CN116155231A - Bulk acoustic wave resonator and preparation method thereof - Google Patents
Bulk acoustic wave resonator and preparation method thereof Download PDFInfo
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- CN116155231A CN116155231A CN202310179840.8A CN202310179840A CN116155231A CN 116155231 A CN116155231 A CN 116155231A CN 202310179840 A CN202310179840 A CN 202310179840A CN 116155231 A CN116155231 A CN 116155231A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application discloses a bulk acoustic wave resonator and a preparation method thereof, relates to the technical field of resonators, and discloses a preparation method of a bulk acoustic wave resonator, which comprises the following steps: providing a substrate; depositing a piezoelectric film on the upper surface of the substrate by adopting a magnetron sputtering process; the magnetron sputtering process comprises the steps of placing a substrate on which a piezoelectric film is to be deposited on an anode of a magnetron sputtering system; obtaining a sputtering target material and placing the sputtering target material on a cathode of a magnetron sputtering system; rare gas is introduced into a vacuum cavity of the magnetron sputtering system; applying a driving voltage to the anode and the cathode to generate plasma in the cavity; the amplitude of the driving voltage is controlled to change the deposition rate of the plasma on the substrate, and piezoelectric films with different stresses are obtained by changing the deposition rate. According to the bulk acoustic wave resonator and the preparation method thereof, the electromechanical coupling coefficient can be adjusted by adjusting the stress value of the piezoelectric layer, so that the process difficulty is simplified.
Description
Technical Field
The application relates to the technical field of resonators, in particular to a bulk acoustic wave resonator and a preparation method thereof.
Background
The core structure of the film bulk acoustic resonator is a piezoelectric oscillation pile structure formed by electrodes, piezoelectric layers and electrodes, when alternating electric signals are applied to the electrodes at two ends, the electric signals are converted into mechanical signals due to the inverse piezoelectric effect of materials, the mechanical signals propagate in the film in the form of sound waves, standing waves are generated when the wavelength and thickness of sound waves in the vertical direction meet certain conditions, the loss of energy is minimum, finally, the acoustic signals are converted into electric signals through the piezoelectric effect to carry out frequency selection, the effective electromechanical coupling coefficient of the resonator is determined through the energy conversion efficiency (electromechanical coupling coefficient) of the acoustic signals into the electric signals through the piezoelectric effect, the effective electromechanical coupling of the resonator seems to be a fixed value for a certain fixed piezoelectric material, the effective electromechanical coupling coefficient of the manufactured resonator is also determined, and in the practical application process, the filter with the corresponding bandwidth is designed according to the frequency band used, and the effective electromechanical coupling coefficient of the designed resonator can be adjusted according to the bandwidth.
The method for adjusting the effective electromechanical coupling coefficient of the resonator in the prior art mainly comprises the steps of connecting corresponding capacitor structures in parallel on the resonator for adjustment, wherein the size of the capacitor can be adjusted through designing geometric dimensions, for example, the capacitor is introduced between a piezoelectric layer material and a bottom electrode, and the size of the capacitor is mainly controlled through adjusting the distance between the piezoelectric material and the bottom electrode. And further for example by designing the capacitance between the piezoelectric material at the top (up) of the resonator and the top electrode, and introducing a parallel plate capacitor at the side (down) of the resonator. However, the above technical solutions all require additional process steps, which results in more complex manufacturing process of the resonator and greatly increases the process difficulty.
Disclosure of Invention
The purpose of the application is to provide a bulk acoustic wave resonator and a preparation method thereof, wherein the electromechanical coupling coefficient can be adjusted by adjusting the stress value of a piezoelectric layer, so that the process difficulty is simplified.
