CN101237719A - A silicon capacitance microphone and its making method - Google Patents
A silicon capacitance microphone and its making method Download PDFInfo
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- CN101237719A CN101237719A CNA2007101256157A CN200710125615A CN101237719A CN 101237719 A CN101237719 A CN 101237719A CN A2007101256157 A CNA2007101256157 A CN A2007101256157A CN 200710125615 A CN200710125615 A CN 200710125615A CN 101237719 A CN101237719 A CN 101237719A
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Abstract
The invention discloses a silicon electret condenser microphone and a method for making the same. The silicon electret condenser microphone comprises a shell, an acoustic transducer chip, an IC device, other passive components and a substrate, wherein the shell and the substrate are fixed together and form a cavity, and the shell and/or the substrate is provided with sound inlets; the acoustic transducer chip, the IC device and other passive components are positioned in the cavity and are respectively fixed and electrically connected with the substrate; the substrate is provided with an output end bond pad; an acoustic cavity is formed between the acoustic transducer chip and the substrate, and the substrate has a first mounting surface and a second mounting surface, with the acoustic transducer chip and the IC device fixed on the first mounting surface, and the other passive components fixed on the second mounting surface. The silicon electret condenser microphone in the technical proposal of the invention has two mounting surfaces for mounting elements, with the other passive components arranged on the second mounting surface and, the acoustic transducer chip and the IC device arranged on the first mounting surface, thereby realizing full page printing and improving the production efficiency.
Description
Technical field
The present invention relates to the microphone production technical field, be specifically related to a kind of silicon capacitance microphone and preparation method thereof.
Background technology
At present, a brand-new technology and field have been opened up in the development of MEMS (micro electro mechanical system) (MEMS) technology.The microsensors, microactrator, micro parts, Micromechanical Optics device, vacuum microelectronic device, power electronic device etc. that adopt the MEMS fabrication techniques all have very wide application prospect in Aeronautics and Astronautics, automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people touched.
And silicon capacitance microphone is exactly a kind of MEMS transducer, is a research focus in the electroacoustic techniques field, also is the following direction that replaces traditional electret capacitor microphone.Existing silicon capacitance microphone is directly installed on other passive devices such as electric capacity, resistance and acoustic sensor chip, IC device on the upper surface of same substrate.Because the microstructure feature of acoustic sensor chip requires it to be fixed on the substrate with a circle glue.When other passive device and acoustic sensor chip, IC device are directly installed on the same substrate, owing to consider, must mount other passive device earlier from manufacturing process, just can mount acoustic sensor chip and IC device then.So the acoustic sensor chip can only be realized a single point sticker dress, and can not adopt whole plate typography to mount, this has limited the production efficiency of silicon capacitance microphone to a certain extent, and also not easy to operate in the production process.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of silicon capacitance microphone and preparation method thereof, improves the production efficiency of existing silicon capacitance microphone.
In order to solve the technical problem of above-mentioned silicon capacitance microphone, the present invention adopts following technical scheme:
A kind of silicon capacitance microphone comprises shell, acoustic sensor chip, IC device, other passive device and substrate; The fixing cavity that also forms betwixt of described shell and substrate; Described shell is or/and offer tone-entering hole on the substrate; Described acoustic sensor chip, IC device and other passive device are arranged in described cavity, and are electrically connected with fixing the reaching of substrate respectively; Described substrate is provided with and is used for the output pad that is connected with the client circuit board; Form acoustic cavity between described acoustic sensor chip and the substrate, described substrate has first installed surface and second installed surface, described acoustic sensor chip and IC device are fixed on described first installed surface, and described other passive device is fixed on described second installed surface.
Further, described substrate comprises upper substrate and infrabasal plate, and described upper substrate and infrabasal plate are electrically connected; Described first installed surface is the upper surface of upper substrate, and described second installed surface is the upper surface of infrabasal plate; Offer accommodation hole on the described upper substrate, described other passive device is arranged in described accommodation hole.
Further, offer tone-entering hole on described upper substrate and the infrabasal plate, and described tone-entering hole connects upper substrate and infrabasal plate and is communicated with acoustic cavity.Described tone-entering hole or/and extend infrabasal plate inside, improves acoustical behavior with volume and the lengthening entering tone passage of expanding acoustic cavity toward upper substrate.
