CN101114598A - 具有粗糙润湿和非润湿区的电子封装 - Google Patents

具有粗糙润湿和非润湿区的电子封装 Download PDF

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CN101114598A
CN101114598A CNA200710136747XA CN200710136747A CN101114598A CN 101114598 A CN101114598 A CN 101114598A CN A200710136747X A CNA200710136747X A CN A200710136747XA CN 200710136747 A CN200710136747 A CN 200710136747A CN 101114598 A CN101114598 A CN 101114598A
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projection
tube core
substrate
encapsulation according
hydrophilic
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N·查克拉帕尼
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Intel Corp
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Abstract

可以通过改变封装表面的粗糙度和表面化学性质来控制聚合物成分在集成电路封装中的流动。可以通过形成尺寸小于500纳米的突起来改变表面粗糙度，并且可以通过化学或等离子体处理来控制它们的化学性质。通过具有相同通性的颗粒可以使亲水性表面成为半吸水性的，并且疏水性表面可以成为超疏水性的。

Description

具有粗糙润湿和非润湿区的电子封装
技术领域
本发明涉及用于保持集成电路芯片的集成电路封装的制造。
背景技术
在一些集成电路封装中，基板可以安装一个或多个集成电路芯片。在芯片和基板之间可以有底填(underfill)材料。有利地，该材料填满芯片和基板之间的区域，但不会从其向外过量延伸。如此会对封装部分的操作造成不良的影响。例如，当底填材料注入在集成电路和基板之间时，它会趋于向外流动，产生从集成电路管芯下方向外延伸的所谓材料舌状物(tongue of material)。
可以通过毛细流进行底填。为了实现高吞吐次数，可以形成对于基板阻焊剂具有非常低的粘度和良好润湿性的底填物。此外，可以在高温下对底填物进行分配。所有这些因素的结果是在封装的底填物分配侧上留下了底填舌状物。该舌状物有效地增加了封装的覆盖区域(footprint)。
附图说明
图1是根据本发明的一个实施例的封装的放大截面图；
图2是图1所示的封装基板的上表面的一部分的显著放大的截面图；以及
图3是另一实施例的放大截面图。
具体实施方式
在半导体集成电路封装中的一些应用中，希望具有这样一种基板，其具有润湿和非润湿区域。更希望基板具有超可润湿性和超不可润湿性的区域。换句话说，同一基板可以具有超疏水性的表面区域以及半吸水性(wicking)和亲水性的表面区域。结果，可以严密控制底填料和其它焊剂使其在基板上的有限区域中扩散。
在本发明的一些实施例中，可以将细小颗粒涂层施加在基板表面上。例如，所述涂层可以是硅纳米棒，其在基板上生长并且延伸到高达500纳米的高度。如果基板的上表面是相对亲水的，则表面粗糙的纳米颗粒的存在用于极大地增加所谓的半吸水的表面的亲水性。相反，如果同一表面是疏水性的，则它可以导致高度疏水性或极端非润湿性的表面。
通常，高能(例如亲水)表面具有大于或等于70mN/m的表面能。低能(憎水)表面具有小于或等于20mN/m的表面能。
参见图1，基板12具有使用焊球16以倒装芯片的设置方式安装在其上的集成电路管芯14，所述焊球16用于将管芯14电连接和机械连接到基板12。基板12可以具有向管芯14提供信号并将信号从管芯14传送到外部器件的互连。
基板12的上表面可以具有外围区域22(例如22a和22b)，其可以是高度非润湿性的和疏水性的。相反，管芯下方的区域24以及从管芯下方稍微向上倾斜的区域可以是非常亲水和半吸水的。因此，例如利用毛细力一旦在方向A注入的底填材料20从疏水性表面22a和22b移开，并且散布在亲水性表面24上。因为表面22和24是半吸水性的，所以增强了正常的润湿和非润湿效应。结果，减小了底填物20通过沿与箭头A相反的方向向外延伸而形成舌状物的趋势。这样可以实现较小的封装占用面积，在一些情况下，因为底填舌状物不耗费基板表面。
