CN104532207B - Silicon oxynitride membrane material as well as preparation method and use thereof - Google Patents
Silicon oxynitride membrane material as well as preparation method and use thereof Download PDFInfo
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Abstract
The invention provides a silicon oxynitride membrane material and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a cavity of a high-density plasma-enhanced chemical vapor deposition device, introducing NH3, O2 and a SiH4-containing gas as reactive gases, introducing a carrier and a protective gas, carrying out vapor deposition to obtain the silicon oxynitride membrane material, wherein the working temperature of the cavity of the chemical vapor deposition device is 100-260 DEG C, the working pressure is 1-4Pa and the power is 200-480W; the vapor deposition time is 4-6min; the volume ratio of the SiH4-containing gas to O2 is 9-110, the volume ratio of the SiH4-containing gas to NH3 is 3-11 and the volume ratio of SiH4 gas to argon is 0.5-2. The silicon oxynitride membrane material, which is prepared on a four-inch silicon substrate, has a thickness of about 100nm and the non-uniformity of the membrane is less than 0.7%.
Description
Technical field
The invention belongs to optics, quasiconductor and technical field of microelectronic devices are and in particular to a kind of silicon oxynitride membrane material
And its production and use.
Background technology
Thin film is a kind of special physical form, due to it on this specific direction of thickness small-sized, simply microcosmic
Measurable amount, and in a thickness direction due to the presence on surface, interface, so that material seriality is interrupted, so that thin
Membrane material creates the special performances different from bulk material.Optical thin film is to be made up of thin layered medium, by interface
Propagate a class optical medium material of light beam, be widely used in optics and photoelectron technical field, manufacture various optical instruments.Optics
Thin film technique has defined rounded system in theoretical, design, calculating and process aspect, and the function of some new microstructures is thin
Film is increasingly developed out, the appearance in succession of these function films so that optical film technique widely to penetrate into each emerging
Field of scientific study in.
Silicon oxynitride film is a kind of good high temperature ceramic material, have excellent mechanical property, thermodynamic property,
Chemical stability and the oxygen characteristic of resistance to atom；Because silicon oxynitride is the mesophase of silicon dioxide and silicon nitride, it is optically and electrically
Performance falls between, thus can regulate and control its refraction index (1.46 (sio within the specific limits by changing chemical composition2)
～2.3 (sin1.3)) and dielectric constant (3.9 (sio2) and 7.8 (sin1.3))；In addition silicon oxynitride also can effectively suppress boron,
The impurity elements such as oxygen, sodium spread.A series of this good characteristic attract researchers around the preparation of silicon oxy-nitride material and its
Extensive work has been carried out in the application of the aspects such as microelectronic component, fiber waveguide, gradient optics material, wherein again with silicon oxynitride film
The preparation of material and applied research are the most noticeable.
Currently mainly adopt silicon dioxide as dielectric film at aspects such as microelectronic component, optical waveguide materials.Titanium dioxide
Though silicon thin film has low dielectric constant, defect concentration and residual stress, in the diffusion stoping the impurity elements such as oxygen, sodium, boron
Aspect is not so good as silicon nitride；But in silicon nitride si dangling bonds have the characteristics that and its with nitrogen content increase and increase can lead to thin
Film shows very high dielectric constant and tension under certain condition, and rich nitrogen sinxFilm contains very high positive charge and bears
Charge defects, become the center of electric charge capture.And silicon oxynitride film material is due to having the excellent of silicon nitride and silicon dioxide concurrently
Characteristic, very potential replacement of silicon dioxide thin-film material is applied at the aspect such as microelectronics and optics.
Application with thin film is more and more extensive, and the technology of preparing of thin film is increasingly becoming in high-tech product process technology
Important means.The preparation method of thin film is a lot, such as vapor growth method, liquid-phase growth method (or gas, liquid epitaxy), oxidation
Method, diffusion and rubbing method, galvanoplastic etc., and several method in each film-forming method, can be divided into.Plasma chemistry
Vapour deposition (pecvd) method is due to low, the reproducible feature of its motility, depositing temperature, there is provided make in different matrix
The probability of standby various thin film, becomes and prepares one of silicon oxynitride film most common method.
