JP5288362B2 - Multilayer plating film and printed wiring board - Google Patents
Multilayer plating film and printed wiring board Download PDFInfo
- Publication number
- JP5288362B2 JP5288362B2 JP2007007763A JP2007007763A JP5288362B2 JP 5288362 B2 JP5288362 B2 JP 5288362B2 JP 2007007763 A JP2007007763 A JP 2007007763A JP 2007007763 A JP2007007763 A JP 2007007763A JP 5288362 B2 JP5288362 B2 JP 5288362B2
- Authority
- JP
- Japan
- Prior art keywords
- plating film
- palladium
- acid
- electroless
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 238000007747 plating Methods 0.000 title claims description 195
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 160
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 150
- 229910052759 nickel Inorganic materials 0.000 claims description 80
- 229910052763 palladium Inorganic materials 0.000 claims description 75
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 54
- 229910052737 gold Inorganic materials 0.000 claims description 54
- 239000010931 gold Substances 0.000 claims description 54
- 239000000243 solution Substances 0.000 claims description 44
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 239000011574 phosphorus Substances 0.000 claims description 17
- 239000008139 complexing agent Substances 0.000 claims description 15
- 239000003638 chemical reducing agent Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 9
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- 150000002941 palladium compounds Chemical class 0.000 claims description 7
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical group COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000010408 film Substances 0.000 description 123
- 229910000679 solder Inorganic materials 0.000 description 37
- 150000003863 ammonium salts Chemical class 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 159000000000 sodium salts Chemical class 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 159000000001 potassium salts Chemical class 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000006073 displacement reaction Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 7
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 150000002816 nickel compounds Chemical class 0.000 description 4
- 238000010979 pH adjustment Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- SDKPSXWGRWWLKR-UHFFFAOYSA-M sodium;9,10-dioxoanthracene-1-sulfonate Chemical compound [Na+].O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)[O-] SDKPSXWGRWWLKR-UHFFFAOYSA-M 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- VCVKIIDXVWEWSZ-YFKPBYRVSA-N (2s)-2-[bis(carboxymethyl)amino]pentanedioic acid Chemical compound OC(=O)CC[C@@H](C(O)=O)N(CC(O)=O)CC(O)=O VCVKIIDXVWEWSZ-YFKPBYRVSA-N 0.000 description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- 229940120146 EDTMP Drugs 0.000 description 3
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 3
- 239000004471 Glycine Substances 0.000 description 3
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 3
- 150000008575 L-amino acids Chemical class 0.000 description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 3
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 3
- 235000004279 alanine Nutrition 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 229960005261 aspartic acid Drugs 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 3
- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 3
- 229960002989 glutamic acid Drugs 0.000 description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 3
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 3
- 229960003330 pentetic acid Drugs 0.000 description 3
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 3
- 229960003080 taurine Drugs 0.000 description 3
- DETXZQGDWUJKMO-UHFFFAOYSA-N 2-hydroxymethanesulfonic acid Chemical compound OCS(O)(=O)=O DETXZQGDWUJKMO-UHFFFAOYSA-N 0.000 description 2
- CKLJMWTZIZZHCS-UHFFFAOYSA-N D-OH-Asp Natural products OC(=O)C(N)CC(O)=O CKLJMWTZIZZHCS-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- CKLJMWTZIZZHCS-UWTATZPHSA-N L-Aspartic acid Natural products OC(=O)[C@H](N)CC(O)=O CKLJMWTZIZZHCS-UWTATZPHSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- -1 amine compounds Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 235000013922 glutamic acid Nutrition 0.000 description 2
- 239000004220 glutamic acid Substances 0.000 description 2
- 229940116298 l- malic acid Drugs 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229940053662 nickel sulfate Drugs 0.000 description 2
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 description 2
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- WLXGQMVCYPUOLM-UHFFFAOYSA-N 1-hydroxyethanesulfonic acid Chemical compound CC(O)S(O)(=O)=O WLXGQMVCYPUOLM-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- DIZBQMTZXOUFTD-UHFFFAOYSA-N 2-(furan-2-yl)-3h-benzimidazole-5-carboxylic acid Chemical compound N1C2=CC(C(=O)O)=CC=C2N=C1C1=CC=CO1 DIZBQMTZXOUFTD-UHFFFAOYSA-N 0.000 description 1
- BDOYKFSQFYNPKF-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].[Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O BDOYKFSQFYNPKF-UHFFFAOYSA-N 0.000 description 1
- XXSPKSHUSWQAIZ-UHFFFAOYSA-L 36026-88-7 Chemical compound [Ni+2].[O-]P=O.[O-]P=O XXSPKSHUSWQAIZ-UHFFFAOYSA-L 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004280 Sodium formate Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- IQXHAJSMTNDJGA-UHFFFAOYSA-O azanium;gold(1+);dicyanide Chemical compound [NH4+].[Au+].N#[C-].N#[C-] IQXHAJSMTNDJGA-UHFFFAOYSA-O 0.000 description 1
- GABPAXJCPQEORA-UHFFFAOYSA-K azanium;gold(3+);disulfite Chemical compound [NH4+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O GABPAXJCPQEORA-UHFFFAOYSA-K 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- SUMDYPCJJOFFON-UHFFFAOYSA-N beta-hydroxyethanesulfonic acid Natural products OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 229940099690 malic acid Drugs 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- HLBBKKJFGFRGMU-UHFFFAOYSA-M sodium formate Chemical compound [Na+].[O-]C=O HLBBKKJFGFRGMU-UHFFFAOYSA-M 0.000 description 1
- 235000019254 sodium formate Nutrition 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- VMDSWYDTKFSTQH-UHFFFAOYSA-N sodium;gold(1+);dicyanide Chemical compound [Na+].[Au+].N#[C-].N#[C-] VMDSWYDTKFSTQH-UHFFFAOYSA-N 0.000 description 1
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- KRZKNIQKJHKHPL-UHFFFAOYSA-J tripotassium;gold(1+);disulfite Chemical compound [K+].[K+].[K+].[Au+].[O-]S([O-])=O.[O-]S([O-])=O KRZKNIQKJHKHPL-UHFFFAOYSA-J 0.000 description 1
- NCPXQVVMIXIKTN-UHFFFAOYSA-N trisodium;phosphite Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])[O-] NCPXQVVMIXIKTN-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
本発明は、例えば、プリント配線板の導体部分の表面処理として適用する場合に、優れたハンダ接合強度を与えることのできる多層めっき皮膜及び該多層めっき皮膜が形成されたプリント配線板に関する。 The present invention relates to a multilayer plating film that can provide excellent solder joint strength when applied as a surface treatment of a conductor portion of a printed wiring board, for example, and a printed wiring board on which the multilayer plating film is formed.
