CN113985244B - De-embedding method and system based on transmission line piece and open circuit piece - Google Patents

De-embedding method and system based on transmission line piece and open circuit piece Download PDF

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CN113985244B
CN113985244B CN202111166274.4A CN202111166274A CN113985244B CN 113985244 B CN113985244 B CN 113985244B CN 202111166274 A CN202111166274 A CN 202111166274A CN 113985244 B CN113985244 B CN 113985244B
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transmission line
parameter
embedding
piece
impedance
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CN113985244A (en
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张永明
蔡文必
林义书
魏鸿基
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Xiamen Sanan Integrated Circuit Co Ltd
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Xiamen Sanan Integrated Circuit Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The invention discloses a method and a system for de-embedding based on a transmission line piece and an open circuit piece, comprising the following steps: s scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece are respectively obtained; s scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece are respectively converted into Y admittance parameters; subtracting the Y admittance parameter of the open circuit part from the Y admittance parameter of the part to be measured, and converting the Y admittance parameter of the part to be measured into a Z impedance parameter of the part to be measured after de-embedding; subtracting the Y admittance parameter of the open circuit component from the Y admittance parameter of the transmission line component, and then converting the Y admittance parameter of the transmission line component into a Z impedance parameter of the transmission line component after de-embedding; calculating a transmission line impedance parameter in the transmission line member; removing the Z impedance parameter of the transmission line piece after de-embedding to obtain the Z impedance parameter for de-embedding; and removing the Z impedance parameter of the to-be-detected piece after de-embedding by buckling the Z impedance parameter for embedding, and converting the Z impedance parameter after de-embedding into the S scattering parameter after de-embedding. The invention can improve the de-embedding effect of the on-chip test and accurately deduct the parasitic effect caused by the bonding pad.

Description

De-embedding method and system based on transmission line piece and open circuit piece
Technical Field
The present invention relates to the field of semiconductor integrated circuit measurement, and in particular, to a method and system for de-embedding based on transmission line and open circuit components.
Background
In the radio frequency microwave small signal test, accurately obtaining the S parameter data of the to-be-tested piece is very important for the performance verification or modeling of the to-be-tested piece. The more common method for moving the test reference end surface is as follows: the test reference end face is moved to the tip of the probe through the calibration function of the vector network analyzer, and then the test reference end face is moved from the tip to the end face of the device through a de-embedding mode. When the device is embedded, S scattering parameter data of the device can be measured and extracted only by accurate and reasonable end faces, and parasitic effects such as wiring and the like can be added to the result or the original small signal characteristics of the device can be deducted from the position of the unreasonable end faces. The current common de-embedding technology is to de-embed the open-circuit calibration piece and the short-circuit calibration piece. In the current common de-embedding method, there is a risk of embedding in the past, and the sense value of the grounding wire or the through hole of the short-circuit element has a larger influence on the de-embedding result. The chinese patent (a small signal measuring de-embedding method, application No. 201710407774. X) proposes a small signal measuring de-embedding method, in which a through de-embedding element is used to replace a short-circuit de-embedding element, and the measured result of the through de-embedding element is used to extract the equivalent short-circuit characteristic representing the resistance characteristic through an algorithm.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a de-embedding method and a system based on a transmission line piece and an open circuit piece, wherein Z impedance parameters for de-embedding are obtained by removing Z impedance parameters of the transmission line piece after de-embedding, so that the de-embedding effect of on-chip testing can be improved, and parasitic effects caused by a bonding pad can be accurately deducted; meanwhile, the inductance effect caused by the grounding wiring and the through hole can be avoided.
The technical scheme adopted for solving the technical problems is as follows:
in one aspect, a method for de-embedding based on a transmission line component and an open circuit component includes:
s scattering parameters of the to-be-measured piece, the transmission line piece and the open circuit piece are respectively obtained through measurement;
s scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece are respectively converted into Y admittance parameters;
subtracting the Y admittance parameter of the open circuit part from the Y admittance parameter of the part to be measured to obtain the Y admittance parameter of the part to be measured after de-embedding; converting the Y admittance parameter of the to-be-measured piece after de-embedding into the Z impedance parameter of the to-be-measured piece after de-embedding;
subtracting the Y admittance parameter of the open circuit part from the Y admittance parameter of the transmission line part to obtain a de-embedded transmission line part Y admittance parameter; converting the de-embedded Y admittance parameter of the to-be-detected piece into a de-embedded Z impedance parameter of the transmission line piece;
calculating a transmission line impedance parameter in the transmission line member;
removing the Z impedance parameter of the transmission line piece after de-embedding to obtain the Z impedance parameter for de-embedding;
removing Z impedance parameters for embedding from the Z impedance parameters of the to-be-detected piece after the embedding is removed, and obtaining Z impedance parameters after the embedding is removed; and converting the Z impedance parameter after de-embedding into an S scattering parameter to obtain the S scattering parameter after de-embedding.
