JP3035763B2 - Electroless palladium plating solution - Google Patents

Electroless palladium plating solution

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Publication number
JP3035763B2
JP3035763B2 JP5235871A JP23587193A JP3035763B2 JP 3035763 B2 JP3035763 B2 JP 3035763B2 JP 5235871 A JP5235871 A JP 5235871A JP 23587193 A JP23587193 A JP 23587193A JP 3035763 B2 JP3035763 B2 JP 3035763B2
Authority
JP
Japan
Prior art keywords
plating solution
palladium
plating
mol
electroless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5235871A
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Japanese (ja)
Other versions
JPH0762549A (en
Inventor
陽太郎 新井
浩二 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kojima Chemicals Co Ltd
Original Assignee
Kojima Chemicals Co Ltd
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Priority to JP5235871A priority Critical patent/JP3035763B2/en
Publication of JPH0762549A publication Critical patent/JPH0762549A/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、無電解パラジウムめっ
き液に関する。
The present invention relates to an electroless palladium plating solution.

【0002】[0002]

【従来の技術】従来より電子部品の電気接点部には、耐
食性を有し、電気的特性の優れた貴金属による表面被覆
を施すことが有効とされている。現在工業的に多く採用
されている貴金属による表面被覆方法は、貴金属めっき
方法であるが、この方法では、電気的に孤立している部
分への表面被覆は不可能である。一方、無電解めっき方
法によると、電気的に孤立している部分でも表面被覆が
可能であるため、従来、電気的に孤立している部分への
貴金属表面被覆は無電解金めっきが行われている。しか
しながら、金の市場価格は著しく高いため、金の代替と
して他の貴金属による表面被覆が検討され、特にパラジ
ウムは白金族の中でも最も安価であるため、接点材料に
限らず、新しい機能性材料として広い範囲での工業的利
用がなされている。
2. Description of the Related Art Conventionally, it has been effective to apply a surface coating to an electrical contact portion of an electronic component with a noble metal having corrosion resistance and excellent electrical characteristics. The surface coating method using a noble metal, which is currently widely used in industry, is a noble metal plating method, but it is impossible to coat a surface that is electrically isolated by this method. On the other hand, according to the electroless plating method, the surface coating can be performed even on an electrically isolated portion, so that noble metal surface coating on an electrically isolated portion is conventionally performed by electroless gold plating. I have. However, since the market price of gold is remarkably high, surface coating with other noble metals has been considered as an alternative to gold. Especially, palladium is the cheapest among the platinum group, so it is widely used as a new functional material not only as a contact material Industrial use in a range.

【0003】従来、使用されている無電解パラジウムめ
っき液としては、例えば、2価のパラジウム塩、エチレ
ンジアミン四酢酸、エチレンジアミン及び次亜リン酸ナ
トリウムからなる無電解パラジウムめっき液(特公昭4
6−26764号公報)。パラジウム化合物、アンモニ
ア及びアミン化合物の少なくとも1種、2価の硫黄化合
物を含有する有機化合物、並びに次亜リン酸化合物及び
水素化ホウ素化合物の少なくとも1種を必須成分として
含有する無電解パラジウムめっき液(特開昭62−12
4280号公報)等が知られている。
Conventionally used electroless palladium plating solutions include, for example, an electroless palladium plating solution comprising divalent palladium salt, ethylenediaminetetraacetic acid, ethylenediamine and sodium hypophosphite (Japanese Patent Publication No. Sho.
No. 6-26764). Electroless palladium plating solution containing as essential components at least one of a palladium compound, ammonia and an amine compound, an organic compound containing a divalent sulfur compound, and at least one of a hypophosphorous compound and a borohydride compound ( JP-A-62-12
No. 4280) is known.

