CN101170089A - A contact structure with flexible protruding block and testing area and its making method - Google Patents
A contact structure with flexible protruding block and testing area and its making method Download PDFInfo
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- CN101170089A CN101170089A CNA2006101371767A CN200610137176A CN101170089A CN 101170089 A CN101170089 A CN 101170089A CN A2006101371767 A CNA2006101371767 A CN A2006101371767A CN 200610137176 A CN200610137176 A CN 200610137176A CN 101170089 A CN101170089 A CN 101170089A
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- projection
- contact point
- test section
- elastic projection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
The invention relates to a connection joint structure with an elastic projection and a test area and a manufacture method thereof. The elastic projection is formed on a conductive contact point of a silicon chip or a circuit board, with high polymer material as a core and wrapped by the conductive material, positioned on one side of the connection point structure, in order to facilitate the conductive points including the projection and the test area simultaneously, wherein, the test area can provide outside function test and overcome the shortcoming of wrapped metal layer damaged when directly test on the elastic projection by the prior art.
Description
Technical field
The invention provides a kind of contact point structure and its manufacture method, be meant structure and its manufacture method of the electrically conductive elastic projection of the skew that on the I/O contact of Silicon Wafer (wafer), forms especially with elastic projection and test section.
Background technology
In forming highdensity integrated circuit fields, chip needs highly reliable physical structure and electrical structure, in order in small scope, to make highdensity integrated circuit structure, as high-resolution liquid crystal panel, the control IC that wherein is used to drive also is to need dense arrangement, so on wafer, utilize metal coupling (bump) as conductive junction point also just in response to and give birth to, be used for the less encapsulating products of volume because be used for the metal coupling of IC signal contact, be fit to high pin and count the encapsulation of IC product, and do not use the technology of traditional routing (bonding) or lead-in wire (lead).Wherein the projection kind has the plumbous projection of golden projection (Gold Bump), eutectic Solder Bumps (Eutectic Solder Bump) and high slicker solder (High Lead Solder Bump) etc.
Promptly disclosed early than No. 4749120 patent of the U.S. and to have utilized golden projection as the conductive media between integrated circuit (IC) chip (ICchip) and base material; but but when the cohesive process (as pressing) of integrated circuit (IC) chip and base material, can produce the flaw that makes chip rupture; because the pressing process can produce a bounce of recovering reset condition; cause the problem of above-mentioned breaking (crack); so known technology has designed rubber-like conductive particle or other material, the flaw that can avoid the pressing process to produce.
Fig. 1 is a common technology United States Patent (USP) the 5th; 707; No. 902 projection cube structure generalized sections that are formed on the circuit board that disclose; wherein primary structure has the metal gasket (pad) 16 that is formed on the base material 1 and the passivation layer (passivation layer) 18 of protective effect is arranged, and the projection cube structure that is formed on the base material (substrate) 1 is a polymer (polymer) material 12 and coats its outer conductive metal layer 14.Bounce when above-mentioned polymeric material 12 can lower combining between base material and circuit board.
The conductive lug structure of No. 5477087 disclosed electronic building brick of known technology such as United States Patent (USP) (Bump electrode for connecting electronic components), please referring to the conductive electrode structural profile schematic diagram that is used on the circuit board shown in Figure 2, show in this electrode structure that a salient pole 20 is formed on the IC chip 21, other comprises the aluminum electrode 22 that is formed on the IC chip 21, the metal gasket of this formation (pad) can be used as the media that conducts electricity between projection and following circuit, and by an insulating barrier 23 coatings, 23 of the insulating barriers that other has a barrier metal layer (barrier-metal layer) 24 to be formed to make through etching, salient pole 20 structures include resin (resin) 25 and microvoid hole 26 wherein, and the outer metal level 27 as the conduction use that coats.The above-mentioned resin 25 that is arranged in the salient pole 20 is an elastic construction with wherein microvoid hole (micro void) 26, produces in the time of can avoiding using the chip of this salient pole 20 or circuit board to combine with other assembly and damages.
Known technology such as United States Patent (USP) the 5th are more arranged, 508, No. 228 elastic conductive projections that are used for integrated circuit (IC) chip that disclose, the three-dimensional view of conductive projection as shown in Figure 3, it is shown as the part of integrated circuit (IC) chip 30, it includes I/O (I/O) contact that a plurality of conductive projections 31 form, each conductive projection 31 is the conductive structure of convex, comprise top surface 34 and the side structure 36 that is connected in graphic, borrowing has polycrystalline substance (base) 38 to connect the connection gasket (bond pad) 33 that joins with chip, and this conductive projection 31 promptly connects the lead-in wire 32 of integrated circuit (IC) chip 30 by connection gasket 33.Above-mentioned conductive projection 31 is to make with polymer or macromolecular material because of the core more, and can produce rubber-like character.
