JP5344416B2 - Bending resistance improver for self-catalyzed electroless nickel plating solution and self-catalyzed electroless nickel plating solution - Google Patents
Bending resistance improver for self-catalyzed electroless nickel plating solution and self-catalyzed electroless nickel plating solution Download PDFInfo
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- JP5344416B2 JP5344416B2 JP2007039348A JP2007039348A JP5344416B2 JP 5344416 B2 JP5344416 B2 JP 5344416B2 JP 2007039348 A JP2007039348 A JP 2007039348A JP 2007039348 A JP2007039348 A JP 2007039348A JP 5344416 B2 JP5344416 B2 JP 5344416B2
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- nickel plating
- electroless nickel
- plating solution
- bending resistance
- compound
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 184
- 238000007747 plating Methods 0.000 title claims abstract description 123
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 91
- 238000005452 bending Methods 0.000 title claims description 23
- -1 alkylene diamine compound Chemical class 0.000 claims abstract description 34
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 20
- 125000002947 alkylene group Chemical group 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 49
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000008139 complexing agent Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 125000005263 alkylenediamine group Chemical group 0.000 claims description 6
- 150000002816 nickel compounds Chemical class 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims 1
- 229940125904 compound 1 Drugs 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 7
- 239000003054 catalyst Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
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- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 150000003009 phosphonic acids Chemical class 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
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- 235000001014 amino acid Nutrition 0.000 description 9
- 150000001413 amino acids Chemical class 0.000 description 9
- 239000000654 additive Substances 0.000 description 8
- 150000003863 ammonium salts Chemical class 0.000 description 8
- 159000000000 sodium salts Chemical class 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 159000000001 potassium salts Chemical class 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 5
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical group CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 5
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- YBYINVALTVLDKD-UHFFFAOYSA-N OCCCCNCCN.ONCCNC(C)C.OCCCNCCN.OCCNCCN.OCNCCN Chemical compound OCCCCNCCN.ONCCNC(C)C.OCCCNCCN.OCCNCCN.OCNCCN YBYINVALTVLDKD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
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- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
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- 238000004381 surface treatment Methods 0.000 description 2
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- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
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- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
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- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- ZDPULXWOPRAFAI-UHFFFAOYSA-N N-butyl-N-[2-(dihydroxyamino)ethyl]hydroxylamine Chemical compound ON(CCN(O)CCCC)O ZDPULXWOPRAFAI-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- CXRIDJCAXSFASO-UHFFFAOYSA-N OCCCCNC(CC)N.ONC(CC)(N)C(C)C.OCCCNC(CC)N Chemical compound OCCCCNC(CC)N.ONC(CC)(N)C(C)C.OCCCNC(CC)N CXRIDJCAXSFASO-UHFFFAOYSA-N 0.000 description 1
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- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
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Abstract
Description
本発明は、無電解ニッケルめっき液及び無電解ニッケルめっき方法に関する。 The present invention relates to an electroless nickel plating solution and an electroless nickel plating method.
従来、電子部品、特にプリント配線板において、はんだ付け、ボンディング等を行う部分には、表面処理として無電解ニッケルめっき皮膜を形成した後、金めっきを施すことが多い。この場合、通常、厚さ1〜5μm程度の無電解ニッケルめっき皮膜を形成した後、置換めっき法により0.03〜0.1μm程度の金皮膜が形成されている。また、金ワイヤボンディングにおける優れた耐熱性を付与するためには、置換金めっき法または還元金めっき法によって、厚さ0.2〜0.7μm程度の金皮膜を形成する場合もある。 Conventionally, in an electronic component, particularly a printed wiring board, a portion subjected to soldering, bonding or the like is often subjected to gold plating after forming an electroless nickel plating film as a surface treatment. In this case, usually, after forming an electroless nickel plating film having a thickness of about 1 to 5 μm, a gold film of about 0.03 to 0.1 μm is formed by a displacement plating method. In order to impart excellent heat resistance in gold wire bonding, a gold film having a thickness of about 0.2 to 0.7 μm may be formed by a displacement gold plating method or a reduction gold plating method.
上記したプリント配線板の基板材料は、主にガラスエポキシ樹脂を用いたいわゆるリジッド基板と主にポリイミド等を用いたフレキシブル基板に大別される。これらの内で、フレキシブル基板では、形状変化に対応するためにめっき皮膜に柔軟性が要求されるが、上記したニッケルめっき/金置換処理を行った場合には、ニッケルめっき皮膜の柔軟性が悪く、基板のパターン部を形成する銅と比較して耐折り曲げ性に劣るという欠点がある。例えば、下記特許文献1には、ニッケル系下地層上にパラジウムを還元析出させてパラジウムバリア層を形成し、該パラジウムバリア層上に置換金めっきによりハンダ接合部を形成する方法が記載されているが、この方法では、ニッケル系下地層の厚さを0.5μm以下とすることが望ましく、0.5μmを超えると、フレキシブル基板での折り曲げに対してクラックが発生し易くなることが記載されている。 Substrate materials for the printed wiring board described above are roughly classified into so-called rigid substrates mainly using glass epoxy resin and flexible substrates mainly using polyimide or the like. Among these, in the flexible substrate, flexibility is required for the plating film in order to cope with the shape change. However, when the above nickel plating / gold substitution treatment is performed, the nickel plating film has poor flexibility. There is a drawback that it is inferior in bending resistance compared to copper forming the pattern portion of the substrate. For example, Patent Document 1 below describes a method in which palladium is reduced and deposited on a nickel-based underlayer to form a palladium barrier layer, and a solder joint is formed on the palladium barrier layer by displacement gold plating. However, in this method, it is desirable that the thickness of the nickel-based underlayer is 0.5 μm or less, and if it exceeds 0.5 μm, it is described that cracks are likely to occur when bent on a flexible substrate. Yes.
また、携帯機器の軽薄短小化によりリジッド基板も軽く薄いものが使用されるようになり、耐折り曲げ性に優れたニッケルめっき皮膜が強く要望されている。
本発明は、上記した従来技術の現状に鑑みてなされたものであり、その主な目的は、耐折り曲げ性に優れたニッケルめっき皮膜を形成できる新規な無電解ニッケルめっき液を提供することである。 The present invention has been made in view of the current state of the prior art described above, and its main purpose is to provide a novel electroless nickel plating solution capable of forming a nickel plating film having excellent bending resistance. .
