CN101151399A - Plated base material - Google Patents
Plated base material Download PDFInfo
- Publication number
- CN101151399A CN101151399A CNA200680009942XA CN200680009942A CN101151399A CN 101151399 A CN101151399 A CN 101151399A CN A200680009942X A CNA200680009942X A CN A200680009942XA CN 200680009942 A CN200680009942 A CN 200680009942A CN 101151399 A CN101151399 A CN 101151399A
- Authority
- CN
- China
- Prior art keywords
- electroless
- plating
- base material
- epithelium
- palladium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000463 material Substances 0.000 title claims abstract description 21
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 77
- 238000007747 plating Methods 0.000 claims abstract description 59
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 37
- 239000010931 gold Substances 0.000 claims abstract description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052737 gold Inorganic materials 0.000 claims abstract description 28
- 238000007772 electroless plating Methods 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- 210000000981 epithelium Anatomy 0.000 claims description 29
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 239000010953 base metal Substances 0.000 abstract description 6
- 238000005476 soldering Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 16
- 239000000758 substrate Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 239000002585 base Substances 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 239000010985 leather Substances 0.000 description 4
- 239000012190 activator Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000010970 precious metal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 238000005844 autocatalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/073—Displacement plating, substitution plating or immersion plating, e.g. for finish plating
Abstract
Provide is a base material having an electroless plating film which is excellent in the corrosion resistance of a base metal and can improve the joinability by soldering, and further is advantageous over a conventional plating film from the view point of the production cost. A plated base material which has a base material and a multi-layer film formed thereon, characterized in that the multi-layer film comprises an electroless nickel plating film as an under layer, a substitution type of electroless palladium plating film having a thickness of not less than 0.2 nm and less than 10 nm or a weight of not less than 0.2432 [mu]g/cm<2> and less than 12.160 [mu]g/cm<2> as an intermediate film, and an electroless gold plating film as an upper layer.
Description
Technical field
The present invention relates to substrate surface and have the electroless nickel plating epithelium, as the displaced type electroless plating palladium epithelium in middle layer, as the electroless gold plating epithelium on upper strata, and the plated base material of the solidity to corrosion of base metal, solderability excellence.
Background technology
The electroless gold plating layer is applicable to terminal, the circuit surface of electronic industry parts such as the circuit, IC assembly, ito substrate, IC-card of printed wiring board.More particularly, the electroless gold plating layer uses for the solidity to corrosion, solder bonds, the overlap joint property that improve Copper Foil on the base material or copper facing wiring.
On substrate electroless plating nickel flashing, carry out the occasion of the displaced type electroless gold plating of defined thickness, especially just it is fast with the replacement(metathesis)reaction of gold to have begun to react back nickel, optionally strong grain boundary part of attacking the precipitation particles in the no electrolytic nickel tunicle, the erosion of precipitation particles is carried out more deeply, formation defect part below gold-plated tunicle.According to circumstances, defect part is continuous or concentrated, even causes the bad order (surface produces pitting attack) of gold-plated tunicle.In addition, although the thin film thickness of the golden tunicle of separating out, but depth of erosion is dark, because the fragilityization of the electroless plating nickel flashing that such displaced type gold plating liquid is caused reaches the adhesivity deficiency with gold-plated tunicle, when endurance test, cause and peel off, or can not guarantee sufficient soldering intensity when carrying out soldering, above-mentioned or the like problem is pointed out.
In order to solve the problem in this electroless gold plating, wish to improve solidity to corrosion, the raising solder bonds of base metal.In this situation, proposed by the scheme (patent documentation 1) that electroless plating palladium layer improves solderability is set between electroless plating nickel dam and electroless gold plating layer.
Patent documentation 1: special fair 8-28561 communique
Summary of the invention
Yet in the above-mentioned scheme, the plating palladium layer in middle layer is 0.01～0.2 μ m (10～200nm), and plating palladium liquid has used reduced form (autocatalysis type) the plating palladium liquid that contains reductive agent.The problem of reduced form plating palladium liquid is that bath is stable low, and therefore bath control is very numerous and diverse, also causes the bath decomposition easily.In addition, because film thickness is thick, use precious metal palladium as described above morely, aspect cost, have problems.