The uniformity of thin film is firstly the need of the key issue solving and challenge in membrane-film preparation process.Film thickness is not
Uniformity, reflect the film thickness being deposited on substrate to be plated according to substrate in vacuum chamber the change of present position and change
Situation.Membrane thickness unevenness includes two aspects: is in the thin film of substrates of different position deposition at same group during being 1. coated with
There is approximate film thickness distribution；2. the every thin film obtaining only exists a range of film thickness error distribution.Membrane thickness unevenness
Aspect 1. ensure that the plated film efficiency of industrialization, 2. aspect ensure that each end properties.Therefore, membrane thickness unevenness is
Weigh coating apparatus performance and an important indicator of film quality, directly influence reliability, the stability of plated film device, with
And the concordance of product.Very big to the yield impact of the device production such as optics, photoelectricity.
And less with regard to research uniformity of film at present, especially use optics/dielectric film in the devices, for
The method preparing silicon oxynitride membrane material using high-density plasma reinforced chemical vapor deposition apparatus, operating condition is more,
Including temperature, pressure, power, time, it is passed through gas ratio etc., and has close mutual relation each other, be not independent
Unitary variant, it is very important for therefore probing into a kind of silicon oxynitride preparation method having good uniformity in this area.
Content of the invention
In order to overcome the larger defect of silicon oxynitride film inhomogeneities in prior art, an object of the present invention is
Provide a kind of silicon oxynitride membrane material, described membrane material has good uniformity, and thickness is about 100nm, and it has well
Insulating properties, stability and mechanical property, quasiconductor, micro- can be widely used in as insulating barrier, protecting film or blooming
The fields such as ripple, photoelectron and optics.
For reaching above-mentioned purpose, the present invention is using following technological means:
A kind of silicon oxynitride membrane material, the thickness of described silicon oxynitride membrane material is 95.5-97.5nm；And in four inches of bases
In the range of bottom, thin film inhomogeneities are less than 0.7%；
Wherein, the computational methods of described inhomogeneities are: thin film inhomogeneities=(maximum-minima)/(meansigma methodss ×
2) × 100%, in the range of four inch substrate, surveyed different points and be no less than 10, preferably not less than 17.
Wherein, described maximum is the maximum of silicon nitride film testing of materials dot thickness；Minima is silicon nitride film material
The minima of test dot thickness；Meansigma methodss are the meansigma methodss of silicon nitride film testing of materials dot thickness, and computing formula is: meansigma methodss=
Test dot thickness sum/number of checkpoints.
Preferably, the group of described silicon oxynitride membrane material is divided into sioxny, wherein 0 < x < 2,0 < y < 2.
The thin film inhomogeneities of the silicon oxynitride membrane material that the present invention provides are less than 0.7%.
The second object of the present invention there are provided a kind of preparation method of silicon oxynitride membrane material of the present invention, bag
Include following steps:
Substrate is placed in chemical vapor depsotition equipment cavity, is passed through nh3、o2Gas and contain sih4Gas as anti-
Answer gas, be passed through carrier and protective gas, carry out vapour deposition, obtain silicon oxynitride membrane material；
Wherein, the operating temperature of chemical vapor depsotition equipment cavity is 100-260 DEG C, and operating pressure is 1-4pa, and power is
200-480w；
Wherein, the time of described vapour deposition is 4-6min；Described containing sih4Gas and o2The volume ratio of gas is 9-
110, described contain sih4Gas and nh3The volume ratio of gas is 3-11, described contains sih4Gas and argon volume ratio
For 0.5-2.Wherein carrier gas and protective gas are same gas.
Method for preparing silicon oxynitride membrane material using chemical vapor depsotition equipment, operating condition is more, including temperature
Degree, pressure, power, time, it is passed through gas ratio etc., and has close mutual relation each other, be not independent single
How variable, therefore find a suitable operating condition, and tool acquires a certain degree of difficulty for those skilled in the art.
