CN113223943A - Piezoelectric thin film composite substrate and preparation method thereof - Google Patents

Piezoelectric thin film composite substrate and preparation method thereof Download PDF

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CN113223943A
CN113223943A CN202010071169.1A CN202010071169A CN113223943A CN 113223943 A CN113223943 A CN 113223943A CN 202010071169 A CN202010071169 A CN 202010071169A CN 113223943 A CN113223943 A CN 113223943A
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layer
thin film
sub
piezoelectric thin
isolation
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CN113223943B (en
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张秀全
朱厚彬
李真宇
薛海蛟
李洋洋
张涛
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Jinan Jingzheng Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials

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Abstract

Disclosed are a piezoelectric thin film composite substrate and a method for preparing the same, the piezoelectric thin film composite substrate including: a substrate; a piezoelectric thin film layer on the upper surface of the substrate; and the isolation layer is positioned between the substrate and the piezoelectric film layer. The isolation layer includes a plurality of sub-isolation layers having different refractive indexes and alternately stacked with each other, and each of the plurality of sub-isolation layers has a refractive index smaller than that of the piezoelectric thin film layer.

Description

Piezoelectric thin film composite substrate and preparation method thereof
Technical Field
The present invention relates to a piezoelectric thin film composite substrate and a method for manufacturing the same, and more particularly, to a piezoelectric thin film composite substrate capable of reducing optical loss and a method for manufacturing the same.
Background
Piezoelectric thin film materials such as lithium niobate thin films and lithium tantalate thin films have excellent nonlinear optical characteristics, electrooptical characteristics and acousto-optic characteristics, and are widely applied to the fields of optical signal processing, information storage and the like. The piezoelectric film composite substrate containing the lithium niobate film and/or the lithium tantalate film can be used for realizing a photoelectric device with a small volume, and has very wide application prospects in the fields of integrated optics and acoustics.
Currently, a typical piezoelectric thin film composite substrate may have a stacked structure such as a substrate/spacer/piezoelectric thin film layer, for example, a silicon substrate/silicon oxide (SiO)x) The isolation layer/lithium niobate or lithium tantalate piezoelectric thin film layer.
Specifically, as shown in fig. 1, the piezoelectric thin film composite substrate 100 may include a substrate 130, a piezoelectric thin film layer 110 disposed on the substrate 130, and an isolation layer 120 located between the substrate 130 and the piezoelectric thin film layer 110. In the process of manufacturing the piezoelectric thin-film composite substrate 100 as shown in fig. 1, a silicon wafer substrate may be used as the substrate 130. Next, silicon oxide (SiO) may be deposited on the silicon wafer byx) To form the isolation layer 120. Then, the piezoelectric thin film layer 110 may be formed on the isolation layer 120 through a smart cut process. In the piezoelectric thin film composite substrate 100, since there is a high refractive index difference between the piezoelectric thin film layer 110 and the isolation layer 120, light can be confined in the piezoelectric thin film layer 110. However, in such a structure, when light of different incident angles is transmitted simultaneously (i.e., light of different modes is transmitted) in the piezoelectric thin film layer, light having a small incident angle is easily refracted from the piezoelectric thin film layer having a large refractive index into the silicon oxide spacer having a small refractive index, thereby causing an increase in light transmission loss.
For the above problems, the light transmission loss is usually improved by increasing the thickness of the isolation layer, but the increase of the thickness of the isolation layer may cause the wafer to warp too much and easily cause the film to fall off, thereby affecting the subsequent device processing process. For example, when the subsequent process is a photolithography process, if the substrate is warped too much, the photolithography machine needs to refocus once per step, which seriously affects the efficiency of the photolithography process.
Disclosure of Invention
Technical problem
The invention aims to provide a piezoelectric thin film composite substrate and a preparation method thereof.
An object of the present invention is to provide a piezoelectric thin film composite substrate and a method for manufacturing the same, which can solve at least one of the above problems.
Technical scheme
There is also provided, in accordance with an embodiment of the present invention, a piezoelectric thin film composite substrate, which may include a substrate; the piezoelectric thin film layer is positioned on the substrate; and the isolation layer is positioned between the substrate and the piezoelectric film layer. The isolation layer includes a stack structure in which a plurality of sub-isolation layers having different refractive indices are alternately stacked one on another. Each of the plurality of sub-isolation layers has a refractive index smaller than that of the piezoelectric thin film layer.
In an embodiment according to the present invention, the isolation layer may have a periodic structure, the minimum structural unit of the periodic structure may include a plurality of sub-isolation layers having different refractive indexes and stacked on each other, and the isolation layer may include at least two minimum structural units sequentially stacked.
In an embodiment according to the present invention, the isolation layer may include five minimum structural units sequentially stacked.
In an embodiment according to the present invention, the plurality of sub-isolation layers may include a first sub-isolation layer and a second sub-isolation layer.
In an embodiment according to the present invention, the second sub-isolation layer may have a refractive index greater than that of the first sub-isolation layer.
In an embodiment according to the invention, the first sub-isolation layer comprises SiOxAnd the second sub-isolation layer comprises SiNy。
In an embodiment according to the invention, the first sub-isolation layer comprises SiO2And the second sub-isolation layer comprises Si3N4。
In an embodiment according to the present invention, the plurality of sub-isolation layers further includes a third sub-isolation layer.
In an embodiment according to the present invention, a portion of the isolation layer in contact with the piezoelectric thin film layer may correspond to a sub-isolation layer having a smallest refractive index among the plurality of sub-isolation layers.
In an embodiment according to the present invention, a portion of the isolation layer contacting the substrate may correspond to a sub-isolation layer having a smallest refractive index among the plurality of sub-isolation layers.
