CN101212013A - LED encapsulation method - Google Patents
LED encapsulation method Download PDFInfo
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- CN101212013A CN101212013A CNA2007101726294A CN200710172629A CN101212013A CN 101212013 A CN101212013 A CN 101212013A CN A2007101726294 A CNA2007101726294 A CN A2007101726294A CN 200710172629 A CN200710172629 A CN 200710172629A CN 101212013 A CN101212013 A CN 101212013A
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Abstract
The invention relates to an package method of a luminescent diode, which comprises the following steps: adhesive deposite and crystal solidifying are carried out; baking, wires welding, distribution of light transmission medium and light transmission medium deposite are carried out after crystal solidifying; baking, gum mixing and automatic glues pouring are carried out after light transmission medium deposite; baking is carried out after automatic glues pouring. The distribution of light transmission medium comprises the following steps: a first component and a second component are taken out and prepared according to proportion, wherein the first component is poly (dimethylsiloxane) and the second component is mainly composed by a multipolymer formed with dimethylsiloxane, methyl hydrogen group siloxane and vinyl siloxane; the weight content of the multipolymer in the second component is 94 percent-99 percent, wherein, the weight content of dimethylsiloxane is 84 percent-90 percent; the weight content of methyl hydrogen group siloxane is 4 percent-9 percent; the weight content of vinyl siloxane is 2 percent-7 percent. The light transmission medium deposite comprises the following step: the allocation matter distributed by the first component and the second component is drawn out as vacuum and pointed in the light exit surface of grain of the luminescent diode to form a light transmission medium layer.
Description
[technical field]
The present invention relates to a kind of light emitter diode seal method, or rather, relate to the method for packing of a kind of low light decay, long-term durability luminous diode.
[background technology]
Light-emitting diode is a kind of light emitting semiconductor device, is used as indicator light, display screen etc. widely.Light-emitting diode be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.Theoretical about 100000 hours of the life-span of light-emitting diode, but since light-emitting diode behind the generating positive and negative voltage of two ends when luminous, it promptly produces certain heat, if its heat is very fast being conducted not, will around wafer, heat spiral, this causes temperature to exceed the wafer junction temperature on the one hand, so that losing efficacy appears in wafer itself; Then cause peripheral encapsulating material on the other hand, insulating cement (elargol) or resin above the wafer or fluorescent material generation xanthochromia as bottom of wafer, so that the light that sends when wafer can the insulating cement of xanthochromia (elargol) or the resin that encapsulates above the wafer or phosphor substance absorb by it, cause the overall light efficiency of light-emitting diode a large amount of losses to occur, so that the light decay phenomenon occurred.From light-emitting diode product in the market, because the existence of above-mentioned light decay phenomenon, its life-span do not reach far away theoretical 100000 hours, generally in the time of 1000 hours, its light decay rate reaches more than 30%, thereby has shortened the life-span of light-emitting diode product to a great extent.Thereby, the important bottleneck that light decay has become the restriction light-emitting diode to use.Therefore, the appearance of a kind of new technology of market demand is to solve present light decay problem.
[summary of the invention]
Technical problem to be solved by this invention is to overcome above-mentioned defective, and the method for packing of a kind of low light decay, long-life LED is provided.
The present invention is achieved by the following technical solutions: a kind of light emitter diode seal method, comprise the steps: a glue, and be about to insulating cement and click and enter in the support reflector; Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put; Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion; Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity; Join light transmission medium, promptly take out first component in proportion, second component is prepared, stir then, it is fully mixed, wherein said first component is a dimethyl silicone polymer, described second component mainly consist of the copolymer that forms by dimethyl siloxane, methyl hydrogen radical siloxane and vinylsiloxane, the weight content of copolymer is 94%～99% in described second component, and wherein the weight content of dimethyl siloxane is 84%～90%, the weight content of methyl hydrogen radical siloxane is 4%～9%, the weight content of vinylsiloxane is 2%～7%; The point light transmission medium, the allotment object point that is formed by first component, the allotment of second component that is about to have taken out vacuum forms one deck light transmission medium on the light-emitting face of LED crystal particle; Toast behind the some light transmission medium, the support that is about to the good light transmission medium of point toasts, so that its curing; And join baking procedure behind glue, encapsulating, the encapsulating.