Prepared in the operating condition of silicon oxynitride membrane material using chemical vapor depsotition equipment, by by chemical vapor deposition
The operating temperature of equipment cavity is arranged on 100-260 DEG C, and operating pressure is arranged on 1-4pa, and power setting is 200-480w；And control
The time of vapour deposition processed is 4-6min；Control be passed through to contain sih4Gas and o2The volume ratio of gas is 9-110, controls
Be passed through contains sih4Gas and nh3The volume ratio of gas is 3-11, controls be passed through to contain sih4Gas and argon body
Long-pending than for 0.5-2 it is achieved that control thickness be 100nm about silicon oxynitride film material film inhomogeneities be less than 0.7%
Purpose.
Of the present invention prepared in the operating condition of silicon oxynitride membrane material using chemical vapor depsotition equipment, limited
Numerical value include any numerical value in described scope, for example, high-density plasma reinforced chemical vapor deposition apparatus cavity
Operating temperature can be 110 DEG C, 157 DEG C, 218 DEG C, 260 DEG C etc., operating pressure can for 1.2pa, 1.8pa, 2.2pa,
2.8pa, 3.2pa, 3.9pa etc., power can be 220w, 295w, 363w, 375w, 387w, 423w, 478w etc., vapour deposition
Time can be 4min, 4.2min, 4.8min, 5min, 5.5min, 6min etc., the sih being passed through4Gas and o2The volume ratio of gas
Can be 10,30,80,102 etc., the sih being passed through4Gas and nh3The volume ratio of gas can be 3.5,4.8,9.3,10.5 etc..
Preferably, described chemical vapor depsotition equipment is high-density plasma reinforced chemical vapor deposition apparatus；Excellent
Choosing is evacuated to 1 × 10-4-1×10-6pa.
Preferably, described carrier gas and shielding gas are noble gases, preferably neon, Krypton, nitrogen, a kind in argon
Or two kinds of mixing.
Preferably, the purity of described gas is more than 99%, preferably greater than 99.99%.
Preferably, described contain sih4Gas in sih4Account for 1-10%, argon accounts for 90-99%, preferably sih4Account for 5%,
Argon accounts for 95%.
Preferably, described substrate is any a kind in p-type doped monocrystalline silicon, N-shaped doped monocrystalline silicon or metal；Optionally
One layer of uniform metal or nonmetal film are prepared as the substrate of experiment on above-mentioned substrate in ground.
Preferably, described p-type doped monocrystalline silicon or N-shaped doped single crystal silicon substrate carry out following pretreatment: use hf acid soak
Deionized water cleaning, is then dried afterwards.
Preferably, the mass concentration of described hf acid is 2-10%, such as 3%, 5%, 7%, 8.3%, 9% etc., further
It is preferably 5%.
Preferably, the described time with hf acid soak is 0.5-10min, such as 1min, 1.4min, 3min, 5min,
7min, 8.4min, 9min etc., more preferably 3min.
Preferably, described metal substrate carries out following pretreatment: is cleaned by ultrasonic respectively with acetone and isopropyl alkyd, Ran Hougan
Dry.
Preferably, the described ultrasonic time is more than 2min, preferably 5min.
Preferably, the operating temperature of described chemical vapor depsotition equipment cavity is 230 DEG C, operating pressure is 2pa, power
For 375w；The time of described vapour deposition is 5min；Described containing sih4Gas and o2The volume ratio of gas is 100, described contains
There is sih4Gas and nh3The volume ratio of gas is 4.7, described contains sih4The volume ratio of gas and argon be 1.0.
As optimal technical scheme, preparation method of the present invention, comprise the steps:
(1) substrate is placed in high-density plasma reinforced chemical vapor deposition apparatus cavity, evacuation makes back end true
Reciprocal of duty cycle is 1 × 10-4-1×10-6Pa, heats substrate to 100-260 DEG C；
(2) by 1:(9-110) volume ratio be passed through o2Gas and contain sih4Gas as reacting gas, by 1:(3-
11) volume ratio is passed through nh3Gas and contain sih4Gas as reacting gas, be passed through argon as carrier gas and protective gas,
Adjustment operating air pressure is 1-4pa, and power is 200-480w, carries out chemical vapor deposition 4-6min；
(3) under the atmosphere of protective gas, it is down to room temperature, obtain silicon oxynitride membrane material of the present invention.
