコン用研磨液組成物および研磨方法
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6429133B1 (en) * 1999-08-31 2002-08-06 Micron Technology, Inc. Composition compatible with aluminum planarization and methods therefore
JP2001144042A (ja) * 1999-11-11 2001-05-25 Hitachi Chem Co Ltd 金属研磨方法
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US20030189186A1 (en) * 2002-03-29 2003-10-09 Everlight Usa, Inc. Chemical-mechanical polishing composition for metal layers
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP2004276219A (ja) * 2003-03-18 2004-10-07 Ebara Corp 電解加工液、電解加工装置及び配線加工方法
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885334A (en) * 1996-05-15 1999-03-23 Kabushiki Kaisha Kobe Seiko Sho Polishing fluid composition and polishing method
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing
WO2002063669A2 (en) * 2000-10-27 2002-08-15 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
CN1524918A (zh) * 2003-02-25 2004-09-01 �����ɷ� 化学机械抛光浆液

Also Published As

Publication number Publication date
IL189504A0 (en) 2008-08-07
MY146300A (en) 2012-07-31
CN101263209A (zh) 2008-09-10
EP1924666B1 (en) 2011-10-12
TWI343296B (en) 2011-06-11
SG178632A1 (en) 2012-03-29
TW200730298A (en) 2007-08-16
WO2007021716A2 (en) 2007-02-22
WO2007021716A3 (en) 2007-06-07
IL189504A (en) 2012-12-31
KR101109334B1 (ko) 2012-01-31
ATE528364T1 (de) 2011-10-15
US20070039926A1 (en) 2007-02-22
JP5144516B2 (ja) 2013-02-13
JP2009505423A (ja) 2009-02-05
KR20080035699A (ko) 2008-04-23
EP1924666A2 (en) 2008-05-28

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110713

Termination date: 20160809