In one aspect, embodiments of the present application provide a method for manufacturing a bulk acoustic wave resonator, including: providing a substrate; depositing a piezoelectric film on the upper surface of the substrate by adopting a magnetron sputtering process; the magnetron sputtering process comprises the steps of placing a substrate on which a piezoelectric film is to be deposited on an anode of a magnetron sputtering system; obtaining a sputtering target material and placing the sputtering target material on a cathode of a magnetron sputtering system; rare gas is introduced into a vacuum cavity of the magnetron sputtering system; applying a driving voltage to the anode and the cathode to generate plasma in the vacuum cavity; the amplitude of the driving voltage is controlled to change the deposition rate of the plasma on the substrate, and piezoelectric films with different stresses are obtained by changing the deposition rate.
As one embodiment, the rare gas is Ar gas.
As one embodiment, applying a driving voltage to the anode and the cathode to generate plasma in the vacuum chamber includes: applying driving voltage to the anode and the cathode, and generating a driving electric field between the cathode and the anode; the driving electric field ionizes the Ar gas to generate electrons and Ar ions.
As one embodiment, controlling the magnitude of the drive voltage to vary the rate at which the plasma is deposited on the substrate includes: ar ions bombard the sputtering target material under the action of the driving electric field; the sputtering target is separated from the surface of the sputtering target under the action of electrons and Ar ions to form target atoms; the rate at which Ar ions bombard the sputtering target is controlled by controlling the magnitude of the driving voltage.
As one embodiment, controlling the rate at which Ar ions bombard the sputter target by controlling the magnitude of the driving voltage includes: the rate at which Ar ions bombard the sputter target is increased by increasing the magnitude of the drive voltage.
As one embodiment, controlling the rate at which Ar ions bombard the sputter target by controlling the magnitude of the driving voltage includes: the rate at which Ar ions bombard the sputter target is reduced by reducing the magnitude of the drive voltage.
As one embodiment, the sputtering target is aluminum.
As one practicableIn such a way that the vacuum pressure P of the vacuum chamber<5*10 -8 Torr, the temperature of the vacuum chamber is between 180-220 ℃.
The embodiment of the application provides a bulk acoustic wave resonator, which is prepared by the preparation method of bulk acoustic wave resonance.
As an embodiment, an air gap is provided between the piezoelectric film and the substrate.
The beneficial effects of the embodiment of the application include:
the preparation method of the bulk acoustic wave resonator provided by the application comprises the following steps: providing a substrate; depositing a piezoelectric film on the upper surface of the substrate by adopting a magnetron sputtering process; the magnetron sputtering process comprises the steps of placing a substrate on which a piezoelectric film is to be deposited on an anode of a magnetron sputtering system; obtaining a sputtering target material and placing the sputtering target material on a cathode of a magnetron sputtering system; rare gas is introduced into a vacuum cavity of the magnetron sputtering system; applying a driving voltage to the anode and the cathode to generate plasma in the vacuum cavity; the amplitude of the driving voltage is controlled to change the speed of depositing plasma on the substrate, piezoelectric films with different stresses are obtained by changing the speed, the stress value of the piezoelectric films can be controlled by controlling the amplitude of the driving voltage, and the adjustment of the electromechanical coupling coefficient can be realized by controlling the amplitude of the driving voltage only when magnetron sputtering is performed according to the relation between the stress value and the electromechanical coupling coefficient. No other components are needed, so that the preparation process for adjusting the electromechanical coupling coefficient is simplified.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 2 is a schematic diagram of a magnetron sputtering system according to an embodiment of the present application.
Icon: 10-a magnetron sputtering system; 11-a vacuum cavity; 12-cathode; 13-an anode; 21-a substrate; 22-sputtering a target; 23-target atoms.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
The effective electromechanical coupling of the resonator seems to determine the bandwidth of the built filter, and the electromechanical coupling coefficient of the resonator is usually constant for a certain fixed piezoelectric material, so that the effective electromechanical coupling coefficient of the manufactured resonator is also determined, and in the practical application process, the filter with the corresponding bandwidth needs to be designed according to the frequency band, so that the effective electromechanical coupling coefficient of the resonator designed by us needs to be adjusted according to the bandwidth.
