CN111747375A - Method for regulating and controlling heterojunction electrical property and photoelectric output of p-Si/n-ZnO film - Google Patents
Method for regulating and controlling heterojunction electrical property and photoelectric output of p-Si/n-ZnO film Download PDFInfo
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- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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Abstract
A method for regulating and controlling the electrical property and photoelectric output of p-Si/n-ZnO film heterojunction device relates to the field of semiconductor heterojunction devices and comprises a cantilever beam type strain mechanism, wherein the strain mechanism comprises a clamping piece structure and a motion structure, the p-Si/n-ZnO film heterojunction device is used as a cantilever beam, the motion structure comprises a tabletting device and a motion motor, the tabletting device can move along with the motion motor, the motion motor can accurately control the motion distance and realize locking and positioning, the motion motor controls the tabletting device to press down to cause the bending of the cantilever beam, the bending deformation of the cantilever beam can be equivalent to one part in the thickness direction of the p-Si/n-ZnO film heterojunction device, so as to cause the generation of longitudinal compressive strain, and along with the change of the stroke of the motion motor, the invention prepares a high-quality p-Si/n-ZnO film heterojunction device, and provides a scheme for regulating and controlling the electronic and optoelectronic properties of the device in the framework of the piezoelectric electronics and the piezoelectric optoelectronics, which widens the application range of the piezoelectric electronics and the piezoelectric optoelectronics to a certain extent.
Description
Technical Field
The invention relates to the field of semiconductor heterojunction devices, in particular to a method for regulating and controlling the electrical property and photoelectric output of a p-Si/n-ZnO thin film heterojunction.
Background
The semiconductor heterojunction device can be widely applied to the fields of electronic devices, photovoltaic cells, integrated circuits, detection sensing and the like, and has wide application scenes. The piezoelectric electronics and the piezoelectric optoelectronics are systematic theories developed in recent years for regulating and controlling the electronic and optoelectronics performances of heterojunction devices, semiconductor properties and piezoelectric properties of materials are organically combined, and piezoelectric polarization charges generated by a piezoelectric effect are utilized to directionally regulate and control the generation, separation, transportation and behaviors in the compounding process of electron-hole pairs at the heterojunction interfaces of semiconductors, so that the electronic and optoelectronics performances of the heterojunction are changed.
Currently, in the theoretical framework of piezoelectric electronics and piezoelectric optoelectronics, there are many examples of specific schemes for improving the specific heterojunction electronic performance and the specific optoelectronics performance, such as "a method for improving the photoelectric response of a BFO/ZnO heterojunction device"
(CN110246958A), this case provides a specific solution for a ferroelectric thin film BFO/ZnO nanowire heterojunction device, which applies a compressive strain in the vertical direction to the device, and promotes the separation of carriers in the junction region of the BFO/ZnO heterojunction device by the piezoelectric potential generated when the nanowire is strained, thereby enhancing the photoelectric performance of the heterojunction device.
Rigid, thin film, pn junction devices are an important class of heterojunction devices. The rigidity mainly describes the characteristics of the substrate, compared with a flexible substrate, the rigid substrate has a smaller strain range, which means that the device can work in a small strain range, and the device can be complementary with a flexible substrate device with a larger strain range, so that the practical application scene is increased; the film mainly describes the type of a junction forming material of the heterojunction device, and the types of nanowires, nanorods and the like are optional besides the film, so that the introduction of the film can be compatible with the existing micro-nano processing technology, and the film material with stronger integrity is helpful for the accumulation of piezoelectric potential, so that the device has better piezoelectric electronics and piezoelectric photoelectron performance; the selection of the pn junction type is relative to the Schottky junction type of the same heterojunction, the junction forming effect of the pn junction type and the Schottky junction type is different, and the performances are obviously different in various aspects. In summary, the rigid, thin-film, pn junction type piezoelectric electronics and piezoelectric optoelectronics devices have the characteristics of excellent performance, strong integrity, close combination with the existing process, wide application scenes and the like, and have wide research prospects and higher application values.
