CN101197278A - Method for altering mechanical and optical performance of thin film - Google Patents
Method for altering mechanical and optical performance of thin film Download PDFInfo
- Publication number
- CN101197278A CN101197278A CNA2007100508061A CN200710050806A CN101197278A CN 101197278 A CN101197278 A CN 101197278A CN A2007100508061 A CNA2007100508061 A CN A2007100508061A CN 200710050806 A CN200710050806 A CN 200710050806A CN 101197278 A CN101197278 A CN 101197278A
- Authority
- CN
- China
- Prior art keywords
- stress
- film
- membrane
- silicon nitride
- transition zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a method for changing the mechanics and optical performances of membrane, which is characterized in that an amorphous silicon dioxide transition layer with pressing stress is arranged on a substrate, and then an amorphous silicon nitrogen membrane with tension stress is arranged on the transition layer. The method overcomes the drawback in the prior art and improves original cragged stress grads by simple overlapping of common membrane with similar characteristic and opposite stress, thereby increasing the light reflection rate of amorphous silicon nitrogen membrane by reducing the tension stress of the membrane, and correspondingly reducing hardness and young modulus of the membrane, so that the stress of special membrane can be effectively controlled. A low stress silicon nitrogen membrane with low internal stress can be prepared, thus improving the working performance of the membrane, reducing cost of raw material and being suitable for large-scale industrialized production.
Description
Technical field
The present invention relates to the film of semiconductor device technical field, be specifically related to a kind of method that changes film mechanics and optical property.
Background technology
The size of membrane stress directly affects the pattern of material and device, can cause the rete warpage when serious, break, even it is badly damaged that device is taken place.Moreover, membrane stress also may have an immense impact on to the performance of material.For example, in recent years the strained silicon technology of extensive use during semiconductor is made is utilized to a certain degree twin shaft or single shaft membrane stress (generally being diastolic pressure) effect exactly, and carrier mobilities such as the electronics of silicon and hole are all significantly improved, the reduction that causes the lifting of the device speed of service and energy consumption thus is (referring to M.Leong, B.Doris, J.Kedzierski, K.Rim, M.Yang, Science, 306,2057-2060 (2004) document).So membrane stress control has become influences semiconductor device manufacturing success or failure, reach one of key factor of performance height.
Traditionally, membrane stress is generally controlled by the condition optimizing method: promptly by systematically changing the thin film deposition growth conditions, comprise power, reactive gas species, pressure, depositing temperature, time, speed, substrate etc., realize the control to membrane stress.The people's such as A.K. Huo Qi Burger that on April 4th, 2007 announced Chinese patent CN 1940132A has described a kind of these class methods, different with common employing silane reaction gas, the author adopts a kind of new reacting gas (amino silane), prepare the silicon nitride film that has low hydrogen concentration, hangs down contaminating impurity, realize control thus membrane stress.Then having described in middle Yao's Chinese patent CN 1389589A of announcing on January 8th, 2003 is a kind of by add the method for inert diluent gas such as argon gas in reacting gas, utilizes the LPCVD technology to prepare the controlled superthick nitride silicon thin film of stress.The advantage of condition optimizing method is that growth apparatus and method are simple, is easy to adopt, and shortcoming is that disturbing factor is many, the repeatability of product and comparativity are poor.
The another kind of method that is used to control membrane stress is the scrap build method: promptly by changing or increase some function of equipment pointedly, impel growth for Thin Film mode and material structure to change, thereby prepare the thin-film material with desirable stress.In recent years the catalysis type chemical vapour deposition (CVD) (Cat-CVD) of Cai Yonging, double frequency type plasma enhanced chemical vapor deposition (DF-PECVD), ion inject film iso-stress control technology and all belong to these class methods.For example, on February 14th, 2007 disclosed Ke Bumu. the Chinese patent CN 1914717A that people such as army declare, described by the DF-PECVD method, change the high frequency-low frequency ratio of radio-frequency power supply, the controlled silicon nitride film of preparation stress.In addition, disclosed Yamamoto one youth's Chinese patent CN 1203449A described and adopted ion directly to be injected into method in the silicon nitride film on December 30th, 1998, injected energy of ions and dosage by control, the character and the size of control membrane stress.The Chinese patent CN 1716548A that on January 4th, 2006, disclosed Ah executing horse .B. looked into people such as the gram Lavalle base of a fruit has then described the method for mixing by in film, makes the stress of film such as silicon nitride controlled.The advantage of scrap build method is that effect is obvious, and shortcoming is to have increased equipment cost, and the change of material growth pattern also may bring some negative effects.For example, when adopting the DF-PECVD technology,,, also can therefore change the chemical constitution and the photoelectric properties of film but then though can reduce the tensile stress of silicon nitride film owing to increased the low-energy ion bombardment under the low frequency; And when adopting the Cat-CVD technology (referring to A.Masuda, H.Umemoto, H.Matsumura, ThinSolid Films, 501,149-153 (2006) document), owing to utilize metallic catalyst to induce film to grow fast, will be inevitably metallic pollution be incorporated in the middle of the film.
