CN101140305A - Inductance measurement method on radio frequency tablet capable of removing parasitic effect on test structure - Google Patents
Inductance measurement method on radio frequency tablet capable of removing parasitic effect on test structure Download PDFInfo
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- CN101140305A CN101140305A CNA2006100309650A CN200610030965A CN101140305A CN 101140305 A CN101140305 A CN 101140305A CN A2006100309650 A CNA2006100309650 A CN A2006100309650A CN 200610030965 A CN200610030965 A CN 200610030965A CN 101140305 A CN101140305 A CN 101140305A
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Abstract
The present invention discloses an inductance measuring method on a radio frequency film to eliminate parasitic effects of a testing structure, which can synchronously remove parasitic effects of a bonding pad and a down-lead in an inductance testing structure, thus realizing accurate inductance measuring. The method adds an access testing structure. In detail, a wire with a same width with a testing inductance down-lead is connected between two bonding pads connected with signals. After parasitic effects of the bonding pad are eliminated with an open structure for inductance measuring values, the method utilizes the open structure to remove parasitic effects of the down-lead, thus obtaining more accurate inductance measuring values.
Description
Technical Field
The invention relates to a method for measuring inductance on a radio frequency chip, in particular to a method for measuring inductance on a radio frequency chip, which can remove parasitic effect generated by an electric sensing test structure.
Background
In Radio Frequency (RF) on-chip inductance model extraction, it is necessary to test the S-parameters of the device at different frequencies. A special inductance test structure, PAD (PAD) and wire (Feed line) connecting PAD and inductance, is required to make the measurement feasible. Due to their parasitic effects, both have a certain influence on the accuracy of the inductance measurement. Therefore, when measuring inductance, a critical issue is how to remove the parasitic effect of the inductance test structure. For the case of low frequency, the parasitic effect of the lead can be ignored, so the measured value can be achieved by removing the parasitic effect of the bonding pad. At this time, the used inductance test structure of the PAD is called an open structure (open structure), namely, a hollow structure (dummy structure) only having the PAD but not having the inductance is needed, most of the inductance measurement on the radio frequency chip at present focuses on only using the open structure (open structure) to remove the parasitic effect of the PAD, and the method can basically remove the parallel parasitic capacitance of the PAD structure and the like, is simple and convenient, and is suitable for the application of lower frequency. However, as the frequency increases, the influence of the parasitic effect of the lead wire is increased, and thus the limitation of the inductance testing method of the OPEN structure is also shown.
Disclosure of Invention
The invention aims to solve the technical problem of providing a radio frequency on-chip inductance measuring method capable of removing parasitic effects on a test structure, which can simultaneously remove the parasitic effects generated by a bonding pad and a lead in an inductance test structure when the radio frequency on-chip inductance is measured, thereby realizing the aim of accurately measuring the on-chip inductance of the radio frequency.
In order to solve the technical problem, the method comprises the following steps:
(1) Introducing a path structure, namely connecting a connecting wire with the same width as a test electric induction lead between two bonding pads connected with signals;
(2) Calculating S parameter test value after the passage structure is opened to remove parasitic effect, and converting the S parameter into corresponding ABCD parameter A _deembopen ；
(3) Calculating characteristic impedance Z and a transmission constant gamma by using the S parameter obtained in the step (2);
(4) Respectively calculating ABCD parameters A of a left lead and a right lead in the test structure based on the characteristic parameters Z and gamma obtained in the step (3) _left And A _right ；
(5) Based on theABCD parameter A of left and right leads _left And A _right Calculating the ABCD parameter A of the inductance measurement on the radio frequency chip after the parasitic effect of the lead is removed _dut ；
(6) The ABCD parameter A of the inductance measurement on the radio frequency chip after the parasitic effect of the lead is removed is obtained by calculation _dut Converted into the corresponding S parameters.
By adopting the technical scheme, the invention has the following beneficial effects that on the basis of removing the parasitic effect brought by the PAD in an open-circuit structure measurement mode on the inductance measurement value, the parasitic effect brought by the lead wire is removed from the inductance measurement value by using a through structure measurement mode, so that the accurate inductance measurement value can be obtained.
Drawings
The invention is described in further detail below with reference to the following figures and embodiments:
the attached drawing is a measurement schematic diagram of the inductance test structure.
Detailed Description
Referring to the attached drawings, the test structure of the invention is shown in a test schematic diagram, and the method of the invention comprises the following steps:
(1) A new hollow structure-passage structure is introduced, namely a connecting line with the same width as the lead of the test inductor is connected between two PADs connected with signals.