本発明者は、上記した目的を達成すべく鋭意研究を重ねた結果、特定の一般式で表されるアルキレンジアミン化合物を無電解ニッケルめっき液の添加剤として用いることによって、ニッケルめっき皮膜の耐折り曲げ性が大きく向上し、更に、析出皮膜のファインパターン性や銅素地に対する密着性も向上させることが可能であることを見出した。更に、該アルキレンジアミン化合物をホスホン酸類及びアミノ酸類からなる群から選ばれた少なくとも一種の化合物と併用する場合には、耐折り曲げ性が向上することに加えて、めっき浴の安定性も大きく向上することを見出した。本発明は、これらの知見に基づいて、更に研究を重ねた結果完成されたものである。 As a result of intensive studies to achieve the above-described object, the present inventor has used an alkylenediamine compound represented by a specific general formula as an additive for an electroless nickel plating solution, whereby bending resistance of a nickel plating film can be achieved. It has been found that the properties can be greatly improved, and further, the fine pattern properties of the deposited film and the adhesion to the copper substrate can be improved. Further, when the alkylenediamine compound is used in combination with at least one compound selected from the group consisting of phosphonic acids and amino acids, in addition to improving the bending resistance, the stability of the plating bath is also greatly improved. I found out. The present invention has been completed as a result of further research based on these findings.
即ち、本発明は、下記の無電解ニッケルめっき液及び無電解ニッケルめっき方法を提供するものである。
1. 下記一般式(I)
That is, the present invention provides the following electroless nickel plating solution and electroless nickel plating method.
1. The following general formula (I)
[式中、R1、R2、R3及びR4は、同一又は異なって、それぞれ、水素原子又は下記基: [Wherein R 1 , R 2 , R 3 and R 4 are the same or different and each represents a hydrogen atom or the following group:
(式中、R5は、炭素数1〜5の直鎖状又は分岐鎖状のアルキレン基であり、mは1〜10の整数である)であり、nは2又は3である。]で表されるアルキレンジアミン化合物を含有することを特徴とする自己触媒型無電解ニッケルめっき液。
2. 水溶性ニッケル化合物、還元剤及び錯化剤を必須成分として含有する水溶液である上記項1に記載の無電解ニッケルめっき液。
3. 一般式(I)で表されるアルキレンジアミン化合物において、R1、R2、R3及びR4で表される基の少なくとも一個が水素原子である上記項1又は2に記載の無電解ニッケルめっき液。
4. 一般式(I)で表されるアルキレンジアミン化合物において、R1、R2、R3及びR4で表される基の内で、1〜3個が水素原子である上記項1〜3のいずれかに記載の無電解ニッケルめっき液。
5. 一般式(I)で表されるアルキレンジアミン化合物1モルに対して、ホスホン酸類及びアミノ酸類からなる群から選ばれた少なくとも一種の化合物を0.01〜10モル含有する上記項1〜4のいずれかに記載の無電解ニッケルめっき液。
6. 上記項1〜5のいずれかに記載の無電解ニッケルめっき液に被めっき物を接触させることを特徴とする無電解ニッケルめっき方法。
(Wherein R 5 is a linear or branched alkylene group having 1 to 5 carbon atoms, m is an integer of 1 to 10), and n is 2 or 3. ] The self-catalyzed electroless nickel plating solution characterized by containing the alkylenediamine compound represented by this.
2. Item 2. The electroless nickel plating solution according to Item 1, which is an aqueous solution containing a water-soluble nickel compound, a reducing agent, and a complexing agent as essential components.
3. 3. The electroless nickel plating according to item 1 or 2, wherein in the alkylenediamine compound represented by the general formula (I), at least one of the groups represented by R 1 , R 2 , R 3 and R 4 is a hydrogen atom. liquid.
4). In the alkylenediamine compound represented by the general formula (I), any one of the above items 1 to 3, wherein 1 to 3 of the groups represented by R 1 , R 2 , R 3 and R 4 are hydrogen atoms. An electroless nickel plating solution according to any one of the above.
5. Any of the above items 1 to 4 containing 0.01 to 10 mol of at least one compound selected from the group consisting of phosphonic acids and amino acids with respect to 1 mol of the alkylenediamine compound represented by the general formula (I) An electroless nickel plating solution according to any one of the above.
6). 6. An electroless nickel plating method comprising contacting an object to be plated with the electroless nickel plating solution according to any one of items 1 to 5.
以下、本発明の無電解ニッケルめっき液について詳細に説明する。 Hereinafter, the electroless nickel plating solution of the present invention will be described in detail.
添加剤成分
本発明の無電解ニッケルめっき液は、還元剤を含有する自己触媒型の無電解ニッケルめっき液であって、添加剤として、下記一般式(I)
Additive Component The electroless nickel plating solution of the present invention is a self-catalyzed electroless nickel plating solution containing a reducing agent, and the additive has the following general formula (I)
[式中、R1、R2、R3及びR4は、同一又は異なって、それぞれ、水素原子又は下記基: [Wherein R 1 , R 2 , R 3 and R 4 are the same or different and each represents a hydrogen atom or the following group:
(式中、R5は、炭素数1〜5の直鎖状又は分岐鎖状のアルキレン基であり、mは1〜10の整数である)であり、nは2又は3である。]で表されるアルキレンジアミン化合物を含有することを特徴とするものである。 (Wherein R 5 is a linear or branched alkylene group having 1 to 5 carbon atoms, m is an integer of 1 to 10), and n is 2 or 3. The alkylenediamine compound represented by this is contained, It is characterized by the above-mentioned.
本発明の無電解ニッケルめっき液によれば、上記したアルキレンジアミン化合物を添加剤として用いることによって、従来の無電解ニッケルめっき液から形成されるニッケルめっき皮膜と比較して、耐折り曲げ性に優れたニッケルめっき皮膜を形成することができる。 According to the electroless nickel plating solution of the present invention, by using the above-described alkylenediamine compound as an additive, it has excellent bending resistance as compared with a nickel plating film formed from a conventional electroless nickel plating solution. A nickel plating film can be formed.
