CN101095382A - Wiring board and manufacturing method thereof - Google Patents

Abstract

A wiring board (1) has a wiring laminated part (6) where a dielectric layer and a conductive layer are built up at least on one major surface of a board core part (2). The wiring laminated part (6) includes a composite laminated portion (8) where a polymer material dielectric layer (3A), a conductive layer (4B), and a ceramic dielectric layer (5) are built up in order of mention from the board core part (2) side in contact with one another. The conductive layer (4B) of the composite laminated portion (8) has a conductor-side cut (18) formed by cutting a part of the conductive layer (4B) in a direction parallel to the conductive layer (4B), and the ceramic dielectric layer (5) has a ceramic-side cut (16) formed by cutting a part of the ceramic dielectric layer (5) in a direction parallel to the ceramic dielectric layer (5), thus forming a communication cut (21) where the ceramic-side cut (16) and the conductive-side cut (18) communicate with each other. The polymer material forming the polymer material dielectric layer (3A) is placed in the communication cut (21) in such a way that it extends through the conductor-side cut (18) to the ceramic-side cut (16).

Description

Wiring plate and wiring board manufacturing method

Technical field

[0001] the present invention relates to a kind of wiring plate and a kind of Wiring board manufacturing method.

Background technology

[0002] patent documentation: do not examine the open No.2003-142624 of Japan Patent

[0003] because in integrated circuit (IC)-components such as CPU and other high speeds LSI, the power line that goes out from the public power bifurcated is assigned to a plurality of circuit modules the integrated circuit, will there be following problem in this, promptly when a large amount of unit in the circuit module carry out speed-sensitive switch simultaneously, can from power supply, extract big electric current simultaneously out and the consequent variation of supply voltage can become a kind of noise, this noise can be sent to each circuit module by power line.Therefore from the viewpoint of the transmission of the intermodule noise that suppresses to be caused by power source change, effective ways are to provide a decoupling capacitor to reduce source impedance for each circuit module.

[0004] in addition, under the situation of large scale integrated circuit such as CPU, very big and number power supply terminal and earth terminal of circuit module quantity wherein also has ever-increasing trend, so the spacing between the terminal is more and more littler.Decoupling capacitor need be connected on the every power line that extends to each circuit module, so not only different with the viewpoint of mounting technique, and with electric capacity and the integrated circuit with terminal that a large amount of high density arrange separately be connected also with trend toward miniaturization etc. and disagree.

[0005] therefore, in patent documentation 1, disclosed a kind of decoupling capacitor, it has multilayer strong dielectric and metal level and has a large amount of integrated circuit sides with the high density arrangement and separates the capacitor terminal that is connected.Because in high-frequency range (special in frequency range) more than or equal to 100MHz, the noise problem that mains voltage variations causes during wherein by speed-sensitive switch will become remarkable, the relative importance of induction reactance item will become greatly in the source impedance, and power supply terminal and earth terminal are positioned as close to placement can effectively reduce source impedance.In addition, exist such problem promptly when the inductance of terminal part increases, will combine the generation resonance point, the bandwidth that obtains the low effect of abundant impedance drop is diminished with the capacitive component of decoupling capacitor.Therefore, the advantage of making between the aforesaid terminal the littler electric capacity of distance is, except merely reducing the cell size, it has can reduce source impedance and for this reduction increases bandwidth, and this is a primary goal.

[0006] however in aforesaid patent documentation 1, a kind of structure is provided, wherein electric capacity is installed on the intermediate plate that is clipped between electronic component and the wiring plate, caused following problem like this, i.e. insertion owing to intermediate plate has increased the necessary operating time that electronic component is installed and has made the component height that reduces wiring plate and electronic component become difficult on wiring plate.Inventors have studied be installed in that use made by polymer built-in layer of a kind of electric capacity by will using the high dielectric ceramic layer with the replacement of the part of above-mentioned built-in layer as the method in so-called organic wiring plate of dielectric layer.Can reduce component height like this and following problem still but occur.

Be that adhesion between built-in layer and the capacitive part might reduce, particularly when the thermal cycle of the reflow soldering process that connects such as the flip-chip that is used for electronic component is applied to built-in layer and capacitive part, heat shear stress level between the layer is because the linear expansion coefficient between built-in layer and the high inductance ceramic layer is different becomes greatly, so causes the problem of peeling off or the like probably.In addition, use the electric capacity of high induction thin layers of ceramic in the built-in layer that connection is used to connect up, to be difficult to handle, therefore caused the problem of making inefficiency.

[0007] in addition, prior art has caused following point, because form the capacitance that electric capacity can increase formation on the wide zone of trying one's best comparing, if but the wiring plate individual unit is identical with capacitor size will to cut away capacitive part along being with so in cutting with the overall dimension of the individual unit (encapsulation) of wiring plate.

(1) if the electrode of being made by metal such as Cu is exposed on the end face of encapsulation, can cause the oxide etch of electrode so after cutting.

(2) compare between the adhesiveness on the interface between electrode and the ceramic dielectric layer and the polymeric material more weak, therefore may since the shear stress during cutting cause that interlayer is peeled off and form steam afterwards and invade the path.

(3) in when cutting sinking of the electrode made by metal such as Cu being taken place, and is short-circuited probably between layer.

(4) compare with polymer monomer, the load the when electrode of being made by metal such as Cu, the ceramic dielectric layer of particularly being made by strong dielectric such as barium titanate have increased cutting has also quickened the wearing and tearing of blade and cracked.

[0008] in addition, the inventor has studied, in using the wiring plate of built-in resin insulating barrier make by polymeric material, in organic wiring plate, by install and use the electric capacity of high-dielectric ceramic layer with the replacement of the part of above-mentioned built-in resin insulating barrier as dielectric layer.This makes has realized littler component height than the structure of using intermediate plate.

[0009] when considering on first side (front) of core board part and second side (back side), all to form electric capacity, if only just can obtain enough capacitances on a side, electric capacity should only be formed on first side that has loaded electronic component to suppress the increase of cost.If used a kind of like this structure, following problem will occur.

[0010] problem is to be used for can exerting an influence on the element on second side at the treatment fluid that forms electric capacity on first side.Can cause problem because it can corrode polymeric material especially for the surface decontamination treatment fluid that removes residue on the through hole.In common organic wiring plate manufacture process, build-up process carries out in the both sides of core board part simultaneously, so just can not cause that a certain side is by the problem of macro-corrosion.Yet, so just can not use this theory if having on the side that the electric capacity of high-dielectric ceramic layer only is formed at core board part.When the conductor layer of lateral electrode is formed on forming electric capacity, form the core board part side conductor layer that through hole is used for connecting this conductor layer and same polarity.Formation is used for forming the perforation of through hole and forms via conductors at the inner surface of boring a hole, and therefore is necessary to clean before forming conductor and bores a hole.When perforation was cleaned, the polymeric dielectric layer that is exposed on second side had been subjected to the unnecessary corrosiveness of cleaning fluid.For this reason, caused the not identity property of surface condition between the polymeric dielectric layer that after electric capacity forms, newly is formed on first side and the polymeric dielectric layer on second side.This fact means and is difficult to form the coating with uniform thickness and first side and second side of same quality.

[0011] another problem is that first side and second side become unequal but depend on whether formed electric capacity thereon on mechanical property.This fact means and causes after thermal history probably such as defective crooked or that peel off.

Summary of the invention

[0012] an object of the present invention is to provide a kind of wiring board manufacturing method, it can easily be made has a kind ofly had the ceramic dielectric layer laminated and the wiring plate of the structure of polymeric dielectric layer, and a kind of wiring plate that produces according to this method is provided and can be difficult for causing such as the problem of peeling off in processes such as reflow soldering process in the adhesion increasing between the layer.

[0013] another object of the present invention provides a kind of wiring plate, its structure can prevent that in having the wiring plate of built-in electric capacity this electric capacity is exposed to the end face of encapsulation, and be difficult for causing the short circuit between the layer, the outside end face of the ceramic dielectric layer by will forming electric capacity further returns to obtain high reliability from the outer end reduction of area of ceramic dielectric layer from the end face withdrawal of encapsulation and with the outside end face of the electrode of electric capacity simultaneously.

[0014] in order to realize above-mentioned target, provide a kind of method of making wiring plate according to first aspect present invention, this wiring plate be included in be formed with at least one first type surface of core board part wherein piled up dielectric layer and conductor layer pile up the wiring layer part, this piles up wiring layer and partly comprises and pile up the composite bed part, polymeric dielectric layer wherein, conductor layer and ceramic dielectric layer are stacked from core board part one side in this order so that contact each other, the method is characterized in that order carries out following steps: be formed in this order on the first type surface of transfer base substrate to make the first stack layer assembly manufacturing step of the first stack layer assembly by making ceramic dielectric layer and conductor layer; By the polymeric dielectric layer is formed on the core board first type surface partly to make the second stack layer assembly manufacturing step of the second stack layer assembly; The bonding step that the conductor layer of the first stack layer assembly is bonded to the polymeric dielectric layer of second stack layer; And transfer base substrate removed step from the transfer base substrate that the ceramic dielectric layer removes.