Preferably, step 3) described in protective gas be noble gases；It is preferably argon.
The third object of the present invention is to provide the purposes of silicon oxynitride membrane material of the present invention, described silicon oxynitride
Membrane material, as insulating barrier, protecting film or blooming, is applied to the fields such as quasiconductor, microwave, photoelectron and optics.
Compared with prior art, the invention has the following beneficial effects:
(1) thickness of the silicon oxynitride membrane material that the present invention provides is in 100nm, and has a good uniformity,
In the range of four inch substrate, thin film inhomogeneities are less than 0.7%；Its more existing magnetron sputtering method and e-beam evaporation obtain
The uniformity of silicon oxynitride membrane material is significantly improved；
(2) substrate that the present invention uses adopts and prepares one layer of gold on p (or n) type doped monocrystalline silicon, metal or above-mentioned substrate
Belong to or nonmetal film, can different materials interface preparation have excellent homogeneity, thickness be 100nm about nitrogen oxidation
Silicon fiml material；
(3) present invention provide have hundred nanometers of excellent homogeneity silicide film material preparation process simply easy
OK, there is great application potential.
Brief description
Fig. 1 is the scattergram that the embodiment of the present invention 1 performance characterization tests dot thickness.
Specific embodiment
For ease of understanding the present invention, it is as follows that the present invention enumerates embodiment.Those skilled in the art are it will be clearly understood that described enforcement
Example is only to aid in understanding the present invention, is not construed as the concrete restriction to the present invention.
Embodiment 1
A kind of silicon oxynitride membrane material, is prepared via a method which to obtain:
(1) substrate is done with p-type (100) doped monocrystalline silicon of polishing, and carry out following pretreatment: first described substrate is used
Hf acid soak 3min of 5wt%, then deionized water cleaning, are finally dried its surface；
(2) the pretreated substrate obtaining step (1) is put into high-density plasma reinforced chemical vapour deposition and is set
In standby cavity, and by settling chamber's evacuation, make back end vacuum 1 × 10-5Pa about, and heat substrate to 230 DEG C；
(3) with purity be all higher than 99.99% contain sih4Gas, nh3Gas, o2Gas and ar2Gas is source of the gas；Wherein, contain
sih4Gas, o2Gas, nh3Gas is reacting gas, ar2Gas is carrier gas and shielding gas, the ar of supply2Gas, o2Gas, nh3Gas and containing
sih4Gas flow amount be respectively as follows: 125.6sccm, 1.3sccm, 26.8sccm, 130.5sccm；Control the work of settling chamber
Air pressure is 2pa, and power is 375w, carries out chemical vapor deposition 285s；
(4) in ar2Under gas atmosphere, be cooled to room temperature, obtain and have good uniformity, thickness be 100nm about nitrogen oxidation
Silicon fiml material；
Performance characterization:
The sion membrane material of acquisition is carried out spectroscopic ellipsometers (unit type is se 850) test, test condition is: room
Temperature, 200～930nm wave-length coverage scans, and chooses 17 test points, described 17 test points be distributed as 1 central point, 8
Radius is the circumferential point of r, and 8 radiuses are the circumferential point of 2r, described circumferential point be uniformly distributed in circumferentially, wherein, r takes
Value is less than 1/4 (Fig. 1 is the schematic diagram of test point) of the length of minor face of substrate；Test result is as shown in Figure 1；By calculating it not
Uniformity is 0.48%.
