CN101202311A - Floating gate flash memory device structure and method for making floating gate - Google Patents
Floating gate flash memory device structure and method for making floating gate Download PDFInfo
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- CN101202311A CN101202311A CNA2006101194067A CN200610119406A CN101202311A CN 101202311 A CN101202311 A CN 101202311A CN A2006101194067 A CNA2006101194067 A CN A2006101194067A CN 200610119406 A CN200610119406 A CN 200610119406A CN 101202311 A CN101202311 A CN 101202311A
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- floating
- silicon
- memory device
- flash memory
- gate
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- 238000000034 method Methods 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- 210000001364 upper extremity Anatomy 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a floating-gate flash memory device which comprises a source electrode and a drain electrode; wherein, a poly-silicon floating-gate and a control grid are arranged above the gap between the source electrode and the drain electrode, and a silicon dioxide layer is arranged between the floating-gate and the source electrode and the drain electrode; the upper edge of the floating-gate is arch-shaped with two ends projecting upward, and the lower edge of the control grid is arch-shaped with middle part projecting upward; the control grid completely covers the floating-gate; silicon dioxide is arranged between the floating-gate and the control grid. The invention also discloses a method which can manufacture the floating-gate of the floating-gate flash memory device by etching and silicon thermal oxidization. The method of the invention for producing the floating-gate in the floating-gate flash memory device has simple procedure and is easy to realize and the produced floating-gate flash memory device can greatly improve the 'read' and 'wipe' working efficiency of the flash memory device, and improve the performance of the device.
Description
Technical field
The present invention relates to a kind of semiconductor device structure, especially a kind of floating gate flash memory device structure; The invention still further relates to a kind of method of making floating boom in the floating gate flash memory device structure.
Background technology
Course of work when existing floating gate flash memory carries out " writing " operation can be referring to shown in Figure 1, add on the control gate 5 that certain voltage makes the raceway groove conducting between source electrode 2 and the drain electrode 1, drain electrode 1 connects high voltage, source electrode 2 connects low-voltage, electronics flows to drain electrode 1 and quicken to produce hot electron under near the high electric field action drain electrode 1 from source electrode 2, and the silicon dioxide layer 3 that the portion of hot electronics passes below the floating boom 4 enters floating boom 4.And when carrying out " wiping " operation, as shown in Figure 2, control gate 5 connects low-voltage, and source electrode 2 and drain electrode 1 connect high voltage, and electronics passes silicon dioxide layer 3 from floating boom 4 and flows into source electrode 2.Because " wiping " and " writing " shared layer of silicon dioxide layer 3, it is independent respectively to make that " wiping " and " writing " is not easy, so operating efficiency can't improve.
Summary of the invention
Technical problem to be solved by this invention is, a kind of floating gate flash memory device structure is provided, can increase substantially flush memory device and " write " operating efficiency with " wipings ", thus the performance of raising device.
For solving the problems of the technologies described above, the technical scheme of floating gate flash memory device structure of the present invention is, comprise source electrode and drain electrode, above gap between described source electrode and the drain electrode, be provided with multi-crystal silicon floating bar and control gate, be separated with silicon dioxide layer between described floating boom and described source electrode and the drain electrode, the upper limb of described floating boom is the arcs of two ends to upper process, and described control gate covers described floating boom fully, is separated with silicon dioxide between described floating boom and the described control gate.
Another technical problem to be solved by this invention is, a kind of method of making floating boom in the floating gate flash memory device structure is provided, and its step is simple, is easy to realize, the floating gate structure of producing can increase substantially flush memory device and " write " operating efficiency with " wipings ", thus the performance of raising device.
For solving the problems of the technologies described above, the technical scheme that the present invention makes the method for floating boom in the floating gate flash memory device structure is to comprise the steps:
(1) deposit polysilicon, oxidation growth silicon dioxide layer, deposit silicon nitride afterwards on described polysilicon;
(2) photoetching silicon nitride;
(3) pass through the silicon thermal oxidation growthing silica in the position of being fallen silicon nitride by photoetching;
(4) with the silicon dioxide layer of chemical liquid etch silicon nitride layer and growth in (1) step, form the silicon oxidation isolated area;
(5) remove the polysilicon segment that is not covered by the silicon oxidation area of isolation.
The present invention makes the method for floating boom in the floating gate flash memory device structure, and its step is simple, is easy to realize, the floating gate flash memory device of producing can increase substantially flush memory device and " write " operating efficiency with " wipings ", thus the performance of raising device.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 carries out the schematic diagram of " writing " operation for existing flush memory device;
Fig. 2 carries out the schematic diagram of " wiping " operation for existing flush memory device;
Fig. 3 is the structural representation of floating gate flash memory device structure of the present invention;
Fig. 4 carries out the schematic diagram of " writing " operation for floating gate flash memory device structure of the present invention;
Fig. 5 carries out the schematic diagram of " wiping " operation for floating gate flash memory device structure of the present invention;
Fig. 6 to Figure 10 makes the schematic diagram of each step in the method for floating boom in the floating gate flash memory device structure for the present invention.
Reference numeral is among the figure, 1. drain electrode; 2. source electrode; 3. silicon dioxide layer; 4. floating boom; 5. control gate; 6. silicon oxidation isolated area; 7. polysilicon; 8. silicon dioxide layer; 9. silicon nitride layer.
Embodiment
The structural representation of floating gate flash memory device structure of the present invention can be referring to shown in Figure 3, comprise source electrode 2 and drain electrode 1, above described source electrode 2 and the gap between 1 of draining, be provided with multi-crystal silicon floating bar 4 and control gate 5, described floating boom 4 and described source electrode 2 and drain and be separated with silicon dioxide layer 3 between 1, the upper limb of described floating boom 4 is the arcs of two ends to upper process, described control gate 5 covers described floating boom 4 fully, is separated with silicon dioxide between described floating boom 4 and the described control gate 5.The lower edge of described control gate 5 is middle arc to upper process.
