CN101246862B - Wafer with radiating structure and its production method - Google Patents
Wafer with radiating structure and its production method Download PDFInfo
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- CN101246862B CN101246862B CN2008100878970A CN200810087897A CN101246862B CN 101246862 B CN101246862 B CN 101246862B CN 2008100878970 A CN2008100878970 A CN 2008100878970A CN 200810087897 A CN200810087897 A CN 200810087897A CN 101246862 B CN101246862 B CN 101246862B
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- heat sink
- back side
- metal heat
- radiator structure
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Abstract
The invention discloses a wafer having a radiating structure, consisting of a wafer and multiple metal radiating parts. The wafer is provided with an active surface and a back surface opposite to the active surface, wherein the back surface is provided with multiple dead holes. The multiple metal radiating parts are embedded into the head holes, and the metal radiating parts protrude from the back surface of the wafer.
Description
Technical field
The invention relates to a kind of wafer and preparation method thereof, and particularly in wafer, have wafer of radiator structure and preparation method thereof relevant for a kind of metal heat sink is partially submerged into radiator structure.
Background technology
In recent years, along with integrated circuit (Integrated Circuit, IC) integrated level of the internal wiring of chip (integration) is constantly soaring, the heat energy that chip produced also constantly increases.With regard to personal computer, the integrated circuit (IC) chip of high integration (for example IC chip such as central processing unit or drawing chip) is the main source that produces big calorimetric during operating, and heat can cause system temperature too high.In order to make above-mentioned IC chip can keep normal operation, the IC chip must maintain under the preferable working temperature, and temperature is too high to be caused usefulness temporarily to crash or damage to avoid.In other words, along with the arithmetic speed of IC chip constantly increases, also improve relatively for the requirement of cooling system.Therefore, the practice at present commonly used is directly radiator (Heat Sink) to be attached at brilliant back, and the heat energy that is produced when by radiator chip being operated is taken away.
Fig. 1 illustrates and is known a kind of generalized section of utilizing the chip that radiator dispels the heat.Traditional practice is earlier a wafer to be cut into one one crystal grain (die) 100 as shown in fig. 1, afterwards, and again in the back side of each crystal grain 100 100b coating last layer thermal grease 110.At last, again metal heat sink 120 is attached at brilliant back, the heat energy of being accumulated on the crystal grain 100 is taken away with radiator 120 by this.
Yet aforesaid way is the structure that belongs to die level, after the user needs earlier wafer to be cut into one one crystal grain, radiator could be attached at the brilliant back of each crystal grain respectively.So, not only can increase the complexity that radiator is assembled in brilliant back, and also can prolong the time of the required cost of assembling radiator.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of wafer with radiator structure and preparation method thereof, and this production method is directly to form a plurality of metal heat sink in the back side of wafer.Afterwards, carry out the cutting of wafer again, to form a crystal grain with metal heat sink.So, can solve in the known techniques earlier wafer is cut into crystal grain after, carry out the assembling of radiator again, the problem that the assembling complexity that is suffered from increases and built-up time prolongs.
The present invention proposes a kind of wafer with radiator structure, and it comprises a wafer and a plurality of metal heat sink.Wafer has an active surface and a back side relative with this active surface.Wherein, the back side of wafer has a plurality of blind holes.A plurality of metal heat sink are embedded in respectively in the above-mentioned blind hole, and these metal heat sink protrude from the back side of wafer.
In one embodiment of this invention, metal heat sink is radiating fin or thermal column.
In one embodiment of this invention, metal heat sink is formed by copper.
In one embodiment of this invention, the active surface of wafer further comprises a ground mat, and wherein a metal heat sink is connected in this ground mat.
In one embodiment of this invention, the wafer with radiator structure further comprises a radiator, is attached on these metal heat sink.
In one embodiment of this invention, the wafer with radiator structure further comprises a thermal grease, is disposed between radiator and these metal heat sink.