【0004】[0004]

【発明が解決すべき課題】上記の特公昭46−2676
4号の無電解パラジウムめっき液は、貯蔵安定性が悪
く、短時間で分解するという欠陥を有していた。また、
このめっき液から得られためっき皮膜は何れもクラック
が多く、ハンダ付性もよくないため、電子部品への適用
には難点があった。また、特開昭62−124280号
で開示された無電解パラジウムめっき液は、還元成分で
ある次亜リン酸化合物やホウ素化合物に由来するリン、
ホウ素がめっき皮膜中に混入するため、純粋なパラジウ
ムめっき皮膜と比べて硬さ等に著しいバラツキが生ずる
欠陥があった。
SUMMARY OF THE INVENTION The above mentioned Japanese Patent Publication No. Sho 46-2676.
The No. 4 electroless palladium plating solution had poor storage stability and had a defect of decomposing in a short time. Also,
Each of the plating films obtained from this plating solution has many cracks and poor solderability, and thus has a difficulty in application to electronic components. Further, the electroless palladium plating solution disclosed in Japanese Patent Application Laid-Open No. Sho 62-124280 discloses a phosphorous compound derived from a hypophosphorous compound or a boron compound as a reducing component.
Since boron was mixed in the plating film, there was a defect that the hardness and the like were significantly varied as compared with the pure palladium plating film.

【0005】本発明者らは、上記した現状に鑑みて、工
業的規模においても実用可能であって、しかも純度の高
いパラジウム皮膜を形成しうる無電解パラジウムめっき
液を得るべく鋭意研究を重ねた結果、無電解パラジウム
めっき液の還元剤としてギ酸、ギ酸ナトリウム及びギ酸
カリウム等を使用し、安定剤としてアンモニア及びアミ
ン化合物の少なくとも1種を使用して構成した無電解パ
ラジウムめっき液は、適度な析出速度を有し、安定性に
優れ、得られためっき皮膜はクラックの殆どないハンダ
付性の良好なものであり、しかもめっき皮膜は、還元剤
に由来する不純物の殆どない高純度のパラジウム皮膜で
あることを知見して本発明に到達した。
In view of the above situation, the present inventors have conducted intensive studies to obtain an electroless palladium plating solution that can be used on an industrial scale and that can form a highly pure palladium film. As a result, formic acid, sodium formate and formic acid were used as reducing agents for the electroless palladium plating solution.
An electroless palladium plating solution composed of potassium or the like and using at least one of ammonia and an amine compound as a stabilizer has an appropriate deposition rate, is excellent in stability, and the obtained plating film has cracks. It has been found that the plating film is a high-purity palladium film having almost no impurities derived from the reducing agent, and has a good solderability, and has a low purity.

【0006】[0006]

【発明を解決するための手段】すなわち、本発明は (1)(a)パラジウム化合物0.0001〜0.5モ
ル/l、(b)アンモニア及びアミン化合物の少なくと
も1種0.0005〜8モル/l(c)ギ酸、ギ酸ナト
リウム及びギ酸カリウムから選ばれた少なくとも1種
0.005〜5モル/lを含んで成ることを特徴とする
無電解パラジウムめっき液、 (2)(c)成分がクエン酸または酒石酸を含有する
求項1記載の無電解パラジウムめっき液、を提供するこ
とを目的とする。
That is, the present invention relates to (1) (a) 0.0001 to 0.5 mol / l of a palladium compound, and (b) 0.0005 to 8 mol of at least one of ammonia and an amine compound. / L (c) formic acid, sodium formate
An electroless palladium plating solution comprising at least one member selected from the group consisting of lithium and potassium formate in an amount of 0.005 to 5 mol / l, (2) an electroless palladium plating solution wherein component (c) contains citric acid or tartaric acid. An object of the present invention is to provide an electroless palladium plating solution according to claim 1.

【0007】以下、本発明を更に詳細に説明する。本発
明で使用するパラジウム化合物とは、塩化パラジウム、
塩化パラジウムナトリウム、塩化パラジウムカリウム、
塩化パラジウムアンモニウム、硫酸パラジウム及び酢酸
パラジウム等の水溶性パラジウム化合物である。上記無
電解パラジウムめっき液中のパラジウム化合物の使用濃
度は、0.0001〜0.5モル/lの範囲が好まし
い。0.0001モル/l以下の濃度では、めっき皮膜
析出速度が遅くなるので好ましくなく、また、0.5モ
ル/l以上では、析出速度がより向上することがないの
で、実用的ではない。
Hereinafter, the present invention will be described in more detail. The palladium compound used in the present invention is palladium chloride,
Sodium palladium chloride, potassium palladium chloride,
It is a water-soluble palladium compound such as palladium ammonium chloride, palladium sulfate and palladium acetate. The use concentration of the palladium compound in the electroless palladium plating solution is preferably in the range of 0.0001 to 0.5 mol / l. A concentration of 0.0001 mol / l or less is not preferable because the deposition rate of the plating film becomes slow, and a concentration of 0.5 mol / l or more is not practical because the deposition rate does not further improve.

