CN110246757A - A kind of preparation method of the monocrystal thin films based on cmos circuit substrate - Google Patents
A kind of preparation method of the monocrystal thin films based on cmos circuit substrate Download PDFInfo
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- CN110246757A CN110246757A CN201910442484.8A CN201910442484A CN110246757A CN 110246757 A CN110246757 A CN 110246757A CN 201910442484 A CN201910442484 A CN 201910442484A CN 110246757 A CN110246757 A CN 110246757A
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- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 235000012431 wafers Nutrition 0.000 claims abstract description 131
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 45
- 150000002500 ions Chemical class 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 32
- 230000007797 corrosion Effects 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 17
- 238000000137 annealing Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 239000010410 layer Substances 0.000 description 25
- 239000000377 silicon dioxide Substances 0.000 description 13
- 239000007924 injection Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- -1 helium ion Chemical class 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007521 mechanical polishing technique Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Element Separation (AREA)
Abstract
The invention discloses a kind of preparation methods of monocrystal thin films based on cmos circuit substrate, comprising: the ion implanting of single crystal wafers piece；Removing obtains the monocrystal thin films based on medium wafer substrate after the ion implanting face of single crystal wafers piece is bonded with medium wafer bonding face；Monocrystal thin films surface on medium wafer is bonded with cmos circuit wafer；Corrosion removing medium wafer obtains the monocrystal thin films based on cmos circuit substrate.By the way that lithium niobate monocrystal film to be first bonded on third party's substrate before being bonded with cmos circuit, then lithium niobate monocrystal film is nondestructively bonded on cmos circuit wafer using the method for transfer；High-temperature annealing process is carried out to lithium niobate monocrystal film in advance on media substrate using the mode that film shifts, then lithium niobate monocrystal film is transferred in target cmos circuit platelet wafer substrate, it is possible to reduce the damage to cmos circuit.
Description
Technical field
The present invention relates to technical field of integrated circuits more particularly to a kind of systems of the monocrystal thin films based on cmos circuit substrate
Preparation Method.
Background technique
The niobic acid lithium material of monocrystalline is because it is with characteristics such as unique photoelectricity, piezoelectricity and ferroelectricities, in SAW device, light
Electric modulator, piezoelectric transducer and the application of ferroelectric memory field have received widespread attention.Hong-Kong city is come from the recent period
University, the research team of Harvard University have successfully manufactured lithium niobate base modulator on a hyperfrequency micro chip, the modulation
Smaller, the more efficient, data transmission bauds of body product faster, cost it is lower；And research team's success base from Fudan University
It is utilized in ferro-electricity single crystal film (the including but not limited to monocrystalline such as lithium niobate, bismuth ferrite, lithium tantalate, lead zirconate titanate, strontium bismuth tantalate)
Electricdomain domain wall conductivity theory realizes ultrahigh density data storage, these innovative research work will all be expected to change entire electronics
Industry.Based on the development trend of the above technical field, lithium niobate monocrystal film and CMOS (Complementary Metal
Oxide Semiconductor) integrated technique is the key that realization New technical use, and the bonding technology of the two then has act foot
The effect of weight.But directly the monocrystal thin films of lithium niobate are bonded on cmos circuit wafer, the unbearable list of cmos circuit
The annealing temperature in brilliant film later period；And stripping of the Direct Bonding on cmos circuit wafer, to lithium niobate monocrystal film
Separating process requires also very strict.
Summary of the invention
In view of presently, there are above-mentioned deficiency, the present invention provides a kind of preparation of monocrystal thin films based on cmos circuit substrate
Method is able to solve the influence of the annealing of lithium niobate monocrystal thin film high temperature and high-pressure process to cmos circuit.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
A kind of preparation method of the monocrystal thin films based on cmos circuit substrate, the preparation method comprises the following steps:
The ion implanting of single crystal wafers piece；
Removing, which obtains, after the ion implanting face of single crystal wafers piece is bonded with medium wafer bonding face is based on medium wafer
The monocrystal thin films of piece substrate；
Monocrystal thin films surface on medium wafer is bonded with cmos circuit wafer；
Corrosion removing medium wafer obtains the monocrystal thin films based on cmos circuit substrate.