The application provides a preparation method of a bulk acoustic wave resonator, as shown in fig. 1, comprising the following steps:
s10: providing a substrate 21;
the specific material and form of the substrate 21 are not limited in this embodiment, and a silicon substrate, a silicon dioxide substrate, or a substrate having a lattice structure similar to that of a piezoelectric film, which are commonly used in a semiconductor device in the prior art, may be used. Those skilled in the art will choose the specific one according to the actual situation.
S20: the deposition of the piezoelectric film on the upper surface of the substrate 21 by using a magnetron sputtering process, as shown in fig. 2, specifically, the deposition of the piezoelectric film on the upper surface of the substrate 21 by using a magnetron sputtering process includes:
s21: placing a substrate 21 on which a piezoelectric thin film is to be deposited on an anode 13 of the magnetron sputtering system 10;
s22: obtaining a sputtering target 22 and placing the sputtering target 22 on the cathode 12 of the magnetron sputtering system 10;
s23: rare gas is introduced into the vacuum cavity 11 of the magnetron sputtering system 10;
s24: applying a driving voltage to the anode 13 and the cathode 12 to generate plasma in the vacuum cavity 11;
a driving voltage is applied between the anode 13 and the cathode 12, a driving electric field is formed between the anode 13 and the cathode 12, and as the voltage between the two is gradually increased, a glow discharge phenomenon is generated between the anode 13 and the cathode 12 after a certain voltage is reached, so that a large amount of electrons and rare gas ions are formed by ionization of the rare gas. The rare gas ions are positively charged, the sputtering target 22 is disposed on the cathode 12 of the magnetron sputtering system 10, a large amount of formed rare gas ions are accelerated to move towards the sputtering target 22 and bombard the sputtering target 22 under the action of a driving electric field, and when the accelerated rare gas ions bombard the sputtering target 22, the accelerated rare gas ions have a larger speed, have certain energy, collide with atoms on the surface of the sputtering target 22, exchange with the energy of atoms on the surface of the sputtering target 22, and are separated from the surface of the sputtering target 22 after the atoms on the surface of the sputtering target 22 obtain energy, so as to form target atoms 23.
S25: the amplitude of the driving voltage is controlled to change the rate at which the plasma bombards the sputtering target 22, and piezoelectric films of different stresses are obtained by changing the rate.
After the target atoms 23 in the plasma are separated from the surface of the sputtering target 22, a certain energy is provided, and under the action of the driving voltage, the target atoms 23 move towards the substrate 21 and are deposited on the surface of the substrate 21. The magnitude of the driving voltage determines the magnitude of the electric field strength of the driving electric field, the magnitude of the electric field strength determines the acceleration of the movement of the rare gas ions in the electric field, and further determines the energy of the rare gas ions when the rare gas ions bombard the sputtering target 22, and the energy of the rare gas ions determines the speed of the target atoms 23 when the target atoms 23 are separated from the surface of the sputtering target 22 in the process of exchanging energy with the target atoms 23, thereby determining the speed of the target atoms 23 when being deposited on the surface of the substrate 21, thereby determining the stress of the target atoms 23 and the substrate 21 and the stress of the upper layer atoms and the lower layer atoms, and thus determining the stress of the piezoelectric film.
The stress value of the piezoelectric film is controlled by controlling the amplitude of the driving voltage, and the stress value of the piezoelectric film and the electromechanical coupling coefficient show a certain relation, so that the electromechanical coupling coefficient can be controlled only by controlling the driving voltage in the magnetron sputtering process, any step is not required to be added in the preparation process of the bulk acoustic wave resonator, any element is not required to be added on the lifting wave resonator, and the preparation process of the bulk acoustic wave resonator is simplified.
Electrons in the plasma accelerate to the anode 13, and meanwhile, a magnetic field existing near the cathode 12 has a movement range which limits the electrons (Lorentz force does not work and does not influence kinetic energy), so that the electrons are gathered near the cathode 12, the concentration of the plasma of the target accessory is improved, and then the electrons do cycloidal movement and spiral movement near the cathode 12 due to the Lorentz force and the electric field force and always strike the non-ionized rare gas, so that the rare gas forms more rare gas ions and electrons.