【0008】本発明のめっき液では、液の安定性を維持
するために、アンモニア及びアミン化合物の少なくとも
1種が用いられる。アンモニア及びアミン化合物は、め
っき液中のパラジウムと錯体を形成してこれらの成分を
液中に安定に保持する作用をなし、液の安定化に寄与す
る。上記のアンモニア及びアミン化合物の濃度は0.0
005〜8モル/l、好ましくは0.01〜5モル/l
である。アンモニアを単独で用いる場合には、めっき液
の安定性向上のために0.05モル/l以上の濃度とす
るのがより好ましい。アンモニア及びアミン化合物の濃
度が高い程めっき液の安定性は良好になるが、上記した
濃度を上回ると不経済であり、特にアンモニアを用いる
場合には、臭気等により作業環境が悪くなるので好まし
くない。また、上記の濃度を下回る場合には、めっき液
の安定性が低下してパラジウムの錯体が分離し易くなる
ので好ましくない。
In the plating solution of the present invention, at least one of ammonia and an amine compound is used to maintain the stability of the solution. Ammonia and the amine compound form a complex with palladium in the plating solution to stably hold these components in the solution, thereby contributing to the stabilization of the solution. The concentration of the ammonia and the amine compound is 0.0
005 to 8 mol / l, preferably 0.01 to 5 mol / l
It is. When using ammonia alone, the concentration is more preferably 0.05 mol / l or more in order to improve the stability of the plating solution. The higher the concentration of ammonia and the amine compound, the better the stability of the plating solution. However, if the concentration is higher than the above, it is uneconomical. Particularly when ammonia is used, the working environment is deteriorated due to odor and the like, which is not preferable. . On the other hand, if the concentration is lower than the above, the stability of the plating solution is lowered and the palladium complex is easily separated, which is not preferable.

【0009】本発明で用いる上記のアミン化合物として
は、例えば、メチルアミン、エチルアミン、プロピルア
ミン、トリメチルアミン、ジメチルエチルアミン、等の
モノアミン類、メチレンジアミン、エチレンジアミン、
テトラメチレンジアミン、ヘキサメチレンジアミン等の
ジアミン類、ジエチレントリアミン、ペンタエチレンヘ
キサミン等のポリアミン類、その他のアミノ酸類とし
て、エチレンジアミン四酢酸及びそのナトリウム塩、カ
リウム塩、アンモニウム塩、ニトリロ三酢酸及びそのナ
トリウム塩、カリウム塩、アンモニウム塩、グリシン、
イミノジ酢酸等が挙げられる。本発明では、上記したア
ンモニア及びアミン化合物の少なくとも1種を使用すれ
ばよいが、アンモニアを単独で使用した場合、めっきが
析出開始するまでの時間が長くなることがある。この場
合、酢化剤としてアミン化合物を添化することにより時
間を短縮することができる。上記のアミン化合物を添加
しためっき液では、めっき皮膜の厚付けを行った場合の
めっき皮膜の外観が特に良好になる。
Examples of the amine compound used in the present invention include monoamines such as methylamine, ethylamine, propylamine, trimethylamine and dimethylethylamine, methylenediamine, ethylenediamine, and the like.
Diamines such as tetramethylenediamine, hexamethylenediamine, diaminetriamine, polyamines such as pentaethylenehexamine, and other amino acids, ethylenediaminetetraacetic acid and its sodium salt, potassium salt, ammonium salt, nitrilotriacetic acid and its sodium salt, Potassium salt, ammonium salt, glycine,
And iminodiacetic acid. In the present invention, at least one of the above-mentioned ammonia and amine compounds may be used. However, when ammonia is used alone, the time until plating starts to be deposited may be long. In this case, the time can be shortened by adding an amine compound as an acetylating agent. With the plating solution to which the above-mentioned amine compound is added, the appearance of the plating film when the plating film is thickened is particularly good.