On May 16th, 2007 disclosed R. Su Yanahayanan. people's such as Yale Chinese patent CN 1964002A has described another method, this patent is by adding the intermediate layer of the different stress of one deck in the middle of two-layer amorphous silicon nitride films, regulate the stress gradient of film with this, the controlled silicon nitride film of preparation stress, this technical scheme belongs to a kind of new method, but its membrane structure and complex manufacturing technology, the production cost height is difficult for being applied in the extensive manufacturing of device.
Summary of the invention
Technical problem to be solved by this invention is how a kind of method that changes film mechanics and optical property is provided, this method has overcome existing defective in the prior art, close by character, but the simple superposition of the general thin that stress is opposite, improve original precipitous stress gradient, the optical index of amorphous silicon nitride films is increased, and the hardness of film, Young's moduluss etc. are corresponding to be reduced, thereby control the stress of certain thin films effectively, prepare the lower low stress nitride silicon thin film of internal stress, improved the service behaviour of film, reduced cost of material, suitable large-scale industrialized production.
Technical problem proposed by the invention is to solve like this: a kind of method that changes film mechanics and optical property is provided, it is characterized in that, the amorphous silica transition zone that one deck has compression is set on substrate, the amorphous silicon nitride film that one deck has tensile stress is set on described transition zone then again.
Method according to change film mechanics provided by the present invention and optical property is characterized in that preparation process is as follows:
1. clean substrate, put into the reactor of vacuum pumping after the drying;
2. on the surface of substrate, use SiH
4And N
2O utilizes reactor growth one deck amorphous silica transition zone as reacting gas;
3. on the surface of amorphous silica transition zone, use SiH
4And NH
3As reacting gas, continue to utilize reactor one deck amorphous silicon nitride film of on the amorphous silica transition zone, growing, form silicon nitride and the compound double membrane structure of silicon dioxide;
4. after being cooled to room temperature, from reactor, take out stand-by.
Method according to change film mechanics provided by the present invention and optical property is characterized in that, described substrate is monocrystalline silicon piece, SiO
2A kind of in/Si, polymer (Polymer) film, glass, pottery and the metal substrate.
Method according to change film mechanics provided by the present invention and optical property, it is characterized in that described reactor is plasma enhanced chemical vapor deposition (PECVD) system or low-pressure chemical vapor deposition (LPCVD) system, high vacuum chemical vapour deposition (UHVCVD) system etc.
Method according to change film mechanics provided by the present invention and optical property, it is characterized in that, the thickness of described amorphous silica transition zone is 50～1500nm, and the best is 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 400nm, 500nm, 600nm, 700nm etc.
Method according to change film mechanics provided by the present invention and optical property, it is characterized in that, the thickness of described amorphous silicon nitride film is 50～1000nm, and the best is 50nm, 100nm, 200nm, 300nm, 400nm, 450nm, 500nm, 600nm, 700nm, 800nm etc.
Method according to change film mechanics provided by the present invention and optical property is characterized in that, when adopting the PECVD reactor, the growth temperature of amorphous silica transition zone and amorphous silicon nitride film is 150～400 ℃, and the best is 250 ℃, 300 ℃ etc.