The disclosed projection cube structure of above-mentioned each known technology need pass through various testing electrical property when dispatching from the factory, because it is extremely thin wherein to be coated on the metal level of elastic projection structural outer, may be destroyed when probe touches, so known technology such as Taiwan patent announcement number 324847 disclosed a kind of composite projection structures that are used for integrated circuit are arranged, as shown in Figure 4, it is the I/O contact point structure that applies to integrated circuit, the projection cube structure of complex form is formed at a base material 40 tops, one input/output terminal pad 42 is arranged on the base material 40, coating one deck passivation layer 41 on it forms a first metal layer 43 on input/output terminal pad 42 and passivation layer 41.Then, the composite projection 44 of patterned (patterning) is formed on the first metal layer 43, and departs from input/output terminal pad 42 tops, afterwards, forms second metal level 45 again on the first metal layer 43 and composite projection 44.44 of above-mentioned composite projections form a hatch frame (opening), as being electrically connected of understructure and other electronic building brick, and can be used as the usefulness of probe test, but this structure uses 43,45 double layer of metal increase process complexity, and etching not exclusively causes short circuit easily in high density etch process.
Summary of the invention
Known technology to be used to the projection that conducts electricity and may to produce structural destruction when other electronic building brick of pressing in order to solve on the base material, be to use macromolecular material to coat the conductive projection that one deck conductive layer forms again, so still may be because touched by probe and destroyed in when test, though still have known technology to disclose the projection cube structure that is used for probe test, but the contact point structure that is different from known technology proposed by the invention only has one deck to be coated in the conductive metal layer of projection cube structure, and still provides a conducting metal mat structure that has projection cube structure and test section simultaneously at above-mentioned shortcoming.
The present invention is a kind of contact point structure and its manufacture method with elastic projection and test section, this elastic projection is on the conductive junction point that is formed on Silicon Wafer or the circuit board, for being core by macromolecular material, and elastic projection for the electric conducting material coating, wherein preferred embodiment is a side that is arranged at this contact point structure, makes it to comprise simultaneously projection and test section.
The preferred embodiment of the disclosed contact point structure of the present invention is the metal gasket that Silicon Wafer is used for the I/O contact, making becomes the metal gasket that has elastic projection and test section simultaneously, wherein the surface metal of elastic projection provides electric connection, and the test section then provides testing needle to detect and uses.
Process implementing example of the present invention comprises preparation one base material earlier, wherein has this contact point structure at least, be coated with macromolecular material afterwards on this contact point structure, again with development/etching means etching macromolecular material, wherein form an elastic projection without development/etching part, and form a test section through development/etching part, last coating layer of conductive material, make this elastic projection form a conductive projection, so this conductive projection and this test section electrically connect with this layer electric conducting material, make test section and conductive projection conducting, when making the electrical characteristic of test contacts structure, can not destroy the electric conducting material of coating on the conductive projection.
Another embodiment of technology of the present invention comprises preparation one Silicon Wafer earlier; it has had one as the metal gasket of input/output terminal and the passivation layer of a protection Silicon Wafer main body; be coated with a macromolecular material again on the metal gasket of chip; follow this macromolecular material of development/etching; make without development/etching part and form an elastic projection; and form a test section through development/etching part; make a dimpling dot structure afterwards on this elastic projection; the coating conductive metal layer is on wherein elastic projection and test section again; and elastic projection forms a conductive projection; whereby; this conductive projection and this test section electrically connect with this layer conductive metal layer; make this test section and this conductive projection conducting, utilize the electrical characteristic that this test section can this contact point structure, and can not destroy the conductive metal layer of coating on this conductive projection.
Description of drawings
Fig. 1 is formed at projection cube structure generalized section on the circuit board for common technology;
Fig. 2 is a common technology conductive electrode structural profile schematic diagram;
Fig. 3 is formed at conductive projection schematic perspective view on the integrated circuit (IC) chip for common technology;
Fig. 4 is the disclosed projection cube structure schematic diagram of known technology;
Fig. 5 is the glass baseplate of application contact point structure of the present invention and the schematic diagram of chip;
Fig. 6 has the contact point structure embodiment schematic diagram of elastic projection and test section for the present invention;
Fig. 7 A is the end view of contact point structure embodiment of the present invention;
Fig. 7 B to Fig. 7 D is depicted as the embodiment schematic diagram of contact point structure of the present invention;
Fig. 8 A is the schematic diagram that probe is contacted the test section of contact point structure of the present invention with Fig. 8 B;
Fig. 9 A to Fig. 9 C is depicted as the embodiment schematic perspective view of contact point structure of the present invention;
Figure 10 A to Figure 10 F has the embodiment schematic diagram of the contact point structure of elastic projection and test section for the present invention;
Figure 11 A and Figure 11 D are shown as the embodiment schematic diagram of contact point structure of the present invention;
Figure 12 is the embodiment schematic diagram of contact point structure of the present invention;
Figure 13 A and Figure 13 B are arranged in embodiment schematic diagram on the base material for contact point structure of the present invention;
Figure 14 is arranged in embodiment schematic diagram on the base material for contact point structure of the present invention;
Figure 15 is a contact point structure process chart of the present invention;
Figure 16 is a contact point structure process chart of the present invention.