【0010】次に本発明で使用されるギ酸、ギ酸ナトリ
ウムおよびギ酸カリウムのめっき液中における使用濃度
は、0.005〜5モル/l、好ましくは0.01〜1
モル/lである。0.005モル/l以下の濃度では、
めっき皮膜が十分に形成されず、また5モル/l以上の
濃度では、析出速度は平衡状態となりそれ以上向上する
ことはないため実用的でない。
Next , formic acid and sodium formate used in the present invention.
The concentration of chromium and potassium formate used in the plating solution is 0.005 to 5 mol / l, preferably 0.01 to 1 mol / l.
Mol / l. At a concentration of 0.005 mol / l or less,
If the plating film is not sufficiently formed, and if the concentration is 5 mol / l or more, the deposition rate is in an equilibrium state and cannot be further improved, so that it is not practical.

【0011】本発明のめっき液は、pH3〜10の範囲
でもちいられる。このpH範囲において良好なめっき皮
膜を形成することができる。めっき液のpH調整は、塩
酸、硫酸等の酸や水酸化ナトリウム、水酸化カリウム等
のアルカリ性物質でなされる。
The plating solution of the present invention can be used in a pH range of 3 to 10. In this pH range, a good plating film can be formed. The pH of the plating solution is adjusted with an acid such as hydrochloric acid or sulfuric acid or an alkaline substance such as sodium hydroxide or potassium hydroxide.

【0012】本発明のめっき液は、20〜90℃という
広い範囲の温度において、めっきが可能であり、特に4
0〜80℃の液温度のときに平滑で光沢のある良好なめ
っき皮膜が得られる。また、液温度が高いほどめっき皮
膜の析出速度は速くなる傾向にあり、上記した温度範囲
内で適宜温度を設定することにより任意の析出速度とす
ることができる。さらにまた、本発明のめっき液では、
めっき皮膜の析出速度は、めっき液の温度のほかに、パ
ラジウム濃度にも依存することから、パラジウム濃度を
適宜設定することによってもめっき皮膜の析出速度を調
整できるので、めっき皮膜の膜厚のコントロールが容易
である。
The plating solution of the present invention can be plated at a wide temperature range of 20 to 90 ° C.
When the solution temperature is 0 to 80 ° C., a smooth, glossy and good plating film is obtained. Also, the higher the liquid temperature, the higher the deposition rate of the plating film tends to be, and an arbitrary deposition rate can be obtained by appropriately setting the temperature within the above-mentioned temperature range. Furthermore, in the plating solution of the present invention,
Since the deposition rate of the plating film depends not only on the temperature of the plating solution but also on the palladium concentration, the deposition rate of the plating film can be adjusted by appropriately setting the palladium concentration. Is easy.

【0013】本発明のめっき液によりめっき皮膜を形成
するには、上記した温度範囲内のめっき液中にパラジウ
ム皮膜の還元析出に対して触媒性のある基質を浸漬すれ
ばよい。上記の触媒性のある基質としては、例えば、
鉄、ニッケル、コバルト、金、銀、銅、白金、パラジウ
ム及びこれらの合金等が挙げられる。また、樹脂、ガラ
ス、セラミックス等の触媒性のない基質であっても、セ
ンシタイジングーアクチベーター法等の公知の方法で触
媒性を付与することによって上記の方法と同様にめっき
液中に浸漬してめっき皮膜を形成することができる。本
発明の無電解パラジウムめっき液によるパラジウム皮膜
の析出は、自己触媒的に進行する。そのため有孔度が小
さく、しかも密着性の優れた皮膜が得られる。
In order to form a plating film with the plating solution of the present invention, a substrate having a catalytic property for reductive deposition of the palladium film may be immersed in the plating solution within the above-mentioned temperature range. Examples of the catalytic substrate include, for example,
Examples include iron, nickel, cobalt, gold, silver, copper, platinum, palladium, and alloys thereof. In addition, even a substrate having no catalytic property such as resin, glass, and ceramics may be immersed in a plating solution in the same manner as described above by imparting catalytic property by a known method such as a sensitizing-activator method. Thus, a plating film can be formed. The deposition of the palladium film by the electroless palladium plating solution of the present invention proceeds autocatalytically. Therefore, a film having a low porosity and excellent adhesion can be obtained.