Described joining in the light transmission medium step, the weight ratio of described first component, second component is 1: 1.
In the baking procedure, baking temperature is at the 130-150 degree behind the described some light transmission medium, and stoving time was at 1-2 hour.
The weight content of copolymer is preferably 98% in described second component, and wherein the weight content of dimethyl siloxane is preferably 87%, the weight content of methyl hydrogen radical siloxane is preferably 7%, the weight content of vinylsiloxane is preferably 4%.
Also comprise r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in described second component, its weight content in second component is 0.5%～3%.
The weight content of described r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in second component is preferably 1%.
Also comprise the triethoxy methylsiloxane in described second component, its weight content in second component is 0.5%～3%.
The weight content of described triethoxy methylsiloxane in second component is preferably 1%.
After the step point was joined light transmission medium, the step point was joined behind the light transmission medium before the baking, also has one to vacuumize step, and promptly the composite that first component, the allotment of second component are formed carries out vacuum defoamation.
Behind the step encapsulating, behind the step encapsulating, before the baking, also have one to vacuumize step.
Compared with prior art, light emitter diode seal method of the present invention is by after the bonding wire step, by joining transparent medium and putting the light transmission medium step, make that forming one deck on the light-emitting face of LED crystal particle allocates the special light transmission medium that the back forms in proportion by first component and second component, and simultaneously baking temperature, time are controlled, thereby reduced light decay rate widely by the light-emitting diode of this method for packing encapsulation.
[description of drawings]
Fig. 1 is under the kindred circumstances, when adopting constant current 20mA testing current, carries out light decay result of experiment curve chart according to the light-emitting diode of disclosed method for packing encapsulation and the light-emitting diode of the traditional silica gel encapsulation of employing.
Fig. 2 is under the kindred circumstances, when adopting constant current 40mA testing current, carries out light decay result of experiment curve chart according to the light-emitting diode of disclosed method for packing encapsulation and the light-emitting diode of the traditional silica gel encapsulation of employing.
[embodiment]
Light-emitting diode according to method for packing encapsulation of the present invention comprises support, LED crystal particle, described LED crystal particle is fixed on the support, the light-emitting face top of described LED crystal particle is provided with one deck light transmission medium, this light transmission medium is formed by the first thick component and second component allotment that is in a liquid state, wherein said first component is a dimethyl silicone polymer, the copolymer that mainly the consisting of of described second component formed by dimethyl siloxane, methyl hydrogen radical siloxane and vinylsiloxane (
), also comprise simultaneously r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) (molecular structural formula:
) and the triethoxy methylsiloxane (molecular structural formula:
).The weight content of copolymer is 94%～99% (present embodiment is preferably 98%) in described second component, and wherein the weight content of dimethyl siloxane is that the weight content of 84%～90% (present embodiment is preferably 87%), methyl hydrogen radical siloxane is that the weight content of 4%～9% (present embodiment is preferably 7%), vinylsiloxane is 2%～7% (present embodiment is preferably 4%).Also comprise r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in described second component, its weight content in second component is 0.5%～3% (present embodiment is preferably 1%).Also comprise the triethoxy methylsiloxane in described second component, its weight content in second component is 0.5%～3% (present embodiment is preferably 1%).
The encapsulation process of the light-emitting diode that is disclosed in the present embodiment is for comprising the steps:
Step 1: some glue is about to insulating cement and clicks and enters in the support reflector.
Step 2: Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put.
Step 3:, make crystal grain and support fix adhesion Gu the baking of brilliant back is about to the semi-finished product of solid good crystal grain and puts into the high temperature baking box and toast.
Step 4: bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity.
Step 5: join light transmission medium, (present embodiment adopted weight ratio 1: 1) takes out first component promptly in proportion, second component is prepared, stir then, it is fully mixed, mixing time is about 5 minutes, wherein said first component is a dimethyl silicone polymer, mainly consisting of of described second component by dimethyl siloxane, the copolymer that methyl hydrogen radical siloxane and vinylsiloxane form, the weight content of copolymer is 94%～99% (present embodiment is preferably 98%) in described second component, and wherein the weight content of dimethyl siloxane is 84%～90% (present embodiment is preferably 87%), the weight content of methyl hydrogen radical siloxane is 4%～9% (present embodiment is preferably 7%), the weight content of vinylsiloxane is 2%～7% (present embodiment is preferably 4%).