The present invention proposes a kind of manufacture method with wafer of radiator structure in addition, and it comprises the following steps.At first, provide a wafer, this wafer has an active surface and a back side relative with it.Afterwards, form a plurality of blind holes in the back side of wafer.Next, in these blind holes, fill a metal material, in each blind hole, to form a metal heat sink.At last, the back side of etching wafer is so that these metal heat sink are protruded the back side of wafer.
In one embodiment of this invention, forming the step of a plurality of blind holes in the back side of wafer, is to be used in the method etching or the mode of wet etching forms a plurality of blind holes in the back side of wafer.
In one embodiment of this invention, filling the step of metal material in these blind holes, is to utilize the mode of electroplating to form metal material in these blind holes.
In one embodiment of this invention, the step at the back side of etching wafer is to utilize a back side of revolving etching technics (spin etching process) etching wafer.
In one embodiment of this invention, this manufacture method with wafer of radiator structure further comprises provides a radiator, and this radiator is attached on these metal heat sink.
In one embodiment of this invention, the manufacture method with wafer of radiator structure further comprises by a wafer joint technology wafer with these metal heat sink is combined with another wafer.Further, the method further comprises wafer and another wafer that cutting has these metal heat sink, to form a plurality of chips with radiator structure.
The present invention proposes a kind of manufacture method with wafer of radiator structure in addition, and it comprises the following steps.At first, provide a wafer, this wafer has an active surface and a back side relative with it.Wherein, wafer has a ground mat, is disposed on the active surface.Next, form a plurality of blind holes, and wherein a blind hole exposes above-mentioned ground mat in the back side of wafer.Afterwards, in these blind holes, fill a metal material, in each blind hole, to form a metal heat sink.At last, the back side of etching wafer is so that these metal heat sink are protruded the back side of wafer.
In one embodiment of this invention, forming the step of these blind holes in the back side of wafer, is to utilize dry etching or the mode of wet etching forms these blind holes in the back side of wafer.
In one embodiment of this invention, filling the step of metal material in these blind holes, is to utilize the mode of electroplating to form metal material in blind hole.
In one embodiment of this invention, the step at the back side of etching wafer is to utilize a back side of revolving etching technics etching wafer.
In one embodiment of this invention, this manufacture method further comprises provides a radiator, and radiator is attached on these metal heat sink.
Manufacture method with wafer of radiator structure of the present invention is that the back side prior to wafer forms a plurality of blind holes, afterwards, in each blind hole, form a metal heat sink again, each metal heat sink is partially submerged in wafer, so, promptly form wafer with radiator structure.This wafer with radiator structure can directly cut, to form the crystal grain that a back embeds metal heat sink.So, can solve in the known techniques, after needing earlier wafer to be cut into crystal grain, carry out the encapsulation of radiator again, the assembling process that is caused comparatively bothers and time-consuming problem.And, therefore, can reach better radiating effect because these metal heat sink are directly to be embedded in the wafer.
In addition, the disclosed manufacture method with wafer of metal heat sink of the present invention also can be applicable on the blank wafer, to use as a wafer scale radiator.This wafer scale radiator can directly engage with other wafer, afterwards, carries out the wafer step of cutting again, to form the crystal grain that a back has radiator.So, also can quicken the flow process of crystal grain and radiator assembling.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, further be described in detail below.
Description of drawings
Fig. 1 illustrates and is known a kind of generalized section of utilizing the chip that radiator dispels the heat.
Fig. 2 A～2E illustrates and is a kind of making flow process generalized section with wafer of radiator structure according to one embodiment of the invention.
Fig. 3 illustrates the generalized section that combines with another wafer for the wafer with radiator structure shown in Fig. 2 D.
Fig. 4 A～4D illustrates a kind of making flow process generalized section with wafer of radiator structure for according to another embodiment of the present invention.
Fig. 5 A～5C illustrates the making flow process generalized section into a wafer scale radiator is combined with a wafer.