上記一般式(I)において、R5は、炭素数1〜5の直鎖状又は分岐鎖状のアルキレン基であり、具体例としては、メチレン、エチレン、トリメチレン、テトラメチレン、ペンタメチレン等の直鎖メチレンやイソプロピレン、イソブチレン等の分岐鎖メチレン等を挙げることができる。また、mは1〜10の整数である。m=1の場合の具体例としては、ヒドロキシメチル、ヒドロキシエチル、3−ヒドロキシプロピル、2−ヒドロキシプロピル、ヒドロキシブチル等の炭素数1〜4程度の直鎖状又は分枝鎖状のヒドロキシアルキル基を挙げることができる。以下、本願明細書では、mが2以上の場合も含めてヒドロキシアルキル基ということがある。 In the above general formula (I), R 5 is a linear or branched alkylene group having 1 to 5 carbon atoms. Specific examples thereof include straight chain such as methylene, ethylene, trimethylene, tetramethylene, pentamethylene and the like. Examples include branched chain methylene such as chain methylene, isopropylene, and isobutylene. Moreover, m is an integer of 1-10. Specific examples of m = 1 include linear or branched hydroxyalkyl groups having about 1 to 4 carbon atoms such as hydroxymethyl, hydroxyethyl, 3-hydroxypropyl, 2-hydroxypropyl, and hydroxybutyl. Can be mentioned. Hereinafter, in the present specification, it may be referred to as a hydroxyalkyl group including a case where m is 2 or more.
上記したアルキレンジアミン化合物の内で、n=2であるエチレンジアミン骨格を有する化合物の具体例は以下の通りである。
(1)R1、R2、R3及びR4が全て水素原子である化合物:
エチレンジアミン
(2)R1、R2、R3及びR4の内の3個が水素原子である化合物:
N−ヒドロキシメチルエチレンジアミン
N−ヒドロキシエチルエチレンジアミン
N−ヒドロキシプロピルエチレンジアミン
N−ヒドロキシイソプロピルエチレンジアミン
N−ヒドロキシブチルエチレンジアミン
(3)R1、R2、R3及びR4の内の2個が水素原子である化合物:
N,N’−ジヒドロキシメチルエチレンジアミン
N,N’−ジヒドロキシエチルエチレンジアミン
N,N’−ジヒドロキシプロピルエチレンジアミン
N,N’−ジヒドロキシイソプロピルエチレンジアミン
N,N’−ジヒドロキシブチルエチレンジアミン
(4)R1、R2、R3及びR4の内の1個が水素原子である化合物:
N,N,N’−トリヒドロキシメチルエチレンジアミン
N,N,N’−トリヒドロキシエチルエチレンジアミン
N,N,N’−トリヒドロキシプロピルエチレンジアミン
N,N,N’−トリヒドロキシイソプロピルエチレンジアミン
N,N,N’−トリヒドロキシブチルエチレンジアミン
(5)R1、R2、R3及びR4の全てがヒドロキシアルキル基である化合物:
N,N,N’,N’−テトラヒドロキシメチルエチレンジアミン
N,N,N’,N’−テトラヒドロキシエチルエチレンジアミン
N,N,N’,N’−テトラヒドロキシプロピルエチレンジアミン
N,N,N’,N’−テトラヒドロキシイソプロピルエチレンジアミン
下記式で表されるN,N,N’,N’−テトラポリヒドロキシプロピレンエチレンジアミン(好ましくは分子量764〜770程度)
Specific examples of the compound having an ethylenediamine skeleton in which n = 2 among the above-described alkylenediamine compounds are as follows.
(1) Compounds in which R 1 , R 2 , R 3 and R 4 are all hydrogen atoms:
Ethylenediamine (2) A compound in which three of R 1 , R 2 , R 3 and R 4 are hydrogen atoms:
N-hydroxymethylethylenediamine N-hydroxyethylethylenediamine N-hydroxypropylethylenediamine N-hydroxyisopropylethylenediamine N-hydroxybutylethylenediamine (3) Compound in which two of R 1 , R 2 , R 3 and R 4 are hydrogen atoms :
N, N′-dihydroxymethylethylenediamine N, N′-dihydroxyethylethylenediamine N, N′-dihydroxypropylethylenediamine N, N′-dihydroxyisopropylethylenediamine N, N′-dihydroxybutylethylenediamine (4) R 1 , R 2 , R A compound in which one of 3 and R 4 is a hydrogen atom:
N, N, N′-trihydroxymethylethylenediamine N, N, N′-trihydroxyethylethylenediamine N, N, N′-trihydroxypropylethylenediamine N, N, N′-trihydroxyisopropylethylenediamine N, N, N ′ -Trihydroxybutylethylenediamine (5) Compound in which all of R 1 , R 2 , R 3 and R 4 are hydroxyalkyl groups:
N, N, N ′, N′-tetrahydroxymethylethylenediamine N, N, N ′, N′-tetrahydroxyethylethylenediamine N, N, N ′, N′-tetrahydroxypropylethylenediamine N, N, N ′, N '-Tetrahydroxyisopropylethylenediamine N, N, N', N'-tetrapolyhydroxypropyleneethylenediamine represented by the following formula (preferably having a molecular weight of about 764 to 770)
また、上記したアルキレンジアミン化合物の内で、n=3であるプロパンジアミン骨格を有する化合物の具体例は以下の通りである。
(1)R1、R2、R3及びR4が全て水素原子である化合物:
プロパンジアミン
(2)R1、R2、R3及びR4の内の3個が水素原子である化合物:
N−ヒドロキシメチルプロパンジアミン
N−ヒドロキシエチルプロパンジアミン
N−ヒドロキシプロピルプロパンジアミン
N−ヒドロキシイソプロピルプロパンジアミン
N−ヒドロキシブチルプロパンジアミン
(3)R1、R2、R3及びR4の内の2個が水素原子である化合物:
N,N’−ジヒドロキシメチルプロパンジアミン
N,N’−ジヒドロキシエチルプロパンジアミン
N,N’−ジヒドロキシプロピルプロパンジアミン
N,N’−ジヒドロキシイソプロピルプロパンジアミン
N,N’−ジヒドロキシブチルプロパンジアミン
(4)R1、R2、R3及びR4の内で1個が水素原子である化合物:
N,N,N’−トリヒドロキシメチルプロパンジアミン
N,N,N’−トリヒドロキシエチルプロパンジアミン
N,N,N’−トリヒドロキシプロピルプロパンジアミン
N,N,N’−トリヒドロキシイソプロピルプロパンジアミン
N,N,N’−トリヒドロキシブチルプロパンジアミン
(5)R1、R2、R3及びR4の全てがヒドロキシアルキル基である化合物:
N,N,N’,N’−テトラヒドロキシメチルプロパンジアミン
N,N,N’,N’−テトラヒドロキシエチルプロパンジアミン
N,N,N’,N’−テトラヒドロキシプロピルプロパンジアミン
N,N,N’,N’−テトラヒドロキシイソプロピルプロパンジアミン
下記式で表されるN,N,N’,N’−テトラポリヒドロキシプロピレンプロパンジアミン
(好ましくは分子量770〜780程度)
Moreover, the specific example of the compound which has a propanediamine skeleton which is n = 3 among the above-mentioned alkylenediamine compounds is as follows.