Symbol description:
Passivation layer 18
Polymeric material 12
Conductive metal layer 14
Salient pole 20
IC chip 21
Microvoid hole 26
Integrated circuit (IC) chip 30
Top surface 34
Side structure 36
Polycrystalline substance 38
Connection gasket 33
Lead-in wire 32
Input/output terminal pad 42
The first metal layer 43
Glass baseplate 50
Chip 54,54 '
Circuit board 52,52 '
High polymer elastic projection 61
Test section 65,712,95,117,133
Passivation layer 67
Electric conducting material 63
Integrated circuit (IC) chip 70
High polymer elastic projection 73
High polymer elastic projection part side 701
High polymer elastic projection 82,83
High polymer elastic projection 112
Dimpling dot structure 115
High polymer elastic projection 122
Embodiment
For overcoming known disadvantage, comprise breaking that the generation bounce causes when having because of pressing easily, or test produce test because there being the precipitous structure of particular test zone or conductive salient point difficult, the present invention promptly discloses a kind of contact point structure and its manufacture method with elastic projection and test section.Wherein elastic projection is formed on the conductive junction point (as input/output terminal) on integrated circuit (IC) chip (IC chip) or the circuit board (PCB), for being core by macromolecular material or polymer (polymer), and elastic projection for the electric conducting material coating, produce the problem of breaking when avoiding joint technology, wherein most preferred embodiment is only to use one deck conductive metal layer, and this elastic projection is arranged at the part of this contact point structure, promptly depart from contact point structure and form projection, make contact point structure comprise projection and test section simultaneously, wherein the test section can provide outside functional test, exempts the shortcoming that can destroy the metal level that coats on it when known technology is directly tested in high polymer elastic projection district.
Known flip-chip (Flip Chip) technology is used in the manufacturing process of LCD, because wherein base material is glass material mostly, use a kind of technology that directly bare chip (bare chip) is connected in glass baseplate, be called glass Flip-Chip Using (Chip on Glass, COG), so, can reduce the electronic signal transmission distance between chip and base material, be useful in the encapsulation of high-speed assembly, also can dwindle the size after the Chip Packaging, improve packaging density and weight reduction and make display floater more frivolous, more can be in response to high-resolution display floater requirement.
As shown in Figure 5, be the part of the glass baseplate 50 of LCD in graphic, each is provided with the chip of a plurality of chip for driving (driver IC) 54,54 ' or the transmission of other signal the base material both sides in above-mentioned glass Flip-Chip Using mode, so as to being electrically connected to circuit board 52, on 52 '.The contact point structure that the chip of each bridge circuit plate 52,52 ' and glass baseplate 50 can utilize the present invention to have elastic projection and test section is electrically connected mutually, and wherein embodiment as shown in Figure 6.
Fig. 6 shows one of embodiment of the invention, it discloses a kind of metal gasket (pad) 60 that has high polymer elastic projection 61 and test section 65 simultaneously, metal gasket 60 is for being arranged at the contact of base material 6 tops, the conductive junction point that is connected with other electronic building brick as the I/O contact of integrated circuit (IC) chip, as circuit board.The structure of icon comprises the one or more metal gaskets 60 that are arranged at base material 6 surfaces, and one embodiment provides the electric connection of base material 6 with other electronic building brick; The preferred embodiment of base material 6 is an integrated circuit (IC) chip, and its top coating one deck passivation layer (passivation) 67 is arranged at the periphery of aforesaid metal gasket 60, and promptly metal gasket 60 is exposed to the part that passivation layer 67 does not coat.In this example, high polymer elastic projection 61 for pyramid, the top end surface of this high polymer elastic projection 61 and other parts more are coated with electric conducting material 63, so as to the assembly of conducting metal gasket 60 with other contact tab, high polymer elastic projection 61 is arranged at the surface local zone of aforesaid metal gasket 60, wherein the zone that is not covered by this high polymer elastic projection 61 provides the test probe engaged test to use as test section 65.The electric conducting material 63 of above-mentioned coated high molecular elastic projection 61 also is coated in the test section 65 of metal gasket 60, so as to conducting projection 61 and metal gasket 60.Above-mentioned high polymer elastic projection 61 forms an elastic conductive projection with the electric conducting material 63 of its coating, shows adjacent structure side by side among the figure, but also can be arranged at the optional position that (perhaps can cross over out metal gasket 60 zones of living in) in this metal gasket 60.