[main element symbol description]
100: crystal grain
100b: the back side
110: thermal grease
120: radiator
200,200 ': the wafer with radiator structure
200 ": the wafer scale radiator
210,210 ', 210 ": wafer
210a, 210a ': active surface
210b, 210b ', 210b ": the back side
212 ': ground mat
220: metal heat sink
300: radiator
400: thermal grease
500: wafer
500 ': crystal grain
H, H ': blind hole
Embodiment
Fig. 2 A～2E illustrates and is a kind of making flow process generalized section with wafer of radiator structure according to one embodiment of the invention.At first, please refer to Fig. 2 A, a wafer 210 is provided, this wafer 210 has an active surface 210a and a back side 210b relative with it.Afterwards, shown in Fig. 2 B, 210b forms a plurality of blind hole H in the back side of wafer 210.In this step, can utilize dry etching or wet etching mode to carry out etching, to form these blind holes H by the back side 210b of wafer 210.Because the shape of this blind hole H can have influence on the shape of the metal heat sink on the follow-up back side 210b that is formed at wafer 210, therefore, the user can be according to its user demand, and blind hole H is designed to the sheet or the blind hole of column, to form the metal heat sink of fin or column form.
Next, please refer to shown in Fig. 2 C, in the blind hole H of the back side of wafer 210 210b, fill a metal material, in each blind hole H, to form a metal heat sink 220.In one embodiment of this invention, can utilize plating or other suitable manner in blind hole H, to fill metal material.In addition, suitable metal material comprises that copper or other have the metal material of high thermal conduction characteristic.
At last, please refer to shown in Fig. 2 D, the back side 210b of etching wafer 210 is so that these metal heat sink 220 are protruded the back side 210b of wafer 210.In this step, can utilize the preferable etching technics that revolves of etching homogeneity that the back side 210b of wafer 210 is carried out etching, make the metal heat sink 220 that is made have preferable profile.And different, it can be the radiating fin or the form of column to the shape of these metal heat sink 220 according to the shape of blind hole H, and the present invention does not impose any restrictions for the shape of metal heat sink 220.So far, promptly finish the basic making flow process with wafer 200 of radiator structure of the present invention.After finishing above-mentioned making flow process, wafer 200 can be cut into one one crystal grain, make the back side of crystal grain promptly have metal heat sink 220.So, can solve in the known techniques, after needing earlier wafer to be cut into crystal grain, carry out the encapsulation of radiator again, the assembling process that is caused comparatively bothers and time-consuming problem.
Shown in Fig. 2 D, the wafer with radiator structure 200 that is made according to above-mentioned flow process mainly comprises a wafer 210 and a plurality of metal heat sink 220.Wafer 210 has an active surface 210a and a back side 210b relative with it.The back side 210b of this wafer 210 has a plurality of blind hole H.A plurality of metal heat sink 220 are embedded in respectively among the above-mentioned blind hole H, and these metal heat sink 220 protrude from the back side 210b of wafer 210.Wherein, these metal heat sink 220 can be radiating fin or thermal column, and the present invention does not impose any restrictions for the form of metal heat sink 220.
In addition, after finishing the step shown in Fig. 2 D, please refer to shown in Figure 3ly, a radiator 300 can additionally be provided, and radiator 300 is attached on these metal heat sink 220, further to promote the radiating effect of wafer 200.In addition, between metal heat sink 220 and radiator 300, optionally dispose a thermal grease (not shown), heat energy can more effectively be conducted on the radiator 300.
Fig. 4 A～4D illustrates a kind of making flow process generalized section with wafer of radiator structure for according to another embodiment of the present invention.At first, shown in Fig. 4 A, this wafer 210 ' roughly the same, and the two difference mainly is with the wafer 210 shown in Fig. 2 A: wafer 210 ' active surface 210a ' on further comprise a ground mat 212 '.Next, shown in Fig. 4 B, 210b forms a plurality of blind hole H in the back side of wafer 210.In this step, can utilize dry etching or wet etching mode by wafer 210 ' back side 210b ' carry out etching, to form these blind holes H.In addition, corresponding to the blind hole H ' of ground mat 212 ' locate be penetrate this wafer 210 ', with expose ground mat 212 '.
