CN111747375B - Method for regulating and controlling electrical property and photoelectric output of p-Si/n-ZnO thin film heterojunction - Google Patents
Method for regulating and controlling electrical property and photoelectric output of p-Si/n-ZnO thin film heterojunction Download PDFInfo
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- G—PHYSICS
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- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
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- G—PHYSICS
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- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/264—Mechanical constructional elements therefor ; Mechanical adjustment thereof
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R29/22—Measuring piezoelectric properties
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Abstract
A method for regulating and controlling electrical property and photoelectric output of p-Si/n-ZnO film heterojunction relates to the field of semiconductor heterojunction devices, and comprises a cantilever type strain mechanism, wherein the strain mechanism comprises a clamping piece structure and a motion structure, the p-Si/n-ZnO film heterojunction device is used as a cantilever beam, the motion structure comprises a tablet press and a motion motor, the tablet press can move along with the motion motor, the motion motor can precisely control the motion distance and realize locking and positioning, the motion motor controls the tablet press to press down, so that bending of the cantilever beam is caused, and part of bending deformation of the cantilever beam can be equivalent to the thickness direction of the p-Si/n-ZnO film heterojunction device, so that longitudinal compressive strain is generated.
Description
Technical Field
The application relates to the field of semiconductor heterojunction devices, in particular to a method for regulating and controlling the electrical property and photoelectric output of a p-Si/n-ZnO thin film heterojunction.
Background
The semiconductor heterojunction device can be widely applied to the fields of electronic devices, photovoltaic cells, integrated circuits, detection sensing and the like, and has extremely wide application fields. Piezoelectronics and piezoelectronics are systematic theories developed in recent years for regulating and controlling the electronic and optoelectronic performances of heterojunction devices, and the electronic and optoelectronic performances of the heterojunction are changed by organically combining the semiconductor properties and the piezoelectric properties of the materials and utilizing piezoelectric polarization charges generated by piezoelectric effect to directionally regulate and control the generation, separation and transportation of electron-hole pairs at the heterojunction interface of the semiconductor and the behavior in the recombination process.
Currently, there are many examples of implementing specific schemes for improving specific heterojunction electronic performance and optoelectronic performance within the framework of piezoelectronics and piezoelectronics theory, such as a method for improving the photoelectric response of BFO/ZnO heterojunction devices
As described in (CN 110246958A), this case provides a specific solution for a ferroelectric thin film BFO/ZnO nanowire heterojunction device, and enhances the optoelectronic performance of the heterojunction device by applying a compressive strain in the vertical direction to the device, and by promoting the separation of carriers in the junction region of the BFO/ZnO heterojunction by the piezoelectric potential generated when the nanowire is strained.
Rigid, thin film, pn junction devices are an important class of heterojunction devices. The rigidity is mainly characterized in that the substrate has a smaller strain range compared with the flexible substrate, which means that the device can work in a small strain range, which can form complementation with a flexible substrate device with a larger strain range in general, and the practical application scene is increased; the thin film mainly describes the type of a junction material of the heterojunction device, and besides the thin film, the types such as nanowires and nanorods are optional, so that the thin film can be compatible with the existing micro-nano processing technology, and on the other hand, the thin film material with stronger integrity is beneficial to the accumulation of piezoelectric potential so that the device has better piezoelectronics and piezooptoelectronics; the pn junction type is selected relative to the Schottky junction type of the homonymous heterojunction, the junction effect of the pn junction type and the Schottky junction type are different, and the performance of the pn junction type and the Schottky junction type are obviously different in various aspects. In summary, the device of the rigid, thin film, pn junction type piezoelectronics and piezoelectronics has the characteristics of excellent performance, strong integrity, tight combination with the existing process, wide application scene and the like, and has wide research prospect and large application value.
Since no effective way has been found to apply a sufficiently large effective strain to rigid, thin-film, pn-junction devices, no cases have emerged in which implementations are implemented within the framework of piezoelectronics and piezoelectronics for regulating the electronic and optoelectronic properties of rigid, thin-film, pn-junction devices, according to the current state of the art.
Disclosure of Invention
In order to solve the problems in the prior art, the application provides a method for regulating and controlling the electrical property and photoelectric output of a p-Si/n-ZnO thin film heterojunction.