Preferably, the DUT includes a DUT, a signal input pad S1, a signal output pad S2, a first ground pad G1, a second ground pad G2, a third ground pad G3, and a fourth ground pad G4, where the signal input pad S1 is connected to an input end of the DUT through a first transmission line M1, and the signal output pad S2 is connected to an output end of the DUT through a second transmission line M2; the open circuit part is used for removing the DUT, the first transmission line M1 and the second transmission line M2 on the basis of the DUT; the transmission line piece is formed by removing the DUT (device under test) on the basis of the DUT, and connecting the first transmission line M1 and the second transmission line M2 into a transmission line M.
Preferably, the Y admittance parameter of the to-be-measured piece is subtracted from the Y admittance parameter of the open circuit piece to obtain the de-embedded Y admittance parameter of the to-be-measured piece, which specifically comprises:
y admittance parameter Y of the piece to be measured DUT Y admittance parameter Y with open circuit member open Performing difference to obtain the admittance parameter Y of the to-be-detected piece after de-embedding DE_DUT The following are provided:
Y DE_DUT =Y DUT -Y open
preferably, the Y admittance parameter of the transmission line member is subtracted from the Y admittance parameter of the open circuit member to obtain the de-embedded transmission line member Y admittance parameter, which specifically includes:
y admittance parameter Y of transmission line member TR Y admittance parameter Y with open circuit member open Performing difference to obtain the transmission line Y admittance parameter Y after de-embedding DE_TR The following are provided:
Y DE_TR =Y TR -Y open
preferably, the transmission line impedance parameter is expressed as follows:
Zline=R+jwL
wherein Zline represents the impedance of the transmission line; r represents the resistance of the transmission line; l represents the inductance of the transmission line.
Preferably, the resistance R of the transmission line is represented as follows:
Figure BDA0003291396680000021
when w/h is less than or equal to 1, the inductance value L of the transmission line is expressed as follows:
Figure BDA0003291396680000031
when w/h >1, the inductance L of the transmission line is expressed as follows:
Figure BDA0003291396680000032
wherein w represents the line width of the transmission line; h represents the substrate thickness, l represents the transmission line length, ln () refers to the natural logarithm; v0 refers to the speed of light in vacuum; ρ represents the resistivity of the transmission line metal; t represents the thickness of the transmission line metal.
Preferably, the matrix of Z impedance parameters for de-embedding is represented as follows:
Figure BDA0003291396680000033
wherein Zsh1 =0.5- (Zsh (1, 1) + Zsh (2, 2)) Zsh (1, 2) -Zsh (2, 1) -Zline, the transmission line Z impedance parameter after de-embedding is a two-dimensional matrix for a two-port network, zsh (1, 1) represents a value of a first row and a first column of the two-dimensional matrix, zsh (2, 2) represents a value of a second row and a second column of the two-dimensional matrix, zsh (1, 2) represents a value of a first row and a second column of the two-dimensional matrix, zsh (2, 1) represents a value of a first row and a first column of the two-dimensional matrix, and Zsh2 =0.