The course of work of floating gate flash memory device structure of the present invention when carrying out " writing " operation can be referring to shown in Figure 4, add on the control gate 5 that certain voltage makes the raceway groove conducting between source electrode 2 and the drain electrode 1, drain electrode 1 connects high voltage, source electrode 2 connects low-voltage, electronics flows to drain electrode 1 and quicken to produce hot electron under near the high electric field action drain electrode 1 from source electrode 2, and the silicon dioxide layer 3 that the portion of hot electronics passes below the floating boom 4 enters floating boom 4.
The course of work of floating gate flash memory device structure of the present invention when carrying out " wiping " operation can be referring to shown in Figure 5, and control gate 5 connects high voltage, and source electrode 2 and drain electrode 1 connect high voltage, and electronics passes silicon oxidation isolated area 6 and flows into control gate 5 from the tip of the both sides of floating boom 4." wiping " of the present invention used different silicon dioxide layer 3 with " writing ", in " writing ", use silicon dioxide layer 3, in " wiping ", then used silicon oxidation isolated area 6, therefore make " wiping " and " writing " independently to carry out respectively, improved the operating efficiency of flush memory device greatly.
For making the floating boom in the floating gate flash memory device structure of the present invention, the present invention also provides a kind of method of making this floating boom, and its step comprises:
(1) the deposit polysilicon 7, oxidation growth silicon dioxide 8 on described polysilicon 7, and deposit silicon nitride 9 afterwards, as shown in Figure 6;
(2) the photoetching silicon nitride 9, and the silicon nitride of floating boom position is etched away, and expose silicon dioxide layer 8, as shown in Figure 7;
(3) pass through silicon thermal oxidation growthing silica 6 in the position of being fallen silicon nitride 9 by photoetching, as shown in Figure 8;
(4) silicon dioxide 6 of growing by silicon thermal oxidation in 8, the (3) steps with the silicon dioxide layer of chemical liquid etch silicon nitride layer 9 and growth in (1) step just forms silicon oxidation isolated area 6, as shown in Figure 9;
(5) remove polysilicon 7 parts that do not covered by silicon oxidation isolated area 6 territories, finally having formed upper limb is the floating booms of two ends to the arc of upper process, as shown in figure 10.
The present invention makes the method for floating boom in the floating gate flash memory device structure, and its step is simple, is easy to realize, the floating gate flash memory device of producing can increase substantially flush memory device and " write " operating efficiency with " wipings ", thus the performance of raising device.
Claims (4)
1. floating gate flash memory device structure, comprise source electrode and drain electrode, above gap between described source electrode and the drain electrode, be provided with multi-crystal silicon floating bar and control gate, be separated with silicon dioxide layer between described floating boom and described source electrode and the drain electrode, it is characterized in that, the upper limb of described floating boom is the arcs of two ends to upper process, and described control gate covers described floating boom fully, is separated with silicon dioxide between described floating boom and the described control gate.
2. floating gate flash memory device structure according to claim 1 is characterized in that, the lower edge of described control gate is middle arc to upper process.
3. a method of making floating boom in the floating gate flash memory device structure as claimed in claim 1 is characterized in that, comprises the steps:
(1) deposit polysilicon, oxidation growth silicon dioxide layer, deposit silicon nitride afterwards on described polysilicon;
(2) photoetching silicon nitride;
(3) pass through the silicon thermal oxidation growthing silica in the position of being fallen silicon nitride by photoetching;
(4) with the silicon dioxide layer of chemical liquid etch silicon nitride layer and growth in (1) step, form the silicon oxidation isolated area;
(5) remove the polysilicon segment that is not covered by the silicon oxidation area of isolation.
4. the method for floating boom is characterized in that in the making floating gate flash memory device structure according to claim 3, and described (5) step is removed the polysilicon segment that is not covered by the silicon oxidation area of isolation and adopts silicon/silicon dioxide to select to finish than high dry carving technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101194067A CN101202311A (en) | 2006-12-11 | 2006-12-11 | Floating gate flash memory device structure and method for making floating gate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101194067A CN101202311A (en) | 2006-12-11 | 2006-12-11 | Floating gate flash memory device structure and method for making floating gate |
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| CN101202311A true CN101202311A (en) | 2008-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101194067A Pending CN101202311A (en) | 2006-12-11 | 2006-12-11 | Floating gate flash memory device structure and method for making floating gate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339834A (en) * | 2011-09-28 | 2012-02-01 | 上海宏力半导体制造有限公司 | Flash memory unit and forming method thereof |
| US9269717B2 (en) | 2014-03-06 | 2016-02-23 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation | EEPROM device and forming method and erasing method thereof |
| CN107863298A (en) * | 2017-12-06 | 2018-03-30 | 武汉新芯集成电路制造有限公司 | The preparation method and floating gate type flash memory of floating gate type flash memory |
-
2006
- 2006-12-11 CN CNA2006101194067A patent/CN101202311A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339834A (en) * | 2011-09-28 | 2012-02-01 | 上海宏力半导体制造有限公司 | Flash memory unit and forming method thereof |
| CN102339834B (en) * | 2011-09-28 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | Flash cell and forming method thereof |
| US9269717B2 (en) | 2014-03-06 | 2016-02-23 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation | EEPROM device and forming method and erasing method thereof |
| CN107863298A (en) * | 2017-12-06 | 2018-03-30 | 武汉新芯集成电路制造有限公司 | The preparation method and floating gate type flash memory of floating gate type flash memory |
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Open date: 20080618 |