電子部品、特にプリント配線板において、金ワイヤー、アルミワイヤー等のボンディングやハンダ付けを行う際に、接合箇所の導体部分に対する表面処理として、無電解ニッケルめっき皮膜を形成した後、金めっき皮膜を形成することがある。この処理は、金めっき皮膜によってニッケルめっき皮膜の表面を保護して高いハンダ接合強度を発揮させるとともに、良好なハンダ濡れ性を確保しようとするものである。上記表面処理では、通常、1〜10μm程度の無電解ニッケルめっき皮膜を形成した後、置換めっき方法によって0.03〜0.1μm程度の金めっき皮膜を形成しており、更に、金ワイヤーボンディングにおける優れた耐熱性を付与することなどを目的として、厚さ0.2〜1μm程度の金めっき皮膜を置換めっき法又は還元めっき法によって形成することがある。 When bonding or soldering gold wires, aluminum wires, etc. on electronic parts, especially printed wiring boards, after forming an electroless nickel plating film as a surface treatment for the conductor part of the joint, form a gold plating film There are things to do. This treatment is intended to protect the surface of the nickel plating film with the gold plating film to exhibit high solder joint strength and to ensure good solder wettability. In the above surface treatment, an electroless nickel plating film of about 1 to 10 μm is usually formed, and then a gold plating film of about 0.03 to 0.1 μm is formed by a displacement plating method. For the purpose of imparting excellent heat resistance, a gold plating film having a thickness of about 0.2 to 1 μm is sometimes formed by a displacement plating method or a reduction plating method.
しかしながら、上記した方法では、置換めっき法で金めっき皮膜を形成する際に、下地のニッケルめっき皮膜との電位差によって金めっきが析出するために、ニッケルめっき皮膜の表面が浸食されるという問題点がある。この様なニッケルめっき皮膜の浸食は、ハンダ付け性やボンディング性の低下の原因となり、更に、液の汚染の原因ともなる。 However, the above-described method has a problem in that when the gold plating film is formed by the displacement plating method, the surface of the nickel plating film is eroded because gold plating is deposited due to a potential difference from the underlying nickel plating film. is there. Such erosion of the nickel plating film causes deterioration of solderability and bonding property, and further causes contamination of the liquid.
このため、ニッケルめっき皮膜の保護等を目的として、無電解ニッケルめっき皮膜と置換金めっき皮膜との間に、中間層として無電解パラジウムめっき皮膜を形成する方法が提案されている(下記特許文献1参照)。この方法は、中間層としてパラジウムめっき皮膜を形成することによって、置換金めっき液によるニッケルめっき皮膜の浸食を抑制しようとするものであるが、無電解パラジウムめっき皮膜は、ハンダ中への拡散性が劣るために、ハンダ付けの際に無電解ニッケルめっき皮膜の表面に残存して、ハンダ接合強度の低下の原因となることがある。また、無電解パラジウムめっき皮膜が薄い場合や、被めっき物の形状は複雑な場合などには、パラジウムめっき皮膜の析出が不十分となって、ニッケルめっき皮膜の露出部分が生じることがある。この場合、ニッケルはパラジウムより卑な金属であるために、一部でもニッケルめっき皮膜が露出すると、この部分のニッケルが優先的に溶解してニッケル表面が浸食され、ハンダ付け性低下の原因となる。
本発明は、上記した従来技術の現状に鑑みてなされたものであり、その主な目的は、電子部品、特に、プリント配線板の導体回路部分等に適用して、優れたハンダ付け性、ワイヤーボンディング性などを付与することが可能な新規な処理方法を提供することである。 The present invention has been made in view of the current state of the prior art described above, and its main object is to apply it to electronic components, particularly conductor circuit portions of printed wiring boards, etc. It is an object of the present invention to provide a novel processing method capable of imparting bonding properties and the like.
本発明者は、上記した目的を達成すべく鋭意研究を重ねてきた。その結果、プリント配線板の導体部分に、通常用いられているニッケルめっき皮膜と比較してリン含有量が多い特定の無電解ニッケルめっき皮膜を形成した後、0.01〜1μmという非常に薄い無電解パラジウムめっき皮膜を形成する場合には、その後、置換型金めっきを行う際に、下地のニッケルめっき皮膜が殆ど浸食されることがなく、しかも、ハンダ付けの際にパラジウムが迅速にハンダ中に拡散して、良好なハンダ接合性が確保されることを見出した。本発明は、この様な新規な知見に基づいて、更に研究を重ねた結果完成されたものである。 The present inventor has intensively studied to achieve the above-described object. As a result, after forming a specific electroless nickel plating film having a higher phosphorus content than the commonly used nickel plating film on the conductor portion of the printed wiring board, a very thin film thickness of 0.01 to 1 μm is obtained. When forming an electrolytic palladium plating film, the underlying nickel plating film is hardly eroded when performing substitutional gold plating, and the palladium is rapidly put into the solder during soldering. It has been found that good solder bondability is ensured by diffusion. The present invention has been completed as a result of further research based on such novel findings.
即ち、本発明は、下記の多層めっき皮膜及び該多層めっき皮膜が形成されたプリント配線板を提供するものである。
1. リン含有率10〜13重量%の無電解ニッケルめっき皮膜、厚さ0.01〜1μmの無電解パラジウムめっき皮膜、及び置換型金めっき皮膜が順次積層されてなる多層めっき皮膜。
2. 置換型金めっき皮膜上に、更に、還元型無電解金めっき皮膜が形成されてなる上記項1に記載の多層めっき皮膜
3. 上記項1又は2に記載の多層めっき皮膜がプリント配線板の導体部分に形成されていることを特徴とするプリント配線板。
本発明の多層めっき皮膜は、リン含有率10〜13重量%の無電解ニッケルめっき皮膜、厚さ0.01〜1μmの無電解パラジウムめっき皮膜、及び置換型金めっき皮膜が順次積層されてなるものである。
That is, the present invention provides the following multilayer plating film and a printed wiring board on which the multilayer plating film is formed.
1. A multilayer plating film obtained by sequentially laminating an electroless nickel plating film having a phosphorus content of 10 to 13% by weight, an electroless palladium plating film having a thickness of 0.01 to 1 μm, and a displacement type gold plating film.
2. 2. The multilayer plating film according to item 1, wherein a reduced electroless gold plating film is further formed on the substitutional gold plating film. 3. A printed wiring board, wherein the multilayer plating film according to item 1 or 2 is formed on a conductor portion of the printed wiring board.
The multilayer plating film of the present invention is formed by sequentially laminating an electroless nickel plating film having a phosphorus content of 10 to 13% by weight, an electroless palladium plating film having a thickness of 0.01 to 1 μm, and a displacement type gold plating film. It is.
この様な特定の条件を満足するめっき皮膜を積層した多層構造のめっき皮膜では、無電解パラジウムめっき皮膜の存在によって、置換型金めっきを行う際に、ニッケルめっき皮膜の浸食を防止できる。しかも、リン含有量10〜13重量%というリン含有量が多く、耐食性に優れた無電解ニッケルめっき皮膜を形成しているので、パラジウムめっき皮膜によって完全に被覆されずニッケルめっき皮膜が一部露出している場合であっても、置換型金めっきを行う際に、ニッケルめっき皮膜の浸食を抑制することができる。このため、厚さ0.01〜1μmという非常に薄い無電解パラジウムめっき皮膜を形成するだけで、十分なニッケルめっき皮膜の保護効果が発揮される。更に、無電解パラジウムめっき皮膜が非常に薄いために、ハンダ付けを行う際に、パラジウムが十分にハンダ中に拡散して、高いハンダ接合強度を確保できる。 In the multilayered plating film in which the plating films satisfying such specific conditions are laminated, the presence of the electroless palladium plating film can prevent erosion of the nickel plating film when performing substitutional gold plating. In addition, since the electroless nickel plating film having a high phosphorus content of 10 to 13% by weight and excellent corrosion resistance is formed, the nickel plating film is not completely covered by the palladium plating film and is partially exposed. Even if it is a case, when performing substitution type | mold gold plating, erosion of a nickel plating film | membrane can be suppressed. For this reason, the protective effect of a sufficient nickel plating film is exhibited only by forming a very thin electroless palladium plating film having a thickness of 0.01 to 1 μm. Furthermore, since the electroless palladium plating film is very thin, when soldering, palladium is sufficiently diffused into the solder, and high solder joint strength can be secured.