The technical proposal is as follows: the strain mechanism comprises a clamping piece structure and a motion structure, wherein the p-Si/n-ZnO film heterojunction device is used as the cantilever, the motion structure comprises a sheeter and a motion motor, the sheeter can move along with the motion motor, the motion motor can accurately control the motion distance and realize locking and positioning, the motion motor controls the sheeter to press downwards to bend the cantilever, bending deformation of the cantilever can be equivalent to part of the bending deformation in the thickness direction of the p-Si/n-ZnO film heterojunction device, longitudinal compressive strain is generated, and the equivalent deformation can also be changed along with the change of the stroke of the motion motor, wherein the bottommost layer of the p-Si/n-ZnO film heterojunction device is a p-type silicon substrate, and then the ZnO film layer and the ITO film electrode II which are parallel and not contacted with each other are also attached to one layer of ITO film electrode I above the ZnO film layer.
Preferably, the p-Si/n-ZnO thin film heterojunction device is tested by the following steps: fix the iron stand bench on optical platform, strain the mechanism and place on the iron stand bench, the laser instrument is placed at the electricity tester top, increases in the optical fiber exit of laser instrument and is equipped with the shutter in order to control the light path break-make fast, the shutter uses 3D to print the shell cladding of customization with the optical fiber exit and links to each other, the shutter carries out fixed stay through the iron stand bench.
Preferably, the p-type silicon substrate adopts a p-doped silicon wafer with the thickness of 10mm multiplied by 0.5mm, and is dried by a nitrogen gun after being ultrasonically cleaned by deionized water, acetone and ethanol for 30 minutes, and is used as a substrate for standby.
Preferably, the ZnO film layer, the ITO film electrode II and the ITO film electrode I are prepared by adopting a radio frequency magnetron sputtering mode.
Preferably, the preparation of the ZnO film layer: placing a p-type silicon substrate into a JGP-350B magnetron sputtering instrument vacuum cavity, wherein the target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, covering a mask plate with a corresponding pattern on the p-type silicon substrate, closing the cavity, and using a mechanical pump and a molecular pump to 4 multiplied by 10 -4 And (3) introducing argon and oxygen in a ratio of 40:2 after carrying out argon purging for 5 times under the background vacuum of Pa, keeping the pressure of the cavity at 2.2Pa during the process, rotating the revolution axis before the main sputtering starts to remove the sample table for 10min of pre-sputtering, and finally carrying out main sputtering for 15min, wherein the power of the pre-sputtering and the main sputtering is 80W, the substrate heating temperature is 500 ℃, and finally, taking out the p-type silicon substrate after natural annealing.
Preferably, the preparation of the ITO thin film electrode II and the ITO thin film electrode I: placing a p-type silicon substrate into a vacuum cavity of a JGP-350B magnetron sputtering instrument, wherein the target is an ITO ceramic target with the purity of 99.99% and the diameter of 6cm, sputtering temperature is room temperature, pure argon is introduced, the cavity pressure is kept at 2.2Pa, sputtering power is 50W, sputtering time is 10min, and finally, taking out the p-type silicon substrate after natural annealing.
The force and light composite detector is obtained by the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction.
The gate circuit is obtained by the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction.
The photovoltaic device is obtained by the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction.
The application has the beneficial effects that:
1. the application prepares a high-quality p-Si/n-ZnO thin film heterojunction device, and provides an electronic and optoelectronic performance scheme for regulating and controlling the p-Si/n-ZnO thin film heterojunction device in the frames of piezoelectronics and piezoelectronics, which widens the application range of piezoelectronics and piezoelectronics to a certain extent;
2. the gate circuit is a unit circuit for realizing basic logic operation and compound logic operation, and a typical scene in a piezoelectronics theory system is taken as the gate circuit;
3. the p-Si/n-ZnO device has obvious response to force and light, can be used as a novel force and light composite detector, and can be used for strain/stress detection and light detection by a single device;
4. the p-Si/n-ZnO device can be used as a photovoltaic device, the photovoltaic performance of the p-Si/n-ZnO device can be directionally improved by applying fixed strain to the p-Si/n-ZnO device by using a strain mechanism, the basic structure of the p-Si/n-ZnO device is not changed, and the p-Si/n-ZnO device can be suitable for any traditional application scene.
Drawings
Fig. 1: the application provides a strain mechanism schematic diagram based on a cantilever beam structure.
Fig. 2: the application provides a strain mechanism working schematic diagram based on a cantilever beam structure.
Fig. 3: the application provides a p-Si/n-ZnO thin film heterojunction device structure schematic diagram.
Fig. 4: the application provides a p-Si/n-ZnO thin film heterojunction device cross-section.