The objective of the invention is to, even a kind of plating palladium layer that forms as thin as a wafer as the middle layer is provided, the solidity to corrosion of base metal is also excellent, and can improve the base material with electroless gold plating epithelium of solder bonds.
What the present inventor concentrated on studies found that, be located at the occasion that forms displaced type electroless plating palladium layer between electroless plating nickel dam on the base material and the electroless gold plating layer, even this plating palladium layer is the thin skin film less than 10nm, also can possess sufficient base metal solidity to corrosion and solder bonds, thereby finish the present invention.
That is, the present invention relates to following scheme:
[1] a kind of plated base material is the plated base material that has multilayer film on base material, it is characterized in that, this multilayer film comprises:
Lower floor, it is the electroless nickel plating epithelium;
The middle layer, it is that film thickness is that perhaps weight is 0.2432 μ g/cm more than the 0.2nm, less than 10nm
2More than, less than 12.160 μ g/cm
2Displaced type electroless plating palladium epithelium;
The upper strata, it is the electroless gold plating epithelium.
As [1] described plated base material, it is characterized in that [2] the phosphorus containing ratio in the electroless nickel plating epithelium is below the 15 weight %.
As [1] or [2] described plated base material, it is characterized in that [3] the electroless gold plating epithelium is the noncyanide type (cyanide-free type) of sulfurous acid system.
The invention effect
According to the present invention, the amount of coating of high precious metal palladium greatly can reduce cost, and, can obtain comparing not inferior in fact result as the occasion of the reduced form epithelium of volume with the palladium amount of coating that uses of prior art about the solidity to corrosion and the solder bonds of base metal.
Embodiment
As base material used in the present invention, be the terminal of electronic industry parts such as the circuit of printed wiring board, IC assembly, ito substrate, IC-card, circuit surface etc., but do not have particular restriction, applicable to the base material that needs electroless gold plating.
The electroless nickel plating solution that is used to form the electroless nickel plating epithelium used in the present invention, particular restriction can not used when electroless gold plating to forming the normally used electroless nickel plating solution of substrate nickel plating epithelium.The preferred plating liquid that forms Ni-P plating epithelium that uses.In this occasion, form the electroless nickel plating epithelium and make that the phosphorus containing ratio in this epithelium is below the 15 weight %, be preferably the scope of 5-10 weight %.
In addition,, do not have particular restriction yet, can use the electroless gold plating solution that uses as the displaced type electroless gold plating solution usually for the electroless gold plating solution that is used to form the electroless gold plating epithelium, but the noncyanide type that preferred sulfurous acid is.
In addition, the electroless plating palladium epithelium that uses among the present invention, between above-mentioned substrate electroless nickel plating epithelium and electroless gold plating epithelium, be provided with, it is important being defined as displaced type electroless plating palladium layer.Form the occasion of this epithelium by reduced form electroless plating palladium, need the control leather film thickness, and for guarantee sufficient solder bonds make this leather film thickness be about 50nm more than, but according to the present invention, the occasion that adopts the displaced type electroless plating to cover can make it as thin as a wafer.In the present invention, the thickness of displaced type electroless plating palladium epithelium is also very important.In the present invention, the thickness of electroless plating palladium epithelium is with more than the 0.2nm, form less than the scope of 10nm.Perhaps, by weight, with 0.2432 μ g/cm
2More than, less than 12.160 μ g/cm
2Scope form.Be preferably below the above 9nm of 0.2nm, in addition, be preferably 0.2432 μ g/cm by weight
2More than 10.444 μ g/cm
2Below, following (the 0.608 μ g/cm of the above 5nm of 0.5nm more preferably
2More than 6.080 μ g/cm
2Below) scope.When less than 0.2nm or less than 0.2432 μ g/cm
2The time, the effect in electroless plating palladium middle layer be can not present, and 10nm or 12.160 μ g/cm reached
2The time, the superiority aspect cost diminishes because therefore the usage quantity of precious metal palladium increases not only, and produces the problem that causes solder bonds intensity to reduce.
Displaced type electroless plating palladium liquid itself for plating epithelium in the middle of being used to form can use known plating liquid.
In addition, among the present invention, the leather film thickness of above-mentioned no electrolytic nickel substrate coating is preferably 1-20 μ m, and the electroless gold plating leather film thickness is preferably 10-500nm.