参见图3，作为另一个例子，封装30可以包括基板36，其包括诸如焊球的互连44。可以在基板36内找到电垂直通孔38，其连接到水平金属化41以在通过互连44连接的外界和封装30内的集成电路管芯32a、32b和32c之间传送信号。密封剂52可以包围管芯32a、32b和32c。
可以通过键合引线56将管芯32a连接到基板36上的焊盘46。可以通过水平金属化41将焊盘46连接到垂直通孔38，并最终向下达到与互连44连接的焊盘43。以这种方式，可以在外部器件和管芯32a之间进行通信。同样，键合引线48可以经由接触50连接到管芯32b。可以以各种不同的方式提供与管芯32c的连接。可以通过管芯附着粘合层34将管芯32c耦合到管芯32b。同样，可以通过管芯附着粘合层34将管芯32b耦合到管芯32a。然而，也可以利用其它技术将管芯紧固在一起。
在这种情况下，希望防止用于管芯附着34的粘合剂渗出。如果管芯附着物渗出，则其可能污染用于键合引线接触的区域。因此，可以将表面54处理成高度非润湿性的或超疏水性的。这些表面可以设置在管芯32b的上表面和管芯32c的上表面上。
再来参见图2，在本发明的一些实施例中，可以经由液体涂层将细小颗粒40生长或沉积在基板12上。例如。颗粒40可以是纳米棒、球形颗粒、四脚锥体(tetrapod)等。它们可以由包括但不限于硅石、氧化铝、氧化锆、硅、碳等的材料制成。然而，可以利用其它成分和形状。通常，希望这些颗粒40在基板12的表面之上的高度为5到500纳米。这对于提高所得到的表面的疏水性或亲水性是有效的。
当希望在同一表面上形成亲水性结构和疏水性结构时，可以形成相同的精细元件。即，可以在最终应为超疏水性的或半吸水性和亲水性的表面上形成成分和尺寸相当的颗粒40。于是，可以对将要为疏水性的表面进行处理，这些处理例如为氟化或烷化作用以及氢氟酸处理，但又不限于此。可以利用适当的、可除去的掩模42遮掩将保持为亲水性的表面。
也可以使用其它疏水性处理。例如，氟化硅烷是疏水性的。可以通过醇基或利用官能化(functionalization)之前的等离子体处理容易将它们官能化至表面。例如，组分R3-Si-OH与HO-基板阻焊剂一起产生R3-Si-O基板阻焊剂。组分R可以是但不限于烷烃、乙烯基或氟。或者，可以使用不同的处理来产生亲水性表面。例如，胺封端的硅烷是亲水性的。另外，烷烃硅烷是憎水性的。此外，长链烷烃自组合成单层，在表面上形成非常高密度的硅烷。可以通过溶剂途径(solventroute)或通过汽相沉积来沉积这种单层。另外，阻焊剂表面上的羟基基团可以使硅烷醇与适当的部分(moiety)交联，以使它们对于底填物是非润湿性的。可以利用硅烷处理对表面的特定区域进行构图以获得对于底填物是非润湿性的区域。
硅烷涂层可以包括但不限于二氯二甲基硅烷、二氯二乙基硅烷、双二甲基氨基二甲基硅烷、二甲基氨基三甲基硅烷、六甲基二硅氮烷。
在本发明的一些实施例中，可以浸渍该结构以施加氢氟酸。氢氟酸可以为百分之48到51，并且在本发明的一些实施例中可以暴露一分钟。
可以利用掠射角(glancing angle)沉积技术以纳米棒的形式进行颗粒40的生长。掠射角沉积技术涉及在沿着两个不同方向旋转的基板上进行物理汽相沉积。掠射角形成在输入蒸汽源和其上将要生长纳米棒的表面之间。在一些情况下，该角度可以从70度到90度。可以采用0.2nMs-1沉积速率以及0.05revs-1的旋转速度。可以使用具有石英晶体厚度监测器的电子束蒸发器来检测膜厚度。
因此，可以选择性地将表面形成为高度亲水性的或高度疏水性的。疏水性区域可以是有效的防止侵入区以防止焊剂(fluxes)、底填物或密封剂(所提到的一些例子)的侵入。相反，可以通过产生半吸水性表面，来提高底填物和模制化合物通过不断缩小的封装之上的狭窄通道的扩散。
纳米颗粒通常其尺寸中的至少之一小于100纳米。然而，如这里所使用的那样，细小颗粒为尺寸高达500纳米的颗粒。适当的形状包括但不限于球形、四脚锥体、棒、管、以及盘，这只是提及一些例子。适当的材料包括但不限于硅石、氧化铝、氧化钛、氧化锆、以及碳。
代替生长颗粒，可以利用沉积的颗粒。在一些实施例中，混合并且然后沉积具有至少两种不同尺寸的颗粒，例如微球体。可以通过粘合剂涂层固定颗粒，但也可以利用其它技术。
在其它实施例中，可以通过破坏表面或使表面凹陷来产生5到500纳米数量级上的突起，从而实现所希望的表面粗糙度。这可以通过溅射、离子轰击(作为两个例子)来实现。
在本说明书中提到“一个实施例”或“实施例”是表示在本发明内所包含的至少一种实施方式中包括连同实施例所描述的特定特征、结构、或特点。因此，短语“一个实施例”或“在实施例中”的出现不一定是指相同的实施例。此外，可以以不同于所示特定实施例的其它适当方式提出特定特征、结构、或特点，并且所有这些方式可以包含在本申请的权利要求书中。
尽管已经针对有限数量的实施例对本发明进行了说明，但是本领域技术人员将能从其中想到各种修改和变形。所附权利要求书旨在覆盖落入本发明的真正精神和范围内的所有这些修改和变形。