Fig. 5: XRD patterns of ZnO films are provided.
Fig. 6: the application provides a ZnO film scanning electron microscope photograph, wherein a: overlook, b: a cross section.
Fig. 7: the application provides a ZnO+ITO film scanning electron microscope photograph, wherein a: overlook, b: a cross section.
Fig. 8: the application provides a strain condition of a strain mechanism at a travel of 0.2mm of a motion motor.
Fig. 9: the application provides a motion motor stroke and device average working strain relation.
Fig. 10: the application provides a piezoelectric electronics/optoelectronics test platform schematic diagram.
Fig. 11: the present application provides a device IV curve that applies different strains in the dark state.
Fig. 12: the application provides a device IV curve for applying different strains under 405nm laser irradiation.
In the figure: 1-strain mechanism, 2-clamping piece structure, 3-motion structure, 4-p-Si/n-ZnO thin film heterojunction device, 5-p type silicon substrate, 6-ZnO thin film layer, 7-ITO thin film electrode II, 8-ITO thin film electrode I, 9-iron stand, 10-laser, 11-electrical tester and 12-shutter.
Detailed Description
For a better understanding of the present application, the following description will further illustrate the present application with reference to examples, but the present application is not limited to the following examples.
In a first embodiment, a method for regulating and controlling electrical performance and photoelectric output of a p-Si/n-ZnO thin film heterojunction is shown in fig. 1, and includes a cantilever type strain mechanism 1, where the strain mechanism 1 includes a clip structure 2 and a motion structure 3, the p-Si/n-ZnO thin film heterojunction device 4 is used as a cantilever beam, and the motion structure 3 includes a sheeter and a motion motor (which is drawn in the figure and is located at the top of the sheeter, and can control the sheeter to press down), where the sheeter is made by 3D printing and can move along with the motion motor, and the motion motor can precisely control a motion distance and realize locking positioning. As shown in fig. 2, the motion motor controls the tabletting device to press downwards, so that bending of the cantilever beam is caused, part of bending deformation of the cantilever beam is equivalent to the thickness direction of the p-Si/n-ZnO thin film heterojunction device 4, longitudinal compressive strain is caused, and the equivalent deformation is also changed along with the change of the stroke of the motion motor.
As shown in fig. 3 and 4, the bottom layer of the p-Si/n-ZnO thin film heterojunction device 4 is a p-type silicon substrate 5, next to that is a ZnO thin film layer 6 and an ITO thin film electrode II7 which are juxtaposed and not in contact with each other, and an ITO thin film electrode I8 is further attached above the ZnO thin film layer 6. Here, the ITO electrode is selected mainly in consideration of the effect that the introduction of the electrode can be reduced to a large extent for the p-Si/n-ZnO thin film heterojunction device 4 itself in view of its high light transmittance and lower resistivity.
The p-type silicon substrate 5 is a p-doped silicon wafer with the thickness of 10mm multiplied by 0.5mm, and is dried by a nitrogen gun after ultrasonic cleaning for 30 minutes by deionized water, acetone and ethanol in order to remove the influence of impurities possibly remained on the surface, and is used as a substrate for standby.
The ZnO film layer 6, the ITO film electrode II7 and the ITO film electrode I8 are all prepared by adopting a radio frequency magnetron sputtering mode, and the method has excellent process compatibility and is easy to form better contact, so that the performance of a heterojunction device can be improved.
Preparing a ZnO film layer 6: placing a p-type silicon substrate 5 into a JGP-350B type magnetron sputtering instrument vacuum cavity, wherein the target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, covering a mask plate with a corresponding pattern on the p-type silicon substrate 5, closing the cavity, and pumping to 4 multiplied by 10 by using a mechanical pump and a molecular pump -4 And (3) introducing argon and oxygen in a ratio of 40:2 after the background vacuum of Pa is subjected to argon purging for 5 times, keeping the pressure of the cavity at 2.2Pa during the process, rotating the revolution axis before the main sputtering starts to remove the sample table for 10min of pre-sputtering, and finally performing main sputtering for 15min, wherein the power of the pre-sputtering and the main sputtering is 80W, the substrate heating temperature is 500 ℃, and finally, taking out the p-type silicon substrate 5 after natural annealing. From previous studies, it was shown that the Si substrate selected here is less conductive due to thermal and electrical conductivity, which makes oxygen ions with low surface energy more easily adsorbed on the substrate. Thus an oxy-zinc-oxy-zinc type stack is achieved during sputtering with the c-axis oriented upward.