以上の様に、上記した特定の多層構造のめっき皮膜とすることによって、プリント配線板の導体部分などに、高いハンダ結合強度を有するめっき皮膜を形成することができる。以下、本発明の多層めっき皮膜について、より具体的に説明する。 As described above, by using the plating film having the specific multilayer structure described above, a plating film having high solder bonding strength can be formed on the conductor portion of the printed wiring board. Hereinafter, the multilayer plating film of the present invention will be described more specifically.
(1)無電解ニッケルめっき皮膜
本発明では、ニッケルめっき皮膜として、リン含有量10〜13重量%程度の無電解ニッケルめっき皮膜を形成する。この様なリン含有量が多い無電解ニッケルめっき皮膜は、良好な耐食性を有するものであり、この上に、非常に薄い無電解パラジウムめっき皮膜を形成した場合であっても、置換型金めっき液による浸食が殆ど生じることがない。
(1) Electroless nickel plating film In the present invention, an electroless nickel plating film having a phosphorus content of about 10 to 13% by weight is formed as the nickel plating film. Such an electroless nickel plating film with a high phosphorus content has good corrosion resistance, and even when a very thin electroless palladium plating film is formed thereon, a substitutional gold plating solution Erosion due to is hardly generated.
上記した無電解ニッケルめっき皮膜は、水溶性ニッケル化合物、還元剤、及び錯化剤を必須成分として含有する水溶液からなる無電解ニッケルめっき液を用いて形成することができる。 The electroless nickel plating film described above can be formed using an electroless nickel plating solution made of an aqueous solution containing a water-soluble nickel compound, a reducing agent, and a complexing agent as essential components.
水溶性ニッケル化合物としては、めっき液に可溶性であって、所定の濃度の水溶液が得られるものであれば特に限定されない。例えば、硫酸ニッケル、塩化ニッケル、スルファミン酸ニッケル、次亜リン酸ニッケル等を用いることができる。水溶性ニッケル化合物は1種単独又は2種以上混合して用いることができる。特に硫酸ニッケルが溶解性が良好である点で好ましい。 The water-soluble nickel compound is not particularly limited as long as it is soluble in the plating solution and can obtain an aqueous solution having a predetermined concentration. For example, nickel sulfate, nickel chloride, nickel sulfamate, nickel hypophosphite, or the like can be used. A water-soluble nickel compound can be used individually by 1 type or in mixture of 2 or more types. In particular, nickel sulfate is preferable in terms of good solubility.
水溶性ニッケル化合物の含有量は、0.5〜50g/L程度とすることが好ましく、2〜10g/L程度とすることがより好ましい。 The content of the water-soluble nickel compound is preferably about 0.5 to 50 g / L, and more preferably about 2 to 10 g / L.
還元剤としては、次亜リン酸及び次亜リン酸塩から選ばれた少なくとも一種を用いることができる。次亜リン酸塩としては、例えば、ナトリウム塩、カリウム塩、アンモニウム塩等を用いることができる。還元剤の含有量は、5〜100g/L程度とすることが好ましく、10〜50g/Lとすることがより好ましい。 As the reducing agent, at least one selected from hypophosphorous acid and hypophosphite can be used. As hypophosphite, for example, sodium salt, potassium salt, ammonium salt and the like can be used. The content of the reducing agent is preferably about 5 to 100 g / L, and more preferably 10 to 50 g / L.
錯化剤としては公知の錯化剤を使用できる。例えば、酢酸、蟻酸等のモノカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;マロン酸、コハク酸、アジピン酸、マレイン酸、フマール酸等のジカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;リンゴ酸、乳酸、グリコール酸、グルコン酸、クエン酸等のヒドロキシカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;エチレンジアミンジ酢酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等を1種単独又は2種以上混合して用いることができる。 A known complexing agent can be used as the complexing agent. For example, monocarboxylic acids such as acetic acid and formic acid, ammonium salts, potassium salts, sodium salts thereof; dicarboxylic acids such as malonic acid, succinic acid, adipic acid, maleic acid, fumaric acid, ammonium salts, potassium salts thereof, Sodium salts, etc .; hydroxycarboxylic acids such as malic acid, lactic acid, glycolic acid, gluconic acid, citric acid, ammonium salts, potassium salts, sodium salts thereof; ethylenediaminediacetic acid, 1-hydroxyethylidene-1,1-diphosphonic acid These ammonium salts, potassium salts, sodium salts and the like can be used singly or in combination of two or more.
錯化剤の含有量は、0.5〜100g/L程度とすることが好ましく、5〜50g/Lとすることがより好ましい。 The complexing agent content is preferably about 0.5 to 100 g / L, more preferably 5 to 50 g / L.
尚、エチレンジアミンテトラ酢酸、ジエチレントリアミンペンタ酢酸等のアミノポリカルボン酸やそれらのナトリウム塩、カリウム塩、アンモニウム塩等;グリシン、アラニン、イミノジ酢酸、ニトリロトリ酢酸、L−グルタミン酸、L−グルタミン酸2酢酸、L−アスパラギン酸、タウリン等のアミノ酸類、アミノトリメチレンホスホン酸、エチレンジアミンテトラメチレンホスホン酸、それらのアンモニウム塩、カリウム塩、ナトリウム塩等のアミノ基を有する化合物や、エチレンジアミン、ジエチレントリアミンなどのアミン化合物は、例えば0.5g/L程度以上配合すると目的のリン含有量のニッケルめっき皮膜が得られ難くなるため、配合しないことが望ましい。 Aminopolycarboxylic acids such as ethylenediaminetetraacetic acid and diethylenetriaminepentaacetic acid and their sodium, potassium and ammonium salts; glycine, alanine, iminodiacetic acid, nitrilotriacetic acid, L-glutamic acid, L-glutamic acid diacetic acid, L- Amino acids such as aspartic acid and taurine, aminotrimethylenephosphonic acid, ethylenediaminetetramethylenephosphonic acid, compounds having amino groups such as ammonium salt, potassium salt and sodium salt, and amine compounds such as ethylenediamine and diethylenetriamine are, for example, If it is blended in an amount of about 0.5 g / L or more, it is difficult to obtain a nickel-plated film having a target phosphorus content.