Further, described substrate is made up of upper substrate and infrabasal plate, and described upper substrate and infrabasal plate are electrically connected; Described first installed surface is the upper surface of infrabasal plate, and described second installed surface is the upper surface of upper substrate; Offer accommodation hole on the upper substrate, described acoustic sensor chip and IC device are arranged in described accommodation hole.
Further, offer tone-entering hole on the described infrabasal plate, and described tone-entering hole connects infrabasal plate connection acoustic cavity.Described tone-entering hole extends toward infrabasal plate is inner, to expand the volume of acoustic cavity.
Further, described IC device is fixed by IC device adhesive glue and substrate, and is electrically connected with substrate by group's alignment; Described acoustic sensor chip is fixed by acoustic sensor chip attach glue and substrate, and is electrically connected with substrate and IC device by group's alignment.
Further, described output pad is positioned at the upper surface of upper substrate or the lower surface of infrabasal plate.
Further, described upper substrate and infrabasal plate fixing and electrical connection by therebetween a plurality of terminal pads.
Further, have at least one the tone-entering hole between upper substrate and the infrabasal plate surrounded and seal in the described terminal pad; Perhaps tone-entering hole between upper substrate and the infrabasal plate and accommodation hole are all surrounded and seal.
Further, described shell is by conductive adhesive or be welded on the upper surface of upper substrate or the upper surface of infrabasal plate.
Further, bonding or be welded with damping or dustcloth on the upper surface of described upper substrate lower surface or infrabasal plate, and described damping or dustcloth cover the tone-entering hole place.
Further, have in the described substrate by imbedding the embedding layer that technology forms, described embedding layer forms other passive device of silicon capacitance microphone, is second installed surface between embedding layer and the substrate,
And the upper surface of substrate is first installed surface, and described acoustic sensor chip and IC device promptly are fixed on the upper surface of substrate, and is electrically connected with the upper surface of substrate by binding line.
In order to solve the technical problem of above-mentioned silicon capacitance microphone manufacture method, the present invention adopts following technical scheme:
A kind of manufacture method of silicon capacitance microphone comprises the steps:
Whole plate and following whole plate in S1, the making: by the processing technology of printed circuit board (PCB), produce and comprise the whole plate of going up of some upper substrates, and corresponding with last whole plate, comprise the following whole plate of some infrabasal plates, each piece upper substrate is or/and all produced necessary wiring and pad on the infrabasal plate;
S2, mount components and parts: adopt whole plate typography, brush coating on last whole plate and following whole plate is loaded onto acoustic sensor chip, IC device and other passive device then respectively;
S3, dress paste shell: put in order plate or brush conducting resinl or tin cream on the whole plate down last, perhaps at the edge of shell brush conducting resinl or tin cream, then shell is bonded on whole plate or the following whole plate;
S4, merging: adopt whole plate typography, press specification brush coating or tin cream at the lower surface of last whole plate or the upper surface of following whole plate, to go up whole plate and down whole plate then and aim at and compress, and make conducting resinl or tin cream will go up through hot setting whole plate and down whole plate be adhesively fixed;
S5, cutting: the whole plate of going up that bonds together is cut with following whole plate, form single silicon capacitance microphone.
Further, mounting components and parts among the described step S2 specifically comprises: brush acoustic sensor die bonding glue and paste the acoustic sensor chip and put IC device bonded adhesives then and paste the IC device on last whole plate, and brushing conducting resinl or tin cream on the whole plate down, and mount other passive device.
A kind of manufacture method of silicon capacitance microphone comprises the steps:
B1, making substrate: adopt and imbed the integral basis plate that fabrication techniques comprises some substrates, all comprise the embedding layer that adopts other passive device of conduct of imbedding technology formation in each piece substrate, and the upper and lower surface of each piece substrate includes necessary wiring and pad;
B2, mount components and parts: adopt whole plate typography,, mount acoustic sensor chip and IC device then respectively at integral basis plate upper surface brush coating;
B3, mount shell: adopt whole plate typography,, mount shell then and be adhesively fixed by hot setting at the upper surface of integral basis plate or the edge brush conducting resinl or the tin cream of shell;
B4, cutting: the integral basis plate is cut, form single silicon capacitance microphone.