Because no effective way for applying enough effective strain to rigid, thin-film, pn junction devices has been found, no cases have appeared for regulating the electronic and optoelectronic properties of rigid, thin-film, pn junction devices in the framework of piezoelectric electronics and piezoelectric optoelectronics, according to the description of the application data available at present.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method for regulating and controlling the electrical property and the photoelectric output of a p-Si/n-ZnO film heterojunction.
The technical scheme is as follows: the device comprises a cantilever beam type strain mechanism, the strain mechanism comprises a clamping piece structure and a motion structure, a p-Si/n-ZnO film heterojunction device is used as a cantilever beam, the motion structure comprises a tabletting device and a motion motor, the tabletting device can move along with the motion motor, the motion motor can accurately control the motion distance and realize locking and positioning, the motion motor controls the tabletting device to press downwards to cause the bending of the cantilever beam, the bending deformation of the cantilever beam can be equivalent to one part in the thickness direction of the p-Si/n-ZnO film heterojunction device, so that the longitudinal compressive strain is generated, the equivalent deformation can also be changed along with the change of the stroke of the motion motor, wherein the bottommost layer of the p-Si/n-ZnO film heterojunction device is a p-type silicon substrate, and then a ZnO film layer and an ITO film electrode II which are parallel and are not in contact with each other, and an ITO thin film electrode I is also attached above the ZnO thin film layer.
Preferably, the p-Si/n-ZnO thin film heterojunction device is tested by the following process: the optical fiber laser device comprises an iron stand, a strain mechanism, a laser, a shutter, a shell and a support, wherein the iron stand is fixed on an optical platform, the strain mechanism is arranged on the iron stand, the laser is arranged at the top of an electrical tester, the shutter is additionally arranged at an optical fiber outlet of the laser to rapidly control the on-off of an optical path, the shutter is connected with the optical fiber outlet in a covering mode through 3D printing, and the shutter is fixedly supported through the iron stand.
Preferably, the p-type silicon substrate is a 10mm × 10mm × 0.5mm p-doped silicon wafer, and is ultrasonically cleaned by deionized water, acetone and ethanol for 30 minutes and then dried by using a nitrogen gun to serve as the substrate for later use.
Preferably, the ZnO film layer, the ITO film electrode II and the ITO film electrode I are all prepared in a radio frequency magnetron sputtering mode.
Preferably, the preparation of the ZnO film layer comprises the steps of putting a p-type silicon substrate into a JGP-350B magnetron sputtering instrument vacuum cavity, wherein the target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, closing the cavity and pumping the ZnO ceramic to 4 × 10 by using a mechanical pump and a molecular pump after covering a mask plate with a corresponding pattern on the p-type silicon substrate-4And (3) carrying out background vacuum of Pa, introducing argon and oxygen according to the proportion of 40:2 after 5 times of argon gas scrubbing, keeping the air pressure of the cavity stable at 2.2Pa, rotating a revolution shaft to move a sample table away before formal sputtering is started so as to carry out pre-sputtering for 10min, then formally sputtering for 15min, wherein the pre-sputtering power and the formal sputtering power are both 80W, the substrate heating temperature is 500 ℃, and finally, naturally annealing the p-type silicon substrate and taking out.
Preferably, the preparation of the ITO thin film electrode II and the ITO thin film electrode I: putting a p-type silicon substrate into a vacuum cavity of a JGP-350B type magnetron sputtering instrument, wherein the target material is an ITO ceramic target material with the purity of 99.99 percent and the diameter of 6cm, the sputtering temperature is room temperature, introducing pure argon, keeping the cavity pressure at 2.2Pa, the sputtering power at 50W and the sputtering time duration at 10min, and finally, naturally annealing the p-type silicon substrate and taking out.
The force and light composite detector is obtained by utilizing the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction.
The gate circuit is obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction.