The compound double membrane that the present invention structure is made up of the silicon dioxide of certain thickness silicon nitride with tensile stress and compression, make the internal stress of silicon nitride film change weak compression into from strong tensile stress, membrane stress is effectively controlled, the more important thing is, utilize chemical bond strength, density that the change of stress forces silicon nitride film etc. to change, cause silicon nitride film thus under constant prerequisite such as chemical composition, key class, corresponding change all takes place in performances such as its mechanics and optics.The present invention does not change the growth conditions of material, does not increase any auxiliary equipment yet, is easy to control, effect is obvious, so, the invention provides a kind of new way that changes the thin film physics performance.
Description of drawings
Fig. 1 implements the controlled complex thin film structure schematic diagram of stress of the present invention;
Fig. 2 is the step instrument measurement result of silicon chip curvature after the film growth: A, silicon dioxide monofilm, B, silicon nitride monofilm, C, silicon nitride/silicon dioxide compound double membrane;
Fig. 3 is the result who adopts Raman spectral measurement checking membrane stress to change: A, different film are at 520cm
-1Near Si-Si peak, B, different film are at 80～520cm
-1The Raman spectrum of scope;
Fig. 4 is the result who adopts mechanical properties such as nano impress method checking film hardness, Young's modulus to change: A, silicon nitride monofilm, B silicon nitride/silicon dioxide compound double membrane.
Wherein, 1, substrate, 2, the excessive layer of silicon dioxide, 3, silicon nitride film.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing and embodiment.
Guiding theory of the present invention is in the composite double layer membrane structure, by the compression of lower floor's amorphous silica transition zone 2, suppresses the tensile stress of top layer amorphous silicon nitride film 3, prepares the low stress laminated film, as shown in Figure 1.Preparation embodiment of the present invention is as follows: 1. select the substrate 1 of silicon wafer as film growth for use, with Piranha solution-treated and washed with de-ionized water, soak with rare hydrofluoric acid solution then earlier, after drying up with nitrogen, put into plasma and strengthen (PECVD) system, vacuumize; 2. in surface of silicon substrate, use SiH
4And N
2O is as reacting gas, and utilizing PECVD is the amorphous silica transition zone 2 of 50～1500nm at 300 ℃ of layer thicknesses of growing down; 3. on the surface of the excessive layer 2 of silicon dioxide, use SiH
4And NH
3As reacting gas, continuing to utilize PECVD is the amorphous silicon nitride film 3 of 50～1000nm at 300 ℃ of layer thicknesses of growing down, forms silicon nitride and the compound double membrane structure of silicon dioxide; 4. after sample is cooled to room temperature, sample is taken out from the PECVD system, the introducing of silicon dioxide transition zone 2 is effectively controlled the stress of silicon nitride film 3, and is adjustable in tensile stress and compression scope.
The concrete technology of above-mentioned preparation embodiment comprises: the preparation of (1) film growth substrate: select for use 4 inches Si (100) silicon chip as the growth for Thin Film substrate, before the experiment, earlier with the Piranha solution (concentrated sulfuric acid: hydrogen peroxide=7: 3 (volume ratio)) handled 10 minutes down in 80 ℃, rinse well with deionized water, be to soak 90 seconds under the room temperature in 1.5: 10 hydrofluoric acid (HF) solution in concentration then, dry up silicon chip with high pure nitrogen at last, transfer to immediately in the prechamber of PECVD system, vacuumize; (2) growth of silicon dioxide transition zone: when the pressure of prechamber reaches 4 * 10
-2Behind the Torr, Si (100) substrate is passed to main vacuum chamber, substrate is heated to 300 ℃, behind the temperature stabilization, opens radio-frequency power supply, feeds silane (SiH
4) and laughing gas (N
2O) reaction gas, the representative condition of cvd silicon dioxide film is: rf frequency is 13.56MHz; Power is 600W; N
2O/SiH
4Flow-rate ratio is 100/150sccm; Underlayer temperature is 300 ℃; The about 2.2nm/s of deposition rate; Deposition growing is 105 seconds on Si (100) substrate; The pressure of main vacuum chamber is 0.6Torr in the deposition; The thickness of silica membrane is 240nm; (3) growth of silicon nitride film: after the silicon dioxide transition zone growth of (2) step, under the situation that does not expose atmosphere, feed silane and ammonia (NH
3) reaction gas, continuing the cvd nitride silicon thin film on the surface of silicon dioxide, the representative condition of cvd nitride silicon thin film is: rf frequency is 13.56MHz; Power is 600W; NH
3/ SiH
4Flow-rate ratio is 300 ℃ for the 200/250sccm underlayer temperature; The about 1.5nm/s of deposition rate, sedimentation time are 78 seconds; The pressure of main vacuum chamber is 0.6Torr in the deposition; The thickness of silicon nitride film is 110nm; (4) after (3) step, sample is cool to room temperature in main vacuum chamber, then, sample is taken out from vacuum chamber, and finding has uniform specular skipper film to generate on the surface of substrate, is 110nm silicon nitride/240nm silicon dioxide composite double layer film.Measurement result shows, the introducing of 240nm silicon dioxide transition zone makes the membrane stress of 110nm silicon nitride (change weak compression approximately+360MPa) into (approximately-50MPa) from strong tensile stress.