[0015] according to above-mentioned Wiring board manufacturing method, when making a kind of wiring plate, thereby ceramic dielectric layer and conductor layer are formed on the first type surface of transfer base substrate have in this order formed the first stack layer assembly, the first stack layer stack of components removes transfer base substrate then by the polymeric dielectric layer is formed on the second stack layer assembly that forms on the first type surface of core board part so that they bond to together mutually from the ceramic dielectric layer; Wherein, wiring plate be included in core board part be formed with on the first type surface at least wherein piled up dielectric layer and conductor layer pile up the wiring layer part, this piles up wiring layer and comprises partly and pile up the composite bed part that wherein polymeric dielectric layer (being so-called built-in layer), conductor layer and ceramic dielectric layer are stacked so that contact each other from core board part one side in this order.That is to say that thin and crisp ceramic dielectric layer can strengthen and is provided for bonding step and do not need himself is handled by transfer base substrate, therefore can greatly improve manufacturing efficient and rate of finished products with the wiring plate that piles up composite bed, wherein in piling up composite bed, polymeric dielectric layer, conductor layer and ceramic dielectric layer are by piling up as mentioned above.

[0016] according to a second aspect of the invention, provide a kind of wiring plate, it is characterized in that, the wiring layer that piles up that has wherein piled up dielectric layer and conductor layer partly is formed on core board at least one first type surface partly; Piling up wiring layer partly comprises and piles up the composite bed part, wherein polymeric dielectric layer, conductor layer and ceramic dielectric layer are stacked so that contact each other from core board part one side in this order, the conductor layer that piles up in the composite bed part is partly cut to obtain conductor side cutting part by (in-plane) direction in face, the ceramic dielectric layer is partly cut to obtain ceramic side cutting part by (in-plane) direction in face, and ceramic side cutting part and conductor side cutting part are connected and are communicated with cutting part to form; The polymer that constitutes the polymeric dielectric layer is received in and is communicated with cutting part to extend to ceramic side cutting part via conductor side cutting part.

[0017] utilizes above-mentioned wiring plate structure of the present invention, polymeric dielectric layer, conductor layer and ceramic dielectric layer are stacked so that contacted each other piling up the composite bed from core board part one side in this order therein, the polymer that constitutes the polymeric dielectric layer is received in the connection cutting part that is formed in conductor layer and the ceramic dielectric layer, therefore can make by grappling effect (anchoreffect) to cause when adhesion is stronger to be difficult in reflow process etc. such as problem such as peeling off.

[0018] above-mentioned wiring plate can be used the manufacture method manufacturing among the present invention.That is to say that the first stack layer assembly manufacturing step is carried out in the mode that may further comprise the steps: in the ceramic dielectric layer on being formed at a first type surface of transfer base substrate with the ceramic side cutting part patterning step of ceramic side cutting part patterning; The conductor layer that forms conductor layer on the ceramic dielectric layer behind the patterning forms step; And with mode that conductor side cutting part and ceramic side cutting part are communicated with conductor side cutting part patterning step with the conductor side cutting part patterning in the conductor layer.In bonding step, have the state that is communicated with ceramic side cutting part and is in uncured or semi-solid preparation with the polymeric dielectric layer on the first stack layer assembly of the connection cutting part of the conductor side cutting part of connection with it and piled up the second stack layer assembly having formed, be stacked on first type surface on the first type surface of opening one side that is communicated with cutting part the polymeric dielectric layer, under this condition, the first stack layer assembly and the second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of polymeric dielectric layer be communicated with in the cutting part and after with polymer cure.By this method, the polymer of the uncured or semi-solid preparation of formation polymeric dielectric layer is sure by the bonding connection cutting part that is received under the pressure, and therefore can obtain the structure of above-mentioned wiring plate easily.

[0019] in addition, in the time will being called first conductor layer at the conductor layer in piling up the composite bed part, wiring plate of the present invention comprises, be stacked on second conductor layer of a side on the ceramic dielectric layer, opposite with first conductor layer, first conductor layer, ceramic dielectric layer and second conductor layer can be formed electric capacity.By this structure, the electric capacity that is used for effects such as decoupling can be installed to contain polymeric dielectric layer (built-in layer) pile up the wiring layer part, and do not need to use the intermediate plate that electric capacity wherein has been installed between wiring plate and electronic component (not shown), therefore can reduce the height of assembly.In this example, preferably remove after step finishes, on the main surface side of the ceramic dielectric layer that has removed transfer base substrate, form second conductor layer at transfer base substrate.

[0020] according to a third aspect of the invention we, a kind of wiring plate is provided, comprise wherein polymeric dielectric layer, conductor layer and be stacked in this order so that the contacted each other composite bed part of piling up by the ceramic dielectric layer that the pottery of high-k is made, this wiring plate is characterised in that the conductor layer that piles up in the composite bed is cut to obtain conductor side cutting part by direction top in face; The ceramic dielectric layer is cut to obtain ceramic side cutting part by direction top in face; Pottery side cutting part and conductor side cutting part are connected and are communicated with cutting part to form; The polymer that constitutes the polymeric dielectric layer is received in and is communicated with cutting part to extend to ceramic side cutting part via conductor side cutting part, when the conductor layer that the conductor layer in piling up composite bed part is called as first conductor layer and is stacked on the opposite side with first conductor layer on the ceramic dielectric layer is called as second conductor layer, the outside end face of ceramic dielectric layer is from the end face of the wiring plate unit first retraction width that bounces back at least, first conductor layer and second conductor layer outside end face from the end face of the wiring plate unit second retraction width bigger that bounce back at least than the first retraction width; And the electric capacity of forming by first conductor layer, ceramic dielectric layer and second conductor layer.

[0021] according to a forth aspect of the invention, a kind of method of making wiring plate is provided, this wiring plate has wherein polymeric dielectric layer, conductor layer and is stacked in this order so that the contacted each other composite bed part of piling up by the ceramic dielectric layer that the pottery of high-k is made, and the method is characterized in that order carries out following steps: ceramic dielectric layer and conductor layer are formed on the first type surface of transfer base substrate in this order to make the first stack layer assembly manufacturing step of the first stack layer assembly; The polymeric dielectric layer is formed on the core board first type surface partly to make the second stack layer assembly manufacturing step of the second stack layer assembly; Bonding step, be used for the conductor layer of a plurality of first stack layer assemblies and the polymeric dielectric layer of the second stack layer assembly are bonded together, so that the conductor layer in will piling up the composite bed part is called first conductor layer and will be stacked on the ceramic dielectric layer, when the conductor layer on the opposite side with first conductor layer is called second conductor layer, the outside end face that the makes the ceramic dielectric layer first retraction width that bounces back at least from the end face of wiring plate unit, and make first conductor layer and second conductor layer outside end face retraction second retraction width bigger at least from the end face of wiring plate unit than the first retraction width, by first conductor layer, the ceramic dielectric layer and second conductor layer are formed electric capacity; And transfer base substrate removed step from the transfer base substrate that the ceramic dielectric layer removes.

[0022] utilizes the wiring plate of third aspect present invention and the Wiring board manufacturing method of fourth aspect present invention, because the outside end face of ceramic dielectric layer is from the end face of the wiring plate unit first retraction width that bounces back at least, the outside end face of first conductor layer and second conductor layer is from the end face of the wiring plate unit second retraction width bigger than the first retraction width that bounce back at least, and form electric capacity by first conductor layer, ceramic dielectric layer and second conductor layer, will obtain following effect.

(1) because first conductor layer, ceramic dielectric layer and second conductor layer never on the end face that is exposed to encapsulation after the cutting, so can prevent to encapsulate oxide etch on the end face.

(2) interlayer that the shear stress in the time of preventing by cutting causes is peeled off with steam and is invaded the path.

(3) can prevent short circuit between by the electrode of making by Cu etc. that takes place in when cutting sagging caused layer.

(4) by the ceramic dielectric layer avoiding cutting the electrode made by metal such as Cu and make by strong dielectric such as the barium titanate load from can reduce cutting the time.

[0023] in addition, the structure that is applicable to wiring plate of the present invention is, for example at least one first type surface of wiring plate, be formed with the wiring layer that piles up that has piled up dielectric layer and conductor layer, pile up to have on the wiring layer at this and stacked gradually polymeric dielectric layer (being built-in resin insulating barrier), conductor layer and ceramic dielectric layer and the contacted each other composite bed part of piling up from core board one side; But the present invention also is applicable to so-called seedless core that does not have core board etc. certainly.