Preferably, the Z impedance parameter of the to-be-measured piece after de-embedding is buckled to remove the Z impedance parameter for embedding, so as to obtain the Z impedance parameter after de-embedding, which specifically comprises:
z impedance parameter Z of to-be-measured piece after de-embedding DE_DUT Z impedance parameter Z for de-embedding DE_LINE Performing difference to obtain Z impedance parameter Y after de-embedding DE_RESULT The following are provided:
Y DE_RESULT =Z DE_DUT -Z DE_LINE
in another aspect, a transmission line component and open circuit component based de-embedding system includes:
the S scattering parameter acquisition module is used for respectively acquiring S scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece through measurement;
the Y admittance parameter acquisition module is used for respectively converting the S scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece into Y admittance parameters;
the Z impedance parameter acquisition module of the to-be-detected piece after de-embedding is used for deducting the Y admittance parameter of the open circuit piece from the Y admittance parameter of the to-be-detected piece to obtain the Y admittance parameter of the to-be-detected piece after de-embedding; converting the Y admittance parameter of the to-be-measured piece after de-embedding into the Z impedance parameter of the to-be-measured piece after de-embedding;
the transmission line piece Z impedance parameter acquisition module is used for deducting the Y admittance parameter of the transmission line piece from the Y admittance parameter of the open circuit piece to obtain the Y admittance parameter of the transmission line piece after de-embedding; converting the de-embedded Y admittance parameter of the to-be-detected piece into a de-embedded Z impedance parameter of the transmission line piece;
the transmission line impedance parameter acquisition module is used for calculating the transmission line impedance parameters in the transmission line part;
the Z impedance parameter acquisition module is used for removing the Z impedance parameter of the transmission line piece after the de-embedding to obtain the Z impedance parameter for the de-embedding;
the S scattering parameter acquisition module after de-embedding is used for removing the Z impedance parameter for embedding from the Z impedance parameter buckle of the to-be-detected piece after de-embedding to obtain the Z impedance parameter after de-embedding; and converting the Z impedance parameter after de-embedding into an S scattering parameter to obtain the S scattering parameter after de-embedding.
Preferably, the DUT includes a DUT, a signal input pad S1, a signal output pad S2, a first ground pad G1, a second ground pad G2, a third ground pad G3, and a fourth ground pad G4, where the signal input pad S1 is connected to an input end of the DUT through a first transmission line M1, and the signal output pad S2 is connected to an output end of the DUT through a second transmission line M2; the open circuit part is used for removing the DUT, the first transmission line M1 and the second transmission line M2 on the basis of the DUT; the transmission line piece is formed by removing the DUT (device under test) on the basis of the DUT, and connecting the first transmission line M1 and the second transmission line M2 into a transmission line M.
The invention has the following beneficial effects:
the invention relates to a de-embedding method and a system based on a transmission line piece and an open circuit piece, wherein Z impedance parameters of the de-embedded transmission line piece are removed to obtain Z impedance parameters for de-embedding, and then Z impedance parameters of the de-embedded piece to be detected are converted into S scattering parameters after the Z impedance parameters for embedding are removed, so that S scattering parameters after de-embedding are obtained, the de-embedding effect of on-chip testing can be improved, and parasitic effects caused by a bonding pad can be accurately deducted; meanwhile, the inductance effect caused by the grounding wiring and the through hole can be avoided.
The present invention will be described in further detail with reference to the drawings and examples, but the present invention is not limited to the examples.
Drawings
FIG. 1 is a flow chart of the method of the present invention;
FIG. 2 is a schematic diagram of a structure of a part to be tested according to the present invention;
FIG. 3 is a schematic view of an open circuit member according to the present invention;
FIG. 4 is a schematic diagram of a transmission line member according to the present invention;
FIG. 5 is a diagram of a structure of a part to be tested with bonding pads according to an embodiment of the present invention;
FIG. 6 is a graph comparing the results of de-embedding based on the part to be tested of FIG. 5;
fig. 7 is a block diagram of the system of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments of the present invention without making any inventive effort, are intended to be within the scope of the embodiments of the present invention.
Referring to fig. 1, a method for de-embedding based on a transmission line member and an open circuit member includes:
s101, respectively obtaining S scattering parameters of a piece to be detected, a transmission line piece and an open circuit piece by measurement;
s102, respectively converting S scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece into Y admittance parameters;
s103, subtracting the Y admittance parameter of the open circuit part from the Y admittance parameter of the part to be measured to obtain the Y admittance parameter of the part to be measured after de-embedding; converting the Y admittance parameter of the to-be-measured piece after de-embedding into the Z impedance parameter of the to-be-measured piece after de-embedding;
s104, subtracting the Y admittance parameter of the open circuit part from the Y admittance parameter of the transmission line part to obtain the Y admittance parameter of the transmission line part after de-embedding; converting the de-embedded Y admittance parameter of the to-be-detected piece into a de-embedded Z impedance parameter of the transmission line piece;
s105, calculating a transmission line impedance parameter in the transmission line part;
s106, removing the Z impedance parameter of the transmission line piece after de-embedding to obtain the Z impedance parameter for de-embedding;
s107, removing the Z impedance parameter of the to-be-detected piece after de-embedding by buckling to obtain the Z impedance parameter after de-embedding; and converting the Z impedance parameter after de-embedding into an S scattering parameter to obtain the S scattering parameter after de-embedding.