The beneficial effect that the silicon capacitance microphone of employing technical solution of the present invention is compared with the prior art is:
Owing to be provided with two installed surfaces that are used to install components and parts, other passive device be installed on the installed surface, and acoustic sensor chip and IC device are installed on another installed surface, thereby can realize whole plate printing, so improved production efficiency.
Since substrate is divided into upper substrate and infrabasal plate, simple in structure; Other passive device is installed on the upper surface of infrabasal plate, and on upper substrate, offers accommodation hole, under the prerequisite that guarantees the whole plate printing of realization, can control the thickness of microphone.
Be connected acoustic cavity owing on upper substrate and infrabasal plate, offer tone-entering hole, extraneous sound wave is well affacted on the acoustic sensor chip.Since with the tone-entering hole in upper substrate and the infrabasal plate to upper substrate or/and infrabasal plate is inner extends, expanded the volume of acoustic cavity, thereby can obtain different acoustic characteristics.
Owing to acoustic sensor chip and IC device are installed in the upper surface of infrabasal plate, and be positioned at the accommodation hole of offering on the upper substrate, and other passive device is installed in the upper surface of upper substrate, because the height of acoustic sensor chip and IC device is than other passive device height, can hold acoustic sensor chip and IC device by cavity 14, so this kind structure can further reduce the thickness of microphone.
Connect acoustic cavity owing on infrabasal plate, offer tone-entering hole, extraneous sound wave is well affacted on the acoustic sensor chip.And the tone-entering hole in the infrabasal plate has been expanded the volume of acoustic cavity, thereby can have been obtained different acoustic characteristics to the inner extension of infrabasal plate.
Because what the IC device adopted is nude film, it is fixed on upper substrate or the infrabasal plate by IC device bonded adhesives, is electrically connected with low cost, steady quality and take to help to decide technology and upper substrate or infrabasal plate by group's alignment.
Because the acoustic sensor chip is connected on upper substrate or the infrabasal plate by special acoustic sensor die bonding is gluing, be electrically connected and take to help to decide technology and upper substrate or infrabasal plate by group's alignment, with low cost, steady quality, acoustic characteristic is good.
Because the output pad can be arranged on the upper surface of upper substrate, also can be arranged on the lower surface of infrabasal plate, for the client circuit board provides selection; And the output pad offers the hole that holds silicon capacitance microphone if be arranged on the upper surface of upper substrate on the fit terminal circuit plate, can obtain very low setting height(from bottom), satisfies special requirement.
Fix and be electrically connected by a plurality of terminal pads between upper substrate and the infrabasal plate, compact conformation connects reliable.Terminal pad can be to form by reflow soldering process after tin cream is gone up in printing, also can be to be connected and fixed upper substrate and infrabasal plate by hot setting behind the brush conducting resinl.
Owing to be formed with a circle at least in the terminal pad, and the tone-entering hole between the upper and lower base plate surrounded and seals, make sound wave can not enter acoustic cavity by the slit between upper and lower base plate, help controlling the directive property of microphone.Perhaps be formed with a circle in the terminal pad at least, and tone-entering hole between the upper and lower base plate and accommodation hole are all surrounded and be closed, when helping controlling the directive property of microphone, also make dust etc. not enter into microphone inside by slit between the upper and lower base plate and accommodation hole.
Because shell is electrically connected by fixing the reaching of conducting resinl or tin cream and substrate, can be with the earthing of casing of metal material, and obtain good effectiveness.And, if shell is fixed on the infrabasal plate by conducting resinl or tin cream, can also reduce the integral thickness of microphone.
Owing to be provided with dustcloth or damping at the tone-entering hole place, the directive property that damping can be regulated microphone is set, dustcloth is set can intercepts dust.
Since with other passive device by the state-of-the-art technology of imbedding, be embedded among the substrate, make other passive device be not used in the acoustic sensor chip and the IC device is mounted on the surface, thereby can mount acoustic sensor chip and IC device, enhance productivity by whole plate printing technology.And the technology of imbedding can be so that the structure of microphone be simplified more, and thickness and volume are littler, is a main trend of microphone development.