Silicon chip of the present invention cleans not to be only limited to and adopts Piranha and hydrofluoric acid solution, also comprises the cleaning that other solution known to the employing in the industry and method are carried out.The film growth substrate also is not particularly limited, and except Si (100) silicon chip, also comprises other substrate, for example the monocrystalline silicon piece of other crystal orientation and size, SiO
2(according to substrate kind difference, adopting suitable cleaning) such as/Si, polymer (Polymer) film, glass, pottery, metal substrate can utilize similar composite double layer or more multi-layered membrane structure to reach the controlled purpose of membrane stress equally.The transition zone of Cai Yonging is not particularly limited in addition, except silicon dioxide film, can adopt other individual layer that is compression or laminated film, for example silicon oxynitride (SiO as required
xN
y), silica (SiO
x), the silicon nitride of carbon dope, one or more films in the carborundum, can make the tensile stress of silicon nitride film controlled equally.
The preparation method of film such as silicon nitride, silicon dioxide is not only limited to the PECVD technology among the present invention, also comprises films such as the silicon nitride that utilizes other method preparation known in the industry such as low pressure or rpcvd (LPCVD, RPCVD), high vacuum chemical vapour deposition (UHVCVD), electron beam evaporation (EBE), ald (ALD), magnetron sputtering (MS), silica.
Through following methods analyst, provable employing composite double layer film makes the stress generation significant change of silicon nitride film, and corresponding change also takes place performances such as other mechanics of provable film and optics.
Adopt material preparation method of the present invention, the low stress laminated film of preparing, characterize through the cross-sectional scans electron microscope, show at the individual layer silicon nitride film of silicon face direct growth that because of being subjected to stronger tensile residual stresses effect the film surface deformation that is distorted is formed with the undaform surface on protruding island, but, on the silicon dioxide transition zone growth phase with silicon nitride film the time, stress is effectively alleviated, thereby makes the laminated film that even, smooth, interface, surface is relaxed.Membrane stress carries out measurements and calculations through the step instrument to silicon chip curvature, and the result is shown in Fig. 2 (A-C).Radius of curvature measurement result according to Fig. 2 (A-C), and M.P.Hughey, R.F.Cook, Journal of Applied Physics, 97, the Stoney formula and the relevant parameter of 114914 (2005) bibliographical informations, the Stress calculation result of 550nm silicon dioxide (Fig. 2 A), 110nm silicon nitride (Fig. 2 B) and 110nm silicon nitride/240nm silicon dioxide composite membrane (Fig. 3 C) is respectively-472MPa (compression) ,+358MPa (tensile stress) and-57MPa (compression).The STRESS VARIATION of film also through the measurement checking of Raman spectrum, shown in Fig. 3 (A), shows that the order of the Si-Si peak shift of various sample is: silicon nitride film＜silicon nitride/silicon dioxide composite membrane＜silicon dioxide film.Peak shift measurement result according to Fig. 3 (A), and H.Talaat, S.Negm, H.E.Schaffer, F.Adar, A.G.Nassiopoulos, Applied Surface Science, 123/124, the Stress calculation empirical equation and the relevant parameter of 742-745 (1998) bibliographical information, the stress of 550nm silicon dioxide film, 110nm silicon nitride film, 110nm silicon nitride/240nm silicon dioxide composite membrane be calculated as respectively-441MPa (compression) ,+378MPa (tensile stress) and-38MPa (compression).Raman result is consistent with the curvature measurement result, proves that all the composite double layer membrane structure that the present invention prepares can control membrane stress effectively.Raman 80-500cm
-1The 150cm of spectrogram (Fig. 3 B)
-1And 480cm
-1The broad peak at place proves that also relevant film is a non-crystalline material.