It can be understood that the bulk acoustic wave resonator further includes a lower electrode disposed between the piezoelectric film and the substrate 21 and an upper electrode on the piezoelectric film, and for the specific preparation process of the upper electrode and the lower electrode, the embodiment of the application is not limited in particular, and by way of example, the lower electrode may be laid on the piezoelectric film, then the lower electrode and the substrate are bonded by using a bonding element on one side of the lower electrode, then the substrate 21 is peeled off to enable the piezoelectric film to leak, and finally the upper electrode is formed on the exposed surface of the piezoelectric film, so as to form the bulk acoustic wave resonator; alternatively, before the piezoelectric film is deposited on the substrate 21, a lower electrode may be laid on the substrate 21, then the substrate 21 with the lower electrode laid thereon is placed on the anode 13 of the magnetron sputtering system 10, so that the piezoelectric film is deposited on the surface of the lower electrode, and after the preparation of the piezoelectric film is completed, an upper electrode is laid on the piezoelectric film, so as to form the bulk acoustic wave resonator.
In addition, other factors in the magnetron sputtering process are not specifically limited in the embodiments of the present application, for example, the sputtering temperature, the distance between the sputtering target 22 and the substrate 21, the flow rate of rare gas, the sputtering power, and the like, and those skilled in the art may specifically limit according to the actual situation. Illustratively, the flow rate of the rare gas is set between 23-27 sccm; the sputtering power is set to 6KW; the pulse frequency was set to 100KHz.
The preparation method of the bulk acoustic wave resonator comprises the following steps: providing a substrate 21; depositing a piezoelectric film on the upper surface of the substrate 21 by a magnetron sputtering process; wherein the magnetron sputtering process comprises placing a substrate 21 on which a piezoelectric film is to be deposited on an anode 13 of the magnetron sputtering system 10; obtaining a sputtering target 22 and placing the sputtering target 22 on the cathode 12 of the magnetron sputtering system 10; rare gas is introduced into the vacuum cavity 11 of the magnetron sputtering system 10; applying a driving voltage to the anode 13 and the cathode 12 to generate plasma in the vacuum cavity 11; the amplitude of the driving voltage is controlled to change the deposition rate of the plasma on the substrate 21, the piezoelectric films with different stresses are obtained by changing the deposition rate, the stress value of the piezoelectric film can be controlled by controlling the amplitude of the driving voltage, and the adjustment of the electromechanical coupling coefficient can be realized by controlling the amplitude of the driving voltage only during magnetron sputtering according to the relation between the stress value and the electromechanical coupling coefficient. No other components are needed, so that the preparation process for adjusting the electromechanical coupling coefficient is simplified.
Optionally, the rare gas is Ar gas.
Ar gas is colorless, odorless and nontoxic inert gas, has extremely inert chemical properties, is not easy to react with other substances in the magnetron sputtering system 10 in magnetron sputtering, and has the advantages of being easier to obtain and easier to store than other rare gases.
In one implementation manner of the embodiment of the present application, applying a driving voltage to the anode 13 and the cathode 12 to generate plasma in the vacuum cavity 11 includes:
applying a driving voltage to the anode 13 and the cathode 12, and generating a driving electric field between the cathode 12 and the anode 13;
when a driving voltage is applied to the anode 13 and the cathode 12, a voltage difference is generated between the anode 13 and the cathode 12, and a driving electric field directed from the anode 13 to the cathode 12 is generated between the anode 13 and the cathode 12 due to the voltage difference.
The driving electric field ionizes the Ar gas to generate electrons and Ar ions.
Ar gas is ionized under the action of a driving electric field to form electrons and Ar ions.
Optionally, controlling the magnitude of the drive voltage to vary the rate at which the plasma bombards the sputter target 22 includes:
ar ions bombard the sputtering target 22 under the action of the driving electric field;
the direction of the driving electric field is directed from the anode 13 to the cathode 12, ar ions are positively charged, when the positively charged ions are arranged in the electric field, the Ar ions are accelerated to move towards the cathode 12, the sputtering target 22 is arranged on the cathode 12, and the accelerated Ar ions bombard the sputtering target 22.