Description of drawings
Fig. 1 is the structural representation of the specific embodiment of the invention one;
Fig. 2 is the schematic diagram of upper substrate upper surface in the specific embodiment of the invention one;
Fig. 3 is the schematic diagram of infrabasal plate upper surface in the specific embodiment of the invention one;
Fig. 4 is second schematic diagram of infrabasal plate upper surface in the specific embodiment of the invention one;
Fig. 5 is a schematic diagram of going up whole plate and following whole plate in the specific embodiment of the invention one;
Fig. 6 is first kind of structural representation expanding acoustic cavity in the specific embodiment of the invention one;
Fig. 7 is second kind of structural representation expanding acoustic cavity in the specific embodiment of the invention one;
Fig. 8 is the third structural representation of expanding acoustic cavity in the specific embodiment of the invention one;
Fig. 9 is the 4th a kind of structural representation expanding acoustic cavity in the specific embodiment of the invention one;
Figure 10 is the 5th a kind of structural representation expanding acoustic cavity in the specific embodiment of the invention one;
Figure 11 is the 6th a kind of structural representation expanding acoustic cavity in the specific embodiment of the invention one;
Figure 12 is the 7th a kind of structural representation expanding acoustic cavity in the specific embodiment of the invention one;
Figure 13 is the structural representation of the specific embodiment of the invention two;
Figure 14 is the structural representation of the specific embodiment of the invention three;
Figure 15 is the structural representation of the specific embodiment of the invention four;
Figure 16 is the structural representation of the specific embodiment of the invention five.
Embodiment
Embodiment one
The silicon capacitance microphone of this embodiment as shown in Figure 1, comprises shell 1 and board unit.Described board unit comprises substrate 17 and is mounted on acoustic sensor chip 8, IC device 7 and other passive device 6 on the substrate 17.The edge of shell 1 is fixing with substrate 17 by conducting resinl or tin cream 5, and forms cavity 14 between shell 1 and substrate 17.
The silicon capacitor microphone of this embodiment, its substrate 17 comprises upper substrate 2 and infrabasal plate 3.Upper substrate 2 and infrabasal plate 3 are by terminal pad 9 fixing and electrical connections.
Described acoustic sensor chip 8 is positioned at cavity 14, and is bonded in by acoustic sensor bonded adhesives 13 on the upper surface of upper substrate 2.Acoustic sensor chip 8 is taked to help to decide technology and is electrically connected with upper substrate 2 by group's alignment (group's alignment does not draw in the drawings).Form acoustic cavity 11 between described acoustic sensor chip 8 and the upper substrate 2, and offer tone-entering hole 15 on upper substrate 2 and the infrabasal plate 3, described tone-entering hole 15 connects acoustic cavities 11 with extraneous, makes extraneous sound wave to enter into acoustic cavity 11 between acoustic sensor chip 8 and the upper substrate 2 by this tone-entering hole 15.Described tone-entering hole 15 can be opened on upper substrate 2 and the infrabasal plate 3, also can be opened on the shell 1, perhaps offers simultaneously, to regulate directive property.Tone-entering hole 15 places of the lower surface of upper substrate 2 also are provided with damping or dustcloth 16, damping or dustcloth 16 are by mode bonding or welding, be fixed on the lower surface of upper substrate 2 or the upper surface of infrabasal plate, cover the aperture of tone-entering hole 15, to regulate the directive property or the dust protection of microphone.
Described IC device 7 is positioned at cavity 14, and is bonded on the upper surface of upper substrate 2 by IC device bonded adhesives 12.IC device 7 also by group's alignment, is taked to help to decide technology and is electrically connected with upper substrate 2.
Offer accommodation hole 4 on the described upper substrate 2, described other passive device 6 is arranged in this accommodation hole 4, and is fixed on the upper surface of infrabasal plate 3 by conducting resinl or tin cream 5, and is electrically connected by conducting resinl or tin cream 5 with infrabasal plate 3.
Also be provided with output pad 10 on the lower surface of described infrabasal plate 3, described output pad 10 is used for being connected with the client circuit board.