Afterwards, please refer to shown in Fig. 4 C, in the blind hole H of the back side of wafer 210 210b, fill a metal material, in these blind holes H and H ', to form a metal heat sink 220 respectively.At last, shown in Fig. 4 D, the back side 210b of etching wafer 210 is so that these metal heat sink 220 are protruded the back side 210b of wafer 210.Wherein, be formed at ground mat 212 ' on metal heat sink 220 be ground connection.So far, promptly finish wafer 200 with radiator structure ' the making flow process.Because the wafer with radiator structure 200 shown in Fig. 4 A～4D ' the making flow process identical with the technology shown in Fig. 2 A～2D haply, so, for no longer the giving unnecessary details of details of each step more.
In addition, the making flow process of the above-mentioned wafer with radiator structure also can be applicable on the common wafer forming on the active surface the wafer that element makes except that can be applicable to, and it is used as the radiator of a wafer scale merely.
Fig. 5 A～5C illustrates the making flow process generalized section into a wafer scale radiator is combined with a wafer.At first, please refer to shown in Fig. 5 A, the one wafer scale radiator 200 that is made according to the step shown in Fig. 2 A～2D is provided ", the metal heat sink 220 among this wafer scale radiator 200 " being by a wafer 210 " and a plurality of blind hole H that is embedded in wafer 210 " back side 210b " is constituted.Because wafer 210 " is a blank wafer, therefore, does not form any element on its surface.Next, please refer to shown in Fig. 5 B, utilize a wafer combined process (waferbonding) to make wafer scale radiator 200 and " combine with the wafer 500 that has element on another surface.In one embodiment of this invention, can be at wafer 500 and wafer scale radiator 200 " between configuration one thermal grease 400, to help the transmission of heat energy.At last, please refer to shown in Fig. 5 C, after finishing above-mentioned making flow process, wafer 200 can be cut into one one crystal grain 500 ', make crystal grain 500 ' the back side promptly have radiator.
Manufacture method with wafer of radiator structure of the present invention is that the back side prior to wafer forms a plurality of blind holes, afterwards, in each blind hole, form a metal heat sink again, each metal heat sink is partially submerged in wafer, so, promptly form wafer with radiator structure.This wafer with radiator structure can directly cut, to form the crystal grain that a back embeds metal heat sink.So, can solve in the known techniques, after needing earlier wafer to be cut into crystal grain, carry out the encapsulation of radiator again, the assembling process that is caused comparatively bothers and time-consuming problem.In addition, because these metal heat sink are directly to be embedded in the wafer, therefore, can reach better radiating effect.
Moreover the disclosed manufacture method with wafer of metal heat sink of the present invention also can be applicable on the blank wafer, to use as a wafer scale radiator.This wafer scale radiator can directly engage with other wafer, afterwards, carries out the wafer step of cutting again, to form the crystal grain that a back has radiator.So, also can quicken the flow process of crystal grain and radiator assembling.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the scope that claims define.
Claims (12)
1. the wafer with radiator structure is characterized in that, comprising:
Wafer, have active surface and with this active surface opposing backside surface, wherein the back side of this wafer has a plurality of blind holes; And
A plurality of metal heat sink are embedded in respectively in these a plurality of blind holes, and these a plurality of metal heat sink are in the back side of this wafer protrusion and continuous.
2. the wafer with radiator structure according to claim 1 is characterized in that, described metal heat sink is radiating fin or thermal column.
3. the wafer with radiator structure according to claim 1 is characterized in that described metal heat sink is to be formed by copper.
4. the wafer with radiator structure according to claim 1 is characterized in that described wafer further comprises thermal grease, is disposed between the radiator and described a plurality of metal heat sink that is attached on these a plurality of metal heat sink.
5. the manufacture method with wafer of radiator structure is characterized in that, this method comprises:
Wafer is provided, described wafer have active surface and with this active surface opposing backside surface;
Form a plurality of blind holes in the back side of described wafer;
In described a plurality of blind holes, fill metal material, in described a plurality of blind holes, to form a plurality of metal heat sink; And
The back side of the described wafer of etching is so that the back side that described a plurality of metal heat sink is protruded described wafer.