According to one aspect of the present invention, the preparation method comprises the following steps: in the ion implanting of single crystal wafers piece
One layer of buffer layer is deposited on face.Preferably, certain agent is injected using ion implanting machine equipment on the burnishing surface of single crystal wafers piece
The injection depth of the ion of amount, ion can be arranged by ion implanting machine equipment, and one layer is then deposited on ion implanting face
Buffer layer.
The injection ionic species of the single crystal wafers piece diameter includes hydrogen ion (H+), helium ion (He+), oxonium ion (O2 +).Preferably, using helium ion.
According to one aspect of the present invention, the bonding face of the medium wafer is equipped with the buffer layer of one layer of deposition.
Wherein, cushioning layer material includes silica, silicon nitride, organic matter adhesive.Preferably, buffer layer selects dioxy
SiClx, it is highly preferred that silicon dioxide thickness is 0.2-2um.
According to one aspect of the present invention, the single crystal wafers piece is lithium niobate monocrystal wafer.The lithium niobate monocrystal
Wafer is the wafer for adulterating one of the elements such as Mg, Fe, Zn, In, Sc, Yr element, doping 0-10mol%.
According to one aspect of the present invention, the ion implanting face of the single crystal wafers piece is burnishing surface, have 1 micron and with
Under flatness.
According to one aspect of the present invention, the bonding face of the medium wafer is burnishing surface, with 1 micron and below
Flatness.
According to one aspect of the present invention, the monocrystal thin films based on medium wafer substrate use chemically mechanical polishing
Monocrystal thin films surface.It is bonded under heating pressurization in the ion implanting face of lithium niobate monocrystal wafer with medium wafer bonding face
Together, and by annealing process and be passed through reducing gas by ion reduction be gas discharge, ion implanted layer formation section,
To obtain certain thickness lithium niobate monocrystal film.Then pass through chemical Mechanical Polishing Technique for lithium niobate monocrystal film surface
Polish smooth, flatness is below at 1 micron.
According to one aspect of the present invention, the ion implanting face of the single crystal wafers piece is bonded with medium wafer bonding face
It is to be carried out in the case where heating pressurized conditions, wherein the temperature heated is 100-600 DEG C, application pressure is 0.1MPa-
10MPa.Preferably, heat treatment temperature is 250-350 DEG C, and application air pressure is 0.1MPa, i.e. normal pressure.
According to one aspect of the present invention, monocrystal thin films surface is bonded with cmos circuit wafer on the medium wafer
It is to be carried out in the case where heating pressurized conditions, wherein the temperature heated is 100-400 DEG C, application pressure is 0.1MPa-
10MPa.Preferably, heat treatment temperature is 250-350 DEG C, and application air pressure is 0.1MPa, i.e. normal pressure.
According to one aspect of the present invention, the single crystal wafers piece, medium wafer and cmos circuit wafer diameter are
50-400mm。
The advantages of present invention is implemented: the preparation method of the monocrystal thin films of the present invention based on cmos circuit substrate, packet
It includes: the ion implanting of single crystal wafers piece；It is removed after the ion implanting face of single crystal wafers piece is bonded with medium wafer bonding face
Obtain the monocrystal thin films based on medium wafer substrate；By monocrystal thin films surface on medium wafer and cmos circuit wafer key
It closes；Corrosion removing medium wafer obtains the monocrystal thin films based on cmos circuit substrate.By by lithium niobate monocrystal film with
It is first bonded on third party's substrate before cmos circuit bonding, then using the method for transfer by lithium niobate monocrystal film nondestructively key
It closes on cmos circuit wafer；Lithium niobate monocrystal film is carried out in advance on media substrate using the mode that film shifts high
Then lithium niobate monocrystal film is transferred in target cmos circuit platelet wafer substrate, it is possible to reduce right by warm annealing process
The damage of cmos circuit.The preparation method of monocrystal thin films proposed by the present invention based on cmos circuit substrate, it is convenient and practical, it can be wide
General application electronic device production application of new generation.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the ion implanting schematic diagram of the embodiment of the present invention two；