(1) Compounds in which R 1 , R 2 , R 3 and R 4 are all hydrogen atoms:
Propanediamine (2) A compound in which three of R 1 , R 2 , R 3 and R 4 are hydrogen atoms:
Two of the N- hydroxymethyl-propane diamine N- hydroxyethyl-propane diamine N- hydroxypropyl propanediamine N- hydroxyisopropyl propanediamine N- hydroxybutyl propanediamine (3) R 1, R 2 , R 3 and R 4 Compounds that are hydrogen atoms:
N, N′-dihydroxymethylpropanediamine N, N′-dihydroxyethylpropanediamine N, N′-dihydroxypropylpropanediamine N, N′-dihydroxyisopropylpropanediamine N, N′-dihydroxybutylpropanediamine (4) R 1 , R 2 , R 3 and R 4 , one of which is a hydrogen atom:
N, N, N′-trihydroxymethylpropanediamine N, N, N′-trihydroxyethylpropanediamine N, N, N′-trihydroxypropylpropanediamine N, N, N′-trihydroxyisopropylpropanediamine N, N, N′-trihydroxybutylpropanediamine (5) Compound in which all of R 1 , R 2 , R 3 and R 4 are hydroxyalkyl groups:
N, N, N ′, N′-tetrahydroxymethylpropanediamine N, N, N ′, N′-tetrahydroxyethylpropanediamine N, N, N ′, N′-tetrahydroxypropylpropanediamine N, N, N ', N'-tetrahydroxyisopropylpropanediamine N, N, N', N'-tetrapolyhydroxypropylenepropanediamine represented by the following formula (preferably having a molecular weight of about 770 to 780)
上記したアルキレンジアミン化合物は、一種単独又は二種以上混合して用いることができる。 The above-mentioned alkylene diamine compounds can be used singly or in combination of two or more.
上記した一般式(I)で表されるアルキレンジアミン化合物の内で、特に、R1、R2、R3及びR4で表される基の少なくとも一個が水素原子であるアルキレンジアミン化合物を用いる場合には、形成されるニッケル皮膜は、耐折り曲げ性が良好であることに加えて、微細なパターンを有する被めっき物に対しても、パターン上にのみ良好なめっき被膜を形成できる特性、即ち、ファインパターン性が良好となる。 Among the alkylenediamine compounds represented by the above general formula (I), particularly when an alkylenediamine compound in which at least one of the groups represented by R 1 , R 2 , R 3 and R 4 is a hydrogen atom is used. In addition, the nickel film to be formed has not only good bending resistance but also a property that can form a good plating film only on the pattern even for an object to be plated having a fine pattern, that is, Fine pattern properties are improved.
また、R1、R2、R3及びR4で表される基の内で、1〜3個が水素原子であるアルキレンジアミン化合物を用いる場合には、上記した性能に加えて、下地が銅金属である場合に、特に密着性に優れたニッケル皮膜を形成することが可能となる。 In addition, in the case where an alkylenediamine compound in which 1 to 3 hydrogen atoms are used among the groups represented by R 1 , R 2 , R 3 and R 4 is used, in addition to the above performance, the base is made of copper. In the case of a metal, it is possible to form a nickel film having particularly excellent adhesion.
本発明の無電解ニッケルめっき液では、一般式(I)で表されるアルキレンジアミン化合物の濃度は、0.1〜100g/L程度とすることが好ましく、1〜50g/L程度とすることがより好ましい。 In the electroless nickel plating solution of the present invention, the concentration of the alkylenediamine compound represented by the general formula (I) is preferably about 0.1 to 100 g / L, and preferably about 1 to 50 g / L. More preferred.
無電解ニッケルめっき液の組成
本発明の無電解ニッケルめっき液は、自己触媒型のめっき液であり、必須成分として、水溶性ニッケル化合物、還元剤及び錯化剤を含有するものである。
Composition of Electroless Nickel Plating Solution The electroless nickel plating solution of the present invention is an autocatalytic plating solution and contains a water-soluble nickel compound, a reducing agent and a complexing agent as essential components.
水溶性ニッケル化合物としては、めっき液に可溶性であって、所定の濃度の水溶液が得られるものであれば特に限定なく使用できる。例えば、硫酸ニッケル、塩化ニッケル、スルファミン酸ニッケル、次亜リン酸ニッケル等を用いることができる。特に、溶解性が良好である点で硫酸ニッケルが好ましい。水溶性ニッケル化合物は、1種単独又は2種以上混合して用いることができる。水溶性ニッケル化合物の濃度は、0.5〜50g/L程度とすることが好ましく、2〜10g/L程度とすることがより好ましい。 The water-soluble nickel compound can be used without particular limitation as long as it is soluble in the plating solution and can obtain an aqueous solution having a predetermined concentration. For example, nickel sulfate, nickel chloride, nickel sulfamate, nickel hypophosphite, or the like can be used. In particular, nickel sulfate is preferable in terms of good solubility. A water-soluble nickel compound can be used individually by 1 type or in mixture of 2 or more types. The concentration of the water-soluble nickel compound is preferably about 0.5 to 50 g / L, and more preferably about 2 to 10 g / L.
還元剤についても特に限定はなく、無電解ニッケルめっき液で用いられている公知の還元剤を用いることができる。この様な還元剤としては、次亜リン酸、次亜リン酸塩(ナトリウム塩、カリウム塩、アンモニウム塩)、ジメチルアミンボラン、ヒドラジン等を例示できる。還元剤は1種単独又は2種以上混合して用いることができる。還元剤の濃度は、0.01〜100g/L程度とすることが好ましく、0.1〜50g/L程度とすることがより好ましい。 There is no limitation in particular also about a reducing agent, The well-known reducing agent used with the electroless nickel plating liquid can be used. Examples of such a reducing agent include hypophosphorous acid, hypophosphite (sodium salt, potassium salt, ammonium salt), dimethylamine borane, hydrazine, and the like. A reducing agent can be used individually by 1 type or in mixture of 2 or more types. The concentration of the reducing agent is preferably about 0.01 to 100 g / L, and more preferably about 0.1 to 50 g / L.