In an embodiment according to the present invention, the piezoelectric thin film composite substrate may further include a compensation layer on a bottom surface of the substrate opposite to the upper surface, and the compensation layer may have the same structure as the isolation layer.
In an embodiment according to the present invention, the piezoelectric thin film composite substrate further includes an active layer disposed on the piezoelectric thin film layer. The active layer may include GaN, GaAs, GaSb, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, or InGaAsP.
In an embodiment according to the present invention, the piezoelectric thin film layer may include lithium tantalate, lithium niobate, potassium dihydrogen phosphate, potassium dideuterium phosphate, or quartz.
In an embodiment according to the present invention, the thickness of the isolation layer may be 400nm or more.
In an embodiment according to the present invention, each of the plurality of sub-isolation layers may have a thickness of 200nm to 900 nm.
A method of manufacturing a piezoelectric thin film composite substrate according to an embodiment of the present invention may include: depositing an isolation layer on an upper surface of a substrate; implanting ions into one surface of an original substrate by using an ion implantation method, thereby forming a thin film layer and a residue layer and an implanted layer located between the thin film layer and the residue layer in the original substrate, wherein the implanted ions are distributed in the implanted layer; contacting the surface of the original substrate on which the thin film layer is formed with the upper surface of the isolation layer to form a bonding body; and heating the bonding body to a preset temperature and preserving heat for a preset time to peel the residual material layer from the original substrate, thereby obtaining the piezoelectric film composite substrate comprising the substrate, the isolation layer and the piezoelectric film layer. The isolation layer includes a stack structure in which a plurality of sub-isolation layers having different refractive indices are alternately stacked one on another. Each of the plurality of sub-isolation layers has a refractive index smaller than that of the piezoelectric thin film layer.
In an embodiment according to the present invention, the isolation layer may have a periodic structure, the minimum structural unit of the periodic structure may include a plurality of sub-isolation layers having different refractive indexes and stacked on each other, and the isolation layer may include at least two minimum structural units sequentially stacked.
In an embodiment according to the present invention, the isolation layer may include five minimum structural units sequentially stacked.
In an embodiment according to the present invention, the step of depositing the isolation layer may include: the second sub-isolation layer and the first sub-isolation layer are alternately deposited in sequence on the upper surface of the substrate.
In an embodiment according to the present invention, the second sub-isolation layer may have a refractive index greater than that of the first sub-isolation layer.
In an embodiment according to the invention, the first sub-isolation layer comprises SiO2And the second sub-isolation layer comprises Si3N4。
In an embodiment according to the invention, the method may further comprise: while depositing the isolation layer on the upper surface of the substrate, a compensation layer having the same structure as the isolation layer is deposited on a bottom surface of the substrate opposite to the upper surface.
In an embodiment according to the invention, the method may further comprise: before forming the bonding body, polishing treatment is carried out on the upper surface of the isolation layer.
In an embodiment according to the present invention, a portion of the isolation layer contacting the piezoelectric thin film layer may correspond to the sub-isolation layer having the smallest refractive index.
In an embodiment according to the present invention, a portion of the isolation layer contacting the substrate may correspond to a sub-isolation layer having a smallest refractive index among the plurality of sub-isolation layers.
In an embodiment according to the invention, the method further comprises: after obtaining the piezoelectric thin film composite substrate including the substrate, the isolation layer, and the piezoelectric thin film layer, an active layer including GaN, GaAs, GaSb, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, or InGaAsP is formed on the piezoelectric thin film layer.
The embodiment of the invention also provides the piezoelectric thin film composite substrate prepared by the method.
Advantageous effects
At least the following advantageous effects can be obtained by the piezoelectric thin film composite substrate and the method of manufacturing the same according to the embodiments of the present invention: the isolation layer may be a stacked structure in which layers having different refractive indexes from each other are alternately stacked, so that a quantum well may be formed between the piezoelectric thin film layer and the substrate to reflect light leaked from the piezoelectric thin film layer back to the piezoelectric thin film layer, thereby reducing loss of mode light having a small incident angle; the portion of the isolation layer in contact with the piezoelectric thin film layer may be a layer having a smaller refractive index, or both the portion of the isolation layer in contact with the piezoelectric thin film layer and the portion of the isolation layer in contact with the substrate may be layers having smaller refractive indices, so that a larger refractive index difference between the piezoelectric thin film layer and its adjacent layer can be maintained and optical loss can be reduced; by forming the compensation layer on the bottom surface of the substrate, warpage of the substrate can be prevented; and by forming an active layer on the piezoelectric thin film layer, a composite structure including an active semiconductor as a light emitting layer and a piezoelectric thin film as a waveguide layer or a light modulation layer can be obtained.
Drawings
These and/or other aspects will become apparent and more readily appreciated from the following description of the exemplary embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a sectional view of a piezoelectric thin film composite substrate according to a comparative example;
fig. 2A to 2C are cross-sectional views of a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention;
fig. 3 is a flowchart illustrating a method of manufacturing a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention; and
fig. 4 to 7 are sectional views illustrating a method of manufacturing a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention.
Reference numerals:
100. 200, 200a, 200 b-piezoelectric thin film composite substrate
110. 211-piezoelectric thin film layer 120, 220a, 220 b-isolation layer
130. 230- substrate 240, 240a, 240 b-compensation layer
210-original substrate 211' -thin film layer
212-separation layer 213-residue layer
221-first sub-spacer 222-second sub-spacer
223-third sub-isolation layer 241-first sub-compensation layer
242-second sub-compensation layer 243-third sub-compensation layer
211' -initial piezoelectric film layer
Detailed Description
The principles of the present invention will be described in further detail below with reference to the accompanying drawings and exemplary embodiments so that the technical solutions of the present invention will be clear. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the embodiments of the invention to those skilled in the art. Like reference symbols in the various drawings indicate like elements. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.