無電解ニッケルめっき液には、更に、安定剤として、通常用いられている硝酸鉛、酢酸鉛等の鉛塩、硝酸ビスマス、酢酸ビスマス等のビスマス塩等を1種単独又は2種以上添加することができる。その添加量は0.01〜100mg/L程度が好ましい。ただし、チオジグリコール酸、チオ硫酸ナトリウム等や、その他公知の硫黄化合物については、安定剤として効果が認められる濃度、例えば0.05mg/L以上配合すると目的のリン含有量のニッケルめっき皮膜が得られ難いため、配合しないことが望ましい。 In addition to the electroless nickel plating solution, one or more of lead salts such as lead nitrate and lead acetate, bismuth salts such as bismuth nitrate and bismuth acetate, which are generally used, are added as stabilizers. Can do. The addition amount is preferably about 0.01 to 100 mg / L. However, for thiodiglycolic acid, sodium thiosulfate, and other known sulfur compounds, a nickel plating film with the desired phosphorus content can be obtained by adding a concentration that is effective as a stabilizer, for example 0.05 mg / L or more. It is desirable not to blend because it is difficult to be blended.
さらに、めっき液の浸透性を向上させるために、界面活性剤を配合することができる。界面活性剤としては、ノニオン性、カチオン性、アニオン性、両性等の界面活性剤を1種単独又は2種以上添加することができる。添加量としては、0.1〜100mg/L程度が好ましい。 Furthermore, in order to improve the permeability of the plating solution, a surfactant can be blended. As the surfactant, nonionic, cationic, anionic, and amphoteric surfactants can be added singly or in combination of two or more. The addition amount is preferably about 0.1 to 100 mg / L.
無電解ニッケルめっき液のpHは、2〜9程度、特に3〜8程度であることが好ましい。pH調整には、硫酸、リン酸等の無機酸および水酸化ナトリウム、アンモニア水等を使用することができる。 The pH of the electroless nickel plating solution is preferably about 2 to 9, particularly about 3 to 8. For pH adjustment, inorganic acids such as sulfuric acid and phosphoric acid, sodium hydroxide, aqueous ammonia and the like can be used.
上記したpH範囲において、pHを低く設定することによって、リン含有量の多いニッケルめっき皮膜を形成できる。 By setting the pH low in the above pH range, a nickel plating film having a high phosphorus content can be formed.
(2)無電解パラジウムめっき皮膜
無電解パラジウムめっき皮膜は、パラジウム化合物、還元剤及び錯化剤を必須成分として含有する水溶液からなる無電解パラジウムめっき液を用いて形成することができる。
(2) Electroless palladium plating film An electroless palladium plating film can be formed using an electroless palladium plating solution comprising an aqueous solution containing a palladium compound, a reducing agent and a complexing agent as essential components.
無電解パラジウムめっき液に配合するパラジウム化合物としては、めっき液に可溶性であって、所定の濃度の水溶液が得られるものであれば特に限定されない。例えば、硫酸パラジウム、塩化パラジウム、酢酸パラジウム、ジクロロジエチンレジアミンパラジウム、テトラアンミンパラジウムジクロライド等の水溶性パラジウム化合物を用いることができる。また、パラジウム化合物として、パラジウムを溶液化したいわゆるパラジウム溶液を使用することもできる。パラジウム溶液としては、例えば、ジクロロジエチレンジアミンパラジウム溶液やテトラアンミンパラジウムジクロライド溶液も使用することができる。パラジウム化合物は、1種単独又は2種以上混合して用いることができる。 The palladium compound blended in the electroless palladium plating solution is not particularly limited as long as it is soluble in the plating solution and can obtain an aqueous solution having a predetermined concentration. For example, water-soluble palladium compounds such as palladium sulfate, palladium chloride, palladium acetate, dichlorodiethine rediamine palladium, and tetraammine palladium dichloride can be used. Further, as the palladium compound, a so-called palladium solution in which palladium is made into a solution can also be used. As the palladium solution, for example, a dichlorodiethylenediamine palladium solution or a tetraammine palladium dichloride solution can also be used. A palladium compound can be used individually by 1 type or in mixture of 2 or more types.
パラジウム化合物の含有量は、パラジウムとして0.1〜30g/L程度とすることが好ましく、0.3〜10g/L程度とすることがより好ましい。 The content of the palladium compound is preferably about 0.1 to 30 g / L as palladium, and more preferably about 0.3 to 10 g / L.
無電解パラジウムめっきの還元剤としては、蟻酸、次亜リン酸、亜リン酸、これらの塩(ナトリウム塩、カリウム塩、アンモニウム塩等)等を用いることができる。これらの還元剤は、一種単独又は二種以上混合して用いることができる。 As a reducing agent for electroless palladium plating, formic acid, hypophosphorous acid, phosphorous acid, salts thereof (sodium salt, potassium salt, ammonium salt, etc.) and the like can be used. These reducing agents can be used singly or in combination of two or more.
還元剤の含有量は、0.1〜100g/L程度とすることが好ましく、1〜50g/Lとすることがより好ましい。 The content of the reducing agent is preferably about 0.1 to 100 g / L, more preferably 1 to 50 g / L.
還元剤としては、特に、蟻酸又はその塩が好ましい。これを使用することにより、99%以上の純度のパラジウムめっき皮膜の形成が可能になり、より高いハンダ接合強度を得ることができる。 As the reducing agent, formic acid or a salt thereof is particularly preferable. By using this, it becomes possible to form a palladium plating film having a purity of 99% or more, and higher solder joint strength can be obtained.
錯化剤としては、公知の錯化剤が使用できる。例えばエチレンジアミン、ジエチレントリアミン等のアミン類;エチレンジアミンジ酢酸、エチレンジアミンテトラ酢酸、ジエチレントリアミンペンタ酢酸等のアミノポリカルボン酸、これらのナトリウム塩、カリウム塩、アンモニウム塩等;グリシン、アラニン、イミノジ酢酸、ニトリロトリ酢酸、L−グルタミン酸、L−グルタミン酸2酢酸、L−アスパラギン酸、タウリン等のアミノ酸、これらのナトリウム塩、カリウム塩、アンモニウム塩等;アミノトリメチレンホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、エチレンジアミンテトラメチレンホスホン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等を配合することができる。錯化剤は1種単独又は2種以上混合して用いることができる。錯化剤の配合量としては、0.5〜100g/L程度とすることが好ましく、5〜50g/L程度とすることがより好ましい。 A known complexing agent can be used as the complexing agent. For example, amines such as ethylenediamine and diethylenetriamine; aminopolycarboxylic acids such as ethylenediaminediacetic acid, ethylenediaminetetraacetic acid and diethylenetriaminepentaacetic acid, sodium salts, potassium salts and ammonium salts thereof; glycine, alanine, iminodiacetic acid, nitrilotriacetic acid, L Amino acids such as glutamic acid, L-glutamic acid diacetic acid, L-aspartic acid, taurine, sodium salts, potassium salts, ammonium salts thereof; aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, ethylenediamine Tetramethylene phosphonic acid, ammonium salts thereof, potassium salts, sodium salts and the like can be blended. Complexing agents can be used alone or in combination of two or more. The compounding amount of the complexing agent is preferably about 0.5 to 100 g / L, more preferably about 5 to 50 g / L.
無電解パラジウムめっき液のpHは2〜9程度であることが好ましく、特に3〜8程度であることが好ましい。pH調整には、硫酸、リン酸等の無機酸、水酸化ナトリウム、アンモニア水等を使用することができる。 The pH of the electroless palladium plating solution is preferably about 2 to 9, and particularly preferably about 3 to 8. For pH adjustment, inorganic acids such as sulfuric acid and phosphoric acid, sodium hydroxide, aqueous ammonia and the like can be used.