Fig. 2 is Fig. 1 embodiment of the present invention in lithium niobate ion implanting face depositing insulating layer schematic diagram；
Fig. 3 is the medium wafer substrate schematic diagram according to Fig. 1 embodiment of the present invention；
Fig. 4 is the bonding schematic diagram according to Fig. 1 embodiment of the present invention；
Fig. 5 is lithium niobate monocrystal film signal on medium wafer substrate after the removing according to Fig. 1 embodiment of the present invention
Figure；
Fig. 6 is the cmos circuit wafer schematic diagram according to Fig. 1 embodiment of the present invention；
Fig. 7 is lithium niobate monocrystal on cmos circuit wafer and medium wafer substrate according to Fig. 1 embodiment of the present invention
Film is bonded schematic diagram；
Fig. 8 is according to lithium niobate monocrystal film schematic diagram on the cmos circuit wafer after Fig. 1 embodiment of the present invention transfer；
Fig. 9 is one method schematic diagram of the embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment one
As shown in figure 9, a kind of preparation method of the monocrystal thin films based on cmos circuit substrate, the preparation method include with
Lower step:
Step S1: the ion implanting of single crystal wafers piece；
The ion of ion implanting machine equipment injection doses, the injection of ion are used on the burnishing surface of single crystal wafers piece
Depth can be arranged by ion implanting machine equipment；Injecting ionic species includes hydrogen ion (H+), helium ion (He+), oxonium ion
(O2 +)。
In practical applications, the single crystal wafers piece is lithium niobate monocrystal wafer.The lithium niobate monocrystal wafer is
Adulterate the wafer of one of the elements such as Mg, Fe, Zn, In, Sc, Yr element, doping 0-10mol%.
In practical applications, one layer of buffer layer is deposited on the ion implanting face of single crystal wafers piece；Cushioning layer material includes
Silica, silicon nitride, organic matter adhesive.Preferably, buffer layer selects silica, it is highly preferred that silicon dioxide thickness
For 0.2-2um.
Step S2: removing, which obtains, after the ion implanting face of single crystal wafers piece is bonded with medium wafer bonding face is based on matchmaker
The monocrystal thin films of mesomorphic wafer substrate；
One is bonded under heating pressurization in the ion implanting face of lithium niobate monocrystal wafer and medium wafer bonding face
It rises, and passing through annealing process and being passed through reducing gas for ion reduction is gas release, forms section in ion implanted layer, thus
Obtain certain thickness lithium niobate monocrystal film.Then lithium niobate monocrystal film surface is polished by chemical Mechanical Polishing Technique
Smooth, flatness is below at 1 micron.
In practical applications, it is to heat that the ion implanting face of the single crystal wafers piece is bonded with medium wafer bonding face
It is carried out under pressurized conditions, wherein the temperature heated is 100-600 DEG C, application pressure is 0.1MPa-10MPa.Preferably,
Heat treatment temperature is 250-350 DEG C, and application air pressure is 0.1MPa, i.e. normal pressure.
In practical applications, the bonding face of the medium wafer is equipped with the buffer layer of one layer of deposition, cushioning layer material
Including silica, silicon nitride, organic matter adhesive.Preferably, buffer layer selects silica, it is highly preferred that silica
With a thickness of 0.2-2um.
Step S3: monocrystal thin films surface on medium wafer is bonded with cmos circuit wafer；
Lithium niobate monocrystal film surface and the read-write cmos circuit wafer with certain logic function on medium wafer
Surface bond, when bonding, need heating pressurized conditions.The bonding face of the cmos circuit piece be burnishing surface, have 1 micron and
Flatness below.
In practical applications, it is to heat that monocrystal thin films surface is bonded with cmos circuit wafer on the medium wafer
It is carried out under pressurized conditions, wherein the temperature heated is 100-400 DEG C, application pressure is 0.1MPa-10MPa.Preferably,
Heat treatment temperature is 250-350 DEG C, and application air pressure is 0.1MPa, i.e. normal pressure.
Step S4: corrosion removing medium wafer obtains the monocrystal thin films based on cmos circuit substrate.
Corrosion removing medium wafer, leaves lithium niobate monocrystal film in cmos circuit wafer surface.
In practical applications, the single crystal wafers piece, medium wafer and cmos circuit wafer diameter are 50-400mm.