[0024] according to a fifth aspect of the invention, a kind of method of making wiring plate is provided, this wiring plate comprises wherein polymeric dielectric layer, conductor layer and is stacked in this order so that the contacted each other composite bed part of piling up by the ceramic dielectric layer that the pottery of high-k is made, and the method is characterized in that order carries out following steps: ceramic dielectric layer and conductor layer are formed on the first type surface of transfer base substrate in this order to make the first stack layer assembly manufacturing step of the first stack layer assembly; With the first stack layer components apart be manufactured on the second stack layer assembly manufacturing step of the second stack layer assembly that has the polymeric dielectric layer on gluing of surfaces one side; The polymeric dielectric layer of the conductor layer of the first stack layer assembly and second stack layer is bonded to together bonding step; And transfer base substrate removed step from the transfer base substrate that the ceramic dielectric layer removes.

[0025] utilizes the Wiring board manufacturing method of fifth aspect present invention, when making wiring plate, ceramic dielectric layer and conductor layer are formed on the first type surface of transfer base substrate in this order to form the first stack layer assembly, first stack layer is placed on to have on the second stack layer assembly of polymeric dielectric layer and with both in gluing of surfaces one side and bonds to together, removes transfer base substrate then; This wiring plate comprises wherein polymeric dielectric layer, conductor layer and is stacked in this order so that the contacted each other composite bed part of piling up by the ceramic dielectric layer that the pottery of high-k is made.That is to say that thin and crisp ceramic dielectric layer can strengthen and is provided for bonding step and do not need separately it to be handled by transfer base substrate, therefore can greatly improve manufacturing efficient and rate of finished products with the wiring plate that piles up composite bed, wherein in piling up composite bed polymeric dielectric layer, conductor layer and ceramic dielectric layer by piling up as mentioned above.

[0026] in the present invention, the pottery of high-k refers to electric medium constant more than or equal to 10 pottery, especially, when needing high-k ceramic, is necessary to adopt the pottery with strong dielectric characteristic.Pottery as high-k, can enumerate strong dielectric compound oxidate ceramic with perovskite type crystal structure, such as having extra high electric medium constant and its production by one or more potteries formed in barium titanate, strontium titanates and the lead titanates relatively easily, therefore be applicable to the present invention.

[0027] in bonding step by adopting the method that pressurization comes the bonding first stack layer assembly and the second stack layer assembly on stacking direction, the adhesion of polymeric dielectric layer after bonding to together of the conductor layer of first stack layer and second stack layer can be stronger.

[0028] in using stack layer assembly of the present invention, can constitute above-mentioned composite bed unit institute so that the conductor layer that piles up in the composite bed is cut to obtain conductor side cutting part by part on the direction in face, the ceramic dielectric layer is cut to obtain ceramic side cutting part by part on the direction in face, pottery side cutting part and conductor side cutting part are coupled to be communicated with cutting part to form, and the polymer that constitutes the polymeric dielectric layer is received in and is communicated with cutting part to extend to ceramic side cutting part via conductor side cutting part.Like this, the polymer that constitutes the polymeric dielectric layer is received in the connection cutting part that is formed in conductor layer and the ceramic dielectric layer, and therefore makes adhesion stronger and be difficult for causing when the reflow process etc. such as problem such as peeling off by the grappling effect.

[0029] this structure piles up wiring layer part and can use manufacture method of the present invention to make as follows.The mode of the just this execution first stack layer assembly manufacturing step may further comprise the steps: the ceramic side cutting part patterning step that will be formed at the ceramic side cutting part patterning in the ceramic dielectric layer on the first type surface of transfer base substrate; The conductor layer that forms conductor layer on the ceramic dielectric layer behind the patterning forms step; And with the conductor side cutting part patterning in the conductor layer to be used for being communicated with the conductor side cutting part patterning step of conductor side cutting part and ceramic side cutting part.In bonding step, under being in the state of uncured or semi-solid preparation, the polymeric dielectric layer piling up second stack layer on the first stack layer assembly of the connection cutting part that has formed the conductor side cutting part that comprises ceramic side cutting part and be communicated with it, so that the first type surface of polymeric dielectric layer is bonded on the first type surface of opening one side that is communicated with cutting part, the first stack layer assembly under this condition and the second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of polymeric dielectric layer be communicated with in the cutting part and after cure polymer.By this method, the polymer of the uncured or semi-solid preparation of formation polymeric dielectric layer is sure by the bonding connection cutting part that is received under the pressure, and therefore can obtain the structure of above-mentioned wiring plate easily.

[0030] except being used for electric capacity, the ceramic dielectric layer can also be used as the dielectric layer that constitutes distributed constant circuit assembly such as the microstrip line, strip line and the coplanar waveguide that pile up.By forming dielectric layer from the ceramic dielectric layer, can improve the wavelength reduction rate of linear conductor in the distributed constant circuit that piles up, therefore can make circuit unit (such as λ/4 transmission lines) compacter.In addition, because reduced to be used to the transmission line width of characteristic impedances such as obtaining, satisfy the requirement of high-frequency circuit characteristic simultaneously so can easily realize the miniaturization of wiring portion.For example the first type surface (such as ground plane or bus plane) by cover the ceramic dielectric layer with the exemplary metallic surfaces conductor on the other hand, by place transmission line conductors on another first type surface, can obtain microstrip line or strip lines configuration.In this example, transmission line conductors is called as first conductor layer, and the first type surface as the transmission line conductors background area that the polymeric dielectric layer covers transmission line conductors and connects above-mentioned ceramic dielectric layer can be set.

[0031] according to a sixth aspect of the invention, a kind of method of making electric capacity internally-arranged type wiring plate is provided, this wiring plate has and has wherein formed along the support matrices of the vertically extending conductor of thickness direction, this support matrices on first side and second side, formed respectively piled up polymeric dielectric layer and conductor pile up the wiring layer part, the first side wiring layer part that only is arranged on first side has formed the electric capacity that comprises the ceramic dielectric layer, be primarily characterized in that and comprise: partly formed first side and pile up the part of wiring layer part and be formed on the base or wherein mode forms the step of piling up the composite bed part, wherein polymeric dielectric layer to pile up composite bed, the conductor and the ceramic dielectric layer that are used as an electrode of electric capacity are stacked so that contact each other from support matrices one side in this order; On support matrices, form the polymeric dielectric layer and pile up the step of wiring layer part to form second side; Form the step of perforation, this perforation is to be used for being exposed under the situation on second side to pile up in the composite bed part in first side at the polymeric dielectric layer being formed for the via conductors that interlayer connects; Under the polymeric dielectric layer is exposed to situation on second side, use the chemical liquid of corrosion strength to clean the step that is formed at the perforation on first side with corrosion polymer; And on the perforation inner surface, form the conductor that is used as via conductors, on an opposite side with first conductor layer of ceramic dielectric layer, pile up second conductor layer and pass through the step that first conductor layer, ceramic dielectric layer and second conductor layer are formed electric capacity thus; And use another kind of polymeric dielectric layer covering surfaces by the chemicals roughening the second side polymeric dielectric layer and the step that new and old polymeric dielectric layer is connected together.

[0032] electric capacity internally-arranged type wiring plate is being used on the structure that interlayer is electrically connected and other have no difference.Just, constituting second conductor layer of capacitance electrode and the electrical connection between the conductor layer on the support matrices realizes by via conductors.The perforation that is used for via conductors can form by laser irradiation technology or photoetching technique, but in adopting both arbitrary technology the time, and the cleaning that needs to clean through hole prevents the generation of bad connection.Though ideally cleaning step only is used for first, the method for using in the batch process of paying attention to productivity ratio is whole work-piece to be immersed be equipped with in the flushing tank of chemicals.Because chemicals corrosion polymer, the surface of second side polymeric dielectric layer roughening inevitably.In foregoing invention, cover the second side polymeric dielectric layer with another kind of polymeric dielectric layer.In view of the above, new and old polymeric dielectric layer is combined together to form thick polymeric dielectric layer.Just, the surface condition that newly is formed at polymeric dielectric layer on first side and the polymeric dielectric layer on second side will become impartial.So just can on first side and second side, form the coating of thickness and quality equalization.

[0033] though considered that in cleaning first side through hole application of tape is covered (tape masking) and prevented that the second side polymeric dielectric laminar surface is coarse on the polymeric dielectric layer, so owing to be removed such covering after the adhesive tape and pile up wiring layer part and second side to pile up the not identity property of wiring layer mechanical property partly ineffective for proofreading and correct first side.According to the present invention, owing to remedied the insufficient section that electric capacity is not provided by the thick polymer dielectric layer, so can increase the intensity that second side is piled up the wiring layer part, therefore second side is piled up wiring layer part and first and is piled up the wiring layer part and can reach strength balance well, therefore can obtain intensity enough to counter-bending and structure that peel off.