Fig. 7 A is shown as the end view of embodiment as shown in Figure 6, be a kind of metal gasket that has high polymer elastic projection and test section simultaneously, square structure is an integrated circuit (IC) chip 70 under this embodiment, and its surface has metal gasket 75, provides the electric connection of chip and other electronic building brick to use.Passivation layer (passivation) 74 is arranged at aforesaid metal gasket 75 peripheries, and so as to protection integrated circuit (IC) chip 70 structures, 75 of metal gaskets are to be revealed in outside the passivation layer 74.Then, high polymer elastic projection 73 is placed in the surface local zone of aforesaid metal gasket 75, the embodiment of icon is an end of metal gasket 75, and the zone that metal gasket 75 is not covered by aforesaid high polymer elastic projection 73 provides the test probe engaged test to use as test section 712.Conductive layer 71 is formed at end face 731 surfaces of high polymer elastic projection 73, extends and surface, metal gasket 75 top through the side 732 of high polymer elastic projection 73, so high polymer elastic projection 73 borrows conductive layer 71 to be connected to aforesaid metal gasket 75.
Fig. 7 B is depicted as the embodiment schematic diagram of above-mentioned contact point structure, show any zone that high polymer elastic projection 73 can be placed on the metal gasket 75, or regional area to cover also be passable above the passivation layer 74, promptly the material of part high polymer elastic projection 73 covers to passivation layer 74.
Above-mentioned Fig. 7 A shows that high polymer elastic projection 73 edges cover are at one end above the passivation layer 74, and Fig. 7 B shows high polymer elastic projection 73 edges and keeps a segment distance with passivation layer 74, and Fig. 7 C shows that then high polymer elastic projection 73 edges cover are some more at passivation layer 74 above-mentioned Fig. 7 A.
Fig. 7 D shows that high polymer elastic projection 73 edges cover are on passivation layer 74, simultaneously, high polymer elastic projection 73 part sides (701) or part top surface do not have conductive layer 71, because 71 of the conductive layers of coating on the high polymer elastic projection 73 need surface conductance layer 71 conducting of side 732 to metal gasket 75, promptly to reach the function of electric connection.In other words, the conductive layer 71 of the end face 731 of high polymer elastic projection 73 borrows conductive layer 71 conductings through side 732 to the test section (712).So the peripheral surface of high polymer elastic projection 73 can be the peripheral conductive layer 71 that all covers, and also can be that the part is coated with conductive layer 71, the both can reach the function that electrically conducts.
Fig. 8 A is the schematic diagram with the test section 712 of probe 80 contacts contact point structure provided by the present invention, the disclosed contact point structure that has elastic projection and test section simultaneously of the present invention is the contact point structure that improves known technology, the many nothings of the contact point structure of known technology provide the part of being convenient to test, more because the conductive layer on the high polymer elastic projection 73 (micron order following) as thin as a wafer, easily because probe contact and this part easily is damaged during test, the conductive layer 71 of the test section 712 in graphic be through metal gasket 75 and conducting in the Silicon Wafer or the circuit board of below, test can conveniently be provided, and the conductive layer 71 of 73 coatings of high polymer elastic projection is damaged.
Fig. 8 B is shown as that two ends all are provided with high polymer elastic projection 82 on metal gasket 75,83 schematic diagram, in metal gasket 75 and high polymer elastic projection 82, on 83 with the electric conducting material coating, form conductive layer 81, this routine disclosed structure is improved the contact point structure of known technology, and probe 80 can borrow 82,83 formed test sections 812 of two high polymer elastic projections of contact to carry out testing electrical property.Test section 812 in graphic be through metal gasket 75 and conducting in the below base material, as Silicon Wafer 70, conveniently provide test, and the conductive layer 81 of 82,83 coatings of high polymer elastic projection is damaged.
Fig. 9 A to Fig. 9 C shows other embodiments of the invention aspect; wherein base material 9 can be Silicon Wafer or circuit board; wherein metal gasket 90 is for connecting the input/output terminal of external electronic components; comprising test section 95 and conductive projection (91; 91 '; 91 "), the preferred embodiment of conductive projection (91,91 '; 91 ") is to be core with the macromolecular material; the contact point structure that is coated in conductive layer again; and the conductive layer of surperficial coating extends to 95 surfaces, test section, makes conductive projection (91,91 '; 91 " testing electrical property) can be replaced by test section 95; reach the damage of being convenient to test and protection conductive projection (91,91 ', 91 ") probe contact when avoiding detecting.
And conductive projection 91 ' shown in Fig. 9 B rearrange matrix distribution for many elastic projections, also for improving electrically contact reliability.