The sputtering target 22 is separated from the surface of the sputtering target 22 under the action of electrons and Ar ions to form target atoms 23; the rate at which Ar ions bombard the sputter target 22 is controlled by controlling the magnitude of the drive voltage.
When Ar ions with higher speed bombard the surface of the sputtering target 22, energy exchange occurs with atoms on the surface of the sputtering target 22, so that the atoms on the surface of the sputtering target 22 have higher energy, and the atoms on the surface of the sputtering target 22 can be separated from the constraint of the surface of the sputtering target 22 by the higher energy, so that target atoms 23 are formed.
In one implementation of this embodiment, controlling the rate at which Ar ions bombard the sputter target 22 by controlling the magnitude of the driving voltage includes: the rate at which Ar ions bombard the sputter target 22 is increased by increasing the magnitude of the drive voltage.
Optionally, controlling the rate at which Ar ions bombard the sputter target 22 by controlling the magnitude of the driving voltage includes: the rate at which Ar ions bombard the sputter target 22 is reduced by reducing the magnitude of the drive voltage.
Those skilled in the art will appreciate that when charged ions are in an electric field, they are subjected to an electric field and move in the direction of the electric field, specifically, the Ar ions in the embodiment of the present application carry positive charges, and the electric field is driven to be directed from the anode 13 to the cathode 12, so that the Ar ions are accelerated towards the anode 13. The magnitude of the driving voltage determines the magnitude of the electric field strength, the magnitude of the driving electric field strength determines the electric field force applied to the Ar ions, and the electric field force received by the Ar ions determines the acceleration of the Ar ion motion. When the initial velocity of Ar ions is fixed, the larger the magnitude of the driving voltage, the larger the intensity of the driving electric field, the larger the electric field force applied to the Ar ions, the larger the corresponding acceleration of the Ar ions, the larger the rate at which the Ar ions bombard the sputtering target 22, whereas the smaller the magnitude of the driving voltage, the smaller the intensity of the driving electric field, the smaller the electric field force applied to the Ar ions, the smaller the corresponding acceleration of the Ar ions, and the smaller the rate at which the Ar ions bombard the sputtering target 22.
In one implementation of the present embodiment, the sputter target 22 is aluminum.
Aluminum nitride has the advantages of high sound velocity, high temperature resistance, stable performance and the like, so the piezoelectric film of the embodiment of the application is prepared from an aluminum nitride material. When the piezoelectric film is made of aluminum nitride, the sputtering target 22 is aluminum, and Ar ions bombard the aluminum surface, so that aluminum atoms on the aluminum surface are separated from the surface of the aluminum material and deposited on the substrate 21. In order to realize the preparation of the aluminum nitride piezoelectric film, nitrogen is also required to be introduced into the vacuum chamber, the nitrogen is ionized under the action of the driving electric field to form nitrogen ions, the nitrogen ions are also deposited on the surface of the substrate 21 under the action of the driving electric field, the aluminum atoms and the nitrogen ions deposited on the surface of the substrate 21 are crystallized in the subsequent process to form aluminum nitride crystals, and finally the piezoelectric film is formed. When the vacuum cavity is required to be filled with nitrogen and argon, the flow rate of the nitrogen is 150-160sccm, preferably 150sccm. The flow rate of argon is between 23 and 27sccm, preferably 25sccm.
Optionally, the vacuum pressure P of the vacuum chamber 11<5*10 -8 Torr, the temperature of the vacuum chamber is between 180-220 ℃.
It will be appreciated by those skilled in the art that glow discharge refers to a gas discharge phenomenon that exhibits glow in a low pressure gas, i.e., a self-sustaining discharge phenomenon in a lean gas. When the vacuum degree in the vacuum chamber is higher, ar gas is more easily ionized, and the embodiment of the application sets the vacuum degree of the vacuum chamber 11 to the vacuum pressure P<5*10 -8 Torr。
In addition, the temperature of the vacuum cavity is also a factor influencing the ionization degree, and in the embodiment of the application, the temperature of the vacuum cavity is set between 180 ℃ and 220 ℃, preferably, is set to be 200 ℃.