The upper surface of infrabasal plate 3 as shown in Figure 3, the connection pads 9 on it is a figure of eight of droping to the ground.Small square hole in the figure of eight left end square frame is a tone-entering hole 15.The right-hand member of infrabasal plate 3 upper surfaces is printed on conducting resinl or the tin cream 5 that is used for fixing and is electrically connected other passive device 6.This kind design can prevent in the acoustic cavity 11 of acoustic sensor and the voice signals in the cavity 14 are subjected to disturb from the signal of other direction.Simultaneously other passive device 6 peripheral part between upper substrate 2 and the infrabasal plate 3 are sealed, prevent that voice signal from entering cavity 14 in the slit of accommodation hole 4 and causing interference.
In fact, the terminal pad 9 between upper substrate 2 and the infrabasal plate 3 can also be as shown in Figure 4.Fig. 4 can regard as by Fig. 3 and change and come, i.e. the figure of eight among Fig. 3, the split square frame that is split into two separation.
The manufacture method of the silicon capacitance microphone of this embodiment is as follows:
By the processing technology of printed circuit board (PCB), make shown in Figure 5 going up and put in order plate 20 and following whole plate 21.The polylith upper substrate 2 of having gone up on the whole plate 20 regular array.Every upper substrate 2 all is independently circuit boards, and wiring is arranged on it, and the part that need be electrically connected with other element is exposed copper-clad plate.And down the regular array of whole plate 21 correspondences polylith infrabasal plate 3.Every infrabasal plate 3 all is independently circuit boards, and wiring is arranged on it, and the part that need be electrically connected with other element is exposed copper-clad plate, and lower surface also is provided with and is used for the output pad 10 that is connected with the client circuit board.It needs to be noted that tone-entering hole 15 among Fig. 2 and accommodation hole 4, and the tone-entering hole among Fig. 3 15 are also being taked printed circuit board technology, made in the lump in the process of whole plate 20 and following whole plate 21 in the making.
Second step, subsides acoustic sensor chip 8.
Adopt whole plate typography in Fig. 5 on the whole plate 20, brush acoustic sensor chip attach glue 13, mount acoustic sensor chip 8 then by each piece upper substrate 2 of giving shown in Figure 2.
The 3rd step, subsides IC device 7.
Adopt automatically dropping glue technology on the whole plate 20 in Fig. 5, go up IC device adhesive glue 12, mount IC device 7 then by 2 of each the piece upper substrates of giving shown in Figure 2.
The 4th step, subsides shell 1.
Adopt whole plate typography in Fig. 5 on the whole plate 20, brush conducting resinl or tin cream 5, mount shell 1 then by each piece upper substrate 2 of giving shown in Figure 2.Certainly also conducting resinl or tin cream 5 can be brushed on the edge of shell 1 bottom, then shell 1 is mounted on the upper substrate shown in Figure 22.
The 5th goes on foot, pastes other passive device 6.
In Fig. 5, adopt whole plate typography on the whole plate 21 down, brush conducting resinl or tin cream 5, mount other passive device 6 then by each piece infrabasal plate 3 of giving shown in Figure 3.Other passive device 6 comprises other all peripheral component of capacitance resistance herein, and all is electrically connected with infrabasal plate 3 by conducting resinl or tin cream 5.
The 6th goes on foot, is provided with damping or dustcloth 16.
Damping or dustcloth 16 are placed tone-entering hole 15 places on the upper substrate 2 by forms such as bonding or welding.
The 7th step, merging.To go up whole plate 20 is bonded together with following whole plate 21.
In Fig. 5, adopt whole plate typography on the whole plate 21 down, by brushing conducting resinl or tin cream 5 on the terminal pad of giving on each piece infrabasal plate 39 shown in Figure 3, bond together after will descending to put in order plate 21 then and last whole plate 20 being aimed at, and will go up whole plate 20 and descend whole plate 21 to be adhesively fixed by hot setting.A plurality of terminal pads 9 that each piece upper substrate 2 this moment infrabasal plate 3 corresponding with it passes through therebetween are electrically connected, and have promptly formed a plurality of silicon capacitance microphones that connect together.
The 8th step, cutting.
Form single silicon capacitance microphone from the whole plate 20 and down whole plate 21 cuttings that link together.
In addition, can expand the acoustic cavity among Fig. 1 11 as required.Under making, in the process of whole plate 21, can excavate out structure as shown in Figure 6 at tone-entering hole 15 places.This kind structure makes tone-entering hole 15 directly not aim at acoustic cavity 11, can also acoustic cavity 11 be expanded simultaneously so that dust is difficult for entering acoustic cavity 11, makes that the acoustic characteristic of acoustic cavity 11 is changed.