【0014】[0014]

【発明の効果】本発明の無電解パラジウムめっき液は、
液の保存安定性が極めて良好であり、低温で析出が可能
であるため、作業性が良く作業環境も良好である。ま
た、析出速度は、パラジウム濃度と液温度に依存するた
め、めっき膜厚のコントロールが容易である。そしてめ
っき皮膜へのリン、ホウ素等の混入がないため、触媒活
性の良好な高純度パラジウムが得られる。本発明のめっ
き液によって得られためっき皮膜は、クラックが非常に
少なく、ハンダ付け性、ワイヤーボンディング性に優れ
ている。本発明のめっき液は、上記したように優れた特
性を有するため、高い信頼性が要求される各種電子部品
のめっき材料としてその実用価値大である。
The electroless palladium plating solution of the present invention comprises:
Since the storage stability of the liquid is extremely good and precipitation can be performed at a low temperature, the workability is good and the working environment is good. Further, since the deposition rate depends on the palladium concentration and the solution temperature, it is easy to control the plating film thickness. Since no phosphorus, boron, or the like is mixed into the plating film, high-purity palladium having good catalytic activity can be obtained. The plating film obtained by the plating solution of the present invention has very few cracks and is excellent in solderability and wire bonding. Since the plating solution of the present invention has excellent characteristics as described above, it has a great practical value as a plating material for various electronic components requiring high reliability.

【0015】[0015]

【実施例】以下、実施例により本発明を具体的に説明す
る。
The present invention will be described below in detail with reference to examples.

【0016】実施例1 めっき液の組成 塩化パラジウム 0.02モル/l エチレンジアミン 0.08モル/l ギ酸ナトリウム 0.15モル/l 上記のめっき液を塩酸及び水酸化ナトリウムによりpH
6.0に調整し、液温度70℃において、予め無電解ニ
ッケルめっきを施した銅板を60分間浸漬した結果、膜
厚1.1μmのパラジウムめっきが得られた。
Example 1 Composition of plating solution Palladium chloride 0.02 mol / l Ethylenediamine 0.08 mol / l Sodium formate 0.15 mol / l The above plating solution was adjusted to pH with hydrochloric acid and sodium hydroxide.
It was adjusted to 6.0, and at a liquid temperature of 70 ° C., a copper plate preliminarily subjected to electroless nickel plating was immersed for 60 minutes. As a result, a 1.1 μm-thick palladium plating was obtained.

【0017】実施例2 めっき液の組成 塩化パラジウム 0.02モル/l エチレンジアミン 0.08モル/lギ酸 0.15モル/l クエン酸 0.05モル/l 上記のめっき液を塩酸及び水酸化ナトリウムによりpH
6.0に調整し、液温度70℃において、予め無電解ニ
ッケルめっきを施した銅板を60分間浸漬した結果、膜
厚2.4μmのパラジウムめっきが得られた。
Example 2 Composition of plating solution Palladium chloride 0.02 mol / l Ethylenediamine 0.08 mol / l Formic acid 0.15 mol / l Citric acid 0.05 mol / l The above plating solution was treated with hydrochloric acid and sodium hydroxide. By pH
It was adjusted to 6.0, and at a liquid temperature of 70 ° C., a copper plate preliminarily subjected to electroless nickel plating was immersed for 60 minutes. As a result, 2.4 μm-thick palladium plating was obtained.

【0018】実施例3 実施例2と同一組成のめっき液を塩酸及び水酸化ナトリ
ウムによりpH6.0に調整し、液温度を55℃、61
℃、70℃及び80℃の4通りで、予め無電解ニッケル
めっきを施した銅板を10分間浸漬した結果、膜厚が
0.1μm、0.2μm、0.4μm、及び0.6μm
のパラジウムめっきがえられた。
Example 3 A plating solution having the same composition as in Example 2 was adjusted to pH 6.0 with hydrochloric acid and sodium hydroxide, and the solution temperature was 55 ° C. and 61 ° C.
C, 70 ° C. and 80 ° C., the copper plate pre-electroless nickel plated was immersed for 10 minutes, resulting in a film thickness of 0.1 μm, 0.2 μm, 0.4 μm, and 0.6 μm
Palladium plating was obtained.