The embodiment of the application also discloses a bulk acoustic wave resonator which is prepared by adopting the preparation method of bulk acoustic wave resonance.
The bulk acoustic wave resonator disclosed by the embodiment of the application is prepared by adopting the preparation method of the bulk acoustic wave resonator, so that the electromechanical coupling coefficient of the bulk acoustic wave resonator can be adjusted within a limited range, the bulk acoustic wave resonator is not limited by a piezoelectric film material, more elements are not introduced, the volume of the bulk acoustic wave resonator can be reduced, and the structure of the bulk acoustic wave resonator is simplified.
In one possible implementation of this embodiment, an air gap is provided between the piezoelectric film and the substrate 21.
An air gap is arranged between the piezoelectric film and the substrate 21, and the air gap is used as an acoustic mirror, so that sound waves transmitted to the surface of the lower electrode can be reflected, leakage of the sound waves is avoided, and the performance of the bulk acoustic wave resonator is improved.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (10)
1. A method of manufacturing a bulk acoustic wave resonator, comprising:
providing a substrate;
depositing a piezoelectric film on the upper surface of the substrate by adopting a magnetron sputtering process;
the magnetron sputtering process comprises the following steps:
placing a substrate on which a piezoelectric film is to be deposited on an anode of a magnetron sputtering system;
obtaining a sputtering target material and placing the sputtering target material on a cathode of a magnetron sputtering system;
rare gas is introduced into a vacuum cavity of the magnetron sputtering system;
applying a driving voltage to the anode and the cathode to generate plasma in the vacuum cavity;
and controlling the amplitude of the driving voltage to change the speed of depositing the plasma on the substrate, and changing the speed to obtain the piezoelectric films with different stresses.
2. The method of manufacturing a bulk acoustic wave resonator according to claim 1, characterized in that,
the rare gas is Ar gas.
3. The method of manufacturing a bulk acoustic wave resonator according to claim 2, wherein applying a driving voltage to the anode and cathode to generate ions in the vacuum chamber comprises:
applying driving voltage to the anode and the cathode, and generating a driving electric field between the cathode and the anode;
the driving electric field ionizes the Ar gas to generate electrons and Ar ions.
4. A method of preparing a bulk acoustic wave resonator according to claim 3, characterized in that controlling the amplitude of the driving voltage to vary the rate at which the plasma is deposited on the substrate comprises:
the Ar ion bombards the sputtering target under the action of the driving electric field;
the sputtering target is separated from target atoms formed on the surface of the sputtering target under the action of the electrons and Ar ions;
and controlling the speed of Ar ion bombardment sputtering target material by controlling the amplitude of the driving voltage.
5. The method of claim 4, wherein controlling the rate at which the Ar ions bombard the sputtering target by controlling the magnitude of the driving voltage comprises:
and increasing the speed of Ar ion bombardment sputtering target material by increasing the amplitude of the driving voltage.
6. The method of claim 4, wherein controlling the rate at which the Ar ions bombard the sputtering target by controlling the magnitude of the driving voltage comprises:
and reducing the speed of Ar ion bombardment sputtering target material by reducing the amplitude of the driving voltage.
7. The method of manufacturing a bulk acoustic wave resonator according to claim 4, characterized in that,
the sputtering target is aluminum.
8. The method of manufacturing a bulk acoustic wave resonator according to any of claims 1 to 7, characterized in that the vacuum pressure P of the vacuum cavity<5*10 -8 And the temperature of the vacuum cavity is 180-220 ℃ in Torr.
9. A bulk acoustic wave resonator prepared by the method of any one of claims 1-8.
10. The bulk acoustic resonator of claim 9, wherein an air gap is provided between the piezoelectric film and the substrate.
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