[0034] in foregoing invention, is specially the step of laminated polymeric thing film or applies the step of liquid polymer with the step of another polymeric dielectric layer overlie polymer dielectric layer.Especially, the method for lamination with built-in resin film (can be from AjinomotoCo., Inc. obtain) of equal equal thickness and characteristic is fit to.By this method, can use the device that in common build-up process, uses, therefore can be used for reducing manufacturing cost.Based on same reason, first side is piled up wiring layer and second side and is piled up the formation of wiring layer and undertaken by build-up process, wherein carry out with another dielectric layer covering the step of the second side polymeric dielectric layer and on first side, forming the step of new dielectric layer simultaneously, and form other conductor layer by through hole formation step and pattern plating step.

[0035] in addition, the inventor notice form to form electric capacity pile up the composite bed part in, must overcome following technical problem (1) and (2).

(1) capacitive part may be lowered with respect to the adhesion of built-in layer resin insulating barrier and conductor layer, when particularly the reflow soldering process that connects owing to the flip-chip that is used for electronic unit when them stands thermal cycle, therefore the shear stress level of interlayer uprises owing to built-in resin insulating barrier is different with the linear expansion coefficient of high-dielectric ceramic layer, has caused such as problem such as peeling off.

(2) use the electric capacity of high-dielectric ceramic thin layer when connecting wiring is with built-in resin insulating barrier, to be difficult to handle, therefore caused the problem of low manufacturing efficient.

[0036] can handle such problem by following process.Just, form the step that the step pile up composite bed comprises that following order is carried out: ceramic dielectric layer and conductor layer are formed in this order the first stack layer assembly manufacturing step of making the first stack layer assembly on the first type surface of transfer base substrate; On the first type surface of support matrices, form the second stack layer assembly manufacturing step that the polymeric dielectric layer is made the second stack layer assembly; The polymeric dielectric layer of the conductor layer of the first stack layer assembly and the second stack layer assembly is bonded to together bonding step; And remove step from the transfer base substrate that the ceramic dielectric layer removes transfer base substrate.By doing like this, the reinforcement of thin and crisp ceramic dielectric layer by transfer base substrate just can offer bonding step and not need the coverlet reason of staying alone, therefore can greatly improve to have and pile up composite bed wiring plate manufacturing efficient and rate of finished products partly, polymeric dielectric layer, conductor layer and ceramic dielectric layer pile up by said sequence in piling up composite bed.

[0037] according to a seventh aspect of the invention, the wiring plate that provides a kind of usefulness that electronic unit is installed thereon is characterized in that comprising the support matrices that has wherein formed along the vertically extending via conductors of thickness direction; This support matrices on first side and second side, formed respectively piled up polymeric dielectric layer and conductor pile up the wiring layer part; The first side wiring layer part that only is arranged on first side has formed the electric capacity that comprises the ceramic dielectric layer; First side is piled up wiring layer and is comprised that partly wherein the conductor layer and the ceramic dielectric layer of an electrode of polymeric dielectric layer, formation electric capacity are stacked so that the contacted each other composite bed part of piling up from support matrices one side in this order; The conductor of forming another electrode of electric capacity is formed to be used for covering the ceramic dielectric layer; Being arranged in second side on second side piles up the wiring layer part and is equivalent to first side and piles up the level of composite bed part and comprise the thicker polymeric dielectric layer of polymeric dielectric layer that piles up the composite bed part than first side beginning number from support matrices.

[0038] by foregoing invention, second side is piled up wiring layer and is partly had thicker polymeric dielectric layer, rather than does not comprise electric capacity.Just can make first mechanical property and second of piling up wiring layer part pile up similar and balanced both intensity of composite bed mechanical property partly.Thereby, partly be set to comprise electric capacity even have only first side to pile up wiring layer, also be difficult to cause bending or the problem of peeling off.

[0039] in addition, in above-mentioned wiring plate, the conductor layer quantity that preferably makes second side that is positioned on second side pile up the wiring layer part is piled up the conductor layer quantity of wiring layer part less than first side.In view of the above, can simplify the structure that second side is piled up the wiring layer part.

[0040] according to another aspect of the present invention, provide a kind of wiring plate, it is characterized in that comprising wherein at least one first type surface of device pedestal, piled up dielectric layer and conductor layer pile up the wiring layer part; This piles up wiring layer and comprises partly and pile up the composite bed part that wherein polymeric dielectric layer, conductor layer and ceramic dielectric layer are stacked so that contact each other from support matrices one side in this order; The conductor layer that piles up in the composite bed part is cut to obtain conductor side cutting part by part on the direction in face, the ceramic dielectric layer is cut to obtain ceramic side cutting part by part on the direction in face, pottery side cutting part and conductor side cutting part are connected and are communicated with cutting part to form, and the polymer that constitutes the polymeric dielectric layer is received in and is communicated with cutting part to extend to ceramic side cutting part by conductor side cutting part.

[0041] utilizes the above-mentioned wiring plate structure of seventh aspect present invention, polymeric dielectric layer, conductor layer and ceramic dielectric layer are stacked so that contacted each other piling up the composite bed part from core board part one side in this order therein, the polymer that constitutes the polymeric dielectric layer is received in the connection cutting part that is formed in conductor layer and the ceramic dielectric layer, and makes by the grappling effect therefore that adhesion between the layer is stronger to be difficult to cause such as this class problem of peeling off when the reflow soldering process etc.

[0042] can make above-mentioned wiring plate by the manufacture method of using following sixth aspect present invention.That is, the first stack layer assembly manufacturing step comprises: in the ceramic dielectric layer on being formed at a first type surface of transfer base substrate with the ceramic side cutting part patterning step of ceramic side cutting part patterning; The conductor layer that forms conductor layer on the ceramic dielectric layer behind the patterning forms step; And in conductor layer patterned conductor side cutting part to be used for being communicated with the conductor side cutting part patterning step of conductor side cutting part and ceramic side cutting part.In bonding step, under being in the state of uncured or semi-solid preparation, the polymeric dielectric layer piling up second stack layer on the first stack layer assembly of the connection cutting part that has formed the conductor side cutting part that has ceramic side cutting part and be communicated with it, be bonded on the first type surface that is communicated with cutting part opening one side with first type surface the polymeric dielectric layer, the first stack layer assembly under this condition and the second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of polymeric dielectric layer be communicated with in the cutting part and after cure polymer.By this method, the polymer of the uncured or semi-solid preparation of formation polymeric dielectric layer is sure by the bonding connection cutting part that is received under the pressure, and therefore can obtain the structure of above-mentioned wiring plate easily.

Brief description

[0043]

Fig. 1 is the profile of wiring plate according to the embodiment of the present invention.

Fig. 2 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Fig. 3 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Fig. 4 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Fig. 5 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Fig. 6 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Fig. 7 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Fig. 8 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Fig. 9 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Figure 10 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Figure 11 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Figure 12 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Figure 13 is the schematic diagram of the manufacturing step of wiring plate among Fig. 1.

Figure 14 A is the schematic diagram of the encapsulation that is cut.

Figure 14 B is the schematic diagram of the encapsulation that is cut.

Figure 15 A is the profile that piles up the amplification of wiring layer part.

Figure 15 B is the profile that piles up the amplification of wiring layer part.

Embodiment

[0044] hereinafter, can embodiments of the present invention be described in conjunction with figure.Fig. 1 is the profile of the wiring plate 1 of embodiments of the present invention.Wiring plate 1 is formed, and has formed core conductor layer 4Y, the 4y that forms the wiring metal layer with predetermined pattern respectively on two surfaces of the tabular core 2c that is formed by heat stable resin plate (such as bismaleimide-triazine resin), fiber-reinforced resin plate (such as glass reinforced epoxy) etc. Core conductor layer 4Y, 4y form the planar conductor pattern on the almost whole surface that covers tabular core 2c and are used as bus plane (41 among the figure) or ground plane (40 among the figure).On the other hand, tabular core 2c has the through hole 112 that waits formation by boring, and formation via conductors 30 is used to be electrically connected core conductor layer 4Y and 4y on the inner wall surface of through hole.This accessibke porosity 112 is received in resin filling materials such as epoxy resin.

[0045] in addition, above core conductor layer 4Y, 4y, form first via layer (the built-in layer: dielectric layer) 3Y, 3y that constitutes by polymer such as epoxy resin (and the inorganic filler of being made by silica powder etc. that is used for adjusting dielectric and insulation crushing resistance: this is also similar at other polymeric dielectric layers) respectively.In addition, on the surface of via layer, the 3rd conductor layer 4A, 4a have been formed by plating Cu.In addition, core conductor layer 4Y, 4y are connected by through hole 34 interlayers with the 3rd conductor layer 4A, 4a.Equally, above the 3rd conductor layer 4A, 4a, form the second via layer 3A, 3a respectively.Core board part 2 is made of tabular core 2c, core conductor 4Y, 4y and the first via layer 3Y, 3y.