Fig. 2A to 2C are cross-sectional views of a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention. Hereinafter, a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention will be described in detail with reference to fig. 2A to 2C.
Referring to fig. 2A, the piezoelectric thin film composite substrate 200 according to an exemplary embodiment of the present invention may include a piezoelectric thin film layer 211, an isolation layer 220, and a substrate 230.
The piezoelectric thin film layer 211 may be on the substrate 230 and overlap the substrate 230. The isolation layer 220 may be disposed between the piezoelectric thin film layer 211 and the substrate 230. The isolation layer 220 may include a stack structure (a stack structure such as a/B/a/B … …, a/B/C/a/B/C … …, B/a/B, A/B/A, B/a/B) in which a plurality of sub-isolation layers having different refractive indices are alternately stacked one on another. Each sub-isolation layer of the isolation layer 220 may have a refractive index smaller than that of the piezoelectric thin film layer 211.
For example, the isolation layer 220 may have a periodic structure (a stacked structure such as a/B/a/B … …, a/B/C/a/B/C … …, etc.) between the substrate 230 and the piezoelectric thin film layer 211, thereby causing the isolation layer 220 to have a periodically varying refractive index in a direction from the substrate 230 to the piezoelectric thin film layer 211. In the smallest structural unit (such as a/B or a/B/C) of the periodic structure, a plurality of sub-isolation layers (such as A, B and/or C) having different refractive indexes may be stacked, and the refractive index of each of the sub-isolation layers in the isolation layer 220 may be smaller than the refractive index of the piezoelectric thin film layer 211. In an embodiment according to the present invention, the isolation layer 220 may include at least two of the above-described minimum structural units sequentially stacked. However, embodiments according to the present invention are not limited thereto, and for example, the isolation layer 220 may be a partially periodic structure (a stacked structure such as B/a/B, A/B/A, B/a/B).
Substrate 230 may be made of Si, lithium niobate (LN, LiNiO)3) Or lithium tantalate (LT, LiTaO)3) Single crystal wafers are formed and can have thicknesses from the micron to millimeter range.
The piezoelectric thin film layer 211 may overlap the substrate 230. The piezoelectric thin film layer 211 may include lithium niobate, lithium tantalate, KDP (potassium dihydrogen phosphate), DKDP (potassium dideuter phosphate), quartz, or the like, and may have a thickness of about 100nm to about 100 μm, a thickness of about 200nm to about 80 μm, a thickness of about 300nm to about 60 μm, a thickness of about 400nm to about 40 μm, a thickness of about 500nm to about 20 μm, a thickness of about 600nm to about 1 μm, or any range defined by these numbers, for example, a thickness of about 500nm to about 60 μm or a thickness of about 300nm to about 40 μm, or the like.
As shown in fig. 2A, an isolation layer 220 may be disposed between the substrate 230 and the piezoelectric thin film layer 211 to isolate the substrate 230 from the piezoelectric thin film layer 211.
As shown in fig. 2A, the isolation layer 220 may include a stack structure in which first sub-isolation layers 221 and second sub-isolation layers 222 are alternately stacked. The first sub-isolation layer 221 and the second sub-isolation layer 222 may have refractive indexes different from each other, for example, the refractive index of the first sub-isolation layer 221 may be smaller than the refractive index of the second sub-isolation layer 22.
Although fig. 2A illustrates only a case where the isolation layer 220 includes the first sub-isolation layer 221 and the second sub-isolation layer 222, embodiments according to the present invention are not limited thereto. For example, in one embodiment, as shown in fig. 2B, the isolation layer 220a of the piezoelectric thin film composite substrate 200a may further include a third sub-isolation layer 223. The isolation layer 220a may include a stack structure in which first sub-isolation layers 221, second sub-isolation layers 222, and third sub-isolation layers 223 are alternately stacked. In another embodiment, the isolation layer 220 may have a partially periodic structure (such as a stacked structure of the second sub-isolation layer 222/the first sub-isolation layer 221/the second sub-isolation layer 222).
Further, a portion (or a top portion) of the isolation layer 220 contacting the piezoelectric thin film layer 211 may correspond to a sub-isolation layer having a smallest refractive index among the isolation layer 220. In this case, a layer of the isolation layer 220 in contact with the piezoelectric thin film layer 211 may be the first sub-isolation layer 221 having a smaller refractive index, and thus a larger refractive index difference between the piezoelectric thin film layer 211 and an adjacent layer may be maintained, thereby reducing optical loss.
Although it is illustrated in fig. 2A that a portion (or a bottom portion) of the isolation layer 220 contacting the substrate 230 is the second sub-isolation layer 221, embodiments according to the present invention are not limited thereto. For example, as shown in fig. 2C, in the piezoelectric thin film composite substrate 200b, a portion of the isolation layer 220b that is in contact with the substrate 230 may also correspond to a sub-isolation layer (i.e., the first sub-isolation layer 221) having the smallest refractive index among the isolation layers 220. In this case, since both the top portion and the bottom portion of the isolation layer 220b are sub-isolation layers having the smallest refractive index in the isolation layer 220b, optical loss can be further reduced.
In an embodiment according to the present invention, the first sub-isolation layer 221 may include silicon oxide (SiO)x) The second sub-isolation layer 222 may include silicon nitride (SiN)y). For example, the first sub-isolation layer 221 may include SiO2The second sub-isolation layer 222 may include Si3N4. However, embodiments according to the inventive concept are not limited thereto, for example, the first and second sub-isolation layers 221 and 222 may be formed of different materials having a refractive index smaller than that of the piezoelectric thin film layer 211, for example, Al2O3Or MgAl2O4(Spinel) and the like.