Embodiment
Below embodiments of the invention are described.
Embodiment 1-5, comparative example 1-4
Plating technic:
Among embodiment 1-5 and the comparative example 2-3, shown in following, alkali degreasing liquid, activator, electroless nickel plating solution have used day goods of ore deposit メ Le プ レ one テ イ Application グ company respectively, and displaced type electroless plating palladium liquid, electroless gold plating solution have used the goods of day ore deposit マ テ リ ア Le ズ company.
With the evaluation shown in following with printed wiring board 1), 2) (day ore deposit プ レ one テ イ Application グ corporate system P-1000), is carried out 2 minutes alkali degreasings under 45 ℃, the condition of pH12.0 to use alkali degreasing liquid.Then, carry out each operation by following order.Moreover, except all being inserted with 1 minute washing step the preimpregnation → give between the activator.
Soft etching (sulfuric acid+Sodium Persulfate system, 25 ℃, 2 minutes)
→ sulfuric acid scrubbing (3%, 25 ℃, 2 minutes)
→ preimpregnation (hydrochloric acid system, 25 ℃, 1 minute)
→ give activator (day ore deposit プ レ one テ イ Application グ corporate system, KG-522 (chlorination system, Pd concentration: 0.12g/L, 25 ℃, pH＜1.0,30 second))
→ sulfuric acid scrubbing (3%, 25 ℃, 10 seconds)
→ electroless nickel plating (day ore deposit プ レ one テ イ Application グ corporate system, KG-530 (88 ℃, pH4.5,25 minutes, the P containing ratio was 7%))
→ displaced type electroless plating palladium (day ore deposit マ テ リ ア Le ズ corporate system, CF-400 (chlorination system, Pd:0.1g/L, 25 ℃, pH2.0,1 minute))
→ electroless gold plating (day ore deposit マ テ リ ア Le ズ corporate system, CF-500SS (sulfurous acid system, Au concentration: 1.0g/L, 80 ℃, pH7.5,2 minutes)).
Estimate and use substrate:
The printed wiring board of the pad (pad) that 1) to have 500 resist peristomes be Φ 0.48mm.
2) has the printed wiring board that the resist peristome is the square pad of 1～10mm.
In addition, with the example that do not carry out above-mentioned displaced type electroless plating palladium as a comparative example 1, to replace above-mentioned displaced type electroless plating palladium, carried out reduced form electroless plating palladium (day ore deposit マ テ リ ア Le ズ corporate system, CA-400 (Pd:0.8g/L, 43 ℃, pH7.5,5 minutes) example as a comparative example 4.
Carried out following evaluation for the printed wiring board of having operated, formed 3 layers of plating epithelium as described above.
Solidity to corrosion:
To 1) substrate carry out the plating of defined after, in the aqueous nitric acid of 20 volume % the dipping 10 minutes after, wash drying.Use the Gold plated Layer outward appearance of 50 times the whole pads of observation by light microscope.Its metewand is: in 500 pads, the number of pads of variable color, less than 1% be evaluated as zero, be more than 1% but less than 10% the △ that is evaluated as, be being evaluated as more than 10% *.
Solder wettability:
To 2) substrate on carry out defined plating handle after, substrate is carried out thermal treatment in 160 ℃ * 24 hours.Then, on the square pad of 10 3mm, be coated with soldering flux, and the Sn-4.0Ag-0.5Cu solder ball of Φ 0.6mm is shelved on pad central authorities, in the soft heat stove, under 250 ℃ of the peak temperatures, carry out soft heat.
The solder expanded range be Φ 1.5mm above be evaluated as zero, for more than the 1.2mm but less than the △ that is evaluated as of 1.5mm, less than being evaluated as of 1.2mm *.
Solder bonds intensity:
To 1) substrate on carry out defined plating handle after, substrate is carried out thermal treatment in 160 ℃ * 24 hours, on the pad of 20 Φ 0.48mm, be coated with soldering flux (flux) then, carry the Sn-4.0Ag-0.5Cu solder ball of 0.6mm Φ, in the soft heat stove, under 250 ℃ of the peak temperatures, carry out soft heat.