(3)置換型金めっき皮膜
置換型金めっき皮膜は、水溶性金塩及び錯化剤を必須成分として含有する水溶液からなる置換型金めっき液を用いて形成することができる。
(3) Substitutional gold plating film A substitutional gold plating film can be formed using a substitutional gold plating solution comprising an aqueous solution containing a water-soluble gold salt and a complexing agent as essential components.
置換型金めっき液としては、一般にプリント配線板用途などにおいて使用されているものをそのまま利用できる。置換型金めっき液としては、シアン含有めっき浴とシアン不含有めっき浴があるが、いずれのめっき浴を用いても良い。 As the replacement-type gold plating solution, those generally used in printed wiring board applications can be used as they are. As the substitutional gold plating solution, there are a cyan-containing plating bath and a cyan-free plating bath, and any plating bath may be used.
置換型金めっき液に配合する水溶性金塩としては、めっき液に可溶性であって、所定の濃度の水溶液が得られるものであれば特に限定されない。例えば、亜硫酸金カリウム、亜硫酸金ナトリウム、亜硫酸金アンモニウム、シアン化金カリウム、シアン化金ナトリウム、シアン化金アンモニウム等を用いることができる。水溶性金塩は1種単独又は2種以上混合して用いることができる。水溶性金塩の含有量は、0.1〜20g/L程度とすることが好ましく、0.3〜5g/L程度とすることがより好ましい。 The water-soluble gold salt to be blended in the substitutional gold plating solution is not particularly limited as long as it is soluble in the plating solution and an aqueous solution having a predetermined concentration can be obtained. For example, potassium gold sulfite, sodium gold sulfite, gold ammonium sulfite, potassium gold cyanide, sodium gold cyanide, ammonium gold cyanide and the like can be used. The water-soluble gold salt can be used alone or in combination of two or more. The content of the water-soluble gold salt is preferably about 0.1 to 20 g / L, and more preferably about 0.3 to 5 g / L.
錯化剤としては公知の錯化剤を使用できる。例えばエチレンジアミン、ジエチレントリアミン等のアミン類;エチレンジアミンジ酢酸、エチレンジアミンテトラ酢酸、ジエチレントリアミンペンタ酢酸等のアミノポリカルボン酸、これらのナトリウム塩、カリウム塩、アンモニウム塩等;グリシン、アラニン、イミノジ酢酸、ニトリロトリ酢酸、L−グルタミン酸、L−グルタミン酸2酢酸、L−アスパラギン酸、タウリン等のアミノ酸類、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;アミノトリメチレンホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、エチレンジアミンテトラメチレンホスホン酸、メタンスルホン酸、エタンスルホン酸などのアルキルスルホン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;ヒドロキシメタンスルホン酸、ヒドロキシエタンスルホン酸等のアルカノールスルホン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;ベンゼンスルホン酸、p−フェノールスルホン酸等の芳香族スルホン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等を用いることができる。錯化剤は1種単独又は2種以上混合して用いることができる。錯化剤の含有量は、0.5〜100g/L程度とすることが好ましく、5〜50g/L程度とすることがより好ましい。 A known complexing agent can be used as the complexing agent. For example, amines such as ethylenediamine and diethylenetriamine; aminopolycarboxylic acids such as ethylenediaminediacetic acid, ethylenediaminetetraacetic acid and diethylenetriaminepentaacetic acid, sodium salts, potassium salts and ammonium salts thereof; glycine, alanine, iminodiacetic acid, nitrilotriacetic acid, L Amino acids such as glutamic acid, L-glutamic acid diacetic acid, L-aspartic acid, taurine, ammonium salts, potassium salts, sodium salts thereof; aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, Alkylsulfonic acids such as ethylenediaminetetramethylenephosphonic acid, methanesulfonic acid, ethanesulfonic acid, ammonium salts, potassium salts, sodium salts thereof; hydroxymethanesulfonic acid Alkanol sulfonic acids such as hydroxyethanesulfonic acid, ammonium salts, potassium salts, sodium salts thereof; aromatic sulfonic acids such as benzenesulfonic acid, p-phenolsulfonic acid, ammonium salts, potassium salts, sodium salts, etc. Can be used. Complexing agents can be used alone or in combination of two or more. The complexing agent content is preferably about 0.5 to 100 g / L, more preferably about 5 to 50 g / L.
置換型金めっき液のpHは2〜9程度、特に3〜8程度であることが好ましい。pH調整には、硫酸、リン酸等の無機酸、水酸化ナトリウム、アンモニア水等を使用することができる。 The pH of the displacement type gold plating solution is preferably about 2 to 9, particularly about 3 to 8. For pH adjustment, inorganic acids such as sulfuric acid and phosphoric acid, sodium hydroxide, aqueous ammonia and the like can be used.
(4)多層めっき皮膜の形成方法:
本発明の多層めっき皮膜を形成するには、まず、被めっき物上にリン含有量10〜13重量%程度の無電解ニッケルめっき皮膜を形成する。
(4) Formation method of multilayer plating film:
In order to form the multilayer plating film of the present invention, first, an electroless nickel plating film having a phosphorus content of about 10 to 13% by weight is formed on an object to be plated.
被めっき物については特に限定はないが、特に、本発明は、プリント配線板のパッド部分、回路部分、端子部分等の導体部分を被めっき物とする場合に、ハンダ付け性、ワイヤーボンディング性などに優れた皮膜を形成することが可能である。 There is no particular limitation on the object to be plated, but in particular, the present invention provides solderability, wire bonding property, etc., when a conductor part such as a pad part, a circuit part, or a terminal part of a printed wiring board is to be plated. It is possible to form an excellent film.
プリント配線板としては、例えば、エポキシ樹脂、ポリイミド樹脂等を基材として銅等による導体部分が形成されている基板;ガラス、セラミックス等を基材として銅、銀、タングステン、モリブデンなどによる導体部分が形成されている基板等を使用できる。 As a printed wiring board, for example, a substrate in which a conductor portion made of copper or the like is formed using epoxy resin, polyimide resin or the like as a base material; a conductor portion made of copper, silver, tungsten, molybdenum or the like is made of glass or ceramics as a base material A formed substrate or the like can be used.
無電解ニッケルめっき皮膜は常法に従って形成することができる。通常は、無電解ニッケルめっき液中に被めっき物を浸漬すればよい。 The electroless nickel plating film can be formed according to a conventional method. Usually, the object to be plated may be immersed in an electroless nickel plating solution.
無電解ニッケルめっきに先だって、常法に従って、脱脂、活性化などの前処理を行うことができる。被めっき物が無電解ニッケルめっきに対して触媒活性を有さない場合には、常法に従ってパラジウム核などの金属触媒核を付着させた後に無電解ニッケルめっきを行えばよい。無電解ニッケルめっきの際には、必要に応じて、めっき液の撹拌や被めっき物の揺動を行うことができる。 Prior to electroless nickel plating, pretreatment such as degreasing and activation can be performed according to a conventional method. When the object to be plated does not have catalytic activity for electroless nickel plating, electroless nickel plating may be performed after attaching a metal catalyst nucleus such as a palladium nucleus according to a conventional method. During electroless nickel plating, the plating solution can be agitated and the object to be plated can be swung as necessary.