ITO film electrode II7 and ITO film electrode I8 are prepared: placing the p-type silicon substrate 5 into a vacuum cavity of a JGP-350B magnetron sputtering instrument, wherein the target material is an ITO ceramic target material with the purity of 99.99 percent and the diameter of 6cm, sputtering temperature is room temperature, pure argon is introduced, the cavity pressure is kept at 2.2Pa, sputtering power is 50W, sputtering time is 10min, and finally, taking out the p-type silicon substrate 5 after natural annealing.
Example two the p-Si/n-ZnO thin film heterojunction device 4 prepared in example one was analyzed.
To understand the impurity profile of the prepared ZnO thin film layer 6, we performed X-ray diffraction (XRD) tests (XRD instrument model used herein is Bruker D8 Advance, germany) on the p-Si/n-ZnO thin film heterojunction device 4, and as a result, as shown in fig. 5, the main known diffraction peaks are marked for convenience of discussion. It can be seen that the main diffraction peaks are the (002) crystal face peak of ZnO wurtzite structure and the (400) crystal face peak of Si, and the reason for introducing the Si diffraction peak is mainly the Si substrate selected in the experiment, which shows that the purity of the prepared ZnO film is very high. The full width at half maximum of the ZnO (002) peak is 0.289, which shows that the ZnO film has obvious orientation in the growth process to a certain extent. As for the ZnO (004) higher diffraction peak, it is also shown that the overall intensity is weaker. Meanwhile, small diffraction peaks exist near the main peaks of ZnO and Si, wherein the vicinity of ZnO (002) is mainly caused by unbalanced growth of ZnO films, and the diffraction peak near 60 degrees is presumed to be caused by p-doping of Si.
Regarding the structural characterization of the ZnO film 6, fig. 6 is a photograph under a Scanning Electron Microscope (SEM) (here, SEM model is geoscreen 500 of Carl Zeiss company, germany), the ZnO film prepared by us has a thickness of 426.5nm, and is mainly composed of a large number of vertically arranged prismatic ZnO nano-grains densely packed, and it can be seen that there is a certain deflection in the c-axis orientation of a small portion of the grains, which is consistent with the results given by XRD. The whole film has excellent surface flatness in a large range, and the flat and compact ZnO film layer morphology is beneficial to bearing larger strain, and meanwhile, the light capturing capability of the device can be increased. In addition, it is noted that the contact between the ZnO film and the Si substrate is good, and no gap exists, which is beneficial to improving the semi-conductive electronic and optoelectronic properties of the device.
To characterize the ITO thin film electrode layer itself and the contact with the ZnO thin film layer 6, we also took SEM photographs of the ZnO thin film with the ITO electrode layer attached, as shown in fig. 7. It can be seen that the thickness of the ITO layer is 178.6nm, the overall appearance is smooth and compact, the ITO layer is very similar to a ZnO film, and the junction of the ITO layer and the ZnO film is continuous and compact without obvious boundary, so that the internal resistance of the device can be reduced.
Example three, the possibility of the above example was demonstrated by COMSOL solid mechanics finite element analysis, and the relationship between the above structure operating state and the device strain amount was quantitatively described.
First, a limit stroke of 0.2mm is defined for the motion motor to consider that the strain mechanism can apply limit strain capacity, limit tests have been performed before using p-Si sheet substrates of the same specification, and the zz component of the strain tensor of the p-Si/n-ZnO thin film heterojunction device 4 is plotted as epsilon-zz for the maximum motion motor stroke of 0.2mm to ensure that the substrates are not broken, as shown in fig. 8. It can be seen that under the extreme pressure, the maximum longitudinal compressive strain of the test device reaches-0.07%, and the minimum compressive strain is close to 0%, so that the strain requirement of the p-Si/n-ZnO thin film heterojunction device 4 can be well met. Macroscopically, the strain of the p-Si/n-ZnO thin film heterojunction device 4 is mainly distributed on the clip mechanism side, and decreases toward the sheeter side. Furthermore, for convenience of quantitative expression, it is necessary to establish a correspondence between the travel of the motion motor and the strain applied by the strain mechanism to the p-Si/n-ZnO thin film heterojunction device 4, and for this purpose, parametric scan simulation is performed on the strain mechanism by using COMSOL software, wherein the scan parameter is the travel of the motion motor, the scan range is set to 0mm to 0.2mm, and the scan interval is set to 0.001mm. Because the strains of the portions of the p-Si/n-ZnO thin film heterojunction device 4 are not the same, we need to define a uniform average operating compressive strain for the p-Si/n-ZnO thin film heterojunction device 4, i.e., an average compressive strain in the active region (where the active region refers to the ITO thin film electrode I coverage region), for convenience of presentation and subsequent discussion, which has the advantage of avoiding to some extent the excessive effects of non-active region strains and abnormal data points that may occur in the finite element processing. Based on the above description, we plot the motion motor stroke (Mx) versus the mean operating compressive strain (epsilon) of the device, aided by the device strain map at part of the stroke, as shown in fig. 9. It can be seen that the average working strain of the device has a better linear relation with the travel of the motion motor, and a functional relation between the average working strain and the travel of the motion motor is given by linear fitting:
ε (Mx) = -0.0033Mx wherein Mx has units of mm and ε has no units, andthe coefficient of determination of the fitting function (R 2 ) 1.