The photovoltaic device is obtained by utilizing the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction.
The invention has the beneficial effects that:
1. the invention prepares a high-quality p-Si/n-ZnO film heterojunction device, and provides a scheme for regulating and controlling the electronic and optoelectronic properties of the p-Si/n-ZnO film heterojunction device in the framework of piezoelectric electronics and piezoelectric optoelectronics, thereby widening the application range of the piezoelectric electronics and the piezoelectric optoelectronics to a certain extent;
2. the gate circuit is a unit circuit for realizing basic logic operation and composite logic operation, and a typical scene in a piezoelectric electronics theory system is the gate circuit;
3. the p-Si/n-ZnO device has obvious response to force and light at the same time, can be used as a novel force and light composite detector, and a single device can carry out strain/stress detection and light detection;
4. the p-Si/n-ZnO device can be used as a photovoltaic device, the photovoltaic performance of the device can be directionally improved by applying fixed strain to the device by using the strain mechanism, the basic structure of the device is not changed, and the device can be suitable for any traditional application scene.
Drawings
FIG. 1: the invention provides a schematic diagram of a strain mechanism based on a cantilever beam structure.
FIG. 2: the invention provides a working schematic diagram of a strain mechanism based on a cantilever beam structure.
FIG. 3: the invention provides a structural schematic diagram of a p-Si/n-ZnO thin film heterojunction device.
FIG. 4: the invention provides a cross-sectional view of a p-Si/n-ZnO thin film heterojunction device.
FIG. 5: the invention provides an XRD test pattern of a ZnO film.
FIG. 6: the invention provides a ZnO film scanning electron microscope photo, wherein a: plan view, b: cross section.
FIG. 7: the invention provides a ZnO + ITO film scanning electron microscope photo, wherein a: plan view, b: cross section.
FIG. 8: the invention provides the strain condition of a strain mechanism when the stroke of a motion motor is 0.2 mm.
FIG. 9: the invention provides a relation between the stroke of a motion motor and the average working strain of a device.
FIG. 10: the invention provides a schematic diagram of a piezoelectric electronics/optoelectronics test platform.
FIG. 11: the invention provides a device IV curve for applying different strains in the dark state.
FIG. 12: the invention provides a device IV curve for applying different strains under 405nm laser irradiation.
In the figure: the device comprises a 1-strain mechanism, a 2-clamping piece structure, a 3-motion structure, a 4-p-Si/n-ZnO thin film heterojunction device, a 5-p type silicon substrate, a 6-ZnO thin film layer, a 7-ITO thin film electrode II, an 8-ITO thin film electrode I, a 9-iron stand, a 10-laser, a 11-electrical tester and a 12-shutter.
Detailed Description
In order to better understand the invention, the following description of the implementation of the example further illustrate the content of the invention, but the content of the invention is not limited to the following embodiments.
In a first embodiment, a method for adjusting and controlling electrical properties and photoelectric output of a p-Si/n-ZnO thin film heterojunction is disclosed, as shown in fig. 1, the method includes a cantilever-type strain mechanism 1, the strain mechanism 1 includes a clip structure 2 and a moving structure 3, the p-Si/n-ZnO thin film heterojunction device 4 serves as a cantilever, the moving structure 3 includes a wafer presser and a moving motor (shown in the figure, located at the top of the wafer presser, and capable of controlling the wafer presser to press down), wherein the wafer presser is made by 3D printing and is movable along with the moving motor, and the moving motor can precisely control a moving distance and achieve locking and positioning. As shown in fig. 2, the movement motor controls the wafer presser to press down, so as to cause the bending of the cantilever, the bending deformation of the cantilever is equivalent to a part in the thickness direction of the p-Si/n-ZnO thin film heterojunction device 4, so as to cause the generation of longitudinal compressive strain, and the equivalent deformation is also changed along with the change of the movement motor stroke.