Fig. 9 C then is with conductive projection 91 " volume do big; provide bigger top surface area, as shown in the figure, conductive projection 91 " structure below crossed over out metal gasket 90, and cover to base material 9 the electrical contact reliability when this structure also can improve follow-up the use.
Figure 10 A to Figure 10 F has the embodiment schematic diagram of the contact point structure of elastic projection and test section for the present invention.Wherein base material 10 can be Silicon Wafer or circuit board, and metal gasket 100 is for connecting the input/output terminal of external electronic components, comprise equally test section and conductive projection (101a, 101b, 101c, 101d, 101e, 101f).
Wherein Figure 10 A shows that conductive projection 101a making of the present invention becomes cross, whereby the projection of not same attitude improve contact point structure and the electronic building brick (as display pannel) that attached between conduction property, the position of this conductive projection 101a is not limited to an end of metal gasket 100 among the figure, can be any position on the metal gasket 100, even cross-over connection goes out metal gasket 100 and contacts with base material 10.
Figure 10 B shows that conductive projection 101b of the present invention can make becomes the diesis type, and the position of this conductive projection is not limited to an end of metal gasket 100 among the figure, can be any position on the metal gasket 100, or cross-over connection goes out metal gasket 100 and contacts with base material 10.
Figure 10 C shows that conductive projection 101c can make becomes the U font, and is arranged on the metal gasket 100, is not limited to the position in graphic, or cross-over connection goes out metal gasket 100 and contacts with base material 10.
Figure 10 D demonstration conductive projection 101d can make and become yi word pattern, and Figure 10 E shows that conductive projection 101e is for to be arranged in parallel many of yi word pattern high polymer elastic producing lugs, its structure can be any position on the metal gasket 100, or cross-over connection goes out metal gasket 100 and contacts with base material 10.
Figure 10 F shows that then conductive projection 101f is made as a plurality of yi word pattern (as two fonts, three fonts etc.) elastic projections side by side, and the structure of the conductive projection 101f that both sides are arranged side by side below has been crossed over out metal gasket 100, and cover to base material 10 the electrical contact reliability in the time of can improving follow-up the use.
The many aspects of the embodiment of above-mentioned conductive projection with strip, and be arranged in the metal gasket on the base material, only make the conductive layer that is coated in projection and test section with one deck can reach the purpose of test and conduction simultaneously, the conductive projection of strip more can increase projection and other needs the contact area of the electronic building brick of mutual conduction.
Figure 11 A is depicted as another embodiment of contact point structure of the present invention; it is the end wherein with base material 110 (as Silicon Wafer); form a metal gasket 113 on it; and there is passivation layer 111 to be arranged at around the metal gasket 113; with protection base material 110; only there is metal gasket 113 to expose; high polymer elastic projection 112 then is formed at a side of metal gasket 113; do not cover all metal gaskets 113; by on conductive layer 114 coating metal gaskets 113 and the high polymer elastic projection 112, promptly form test sections again in high polymer elastic projection 112 unlapped metal gasket 113 parts.
The end face that shows high polymer elastic projection 112 among the figure is manufactured with many dimpling dot structures 115, and the formation of dimpling dot structure 115 can be directly makes the multi-convex point shape with high polymer elastic projection 112, is that surperficial coating conductive layer forms coarse surface; Independent micro-elastic projection is formed also or more than one, afterwards coating conductive layer again.Utilize above-mentioned a plurality of dimpling point, can reach electrical contact with less strength during pressing, that these a plurality of dimpling points also can form is single, arrange or many groups form more.
Figure 11 B is shown as the three-dimensional view of Figure 11 A, the clear structure that shows on the base material 110, comprise the passivation layer 111 and metal gasket 113 that are covered on the base material 110, mainly include conductive projection 118 and test section 117 two parts on the metal gasket 113, conductive projection 118 is to be formed by the conductive layer (114) of high polymer elastic projection 112 with surperficial coating.In this example, conductive projection 118 more includes the dimpling dot structure 115 that a plurality of particles are formed, and another embodiment can be high polymer elastic projection 112 structure divisions and is across on the passivation layer 111.
Then other aspect of the foregoing description shown in Figure 11 C, it is the end with base material 110 (as Silicon Wafer) equally wherein, form a metal gasket 113 on it, also there is passivation layer 111 to be arranged at around the metal gasket 113, metal gasket 113 parts expose, present embodiment is characterised in that high polymer elastic projection 112 is formed at a side of metal gasket 113, and only part covers metal gasket 113, the end face of this high polymer elastic projection 112 is manufactured with a plurality of recessed nick hole structures 116, this nick hole structure 116 forms the contact point structure with rough surface in surperficial coating conductive layer 114, so with can reach electrical with less strength during pressing between other electronic building brick and contact, this a plurality of nicks hole structure 116 can form single, many rows or many groups form.