【0019】実施例4 実施例2と同一組成のめっき液を塩酸及び水酸化ナトリ
ウムによりpH6.0に調整し、液温度70℃におい
て、予め無電解ニッケルめっきを施した銅板を10分
間、20分間、30分間及び60分間浸漬した結果、膜
厚が0.3μm、0.6μm、1.1μm、及び2.3
μmのパラジウムめっきがえられた。その結果を図1に
示す。この図1からみて浸漬時間とめっき厚は比例関係
にあり、析出も自己触媒的に進行し、しかも析出速度の
安定性が極めて良好であることがわかる。更にこのめっ
き液を90℃に加熱したが、めっき液の分解が生じるこ
となく、室温で1年間密閉保存した場合にもめっき液の
分解は生じなかった。
Example 4 A plating solution having the same composition as in Example 2 was adjusted to pH 6.0 with hydrochloric acid and sodium hydroxide. At a solution temperature of 70 ° C., a copper plate preliminarily subjected to electroless nickel plating was treated for 10 minutes and 20 minutes. , 30 minutes and 60 minutes immersion resulted in film thicknesses of 0.3 μm, 0.6 μm, 1.1 μm, and 2.3.
A μm palladium plating was obtained. The result is shown in FIG. From FIG. 1, it can be seen that the immersion time and the plating thickness are in a proportional relationship, the deposition proceeds autocatalytically, and the stability of the deposition rate is extremely good. Further, the plating solution was heated to 90 ° C., but the plating solution did not decompose, and the plating solution did not decompose even when stored tightly at room temperature for one year.

【0020】[0020]

【図1】FIG.

【0021】実施例5 めっき液の組成 塩化パラジウム 0.04モル/l エチレンジアミン 0.08モル/lギ酸カリウム 0.30モル/l 酒石酸 0.05モル/l 上記のめっき液を塩酸及び水酸化カリウムによりpH
6.0に調整し、液温度70℃において、予め無電解ニ
ッケルめっきを施した銅板を8時間浸漬し、厚付けした
パラジウムめっきの断面硬度を測定した結果、ビッカー
ス硬度で170Hvであった。また、大気中で300
℃、2時間加熱後の断面硬度もビッカース硬度170H
vであった。
The hydrochloric acid and potassium hydroxide Example 5 Plating solution composition palladium chloride 0.04 mol / l ethylenediamine 0.08 mol / l potassium formate 0.30 mol / l tartaric acid 0.05 mol / l The above plating solution By pH
Adjusted to 6.0, at a liquid temperature of 70 ° C., a copper plate preliminarily subjected to electroless nickel plating was immersed for 8 hours, and the section hardness of the thick palladium plating was measured. As a result, the Vickers hardness was 170 Hv. In addition, 300
Vickers hardness 170H after heating for 2 hours
v.

【0022】実施例6 めっき液の組成 塩化パラジウムアンモニウム 0.02モル/l エチレンジアミン四酢酸 0.03モル/l ギ酸ナトリウム 0.15モル/l アンモニア水(28%) 0.05モル/l 上記のめっき液を塩酸及び水酸化ナトリウムによりpH
6.0に調整し、液温度60℃において、予め無電解ニ
ッケルめっきを施した銅板を20分間浸漬した結果、膜
厚0.2μmのパラジウムめっきが得られた。
Example 6 Composition of plating solution Ammonium palladium chloride 0.02 mol / l Ethylenediaminetetraacetic acid 0.03 mol / l Sodium formate 0.15 mol / l Aqueous ammonia (28%) 0.05 mol / l PH of plating solution with hydrochloric acid and sodium hydroxide
It was adjusted to 6.0, and at a liquid temperature of 60 ° C., a copper plate previously subjected to electroless nickel plating was immersed for 20 minutes. As a result, palladium plating having a thickness of 0.2 μm was obtained.