As shown in FIGS. 3 and 4, the bottom layer of the p-Si/n-ZnO thin film heterojunction device 4 is a p-type silicon substrate 5, and then a ZnO thin film layer 6 and an ITO thin film electrode II7 which are parallel and not in contact with each other are arranged, and an ITO thin film electrode I8 is further attached above the ZnO thin film layer 6. Here, the ITO electrode is selected mainly in consideration of the effect of the introduction of the electrode on the p-Si/n-ZnO thin film heterojunction device 4 itself, which can be greatly reduced by its high light transmittance and lower resistivity.
The p-type silicon substrate 5 is a p-doped silicon wafer with the thickness of 10mm multiplied by 0.5mm, and is ultrasonically cleaned by deionized water, acetone and ethanol for 30 minutes and then dried by a nitrogen gun to be used as a substrate for standby after the influence of impurities possibly remained on the surface is removed.
The ZnO film layer 6, the ITO film electrode II7 and the ITO film electrode I8 are all prepared in a radio frequency magnetron sputtering mode, have excellent process compatibility, are easy to form better contact, and are beneficial to improving the performance of heterojunction devices.
Preparing a ZnO film layer 6 by putting a p-type silicon substrate 5 into a vacuum cavity of a JGP-350B magnetron sputtering instrument, wherein a target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, closing the cavity and pumping the P-type silicon substrate 5 to 4 × 10 by using a mechanical pump and a molecular pump after covering a mask plate with a corresponding pattern on the P-type silicon substrate 5-4Introducing argon and oxygen according to the ratio of 40:2 after 5 times of argon gas scrubbing for Pa, keeping the pressure of the cavity to be stable at 2.2Pa, rotating a revolution shaft to move a sample table away before formal sputtering is started to perform pre-sputtering for 10min, and then formally sputtering for 15min, wherein the pre-sputtering power and the formal sputtering power are both 80W, the substrate heating temperature is 500 ℃, and finally, self-starting the p-type silicon substrate 5Then taking out after annealing. According to previous studies, it was shown that the Si substrate selected here is more prone to adsorption of oxygen ions with low surface energy on the substrate due to lower thermal and electrical conductivity. Thus, during sputtering, an oxy-zinc-oxy-zinc stack is achieved with the c-axis orientation facing upwards.
Preparing an ITO film electrode II7 and an ITO film electrode I8: putting the p-type silicon substrate 5 into a vacuum cavity of a JGP-350B type magnetron sputtering instrument, wherein the target material is an ITO ceramic target material with the purity of 99.99 percent and the diameter of 6cm, the sputtering temperature is room temperature, introducing pure argon, keeping the cavity pressure at 2.2Pa, the sputtering power at 50W, and the sputtering time duration at 10min, and finally, naturally annealing the p-type silicon substrate 5 and taking out.
Example two, the p-Si/n-ZnO thin film heterojunction device 4 prepared in example one was analyzed.
In order to understand the impurity profile of the prepared ZnO thin film layer 6, we performed X-ray diffraction (XRD) tests on the p-Si/n-ZnO thin film heterojunction device 4 (the XRD instrument model used herein is Bruker D8 Advance, Germany) and the results are shown in FIG. 5, where the main known diffraction peaks are indicated for the convenience of discussion. It can be seen that the main diffraction peaks are (002) crystal plane peak of ZnO wurtzite structure and (400) crystal plane peak of Si, and the reason for introducing the Si diffraction peak is mainly the Si substrate selected in the experiment, which shows that the prepared ZnO film has high purity. The full width at half maximum of the ZnO (002) peak was 0.289, which indicates to some extent that the ZnO film had a significant orientation during growth. The higher diffraction peak of ZnO (004) is also shown, but the overall intensity is weak. Meanwhile, smaller diffraction peaks exist near main peaks of ZnO and Si, wherein the vicinity of ZnO (002) is mainly caused by unbalanced growth of a ZnO film, and the diffraction peak near 60 degrees is presumed to be caused by p doping of Si.