錯化剤についても特に限定はなく、無電解ニッケルめっき液で用いられている公知の錯化剤を用いることができる。この様な錯化剤としては、酢酸、蟻酸等のモノカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;マロン酸、コハク酸、アジピン酸、マレイン酸、フマール酸等のジカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;リンゴ酸、乳酸、グリコール酸、グルコン酸、クエン酸等のヒドロキシカルボン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等;エチレンジアミンジ酢酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、これらのアンモニウム塩、カリウム塩、ナトリウム塩等、エチレンジアミンテトラ酢酸、ジエチレントリアミンペンタ酢酸等のアミノポリカルボン酸やそれらのナトリウム塩、カリウム塩、アンモニウム塩等を例示できる。更に、ホスホン酸類、アミノ酸類等も錯化剤として用いることができる。これらの錯化剤は1種単独又は2種以上混合して用いることができる。 The complexing agent is not particularly limited, and a known complexing agent used in an electroless nickel plating solution can be used. Examples of such complexing agents include monocarboxylic acids such as acetic acid and formic acid, ammonium salts, potassium salts and sodium salts thereof; dicarboxylic acids such as malonic acid, succinic acid, adipic acid, maleic acid and fumaric acid, and the like. Ammonium salts, potassium salts, sodium salts, etc .; hydroxycarboxylic acids such as malic acid, lactic acid, glycolic acid, gluconic acid, citric acid, their ammonium salts, potassium salts, sodium salts, etc .; ethylenediaminediacetic acid, 1-hydroxyethylidene Examples include -1,1-diphosphonic acid, ammonium salts, potassium salts and sodium salts thereof, aminopolycarboxylic acids such as ethylenediaminetetraacetic acid and diethylenetriaminepentaacetic acid, and sodium salts, potassium salts and ammonium salts thereof. Furthermore, phosphonic acids and amino acids can also be used as complexing agents. These complexing agents can be used alone or in combination of two or more.
錯化剤の配合量は、5〜180g/L程度とすることが好ましく、10〜120g/L程度とすることがより好ましい。 The compounding amount of the complexing agent is preferably about 5 to 180 g / L, and more preferably about 10 to 120 g / L.
尚、上記した一般式(I)で表されるアルキレンジアミン化合物の内で、エチレンジアミン、プロパンジアミン等は、錯化剤としても作用する成分である。従って、錯化剤としても作用するアルキレンジアミン化合物を含む場合には、その他に錯化剤を用いることなく、アルキレンジアミン化合物のみを用いても良く、その他の錯化剤と併用しても良い。この場合には、アルキレンジアミン化合物とその他の錯化剤の合計の配合量が上記範囲内となればよい。 Of the alkylenediamine compounds represented by the general formula (I), ethylenediamine, propanediamine and the like are components that also act as a complexing agent. Accordingly, when an alkylene diamine compound that also acts as a complexing agent is included, only the alkylene diamine compound may be used without using any other complexing agent, or may be used in combination with other complexing agents. In this case, the total amount of the alkylenediamine compound and the other complexing agent may be within the above range.
本発明の無電解ニッケルめっき液では、特に、上記した錯化剤の内で、ホスホン酸類及びアミノ酸類からなる群から選ばれた少なくとも一種の成分を含む場合には、上記アルキレンジアミン化合物による効果を阻害することなく、めっき浴の安定性を大きく向上させることができる。特に、ホスホン酸類を用いる場合には、更に、ファインパターン性も向上させることができる。 In the electroless nickel plating solution of the present invention, particularly when the complexing agent includes at least one component selected from the group consisting of phosphonic acids and amino acids, the effect of the alkylenediamine compound is obtained. The stability of the plating bath can be greatly improved without hindering. In particular, when phosphonic acids are used, the fine pattern property can be further improved.
ホスホン類としては、各種のホスホン酸、その塩等を用いることができる。この様なホスホン酸類の具体例としては、アミノトリメチレンホスホン酸、1−ヒドロキシエチリデン−1,1−ジホスホン酸、エチレンジアミンテトラメチレンホスホン酸、ヘキサメチレンジアミンテトラメチレンホスホン酸、ジメチレントリアミンペンタメチレンホスホン酸、ジエチレントリアミンペンタメチレンホスホン酸、ニトリロトリメチレンホスホン酸、フェニルホスホン酸、2−ホスホノブタン−1,2,4トリカルボン酸、下記式で表されるN−ヒドロキシアルキルアミノメチルホスホン酸 As the phosphones, various phosphonic acids and salts thereof can be used. Specific examples of such phosphonic acids include aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, ethylenediaminetetramethylenephosphonic acid, hexamethylenediaminetetramethylenephosphonic acid, dimethylenetriaminepentamethylenephosphonic acid. , Diethylenetriaminepentamethylenephosphonic acid, nitrilotrimethylenephosphonic acid, phenylphosphonic acid, 2-phosphonobutane-1,2,4tricarboxylic acid, N-hydroxyalkylaminomethylphosphonic acid represented by the following formula
(式中、nは2〜6の整数である)、下記式で表されるN−ホスホノメチルアミノカルボン酸 (Wherein n is an integer of 2 to 6), N-phosphonomethylaminocarboxylic acid represented by the following formula
(式中、nは2〜6の整数である)、およびこれらのホスホン酸の塩(ナトリウム塩、カリウム塩等の金属塩、アンモニウム塩等)等を例示できる。 (Wherein n is an integer of 2 to 6), and salts of these phosphonic acids (metal salts such as sodium salts and potassium salts, ammonium salts and the like) and the like.
アミノ酸類の具体例としては、グリシン、アラニン、イミノジ酢酸、ニトリロトリ酢酸、L−グルタミン酸、L−グルタミン酸2酢酸、L−アスパラギン酸、タウリン等を挙げる ことができる。 Specific examples of amino acids include glycine, alanine, iminodiacetic acid, nitrilotriacetic acid, L-glutamic acid, L-glutamic acid diacetic acid, L-aspartic acid, taurine and the like.
上記したホスホン酸類とアミノ酸類については、それぞれ2種以上を併用することも可能である。めっき浴の安定性を向上させる効果を発揮させるためには、ホスホン酸類及びアミノ酸類からなる群から選ばれた少なくとも一種の化合物の濃度は、一般式(I)で表されるアルキレンジアミン化合物1モルに対して0.01〜10モル程度とすることが好ましい。 About the above-mentioned phosphonic acids and amino acids, it is also possible to use 2 or more types together, respectively. In order to exert the effect of improving the stability of the plating bath, the concentration of at least one compound selected from the group consisting of phosphonic acids and amino acids is 1 mole of alkylenediamine compound represented by the general formula (I). It is preferable to set it as about 0.01-10 mol with respect to it.