【0023】比較例 めっき液の組成 塩化パラジウム 0.01モル/l エチレンジアミン 0.03モル/l チオジグリコール酸 20mg/l 次亜リン酸ナトリウム 0.06モル/l 上記のめっき液を塩酸及び水酸化ナトリウムによりpH
8.0に調整し、液温度50℃において、予め無電解ニ
ッケルめっきを施した銅板を24時間浸漬し、厚付けし
たパラジウムめっきの断面硬度を測定した結果、ビッカ
ース硬度で450Hvであった。また、大気中で300
℃、2時間加熱後の断面硬度もビッカース硬度700H
vに上昇した。上記実施例5と比較例から、本発明のめ
っき液から得られるパラジウム皮膜は加熱処理を行って
も、硬度の変化はなく、安定性に優れていることがわか
る。
Comparative Example Composition of plating solution Palladium chloride 0.01 mol / l Ethylenediamine 0.03 mol / l Thiodiglycolic acid 20 mg / l Sodium hypophosphite 0.06 mol / l The above plating solution was treated with hydrochloric acid and water. PH by sodium oxide
It was adjusted to 8.0, and at a liquid temperature of 50 ° C., a copper plate previously subjected to electroless nickel plating was immersed for 24 hours, and the cross-sectional hardness of the thick palladium plating was measured. As a result, the Vickers hardness was 450 Hv. In addition, 300
C. Vickers hardness 700H after heating for 2 hours
v. From the above Example 5 and Comparative Example, it can be seen that the hardness of the palladium film obtained from the plating solution of the present invention does not change even after heat treatment, and that the stability is excellent.

【0024】[0024]

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例4のめっき液を用いた場合の、めっき時
間と析出しためっき皮膜との関係を示す図。
FIG. 1 is a view showing a relationship between a plating time and a deposited plating film when a plating solution of Example 4 is used.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 (a)パラジウム化合物0.0001〜
0.5モル/l、 (b)アンモニア及びアミン化合物の少なくとも1種
0.0005〜8モル/l(c)ギ酸、ギ酸ナトリウム及びギ酸カリウムから選ば
れた 少なくとも1種0.005〜5モル/lを含んで成
ることを特徴とする無電解パラジウムめっき液。
(A) a palladium compound 0.0001 to
0.5 mol / l, (b) at least one of ammonia and an amine compound 0.0005 to 8 mol / l (c) selected from formic acid, sodium formate and potassium formate
Electroless palladium plating solution, characterized in that it comprises at least one 0.005 mol / l was.
【請求項2】(c)成分がクエン酸または酒石酸を含有
する請求項1記載の無電解パラジウムめっき液。
2. The component (c) contains citric acid or tartaric acid.
The electroless palladium plating solution according to claim 1.
JP5235871A 1993-08-30 1993-08-30 Electroless palladium plating solution Expired - Fee Related JP3035763B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5235871A JP3035763B2 (en) 1993-08-30 1993-08-30 Electroless palladium plating solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5235871A JP3035763B2 (en) 1993-08-30 1993-08-30 Electroless palladium plating solution

Publications (2)

Publication Number Publication Date
JPH0762549A JPH0762549A (en) 1995-03-07
JP3035763B2 true JP3035763B2 (en) 2000-04-24

Family

ID=16992486

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3035763B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010760A1 (en) * 2005-07-20 2007-01-25 Nippon Mining & Metals Co., Ltd. Plating solution for electroless palladium plating
JP5288362B2 (en) * 2007-01-17 2013-09-11 奥野製薬工業株式会社 Multilayer plating film and printed wiring board
KR100994579B1 (en) * 2007-02-28 2010-11-15 고지마 가가쿠 야쿠힌 가부시키가이샤 Electroless pure palladium plating solution
JP4117016B1 (en) 2007-08-15 2008-07-09 小島化学薬品株式会社 Electroless palladium plating solution
CN103898490B (en) * 2014-04-11 2017-03-22 深圳市荣伟业电子有限公司 High-reliability type chemical palladium plating liquor and cyanide-free chemical nickel-palladium-gold processing method
WO2016097083A2 (en) * 2014-12-17 2016-06-23 Atotech Deutschland Gmbh Plating bath composition and method for electroless plating of palladium
CN111712589B (en) 2018-02-20 2022-10-04 上村工业株式会社 Electroless palladium plating solution and palladium plating film

Also Published As

Publication number Publication date
JPH0762549A (en) 1995-03-07

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