(2) Calculating S parameter test value of the above path structure (through structure) after removing PAD parasitic effect (OpenDe-embedding) by using open structure, and converting the S parameter into corresponding ABCD parameter A _deembopen 。
The step is mainly used for removing the parasitic effect of the PAD, which is mainly expressed as parasitic capacitance, and the method for calculating the S parameter test value after the parasitic capacitance is removed comprises the following steps:
a. after the measurement structure is calibrated, the S parameter of the inductor on the radio frequency chip is directly measured and converted into the corresponding Y parameter Y _meas As is well known to those skilled in the art, the measured on-chip S parameter measurements include both PAD parasitics and wire parasitics;
b. measuring S parameter of PAD in open circuit structure (openstructure), converting it into corresponding Y parameter and Y _PAD Then using Y obtained in step a _meas Minus the Y _PAD The corresponding Y parameter of the inductor after removing the parasitic effect of PAD can be obtained, and the calculation formula is as follows:
Y _deembopen ＝Y _meas -Y _PAD
c. the calculated Y parameter Y _deembopen And then converted into its corresponding S parameter.
(3) And (3) calculating the characteristic impedance Z and the transmission constant gamma by using the S parameter measured in the step (2).
Wherein, the calculation formula of the transmission constant gamma is as follows:
wherein the content of the first and second substances,
the calculation formula of the characteristic impedance Z is as follows:
(4) Respectively calculating the ABCD parameters A of the left and right leads with different lengths in the test structure based on the characteristic parameters Z and gamma obtained in the step (3) _left And A _right Wherein A is _left ABCD parameter of left lead in finger test structure，A _right Refers to the ABCD parameter of the right lead in the test structure.
The calculation formula of the ABCD parameter is as follows:
wherein L is the lead length
(5) Since the inductor is cascaded with the two leads, the ABCD parameter A of the left lead and the right lead can be based on _left And A _right Calculating the ABCD parameter A of the electrical sensing quantity on the radio frequency chip after removing the parasitic effect of the lead _dut 。
The calculation formula is as follows:
A _dut ＝(A _left ) -1 *A _deembopen *(A _right ) -1
(6) The ABCD parameter A of the inductance measurement on the radio frequency chip after the parasitic effect of the lead is removed is obtained through calculation _dut Converted into the corresponding S parameter.
The accurate measurement value of the intrinsic inductance on the radio frequency chip can be measured through the process.
Claims (4)
1. A radio frequency on-chip inductance measurement method capable of removing parasitic effects on a test structure is characterized by comprising the following steps:
(1) Introducing a path structure, namely connecting a connecting wire with the same width as a test electric induction lead between two bonding pads connected with signals;
(2) Calculating S parameter test value of the path structure after removing parasitic effect of the bonding pad by using an open circuit structure, and converting the S parameter into corresponding ABCD parameter A _deembopen ；
(3) Calculating characteristic impedance Z and a transmission constant gamma by using the S parameter obtained in the step (2);
(4) Based on the characteristic parameters Z and gamma obtained in the step (3)Respectively calculating ABCD parameters A of the left and right leads in the test structure _left And A _right ；
(5) ABCD parameter A based on the left and right leads _left And A _right Calculating the ABCD parameter A of the inductance measurement on the radio frequency chip after the parasitic effect of the lead is removed _dut ；
(6) The ABCD parameter A of the inductance measurement on the radio frequency chip after the parasitic effect of the lead is removed is obtained through calculation _dut Converted into the corresponding S parameter.