Embodiment 2
A kind of silicon oxynitride membrane material, is prepared via a method which to obtain:
(1) the thick ti film of 200nm is prepared on p-type (100) doped monocrystalline silicon sheet of polishing, and with this as substrate, and
Carry out following pretreatment: use acetone and each ultrasonic 5min of isopropanol first, then deionized water cleaning, its surface is finally dried；
(2) the pretreated substrate obtaining step (1) is put into high-density plasma reinforced chemical vapour deposition and is set
In standby cavity, and by settling chamber's evacuation, make back end vacuum 1 × 10-5Pa about, and heat substrate to 150 DEG C；
(3) with purity be all higher than 99.99% contain sih4Gas, nh3Gas, o2Gas and ar2Gas is source of the gas；Wherein, contain
sih4Gas, o2Gas, nh3Gas is reacting gas, ar2Gas is carrier gas and shielding gas, the ar of supply2Gas, o2Gas, nh3Gas and containing
sih4Gas flow amount be respectively as follows: 135.6sccm, 4sccm, 24sccm, 130.5sccm；Control the operating air pressure of settling chamber
For 4pa, power is 308w, carries out chemical vapor deposition 300s；
(4) in ar2Under gas atmosphere, be cooled to room temperature, obtain and have good uniformity, thickness be 100nm about nitrogen oxygen
SiClx membrane material；
The sion membrane material of acquisition is carried out spectroscopic ellipsometers (unit type is se 850) test, method of testing and enforcement
The performance characterization method of example 1 is identical；Crossing and calculating its inhomogeneities is 0.58%.
Embodiment 3
A kind of silicon oxynitride membrane material, is prepared via a method which to obtain:
(1) substrate is done with the sapphire of polishing, and carry out following pretreatment: first by described substrate acetone and isopropanol
Each ultrasonic 5min, then deionized water cleaning, are finally dried its surface；
(2) the pretreated substrate obtaining step (1) is put into high-density plasma reinforced chemical vapour deposition and is set
In standby cavity, and by settling chamber's evacuation, make back end vacuum 1 × 10-6Pa about, and heat substrate to 260 DEG C；
(3) with purity be all higher than 99.99% contain sih4Gas, nh3Gas, o2Gas and ar2Gas is source of the gas；Wherein, contain
sih4Gas, o2Gas, nh3Gas is reacting gas, ar2Gas is carrier gas and shielding gas, the ar of supply2Gas, o2Gas, nh3Gas and containing
sih4Gas flow amount be respectively as follows: 125.6sccm, 15.8sccm, 12.2sccm, 130.5sccm；Control the work of settling chamber
Air pressure is 2.5pa, and power is 275w, carries out chemical vapor deposition 5min, obtain a layer thickness be 100nm about nitrogen oxidation
Silicon thin film；
(4) in ar2Under gas atmosphere, be cooled to room temperature, obtain and have good uniformity, thickness be 100nm about nitrogen oxidation
Silicon fiml material；
The silicon oxynitride membrane material of acquisition is carried out spectroscopic ellipsometers (unit type be se 850) test, method of testing with
The performance characterization method of embodiment 1 is identical；It is 0.55% by calculating its inhomogeneities.
Embodiment 4
A kind of silicon oxynitride membrane material, is prepared via a method which to obtain:
(1) substrate is done with the sapphire of polishing, and carry out following pretreatment: first by described substrate acetone and isopropanol
Each ultrasonic 2min, then deionized water cleaning, are finally dried its surface；
(2) the pretreated substrate obtaining step (1) is put into high-density plasma reinforced chemical vapour deposition and is set
In standby cavity, and by settling chamber's evacuation, make back end vacuum 1 × 10-6Pa about, and heat substrate to 100 DEG C；
(3) with purity be all higher than 99.99% contain sih4Gas, nh3Gas, o2Gas and ar2Gas is source of the gas；Wherein, contain
sih4Gas, o2Gas, nh3Gas is reacting gas, ar2Gas is carrier gas and shielding gas, the ar of supply2Gas, o2Gas, nh3Gas and containing
sih4Gas flow amount be respectively as follows: 1305sccm, 2.61sccm, 43.5sccm, 130.5sccm；Control the work of settling chamber
Air pressure is 1pa, and power is 200w, carries out chemical vapor deposition 6min, obtain a layer thickness be 100nm about silicon oxynitride
Thin film；
(4) in ar2Under gas atmosphere, be cooled to room temperature, obtain and have good uniformity, thickness be 100nm about nitrogen oxidation
Silicon fiml material；
The silicon oxynitride membrane material of acquisition is carried out spectroscopic ellipsometers (unit type be se 850) test, method of testing with
The performance characterization method of embodiment 1 is identical；It is 0.45% by calculating its inhomogeneities.