Step 6: vacuumize, promptly the composite that is deployed into by first component, second component is carried out vacuum defoamation, the pumpdown time is about 5-10 minute.
Step 7: the some light transmission medium, the allotment object point that is formed by first component, the allotment of second component that is about to have taken out vacuum forms one deck light transmission medium on the light-emitting face of LED crystal particle.
Step 8: point toasts behind the light transmission medium, and the support that is about to the good light transmission medium of point is put into the high temperature baking box and toasted, so that its curing, temperature is at the 130-150 degree, and stoving time was at 1-2 hour.
Step 9: join glue, be about to the good A of preheating, B agent epoxy glue, be generally 1: 1 (weight) ratio and prepare, and stir, so that it fully mixes by certain.
Step 10: vacuumize, promptly the composite of preparing in the step 9 is carried out vacuum defoamation, the pumpdown time is about 5-10 minute.
Step 11: encapsulating, promptly utilize the encapsulating machine that glue is injected in die cavity or the support successively.
Step 12: toast behind the encapsulating, promptly carry out high-temperature baking, the adhesive curing that makes in the step 11 to be injected, baking temperature is 125 degree, time 8-10 hour.
Step 13: cut pin: promptly utilize diel, separately with its both positive and negative polarity.
Step 14: beam split, promptly utilize light splitting machine, classify according to relevant electrical parameters such as the voltage of product, brightness, colors.
In order to verify the light decay situation of the light-emitting diode that this kind method for packing encapsulates, the inventor has done a large amount of experiments.See also shown in Figure 1ly, this figure is under the kindred circumstances, when adopting constant current 20mA testing current, carries out light decay result of experiment curve chart according to the light-emitting diode and the light-emitting diode that adopts traditional silica gel encapsulation of disclosed method for packing encapsulation.As can be seen from this figure, sequence number 1 is the product of traditional silica gel encapsulation, does not have light decay in the time of 168 hours, during by 336 hours, 2% decay occurs, during by 504 hours, 4% decay occurred, during by 672 hours, 6% decay occurs, during by 840 hours, 10% decay occurred, and in the time of 1008 hours, its light decay rate reaches 15%.Sequence number 2 is that in the time of 168 hours, its luminous flux sustainment rate is 105% rising according to the light-emitting diode of disclosed method for packing encapsulation, during by 336 hours, still keep 105% luminous flux sustainment rate, during by 504 hours, the luminous flux sustainment rate is 108%, during by 672 hours, the luminous flux sustainment rate is 110%, during by 840 hours, the luminous flux sustainment rate is 109%, during by 1008 hours, it optical attenuation still do not occur, and the luminous flux sustainment rate is 109%.
The light decay situation of the light-emitting diode that the method for packing that adopts the present invention to disclose for further checking encapsulates, the inventor when employing constant current 40mA testing current, has carried out a large amount of experiments to its light decay situation again.See also shown in Figure 2ly, this figure is when adopting constant current 40mA testing current, carries out light decay result of experiment curve chart according to the light-emitting diode and the light-emitting diode that adopts traditional silica gel encapsulation of disclosed method for packing encapsulation.As can be seen from this figure, sequence number 1 is the product of traditional silica gel encapsulation, and in the time of 168 hours, its light decay rate reaches 14%, and during by 336 hours, its light decay rate reaches 22%, and during by 504 hours, its light decay rate reaches 33%, and optical attenuation is very serious.Sequence number 2 is that in the time of 168 hours, the luminous flux sustainment rate is 105% according to the light-emitting diode of disclosed method for packing encapsulation, during by 336 hours, the luminous flux sustainment rate is 105%, during by 504 hours, the luminous flux sustainment rate is 105%, optical attenuation still do not occur.
Need to prove that above-mentioned kindred circumstances is meant: (1) each experiment is all carried out under same laboratory, same time period and environmental condition; (2) each test event all is 20 light-emitting diodes randomly drawing from some single tubes wherein, as the sample of test.
More than describing is embodiments of the invention only, forgives and can understand, and under the prerequisite that does not depart from the present invention's design, to simple modification of the present invention and replacement, all should be included within the technical conceive of the present invention.