Regarding the structural characterization of the ZnO thin film layer 6, fig. 6 is a Scanning Electron Microscope (SEM) photograph thereof (here, SEM model is geminiem 500 of Carl Zeiss, germany), the ZnO thin film we prepared has a thickness of 426.5nm, is mainly composed of a dense packing of a large number of vertically arranged prismatic ZnO nano-crystalline grains, and it can be seen that a small portion of the grains have a certain deflection in c-axis orientation, which is consistent with the results given by XRD. The whole film has excellent surface flatness in a large range, and the flat and compact ZnO film layer is beneficial to bearing larger strain, and meanwhile, the light capture capability of the device can be improved. In addition, the ZnO film is in good contact with the Si substrate, and no gap exists, so that the semiconducting electronic and optoelectronic properties of the device can be improved.
In order to characterize the ITO thin film electrode layer itself and the contact with the ZnO thin film layer 6, we also taken SEM photographs of the ZnO thin film with the ITO electrode layer attached, as shown in fig. 7. As can be seen, the thickness of the ITO layer is 178.6nm, the integral appearance is flat and compact, the ITO layer is very similar to a ZnO film, the junction of the ITO layer and the ZnO film is continuous and compact, and no obvious boundary exists, so that the ITO layer is beneficial to reducing the internal resistance of a device.
Third, the possibility of the third embodiment is proved through COMSOL solid mechanics finite element analysis, and the relation between the structure working state and the device strain quantity is quantitatively described.
Firstly, a limit stroke of 0.2mm is defined for a motion motor to consider the limit strain capacity which can be applied by the strain mechanism, a limit test is carried out by using a p-Si sheet substrate with the same specification, 0.2mm is the maximum motion motor stroke for ensuring that the substrate does not break, and the zz component of the strain tensor of the p-Si/n-ZnO thin film heterojunction device 4 is drawn by _ zz, as shown in FIG. 8. It can be seen that under the limit pressure, the maximum longitudinal compressive strain of the testing device reaches-0.07%, and the minimum compressive strain is close to 0%, so that the strain requirement of the p-Si/n-ZnO thin film heterojunction device 4 can be well met. Macroscopically, the strain of the p-Si/n-ZnO thin film heterojunction device 4 is mainly distributed on one side of the clamping mechanism and gradually decreases towards the side of the tabletting machine. Furthermore, for quantitative representation, it is necessary to establish a correspondence relationship between the stroke of the motion motor and the magnitude of the strain applied by the strain mechanism to the p-Si/n-ZnO thin film heterojunction device 4, and for this purpose, parametric scan simulation was performed on the strain mechanism using cmos software, in which the scan parameter is the stroke of the motion motor, the scan range is set to 0mm to 0.2mm, and the scan interval is set to 0.001 mm. Because the strain of each part of the p-Si/n-ZnO thin film heterojunction device 4 is different, for convenience of representing the result and subsequent discussion, it is necessary to define a uniform average working compressive strain for the p-Si/n-ZnO thin film heterojunction device 4, that is, an average compressive strain in an effective working area (wherein the effective working area refers to an ITO thin film electrode I coverage area), so that the selection has an advantage of avoiding the strain in the ineffective working area and an excessive influence of abnormal data points which may occur in finite element processing to a certain extent. Based on the above description, we plot the relationship between the stroke (Mx) of the moving motor and the average operating pressure strain () of the device, and supplement it with the strain diagram of the device under partial stroke, as shown in fig. 9. It can be seen that the average working strain of the device and the stroke of the moving motor form a better linear relation, and a functional relation between the average working strain and the stroke of the moving motor is given through linear fitting:
(Mx) — 0.0033Mx where Mx has a unit of mm, no unit, and a coefficient of certainty (R) of the fitting function2) Is 1.