Embodiment 5
A kind of silicon oxynitride membrane material, is prepared via a method which to obtain:
(1) substrate is done with p-type (100) doped monocrystalline silicon of polishing, and carry out following pretreatment: first described substrate is used
Hf acid soak 0.5min of 10wt%, then deionized water cleaning, are finally dried its surface；
(2) the pretreated substrate obtaining step (1) is put into high-density plasma reinforced chemical vapour deposition and is set
In standby cavity, and by settling chamber's evacuation, make back end vacuum 1 × 10-4Pa about, and heat substrate to 150 DEG C；
(3) with purity be all higher than 99.99% contain sih4Gas, nh3Gas, o2Gas and ar2Gas is source of the gas；Wherein, contain
sih4Gas, o2Gas, nh3Gas is reacting gas, ar2Gas is carrier gas and shielding gas, the ar of supply2Gas, o2Gas, nh3Gas and containing
sih4Gas flow amount be respectively as follows: 65.5sccm, 1.9sccm, 16.5sccm, 130.5sccm；Control the work gas of settling chamber
Press as 3pa, power is 450w, carries out chemical vapor deposition 4min；
(4) in ar2Under gas atmosphere, be cooled to room temperature, obtain and have good uniformity, thickness be 100nm about nitrogen oxidation
Silicon fiml material；
The silicon oxynitride membrane material of acquisition is carried out spectroscopic ellipsometers (unit type be se 850) test, method of testing with
The performance characterization method of embodiment 1 is identical；It is 0.50% by calculating its inhomogeneities.
Applicant states, the present invention illustrates the method detailed of the present invention by above-described embodiment, but the present invention not office
It is limited to above-mentioned method detailed, that is, do not mean that the present invention has to rely on above-mentioned method detailed and could implement.Art
Technical staff is it will be clearly understood that any improvement in the present invention, the equivalence replacement to each raw material of product of the present invention and auxiliary element
Interpolation, selection of concrete mode etc., within the scope of all falling within protection scope of the present invention and disclosure.
Claims (25)
1. a kind of silicon oxynitride membrane material is it is characterised in that the thickness of described silicon oxynitride membrane material is 95.5-97.5nm；And
In the range of four inch substrate, thin film inhomogeneities are less than 0.7%；
Wherein, the computational methods of described inhomogeneities are: thin film inhomogeneities=(maximum-minima)/(meansigma methodss × 2) ×
100%, in the range of four inch substrate, surveyed different points and be no less than 10；Described silicon oxynitride membrane material is as follows using including
The method preparation of step:
Substrate is placed in chemical vapor depsotition equipment cavity, is passed through nh3、o2Gas and contain sih4Gas as reaction gas
Body, is passed through carrier gas and protective gas, carries out vapour deposition, obtains silicon oxynitride membrane material；
Wherein, the operating temperature of chemical vapor depsotition equipment cavity is 100-260 DEG C, and operating pressure is 1-4pa, and power is 200-
480w；
Wherein, the time of described vapour deposition is 4-6min, described contains sih4Gas and o2The volume ratio of gas is 9-110,
Described containing sih4Gas and nh3The volume ratio of gas is 3-11, described contains sih4Gas and protective gas volume ratio
For 0.5-2.
2. silicon oxynitride membrane material as claimed in claim 1 is no less than 17 it is characterised in that surveying different points.
3. silicon oxynitride membrane material as claimed in claim 1 is it is characterised in that the group of described silicon oxynitride membrane material is divided into
sioxny, wherein 0 < x < 2,0 < y < 2.
4. silicon oxynitride membrane material as claimed in claim 1 is it is characterised in that described chemical vapor depsotition equipment is high density
Plasma enhanced chemical vapor deposition equipment.
5. silicon oxynitride membrane material as claimed in claim 4 is it is characterised in that be evacuated to 1 × 10-4-1×10-6pa.
6. silicon oxynitride membrane material as claimed in claim 1 is it is characterised in that described carrier gas and protective gas are indifferent gas
Body.