In the fourth embodiment, the quantitative investigation of the working effect of the p-Si/n-ZnO thin film heterojunction device is carried out, and the related test is as follows:
the piezoelectronics and piezoelectronics test requires coupling of force, light and electricity, and a laser and an electric tester are added on a test platform. The specific construction scheme is shown in fig. 10, a iron frame table 9 is fixed on an optical platform, a strain mechanism 1 is placed on the iron frame table 9, a laser 10 is placed at the top of an electrical tester 11, the electrical tester is a Keithley2400 which can provide a plurality of test modes such as IV curve scanning, current testing and constant voltage output current testing, the laser is a power adjustable laser with 405nm wavelength, a shutter 12 is additionally arranged at an optical fiber outlet of the laser 10 to rapidly control the on-off of an optical path, the shutter 12 is connected with the optical fiber outlet by using a shell coating customized by 3D printing, and the shutter 12 is fixedly supported through the iron frame table 9.
The motion motor, the shutter 12, and the Keithley2400 are all connected to a computer programmable controller, wherein the specific operations of the computer controlled motion motor, the shutter 12, and the Keithley2400 are the prior art, and are not described in detail herein.
And verifying the piezoelectric electronic behavior of the device by means of the built test platform. For different compressive strains applied to the p-Si/n-ZnO thin film heterojunction device by means of the strain mechanism, the electrical tester is used for scanning voltages applied to the device in sequence to obtain IV curves of the device, and the IV curves under different conditions are summarized and drawn as shown in figure 11. It can be seen that as the voltage strain is continuously increased, the IV curves of the p-Si/n-ZnO thin film heterojunction devices are respectively lifted up in the positive bias region and deflected down in the negative bias region. From the current level, the current level enhancement at positive bias is significantly greater than that at negative bias for the same applied voltage. For example, with a compressive strain of-0.056% applied to the device, the current strength at-1.5V bias increases from 13.40 μA to 21.32 μA by 59.10%; while the current intensity at +1.5V bias increased from 16.42. Mu.A to 64.07. Mu.A by 290.19%. The test results show that the electronic performance of the device can be obviously changed by applying strain, which is the basic idea of piezoelectric electronics, and the existence of piezoelectric electronics effect in the p-Si/n-ZnO thin film heterojunction is proved, and meanwhile, the device has excellent current lifting performance in the test, and further has the potential of being used as a high-performance gate circuit.
On the basis of piezoelectric electronic test, 405nm laser irradiation is added to explore the piezoelectric electronic performance of the device. We plotted the IV curve of the device under 405nm laser irradiation at different strains as shown in fig. 12. It can be seen that as the external applied strain increases, the IV curve curves downward on the negative bias side and near no bias, and upward on the positive bias side. Wherein the increase in current intensity caused by the compressively strained device upon application of a negative bias is significantly greater than that of a positive bias, which is contrary to the trend of change in the dark state (piezoelectronics). For example, with a compressive strain of-0.056% applied to the device, the current strength at-1V bias increases from 32.36 μA to 148.70 μA by 359.52%; the current intensity in the absence of bias increases from 0.27 μA to 0.64 μA by 137.04%; while the current intensity at +1v bias increased from 8.31 μa to 13.57 μa by 63.30%. By quantitatively giving the influence of the compressive strain on the current intensity of the device under +1V, -1V and no bias, whether the bias exists or not can be seen, and the optoelectronic performance of the device can be greatly improved by applying the compressive strain.
