CN101207104B - 埋入式电容超低电感设计 - Google Patents
埋入式电容超低电感设计 Download PDFInfo
- Publication number
- CN101207104B CN101207104B CN 200610167604 CN200610167604A CN101207104B CN 101207104 B CN101207104 B CN 101207104B CN 200610167604 CN200610167604 CN 200610167604 CN 200610167604 A CN200610167604 A CN 200610167604A CN 101207104 B CN101207104 B CN 101207104B
- Authority
- CN
- China
- Prior art keywords
- electrode
- electric capacity
- hole
- capacitor
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000013461 design Methods 0.000 title abstract description 19
- 239000003990 capacitor Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 11
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 238000012545 processing Methods 0.000 abstract description 3
- 238000007796 conventional method Methods 0.000 abstract 1
- 230000004044 response Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 210000002186 septum of brain Anatomy 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610167604 CN101207104B (zh) | 2006-12-19 | 2006-12-19 | 埋入式电容超低电感设计 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610167604 CN101207104B (zh) | 2006-12-19 | 2006-12-19 | 埋入式电容超低电感设计 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101207104A CN101207104A (zh) | 2008-06-25 |
CN101207104B true CN101207104B (zh) | 2011-08-24 |
Family
ID=39567147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200610167604 Expired - Fee Related CN101207104B (zh) | 2006-12-19 | 2006-12-19 | 埋入式电容超低电感设计 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101207104B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102117768B (zh) * | 2009-12-30 | 2013-07-31 | 中国科学院微电子研究所 | 制作具有多电极超低电感的多槽pn结电容器的方法 |
CN111463136A (zh) * | 2020-04-30 | 2020-07-28 | 北京飞宇微电子电路有限责任公司 | 一种金属封装外壳及其制作方法和混合集成电路 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1173803A (zh) * | 1996-06-12 | 1998-02-18 | 国际商业机器公司 | 带埋置式去耦电容的印刷电路板及其制造方法 |
CN1377058A (zh) * | 2001-03-27 | 2002-10-30 | 华邦电子股份有限公司 | 埋入式电容器下电极的制造方法 |
US6910266B2 (en) * | 2002-12-24 | 2005-06-28 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board with embedded capacitors therein, and process for manufacturing the same |
-
2006
- 2006-12-19 CN CN 200610167604 patent/CN101207104B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1173803A (zh) * | 1996-06-12 | 1998-02-18 | 国际商业机器公司 | 带埋置式去耦电容的印刷电路板及其制造方法 |
CN1377058A (zh) * | 2001-03-27 | 2002-10-30 | 华邦电子股份有限公司 | 埋入式电容器下电极的制造方法 |
US6910266B2 (en) * | 2002-12-24 | 2005-06-28 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board with embedded capacitors therein, and process for manufacturing the same |
Non-Patent Citations (1)
Title |
---|
蔡积庆.埋入电容基板技术.《印制电路信息》.2004, * |
Also Published As
Publication number | Publication date |
---|---|
CN101207104A (zh) | 2008-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: CHENGDU RH OPTOELECTRONIC TECHNOLOGY.,LTD. Free format text: FORMER OWNER: WAN LIXI Effective date: 20100427 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 NO.3, BEITUCHENG WEST ROAD, CHAOYANG DISTRICT, BEIJING CITY TO: 610045 2/F, AFFILIATED NO.6, NO.188, ZIRUI AVENUE, HIGH-TECH ZONE, CHENGDU CITY |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100427 Address after: 610045, Chengdu hi tech Zone Purple Road 188, 6, attached to the 2 floor Applicant after: CHENGDU RUIHUA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Applicant before: Wan Lixi |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210302 Address after: 100029 room 328, building 15, No.3, Beitucheng West, Chaoyang District, Beijing Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 2 / F, no.188-6, Zirui Avenue, Chengdu hi tech Zone, Sichuan 610045 Patentee before: CHENGDU RUIHUA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110824 |