Specifically, referring to fig. 2 to 4, the to-be-tested piece includes a to-be-tested piece DUT, a signal input pad S1, a signal output pad S2, a first ground pad G1, a second ground pad G2, a third ground pad G3, and a fourth ground pad G4, where the signal input pad S1 is connected with an input end of the to-be-tested piece DUT through a first transmission line M1, and the signal output pad S2 is connected with an output end of the to-be-tested piece DUT through a second transmission line M2; the open circuit part is used for removing the DUT, the first transmission line M1 and the second transmission line M2 on the basis of the DUT; the transmission line piece is formed by removing the DUT (device under test) on the basis of the DUT, and connecting the first transmission line M1 and the second transmission line M2 into a transmission line M.
In S101, after the measurement is completed, the data format generated by the vector network analyzer in the RF measurement system is the S parameter.
In S102, the method of converting the S scattering parameters of the to-be-measured element, the transmission line element and the open circuit element into the Y admittance parameters is the existing method. Such as two-port S parameter matrix
Figure BDA0003291396680000051
Conversion into a two-port Y parameter matrix>
Figure BDA0003291396680000052
The formula of (2) is as follows:
Figure BDA0003291396680000053
Figure BDA0003291396680000061
Figure BDA0003291396680000062
Figure BDA0003291396680000063
in S103, subtracting the Y admittance parameter of the open circuit member from the Y admittance parameter of the member to be measured to obtain the de-embedded Y admittance parameter of the member to be measured, which specifically includes:
y admittance parameter Y of the piece to be measured DUT Y admittance parameter Y with open circuit member open Difference is made to obtain de-embeddingAfter the test piece Y admittance parameter Y DE_DUT The following are provided:
Y DE_DUT =Y DUT -Y open
it can be understood that, with the conversion from the S scattering parameter to the Y admittance parameter in S102, the conversion from the Y admittance parameter to the Z impedance parameter in this embodiment also adopts the basic algorithm of the two-port network in the radio frequency engineering, and this embodiment will not be described in detail.
In S104, subtracting the Y admittance parameter of the open circuit component from the Y admittance parameter of the transmission line component to obtain the de-embedded transmission line component Y admittance parameter, which specifically includes:
y admittance parameter Y of transmission line member TR Y admittance parameter Y with open circuit member open Performing difference to obtain the transmission line Y admittance parameter Y after de-embedding DE_TR The following are provided:
Y DE_TR =Y TR -Y open
in S105, the transmission line impedance parameters are expressed as follows:
Zline=R+jwL
wherein Zline represents the impedance of the transmission line; r represents the resistance of the transmission line; l represents the inductance of the transmission line.
Specifically, the resistance R of the transmission line is represented as follows:
Figure BDA0003291396680000064
further, when w/h.ltoreq.1, the inductance L of the transmission line is expressed as follows:
Figure BDA0003291396680000065
when w/h >1, the inductance L of the transmission line is expressed as follows:
Figure BDA0003291396680000066
wherein w represents the line width of the transmission line; h represents the substrate thickness, l represents the transmission line length, ln () refers to the natural logarithm; v0 refers to the speed of light in vacuum; ρ represents the resistivity of the transmission line metal; t represents the thickness of the transmission line metal.
In S106, the Z impedance parameter of the transmission line after the de-embedding is removed from the Z impedance parameter of the transmission line, so as to obtain the Z impedance parameter for the de-embedding. In this embodiment, the matrix Z of Z impedance parameters for de-embedding DE_LINE The expression is as follows:
Figure BDA0003291396680000071
wherein Zsh1 =0.5- (Zsh (1, 1) + Zsh (2, 2)) Zsh (1, 2) -Zsh (2, 1) -Zline, the transmission line Z impedance parameter after de-embedding is a two-dimensional matrix for a two-port network, zsh (1, 1) represents a value of a first row and a first column of the two-dimensional matrix, zsh (2, 2) represents a value of a second row and a second column of the two-dimensional matrix, zsh (1, 2) represents a value of a first row and a second column of the two-dimensional matrix, zsh (2, 1) represents a value of a first row and a first column of the two-dimensional matrix, and Zsh2 =0.