In addition, the thickness of the isolation layer 220 may be about 400nm or more. When the thickness of the isolation layer 220 is greater than 400nm, light leakage can be effectively prevented. For example, when the isolation layer 220 includes the first sub-isolation layer 221 and the second sub-isolation layer 222, each of the first sub-isolation layer 221 and the second sub-isolation layer 222 may have a thickness of about 200nm to 900nm, a thickness of about 200nm to about 800nm, a thickness of about 300nm to about 850nm, a thickness of about 250nm to about 750nm, a thickness of about 350nm to about 700nm, a thickness of about 400nm to about 650nm, a thickness of about 500nm to about 600nm, or any range defined by these numbers, for example, a thickness of about 500nm to about 900nm or a thickness of about 300nm to about 600nm, and so on.
In the piezoelectric thin film composite substrate 200 described above, since there is a refractive index difference between the sub-spacer layers alternately repeated in the spacer layer 220, a quantum well can be formed between the piezoelectric thin film layer 211 and the substrate 230. Light leaked from the piezoelectric thin film layer 211 can be confined in the quantum well, and since the refractive index of the material forming the quantum well is smaller than that of the piezoelectric thin film layer 211, the light confined in the quantum well can be easily reflected back to the piezoelectric thin film layer. Therefore, the quantum well functions to reflect light leaking from the piezoelectric thin film layer back to the piezoelectric thin film layer 211. Specifically, when light with different incident angles is transmitted in the piezoelectric thin film layer 211 at the same time, if light with a small incident angle leaks from the piezoelectric thin film layer 211 with a large refractive index to the first sub-isolation layer 221 with a small refractive index, the light will continue to propagate into the second sub-isolation layer 222 with a refractive index larger than that of the first sub-isolation layer 221, and then the light will be totally reflected at the interface with the next first sub-isolation layer 221, and repeating in sequence, the totally reflected light can be reflected back to the piezoelectric thin film layer 211 with a maximum refractive index, thereby reducing the loss of mode light with a small incident angle.
In addition, as shown in fig. 2A, the piezoelectric thin film composite substrate 200 may further include a compensation layer 240 disposed on the bottom surface of the substrate 230. The compensation layer 240 may have the same structure as the isolation layer 220, or the compensation layer 240 and the isolation layer 220 may have a symmetrical structure with respect to the substrate 230.
Specifically, as shown in fig. 2A, the compensation layer 240 may include first and second sub-compensation layers 241 and 242 alternately stacked, and the first sub-compensation layer 241 may include silicon oxide (SiO)x) The second sub-compensation layer 242 may include silicon nitride (SiN)y). In another embodiment, as shown in fig. 2B, when the isolation layer 220a includes the third sub-isolation layer 223, the compensation layer 240a may further include a third sub-compensation layer 243. In yet another embodiment, as shown in fig. 2C, the compensation layer 240b also has the same structure when both the top portion and the bottom portion of the isolation layer 220b are sub-isolation layers having the smallest refractive index among the isolation layer 220 b.
In addition, the compensation layer 240 and the isolation layer 220 may be simultaneously formed through the same process, for example, through a Plasma Enhanced Chemical Vapor Deposition (PECVD) process or a Low Pressure Chemical Vapor Deposition (LPCVD) process. Specifically, for example, a sub-isolation layer and a sub-compensation layer may be formed on both sides of the substrate at the same time, and then another sub-isolation layer and another sub-compensation layer may be formed at the same time, so that the isolation layer and the compensation layer on both sides of the substrate have a symmetrical structure to each other, thereby making the stresses on both sides of the substrate symmetrical. After the piezoelectric thin film composite substrate is manufactured, the compensation layer can be removed or can be continuously reserved according to the subsequent process requirements. Therefore, in the embodiment according to the present invention, the compensation layer 240 may suppress warpage of the substrate 230 when the isolation layer 220 is formed.
In the conventional piezoelectric thin film composite substrate, warpage is caused by heterogeneous combination (two thin films made of different materials are combined together, and the shrinkage degree after heating is different due to different thermal expansion coefficients), which affects the subsequent device processing technology. The single crystal thin film composite substrate according to the exemplary embodiment of the present invention may maintain stress symmetry of both faces of the substrate before bonding by forming the compensation layer having the same structure as the isolation layer on the bottom surface of the substrate, and may minimize warpage of the substrate to improve substrate warpage. Therefore, the influence of the warpage on the subsequent process is reduced, and the related measures are not needed to be taken in the subsequent process to reduce the warpage.
In addition, although not shown, the piezoelectric thin film composite substrate 200 according to an embodiment of the present invention may further include an active layer disposed on the piezoelectric thin film layer 211, and thus a composite structure including an active semiconductor as a light emitting layer and a piezoelectric thin film as a waveguide layer or a light modulation layer may be formed. In example embodiments according to the present disclosure, the active layer may be formed of a III-V compound semiconductor. Specifically, the active layer may include GaN, GaAs, GaSb, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, or InGaAsP.
Fig. 3 is a flowchart illustrating a method of manufacturing a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention. A method of manufacturing a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention will be described in detail below with reference to fig. 3.