Can certainly offer into structure shown in Figure 7, this moment, acoustic cavity 11 did not communicate with the external world, and only was the volume that has increased acoustic cavity 11, and then had changed the acoustic characteristic of acoustic cavity 11.
Also can on the basis of Fig. 6, further expand the volume of acoustic cavity 11, excavate into structure shown in Figure 8, with the acoustic characteristic that need to obtain.
Can certainly on the basis of Fig. 7, excavate into structure shown in Figure 9,, obtain the acoustic characteristic that needs with the volume of further expansion acoustic cavity 11.
If the volume of acoustic cavity 11 is still too little, can not meet the demands, can on upper substrate 2 and infrabasal plate 3, excavate together, form structure shown in Figure 10, then can obtain bigger expanding space, obtain the acoustic characteristic that needs.
Certainly, excavate into structure shown in Figure 10 after, also can further get through, form structure shown in Figure 11.
Also can make tone-entering hole 15 and the 15 skew certain distances of the tone-entering hole on the upper substrate 2 on the infrabasal plate 3 as shown in figure 12, can make dust be difficult for entering in the acoustic cavity 11.
Embodiment two
The silicon capacitance microphone of this embodiment, its structure as shown in figure 13.Be that with the difference of embodiment one the output pad 10 that is used for being connected with the client circuit board is arranged on the upper surface of upper substrate, and be positioned at the periphery of shell 1.The benefit of this kind structure is that the position mode that can provide another to be connected with client, the main body of silicon capacitance microphone can be contained in the hole that excavates on the client circuit board, to satisfy client's needs.The relevant scheme of expanding acoustic cavity 11 also is suitable for present embodiment among the embodiment one.
The silicon capacitance microphone of this embodiment, its manufacture method and embodiment one are almost identical, unique little by little difference just is, adopt printed circuit board technology to make in the process of whole plate 20 and following whole plate 21 in the first step, output pad 10 is produced on the upper surface of whole plate 20.And be that output pad 10 is produced on down on the lower surface of whole plate 21 among the embodiment one.
Embodiment three
The silicon capacitance microphone of this embodiment, its structure as shown in figure 14.Be that with the difference of embodiment one acoustic sensor chip 8 and IC device 7 are bonded on the upper surface of infrabasal plate 3, and be arranged in the accommodation hole of being offered on the upper substrate 24.Acoustic sensor chip 8 and IC device 7 are electrically connected with infrabasal plate by group's alignment.Other passive device 6 is bonded on the upper substrate 2 by conducting resinl or tin cream 5, and is electrically connected with upper substrate 2.Because in general the height of acoustic sensor chip 8 and IC device 7 utilize cavity 14 can hold acoustic sensor chip 8 and IC device 7, and substrate thickness can suitably reduce greater than the height of other passive device 6.Therefore adopting the benefit of this kind structure is to reduce the whole height of silicon capacitance microphone.
The silicon capacitance microphone of this embodiment, its manufacture method is almost completely identical with the method for embodiment one, difference is that acoustic sensor chip 8 and IC device 7 are the upper surfaces that are bonded in infrabasal plate 3, and the acoustic sensor chip 8 of embodiment one and IC device 7 are the upper surfaces that are bonded in upper substrate 2.
Embodiment four
The silicon capacitance microphone of this embodiment, its structure as shown in figure 15.Present embodiment is further development and change and coming on the basis of embodiment three.Be that with the difference of embodiment three shell 1 is bonded in the upper surface of infrabasal plate 3 by conducting resinl or tin cream 5, and be electrically connected with infrabasal plate 3.The benefit of this kind structure is further to reduce the whole height of silicon capacitance microphone on the basis of embodiment three.
The silicon capacitance microphone of this embodiment, its manufacture method is almost completely identical with the method for embodiment three.Difference is that shell 1 is the upper surface that is bonded in infrabasal plate 3, so after on last whole plate 20, having mounted other passive device 6, need cut it, the upper substrate 2 that a piece is separated mounts down on the whole plate 21 then, just can mount shell 1 then, the down whole plate 21 of cutting at last forms the silicon capacitance microphone that separates.