The optical property of film is measured through ellipsometer test.The result shows that the refractive index (lambda1-wavelength is 632.8nm) of silicon dioxide film, silicon nitride film, silicon nitride/silicon dioxide composite membrane is respectively 1.4681,2.1036 and 2.1258/1.4393.Show when the stress of silicon nitride film by tensile stress (+(57MPa) time, optical index increases to 2.1258 by 2.1036 358MPa) to change compression into; The situation of silicon dioxide film is just opposite, and along with the minimizing of its compression intensity, optical index reduces to 1.4393 by 1.4681.Mechanical properties such as the hardness of film, Young's modulus are measured through the nano impress method, and representative result is shown in Fig. 4 (A-B).The result shows, silicon nitride film stress by tensile stress (+358MPa) become compression (57MPa) time, the film Young's modulus reduces to 143GPa (Fig. 4 B) by 226GPa (Fig. 4 A), and film hardness also reduces to 24.5GPa (Fig. 4 B) by 36.4GPa (Fig. 4 A).
Summary is got up, the present invention utilizes conventional P ECVD equipment, at the growth conditions that does not change material, do not increase under the prerequisite of any auxiliary equipment yet, only form the change (becoming double-layered compound film) of structure, make the internal stress of silicon nitride film (change weak compression approximately+360MPa) significantly into (approximately-50MPa) by strong tensile stress by monofilm by film.Importantly, utilize the change of stress that the chemical bond strength, density etc. of silicon nitride film are changed, cause the optical index of film to increase thus, and corresponding minimizings such as hardness, Young's modulus.
The method of stress control material performance described in the invention, be not only limited to the physical property that can be used for controlling optoelectronic films such as silicon nitride, silica, also can expand to other material system (as heterojunction, superlattice, quantum dot etc.), can adopt thought of the present invention similarly: promptly be superimposed as composite double layer or more multi-layered structure by the opposite matching materials of stress characteristics, the stress of control material, and regulate and control the physical property such as electricity, optics, mechanics of associated materials thus; And the low stress membrane material of the present invention preparation is not only limited in the suspension microbridge that can be applied in the uncooled ir detector, also can be applicable to other device, as microelectronics or nanometer electronic device, MEMS (micro electro mechanical system) (MEMS), microprobe etc.
Claims (7)
1. a method that changes film mechanics and optical property is characterized in that, the amorphous silica transition zone that one deck has compression is set on substrate, and the amorphous silicon nitride film that one deck has tensile stress is set on described transition zone then again.
2. the method for change film mechanics according to claim 1 and optical property is characterized in that preparation process is as follows:
1. clean substrate, put into the reactor of vacuum pumping after the drying;
2. on the surface of substrate, use SiH
4And N
2O utilizes reactor growth one deck amorphous silica transition zone as reacting gas;
3. on the surface of amorphous silica transition zone, use SiH
4And NH
3As reacting gas, continue to utilize reactor one deck amorphous silicon nitride film of on the amorphous silica transition zone, growing, form silicon nitride and the compound double membrane structure of silicon dioxide;
4. after being cooled to room temperature, from reactor, take out stand-by.
3. the method for change film mechanics according to claim 1 and 2 and optical property is characterized in that, described substrate is monocrystalline silicon piece, SiO
2A kind of in/Si, polymer film, glass, pottery and the metal substrate.
4. the method for change film mechanics according to claim 2 and optical property is characterized in that, described reactor is plasma reinforced chemical vapor deposition system, low-pressure chemical vapor deposition system or high vacuum chemical gas-phase deposition system.
5. the method for change film mechanics according to claim 1 and 2 and optical property is characterized in that, the thickness of described amorphous silica transition zone is 50～1500nm.