Figure 12 shows that the conductive projection of contact point structure of the present invention forms the aspect an of strip (or the above strip projection of deriving) when manufacturing process, as when being applied to glass Flip-Chip Using (COG), each integrated circuit (IC) chip need arrange to electrically connect glass baseplate and external circuit.As icon, conductive projection can be proper alignment in each contact on the base material (as above-mentioned IC chip) 120 because be arranged in, so can will adjacent high polymer elastic projection 122 directly make the design that becomes a strip projection, the then conductive projection of coating conductive layer formation strip again on the high polymer elastic projection 122.
Figure 13 A is the three-dimensional view of the embodiment of the invention, show the contact point structure that includes proper alignment on the base material 130 (embodiment such as figure are shown as integrated circuit (IC) chip), each contact point structure comprises the conductive projection 131 and test section 133 two parts that the metal gasket top forms, conductive projection 131 is for being coated with the elastic projection of metal conducting layer, and metal conducting layer also covers the local surfaces or all surfaces of elastic projection.
Figure 13 B shows that the conductive projection 131 that forms on each adjacent contact point structure can be arrangement inconsistently when making, as shown in the figure, adjacent conductive projection 131 is the interlaced two ends that are made on the metal gasket with test section 133 structures, in another embodiment, above-mentioned a plurality of adjacent conductive projections 131 can be positioned at optional position on this metal gasket with test section 133.
As shown in figure 14, a plurality of contact point structures are arranged on base material 140, right conductive projection 141 wherein, 142,143 proper alignment not, embodiment is a part that is arranged on this metal gasket 145, and be the optional position, and be not arranged at beyond the metal gasket 145, its structure only comprises one deck conductive layer, this conductive layer is coated in the position that is not occupied by elastic projection with metal gasket 145 on the elastic projection, so can when test, utilize the position that is not occupied by elastic projection, conductive layer wherein directly conducting with 140 conductings of below base material, produces test environment easily again in below metal gasket 145.
The disclosed conductive projection of the various embodiments described above is the conductive structure that occupies the part of metal gasket, and preferred embodiment is for occupying the metal gasket area below percent 90.
The contact point structure of made of the present invention can be used for the joint of crystal grain flip-chip (Flip Chip), directly be placed on the film as the chip for driving and the electronic component thereof that will be applied on the LCD, be COF (Chip on Film), reach more compact purpose; Another embodiment can be applicable on the glass baseplate of glass Flip-Chip Using (COG), promptly directly chip is overturned (flip) and is engaged on the glass baseplate.The described base material of various embodiments of the present invention can be the material of organic or inorganics such as pottery, metal, glass, macromolecule.
It is the elastic projection that core forms that conductive projection has by macromolecular material, macromolecular material can be Polyimide (polyimide, PI), epoxy resin (epoxy) or polyacrylate (acrylic) etc., polymer material layer can patterned (patterning) produce the local elastic construction that is arranged on the metal gasket, provide follow-up when being pressed on other electronic building brick, because of Elastic Contact can guarantee to contact reliability, and the zone that is not covered by conductive projection provides test probe to detect usefulness.
Contact point structure of the present invention is made key step and is recited in Figure 15.The preferred embodiment of the contact point structure with elastic projection and test section proposed by the invention applies to a base material that has had metal gasket or I/O contact (I/O pad) and passivation layer.
Technology begins, and prepares a base material, and base material has a metal gasket at least, can be the electrode of aluminum, becomes the electrical contact of the affiliated electronic building brick of this base material, as I/O contact (step S151), is coated with macromolecular material (step S153) afterwards on base material.Then, carry out the step of this macromolecular material patterning (patterning) with development/etching means, as with dry ecthing mode (dry etching) or wet etching mode (wet etching), be to develop/etching step (step S155) according to the sample attitude of required contact point structure.Wherein another embodiment of step S155 is: this macromolecular material is the macromolecular material of sensitization, imposes photoetch afterwards, i.e. the photosensitive region of mask and irradiation ultraviolet radiation etching off exposure, and formation one occupies the projection of metal gasket subregion behind the removal mask.
Patterned macromolecular material forms an elastic projection on metal gasket, follow the coating layer of conductive material, as metal material being plated on elastic projection and the test section in sputter (sputtering)/photoetch mode, form a conductive layer, make elastic projection form a conductive projection (step S157), so separate into a conductive projection zone and a test section (step S159) on the metal gasket.Conductive projection and test section only electrically connect with a conductive metal layer, and the test before assembly dispatches from the factory can be directly with the direct engaged test of probe district, the electrical characteristic that can accurately test the contact point structure that comprises conductive projection, and can not destroy metal level on the conductive projection.