[0046] on first first type surface, one side (the upside first type surface that shows among the figure) of core board part 2, thus the first polymeric dielectric layer 3A, the first conductor layer 4B that makes by plating Cu layer, ceramic dielectric layer 5, the second conductor layer 4C, the second polymeric dielectric layer 3B that make by plating Cu layer with formed a plurality of terminal pads 10 and be stacked in this order with the 4th conductor layer 4D that is connected electronic unit and form first on the 3rd conductor layer 4A and pile up wiring layer part 6.The first conductor layer 4B, the second conductor layer 4C and the 4th conductor layer 4D are electrically connected by the through hole 34 that fills up plating Cu part via middle pad 12 on stacking direction.In addition, on second first type surface, one side (the downside first type surface that shows among the figure) of core board part 2, go up and form second side and pile up wiring layer part 7 thereby rear side the 3rd conductor layer 4a, polymeric dielectric layer 3a and the rear side first conductor layer 4b that comprises rear side surface metal terminal pad 10 ' are stacked on the first via layer 3y in this order.Rear side surface metal terminal pad 10 ' as the rear side pad to come connecting wiring plate 1 self and motherboard etc. by Pin-Grid Array (PGA) or ball grid array (BGA).

[0047] three kinds of guiding paths are arranged, each all comprises and is used for through hole 34, middle pad 12 and the via conductors 30 of splicing ear pad 10 and rear side surface terminal pad 10 ', i.e. signal guided path SL, current source tramsmit path PL and earth-continuity path GL.In addition, the via conductors 30 among the signal guided path SL insulate by clearance for insulation part 40i, 41i mutually with bus plane 41 and ground plane 40.In addition, the via conductors 30 among the current source tramsmit path PL insulate with ground plane 40 mutually by clearance for insulation part 40i, and the via conductors 30 among the GL of earth-continuity path insulate with bus plane 41 mutually by clearance for insulation part 41i.

[0048] as mentioned above, wiring plate 1 at least one first type surface of core board part 2, formed wherein piled up dielectric layer and conductor layer pile up wiring layer part 6, and pile up wiring layer part 6 and comprise and pile up composite bed part 8 that wherein polymeric dielectric layer 3A, conductor layer 4B and ceramic dielectric layer 5 (be the notion that comprises barbed portion 16: the ceramic layer that removes barbed portion 16 is shown in symbol 15) pile up in this order so that contact each other.

[0049] in order to make this wiring plate 1, a kind of Wiring board manufacturing method of the present invention has following key character.

(1) ceramic dielectric layer 5 and conductor layer 4B are formed on the first type surface of transfer base substrate 50 in this order to form the first stack layer assembly 60 (the first stack layer assembly manufacturing step: step 1 to 9, shown in Figure 4 and 5).

(2) polymeric dielectric layer 3A be formed on the first type surface of core board part 2 with make the second stack layer assembly 70 (the second stack layer assembly manufacturing step: step 10 and 11, as shown in Figure 6).

The polymeric dielectric layer 3A of the conductor layer 4B of (3) first stack layer assemblies 60 and the second stack layer assembly 70 bonds to together (bonding step: step 12 and 13, shown in Fig. 7 to 9).

(4) transfer base substrate 50 is removed (transfer base substrate removes step: step 14 and 15 as shown in figure 10) from ceramic dielectric layer 5

(5) by the first stack layer assembly 60 and the second stack layer assembly 70 are bonded to the separate unit (encapsulation) (shown in Figure 14 A and 14B) that the structure (panel) that obtains together is cut into wiring plate 1.

[0050] by Wiring board manufacturing method of the present invention, making the first stack layer assembly 60 makes by following steps: ceramic dielectric layer 5 and conductor layer 4B are formed in this order on the first type surface of transfer base substrate 50 to make the first stack layer assembly 60, then it is stacked on the second stack layer assembly 70 on the first type surface that polymeric dielectric layer 3A wherein be formed and sticked at core board part 2, and after removing transfer base substrate 50, is cut into the separate unit 70u of wiring plate 1.Just, the reinforcement of thin and crisp ceramic dielectric layer 5 by transfer base substrate 50 just can offer bonding step and not need the coverlet reason of staying alone, therefore can greatly improve manufacturing efficient and rate of finished products, pile up in the composite bed polymeric dielectric layer 3A, conductor layer 4B and ceramic dielectric layer 5 and pile up by said sequence with the wiring plate 1 that piles up composite bed part 8.

[0051] in bonding step, shown in Fig. 7 to 9, by inserting alignment pin 90 respectively in the guide through hole 50h, the 70h that are formed in the first stack layer assembly 60 and the second stack layer assembly 70, the first stack layer assembly 60 and the second stack layer assembly 70 just can be bonded to together and locate each other simultaneously.By like this, can effectively prevent in the ceramic dielectric layer 5 on the first stack layer assembly, 60 1 sides and conductor layer 4B that is stacked with it and the pattern deviation between the polymeric dielectric layer 3A on the second stack layer assembly, 70 1 sides.The transfer base substrate 50 that uses in this programme waits formation guide through hole 50h by boring control, as shown in Figure 2.

[0052] can use fusing point to be higher than to form the metal substrate 50 of sintering temperature of pottery of ceramic dielectric layer 5 as transfer base substrate 50.In this example, carrying out the above-mentioned first stack layer assembly manufacturing step comprises: the living ceramic layer of not sintering that forms the living ceramic layer 15g of not sintering that is made by the not agglomerated material of ceramic dielectric layer 5 forms step (step 1 to 3 among Fig. 4); With will be not sintering give birth to sintering step (the step 4) in Fig. 5 of ceramic layer 15g with metal substrate 50 sintering.

[0053] it is important that for improving dielectric constant (especially for the strong dielectric pottery) ceramic dielectric layer 5 forms crystallizing layer, can effectively utilize sintered ceramic like this.By using fusing point to be higher than the metal substrate 50 of sintering temperature of the pottery of forming ceramic dielectric layer 5 as transfer base substrate, in that being given birth to, sintering not transfer base substrate 50 can be used for operation when ceramic layer 15g carries out sintering, and can not cause any problem by transfer base substrate 50 is had with the such thermal history of ceramic dielectric layer 5 sintering, can handle living ceramic layer easily like this.

[0054] in addition, ceramic dielectric layer 5 can be by forming such as vapor deposition methods such as sputtering methods or such as the such chemical solution precipitation method of sol-gel process.Yet,, importantly produce film and heat platy substrate simultaneously to quicken crystallization, and if the employing chemical solution precipitation method are importantly quickened the crystallization of film by dried sintering process if adopt the vapor deposition method.

[0055] for example is used for the ceramic dielectric layer 5 of electric capacity, in order to improve its static capacity, the mixed oxide that suitable employing has a perovskite type crystal structure is such as by one or more potteries that constitute in barium titanate, strontium titanates and the lead titanates, because they have extra high dielectric constant and relatively easy the manufacturing.In this example, can use Fe base or Ni Base Metal plate and have metallic plates such as dystectic Mo base, W base, Ta base as said metal substrates 50.

[0056] the living ceramic layer 15g of sintering can not be the ceramic green substrate 15g that ceramic powder is mixed and forms sheet shape with polymeric adhesive (being called binding agent).This thin ceramic green substrate 15g waits by scraper technology easily and makes and handle easily, because it has very big flexibility.For example, the thickness of the ceramic dielectric layer 5 that forms of sintering at 1 μ m in the scope of 100 μ m.Ceramic dielectric layer 5 is made of more than or equal to 10 high-dielectric ceramic dielectric constant.

[0057] ceramic dielectric layer 5 need be shaped as suitable shape being used for forming through hole described later, and is used for capacitance adjustment of electric capacity etc.Yet ceramic dielectric is not easy by chem-mill because it is chemically stable, and since its high-melting-point when being in the state of densification by sintering, also be difficult to by patternings such as laser.Yet, can finish above-mentioned patterning easily by making with the following method.Just, ceramic green substrate 15g is bonded on the metal substrate 50, then ceramic green substrate 15g is formed the shape (step 2) that ceramic dielectric layer 15 will obtain, and after carry out the sintering step (step 4) among Fig. 5.Be aggregated under the bonding state of thing binding material because ceramic green substrate 15g is in ceramic powders, the nonuseable part of substrate can be by the laser irradiation easy removal.In addition, the dry ceramic layer of not sintering that is obtained by sol-gel process by the sintering similar approach that forms ceramic dielectric layer 5 can obtain same effect.

[0058] as shown in Figure 3, ceramic green substrate 15g can be formed on the carrier sheet of being made by polymer (such as the pet resin thin slice) 51.This makes ceramic green substrate 15g to be made by high efficiency by scraping skill in using a kitchen knife in cookery etc.Particularly, form slurries by hybrid ceramic powder, polymeric adhesive, dispersant, plasticizer, solvent or the like, then it being applied on the carrier sheet 51 and drying is ceramic green substrate 15g.