In S107, the step of removing the Z impedance parameter for embedding from the Z impedance parameter of the to-be-detected piece after the embedding to obtain the Z impedance parameter after the embedding specifically includes:
z impedance parameter Z of to-be-measured piece after de-embedding DE_DUT Z impedance parameter Z for de-embedding DE_LINE Performing difference to obtain Z impedance parameter Y after de-embedding DE_RESULT The following are provided:
Y DE_RESULT =Z DE_DUT -Z DE_LINE
it can be understood that in the step S107, the conversion from the Z impedance parameter after de-embedding to the S scattering parameter is also performed by the basic algorithm of the two-port network in the radio frequency engineering, which is the same as the conversion from the S scattering parameter to the Y admittance parameter in the step S102, and the detailed description of this embodiment is omitted.
Referring to fig. 5 and 6, a comparison is made between a capacitance/frequency trend graph obtained by the transmission line component and the open circuit component based de-embedding method, a capacitance/frequency trend graph obtained by the conventional de-embedding method, and a capacitance/frequency trend graph actually measured. As can be seen from fig. 6, the capacitance/frequency trend obtained by the transmission line element and open circuit element based de-embedding method of the present invention is consistent with the capacitance/frequency trend measured actually. Therefore, the invention can improve the de-embedding effect and deduct the parasitic bonding pad effect more accurately; meanwhile, the inductance effect caused by the grounding wiring and the through hole can be avoided.
Referring to fig. 7, a transmission line and open circuit based de-embedding system, comprising:
the S scattering parameter obtaining module 701 is configured to obtain S scattering parameters of the to-be-detected piece, the transmission line piece, and the open circuit piece respectively by measurement;
the Y admittance parameter obtaining module 702 is configured to convert S scattering parameters of the to-be-tested piece, the transmission line piece, and the open circuit piece into Y admittance parameters, respectively;
the de-embedded Z-impedance parameter obtaining module 703 is configured to subtract the Y-admittance parameter of the to-be-detected element from the Y-admittance parameter of the open circuit element to obtain a de-embedded Y-admittance parameter of the to-be-detected element; converting the Y admittance parameter of the to-be-measured piece after de-embedding into the Z impedance parameter of the to-be-measured piece after de-embedding;
the de-embedded transmission line piece Z impedance parameter obtaining module 704 is configured to subtract the Y admittance parameter of the open circuit piece from the Y admittance parameter of the transmission line piece to obtain a de-embedded transmission line piece Y admittance parameter; converting the de-embedded Y admittance parameter of the to-be-detected piece into a de-embedded Z impedance parameter of the transmission line piece;
a transmission line impedance parameter obtaining module 705, configured to calculate a transmission line impedance parameter in a transmission line member;
a Z impedance parameter obtaining module 706 for removing the Z impedance parameter of the transmission line piece after the de-embedding to obtain the Z impedance parameter for the de-embedding;
the de-embedded S scattering parameter obtaining module 707 is configured to remove the Z impedance parameter for embedding from the Z impedance parameter buckle of the de-embedded to obtain a de-embedded Z impedance parameter; and converting the Z impedance parameter after de-embedding into an S scattering parameter to obtain the S scattering parameter after de-embedding.
In this embodiment, the DUT includes a DUT, a signal input pad S1, a signal output pad S2, a first ground pad G1, a second ground pad G2, a third ground pad G3, and a fourth ground pad G4, where the signal input pad S1 is connected to an input end of the DUT through a first transmission line M1, and the signal output pad S2 is connected to an output end of the DUT through a second transmission line M2; the open circuit part is used for removing the DUT, the first transmission line M1 and the second transmission line M2 on the basis of the DUT; the transmission line piece is formed by removing the DUT (device under test) on the basis of the DUT, and connecting the first transmission line M1 and the second transmission line M2 into a transmission line M.