Example four, the quantitative research of the working effect of the p-Si/n-ZnO thin film heterojunction device, and the related tests are as follows:
the test of the piezoelectric electronics and the piezoelectric optoelectronics requires the coupling of force, light and electricity, and a laser and an electrical tester are considered to be additionally arranged on a test platform. Its concrete scheme of putting up is shown in fig. 10, fix iron stand platform 9 on optical platform, strain mechanism 1 places on iron stand platform 9, laser instrument 10 places at 11 tops of electricity tester, the electricity tester chooses for use Keithley2400, can provide a plurality of test modes such as IV curve scanning, current test, constant voltage output current test, the laser instrument chooses for use the power adjustable laser instrument of 405nm wavelength, the optical fiber exit of laser instrument 10 has increased shutter 12 with the quick control light path break-make, shutter 12 and the optical fiber exit use 3D to print the shell cladding of ordering and link to each other, shutter 12 carries out fixed stay through iron stand platform 9.
The motion motor, the shutter 12 and the Keithley2400 are all connected with a computer for programmable control, wherein the specific operation of controlling the motion motor, the shutter 12 and the Keithley2400 by the computer is the prior art, and is not described in more detail in the present application.
And verifying the piezoelectric electronic behavior of the device by the aid of the built test platform. Aiming at different compressive strains applied to the p-Si/n-ZnO thin film heterojunction device by the strain mechanism, the device is scanned by sequentially applying voltages through an electrical tester to obtain an IV curve of the device, and the IV curves under different conditions are summarized and drawn as shown in FIG. 11. It can be seen that as the compressive strain is continuously increased, the IV curves of the p-Si/n-ZnO thin film heterojunction devices are respectively raised in the positively biased region and deflected downward in the negatively biased region. From the current intensity, the current intensity enhancement under the positive bias is obviously larger than that under the negative bias under the same applied voltage. For example, in the case of applying a compressive strain of-0.056% to the device, the current strength at a bias of-1.5V increased from 13.40 μ A to 21.32 μ A, an increase of 59.10%; while the current intensity at bias +1.5V increased from 16.42 mua to 64.07 mua, an increase of 290.19%. The test result shows that the electronic performance of the device can be obviously changed by applying strain, which is the basic idea of piezoelectric electronics, and proves that the piezoelectric electronic effect exists in the p-Si/n-ZnO thin film heterojunction, and meanwhile, the device shows excellent current boosting performance in the test and further shows the potential of the device used as a high-performance gate circuit.
On the basis of piezoelectric electronics test, 405nm laser irradiation is added to probe the piezoelectric electronics performance of the device. We plot the IV curves of the devices under different strains under 405nm laser irradiation as shown in fig. 12. It can be seen that as the externally applied strain continues to rise, the IV curve bends downward on the negatively biased side and near unbiased, and upward on the positively biased side. The increase in current intensity caused by the compressive strain device when a negative bias is applied is significantly greater than that caused by the positive bias, which is contrary to the trend of change in the dark state (piezo-electronics). For example, in the case of applying a compressive strain of-0.056% to the device, the current strength at-1V bias increased from 32.36 μ A to 148.70 μ A, an increase of 359.52%; the current intensity in the non-bias state is increased from 0.27 muA to 0.64 muA, which is increased by 137.04%; while the current intensity at +1V bias increased from 8.31 mua to 13.57 mua, an increase of 63.30%. By quantitatively giving +1V, -1V and the influence of the compressive strain on the current intensity of the device under the condition of no bias voltage, the application of the compressive strain can greatly improve the photoelectronic performance of the device regardless of the existence of the bias voltage.
In conclusion, the invention prepares the high-quality p-Si/n-ZnO film heterojunction device, and provides a scheme for regulating and controlling the electronic and optoelectronic properties of the p-Si/n-ZnO film heterojunction device in the framework of piezoelectric electronics and piezoelectric optoelectronics, thereby widening the application range of the piezoelectric electronics and the piezoelectric optoelectronics to a certain extent.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical scope of the present invention by equivalent replacement or change according to the technical solution and the inventive concept of the present invention within the technical scope of the present invention.