As shown in fig. 3, a method of manufacturing a piezoelectric thin film composite substrate according to an embodiment of the present invention may include: preparing an original substrate and a substrate; depositing an isolation layer on an upper surface of the substrate and polishing the isolation layer, the isolation layer including a plurality of sub-isolation layers having different refractive indexes and alternately stacked with each other, and simultaneously depositing a compensation layer having the same structure as the isolation layer on a bottom surface of the substrate opposite to the upper surface; implanting ions into one surface of an original substrate by using an ion implantation method, thereby forming a thin film layer, a separation layer, and a residue layer in the original substrate; contacting the isolation layer with the thin film layer of the original substrate, and performing a bonding process on the original substrate and the substrate to form a bonded body; placing the bonding body at a preset temperature for a preset time so as to peel the excess material layer from the original substrate, and further forming an initial piezoelectric film layer; and polishing the initial piezoelectric thin film layer to form a piezoelectric thin film layer with a preset thickness, and further forming the piezoelectric thin film composite substrate comprising the compensation layer, the substrate, the isolation layer and the piezoelectric thin film layer. However, exemplary embodiments according to the present invention are not limited thereto, and for example, a step of forming a compensation layer may be omitted, thereby obtaining a piezoelectric thin film composite substrate including a substrate, an isolation layer, and a piezoelectric thin film layer.
In an exemplary embodiment according to the present invention, the substrate 230 may include lithium tantalate, lithium niobate, or silicon, and the original substrate may include lithium tantalate, lithium niobate, potassium dihydrogen phosphate, potassium dideuter phosphate, or quartz. The substrate 230 may have a size in a range of 3 inches to 12 inches, such as 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, or 12 inches, and the initial thickness of the substrate 230 may be in a range of 200 μm to 500 μm, such as 250 μm, 300 μm, 350 μm, 400 μm, or 450 μm. The substrate 230 and the original base plate may be subjected to a single-side polishing process or a double-side polishing process by using, for example, a chemical mechanical polishing process to obtain a smooth wafer surface. In an exemplary embodiment of the present invention, the substrate 230 may be subjected to a double-side polishing process. In addition, semiconductor-level cleaning may be performed on the polished substrate 230 to obtain a clean surface. Exemplary embodiments of the invention are not limited thereto, and for example, the substrate 230 having a smooth surface may be directly cleaned.
Fig. 4 to 7 are sectional views illustrating a method of manufacturing a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention. A method of manufacturing a piezoelectric thin film composite substrate according to an exemplary embodiment of the present invention will be described in detail below with reference to fig. 4 to 7.
As shown in fig. 4, first, a substrate 230 is prepared, and then an isolation layer 220 and a compensation layer 240 may be formed on an upper surface (or a top surface) and a bottom surface of the substrate 230, respectively, which face away from each other, by a deposition process such as PECVD or LPCVD.
Referring to fig. 4, first sub-isolation layers 221 and second sub-isolation layers 222 may be alternately deposited on an upper surface of a substrate 230 through a deposition process to form an isolation layer 220 having a periodic structure (a structure such as a/B/a … …) or a partially periodic structure (a structure such as a/B/a). In an embodiment according to the present invention, when the isolation layer 220 has a periodic structure, the isolation layer 220 may include a plurality of (e.g., 5) minimum structural units sequentially stacked with the first sub-isolation layer 221/the second sub-isolation layer 222 of the stacked structure being the minimum structural unit. However, embodiments according to the present invention are not limited thereto, and for example, the isolation layer 220 may include a minimum structural unit of less than 5 or more than 5.
During the deposition process, the second sub-isolation layer 222 and the first sub-isolation layer 221 may be alternately deposited on the substrate 230 in sequence. For example, the second sub-isolation layer 222 may be deposited on the substrate 230, and then the first sub-isolation layer 221 may be deposited on the second sub-isolation layer 222, which are repeated in sequence, and finally the top layer of the isolation layer 220 is kept as the first sub-isolation layer 221, thereby forming the isolation layer 220 with a periodic structure. However, the embodiment according to the present invention is not limited thereto, for example, the first sub-isolation layer 221 having a smaller refractive index may be deposited on the substrate 230, and then the second sub-isolation layer 222 may be deposited on the first sub-isolation layer 221, and the above steps may be repeated in sequence, and finally the top layer of the isolation layer 220 is kept as the first sub-isolation layer 221, so as to form the isolation layer 220 having a local periodic structure.
In an embodiment according to the present invention, the first sub-isolation layer 221 and the second sub-isolation layer 222 may include materials different from each other, the refractive index of the first sub-isolation layer 221 may be smaller than the refractive index of the second sub-isolation layer 222, and both the refractive index of the first sub-isolation layer 221 and the refractive index of the second sub-isolation layer 222 are smaller than the refractive index of the piezoelectric thin film layer 211. For example, the first sub-isolation layer 221 may include silicon oxide (SiO)x) And the second sub-isolation layer 222 may include silicon nitride (SiN)y)。
In addition, each of the first and second sub-isolation layers 221 and 222 may have a thickness of about 200nm to about 900 nm. In the deposition process, when the first sub-isolation layer 221 as the top layer of the isolation layer 220 (i.e., the layer of the isolation layer 220 in contact with the piezoelectric thin film layer 211) is deposited, the first sub-isolation layer 221 having a thickness of about 1 μm may be first deposited and then polished so that the first sub-isolation layer 221 as the top layer has a smooth surface while having a thickness of about 200nm to about 900nm, thereby facilitating smooth proceeding of the subsequent bonding process.
As described above, since the isolation layer 220 is formed simultaneously with the compensation layer 240, the isolation layer 220 and the compensation layer 240 have a structure symmetrical to each other, and thus, a detailed description of the compensation layer 240 will be omitted herein.
As shown in fig. 5, an original substrate 210 is first prepared, and then, the original substrate 210 is ion-implanted by an ion implantation method, so that the original substrate 210 is formed to include a thin film layer 211', a residue layer 213, and a separation layer 212 between the thin film layer 211' and the residue layer 213, the implanted ions being distributed within the separation layer 212.