The foregoing is merely illustrative of specific embodiments of the present invention, but the design concept of the present invention is not limited thereto, and any insubstantial modification of the present invention by using the design concept shall fall within the scope of the present invention.
The foregoing is merely a preferred embodiment of the invention, and it should be noted that modifications could be made by those skilled in the art without departing from the principles of the invention, which modifications would also be considered to be within the scope of the invention.

Claims (7)

1. A transmission line element and open circuit element based de-embedding method, comprising:
s scattering parameters of the to-be-measured piece, the transmission line piece and the open circuit piece are respectively obtained through measurement;
s scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece are respectively converted into Y admittance parameters;
subtracting the Y admittance parameter of the open circuit part from the Y admittance parameter of the part to be measured to obtain the Y admittance parameter of the part to be measured after de-embedding; converting the Y admittance parameter of the to-be-measured piece after de-embedding into the Z impedance parameter of the to-be-measured piece after de-embedding;
subtracting the Y admittance parameter of the open circuit part from the Y admittance parameter of the transmission line part to obtain a de-embedded transmission line part Y admittance parameter; converting the de-embedded Y admittance parameter of the to-be-detected piece into a de-embedded Z impedance parameter of the transmission line piece;
calculating a transmission line impedance parameter in the transmission line member;
removing the Z impedance parameter of the transmission line piece after de-embedding to obtain the Z impedance parameter for de-embedding;
removing Z impedance parameters for embedding from the Z impedance parameters of the to-be-detected piece after the embedding is removed, and obtaining Z impedance parameters after the embedding is removed; converting the Z impedance parameter after de-embedding into an S scattering parameter to obtain the S scattering parameter after de-embedding;
the device under test comprises a device under test DUT, a signal input pad S1, a signal output pad S2, a first grounding pad G1, a second grounding pad G2, a third grounding pad G3 and a fourth grounding pad G4, wherein the signal input pad S1 is connected with the input end of the device under test DUT through a first transmission line M1, and the signal output pad S2 is connected with the output end of the device under test DUT through a second transmission line M2; the open circuit part is used for removing the DUT, the first transmission line M1 and the second transmission line M2 on the basis of the DUT; the transmission line piece is formed by removing the DUT (device under test) on the basis of the DUT, and connecting the first transmission line M1 and the second transmission line M2 into a transmission line M;
the matrix of Z impedance parameters for de-embedding is represented as follows:
Figure FDA0004154027720000011
wherein Zsh1 =0.5- (Zsh (1, 1) + Zsh (2, 2)) Zsh (1, 2) -Zsh (2, 1) -Zline, the transmission line Z impedance parameter after de-embedding being a two-dimensional matrix for a two-port network, zsh (1, 1) representing the value of the first row and the first column of the two-dimensional matrix, zsh (2, 2) representing the value of the second row and the second column of the two-dimensional matrix, zsh (1, 2) representing the value of the first row and the second column of the two-dimensional matrix, zsh (2, 1) representing the value of the first row and the first column of the two-dimensional matrix, zsh2 =0 Zline representing the transmission line impedance parameter.
2. The method for de-embedding a workpiece according to claim 1, wherein the method for de-embedding the workpiece comprises subtracting the Y admittance parameter of the workpiece from the Y admittance parameter of the workpiece, and comprises:
y admittance parameter Y of the piece to be measured DUT Y admittance parameter Y with open circuit member open Performing difference to obtain the admittance parameter Y of the to-be-detected piece after de-embedding DE_DUT The following are provided:
Y DE_DUT =Y DUT -Y open
3. the method for de-embedding a transmission line element and an open circuit element according to claim 1, wherein the method comprises subtracting the Y admittance parameter of the open circuit element from the Y admittance parameter of the transmission line element to obtain the de-embedded transmission line element Y admittance parameter, and specifically comprises:
y admittance parameter Y of transmission line member TR Y admittance parameter Y with open circuit member open Performing difference to obtain the transmission line Y admittance parameter Y after de-embedding DE_TR The following are provided:
Y DE_TR =Y TR -Y open
4. the transmission line element and open circuit element based de-embedding method according to claim 1, wherein the transmission line impedance parameters are expressed as follows:
Zline=R+jwL
wherein Zline represents the impedance of the transmission line; r represents the resistance of the transmission line; l represents the inductance of the transmission line.
