IL189504A - Abrasive-free polishing method - Google Patents
Abrasive-free polishing methodInfo
- Publication number
- IL189504A IL189504A IL189504A IL18950408A IL189504A IL 189504 A IL189504 A IL 189504A IL 189504 A IL189504 A IL 189504A IL 18950408 A IL18950408 A IL 18950408A IL 189504 A IL189504 A IL 189504A
- Authority
- IL
- Israel
- Prior art keywords
- polishing
- water
- potassium
- substrate
- polishing system
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/205,428 US20070039926A1 (en) | 2005-08-17 | 2005-08-17 | Abrasive-free polishing system |
| PCT/US2006/030982 WO2007021716A2 (en) | 2005-08-17 | 2006-08-09 | Abrasive-free polishing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL189504A0 IL189504A0 (en) | 2008-08-07 |
| IL189504A true IL189504A (en) | 2012-12-31 |
Family
ID=37499371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL189504A IL189504A (en) | 2005-08-17 | 2008-02-13 | Abrasive-free polishing method |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20070039926A1 (https=) |
| EP (1) | EP1924666B1 (https=) |
| JP (1) | JP5144516B2 (https=) |
| KR (1) | KR101109334B1 (https=) |
| CN (1) | CN101263209B (https=) |
| AT (1) | ATE528364T1 (https=) |
| IL (1) | IL189504A (https=) |
| MY (1) | MY146300A (https=) |
| SG (1) | SG178632A1 (https=) |
| TW (1) | TWI343296B (https=) |
| WO (1) | WO2007021716A2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070117497A1 (en) * | 2005-11-22 | 2007-05-24 | Cabot Microelectronics Corporation | Friction reducing aid for CMP |
| CN101333419B (zh) * | 2008-08-05 | 2011-06-29 | 清华大学 | 一种集成电路铜布线的无磨粒化学机械抛光液 |
| CN103493183B (zh) * | 2011-04-26 | 2016-06-08 | 旭硝子株式会社 | 非氧化物单晶基板的研磨方法 |
| DE112012004193T5 (de) | 2011-10-07 | 2014-07-03 | Asahi Glass Co., Ltd. | Siliziumcarbid-Einkristallsubstrat und Polierlösung |
| JP7125386B2 (ja) * | 2017-03-23 | 2022-08-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| EP4022002A4 (en) * | 2019-08-30 | 2023-08-23 | Saint-Gobain Ceramics and Plastics, Inc. | FLUID COMPOSITION AND METHOD OF PERFORMING A MATERIAL REMOVAL PROCESS |
| CN114341286B (zh) | 2019-08-30 | 2023-10-20 | 圣戈本陶瓷及塑料股份有限公司 | 用于进行材料去除操作的组合物和方法 |
| TWI873902B (zh) * | 2022-10-11 | 2025-02-21 | 美商Cmc材料有限責任公司 | 用於高度摻雜硼之矽膜之化學機械拋光組合物 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4277355A (en) * | 1979-09-28 | 1981-07-07 | Alexander Farcnik | Insulative fireproof textured coating |
| US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| MY133700A (en) * | 1996-05-15 | 2007-11-30 | Kobe Steel Ltd | Polishing fluid composition and polishing method |
| JPH09306881A (ja) * | 1996-05-15 | 1997-11-28 | Kobe Steel Ltd | シリコン用研磨液組成物および研磨方法 |
| US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
| SG54606A1 (en) * | 1996-12-05 | 1998-11-16 | Fujimi Inc | Polishing composition |
| US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| US6429133B1 (en) * | 1999-08-31 | 2002-08-06 | Micron Technology, Inc. | Composition compatible with aluminum planarization and methods therefore |
| WO2001019935A1 (en) * | 1999-09-15 | 2001-03-22 | Rodel Holdings, Inc. | Slurry for forming insoluble silicate during chemical-mechanical polishing |
| JP2001144042A (ja) * | 1999-11-11 | 2001-05-25 | Hitachi Chem Co Ltd | 金属研磨方法 |
| US6551935B1 (en) * | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| US6602117B1 (en) * | 2000-08-30 | 2003-08-05 | Micron Technology, Inc. | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
| US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
| US6800218B2 (en) * | 2001-08-23 | 2004-10-05 | Advanced Technology Materials, Inc. | Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same |
| US20030189186A1 (en) * | 2002-03-29 | 2003-10-09 | Everlight Usa, Inc. | Chemical-mechanical polishing composition for metal layers |
| US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
| JP4152218B2 (ja) * | 2003-02-25 | 2008-09-17 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| JP2004276219A (ja) * | 2003-03-18 | 2004-10-07 | Ebara Corp | 電解加工液、電解加工装置及び配線加工方法 |
| US7485241B2 (en) * | 2003-09-11 | 2009-02-03 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
-
2005
- 2005-08-17 US US11/205,428 patent/US20070039926A1/en not_active Abandoned
-
2006
- 2006-08-09 EP EP06813337A patent/EP1924666B1/en not_active Not-in-force
- 2006-08-09 WO PCT/US2006/030982 patent/WO2007021716A2/en not_active Ceased
- 2006-08-09 JP JP2008526997A patent/JP5144516B2/ja not_active Expired - Fee Related
- 2006-08-09 SG SG2010059459A patent/SG178632A1/en unknown
- 2006-08-09 KR KR1020087006318A patent/KR101109334B1/ko not_active Expired - Fee Related
- 2006-08-09 CN CN200680033516XA patent/CN101263209B/zh not_active Expired - Fee Related
- 2006-08-09 AT AT06813337T patent/ATE528364T1/de not_active IP Right Cessation
- 2006-08-15 MY MYPI20063944A patent/MY146300A/en unknown
- 2006-08-17 TW TW095130290A patent/TWI343296B/zh not_active IP Right Cessation
-
2008
- 2008-02-13 IL IL189504A patent/IL189504A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL189504A0 (en) | 2008-08-07 |
| MY146300A (en) | 2012-07-31 |
| CN101263209A (zh) | 2008-09-10 |
| EP1924666B1 (en) | 2011-10-12 |
| TWI343296B (en) | 2011-06-11 |
| CN101263209B (zh) | 2011-07-13 |
| SG178632A1 (en) | 2012-03-29 |
| TW200730298A (en) | 2007-08-16 |
| WO2007021716A2 (en) | 2007-02-22 |
| WO2007021716A3 (en) | 2007-06-07 |
| KR101109334B1 (ko) | 2012-01-31 |
| ATE528364T1 (de) | 2011-10-15 |
| US20070039926A1 (en) | 2007-02-22 |
| JP5144516B2 (ja) | 2013-02-13 |
| JP2009505423A (ja) | 2009-02-05 |
| KR20080035699A (ko) | 2008-04-23 |
| EP1924666A2 (en) | 2008-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6392913B2 (ja) | 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法 | |
| CN101802125B (zh) | 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 | |
| IL189504A (en) | Abrasive-free polishing method | |
| TWI878613B (zh) | 用於碳基薄膜之選擇性拋光之以二氧化矽為主的漿料 | |
| JP5596344B2 (ja) | コロイダルシリカを利用した酸化ケイ素研磨方法 | |
| JP5576112B2 (ja) | ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 | |
| IL196220A (en) | Rate-enhanced cmp compositions for dielectric films | |
| CN101896571A (zh) | 用于金属移除速率控制的卤化物阴离子 | |
| IL196221A (en) | Gallium and chromium ions for oxide removal rate enhancement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| MM9K | Patent not in force due to non-payment of renewal fees |