本発明の無電解ニッケルめっき液には、その他必要に応じて、通常用いられている各種の添加剤を配合することができる。例えば、安定剤として、硝酸鉛、酢酸鉛等の鉛塩;硝酸ビスマス、酢酸ビスマス等のビスマス塩;チオジグリコール酸等の硫黄化合物等を1種単独又は2種以上混合して添加することができる。安定剤の添加量は、特に限定的ではないが、例えば、0.01〜100mg/L程度とすることができる。 The electroless nickel plating solution of the present invention may contain various commonly used additives as necessary. For example, as a stabilizer, lead salts such as lead nitrate and lead acetate; bismuth salts such as bismuth nitrate and bismuth acetate; sulfur compounds such as thiodiglycolic acid may be added singly or in combination of two or more. it can. Although the addition amount of a stabilizer is not specifically limited, For example, it can be set as about 0.01-100 mg / L.
また、pH緩衝剤として、ホウ酸、リン酸、亜リン酸、炭酸、それらのナトリウム塩、カリウム塩、アンモニウム塩等を配合することができる。緩衝剤の配合量は特に限定的ではないが、例えば0.1〜200g/L程度とすることができる。 Further, boric acid, phosphoric acid, phosphorous acid, carbonic acid, sodium salts, potassium salts, ammonium salts and the like thereof can be blended as pH buffering agents. Although the compounding quantity of a buffering agent is not specifically limited, For example, it can be set as about 0.1-200 g / L.
更に、めっき液の浸透性を向上させるために、界面活性剤を配合することができる。界面活性剤としては特に限定はなく、ノニオン性、カチオン性、アニオン性、両性等の各種界面活性剤を1種単独又は2種以上混合して添加することができる。添加量としては、例えば、0.1〜100mg/L程度とすればよい。 Furthermore, in order to improve the permeability of the plating solution, a surfactant can be blended. The surfactant is not particularly limited, and various surfactants such as nonionic, cationic, anionic, and amphoteric can be added singly or in combination of two or more. The amount added may be, for example, about 0.1 to 100 mg / L.
本発明の無電解ニッケルめっき液のpHは、通常、2〜9程度とすればよく、3〜8程度とすることが好ましい。pH調整には、硫酸、リン酸等の無機酸および水酸化ナトリウム、アンモニア水等を使用することができる。 The pH of the electroless nickel plating solution of the present invention is usually about 2 to 9, and preferably about 3 to 8. For pH adjustment, inorganic acids such as sulfuric acid and phosphoric acid, sodium hydroxide, aqueous ammonia and the like can be used.
無電解めっき方法
本発明の無電解ニッケルめっき液を用いて無電解ニッケルめっきを行うには、常法に従って、該無電解めっき液を被めっき物に接触させればよい。通常は、該無電解ニッケルめっき液中に被めっき物を浸漬することによって、効率よくニッケルめっき皮膜を形成することができる。
Electroless Plating Method In order to perform electroless nickel plating using the electroless nickel plating solution of the present invention, the electroless plating solution may be brought into contact with the object to be plated according to a conventional method. Usually, a nickel plating film can be efficiently formed by immersing an object to be plated in the electroless nickel plating solution.
無電解ニッケルめっき液の液温は、通常、40〜98℃程度とすればよく、60〜95℃程度とすることが好ましい。また必要に応じて、めっき液の撹拌や被めっき物の揺動を行うことができる。 The liquid temperature of the electroless nickel plating solution is usually about 40 to 98 ° C, and preferably about 60 to 95 ° C. If necessary, the plating solution can be stirred and the object to be plated can be swung.
被めっき物の材質については特に限定はない。例えば、鉄、コバルト、ニッケル、パラジウム等の金属やこれらの合金等は無電解ニッケルめっきの還元析出に対して触媒性を有するので、常法に従って前処理を行った後、直接無電解ニッケルめっき皮膜を形成することができる。銅等の触媒性のない金属や、ガラス、セラミックス等については、常法に従ってパラジウム核などの金属触媒核を付着させた後に、無電解ニッケルめっき処理を行えばよい。 There is no particular limitation on the material of the object to be plated. For example, metals such as iron, cobalt, nickel, and palladium, and alloys thereof have catalytic properties for reduction deposition of electroless nickel plating. Therefore, after pretreatment according to a conventional method, direct electroless nickel plating film Can be formed. For non-catalytic metals such as copper, glass, ceramics, and the like, electroless nickel plating may be performed after attaching metal catalyst nuclei such as palladium nuclei according to a conventional method.
特に、本発明の無電解ニッケルめっき液は、ポリイミド等を用いたフレキシブル基板を被めっき物として、はんだ付け、ボンディング等を行う部分における表面処理用のめっき液として用いる場合に、耐折り曲げ性に優れ、クラックの生じ難い信頼性に優れたニッケルめっき皮膜を形成できる。この場合、ニッケルめっき皮膜の膜厚は、通常、0.2〜10μm程度とされる。また、ニッケルめっき皮膜上には、常法に従って金めっき皮膜を形成することが多い。例えば、置換めっき法により0.03〜0.1μm程度の金皮膜を形成することができ、更に、耐熱金ワイヤボンディング性のためには、置換金めっき法または還元金めっき法によって、厚さ0.2〜0.7μm程度の金皮膜を形成する場合もある。本発明の無電解ニッケルめっき液を用いて形成されたニッケルめっき皮膜は、これらの金めっき皮膜を形成する場合にも、良好な密着性を発揮することができ、耐折り曲げ性が良好であり、ハンダ付性、ワイヤボンディング性などについても良好な特性を発揮できる。 In particular, the electroless nickel plating solution of the present invention is excellent in bending resistance when used as a plating solution for surface treatment in a part to be soldered, bonded, etc., using a flexible substrate using polyimide or the like as an object to be plated. Thus, it is possible to form a nickel plating film that is less prone to cracking and excellent in reliability. In this case, the thickness of the nickel plating film is usually about 0.2 to 10 μm. Further, a gold plating film is often formed on the nickel plating film according to a conventional method. For example, a gold film having a thickness of about 0.03 to 0.1 μm can be formed by displacement plating. Further, for heat-resistant gold wire bonding, the thickness is reduced to 0 by displacement gold plating or reduction gold plating. In some cases, a gold film of about 2 to 0.7 μm may be formed. The nickel plating film formed by using the electroless nickel plating solution of the present invention can exhibit good adhesion even when these gold plating films are formed, and has good bending resistance, Good properties such as solderability and wire bonding can be exhibited.