Claims (30)

1.一种方法，包括：
形成半导体集成电路封装表面；
在所述表面上形成尺寸小于500纳米的突起；以及
将液体施加到所述封装表面。
2.根据权利要求1所述的方法，包括在所述表面上在两个不同的区域中形成所述突起，使得一个区域是疏水性的，而另一个区域是亲水性的。
3.根据权利要求2所述的方法，包括以封装基板的形式形成半导体集成封装表面。
4.根据权利要求3所述的方法，包括形成基本上相似尺寸的所述突起。
5.根据权利要求1所述的方法，包括通过轰击所述表面形成突起。
6.根据权利要求5所述的方法，其中施加液体包括在所述基板上方设置管芯，并且将底填材料注入在所述管芯和所述基板之间。
7.根据权利要求6所述的方法，包括在所述管芯周围使用疏水性颗粒在所述基板上限定防止侵入区，并且在所述基板和所述管芯之间设置亲水性颗粒区域。
8.根据权利要求1所述的方法，包括形成集成电路管芯的所述表面并处理所述突起，以便所述突起在一个区域中是疏水性的，而在另一个区域中是亲水性的。
9.根据权利要求8所述的方法，包括向所述表面提供管芯附着物，使得所述疏水性突起减小所述管芯附着材料的渗出。
10.根据权利要求1所述的方法，包括利用硅烷涂覆所述突起。
11.一种集成电路封装，包括：
封装表面；
形成在所述表面上的突起，其具有小于500纳米的尺寸；以及
施加到所述突起上的液体。
12.根据权利要求11所述的封装，其中所述突起是疏水性的。
13.根据权利要求11所述的封装，其中所述突起是亲水性的。
14.根据权利要求11所述的封装，其中在这些突起中有一些是亲水性的，并且所述颗粒中有一些是疏水性的。
15.根据权利要求11所述的封装，其中所述液体为底填物。
16.根据权利要求11所述的封装，其中所述液体为管芯附着物。
17.根据权利要求11所述的封装，其中所述表面为管芯表面。
18.根据权利要求11所述的封装，其中所述表面为封装基板表面。
19.根据权利要求18所述的封装，其中亲水性突起形成在所述基板上，管芯设置在所述基板上，在所述基板上所述疏水性突起形成在所述管芯周围，所述基板在所述管芯下方的表面具有形成在其上的亲水性的突起，并且焊球设置在所述管芯和所述基板之间。
20.根据权利要求11所述的封装，其中所述表面为管芯表面并且管芯附着物附着到所述管芯表面，接触所述管芯附着物的区域是亲水性的，而所述管芯附着物周围的区域是疏水性的。
21.根据权利要求11所述的封装，其中所述突起涂覆有硅烷。
22.一种集成电路封装，包括：
封装表面，在所述表面上具有尺寸小于500纳米的突起；以及
所述表面具有大于或等于70mN/m的表面能，或者具有小于或等于20mN/m的表面能。
23.根据权利要求22所述的封装，其中所述表面包括亲水性区域和疏水性区域。
24.根据权利要求22所述的封装，其中所述表面为管芯表面。
25.根据权利要求22所述的封装，其中所述表面为基板表面。
26.根据权利要求22所述的封装，其中所述表面部分覆盖有底填物，设置管芯以将所述底填物夹在所述管芯和所述表面之间。
27.根据权利要求22所述的封装，包括基板和叠置在所述基板上的管芯，管芯附着物设置在所述基板和所述管芯之间，所述管芯附着物由所述表面的疏水性区域所包围，并且所述管芯接触所述表面的亲水性区域。
28.根据权利要求22所述的封装，其中所述突起涂覆有硅烷。
29.根据权利要求28所述的封装，其中所述涂覆有硅烷的突起是疏水性的。
30.根据权利要求28所述的封装，其中所述涂覆有硅烷的突起是亲水性的。
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