無電解ニッケルめっき液の処理温度は、50℃〜95℃程度、特に60℃〜90℃程度であることが好ましい。 The treatment temperature of the electroless nickel plating solution is preferably about 50 ° C to 95 ° C, particularly about 60 ° C to 90 ° C.
無電解ニッケルめっき皮膜の膜厚は、特に限定的ではないが、0.1〜15μm程度であることが好ましく、0.2μm〜10μm程度であることがより好ましい。ニッケルめっき液の膜厚が薄すぎる場合には、ニッケルめっきの効果が得られ難く、厚すぎる場合には、一定以上の効果は得られないので、経済的でない。 The film thickness of the electroless nickel plating film is not particularly limited, but is preferably about 0.1 to 15 μm, and more preferably about 0.2 μm to 10 μm. If the thickness of the nickel plating solution is too thin, it is difficult to obtain the effect of nickel plating, and if it is too thick, an effect of a certain level cannot be obtained, which is not economical.
次いで、上記した方法で無電解ニッケルめっき皮膜を形成した被めっき物を無電解パラジウムめっき液中に浸漬することによって、無電解パラジウムめっき皮膜を形成することができる。 Next, the electroless palladium plating film can be formed by immersing the object on which the electroless nickel plating film is formed by the above-described method in an electroless palladium plating solution.
無電解パラジウムめっき液の処理温度としては、30℃〜90℃程度、特に40℃〜80℃程度であることが好ましい。 The treatment temperature of the electroless palladium plating solution is preferably about 30 ° C to 90 ° C, particularly about 40 ° C to 80 ° C.
無電解パラジウムめっき皮膜の厚さは、0.01〜1μm程度とすることが必要であり、0.05〜0.5μm程度とすることが好ましい。この様な非常に薄い無電解パラジウムめっき皮膜をリン含有量10〜13重量%程度の無電解ニッケルめっき皮膜上に形成することによって、置換型金めっき皮膜を形成する際にニッケルめっき皮膜の浸食が抑制され、しかも、ハンダ付けの際に、パラジウムが残存することなくハンダ中に十分に拡散して、高いハンダ接合強度を得ることができる。 The thickness of the electroless palladium plating film needs to be about 0.01 to 1 μm, and preferably about 0.05 to 0.5 μm. By forming such a very thin electroless palladium plating film on an electroless nickel plating film having a phosphorus content of about 10 to 13% by weight, the erosion of the nickel plating film can be prevented when forming a substitutional gold plating film. In addition, when soldering, palladium is sufficiently diffused in the solder without remaining, and high solder joint strength can be obtained.
次いで、無電解パラジウムめっき皮膜を形成した被めっき物を置換型金めっき液中に浸漬することによって、金めっき皮膜を形成することができる。 Next, the gold plating film can be formed by immersing the object on which the electroless palladium plating film is formed in a substitutional gold plating solution.
置換型金めっき液の処理温度としては、50℃〜95℃程度、特に60℃〜90℃程度であることが好ましい。 The processing temperature of the substitutional gold plating solution is preferably about 50 ° C. to 95 ° C., particularly about 60 ° C. to 90 ° C.
置換型金めっき皮膜の膜厚については、特に限定的ではなく、被めっき物の使用目的などに応じて適宜決めればよい。通常は、0.001〜0.3μm程度の範囲とすればよい。 The film thickness of the displacement-type gold plating film is not particularly limited, and may be appropriately determined according to the purpose of use of the object to be plated. Usually, the range may be about 0.001 to 0.3 μm.
本発明によれば、リン含有量10〜13重量%程度の無電解ニッケルめっき皮膜上に、厚さ0.01〜1μm程度の無電解パラジウムめっき皮膜を形成することによって、置換型金めっきを行う際に、無電解ニッケルめっき皮膜の浸食を抑制できる。その結果、無電解ニッケルめっき皮膜の良好な状態を維持でき、しかもパラジウムめっき皮膜の膜厚が薄く、ハンダ中に十分に拡散することによって、良好なハンダ接合性を得ることができる。 According to the present invention, substitutional gold plating is performed by forming an electroless palladium plating film having a thickness of about 0.01 to 1 μm on an electroless nickel plating film having a phosphorus content of about 10 to 13% by weight. In this case, erosion of the electroless nickel plating film can be suppressed. As a result, a good state of the electroless nickel plating film can be maintained, and the film thickness of the palladium plating film is thin, and satisfactory solder bonding can be obtained by sufficiently diffusing into the solder.
さらに、必要に応じて、還元剤を含有する無電解金めっき液を用いて厚付け金めっきを行うこともできる。厚付け金めっきを行うことによって、さらに耐熱性の良好なニッケル/パラジウム/金めっき皮膜が得られ、特にワイヤーボンディング性能における耐熱性が良好になる。厚付け金めっき皮膜の膜厚は、特に限定的ではないが、通常、金めっき皮膜の合計膜厚として、1μm程度までの膜厚とされる。 Furthermore, if necessary, thick gold plating can be performed using an electroless gold plating solution containing a reducing agent. By performing thick gold plating, a nickel / palladium / gold plating film with better heat resistance is obtained, and in particular, the heat resistance in wire bonding performance is improved. The thickness of the thick gold plating film is not particularly limited, but is usually a film thickness of up to about 1 μm as the total film thickness of the gold plating film.
本発明の多層めっき皮膜は、例えば、プリント配線板の導体部分等に対する表面処理として適用した場合には、優れたハンダ接合性、ワイヤーボンディング性などを付与することができる。 For example, when the multilayer plating film of the present invention is applied as a surface treatment for a conductor portion or the like of a printed wiring board, it can impart excellent solder bonding properties, wire bonding properties, and the like.
以下、実施例を挙げて本発明を更に詳細に説明する。 Hereinafter, the present invention will be described in more detail with reference to examples.
実施例1
以下、本発明の実施例及び比較例において用いためっき液の組成を示す。
(I)無電解ニッケルめっき液
(1)ニッケル浴A1〜A3:
硫酸ニッケル・6水和物 22.5g/L
次亜リン酸ナトリウム 20 g/L
リンゴ酸 10 g/L
コハク酸 10 g/L
上記組成の水溶液について、水酸化ナトリウムを用いてpH調整を行い、pH4.2に調整したものをニッケル浴A1、pH4.6に調整したものをニッケル浴A2、pH5.0に調整したものをニッケル浴A3とする。
Example 1
Hereinafter, the composition of the plating solution used in the examples and comparative examples of the present invention is shown.
(I) Electroless nickel plating solution (1) Nickel baths A1 to A3:
Nickel sulfate hexahydrate 22.5g / L
Sodium hypophosphite 20 g / L
Malic acid 10 g / L
Succinic acid 10 g / L
The aqueous solution having the above composition was adjusted to pH with sodium hydroxide, adjusted to pH 4.2 with nickel bath A1, adjusted to pH 4.6 with nickel bath A2, adjusted to pH 5.0 with nickel. Let it be bath A3.