In summary, the application prepares a high-quality p-Si/n-ZnO thin film heterojunction device, and provides an electronic and optoelectronic performance scheme for regulating the p-Si/n-ZnO thin film heterojunction device in the frames of piezoelectronics and piezoelectronics, which widens the application range of piezoelectronics and piezoelectronics to a certain extent.
The foregoing is only a preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art should be able to apply equivalents and modifications according to the technical scheme and the inventive concept thereof within the scope of the present application.
Claims (8)
1. A method for regulating and controlling the electrical property and photoelectric output of a p-Si/n-ZnO film heterojunction, which is characterized by comprising a cantilever type strain mechanism (1), wherein the strain mechanism (1) comprises a clamping piece structure (2) and a motion structure (3), a p-Si/n-ZnO film heterojunction device (4) is used as a cantilever beam, the motion structure (3) comprises a sheeter and a motion motor, the sheeter can move along with the motion motor, the motion motor can precisely control the motion distance and realize locking and positioning, the motion motor controls the sheeter to press down so as to cause bending of the cantilever beam, part of bending deformation of the cantilever beam is equivalent to the thickness direction of the p-Si/n-ZnO film heterojunction device (4), so that longitudinal compressive strain is generated, and the equivalent deformation is also changed along with the change of the stroke of the motion motor, wherein the bottommost layer of the p-Si/n-ZnO film heterojunction device (4) is a p-type silicon substrate (5), a parallel film layer (6) and an ITO film electrode (7) are attached to a film electrode (8) on the film electrode (8);
the p-Si/n-ZnO thin film heterojunction device (4) is tested, and the process is as follows: fix iron stand (9) on optical platform, strain mechanism (1) place on iron stand (9), laser instrument (10) are placed at electrical tester (11) top, increase in the optical fiber exit of laser instrument (10) and are equipped with shutter (12) in order to control the light path break-make fast, shutter (12) link to each other with the shell cladding that the optical fiber export used 3D to print the customization, shutter (12) carry out fixed stay through iron stand (9).
2. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction according to claim 1, wherein the p-type silicon substrate (5) is a p-doped silicon wafer with the thickness of 10mm multiplied by 0.5mm, and is dried by a nitrogen gun after being ultrasonically cleaned for 30 minutes by deionized water, acetone and ethanol, and is used as a substrate for standby.
3. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction according to claim 2, wherein the ZnO thin film layer (6), the ITO thin film electrode II (7) and the ITO thin film electrode I (8) are prepared by adopting a radio frequency magnetron sputtering mode.
4. A method for regulating electrical properties and photovoltaic output of p-Si/n-ZnO thin film heterojunction according to claim 3, characterized in that the ZnO thin film layer (6) is prepared: placing a p-type silicon substrate (5) into a JGP-350B magnetron sputtering instrument vacuum cavity, wherein the target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, closing the cavity after covering a mask plate with a corresponding pattern on the p-type silicon substrate (5), and pumping to 4 multiplied by 10 by using a mechanical pump and a molecular pump -4 And (3) introducing argon and oxygen in a ratio of 40:2 after carrying out argon purging for 5 times under the background vacuum of Pa, keeping the pressure of the cavity at 2.2Pa during the process, rotating the revolution axis before the main sputtering starts to remove the sample table for 10min of pre-sputtering, and then carrying out main sputtering for 15min, wherein the power of the pre-sputtering and the main sputtering is 80W, the substrate heating temperature is 500 ℃, and finally, taking out the p-type silicon substrate (5) after natural annealing.
5. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction according to claim 4, wherein the ITO thin film electrode II (7) and the ITO thin film electrode I (8) are prepared by the following steps: and (3) placing the p-type silicon substrate (5) into a vacuum cavity of a JGP-350B magnetron sputtering instrument, wherein the target is an ITO ceramic target with the purity of 99.99% and the diameter of 6cm, sputtering temperature is room temperature, pure argon is introduced, the cavity pressure is kept at 2.2Pa, sputtering power is 50W, sputtering time is 10min, and finally, the p-type silicon substrate (5) is taken out after natural annealing.
6. A force and light combined detector obtained by the method for regulating and controlling the electrical property and photoelectric output of the p-Si/n-ZnO thin film heterojunction according to any one of claims 1 to 5.
7. A gate circuit obtained by the method for regulating and controlling the electrical properties and photoelectric output of a p-Si/n-ZnO thin film heterojunction according to any one of claims 1 to 5.
8. A photovoltaic device obtained by the method for controlling electrical properties and photoelectric output of a p-Si/n-ZnO thin film heterojunction according to any one of claims 1 to 5.
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