[0059] by apply slurries when launching the carrier sheet 51 of reeling, substrate 15g forms the long and narrow ceramic green substrate 52 with carrier sheet.From when substrate is made, such as applying the viewpoint that slurries and when oven dry obtain intensity, and from the viewpoint of the separating power of ceramic green substrate 15g, carrier sheet 51 is preferably made by pet resin.

[0060] if be used to form the electric capacity with high-capacitance, the thickness of the ceramic dielectric layer that obtains by sintering preferably is adjusted to 1 μ m in the scope of 100 μ m.Thereby, the thickness that is used for the ceramic green substrate 15g of the ceramic dielectric layer that forms by sintering need be adjusted so that can obtain behind the sintering above-mentioned thickness (such as from 2 μ m to 200 μ m).On the other hand, have the ceramic green substrate 52 of carrier sheet, when being used to form plate (stack assemblies), need be cut into suitable size before use.If it is above-mentioned so little that the thickness of ceramic green substrate 15g is adjusted to, Qie Ge precision has problem so, such as producing slight crack in the place near cutting blade probably.For fear of this defective, the thickness of the carrier sheet of being made by pet resin 51 need be set at more than or equal to 20 μ m.In addition, although the thickness of carrier sheet 51 does not have the upper limit, if thickness is equal to or less than the suitable flexibility that 100 μ m can obtain being convenient to reel etc.

[0061] the ceramic green substrate 52 that has carrier sheet after cutting waits by punching and has formed guide through hole 52h.In addition as shown in Figure 2, metal substrate 50 also forms guide through hole 50h in the relevant position.Guide through hole 50h can form (if particularly the thickness of metal substrate is less than or equal to 100 μ m (considering processing, more than or equal to 20 μ m)) easily by chemical etching.Particularly, guide through hole forms in the following manner: cover the first type surface of metal substrate 50 with resist, form the etch window identical with the guide through hole shape in resist, and the metal substrate that will have a resist soaks with etching solution.Same etching solution (can describe in the back) also can be used to remove metal substrate 50.

[0062] like this, shown in step 1 among Fig. 4, ceramic green substrate 15g by an integrated opposite side at gluing of surfaces is bonded on the metal substrate 50 with carrier sheet 51, then shown in step 2 the ceramic green substrate 15g under this state with carrier sheet 51 by laser patterning, and after shown in step 3 carrier sheet be removed so that can carry out sintering step.When ceramic green substrate 15g with carrier sheet 51 time by laser patterning because 51 protections of the peripheral region suppressed by vector thin slice of pattered region, the dispersion thing of the ceramic green substrate 15g that burns and scatter can be removed with carrier sheet 51; Also have such advantage in addition, promptly on the ceramic green substrate 15g behind the patterning, be difficult to cause because the pollution that disperses thing to cause.

[0063] if adopts not sintering to give birth to the technology of ceramic layer 15g with metal substrate 50 sintering, shown in step 11 among Fig. 6, the second stack layer assembly 70 and a plurality of unit 70u quilt cover that will make wiring plate interior integrated (part of the second stack layer assembly 70 of the part of the individual unit of composition wiring plate particularly) that comprise core board part 2.Shown in the step 10 among Fig. 6, the second stack layer assembly 70 forms polymeric dielectric layer 3A, 3a and further forms guide through hole 70h on two first type surfaces of preprepared core board part 2, as shown in step 11.Guide through hole 70h is formed on corresponding four angles of each unit 70u.

[0064] in bonding step, as shown in Figure 7, efficient ways is to adopt the step of arranging and placing a plurality of first stack layer assemblies 60 on the second stack layer assembly 70, each of a plurality of first stack layer assemblies 60 all comprises unit 70u (particularly, the part of the first stack layer assembly 60 of the part of the individual unit of composition wiring plate), its quantity is less than those unit of the second stack layer assembly 70 (part of the second stack layer assembly 70 of the part of the individual unit of composition wiring plate particularly).The living substrate 15g of non-sintered ceramic can cause contraction because of sintering, so might work as when using large-area metal substrate 50, because the influence of contraction makes the bending of the resulting first stack layer assembly 60 bigger.Yet, by for the second stack layer assembly, 70 a plurality of first stack layer assemblies 60 placed apart, all forming as a whole situation with the first stack layer assembly 60 and compare, it is littler that the bending in the time of can making sintering keeps.In this example, as shown in Figure 8, thereby by alignment pin 90 is inserted the guide through hole 60h neutralization that is formed on the first stack layer assembly, 60 corresponding four angles be formed among the guide through hole 70h on the second stack layer assembly, 70 sides for the second stack layer assembly, 70 location separately the first stack layer assembly 60 and they are bonded to together, so just can improve the positioning accuracy of the relative second stack layer assembly 70 first stack layer assembly 60 separately.

[0065] remove step at transfer base substrate, metal substrate 50 can be removed by chemical etching.By this method, just can remove metal substrate 50 and will be limited in minimum degree for the mechanical damage of thin ceramic dielectric layer 5 simultaneously.If use the metal substrate of making by Fe base or Ni Base Metal 50, just can use etchant such as iron chloride (III) solution, stannous chloride (II) solution and all example hydrochloric acids of acid solution.In addition, metal substrate 50 can be by the overall chemical etching, if perhaps use the metal substrate of making by Fe base or Ni Base Metal 50, Metal Substrate metal 50 can comprise body layer and have the separating layer of higher Fe content than body layer, and separating layer is etched to separate and therefore can reduce the etching total amount of parent metal from body layer like this.

[0066] gets back to Fig. 1, wiring plate 1 has the composite bed of piling up part 8, wherein conductor layer 4B is cut to obtain ceramic side cutting part 16 by part to obtain conductor side cutting part 18 and ceramic dielectric layer 5 direction in face by the part cutting on the direction in face, pottery side cutting part 16 and conductor side cutting part 18 are connected and are communicated with cutting part 21 to form, and the polymer that constitutes polymeric dielectric layer 3A is received in and is communicated with cutting part 21 to extend to ceramic side cutting part 16 by conductor side cutting part 18.

[0067] utilizes the structure of above-mentioned wiring plate 1 of the present invention, in piling up composite bed part 8, polymeric dielectric layer 3A, conductor layer 4B and ceramic dielectric layer 5 are stacked so that contact each other from core board part 2 one sides in this order, the polymer that constitutes polymeric dielectric layer 3A is received in the connection cutting part 21 that is formed in conductor layer 4B and the ceramic dielectric layer 5, and makes by the grappling effect therefore that adhesion between the layer is stronger to be difficult to cause such as problems such as peeling off when the reflow soldering process etc.

[0068] obtains said structure by carrying out the following first stack layer assembly manufacturing step.

(1-1) patterning pottery side cutting part 16 (ceramic side cutting part patterning step: step 3) among Fig. 4 among the ceramic dielectric layer 15g that on a first type surface of transfer base substrate 50, forms.

(conductor layer forms step: step 5) among Fig. 5 (1-2) to form conductor layer 54 (can become conductor layer 4B after it) on the ceramic dielectric layer 15 after patterning.

(1-3) in conductor layer 4B patterned conductor side cutting part 18 to be used for being communicated with ceramic side cutting part 16 (conductor side cutting part patterning step: step 6 to 9).

[0069] in Fig. 5, as shown in step 5, conductor layer 54 forms the whole transfer base substrate 50 of parcel and the plating Cu layer of the sintered ceramic dielectric layer 15 of patterning.In step 6, formed photoresists layer 55, and resist layer is exposed and develops with pattern etched window 55p in step 7.As shown in step 8, after using resist layer 55 etched conductors layers 54, resist layer 55 is removed, as shown in step 9.

[0070] in addition, coming the step of pattern etched window 55p (in the step 7) among Fig. 5 by exposure and development, etch window 55p is patterned as shown in Figure 14 A and 14B, consider cutter width and error thereof in the external dimensions of unit (encapsulation) 70u of the wiring plate 1 that will make and the cutting step carried out afterwards, with the outside end face of first electrode 20 from the end face retraction (inwardly) at least the second of unit (encapsulation) 70u of wiring plate 1 width W that bounces back _E(＞W _BT).The second retraction width W _EPreferably in 0.8mm arrives the scope of 2.5mm, such as being made as 1.0mm.If the second retraction width W _ELess than 0.8mm, sinking of first electrode 20 just may be taken place and cause short circuit.In addition, if second the retraction width greater than 2.5mm, with regard to the area that makes the electrode 20 of winning become and do not expect little.As for second electrode 11, its second retraction width W _EAlso adopt similar setting.By having determined the second retraction width W like this _EValue, except the outside end face of the ceramic dielectric layer 15 of forming electric capacity from encapsulation end face (to inside) retraction, the outside end face of first electrode 20 and second electrode 11 is also from the outside end face (to inside) of ceramic dielectric layer 15 retraction, so just can prevent from that electric capacity is exposed to encapsulate end face to guarantee to prevent the short circuit between the layer.