Use the conjugation test machine (bond tester)-4000 of デ イ ジ corporate system, adopt to add heat-traction method mensuration bond strength.
In addition, the palladium cost is with will using reduced form plating palladium liquid, and the palladium matrix metal cost of the occasion (comparative example 4) of the plating palladium layer of formation thickness 50nm is represented as the relative cost of 1 occasion.
Above-mentioned evaluation result is shown in table 1,2.
Table 1
| Embodiment | ||||||
| 1 | 2 | 3 | 4 | 5 | ||
| Film constitutes | Nickel layer (μ m) plating palladium layer (nm) Gold plated Layer (nm) | 6.5 0.2 100 | 6.5 1 50 | 6.5 2 50 | 6.5 5 100 | 6.5 9 50 |
| Evaluation result | Solidity to corrosion solder wettability solder bonds intensity (gf) palladium cost | ○ ○ 2205 1/250 | ○ ○ 2409 1/50 | ○ ○ 2437 1/25 | ○ ○ 2331 1/10 | ○ ○ 2224 1/6.25 |
Table 2
| Comparative example | |||||
| 1 | 2 | 3 | 4 | ||
| Film constitutes | Nickel layer (μ m) plating palladium layer (nm) Gold plated Layer (nm) | 6.5 - 50 | 6.5 0.1 50 | 6.5 10 50 | 6.5 reduction palladium: 50 50 |
| Evaluation result | Solidity to corrosion solder wettability solder bonds intensity (gf) palladium cost | × × 2026 0 | × × 2101 1/500 | ○ ○ 2134 1/5 | ○ ○ 2386 1 |
Claims (3)
1. a plated base material is the plated base material that has multilayer film on base material, it is characterized in that, this multilayer film comprises:
Lower floor, it is the electroless nickel plating epithelium;
The middle layer, it is that film thickness is that perhaps weight is 0.2432 μ g/cm more than the 0.2nm, less than 10nm
2More than, less than 12.160 μ g/cm
2Displaced type electroless plating palladium epithelium;
The upper strata, it is the electroless gold plating epithelium.
2. plated base material as claimed in claim 1 is characterized in that, the phosphorus containing ratio in the electroless nickel plating epithelium is below the 15 weight %.
3. plated base material as claimed in claim 1 or 2 is characterized in that, the electroless gold plating epithelium is the noncyanide type of sulfurous acid system.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005105625 | 2005-04-01 | ||
| JP105625/2005 | 2005-04-01 | ||
| PCT/JP2006/304881 WO2006112215A1 (en) | 2005-04-01 | 2006-03-13 | Plated base material |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101334459A Division CN101942652B (en) | 2005-04-01 | 2006-03-13 | Plated base substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101151399A true CN101151399A (en) | 2008-03-26 |
| CN101151399B CN101151399B (en) | 2010-12-29 |
Family
ID=37114947
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680009942XA Active CN101151399B (en) | 2005-04-01 | 2006-03-13 | Plated base material |
| CN2010101334459A Active CN101942652B (en) | 2005-04-01 | 2006-03-13 | Plated base substrate |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101334459A Active CN101942652B (en) | 2005-04-01 | 2006-03-13 | Plated base substrate |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP4926053B2 (en) |
| KR (1) | KR20070114391A (en) |
| CN (2) | CN101151399B (en) |
| HK (1) | HK1116838A1 (en) |
| TW (1) | TWI316095B (en) |
| WO (1) | WO2006112215A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102802364A (en) * | 2012-09-11 | 2012-11-28 | 岳长来 | Method for arranging metal palladium layer in conducting layer of printed circuit board and layered structure thereof |
| CN110325665A (en) * | 2017-06-28 | 2019-10-11 | 小岛化学药品株式会社 | Electroless plating technique |
| CN111492093A (en) * | 2017-12-19 | 2020-08-04 | Ｊｘ金属株式会社 | Semiconductor wafer and method for manufacturing the same |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007031740A (en) * | 2005-07-22 | 2007-02-08 | Shinko Electric Ind Co Ltd | Electronic component, and its manufacturing method |