Embodiment two
Fig. 1 is ion implanting stage schematic diagram of the invention, and lithium niobate monocrystal wafer (101) is doping 3mol% in figure
4 inches of single crystal wafers of Mg, (0mol%Mg refers to no any mix in 0-10mol%Mg for doping range in some embodiments
It is miscellaneous).Single-chip in the present embodiment is with a thickness of 700um, it should be recognized that and the present invention does not require the thickness of lithium niobate, as long as
Can be used to ion implanting thickness all can, as 50um-5mm in the present invention all can be used.Injection ion in the present embodiment
For helium ion (He+), injection ion in some embodiments can be hydrogen ion (H+), oxonium ion (O2 +).The injection of ion
Depth can have reached the target depth of setting by the energy adjustment of control injection.Injection depth in the embodiment is
850nm.In this embodiment, certain thickness silica is deposited after ion implanting on ion implanting face (102), Fig. 2 is should
Embodiment uses the SiO of plasma enhancing physical vapour deposition (PVD) (PECVD) method deposition 500nm thickness after ion implantation2
(103), chemical mechanical polish process deposition surface and is after deposition is complete carried out, makes surfacing, the bonding as next step
Face.In other embodiments, deposition SiO is not needed2, and use lithium niobate directly as bonding face.
Fig. 3 is the medium wafer substrate of Fig. 1 embodiment, in this embodiment, the silicon that medium wafer substrate is 4 inches
(Si) wafer (104), medium wafer substrate can be quartz wafer, gallium nitride (GaN), indium phosphide in some embodiments
(InP), the wafers such as lithium niobate (LiNbO3).In this embodiment, one layer of 1um thickness of extension on 4 inches of Si wafer
SiO2(105).In some embodiments, the not no epitaxial layer of SiO2, and SiO in other embodiments2Layer be using
PECVD, physical vapour deposition (PVD) (PVD), magnetron sputtering or chemical vapor deposition (CVD) deposit one layer of SiO2, and depositing
Chemically mechanical polishing (CMP) technology polished surface, the bonding face of the medium wafer substrate as next step are used at rear.
Fig. 4 is the lithium niobate bonding face of embodiment and the bonding schematic diagram in medium wafer substrate bonding face described in Fig. 1.Figure
Middle embodiment is tipped upside down on lithium niobate substrate on medium wafer substrate, is existed in a standard atmospheric pressure (0.1MPa) and temperature
It is bonded two surfaces at 300 DEG C, two bonding faces are sticked together using the active force between bonding face, after bonding, are being restored
Atmosphere under by the ion reduction of lithium niobate injection face be gas and injection face escape, injection face formed gap, realize niobium
The removing of sour lithium monocrystal thin films, the lithium niobate monocrystal film surface stayed on medium wafer substrate after removing is coarse, uses CMP
Technology by surface polishing to target thickness and guarantee it is smooth, as shown in figure 5, final lithium niobate monocrystal film in this embodiment
With a thickness of 300nm (102).In some embodiments, according to the performance of bonding face, air pressure when bonding is adjustable, and range is
0.1MPa~10MPa.Temperature regulating range is (100-600 DEG C).In this embodiment, the niobium obtained on medium wafer substrate
Sour lithium monocrystal thin films can carry out the annealing of certain condition according to the quality of film.In this embodiment, medium wafer
A layer insulating, such as silica, and CMP planarization are deposited as again on its surface after acquisition lithium niobate monocrystal film on piece substrate
The bonding face of secondary bonding.One layer insulating of deposition is not needed then in some embodiments.
Fig. 6 is the cmos circuit wafer (target wafer piece 106) of Fig. 1 the embodiment described, and diameter is 4 inches, and
Surface deposits a protective layer and is used as bonding face, and SiO is used in the embodiment2As bonding face (107), and the CMP before bonding
Polishing makes surfacing.
Fig. 7 is that the cmos circuit piece of embodiment described in Fig. 1 is bonded with lithium niobate monocrystal film on medium wafer substrate
Schematic diagram, embodiment is that lithium niobate monocrystal film on medium wafer substrate is tipped upside down on cmos circuit on piece in figure, at one
Standard atmospheric pressure (0.1MPa) and temperature are bonded two surfaces at 300 DEG C, using the active force between bonding face by two keys
Conjunction face sticks together.In some embodiments, according to the performance of bonding face, air pressure when bonding is adjustable, range 0.1MPa
~10MPa.Temperature regulating range is (100-400 DEG C).Then use the method for wet etching by medium wafer substrate desquamation
Removal.