[0071] shown in Fig. 7 and 8, in bonding step, on the first type surface of the first stack layer assembly 60 of the connection cutting part 21 that has formed the conductor side cutting part 18 that has ceramic side cutting part 16 and be connected, piled up the second stack layer assembly 70 with ceramic side cutting part; The described second stack layer assembly 70 has polymeric dielectric layer 3A, and this polymeric dielectric layer 3A is in semi-solid preparation or solid state; Described first type surface is positioned on opening one side that is communicated with cutting part 21.Here, upper base 80 (having guide through hole 80h), the accessory plate of making by stainless steel etc. 81 (having guide through hole 81h), separation membrane 82 (having guide through hole 82h), formed the distance piece 83 of the holding portion 83w that is respectively applied for each first stack layer assembly 60, the first stack layer assembly 60, the second stack layer assembly 70, separation membrane 84 (having guide through hole 84h), the accessory plate of making by stainless steel etc. 85 (having via 85h), bottom matrix 86 (have alignment pin and keep through hole 86h, be used to keep the terminal bottom of alignment pin 90), pad 87, and loading plate 88 piles up in this order from top to bottom.

[0072] as shown in Figure 9, by using a kind of known (not shown)s such as hydraulic press that above-mentioned stack assemblies is pressed onto together.By compressing first stack assemblies 60 and second stack assemblies 70 on stacking direction, form the semi-solid preparation of polymeric dielectric layer 3A or the polymer of solid state and will guarantee to be communicated with in the cutting part 21, thereby can obtain the wiring plate 1 of said structure easily by bonding being received under the pressure.

[0073] in pressurization when transferring to a plurality of first stack layer assemblies 60 on the second stack layer assembly 70, by placing at white space, just can pressurize and do not cause the step and unnecessary the flowing of polymer of any horizontal plane by the distance piece made from the metallic plate of the first stack layer assembly, 60 same thickness 83.Such as, because the thickness of the first stack layer assembly 60 (is preferably 0.235mm to 0.360mm) at 0.1mm in the scope of 1mm when shifting pressurization, so the thickness of metallic plate (such as corrosion resistant plate) (is preferably 0.235mm to 0.360mm) at 0.1mm in the scope of 1mm.

[0074] gets back to Fig. 1, when being contained in the conductor layer 4B that piles up in the composite bed part 8 when being called as the first conductor layer 4B, in wiring plate 1, has the second conductor layer 4C on the opposite side that is stacked on ceramic dielectric layer 5 with the first conductor layer 4B, like this, the first conductor layer 4B, ceramic dielectric layer 5 and the second conductor layer 4C have just formed electric capacity.In the first conductor layer 4B, form first electrode 20 of electric capacity and in the second conductor layer 4C, form second electrode 11.In first electrode 20 and second electrode 11 one is connected to current source tramsmit path PL and another is connected to earth-continuity path GL.In addition, the cutting part of path by being formed for through hole 34 etc., first electrode 20 and second electrode 11 are separated and face inner projection overlapping area is very little on the direction in face like that as shown in the figure, but they in fact in face on the direction in the overlapping area that has formed continuous thin layer and plane projection in the localities of non-cutting part much larger than shown in the sectional view.This is the same with ceramic dielectric layer 5.By this structure, just decoupling capacitor can be installed in and comprise the piling up in the wiring layer part 6 of polymeric dielectric layer (built-in layer), so just the intermediate plate that does not need electric capacity will wherein be housed in addition is installed between wiring plate and the electronic component (not shown), therefore can reduce component height.In this case, need be after transfer base substrate removes step and finishes removing of ceramic dielectric layer 5 form the second conductor layer 4C on the first type surface of transfer base substrate 50 1 sides.

[0075] utilize the first conductor layer 4B, ceramic dielectric layer 5 and the second conductor layer 4C to form the structure of electric capacity, on an opposite side of ceramic side polymer filling part 17 bonding conductor side cutting parts 18, place the conductive pattern (second electrode) 11 of forming second a conductor layer 4C part, contact with the ceramic side polymer filling part 17 of filling ceramic side cutting part 16 to be communicated with cutting part 21 places at least one.Border surface between conductive pattern 11 and the ceramic side polymer filling part 17 maintains an equal level mutually with the second conductor layer 4C side master meter plane of ceramic dielectric layer 5.By like this, improved the flatness on the second conductor layer 4C side master meter plane of ceramic dielectric layer 5, and help piling up the flatness on the surface of wiring layer part 6, can improve like this such as the coplanarity that is used to be connected to form at the pad 12 of the electronic device that piles up wiring layer part 6 outermost surfaces part.

[0076] above-mentioned structure can form by the following method easily, promptly in bonding step in being communicated with cutting part pressurization insert polymer and cure polymer, thereby form ceramic side polymer filling part 17 so that its first type surface one side of transfer base substrate 50 and ceramic dielectric layer 5 fair (among Figure 10 step 14) and after carry out transfer base substrate and remove step (step 15).

[0077] gets back to Fig. 1, wiring plate 1 has formed the 3rd conductor layer 4A, it contacts polymeric dielectric layer 3A on the opposite side of the first conductor layer 4B, constitute the conductive pattern 11 of the second conductor layer 4C and the 3rd conductor layer 4A by penetrating ceramic dielectric layer 5 successively, the through hole 34 of the first conductor layer 4B and polymeric dielectric layer 3A is electrically connected, the first conductor layer 4B and through hole 34 are insulated from each other by the polymer of filling conductor side cutting part 18, are used for being formed in the ceramic side polymer filling part 17 of filling ceramic side cutting part 16 at the perforation 34h that ceramic side cutting part 16 forms through hole.Use this structure, the ceramic dielectric layer 5 that has insulation function in essence is not directly to be formed for the perforation of through hole but the ceramic side polymer filling part 17 that is positioned over wherein forms perforation, and the advantage of doing like this is to obtain the 34h that bores a hole easily.Particularly, as shown in step 15 and step 16 among Figure 10, ceramic side polymer filling part 17 forms perforation 34h by laser LB (laser processing) from removing a side first type surface that exposes behind the transfer base substrate 50 easily.Laser LB is CO ₂Laser, YAG laser or excimer laser.Can adopt by photoetching technique and form the method for perforation 34h rather than form the method for perforation 34h by laser processing.

[0078] in addition, in wiring plate 1, cut the second conductor layer 4C by direction top in face and form the second conductor side cutting part 18, to be used for being communicated with the part of cutting part 21.Be communicated with on this zone that is communicated with cutting part 21, the second conductor side polymer filling part 19S that fills the second conductor side cutting part 18 combines with the ceramic side polymer filling part 17 of filling ceramic side cutting part 16, extends on the main surface side top of ceramic dielectric layer 5 simultaneously.By like this, the front and back that can obtain the connection cutting part 21 of its inside are aggregated the structure that thing fuses, and by the second conductor side polymer filling part 19S that extends on the main surface side top of ceramic dielectric layer 5 from connection cutting part 21 edges, the marginal portion that is communicated with cutting part 21, comprise side surface, be embedded in the polymer.Like this, be difficult to cause peeling off of on the edge of ceramic dielectric layer 5 ceramic dielectric layer 5.This effect is significantly being strengthened when cutting part 21 and the second conductor side cutting part, 18 outer ledges along ceramic dielectric layer 5 are formed when being communicated with.

[0079] said structure can obtain by the following method easily: form the second conductor layer 4C after removing step finishing transfer base substrate; Form the second conductor side cutting part 18 with the part that be communicated with to be communicated with cutting part 21 (step 21) from the step 17 of Figure 11 to Figure 12; On the first type surface of the second conductor layer 4C that has formed conductor side cutting part 18, form and pile up another polymeric dielectric layer 3B (step 22); And the polymer that will form polymeric dielectric layer 3B is filled in the second conductor side cutting part 18 to combine with ceramic side polymer filling part 17.

[0080] in step 17, the surface, inside that covers the surface portion of exposure of ceramic side polymer filling part 17 and perforation 34h by electroless plating Cu layer 91 to be being used for the plating conduction, and further forms anti-plating layer 92 in step 18.In step 19, anti-plating layer 92 is exposed and develops and is equivalent to by the plating window 92p of plating part with formation.

[0081] in addition, in by the step of the exposure and the anti-plating layer 92 shaping plating window 92p that develop (step 19 of Figure 11), shown in Figure 14 A and 14B, consider cutter width and error thereof in the external dimensions of unit (encapsulation) 70u of the wiring plate 1 that will make and the cutting step carried out afterwards, patterning plating window 92p is so that the outside end face of second electrode 11 that forms in next step (step 20 of Figure 12) is from cutting the surface retraction at least the second retraction width W _E(＞W _BT).