6. the method for change film mechanics according to claim 1 and 2 and optical property is characterized in that, the thickness of described amorphous silicon nitride film is 50～1000nm.
7. the method for change film mechanics according to claim 2 and optical property is characterized in that, when using plasma strengthened chemical gas-phase deposition system, the growth temperature of amorphous silica transition zone and amorphous silicon nitride film was 150～400 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100508061A CN100561682C (en) | 2007-12-14 | 2007-12-14 | A kind of method that changes film mechanics and optical property |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100508061A CN100561682C (en) | 2007-12-14 | 2007-12-14 | A kind of method that changes film mechanics and optical property |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101197278A true CN101197278A (en) | 2008-06-11 |
| CN100561682C CN100561682C (en) | 2009-11-18 |
Family
ID=39547578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100508061A Expired - Fee Related CN100561682C (en) | 2007-12-14 | 2007-12-14 | A kind of method that changes film mechanics and optical property |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100561682C (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102584027A (en) * | 2012-01-09 | 2012-07-18 | 宁波永新光学股份有限公司 | Method for plating antireflection film on surface of optical glass tempered by chemical method |
| CN102610707A (en) * | 2011-01-24 | 2012-07-25 | 晶能光电（江西）有限公司 | Method for manufacturing semiconductor device for relieving stress of indium-gallium-aluminum-nitrogen thin film |
| CN103109352A (en) * | 2010-10-06 | 2013-05-15 | 应用材料公司 | Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application |
| CN107741407A (en) * | 2017-11-13 | 2018-02-27 | 华南理工大学 | A kind of fixture and method of testing based on small size thin-film material examination of infrared spectrum |
| CN108987250A (en) * | 2017-06-02 | 2018-12-11 | 上海新昇半导体科技有限公司 | Substrate and preparation method thereof |
| CN111747375A (en) * | 2020-07-08 | 2020-10-09 | 河南大学 | Method for regulating and controlling heterojunction electrical property and photoelectric output of p-Si/n-ZnO film |
| CN111863593A (en) * | 2019-04-30 | 2020-10-30 | 芯恩（青岛）集成电路有限公司 | Stress film with gradient distribution of chemical components, semiconductor device and forming method thereof |
| CN112490349A (en) * | 2020-11-26 | 2021-03-12 | 济南晶正电子科技有限公司 | Electro-optic crystal film, preparation method and electronic component |
| CN113223943A (en) * | 2020-01-21 | 2021-08-06 | 济南晶正电子科技有限公司 | Piezoelectric thin film composite substrate and preparation method thereof |
| CN115047549A (en) * | 2022-05-26 | 2022-09-13 | 麦斯塔微电子(深圳)有限公司 | Optical element |
| CN116155231A (en) * | 2023-02-28 | 2023-05-23 | 苏州敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
-
2007
- 2007-12-14 CN CNB2007100508061A patent/CN100561682C/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103109352A (en) * | 2010-10-06 | 2013-05-15 | 应用材料公司 | Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application |
| CN103109352B (en) * | 2010-10-06 | 2016-05-04 | 应用材料公司 | For PECVD oxide-nitride thing and oxide-silicon stack stack of 3D memory applications |
| CN102610707A (en) * | 2011-01-24 | 2012-07-25 | 晶能光电（江西）有限公司 | Method for manufacturing semiconductor device for relieving stress of indium-gallium-aluminum-nitrogen thin film |
| CN102584027A (en) * | 2012-01-09 | 2012-07-18 | 宁波永新光学股份有限公司 | Method for plating antireflection film on surface of optical glass tempered by chemical method |
| CN102584027B (en) * | 2012-01-09 | 2014-10-29 | 宁波永新光学股份有限公司 | Method for plating antireflection film on surface of optical glass tempered by chemical method |
| CN108987250A (en) * | 2017-06-02 | 2018-12-11 | 上海新昇半导体科技有限公司 | Substrate and preparation method thereof |
| CN107741407A (en) * | 2017-11-13 | 2018-02-27 | 华南理工大学 | A kind of fixture and method of testing based on small size thin-film material examination of infrared spectrum |
| CN111863593A (en) * | 2019-04-30 | 2020-10-30 | 芯恩（青岛）集成电路有限公司 | Stress film with gradient distribution of chemical components, semiconductor device and forming method thereof |