Embodiment five
The silicon capacitance microphone of this embodiment, its structure as shown in figure 16.The maximum difference of present embodiment and four embodiment in front is that other passive device 6 has been imbedded baried type passive device 18 by imbedding technology in the process of making substrate 17 in monolith substrate 17.This kind method has adopted the up-to-date technology of imbedding, and the silicon capacitance microphone structure of being produced is very simple.Tone-entering hole 15 is opened on the shell 1 in the present embodiment, can certainly be opened on the monolith substrate 17.Output pad 10 is positioned at the upper surface of monolith substrate 17 in the present embodiment, can certainly be arranged on the lower surface of monolith substrate 17.
The silicon capacitance microphone of this embodiment, its manufacture method is all simpler than the several embodiment in front.At first form substrate 17, form embedding layer 18 in the substrate 17, and form necessary wiring and exposed copper-clad plate on the surface of substrate 17 as other passive device 6 by imbedding technology, and the output pad.Adopt whole plate typography printing IC device bonded adhesives 13 then, and mount IC device 7.Adopt whole plate typography printing acoustic sensor die bonding glue 12, and mount acoustic sensor chip 8.Brush at last and can cut the single silicon capacitance microphone of formation after conducting resinl or tin cream 5 mount shell 1.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (15)
1. a silicon capacitance microphone comprises shell (1), acoustic sensor chip (8), IC device (7), other passive device (6) and substrate (17); Described shell (1) and the fixing cavity (14) that also forms betwixt of substrate (17); Described shell (1) is or/and offer tone-entering hole (15) on the substrate (17); Described acoustic sensor chip (8), IC device (7) and other passive device (6) are arranged in described cavity (14), and are electrically connected with fixing the reaching of substrate (17) respectively; Described substrate (17) is provided with and is used for the output pad (10) that is connected with the client circuit board; Form acoustic cavity (11) between described acoustic sensor chip (8) and the substrate (17), it is characterized in that, described substrate (17) has first installed surface and second installed surface, described acoustic sensor chip (8) and IC device (7) are fixed on described first installed surface, and described other passive device (6) is fixed on described second installed surface.
2. silicon capacitance microphone according to claim 1 is characterized in that, described substrate (17) comprises upper substrate (2) and infrabasal plate (3), and described upper substrate (2) and infrabasal plate (3) are electrically connected; Described first installed surface is the upper surface of upper substrate (2), and described second installed surface is the upper surface of infrabasal plate (3); Offer accommodation hole (4) on the described upper substrate (2), described other passive device (6) is arranged in described accommodation hole (4).
3. silicon capacitance microphone according to claim 2 is characterized in that, the tone-entering hole of offering on described upper substrate (2) and the infrabasal plate (3) (15) connects upper substrate (2) and infrabasal plate (3) and is communicated with acoustic cavity (11); Described tone-entering hole (15) toward upper substrate (2) or/and infrabasal plate (3) is inner extends, to expand the volume of acoustic cavity (11).
4. silicon capacitance microphone according to claim 1 is characterized in that, described substrate is made up of upper substrate (2) and infrabasal plate (3), and described upper substrate (2) and infrabasal plate (3) are electrically connected; Described first installed surface is the upper surface of infrabasal plate (3), and described second installed surface is the upper surface of upper substrate (2); Offer accommodation hole (4) on the upper substrate (2), described acoustic sensor chip (8) and IC device (7) are arranged in described accommodation hole (4).
5. silicon capacitance microphone according to claim 4 is characterized in that, offers tone-entering hole (15) on the described infrabasal plate (3), and described tone-entering hole (15) connects infrabasal plate (3) connection acoustic cavity (11); Described tone-entering hole (15) extends toward infrabasal plate (3) is inner, to expand the volume of acoustic cavity (11).
6. according to any described silicon capacitance microphone in the claim 2 to 5, it is characterized in that described IC device (7) is fixing by IC device adhesive glue (12) and substrate (17), and be electrically connected with substrate (17) by group's alignment; Described acoustic sensor chip (8) is fixing by acoustic sensor chip attach glue (13) and substrate (17), and is electrically connected with substrate (17) and IC device (7) by group's alignment.
7. according to any described silicon capacitance microphone in the claim 2 to 5, it is characterized in that described output pad (10) is positioned at the upper surface of upper substrate (2) or the lower surface of infrabasal plate (3).