The final structure that Fig. 8 is formed after the transfer for embodiment described in Fig. 1, i.e., realize niobic acid on cmos circuit wafer
The preparation of lithium monocrystal thin films.
The advantages of present invention is implemented: the preparation method of the monocrystal thin films of the present invention based on cmos circuit substrate, packet
It includes: the ion implanting of single crystal wafers piece；It is removed after the ion implanting face of single crystal wafers piece is bonded with medium wafer bonding face
Obtain the monocrystal thin films based on medium wafer substrate；By monocrystal thin films surface on medium wafer and cmos circuit wafer key
It closes；Corrosion removing medium wafer obtains the monocrystal thin films based on cmos circuit substrate.By by lithium niobate monocrystal film with
It is first bonded on third party's substrate before cmos circuit bonding, then using the method for transfer by lithium niobate monocrystal film nondestructively key
It closes on cmos circuit wafer；Lithium niobate monocrystal film is carried out in advance on media substrate using the mode that film shifts high
Then lithium niobate monocrystal film is transferred in target cmos circuit platelet wafer substrate, it is possible to reduce right by warm annealing process
The damage of cmos circuit.The preparation method of monocrystal thin films proposed by the present invention based on cmos circuit substrate, it is convenient and practical, it can be wide
General application electronic device production application of new generation.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those skilled in the art is in technical scope disclosed by the invention, and any changes or substitutions that can be easily thought of, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of protection of the claims
It is quasi-.
Claims (10)
1. a kind of preparation method of the monocrystal thin films based on cmos circuit substrate, which is characterized in that the preparation method include with
Lower step:
The ion implanting of single crystal wafers piece；
Removing is obtained after the ion implanting face of single crystal wafers piece is bonded with medium wafer bonding face is served as a contrast based on medium wafer
The monocrystal thin films at bottom；
Monocrystal thin films surface on medium wafer is bonded with cmos circuit wafer；
Corrosion removing medium wafer obtains the monocrystal thin films based on cmos circuit substrate.
2. the preparation method of the monocrystal thin films according to claim 1 based on cmos circuit substrate, which is characterized in that described
Preparation method on the ion implanting face of single crystal wafers piece the following steps are included: deposit one layer of buffer layer.
3. the preparation method of the monocrystal thin films according to claim 1 based on cmos circuit substrate, which is characterized in that described
The bonding face of medium wafer is equipped with the buffer layer of one layer of deposition.
4. the preparation method of the monocrystal thin films according to claim 1 based on cmos circuit substrate, which is characterized in that described
Single crystal wafers piece is lithium niobate monocrystal wafer.
5. the preparation method of the monocrystal thin films according to claim 1 based on cmos circuit substrate, which is characterized in that described
The ion implanting face of single crystal wafers piece is burnishing surface, has 1 micron and flatness below.
6. the preparation method of the monocrystal thin films according to claim 1 based on cmos circuit substrate, which is characterized in that described
The bonding face of medium wafer is burnishing surface, has 1 micron and flatness below.
7. the preparation method of the monocrystal thin films according to claim 1 based on cmos circuit substrate, which is characterized in that described
Monocrystal thin films based on medium wafer substrate use chemically mechanical polishing single-crystal film surface.
8. according to claim 1 to the preparation method of the monocrystal thin films based on cmos circuit substrate described in one of 7, feature exists
In, the ion implanting face of the single crystal wafers piece is bonded with medium wafer bonding face to be carried out in the case where heating pressurized conditions,
The temperature wherein heated is 100-600 DEG C, and application pressure is 0.1MPa-10MPa.
9. according to claim 1 to the preparation method of the monocrystal thin films based on cmos circuit substrate described in one of 7, feature exists
In, monocrystal thin films surface is bonded with cmos circuit wafer on the medium wafer is carried out in the case where heating pressurized conditions,
The temperature wherein heated is 100-400 DEG C, and application pressure is 0.1MPa-10MPa.
10. according to claim 1 to the preparation method of the monocrystal thin films based on cmos circuit substrate described in one of 7, feature
It is, the single crystal wafers piece, medium wafer and cmos circuit wafer diameter are 50-400mm.
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| CN111834279A (en) * | 2020-06-29 | 2020-10-27 | 中国科学院上海微系统与信息技术研究所 | Temporary bonding and debonding method, slide glass structure and application |
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