| JP5288362B2 (en) * | 2007-01-17 | 2013-09-11 | 奥野製薬工業株式会社 | Multilayer plating film and printed wiring board |
| JP5013077B2 (en) | 2007-04-16 | 2012-08-29 | 上村工業株式会社 | Electroless gold plating method and electronic component |
| ATE503037T1 (en) * | 2008-10-17 | 2011-04-15 | Atotech Deutschland Gmbh | STRESS-REDUCED NI-P/PD STACKS FOR WAFER SURFACE |
| JP5680342B2 (en) * | 2009-09-02 | 2015-03-04 | Tdk株式会社 | Plating film, printed wiring board and module substrate |
| JPWO2011099597A1 (en) * | 2010-02-15 | 2013-06-17 | 株式会社Ｊｃｕ | Method for manufacturing printed wiring board |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04307736A (en) * | 1991-04-04 | 1992-10-29 | Canon Inc | Interconnection method of fine multilayer-structure semiconductor element |
| JPH081980B2 (en) * | 1993-11-25 | 1996-01-10 | 大日工業株式会社 | Printed wiring board and manufacturing method thereof |
| JP2785102B2 (en) * | 1994-03-31 | 1998-08-13 | 株式会社ジャパンエナジー | Electroless gold plating method |
| JP3345529B2 (en) * | 1995-06-20 | 2002-11-18 | 日立化成工業株式会社 | Wire bonding terminal, method of manufacturing the same, and method of manufacturing semiconductor mounting substrate using the wire bonding terminal |
| JPH09172236A (en) * | 1995-12-20 | 1997-06-30 | Seiichi Serizawa | Printed-wiring board |
| JPH10287994A (en) * | 1997-04-14 | 1998-10-27 | World Metal:Kk | Plating structure of bonding part |
| JP2001358164A (en) * | 2000-06-13 | 2001-12-26 | Ne Chemcat Corp | Electrode formed with electroless multilayer plating film thereon, and its manufacturing method |
| CN1143656C (en) * | 2001-01-10 | 2004-03-31 | 中国科学院上海原子核研究所 | Radioactive 32P blood vessel support and its manufacture |
| JP2003226993A (en) * | 2002-02-01 | 2003-08-15 | Electroplating Eng Of Japan Co | Gold plating solution and gold plating treatment method |
-
2006
- 2006-03-13 JP JP2007521139A patent/JP4926053B2/en active Active
- 2006-03-13 CN CN200680009942XA patent/CN101151399B/en active Active
- 2006-03-13 KR KR1020077023727A patent/KR20070114391A/en not_active Application Discontinuation
- 2006-03-13 CN CN2010101334459A patent/CN101942652B/en active Active
- 2006-03-13 WO PCT/JP2006/304881 patent/WO2006112215A1/en active Application Filing
- 2006-03-31 TW TW095111454A patent/TWI316095B/en active
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2008
- 2008-06-18 HK HK08106771.4A patent/HK1116838A1/en unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102802364A (en) * | 2012-09-11 | 2012-11-28 | 岳长来 | Method for arranging metal palladium layer in conducting layer of printed circuit board and layered structure thereof |
| CN102802364B (en) * | 2012-09-11 | 2014-11-05 | 深圳市和美精艺科技有限公司 | Method for arranging metal palladium layer in conducting layer of printed circuit board and layered structure thereof |
| CN110325665A (en) * | 2017-06-28 | 2019-10-11 | 小岛化学药品株式会社 | Electroless plating technique |
| CN111492093A (en) * | 2017-12-19 | 2020-08-04 | Ｊｘ金属株式会社 | Semiconductor wafer and method for manufacturing the same |
| CN111492093B (en) * | 2017-12-19 | 2022-03-15 | Ｊｘ金属株式会社 | Semiconductor wafer and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4926053B2 (en) | 2012-05-09 |
| WO2006112215A1 (en) | 2006-10-26 |
| TW200643215A (en) | 2006-12-16 |
| TWI316095B (en) | 2009-10-21 |
| CN101942652A (en) | 2011-01-12 |
| KR20070114391A (en) | 2007-12-03 |
| CN101942652B (en) | 2012-06-27 |
| HK1116838A1 (en) | 2009-01-02 |
| JPWO2006112215A1 (en) | 2008-12-04 |
| CN101151399B (en) | 2010-12-29 |
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