8. according to any described silicon capacitance microphone in the claim 2 to 5, it is characterized in that described upper substrate (2) and infrabasal plate (3) be fixing and electrical connection by therebetween a plurality of terminal pads (9).
9. silicon capacitance microphone according to claim 8 is characterized in that, has at least one the tone-entering hole (15) between upper substrate (2) and the infrabasal plate (3) surrounded and seal in the described terminal pad (9); Perhaps tone-entering hole (15) between upper substrate (2) and the infrabasal plate (3) and accommodation hole (4) are all surrounded and seal.
10. according to any described silicon capacitance microphone in the claim 2 to 5, it is characterized in that described shell (1) is bonded in the upper surface of upper substrate (2) or the upper surface of infrabasal plate (3) by conducting resinl (5).
11. according to any described silicon capacitance microphone in the claim 3 to 5, it is characterized in that, the tone-entering hole (15) of described upper substrate lower surface or infrabasal plate upper surface locates also to be provided with damping or dustcloth (16), and described damping or dustcloth (16) cover tone-entering hole (15).
12. silicon capacitance microphone according to claim 1, it is characterized in that, have in the described substrate (17) by imbedding the embedding layer (18) that technology forms, described embedding layer (18) comprises conductive layer and dielectric layer, described conductive layer and dielectric layer form other passive device (6) of silicon capacitance microphone, be second installed surface between embedding layer (18) and the substrate (17), and the upper surface of substrate (17) is first installed surface, described acoustic sensor chip (8) and IC device (7) promptly are fixed on the upper surface of substrate (17), and are electrically connected with the upper surface of substrate (17).
13. the manufacture method of a silicon capacitance microphone is characterized in that, comprises the steps:
Whole plate (20) and following whole plate (21) in S1, the making: by the processing technology of printed circuit board (PCB), produce and comprise the whole plate (20) of going up of some upper substrates (2), and it is corresponding with last whole plate (20), the following whole plate (21) that comprises some infrabasal plates (3), each piece upper substrate (2) is or/and all produced necessary wiring and pad on the infrabasal plate (3);
S2, mount components and parts: adopt whole plate typography,, load onto acoustic sensor chip (8), IC device (7) and other passive device (6) then respectively at the last brush coating of last whole plate (20) and following whole plate (21);
S3, dress paste shell: go up brush conducting resinl or tin cream (5) at last whole plate (20) or following whole plate (21), perhaps at the edge of shell (1) brush conducting resinl or tin cream (5), then shell (1) is bonded on whole plate (20) or the following whole plate (21);
S4, merging: adopt whole plate typography, the lower surface of last whole plate (20) or down the upper surface of whole plate (21) will go up whole plate (20) then and following whole plate (21) aligning compresses by the specification brush coating, and it is adhesively fixed by hot setting;
S5, cutting: upward whole plate (20) and the following whole plate (21) that bonds together cut, form single silicon capacitance microphone.
14. the manufacture method of silicon capacitance microphone according to claim 16, it is characterized in that, mounting components and parts among the described step S2 specifically comprises: go up brush acoustic sensor die bonding glue (12) and paste acoustic sensor chip (8) at last whole plate (20) or following whole plate (21), put IC device bonded adhesives (13) then and paste IC device (7), and putting in order plate (21) down or going up whole plate (20) and go up brush conducting resinl or tin cream (5) and paste other passive device (6).
15. the manufacture method of a silicon capacitance microphone is characterized in that, comprises the steps:
B1, making substrate: adopt and imbed the integral basis plate that fabrication techniques comprises some substrates (17), all comprise the embedding layer (18) that adopts other passive device of conduct (6) of imbedding technology formation in each piece substrate (17), and the upper and lower surface of each piece substrate (17) includes necessary wiring and pad;
B2, mount components and parts: adopt whole plate typography,, mount acoustic sensor chip (8) and IC device (7) then respectively at integral basis plate upper surface brush coating;
B3, mount shell: adopt whole plate typography,, mount shell (1) then and it is adhesively fixed by hot setting at the upper surface of integral basis plate or the edge brush conducting resinl or the tin cream (5) of shell (1);
B4, cutting: the integral basis plate is cut, form single silicon capacitance microphone.
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