2. The method for RF on-chip sensing of parasitics on a test structure according to claim 1, wherein the transmission constant γ is calculated by the formula:
wherein the content of the first and second substances,
3. the method of claim 1, wherein the characteristic impedance Z is calculated by the following formula:
4. the method of claim 1, wherein the step of removing parasitic effect on the test structure comprises measuring ABCD parameter A of the inductance measurement on the RF chip after removing parasitic effect on the lead wire _dut The calculation formula of (c) is:
A _dut ＝(A _left ) -1 *A _deembopen *(A _ritht ) -1 。
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100309650A CN100552460C (en) | 2006-09-08 | 2006-09-08 | Can remove inductance measurement method on the radio frequency tablet of ghost effect on the test structure |
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| CNB2006100309650A CN100552460C (en) | 2006-09-08 | 2006-09-08 | Can remove inductance measurement method on the radio frequency tablet of ghost effect on the test structure |
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| CN101140305A true CN101140305A (en) | 2008-03-12 |
| CN100552460C CN100552460C (en) | 2009-10-21 |
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Cited By (9)
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| CN102147434A (en) * | 2010-02-09 | 2011-08-10 | 中芯国际集成电路制造(上海)有限公司 | Method for testing inductance |
| CN102243275A (en) * | 2011-04-25 | 2011-11-16 | 上海宏力半导体制造有限公司 | Measuring method for parasitic capacitance in capacitance DC (direct current) model |
| CN102375101A (en) * | 2010-08-19 | 2012-03-14 | 上海华虹Nec电子有限公司 | Passive device test de-embedding method by adopting different layers of metal lead to connect out |
| CN102478620A (en) * | 2010-11-25 | 2012-05-30 | 上海华虹Nec电子有限公司 | Method for characterizing radio frequency isolation in radio frequency process |
| CN101839947B (en) * | 2010-05-13 | 2012-06-27 | 安徽铜峰电子股份有限公司 | Measurement method of parasitic inductance of capacitor |
| CN106405288A (en) * | 2016-08-31 | 2017-02-15 | 北京航空航天大学 | Method for obtaining electromagnetic transmission matrix of linear impedance stabilization network |
| CN106646193A (en) * | 2016-12-15 | 2017-05-10 | 重庆西南集成电路设计有限责任公司 | Bonding wire parasitic parameter testing and extracting method |
| CN107076822A (en) * | 2014-10-28 | 2017-08-18 | 上海集成电路研发中心有限公司 | The test structure and method of radio-frequency devices De- embedding precision are judged using introduction means |
| WO2021031424A1 (en) * | 2019-08-19 | 2021-02-25 | 苏州华太电子技术有限公司 | Scattering parameter measurement method and device calibration method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102147434A (en) * | 2010-02-09 | 2011-08-10 | 中芯国际集成电路制造(上海)有限公司 | Method for testing inductance |
| CN102147434B (en) * | 2010-02-09 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method for testing inductance |
| CN101839947B (en) * | 2010-05-13 | 2012-06-27 | 安徽铜峰电子股份有限公司 | Measurement method of parasitic inductance of capacitor |
| CN102375101B (en) * | 2010-08-19 | 2013-12-18 | 上海华虹Nec电子有限公司 | Passive device test de-embedding method by adopting different layers of metal lead to connect out |
| CN102375101A (en) * | 2010-08-19 | 2012-03-14 | 上海华虹Nec电子有限公司 | Passive device test de-embedding method by adopting different layers of metal lead to connect out |
| CN102478620A (en) * | 2010-11-25 | 2012-05-30 | 上海华虹Nec电子有限公司 | Method for characterizing radio frequency isolation in radio frequency process |
| CN102478620B (en) * | 2010-11-25 | 2013-09-11 | 上海华虹Nec电子有限公司 | Method for characterizing radio frequency isolation in radio frequency process |
| CN102243275B (en) * | 2011-04-25 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | Measuring method for parasitic capacitance in capacitance DC (direct current) model |
| CN102243275A (en) * | 2011-04-25 | 2011-11-16 | 上海宏力半导体制造有限公司 | Measuring method for parasitic capacitance in capacitance DC (direct current) model |
| CN107076822A (en) * | 2014-10-28 | 2017-08-18 | 上海集成电路研发中心有限公司 | The test structure and method of radio-frequency devices De- embedding precision are judged using introduction means |
| CN107076822B (en) * | 2014-10-28 | 2020-01-10 | 上海集成电路研发中心有限公司 | Test structure and method for judging de-embedding precision of radio frequency device by using lead-in device |
| CN106405288A (en) * | 2016-08-31 | 2017-02-15 | 北京航空航天大学 | Method for obtaining electromagnetic transmission matrix of linear impedance stabilization network |
| CN106405288B (en) * | 2016-08-31 | 2019-01-01 | 北京航空航天大学 | A method of obtaining linear impedance stabilization network electromagnetic transmission matrix |
| CN106646193A (en) * | 2016-12-15 | 2017-05-10 | 重庆西南集成电路设计有限责任公司 | Bonding wire parasitic parameter testing and extracting method |
| CN106646193B (en) * | 2016-12-15 | 2019-03-22 | 重庆西南集成电路设计有限责任公司 | Bonding line S parameter Test extraction method |
| WO2021031424A1 (en) * | 2019-08-19 | 2021-02-25 | 苏州华太电子技术有限公司 | Scattering parameter measurement method and device calibration method |
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| CN100552460C (en) | 2009-10-21 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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