本発明の無電解ニッケルめっき液によれば、耐折り曲げ性に優れた無電解ニッケルめっき皮膜を形成することができる。更に、アルキレンジアミン化合物の種類を選択することによって、ファインパターン性、銅素材に対する密着性などをより一層向上させることも可能である。 According to the electroless nickel plating solution of the present invention, an electroless nickel plating film excellent in bending resistance can be formed. Furthermore, by selecting the type of the alkylenediamine compound, it is possible to further improve the fine pattern property, the adhesion to the copper material, and the like.
また、該アルキレンジアミン化合物をホスホン酸類及びアミノ酸類からなる群から選ばれた少なくとも一種の成分と併用する場合には、めっき浴の安定性を大きく向上させることができる。 Further, when the alkylenediamine compound is used in combination with at least one component selected from the group consisting of phosphonic acids and amino acids, the stability of the plating bath can be greatly improved.
従って、本発明の無電解ニッケルめっき液を用いることによって、例えば、プリント配線板などを被めっき物とする場合に、耐折り曲げ性に優れた信頼性の高いニッケルめっき皮膜を形成することが可能となる。 Therefore, by using the electroless nickel plating solution of the present invention, for example, when a printed wiring board or the like is to be plated, it is possible to form a highly reliable nickel plating film having excellent bending resistance. Become.
以下、実施例を挙げて本発明を更に詳細に説明する。 Hereinafter, the present invention will be described in more detail with reference to examples.
実施例1
下記表1に示す浴No.1〜16(本発明めっき浴)及び浴No.A(比較浴)の各無電解ニッケルめっき液を調製した。
Example 1
Bath No. 1 shown in Table 1 below. 1-16 (invention plating bath) and bath no. Each electroless nickel plating solution of A (comparative bath) was prepared.
上記した各無電解ニッケルめっき液を用いて下記の方法でめっき試験を行った。 A plating test was performed by the following method using each of the above electroless nickel plating solutions.
被めっき物としては、大きさ2×7cmのポリイミド樹脂(厚さ25μm)上に線幅75μm、スリット幅75μmの銅パターン(銅厚18μm)を40本と、1×4cmの銅パッドを形成したものを用いた。 As an object to be plated, 40 copper patterns (copper thickness 18 μm) having a line width of 75 μm and a slit width of 75 μm were formed on a 2 × 7 cm polyimide resin (thickness 25 μm) and a 1 × 4 cm copper pad. A thing was used.
この被めっき物について、脱脂処理を行った後、過硫酸Na溶液で0.5μm程度のエッチングを行い、ICPアクセラ(奥野製薬工業(株)製、Pd含有触媒液)を200ml/L含む触媒液を用いて、室温で1分間触媒付与を行った後、上記しためっき浴1リットル中に被めっき物を浸漬し、表1に示す浴温度及びめっき処理時間で厚さ約3μmの無電解ニッケルめっき皮膜を形成した。 About this to-be-plated thing, after performing a degreasing process, it etches about 0.5 micrometer with a persulfuric-acid Na solution, The catalyst liquid containing 200 ml / L of ICP Axela (Okuno Pharmaceutical Co., Ltd. product, Pd containing catalyst liquid). After applying the catalyst for 1 minute at room temperature, the object to be plated was immersed in 1 liter of the above plating bath, and the electroless nickel plating with a thickness of about 3 μm at the bath temperature and plating treatment time shown in Table 1 A film was formed.
得られた各試料について、下記の方法で耐折り曲げ性(皮膜の柔軟性)、ファインパターン性(めっきの拡がりの有無)及び銅素材に対する密着性を評価した。結果を下記表2に示す。
* 耐折り曲げ性:
線幅75μmの配線パターン部分について、めっき面が表面となるようにして、直径0.8mmのステンレス製棒に約180度の角度まで巻き付けることによって、無電解ニッケルめっき皮膜の耐折り曲げ性試験を行った。試験後の各試料について、顕微鏡観察(1000倍)を行い、めっき皮膜の割れの有無を調べた。結果については、クラックが認められない場合を○印、クラックの発生が認められた場合を×印で示す。
* ファインパターン性
めっき後の各試料の線幅75μmの配線パターン部分について、顕微鏡観察(1000倍)によって、銅パターン外へのめっき拡がりの有無を調べた。結果については、めっき拡がりが全くない場合を◎印、僅かにめっき拡がりが認められた場合を○印、めっき拡がりが多数生じた場合を△印で示す。
* 銅素材との密着性:
面積1×4cmのパッド部分について、カッターナイフを用いてニッケルめっき皮膜の表面に切り込みを入れて、1mm角のマス目を100個形成し、粘着テープを貼り付けて、垂直方向に引き剥がした。この際に剥離したマス目の数を計測することによってニッケルめっき皮膜の密着性を評価した。剥離したマス目が0の場合を○印、1〜10個の場合を△印で示す。
About each obtained sample, the bending resistance (film | membrane flexibility), fine pattern property (presence of the spreading of plating), and the adhesiveness with respect to a copper raw material were evaluated by the following method. The results are shown in Table 2 below.
* Bending resistance:
A wire pattern part with a line width of 75 μm is subjected to a bending resistance test of an electroless nickel plating film by winding it around a stainless steel rod having a diameter of 0.8 mm to an angle of about 180 degrees with the plating surface being the surface. It was. About each sample after a test, the microscope observation (1000 times) was performed and the presence or absence of the crack of a plating film was investigated. As for the results, a case where no crack is observed is indicated by a mark ◯, and a case where a crack is observed is indicated by a mark X.
* Fine pattern property About the wiring pattern part with a line | wire width of 75 micrometers of each sample after plating, the presence or absence of the plating spreading out of a copper pattern was investigated by microscopic observation (1000 times). As for the results, the case where there is no plating spread is indicated by ◎, the case where slight plating spread is observed is indicated by ○, and the case where many plating spreads are indicated by Δ.
* Adhesion with copper material:
A pad portion having an area of 1 × 4 cm was cut into the surface of the nickel plating film using a cutter knife to form 100 1 mm square cells, and an adhesive tape was attached thereto, which was peeled off in the vertical direction. The adhesion of the nickel plating film was evaluated by measuring the number of squares peeled at this time. The case where the peeled square is 0 is indicated by a mark ◯, and the case where the number is 10 is indicated by a mark △.