Claims (9)
1. A method for regulating and controlling the electrical property and the photoelectric output of a p-Si/n-ZnO thin film heterojunction is characterized by comprising a cantilever type strain mechanism (1), wherein the strain mechanism (1) comprises a clamping piece structure (2) and a moving structure (3), a p-Si/n-ZnO thin film heterojunction device (4) is used as a cantilever beam, the moving structure (3) comprises a tabletting device and a moving motor, the tabletting device can move along with the moving motor, the moving motor can accurately control the moving distance and realize locking and positioning, the moving motor controls the tabletting device to press down to cause the bending of the cantilever beam, the bending deformation of the cantilever beam can be equivalent to the generation of longitudinal compressive strain with a part in the thickness direction of the p-Si/n-ZnO thin film heterojunction device (4), the equivalent deformation can also change along with the change of the stroke of the moving motor, wherein the bottommost layer of the p-Si/n-ZnO thin film heterojunction device (4) is a p-type silicon substrate (5), a ZnO thin film layer (6) and an ITO thin film electrode II (7) which are parallel and not in contact with each other are arranged next to the p-Si/n-ZnO thin film heterojunction device, and a layer of ITO thin film electrode I (8) is attached to the upper portion of the ZnO thin film layer (6).
2. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 1, wherein the p-Si/n-ZnO thin film heterojunction device (4) is tested by the following steps: fix iron stand platform (9) on optical platform, place straining mechanism (1) on iron stand platform (9), laser instrument (10) are placed at electricity tester (11) top, have added shutter (12) in the optic fibre exit of laser instrument (10) with the on-off of quick control light path, shutter (12) use 3D to print the shell cladding of ordering with optic fibre export and link to each other, shutter (12) carry out fixed stay through iron stand platform (9).
3. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 2, wherein the p-type silicon substrate (5) is a p-doped silicon wafer with the thickness of 10mm x 0.5mm, and is ultrasonically cleaned for 30 minutes by deionized water, acetone and ethanol and then dried by a nitrogen gun to serve as a substrate for later use.
4. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 3, wherein the ZnO thin film layer (6), the ITO thin film electrode II (7) and the ITO thin film electrode I (8) are all prepared in a radio frequency magnetron sputtering mode.
5. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction as claimed in claim 4, wherein the preparation of the ZnO film layer (6) is characterized in that a p-type silicon substrate (5) is placed in a JGP-350B type magnetron sputtering instrument vacuum cavity, wherein a target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, after the p-type silicon substrate (5) is covered with a mask plate with a corresponding pattern, the cavity is closed and pumped to 4 × 10 by a mechanical pump and a molecular pump-4And (3) introducing argon and oxygen according to the ratio of 40:2 after 5 times of argon gas scrubbing for Pa, keeping the air pressure of the cavity to be stable at 2.2Pa, rotating the revolution shaft to move the sample table away to carry out pre-sputtering for 10min before formal sputtering is started, then formally sputtering for 15min, wherein the pre-sputtering power and the formal sputtering power are both 80W, the substrate heating temperature is 500 ℃, and finally, naturally annealing the p-type silicon substrate (5) and taking out.
6. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 5, wherein the ITO thin film electrode II (7) and the ITO thin film electrode I (8) are prepared by the following steps: and (2) putting the p-type silicon substrate (5) into a vacuum cavity of a JGP-350B type magnetron sputtering instrument, wherein the target material is an ITO ceramic target material with the purity of 99.99 percent and the diameter of 6cm, the sputtering temperature is room temperature, pure argon is introduced, the cavity pressure is kept at 2.2Pa, the sputtering power is 50W, the sputtering time is 10min, and finally, the p-type silicon substrate (5) is taken out after natural annealing.
7. The force and light composite detector is obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction as claimed in any one of claims 1 to 6.
8. The gate circuit obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in any one of claims 1 to 6.
9. The photovoltaic device obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction as claimed in any one of claims 1 to 6.
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