During the ion implantation process, ions (e.g., H) may be utilized+、H2 +、He+Or He2+) Ion implantation is performed on one surface (or such as a surface) of the original substrate 210 to form a separation layer (also referred to as an implant layer) 212 in the original substrate 210. Implanted ions may be distributed within the separation layer 212. The separation layer 212 may divide the original substrate 210 into an upper region and a lower region: one is the area through which most of the implanted ions pass, called the thin film layer 211'; the other is a region where most of the implanted ions do not pass, and is referred to as a residual material layer 213. The thickness of the thin film layer 211' is determined by the energy of ion implantation, etc. For example, in an exemplary embodiment according to the present invention, the ion implantation energy may be about 100 to 800KeV, about 150 to 750KeV, about 170 to 700KeV, about 180 to 650KeV, about 190 to 600KeV, about 200 to 550KeV, about 210 to 500KeV, about 220 to 450KeV, about 230 to 400KeV, about 240 to 350KeV, about 250 to 300KeV, or any range defined by these numbers, such as about 160 to 400KeV, about 180 to 600KeV, or about 200 to 750KeV, etc. In an exemplary embodiment according to the present invention, the ion implantation dose may be about 1 × 1015～1×1017ions/cm2About 1X 1015～6×1016ions/cm2About 1X 1015～4×1016ions/cm2About 2X 1015～1×1017ions/cm2About 4X 1015～1×1017ions/cm2Or within any range defined by these numbers, e.g., about 2X 1015～6×1016ions/cm2Or about 2X 1015～4×1016ions/cm2And so on.
In addition, the ion implantation method may include a conventional ion implanter implantation method, a plasma immersion ion implantation method, and an ion implantation method using a segmented implantation of different implantation temperatures.
Here, the ion implantation is performed for the purpose of implanting a large amount of ions into the surface layer of the original substrate 210, the implanted ions in the separation layer 212 are in an unstable state within the original substrate 210, and the implanted ions are embedded in lattice defects to generate a volume strain, which causes the separation layer to become a stress concentration region, so that the mechanical strength of a portion of the original substrate 210 in the vicinity of the separation layer 212 is reduced.
Next, as shown in fig. 6, the thin film layer 211' of the original substrate 210 and the polished surface of the first sub-spacer layer 221 as the top layer of the spacer layer 220 are brought close to each other at room temperature by using a wafer bonding method, and then bonded together, and pressure is applied thereto to form a bonded body shown in fig. 6. Due to the action of the molecular forces (e.g., van der waals forces) of the surfaces of the thin film layer 211' and the isolation layer 220, the molecules of the two surfaces are in direct contact, thereby forming a bond. However, example embodiments of the present invention are not limited thereto. For example, the bonding body may be formed only by intermolecular force without applying pressure to the two substrates. According to the present invention, the wafer bonding method may be selected from any one of a direct bonding method, an anodic bonding method, a low temperature bonding method, a vacuum bonding method, a plasma enhanced bonding method, and an adhesive bonding method.
Next, as shown in fig. 7, the bond is put into a heating apparatus to be kept at a predetermined temperature for a predetermined time. In this process, the ions in the separation layer 212 chemically react to become gas molecules or atoms and generate tiny bubbles, and as the heating time is prolonged or the heating temperature is increased, the bubbles increase more and more, and the volume of the bubbles increases gradually. When these bubbles are united into one piece, separation of the remnant layer 213 from the separation layer 212 is achieved, thereby forming the initial piezoelectric thin film layer 211 ″, and the initial piezoelectric thin film layer 211 ″ is transferred onto the separation layer 220.
Finally, the initial piezoelectric thin film layer 211 ″ is surface-polished to reduce its thickness to a predetermined size (e.g., 400nm) to obtain a piezoelectric thin film composite substrate 200 (as shown in fig. 2A) including the piezoelectric thin film layer 211, the spacer layer 220, the substrate 230, and the compensation layer 240.
Although not shown, the method of manufacturing the piezoelectric thin film composite substrate according to the embodiment of the present invention may further include forming an active layer on the piezoelectric thin film layer 211, and thus may form a composite structure including an active semiconductor as a light emitting layer and a piezoelectric thin film as a waveguide layer or a light modulation layer. In example embodiments according to the present disclosure, the active layer may be formed of a III-V compound semiconductor. Specifically, the active layer may include GaN, GaAs, GaSb, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, or InGaAsP. Such a composite structure including an active layer can effectively realize optoelectronic integration, i.e., effectively integrate a light emitting function and a light modulating function, and can effectively reduce the volume of the device as compared with a conventional device including a separate light emitting section and a separate light modulating section.
A specific process of manufacturing the piezoelectric thin film composite substrate 200 according to an embodiment of the present invention will be described in detail with reference to the embodiment.
Example 1
First, a silicon wafer substrate having a size of 3 inches and a thickness of 0.4mm was prepared, and had a smooth surface. After completely cleaning the silicon wafer substrate, alternately depositing Si on the upper and bottom surfaces of the silicon wafer substrate facing away from each other by PECVD, respectively3N4Layer and SiO2And (3) a layer.
Specifically, Si is deposited on the upper surface of a silicon wafer substrate3N4Layer, then on Si3N4Depositing SiO on the layer2Layers alternately repeated in sequence to form a stack structure including 5 layers of Si3N4layer/SiO2An isolation layer of the layer. Similarly, Si is alternately deposited on the bottom surface of a silicon wafer substrate3N4Layer and SiO2Layer to form a stack structure including 5 layers of Si3N4layer/SiO2A compensation layer of layers. In the isolation layer and the compensation layer, Si3N4Layer and SiO2Each of the layers may have a thickness of about 500 nm. Furthermore, SiO at the top of the formation of the isolation layer2In the case of layers, SiO may be deposited first, approximately 1 μm thick2A layer, which is then polished to SiO2The layer has a smooth surface (e.g., a surface roughness of less than 0.5nm) while having a thickness of about 500 nm.