(2)ニッケル浴B1及びB2:
硫酸ニッケル・6水和物 22.5g/L
次亜リン酸ナトリウム 20 g/L
リンゴ酸 10 g/L
コハク酸 10 g/L
チオジグリコール酸 20 mg/L
上記組成の水溶液について、水酸化ナトリウムを用いてpH調整を行い、pH4.2に調整したものをニッケル浴B1、pH4.6に調整したものをニッケル浴B2とする。
(2) Nickel baths B1 and B2:
Nickel sulfate hexahydrate 22.5g / L
Sodium hypophosphite 20 g / L
Malic acid 10 g / L
Succinic acid 10 g / L
Thiodiglycolic acid 20 mg / L
About the aqueous solution of the said composition, pH adjustment is performed using sodium hydroxide, what was adjusted to pH 4.2 is nickel bath B1, and what was adjusted to pH 4.6 is nickel bath B2.
(II)無電解パラジウムめっき液
(1)パラジウム浴A
ジクロロジエチレンジアミンパラジウム溶液 2g/L(パラジウムとして)
エチレンジアミン 10g/L
蟻酸ナトリウム 10g/L
pH 6.0
(2)パラジウム浴B
ジクロロジエチレンジアミンパラジウム溶液 2g/L(パラジウムとして)
エチレンジアミン 10g/L
次亜リン酸ナトリウム 10g/L
pH 6.0
(3)パラジウム浴C:
ジクロロジエチレンジアミンパラジウム溶液 2g/L(パラジウムとして)
エチレンジアミン 10g/L
亜リン酸ナトリウム 10g/L
pH 6.0
(II) Electroless palladium plating solution (1) Palladium bath A
Dichlorodiethylenediamine palladium solution 2g / L (as palladium)
Ethylenediamine 10g / L
Sodium formate 10g / L
pH 6.0
(2) Palladium bath B
Dichlorodiethylenediamine palladium solution 2g / L (as palladium)
Ethylenediamine 10g / L
Sodium hypophosphite 10g / L
pH 6.0
(3) Palladium bath C:
Dichlorodiethylenediamine palladium solution 2g / L (as palladium)
Ethylenediamine 10g / L
Sodium phosphite 10g / L
pH 6.0
(III)置換金めっき液
(1)金めっき浴A
エチレンジアミン4酢酸2ナトリウム 20g/L
シアン化金カリウム 2g/L(金として)
pH 5.0
(III) Replacement gold plating solution (1) Gold plating bath A
Ethylenediaminetetraacetic acid disodium 20g / L
Potassium cyanide 2g / L (as gold)
pH 5.0
被めっき物として樹脂基板に銅回路およびレジストを形成したプリント基板を用いた。該プリント基板は、6cm×6cmの樹脂基板上に、厚さ18μmの銅箔を用いてパッド径0.5mmφのパッド部を多数形成したものである。 A printed circuit board in which a copper circuit and a resist were formed on a resin substrate was used as an object to be plated. The printed circuit board is obtained by forming a large number of pad portions having a pad diameter of 0.5 mmφ on a 6 cm × 6 cm resin substrate using a copper foil having a thickness of 18 μm.
まず、被めっき物について、脱脂処理を行った後、過硫酸ナトリウム溶液で0.5μm程度のエッチングを行い、触媒付与液(商標名:ICPアクセラ、奥野製薬工業(株)製)200ml/L中に、室温で1分間浸漬して無電解めっき用触媒を付与した。 First, after the degreasing treatment was performed on the object to be plated, etching of about 0.5 μm was performed with a sodium persulfate solution, and a catalyst application solution (trade name: ICP Axela, manufactured by Okuno Pharmaceutical Co., Ltd.) in 200 ml / L And a catalyst for electroless plating was applied by immersion for 1 minute at room temperature.
その後、無電解ニッケルめっき液として、上記ニッケル浴A1〜A3又はB1〜B2を用いて、空気攪拌を行いながら、80℃の浴温で被めっき物を浸漬して、厚さ約5μmのニッケルめっき皮膜を形成した。各ニッケル浴におけるめっき時間は下記表1に示す通りである。 Thereafter, using the above nickel baths A1 to A3 or B1 to B2 as electroless nickel plating solutions, the object to be plated is immersed at a bath temperature of 80 ° C. with air stirring, and the nickel plating has a thickness of about 5 μm. A film was formed. The plating time in each nickel bath is as shown in Table 1 below.
その後、無電解パラジウムめっき液として、パラジウム浴A〜Cのいずれかを用いて、60℃のめっき液中に被めっき物を浸漬することによって無電解パラジウムめっき皮膜を形成した。実施例1〜5及び比較例1〜4については、浸漬時間を10分間として、厚さ約0.2μmのパラジウムめっき皮膜を形成した。実施例6は浸漬時間を40分間として厚さ約0.8μmのパラジウムめっき皮膜を形成した。比較例5、比較例6については、それぞれ浸漬時間を65分、100分として厚さ1.3μmおよび2μmのパラジウムめっき皮膜をそれぞれ形成した。 Thereafter, an electroless palladium plating film was formed by immersing an object to be plated in a plating solution at 60 ° C. using any of the palladium baths A to C as an electroless palladium plating solution. In Examples 1 to 5 and Comparative Examples 1 to 4, a palladium plating film having a thickness of about 0.2 μm was formed with an immersion time of 10 minutes. In Example 6, a palladium plating film having a thickness of about 0.8 μm was formed with an immersion time of 40 minutes. For Comparative Example 5 and Comparative Example 6, palladium plating films with thicknesses of 1.3 μm and 2 μm were formed with immersion times of 65 minutes and 100 minutes, respectively.
次いで、上記した方法で無電解パラジウムめっき皮膜を形成した試料を、金めっき浴A中に80℃で15分間浸漬して置換型金めっき皮膜を形成した。 Next, the sample on which the electroless palladium plating film was formed by the above-described method was immersed in a gold plating bath A at 80 ° C. for 15 minutes to form a substitutional gold plating film.
尚、無電解ニッケル、パラジウム、金めっきのそれぞれの膜厚は、蛍光X線膜厚測定装置により測定した。 In addition, each film thickness of electroless nickel, palladium, and gold plating was measured with the fluorescent X-ray film thickness measuring apparatus.
また、パラジウムめっき皮膜の純度については、銅張り樹脂基板に無電解ニッケルめっきを形成し、その上に3μmの無電解パラジウムめっきを形成した試料を樹脂埋め後研磨を行い、断面方向からEDS(エネルギー分散型X線分光法)により測定した。 As for the purity of the palladium plating film, an electroless nickel plating is formed on a copper-clad resin substrate, and a sample on which 3 μm electroless palladium plating is formed is filled with resin and polished. (Dispersive X-ray spectroscopy).
また、ニッケルめっき皮膜中のリン含有率については、シアンを含有する剥離液を用いて金及びパラジウムを剥離し、ニッケルめっき表面を露出させ、EDS(エネルギー分散型X線分光法)により測定した。 Moreover, about the phosphorus content rate in a nickel plating film | membrane, gold | metal | money and palladium were peeled using the peeling liquid containing cyan | cyanogen, the nickel plating surface was exposed, and it measured by EDS (energy dispersive X ray spectroscopy).
下記表2に各メッキ皮膜の膜厚と、ニッケルめっき皮膜のリン含有量及びパラジウムめっき皮膜の純度を記載する。 Table 2 below lists the film thickness of each plating film, the phosphorus content of the nickel plating film, and the purity of the palladium plating film.