Claims (10)
1. a light emitter diode seal method comprises the steps:
Point glue is about to insulating cement and clicks and enters in the support reflector;
Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put;
Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion;
Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity;
Join light transmission medium, promptly take out first component in proportion, second component is prepared, stir then, it is fully mixed, wherein said first component is a dimethyl silicone polymer, described second component mainly consist of the copolymer that forms by dimethyl siloxane, methyl hydrogen radical siloxane and vinylsiloxane, the weight content of copolymer is 94%～99% in described second component, and wherein the weight content of dimethyl siloxane is 84%～90%, the weight content of methyl hydrogen radical siloxane is 4%～9%, the weight content of vinylsiloxane is 2%～7%;
The point light transmission medium, the allotment object point that is formed by first component, the allotment of second component that is about to have taken out vacuum forms one deck light transmission medium on the light-emitting face of LED crystal particle;
Toast behind the some light transmission medium, the support that is about to the good light transmission medium of point toasts, so that its curing; And
Join baking procedure behind glue, encapsulating, the encapsulating.
2. light emitter diode seal method as claimed in claim 1 is characterized in that: described joining in the light transmission medium step, the weight ratio of described first component, second component is 1: 1.
3. light emitter diode seal method as claimed in claim 1 or 2 is characterized in that: in the baking procedure, baking temperature is at the 130-150 degree behind the described some light transmission medium, and stoving time was at 1-2 hour.
4. light emitter diode seal method as claimed in claim 1 or 2, it is characterized in that: the weight content of copolymer is preferably 98% in described second component, and wherein the weight content of dimethyl siloxane is preferably 87%, the weight content of methyl hydrogen radical siloxane is preferably 7%, the weight content of vinylsiloxane is preferably 4%.
5. light emitter diode seal method as claimed in claim 4, it is characterized in that: also comprise r-(2 in described second component, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane), its weight content in second component is 0.5%～3%.
6. light emitter diode seal method as claimed in claim 5 is characterized in that: the weight content of described r-(2, the 3-glycidoxy) propyl trimethoxy silicane (r-glycidol ether propyl trimethoxy silicane) in second component is preferably 1%.
7. light emitter diode seal method as claimed in claim 4 is characterized in that: also comprise the triethoxy methylsiloxane in described second component, its weight content in second component is 0.5%～3%.
8. light emitter diode seal method as claimed in claim 7 is characterized in that: the weight content of described triethoxy methylsiloxane in second component is preferably 1%.
9. light emitter diode seal method as claimed in claim 1, it is characterized in that: after the step point is joined light transmission medium, the step point is joined behind the light transmission medium before the baking, also has one to vacuumize step, and promptly the composite that first component, the allotment of second component are formed carries out vacuum defoamation.
10. light emitter diode seal method as claimed in claim 1 is characterized in that: before the baking, also have one to vacuumize step behind the step encapsulating, behind the step encapsulating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101726294A CN100541847C (en) | 2007-12-20 | 2007-12-20 | Light emitter diode seal method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101726294A CN100541847C (en) | 2007-12-20 | 2007-12-20 | Light emitter diode seal method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101212013A true CN101212013A (en) | 2008-07-02 |
| CN100541847C CN100541847C (en) | 2009-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101726294A Expired - Fee Related CN100541847C (en) | 2007-12-20 | 2007-12-20 | Light emitter diode seal method |
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| CN (1) | CN100541847C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872232A (en) * | 2014-03-28 | 2014-06-18 | 深圳市世民科技有限公司 | LED flip chip structure and manufacturing method thereof |
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2007
- 2007-12-20 CN CNB2007101726294A patent/CN100541847C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872232A (en) * | 2014-03-28 | 2014-06-18 | 深圳市世民科技有限公司 | LED flip chip structure and manufacturing method thereof |
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|---|---|
| CN100541847C (en) | 2009-09-16 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: NINGBO DEJIA LIGHTING TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: NINGBO ANDY OPTOELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20120625 |
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Effective date of registration: 20120625 Address after: 315400 Xiao Dong Industrial Park, Zhejiang, Yuyao Patentee after: Ningbo Dejia Lighting & Technology Co., Ltd. Address before: 315400 industrial functional zone, southwest Street, Zhejiang, Yuyao Patentee before: Ningbo Andy Optoelectronic Technology Co., Ltd. |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090916 Termination date: 20121220 |