Contact point structure of the present invention applies on the integrated circuit (IC) chip; technology as shown in figure 16; had on the Silicon Wafer of preparation earlier as the metal gasket of input/output terminal and the passivation layer (step S161) of protection chip body, on metal gasket, be coated with macromolecular material (step S163) afterwards.Then, use mask to carry out patterning, the part of will not wanting with development/etching means is removed again, to form the elastic projection made from macromolecular material (step S165).
For being reached electrical, available less strength in integrated circuit (IC) chip and other electronic building brick pressing process contacts, present embodiment is made dimpling dot structure (step S167) on above-mentioned elastic projection, for instance, above-mentioned high polymer elastic projection directly can be made the multi-convex point shape, form coarse surface; Or the dimpling point of being formed with independent micro-elastic projection more than, and a plurality of dimpling point also can form linearity, many rows, organize or staggered form more.
Coating conductive metal layer more afterwards, can sputter (sputtering) and the mode of photoetch finish it (step S169).At this moment, promptly form the conductive projection that occupies part metals pad area on the metal gasket, distinguish the test section (step S171) that is not occupied by conductive projection with another.
The various embodiments described above have disclosed principal character of the present invention, comprising:
1, the optional position of elastic conductive projection on metal gasket can reach the most resilient design according to demand;
2, local flexible conductive projection above the metal gasket;
3, metal gasket is divided into projection district (bump area) and test section (probe test area);
4, elastic conductive projection is formed in the metal gasket or partly crosses over out metal gasket;
5, electric conducting material is with the elastic projection all or part of coating in surface;
6, elastic conductive projection is shaped as rectangle, circle or triangle or its combination;
7, the upper surface of elastic conductive projection can have rough surface;
8, the elastic conductive projection area occupies metal gasket below 90%.
In sum, the present invention is a kind of contact point structure and its manufacture method with elastic projection and test section, can reach the bounce of dwindling after projection reduces joint, utilize the setting of test section to reach the purpose of easily-testing simultaneously, and because the layer of metal layer only is set, so the advantage that reduces cost is arranged also.
The above only is a preferable possible embodiments of the present invention, and non-so promptly inflexible limit claim of the present invention so use specification of the present invention and the equivalent structure variation for it of icon content institute such as, all in like manner is contained in the scope of the present invention, closes and gives Chen Ming.
Claims (16)
1. contact point structure with elastic projection and test section, this contact point structure is arranged on the base material, it is characterized in that this contact point structure comprises:
One or more high polymer elastic projection is arranged at the regional area of this contact point structure;
One test section is arranged in the zone of this contact point structure except that this occupied zone of high polymer elastic projection; And
One electric conducting material forms a conductive metal layer and is coated in this high polymer elastic projection and forms a conductive projection, is coated on this test section the metal gasket with this contact point structure of conducting, with this conductive projection of conducting and this test section.
2. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that including on the described base material a plurality of contact point structures.
3. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that described base material is organic or inorganic materials such as pottery, metal, glass, macromolecule or silicon.
4. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that described base material is a Silicon Wafer.
5. the contact point structure with elastic projection and test section as claimed in claim 4 is characterized in that described Silicon Wafer coats a passivation layer, and this contact point structure is exposed to the part of this passivation layer for coating.
6. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that the I/O contact of described contact point structure for this base material.
7. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that described high polymer elastic salient point is that Polyimide, epoxy resin or polyacrylate material are made.
8. the contact point structure with elastic projection and test section as claimed in claim 1, what it is characterized in that described high polymer elastic projection is shaped as one of pyramid, pyramid type, yi word pattern, cross, diesis type and U font.
9. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that described high polymer elastic projection top is manufactured with a plurality of dimpling points or nick hole.
10. the contact point structure with elastic projection and test section as claimed in claim 9, it is characterized in that be with a plurality of dimpling points or a plurality of nicks hole produce this high polymer elastic projection single, arrange or the matsurface of many groups form more.
11. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that described high polymer elastic projection is made up of an above standalone elastic projection.
12. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that described high polymer elastic projection is arranged in this contact point structure or contains the peripheral passivation layer of this contact point structure.
13. the contact point structure with elastic projection and test section as claimed in claim 1 is characterized in that the electric conducting material of described high polymer elastic lug surface institute coating is whole coatings or part coating.
14. the manufacture method with contact point structure of elastic projection and test section is characterized in that, comprising:
1) preparation one base material, this base material has this contact point structure at least;
2) coating one macromolecular material is on this contact point structure;
3) this macromolecular material of development/etching makes this contact point structure form one or more elastic projection and a test section; And
4) coating layer of conductive material makes this elastic projection form a conductive projection;
Whereby, this conductive projection and this test section electrically connect with this layer electric conducting material, make this test section and this conductive projection conducting.