以上の結果から明らかなように、アルキレンジアミン化合物を添加剤として含む浴No.1〜16の無電解ニッケルめっき浴から形成されたニッケルめっき皮膜は、耐折り曲げ性試験においてクラックが全く発生せず、耐折り曲げ性に優れた柔軟なめっき皮膜であることが確認できた。 As is apparent from the above results, bath No. 1 containing an alkylenediamine compound as an additive was used. It was confirmed that the nickel plating film formed from 1 to 16 electroless nickel plating baths was a flexible plating film excellent in bending resistance because no crack was generated in the bending resistance test.
更に、窒素原子に少なくとも一個の水素原子が結合したアルキレンジアミン化合物を添加剤として含む無電解ニッケルめっき浴(浴No.1〜6及び9〜14)については、ファインパターン性が特に良好であり、これらの内で、置換基として少なくとも一個のヒドロキシアルキル基を有するアルキレンジアミン化合物を含む無電解ニッケルめっき浴(浴No.2〜6及び10〜14)から形成されたニッケルめっき皮膜は、銅素材との密着性についても非常に良好であった。 Furthermore, for an electroless nickel plating bath (bath Nos. 1 to 6 and 9 to 14) containing an alkylenediamine compound in which at least one hydrogen atom is bonded to a nitrogen atom as an additive, the fine pattern property is particularly good. Among these, a nickel plating film formed from an electroless nickel plating bath (bath Nos. 2 to 6 and 10 to 14) containing an alkylenediamine compound having at least one hydroxyalkyl group as a substituent includes a copper material, The adhesion was also very good.
実施例2
下記表3に示す浴No.17〜23(本発明めっき浴)の各無電解ニッケルめっき液を調製した。
Example 2
Bath No. shown in Table 3 below. Each electroless nickel plating solution of 17-23 (present invention plating bath) was prepared.
被めっき物として、大きさ2×7cmのポリイミド樹脂(厚さ25μm)上に線幅40μm、スリット幅40μmの銅パターン(銅厚18μm)を40本と、1×4cmの銅パッドを形成したものを用いて、実施例1と同様にして触媒付与までの処理を行った後、上記しためっき浴1リットル中に被めっき物を浸漬し、表3に示す浴温度及びめっき処理時間で、厚さ約3μmの無電解ニッケルめっき皮膜を形成した。尚、実施例2において用いた被めっき物は、実施例1で用いた被めっき物と比較して、銅パターンのピッチ幅が狭く、ファインパターン性について、より精密な評価ができるものである。 As the object to be plated, 40 copper patterns (copper thickness 18 μm) with a line width of 40 μm and a slit width of 40 μm are formed on a 2 × 7 cm polyimide resin (thickness 25 μm), and a 1 × 4 cm copper pad is formed. After the treatment up to the application of the catalyst in the same manner as in Example 1, the object to be plated was immersed in 1 liter of the plating bath described above, and the thickness was determined at the bath temperature and plating treatment time shown in Table 3. An electroless nickel plating film having a thickness of about 3 μm was formed. In addition, the to-be-plated object used in Example 2 has a narrow pitch width of a copper pattern compared with the to-be-plated object used in Example 1, and can perform more precise evaluation about fine pattern property.
上記した方法で形成されたニッケルめっき皮膜について、実施例1と同様にして、耐折り曲げ性、ファインパターン性及び銅素材に対する密着性を評価した。更に、各無電解ニッケルめっき液の浴安定性の評価として、めっき液をガラスビーカーに入れ、90℃で2日間加温を行い、ビーカー底へのニッケル析出の有無を判定した。浴安定性試験の結果については、ビーカー底におけるNiの析出が無い場合を◎印、ビーカー底にNi核の痕跡が認められる場合を○印、ビーカー底にニッケル析出が明らかに認められる場合を△印で示す。以上の結果を下記表4に示す。 About the nickel plating film formed by the above-mentioned method, it carried out similarly to Example 1, and evaluated bending resistance, fine pattern property, and the adhesiveness with respect to a copper raw material. Further, as an evaluation of the bath stability of each electroless nickel plating solution, the plating solution was placed in a glass beaker and heated at 90 ° C. for 2 days to determine whether nickel was deposited on the bottom of the beaker. As for the results of the bath stability test, the symbol ◎ indicates that there is no Ni deposition on the beaker bottom, the symbol ○ indicates that there is a trace of Ni nuclei on the beaker bottom, and Δ indicates that nickel deposition is clearly observed on the beaker bottom. Shown with a mark. The above results are shown in Table 4 below.
以上の結果から明らかなように、アルキレンジアミン化合物を添加剤として含む浴No.17の無電解ニッケルめっき浴から形成されたニッケルめっき皮膜は、耐折り曲性、ファインパターン性及び密着性の全ての特性について良好であったが、更に、ホスホン酸類又はアミノ酸類を含む浴No.18〜23の無電解めっき浴は、浴安定性がより優れたものであった。特に、ホスホン酸類を含む浴No.18〜20の無電解ニッケルめっき液については、銅回路のピッチ幅の狭い被めっき物に対してもめっき拡がりの発生が認められず、ファインパターン性についても非常に良好であった。 As is apparent from the above results, bath No. 1 containing an alkylenediamine compound as an additive was used. The nickel plating film formed from the electroless nickel plating bath of No. 17 was good in all the characteristics of bending resistance, fine pattern property and adhesion, but further, bath No. 1 containing phosphonic acids or amino acids. 18-23 electroless plating baths were more excellent in bath stability. In particular, bath no. With respect to the electroless nickel plating solution of 18 to 20, the occurrence of plating spread was not observed even on the object to be plated with a narrow pitch width of the copper circuit, and the fine pattern property was also very good.
Claims (4)
基:
前記一般式(I)で表されるアルキレンジアミン化合物が、
(A)R 1 、R 2 、R 3 及びR 4 のうちの2個が水素原子である化合物
(B)R 1 、R 2 、R 3 及びR 4 のうちの1個が水素原子である化合物
のうち少なくともいずれか一つである、フレキシブル基板に対する自己触媒型無電解ニッケルめっき液用耐折り曲げ性向上剤。 The following general formula (I)
The alkylenediamine compound represented by the general formula (I) is:
(A) Compound in which two of R 1 , R 2 , R 3 and R 4 are hydrogen atoms
(B) A compound in which one of R 1 , R 2 , R 3 and R 4 is a hydrogen atom
A bending resistance improver for an electrocatalytic electroless nickel plating solution for a flexible substrate, which is at least one of the above .
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