ハンダ接合性試験
上記した方法でめっき皮膜を形成した各試料について、ハンダボールプル試験によって、ハンダ接合性を評価した。
Solder Bondability Test The solder bondability of each sample on which the plating film was formed by the above-described method was evaluated by a solder ball pull test.
ハンダボールプル試験では、Sn−3.5%Ag−0.75%Cuの鉛フリーハンダボールを用い、基板のパッド径は0.5mmφの箇所を使用した。 In the solder ball pull test, Sn-3.5% Ag-0.75% Cu lead-free solder balls were used, and the substrate pad diameter was 0.5 mm.
まず、試験基板にフラックスを塗布し、ハンダボールを載せ、リフロー処理を行った。リフロー条件はプリヒート160℃でピーク温度240℃(230℃以上10秒間)で行った。その後、ハンダバンププル強度測定装置(デイジ社#4000)を用いてハンダプル強度を測定した。測定は20点行い、ハンダボールプル強度の平均値を求めた。結果を下記表3に示す。 First, a flux was applied to a test substrate, a solder ball was placed thereon, and a reflow process was performed. The reflow conditions were a preheat of 160 ° C. and a peak temperature of 240 ° C. (230 ° C. or more and 10 seconds). Thereafter, the solder pull strength was measured using a solder bump pull strength measuring device (Digi Corporation # 4000). The measurement was performed at 20 points, and the average value of the solder ball pull strength was obtained. The results are shown in Table 3 below.
尚、上記プル強度測定後の試料について接合部の表面と断面の観察を行った結果、実施例1〜6及び比較例1〜4の各試料については、無電解ニッケルめっき皮膜とハンダボールとの界面での破壊が認められ、無電解ニッケルめっき皮膜とハンダとの接合強度を測定できたことが確認できた。また、比較例5および6の試料については、破壊箇所にパラジウム皮膜が残存しており、ハンダ中へのパラジウムの拡散が不十分であったことが、プル強度低下の一因であると考えられる。 In addition, as a result of having observed the surface and cross section of the junction part about the sample after the said pull strength measurement, about each sample of Examples 1-6 and Comparative Examples 1-4, an electroless nickel plating film and a solder ball It was confirmed that fracture at the interface was observed, and the bonding strength between the electroless nickel plating film and the solder could be measured. In addition, in the samples of Comparative Examples 5 and 6, the palladium film remained at the fracture site, and the insufficient diffusion of palladium into the solder is considered to be a cause of the drop in pull strength. .
また、前述した方法で金及びパラジウムを剥離しニッケルめっき表面を露出させてニッケルめっき皮膜中のリン含有率を測定した試料について、SEM(走査型電子顕微鏡)によってニッケルめっき界面における孔食の有無を観察した。結果を下記表4に示す。 Moreover, about the sample which peeled gold | metal | money and palladium by the method mentioned above, exposed the nickel plating surface, and measured the phosphorus content rate in a nickel plating film, the presence or absence of pitting corrosion in a nickel plating interface was confirmed by SEM (scanning electron microscope). Observed. The results are shown in Table 4 below.
以上の表2〜表4に示した結果から明らかなように、実施例1及び4〜6では、非常に良好なハンダ接合強度が得られた。また、金及びパラジウムめっき剥離表面も、孔食、粒界腐食等がなく、置換型金めっきでのダメージは認められなかった。 As is apparent from the results shown in Tables 2 to 4, in Examples 1 and 4 to 6, very good solder joint strength was obtained. Also, the gold and palladium plating peeled surface was free from pitting corrosion and intergranular corrosion, and no damage was observed in substitutional gold plating.
実施例2および3では、これらの実施例と比較すると僅かに強度は低かったが、比較例1〜6と比較すると接合強度の大幅な改善が認められた。また、実施例1等と同様に孔食、粒界腐食等はなく、置換金めっきでのダメージは認められなかった。 In Examples 2 and 3, the strength was slightly lower compared to these Examples, but a significant improvement in bonding strength was observed compared to Comparative Examples 1-6. Moreover, there was no pitting corrosion, intergranular corrosion, etc. like Example 1 etc., and the damage by substitution gold plating was not recognized.
なお、実施例1〜6について、めっき皮膜とハンダとの接合界面を表面および断面観察したが、ハンダ成分以外の検出元素は、ニッケル、リンのみであり、パラジウムおよび金はハンダ中に完全に拡散したものと考えられる。 In Examples 1 to 6, the surface and cross section of the bonding interface between the plating film and the solder were observed. However, the detection elements other than the solder component were only nickel and phosphorus, and palladium and gold were completely diffused in the solder. It is thought that.
一方、比較例1〜4では、実施例と比較して、ハンダ接合強度は低い値であった。また、金めっきの時間が同一にも関わらず、各実施例と比較して金めっきは厚く形成されており、電位の卑なニッケルが一部溶解したと考えられる。この点については、表3に記載した通り、比較例1〜4のニッケルめっき表面において、孔食、粒界腐食が観察されたことからも確認できる。 On the other hand, in Comparative Examples 1-4, the solder joint strength was a low value compared with the Example. Moreover, although the time of gold plating is the same, the gold plating is formed thicker than in each of the examples, and it is considered that a portion of nickel with low potential is dissolved. This can be confirmed from the fact that pitting corrosion and intergranular corrosion were observed on the nickel plating surfaces of Comparative Examples 1 to 4, as described in Table 3.
また、比較例5および6では、金めっきおよびパラジウムめっき剥離後の表面観察では、孔食、粒界腐食等は認められなかったが、ハンダ接合強度は特に低い値であった。この点については、ハンダプル試験後の基板界面からパラジウムが検出されており、断面観察を行った結果、ニッケルめっき皮膜上にパラジウムめっき層が0.5μm程度残存していることが判明した。このことから、パラジウムめっきが厚すぎると、ハンダ付けの際にハンダ中にパラジウムが完全に拡散できず、ハンダ接合強度は逆に低くなることが明らかとなった。 In Comparative Examples 5 and 6, pitting corrosion and intergranular corrosion were not observed in the surface observation after peeling off the gold plating and palladium plating, but the solder joint strength was particularly low. About this point, palladium was detected from the board | substrate interface after a solder pull test, As a result of performing cross-sectional observation, it became clear that about 0.5 micrometer of palladium plating layers remain | survived on the nickel plating film. From this, it was clarified that when the palladium plating is too thick, palladium cannot be completely diffused into the solder during soldering, and the solder joint strength is lowered.
Claims (3)
前記無電解パラジウムめっき皮膜は、パラジウム化合物、還元剤及び錯化剤を含有する水溶液からなる無電解パラジウムめっき液を用いて形成され、
前記還元剤は、蟻酸又はその塩である多層めっき皮膜。 Phosphorus content from 10.3 to 13% by weight of electroless nickel plating film, an electroless palladium plating film having a thickness of 0.01 to 1 [mu] m, and Ri are Na are sequentially stacked substitute gold plating film,
The electroless palladium plating film is formed using an electroless palladium plating solution composed of an aqueous solution containing a palladium compound, a reducing agent and a complexing agent,
The reducing agent is formic acid or a multilayer plating film Ru salt thereof der.
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