15. the manufacture method with contact point structure of elastic projection and test section as claimed in claim 14 is characterized in that the material of described base material for the organic or inorganic of pottery, metal, glass, macromolecule or silicon.
16. the manufacture method with contact point structure of elastic projection and test section is characterized in that, comprising:
1) preparation one Silicon Wafer, this Silicon Wafer have had one as the metal gasket of input/output terminal and the passivation layer of a protection Silicon Wafer main body;
2) coating one macromolecular material is on this Silicon Wafer;
3) this macromolecular material of development/etching makes this metal gasket form one or more elastic projection and a test section; And
4) coating one conductive metal layer is on this elastic projection and this test section, and this elastic projection forms a conductive projection;
Whereby, this conductive projection and this test section electrically connect with this layer conductive metal layer, make this test section and this conductive projection conducting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101371767A CN100527402C (en) | 2006-10-23 | 2006-10-23 | A contact structure with flexible protruding block and testing area and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101371767A CN100527402C (en) | 2006-10-23 | 2006-10-23 | A contact structure with flexible protruding block and testing area and its making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101170089A true CN101170089A (en) | 2008-04-30 |
| CN100527402C CN100527402C (en) | 2009-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101371767A Expired - Fee Related CN100527402C (en) | 2006-10-23 | 2006-10-23 | A contact structure with flexible protruding block and testing area and its making method |
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| CN (1) | CN100527402C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866899A (en) * | 2009-04-20 | 2010-10-20 | 奇景光电股份有限公司 | Semiconductor device |
| CN101577261B (en) * | 2008-05-09 | 2011-05-11 | 台湾薄膜电晶体液晶显示器产业协会 | Connection point structure as well as forming method and connecting structure thereof |
| US8215969B2 (en) | 2008-03-27 | 2012-07-10 | Taiwan Tft Lcd Association | Contact structure and forming method thereof and connecting structure thereof |
| CN102956601A (en) * | 2011-08-18 | 2013-03-06 | 颀邦科技股份有限公司 | Base plate structure with elastic lugs and manufacturing method of base plate structure |
| CN103219254A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Method for forming metal pad |
| CN109963405A (en) * | 2019-03-27 | 2019-07-02 | 云谷（固安）科技有限公司 | A kind of circuit board, display panel and preparation method thereof |
| CN108400124B (en) * | 2017-02-06 | 2019-11-22 | 南亚科技股份有限公司 | Encapsulating structure and its manufacturing method |
| CN111938635A (en) * | 2020-08-10 | 2020-11-17 | 中国科学院上海微系统与信息技术研究所 | Method for preparing salient point and test board for brain electrode rear end connection and test structure |
| CN112309834A (en) * | 2020-11-02 | 2021-02-02 | 江苏纳沛斯半导体有限公司 | Processing method for driving offset gold bump in display chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8215969B2 (en) | 2008-03-27 | 2012-07-10 | Taiwan Tft Lcd Association | Contact structure and forming method thereof and connecting structure thereof |
| CN101577261B (en) * | 2008-05-09 | 2011-05-11 | 台湾薄膜电晶体液晶显示器产业协会 | Connection point structure as well as forming method and connecting structure thereof |
| CN101866899A (en) * | 2009-04-20 | 2010-10-20 | 奇景光电股份有限公司 | Semiconductor device |
| CN102956601A (en) * | 2011-08-18 | 2013-03-06 | 颀邦科技股份有限公司 | Base plate structure with elastic lugs and manufacturing method of base plate structure |
| CN103219254A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Method for forming metal pad |
| CN103219254B (en) * | 2013-03-14 | 2015-09-30 | 上海华力微电子有限公司 | Form the method for metal gasket |
| CN108400124B (en) * | 2017-02-06 | 2019-11-22 | 南亚科技股份有限公司 | Encapsulating structure and its manufacturing method |
| US10580665B2 (en) | 2017-02-06 | 2020-03-03 | Nanya Technology Corporation | Method for manufacturing package structure having elastic bump |
| CN109963405A (en) * | 2019-03-27 | 2019-07-02 | 云谷（固安）科技有限公司 | A kind of circuit board, display panel and preparation method thereof |
| CN109963405B (en) * | 2019-03-27 | 2020-08-18 | 云谷（固安）科技有限公司 | Circuit board, display panel and preparation method thereof |
| CN111938635A (en) * | 2020-08-10 | 2020-11-17 | 中国科学院上海微系统与信息技术研究所 | Method for preparing salient point and test board for brain electrode rear end connection and test structure |
| CN112309834A (en) * | 2020-11-02 | 2021-02-02 | 江苏纳沛斯半导体有限公司 | Processing method for driving offset gold bump in display chip |
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| CN100527402C (en) | 2009-08-12 |
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