6. the manufacture method with wafer of radiator structure according to claim 5, it is characterized in that, forming the step of described a plurality of blind holes in the back side of described wafer, is to utilize the dry etching or the mode of wet etching to form described a plurality of blind hole in the back side of described wafer.
7. the manufacture method with wafer of radiator structure according to claim 5 is characterized in that, fills the step of this metal material in described a plurality of blind holes, is to utilize the mode of electroplating to form described metal material in described a plurality of blind holes.
8. the manufacture method with wafer of radiator structure according to claim 5 is characterized in that, the step at the back side of the described wafer of etching is to utilize the back side of revolving the described wafer of etching technics etching.
9. the manufacture method with wafer of radiator structure according to claim 5 is characterized in that this method further comprises provides radiator, and described radiator is attached on described a plurality of metal heat sink.
10. the manufacture method with wafer of radiator structure according to claim 5 is characterized in that, this method further comprises by the wafer joint technology makes the described wafer with described a plurality of metal heat sink combine with another wafer.
11. the manufacture method with wafer of radiator structure according to claim 10, it is characterized in that, this method comprises that further cutter has described wafer and described another wafer of described a plurality of metal heat sink, to form a plurality of chips with radiator structure.
12. the manufacture method with wafer of radiator structure is characterized in that, this method comprises:
Wafer is provided, described wafer have active surface and with this active surface opposing backside surface, wherein said wafer has ground mat, is disposed on the described active surface;
Form a plurality of blind holes in the back side of described wafer, and one of them blind hole exposes described ground mat;
In described a plurality of blind holes, fill metal material, in described a plurality of blind holes, to form a plurality of metal heat sink; And
The back side of the described wafer of etching is so that the back side that described a plurality of metal heat sink is protruded described wafer.
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| CN2008100878970A CN101246862B (en) | 2008-03-27 | 2008-03-27 | Wafer with radiating structure and its production method |
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| CN2008100878970A CN101246862B (en) | 2008-03-27 | 2008-03-27 | Wafer with radiating structure and its production method |
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| CN101246862A CN101246862A (en) | 2008-08-20 |
| CN101246862B true CN101246862B (en) | 2010-06-02 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011147099A1 (en) * | 2010-05-28 | 2011-12-01 | Huawei Technologies Co.,Ltd. | Arrangement with chip and carrier |
| CN105590906B (en) * | 2016-01-11 | 2019-02-01 | 江苏科技大学 | It is a kind of for being fanned out to the radiating component and manufacturing method of formula wafer level packaging |
| CN107195603A (en) * | 2017-06-30 | 2017-09-22 | 中国电子科技集团公司第五十八研究所 | A kind of preparation method of the encapsulating structure based on high heat conduction phase-change material phase-change heat technology |
| CN109560457A (en) * | 2018-09-30 | 2019-04-02 | 厦门市三安集成电路有限公司 | A kind of radiator structure and preparation method thereof of surface emitting laser device chip |
| CN111276455B (en) * | 2020-02-17 | 2021-11-30 | 北京华电能源互联网研究院有限公司 | Power module and preparation method thereof |
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| US6495454B2 (en) * | 1998-09-23 | 2002-12-17 | Intel Corporation | Substrate interconnect for power distribution on integrated circuits |
| US7112882B2 (en) * | 2004-08-25 | 2006-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structures and methods for heat dissipation of semiconductor integrated circuits |
| CN101000861A (en) * | 2006-01-11 | 2007-07-18 | 日月光半导体制造股份有限公司 | Manufacturing method of wafer stage cooling structure and chip packaging structure obtained by the method |
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2008
- 2008-03-27 CN CN2008100878970A patent/CN101246862B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495454B2 (en) * | 1998-09-23 | 2002-12-17 | Intel Corporation | Substrate interconnect for power distribution on integrated circuits |
| US7112882B2 (en) * | 2004-08-25 | 2006-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structures and methods for heat dissipation of semiconductor integrated circuits |
| CN101000861A (en) * | 2006-01-11 | 2007-07-18 | 日月光半导体制造股份有限公司 | Manufacturing method of wafer stage cooling structure and chip packaging structure obtained by the method |
Non-Patent Citations (2)
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