| CN111863593B (en) * | 2019-04-30 | 2023-03-14 | 芯恩（青岛）集成电路有限公司 | Stress film with gradient distribution of chemical components, semiconductor device and forming method thereof |
| CN113223943A (en) * | 2020-01-21 | 2021-08-06 | 济南晶正电子科技有限公司 | Piezoelectric thin film composite substrate and preparation method thereof |
| CN111747375A (en) * | 2020-07-08 | 2020-10-09 | 河南大学 | Method for regulating and controlling heterojunction electrical property and photoelectric output of p-Si/n-ZnO film |
| CN111747375B (en) * | 2020-07-08 | 2023-08-11 | 河南大学 | Method for regulating and controlling electrical property and photoelectric output of p-Si/n-ZnO thin film heterojunction |
| CN112490349A (en) * | 2020-11-26 | 2021-03-12 | 济南晶正电子科技有限公司 | Electro-optic crystal film, preparation method and electronic component |
| CN112490349B (en) * | 2020-11-26 | 2022-05-17 | 济南晶正电子科技有限公司 | Electro-optic crystal film, preparation method and electronic component |
| CN115047549A (en) * | 2022-05-26 | 2022-09-13 | 麦斯塔微电子(深圳)有限公司 | Optical element |
| CN116155231A (en) * | 2023-02-28 | 2023-05-23 | 苏州敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100561682C (en) | 2009-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100561682C (en) | A kind of method that changes film mechanics and optical property | |
| CN104498895B (en) | Ultrathin silicon oxynitride film material and preparation method and application thereof | |
| Iftiquar | The roles of deposition pressure and rf power in opto-electronic properties of a-SiO: H films | |
| Zhou et al. | Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition | |
| Mahajan et al. | Growth of SiO2 films by TEOS-PECVD system for microelectronics applications | |
| Samanta et al. | Microstructural association of diverse chemical constituents in nc-SiOx: H network synthesized by spontaneous low temperature plasma processing | |
| Samanta et al. | SiO x nanowires with intrinsic nC-Si quantum dots: The enhancement of the optical absorption and photoluminescence | |
| CN104532207B (en) | Silicon oxynitride membrane material as well as preparation method and use thereof | |
| KR20150055540A (en) | Gate insulating layer and method for forming the same | |
| Guo et al. | Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 C | |
| Ali | Origin of photoluminescence in nanocrystalline Si: H films | |
| Xiong et al. | Sin x films and membranes for photonic and mems applications | |
| Tajima et al. | Formation of nanoporous features, flat surfaces, or crystallographically oriented etched profiles by the Si chemical dry etching using the reaction of F2+ NO→ F+ FNO at an Elevated Temperature | |
| Amor et al. | Thermal post-deposition treatment effects on nanocrystalline hydrogenated silicon prepared by PECVD under different hydrogen flow rates | |
| Li et al. | Correlation study of microstructure and photoluminescence properties of aC: H thin films deposited by plasma-enhanced chemical vapor deposition technique | |
| US8524098B2 (en) | Method for forming nano size turf on transparent polymer films used in solar cells, and method for enhancing transmittance of transparent polymer films of solar cells | |
| CN107564800A (en) | A kind of preparation method of silicon nitride layer | |
| Sanchez et al. | Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition | |
| KR101272995B1 (en) | Method of graphene growing and graphene size adjusting | |
| CN107204285B (en) | The grid conducting layer of film, its forming method and its formation | |
| Zhang et al. | Influence of experiment parameters on the growth of cBN films by bias-assisted direct current jet plasma chemical vapor deposition | |
| JPH02382A (en) | Metallic substrate for solar cell, manufacture thereof and solar cell using said metallic substrate | |
| CN117439567A (en) | Heterogeneous substrate structure, preparation method thereof and surface acoustic wave device | |
| Syed et al. | Thin Film Deposition of PECVD Hydrogenated Nano-Crystalline Silicon (nc-Si: H) for Solar Cell Applications | |
| Gope et al. | Growth of nanocrystalline silicon films by VHF PECVD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091118 Termination date: 20121214 |