5. The method for de-embedding a transmission line and an open circuit device according to claim 4, wherein the resistance R of the transmission line is represented as follows:
Figure FDA0004154027720000021
when w/h is less than or equal to 1, the inductance value L of the transmission line is expressed as follows:
Figure FDA0004154027720000022
when w/h >1, the inductance L of the transmission line is expressed as follows:
Figure FDA0004154027720000023
wherein w represents the line width of the transmission line; h represents the substrate thickness, l represents the transmission line length, ln () refers to the natural logarithm; v0 refers to the speed of light in vacuum; ρ represents the resistivity of the transmission line metal; t represents the thickness of the transmission line metal.
6. The method for removing an embedded component based on a transmission line component and an open circuit component according to claim 1, wherein removing the embedded Z impedance parameter of the Z impedance parameter buckle of the to-be-detected component after the embedding to obtain the Z impedance parameter after the embedding specifically comprises:
z impedance parameter Z of to-be-measured piece after de-embedding DE_DUT Z impedance parameter Z for de-embedding DE_LINE Performing difference to obtain Z impedance parameter Y after de-embedding DE_RESULT The following are provided:
Y DE _ RESULT =Z DE _ DUT -Z DE _ LINE
7. a transmission line and open circuit based de-embedding system, comprising:
the S scattering parameter acquisition module is used for respectively acquiring S scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece through measurement;
the Y admittance parameter acquisition module is used for respectively converting the S scattering parameters of the to-be-detected piece, the transmission line piece and the open circuit piece into Y admittance parameters;
the Z impedance parameter acquisition module of the to-be-detected piece after de-embedding is used for deducting the Y admittance parameter of the open circuit piece from the Y admittance parameter of the to-be-detected piece to obtain the Y admittance parameter of the to-be-detected piece after de-embedding; converting the Y admittance parameter of the to-be-measured piece after de-embedding into the Z impedance parameter of the to-be-measured piece after de-embedding;
the transmission line piece Z impedance parameter acquisition module is used for deducting the Y admittance parameter of the transmission line piece from the Y admittance parameter of the open circuit piece to obtain the Y admittance parameter of the transmission line piece after de-embedding; converting the de-embedded Y admittance parameter of the to-be-detected piece into a de-embedded Z impedance parameter of the transmission line piece;
the transmission line impedance parameter acquisition module is used for calculating the transmission line impedance parameters in the transmission line part;
the Z impedance parameter acquisition module is used for removing the Z impedance parameter of the transmission line piece after the de-embedding to obtain the Z impedance parameter for the de-embedding;
the S scattering parameter acquisition module after de-embedding is used for removing the Z impedance parameter for embedding from the Z impedance parameter buckle of the to-be-detected piece after de-embedding to obtain the Z impedance parameter after de-embedding; converting the Z impedance parameter after de-embedding into an S scattering parameter to obtain the S scattering parameter after de-embedding;
the device under test comprises a device under test DUT, a signal input pad S1, a signal output pad S2, a first grounding pad G1, a second grounding pad G2, a third grounding pad G3 and a fourth grounding pad G4, wherein the signal input pad S1 is connected with the input end of the device under test DUT through a first transmission line M1, and the signal output pad S2 is connected with the output end of the device under test DUT through a second transmission line M2; the open circuit part is used for removing the DUT, the first transmission line M1 and the second transmission line M2 on the basis of the DUT; the transmission line piece is formed by removing the DUT (device under test) on the basis of the DUT, and connecting the first transmission line M1 and the second transmission line M2 into a transmission line M;
the matrix of Z impedance parameters for de-embedding is represented as follows:
Figure FDA0004154027720000031
wherein Zsh1 =0.5- (Zsh (1, 1) + Zsh (2, 2)) Zsh (1, 2) -Zsh (2, 1) -Zline, the transmission line Z impedance parameter after de-embedding being a two-dimensional matrix for a two-port network, zsh (1, 1) representing the value of the first row and the first column of the two-dimensional matrix, zsh (2, 2) representing the value of the second row and the second column of the two-dimensional matrix, zsh (1, 2) representing the value of the first row and the second column of the two-dimensional matrix, zsh (2, 1) representing the value of the first row and the first column of the two-dimensional matrix, zsh2 =0 Zline representing the transmission line impedance parameter.
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