Next, a lithium niobate wafer having a size of 3 inches was prepared as an original substrate. The implantation dosage of the lithium niobate wafer is 4 multiplied by 10 by adopting an ion implantation method16ions/cm2Helium ion (He)1+) And the implantation energy is 200 keV. And implanting ions into the lithium niobate wafer to form a thin film layer, a separation layer and a residual material layer. SiO at the top of the isolation layer at room temperature2The layer is bonded with the thin film layer of the lithium niobate wafer to form a bonded body. And (3) preserving the temperature of the bonding body at 350 ℃ for a preset time to realize the stripping of the thin film layer. And polishing the thin film layer to a target thickness by using a Chemical Mechanical Polishing (CMP) method to obtain the lithium niobate piezoelectric film with the nanometer thickness and the piezoelectric film composite substrate comprising the lithium niobate piezoelectric film.
Example 2
First, a silicon wafer substrate having a size of 3 inches and a thickness of 0.4mm was prepared, and had a smooth surface. After the silicon wafer substrate is thoroughly cleaned, Si is alternately deposited on the upper and bottom surfaces of the silicon wafer substrate facing away from each other by LPCVD, respectively3N4Layer and SiO2And (3) a layer.
Specifically, Si is deposited on the upper surface of a silicon wafer substrate3N4Layer, then on Si3N4Depositing SiO on the layer2Layers, which are alternately repeated in sequence, to form a stack structure including 6 layers of Si3N4layer/SiO2An isolation layer of the layer. Similarly, Si is alternately deposited on the bottom surface of a silicon wafer substrate3N4Layer and SiO2Layer to form a stack structure including 6 layers of Si3N4layer/SiO2A compensation layer of layers. In the isolation layer and the compensation layer, Si3N4Layer and SiO2Each of the layers may have a thickness of about 400 nm.
Next, a lithium niobate wafer having a size of 3 inches was prepared as an original substrate. The implantation dosage of the lithium niobate wafer is 4 multiplied by 10 by adopting an ion implantation method16ions/cm2Helium ion (He)1+) And the implantation energy is 200 keV. And implanting ions into the lithium niobate wafer to form a thin film layer, a separation layer and a residual material layer. SiO at the top of the isolation layer at room temperature2The layer is bonded with the thin film layer of the lithium niobate wafer to form a bonded body. And (3) preserving the temperature of the bonding body at 350 ℃ for a preset time to realize the stripping of the thin film layer. And polishing the thin film layer to a target thickness by using a Chemical Mechanical Polishing (CMP) method to obtain the lithium niobate piezoelectric film with the nanometer thickness and the piezoelectric film composite substrate comprising the lithium niobate piezoelectric film.
In example 2, Si of the spacer layer was prepared3N4/SiO2The quantum well with the alternating structure adopts an LPCVD method, and compared with a PECVD preparation method, the Si prepared by the method3N4/SiO2The alternating structure has low H content and low optical transmission loss. In addition, top SiO layer prepared by LPCVD2Surface roughness less than 0.5nm, which is superior to SiO production by PECVD2Surface roughness of the layer, so there is no need to apply to SiO in example 12The polishing process of the layer saves cost and is convenient for controlling quality.
Example 3
First, a silicon wafer substrate having a size of 4 inches and a thickness of 0.4mm was prepared, and had a smooth surface. After the silicon wafer substrate is thoroughly cleaned, Si is alternately deposited on the upper and bottom surfaces of the silicon wafer substrate facing away from each other by LPCVD, respectively3N4Layer and SiO2And (3) a layer.
Specifically, Si is deposited on the upper surface of a silicon wafer substrate3N4) Layer, then on Si3N4Depositing SiO on the layer2Layers alternately repeated in sequence to form a stack structure including 4 layers of Si3N4layer/SiO2An isolation layer of the layer. Similarly, Si is alternately deposited on the bottom surface of a silicon wafer substrate3N4Layer and SiO2Layer to form a stack structure including 4 layers of Si3N4layer/SiO2A compensation layer of layers. In the isolation layer and the compensation layer, Si3N4Layer and SiO2Each of the layers may have a thickness of about 600 nm.
Next, a lithium niobate wafer having a size of 4 inches was prepared as an original substrate. The implantation dosage of the lithium niobate wafer is 4 multiplied by 10 by adopting an ion implantation method16ions/cm2Helium ion (He)1+) And the implantation energy is 200 keV. And implanting ions into the lithium niobate wafer to form a thin film layer, a separation layer and a residual material layer. SiO at the top of the isolation layer at room temperature2The layer is bonded with the thin film layer of the lithium niobate wafer to form a bonded body. And (3) preserving the temperature of the bonding body at 350 ℃ for a preset time to realize the stripping of the thin film layer. And polishing the thin film layer to a target thickness by using a Chemical Mechanical Polishing (CMP) method to obtain the lithium niobate piezoelectric film with the nanometer thickness and the piezoelectric film composite substrate comprising the lithium niobate piezoelectric film.
At least the following advantageous effects can be obtained by the piezoelectric thin film composite substrate and the method of manufacturing the same according to the embodiments of the present invention: the isolation layer may be a stacked structure in which layers having different refractive indexes from each other are alternately stacked, so that a quantum well may be formed between the piezoelectric thin film layer and the substrate to reflect light leaked from the piezoelectric thin film layer back to the piezoelectric thin film layer, thereby reducing loss of mode light having a small incident angle; the portion of the isolation layer in contact with the piezoelectric thin film layer may be a layer having a smaller refractive index, or both the portion of the isolation layer in contact with the piezoelectric thin film layer and the portion of the isolation layer in contact with the substrate may be layers having smaller refractive indices, so that a larger refractive index difference between the piezoelectric thin film layer and its adjacent layer can be maintained and optical loss can be reduced; by forming the compensation layer on the bottom surface of the substrate, warpage of the substrate can be prevented; and by forming an active layer on the piezoelectric thin film layer, a composite structure including an active semiconductor as a light emitting layer and a piezoelectric thin film as a waveguide layer or a light modulation layer can be obtained.