7. silicon oxynitride membrane material as claimed in claim 6 is it is characterised in that described carrier gas and protective gas are neon, krypton
1 kind in gas, argon or two kinds of mixing.
8. silicon oxynitride membrane material as claimed in claim 6 is it is characterised in that the purity of described gas is more than 99%.
9. silicon oxynitride membrane material as claimed in claim 8 is it is characterised in that the purity of described gas is more than 99.99%.
10. silicon oxynitride membrane material as claimed in claim 1 is it is characterised in that described contain sih4Gas in sih4Account for 1-
10%, argon accounts for 90-99%.
11. silicon oxynitride membrane materials as claimed in claim 10 are it is characterised in that described contain sih4Gas in sih4Account for
5%, argon accounts for 95%.
The 12. silicon oxynitride membrane materials as described in one of claim 1-11 are it is characterised in that described substrate is single for p-type doping
In crystal silicon, N-shaped doped monocrystalline silicon or metal any a kind；Metal is optionally prepared on above-mentioned substrate or nonmetal film is made
Substrate for experiment.
13. silicon oxynitride membrane materials as claimed in claim 12 are it is characterised in that described p-type doped monocrystalline silicon, N-shaped adulterate
Monocrystalline substrate carries out following pretreatment: is cleaned with deionized water after hf acid soak, is then dried.
14. silicon oxynitride membrane materials as claimed in claim 13 are it is characterised in that the mass concentration of described hf acid is 2-
10%.
15. silicon oxynitride membrane materials as claimed in claim 14 are it is characterised in that the mass concentration of described hf acid is 5%.
16. silicon oxynitride membrane materials as claimed in claim 13 are it is characterised in that the described time with hf acid soak is 0.5-
10min.
17. silicon oxynitride membrane materials as claimed in claim 16 it is characterised in that the time of described use hf acid soak be
3min.
18. silicon oxynitride membrane materials as claimed in claim 1 are it is characterised in that described substrate carries out following pretreatment: use third
Ketone and isopropyl alkyd are cleaned by ultrasonic respectively, are then dried.
19. silicon oxynitride membrane materials as claimed in claim 18 are it is characterised in that the described ultrasonic time is more than 2min.
20. silicon oxynitride membrane materials as claimed in claim 19 are it is characterised in that the described ultrasonic time is 5min.
21. silicon oxynitride membrane materials as described in one of claim 1-11 are it is characterised in that described vapor deposition apparatus cavity
Operating temperature be 230 DEG C, operating pressure be 2pa, power be 375w；The time of described vapour deposition is 5min；Described containing
sih4Gas and o2The volume ratio of gas is 100, described contains sih4Gas and nh3The volume ratio of gas is 4.7, described
Containing sih4The volume ratio of gas and argon be 1.0.
The 22. silicon oxynitride membrane materials as described in one of claim 1-11 are it is characterised in that comprise the steps:
(1) substrate is placed in high-density plasma reinforced chemical vapor deposition apparatus cavity, evacuation makes background vacuum
For 1 × 10-4-1×10-6Pa, heats substrate to 100-260 DEG C；
(2) by 1:(9-110) volume ratio be passed through o2Gas and contain sih4Gas as reacting gas, by 1:(3-11)
Volume ratio is passed through nh3Gas and contain sih4Gas as reacting gas, be passed through argon as carrier gas and protective gas, adjust
Operating air pressure is 1-4pa, and power is 200-480w, carries out chemical vapor deposition 4-6min；
(3) under the atmosphere of protective gas, it is down to room temperature, obtain described silicon oxynitride membrane material.
23. silicon oxynitride membrane materials as claimed in claim 22 are it is characterised in that step 3) described in protective gas be lazy
Property gas.
24. silicon oxynitride membrane materials as claimed in claim 23 are it is characterised in that described protective gas is argon.
The purposes of the silicon oxynitride membrane material described in a kind of one of 25. claim 1-24 is it is characterised in that described silicon oxynitride
Membrane material, as insulating barrier, protecting film or blooming, is applied to quasiconductor, microwave, photoelectron or optics field.
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