Although the piezoelectric thin film composite substrate and the method of manufacturing the same according to the exemplary embodiments of the inventive concept are described above with reference to the accompanying drawings, the invention is not limited thereto. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the inventive concept.

Claims (22)

1. A piezoelectric thin film composite substrate, comprising:
a substrate;
a piezoelectric thin film layer on the upper surface of the substrate; and
an isolation layer located between the substrate and the piezoelectric thin film layer,
wherein the isolation layer includes a plurality of sub-isolation layers having different refractive indexes and alternately stacked with each other,
wherein a refractive index of each of the plurality of sub-isolation layers is smaller than a refractive index of the piezoelectric thin film layer.
2. The piezoelectric thin film composite substrate according to claim 1, wherein the spacer has a periodic structure, the minimum structural unit of the periodic structure includes a plurality of sub-spacers having different refractive indexes and stacked on each other, and the spacer includes at least two minimum structural units sequentially stacked.
3. The piezoelectric thin film composite substrate according to claim 1, wherein the plurality of sub-isolation layers includes a first sub-isolation layer and a second sub-isolation layer.
4. The piezoelectric thin film composite substrate according to claim 3, wherein the refractive index of the second sub isolation layer is greater than the refractive index of the first sub isolation layer.
5. The piezoelectric thin film composite substrate according to claim 4, wherein the first sub-isolation layer comprises SiOxAnd the second sub-isolation layer comprises SiNy。
6. The piezoelectric thin film composite substrate according to claim 5, wherein the first sub-isolation layer comprises SiO2And the second sub-isolation layer comprises Si3N4。
7. The piezoelectric thin film composite substrate according to claim 3, wherein the plurality of sub-isolation layers further comprises a third sub-isolation layer.
8. The piezoelectric thin film composite substrate according to claim 1, wherein a portion of the isolation layer in contact with the piezoelectric thin film layer corresponds to a sub-isolation layer having a smallest refractive index among the plurality of sub-isolation layers.
9. The piezoelectric thin film composite substrate according to claim 8, wherein a portion of the isolation layer contacting the substrate corresponds to a sub-isolation layer having a smallest refractive index among the plurality of sub-isolation layers.
10. The piezoelectric thin film composite substrate according to claim 1, further comprising a compensation layer on a bottom surface of the substrate opposite to the upper surface, and the compensation layer has the same structure as the isolation layer.
11. The piezoelectric thin film composite substrate according to claim 1, further comprising an active layer disposed on the piezoelectric thin film layer,
wherein the active layer includes GaN, GaAs, GaSb, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, or InGaAsP.
12. The piezoelectric thin film composite substrate according to claim 1, wherein the thickness of the spacer layer is 400nm or more.
13. The piezoelectric thin film composite substrate according to claim 1, wherein each of the plurality of sub-isolation layers has a thickness of 200nm to 900 nm.
14. The piezoelectric thin film composite substrate according to claim 1, wherein the piezoelectric thin film layer comprises lithium tantalate, lithium niobate, potassium dihydrogen phosphate, potassium dideuterium phosphate, or quartz.
15. A method of making a piezoelectric thin film composite substrate, the method comprising:
depositing an isolation layer on an upper surface of a substrate;
implanting ions into one surface of an original substrate by using an ion implantation method, thereby forming a thin film layer and a residue layer and an implanted layer located between the thin film layer and the residue layer in the original substrate, wherein the implanted ions are distributed in the implanted layer;
contacting the surface of the original substrate on which the thin film layer is formed with the upper surface of the isolation layer to form a bonding body; and
heating the bonding body to a preset temperature and preserving heat for a preset time to peel the residual material layer from the original substrate so as to obtain the piezoelectric film composite substrate comprising the substrate, the isolation layer and the piezoelectric film layer,
wherein the isolation layer includes a stack structure in which a plurality of sub-isolation layers having different refractive indices are alternately stacked one on another,
wherein a refractive index of each of the plurality of sub-isolation layers is smaller than a refractive index of the piezoelectric thin film layer.
16. The method of claim 15, wherein the isolation layer has a periodic structure, the minimum structural unit of the periodic structure includes a plurality of sub-isolation layers having different refractive indices and stacked on each other, and the isolation layer includes at least two minimum structural units sequentially stacked.
17. The method of claim 15, wherein depositing an isolation layer comprises: first sub-isolation layers and second sub-isolation layers are alternately deposited in sequence on an upper surface of a substrate.
18. The piezoelectric thin film composite substrate of claim 17, wherein the first sub-isolation layer comprises SiOxAnd the second sub-isolation layer comprises SiNy。
19. The method of claim 18, wherein the first sub-isolation layer comprises SiO2And the second sub-isolation layer comprises Si3N4。
20. The method of claim 15, further comprising: while depositing the isolation layer on the upper surface of the substrate, a compensation layer having the same structure as the isolation layer is deposited on a bottom surface of the substrate opposite to the upper surface.
21. The method of claim 15, further comprising: after obtaining a piezoelectric thin film composite substrate including a substrate, an isolation layer, and a piezoelectric thin film layer, an active layer is formed on the piezoelectric thin film layer,
wherein the active layer includes GaN, GaAs, GaSb, InP, AlAs, AlGaAs, AlGaAsP, GaAsP, or InGaAsP.
22. A piezoelectric thin film composite substrate prepared by the method of any one of claims 15 to 21.
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