[0082] in the step 20 of Figure 12, realizes filling the through hole filling plating of perforation 34h inside to form through hole 34 and middle pad 12 by plating by electrolysis plating Cu.In step 21, remove anti-plating layer 92, and do not form electrolysis plating Cu part and that part of electroless plating Cu layer that is exposed is removed the second conductor layer 4C that has the second conductor side cutting part 18 with formation by fast-etching.In step 22, form polymeric dielectric layer 3B afterwards.Then, in the step 23 of Figure 13, in polymeric dielectric layer 3B, formed perforation 34h, and in step 24, formed the through hole 34 and the terminal pad 10,10 ' of filling perforation 34h by plating.

[0083] last, the panel that obtains by step 24 is cut into independent encapsulation by cutting mechanics known or the unknown, and each all forms the unit 70u of wiring plate 1, shown in Figure 14 A and 14B.In this example, just as described, the outside end face that forms ceramic dielectric layer 15 makes from cutting the surface retraction the first retraction width W at least _BT(step 2 of Fig. 4 and 3), and the outside end face that forms first electrode 20 makes from cutting the surface retraction the second retraction width W at least _E(step 8 of Fig. 5, the step 20 of Figure 12), thus prevented that in advance ceramic dielectric layer 15, first electrode 20 and second electrode 11 are exposed to the encapsulation end face after cutting and oxide etch.In addition, so because the adhesion at interface is enhanced and can prevents in advance that interlayer that the shear stress by when cutting causes from peeling off with steam and invade forming of path between first electrode 20, second electrode 11 and the ceramic dielectric layer 15.In addition, can never cause first electrode 20 and the second electrode 11 sagging problem after cutting, and the short circuit between the layer can not take place yet.In addition, because compare the conductor (such as copper) of forming first electrode 20 and second electrode 11 with polymeric dielectric, load when particularly strong dielectric (such as barium titanate) has increased cutting has also quickened the wearing and tearing of blade and cracked, so also can prevent this problem in advance.

[0084] in addition, obviously as can be seen, 1 of wiring plate of the present invention piles up to have formed electric capacity on the wiring layer part 6 and piled up second first and does not form electric capacity on the wiring layer part 7 from Fig. 1.Although depend on the factors such as material of ceramic dielectric layer 5, still can pile up wiring layer part 6 and obtain required static capacity (such as more than or equal to 1 μ f) by first.If like this, piling up on the wiring layer part 7 second does not just need electric capacity.Yet in this structure, the second conductor layer quantity of piling up wiring layer part 7 is piled up lacking of wiring layer part 6 than first.Second piles up the thickness of wiring layer part 7 to pile up the thickness of wiring layer part 6 than first little in addition.As a result, caused the intensity imbalance of the upper and lower of core board part 2, reduced so be appreciated that opposing reliability crooked and that peel off.Consideration is formed for the surface conductor of bus plane or ground plane on the level of the electrode that is equivalent to electric capacity, but this structure is wasted very much.

[0085] therefore, according to the present invention, as Figure 15 A be used for shown in the 15B of comparison, begin from core board part 2 number pile up on the corresponding level of composite bed part 8 up to first side, second side is piled up wiring layer part 7 and has been used polymeric dielectric layer 33, and it is thicker than the polymeric dielectric layer 3A that piles up in the composite bed part 8.Suppose that it is D1 that first side is piled up the thickness that piles up polymeric dielectric layer 3A in the composite bed part 8 of wiring layer part 6, and second side to pile up the thickness of the polymeric dielectric layer 33 of wiring layer part 7 are D2, obtain concerning D2_2D1.Substantially determined the thickness of polymeric dielectric layer simultaneously by the thickness that is clipped in the part between the conductor layer.

[0086] the polymeric dielectric layer 33 with above-mentioned thickness D2 obtains by twice laminated film usually.Because the polymeric dielectric layer uses resin molding to be used for build-up process, no matter still be that its thickness of second side is all equal and made by same material, so just obtain concerning D2_2D1 in first side.The reason that Here it is polymeric dielectric layer 33 forms by a plurality of independent process.After this, can describe in detail and finish transfer base substrate and remove process after the step.Process from the step 1 of Fig. 4 to the step 15 (transfer base substrate removes step) of Figure 10 is used for forming in core board part 2 and piles up composite bed part 8 simultaneously, so that it piles up the part of wiring layer part 6 as first side.

[0087] after the transfer base substrate shown in the step 15 of Figure 10 removes step, technology forwards to and forms the step that constitutes the second conductor layer 4C of lateral electrode on the electric capacity.In this example, the processing in second side advances to placement base conductor layer 4a and polymeric dielectric layer 3a on core board part 2.Promptly forming second side piles up the process of wiring plate 7 and terminates in the described second stack layer assembly and form the step (step 11) of Fig. 6.

[0088] in order to form the second conductor layer 4C that forms capacitance electrode, carries out the step of boring perforation 34h, be used to form the via conductors 34 that is used for piling up the connection of composite bed part 8 interlayers.This step is used for forming perforation 34h from a side first type surface that removes transfer base substrate 50 back exposures by said laser processing in front or photoetching technique at ceramic side polymer filling part 16.In the step that forms through hole, the second side polymeric dielectric layer 3a exposes all the time.Thereby, if adopt photoetching technique, need to use masking tape to wait and cover the second side polymeric dielectric layer 3a, so that the polymeric dielectric layer can be not etched.Laser LB technology does not need this work, so the quantity of processing step will be still less.

[0089] as shown in step 16, the feasible polymer of filling conductor side cutting part 18 of the size (diameter) of perforation 34h is retained in perforation and forms between the conductive pattern of the first conductor layer 4B on the direction in face, pass the conductor of forming ceramic dielectric layer 5, the first conductor layer 4B and the polymeric dielectric layer 3A formation base conductor layer 4A bottom being exposed to that piles up composite bed part 8 from upper surface side in order simultaneously., just form the second conductor layer 4C (being connected to base conductor layer 4A) easily and make it separate to limit its diameter by formation perforation 34h like this with respect to the first conductor layer 4A direct current by through hole 34.The diameter of perforation 34h is equivalent to the suitable laser LB spot diameter of adjusted.

[0090] then, forward the step that forms electroless plating 91 to, it is as shown in the step 17 of Figure 11, but the chemical liquid that will be able to be corroded polymer before this step in the inside of perforation 34h cleans (surface decontamination treatment fluid).This is because because the spot (resin spot) that laser processing brings is formed at the bottom of perforation 34h.Can use such as alkaline permanganate solution as the surface decontamination treatment fluid.In addition, use the wet method of surface decontamination treatment fluid to can be used for removing the step of the bottom spot of perforation 34h.Consider productivity ratio in addition, be fit to adopt method in whole parts (wiring plate in the manufacturing) the immersion surface decontamination treatment fluid.

[0091] after the step of the bottom spot of removing perforation 34h, carry out flushing of cleaning step such as water and neutralization, the surface of workpiece (wiring plate in the manufacturing) be activated and after forward electroless plating Cu step to, shown in step 17.In electroless plating Cu step, electroless plating 91 is formed on the whole surface of parts.Because in the activation step and electroless plating Cu step that activate surface of the work, workpiece is immersed into and activates in solution and the electroless plating Cu solution, electroless plating Cu layer 91 also is formed at the surface of polymeric dielectric layer 3a, but this layer can pass through fast-etching (can after description) by easy removal.

[0092] electroless plating Cu layer 91 is to be used for carrying out the base conductor that is used to conduct electricity in the electrolysis plating Cu step in step 20.Electrolysis plating Cu step is to be used for the inner step that forms via conductors 34 and formation and the incorporate second conductor layer 4C of via conductors at perforation 34h.Electrolysis plating Cu step executive condition: form anti-plating layer 92 and make to have only the place that will form conductive pattern to be exposed.Be shown in bonding forming after the membranaceous dry film photoresist 92 as step 18, by forming anti-plating layer 92, as step 19 with photoetching technique patterning dry film photoresist 92.Anti-plating layer 92 is formed on the second side polymeric dielectric layer 3a and goes up to cover its whole surface.This is in order to prevent that polymeric dielectric layer 3a from touching electrolysis plating Cu solution.After the patterning of finishing anti-plating layer 92, carry out electrolysis plating Cu step as shown in Figure 12, and the second conductor layer 4C is stacked on the opposite side with the first conductor layer 4B of ceramic dielectric layer 5.Therefore finished the capacitance structure of forming by the first conductor layer 4B, ceramic dielectric layer 5 and the second conductor layer 4C.

[0093] in addition, in whole perforation 34h, insert plated conductor, but also can adopt the conformal hole that only forms plated conductor at perforation 34h inner surface with formation via conductors 34.In addition when in this programme, adopted the false add method (semi-additive method) of after having formed the base conductor that is used to conduct electricity, carrying out electrolysis plating Cu step, but the second conductor layer 4C with desired thickness can form also by electroless plating technology by electroless plating Cu step.

[0094] after capacitance structure is finished in a manner described, the anti-plating layer 92 on first and second sides is removed and electroless plating 92 also is removed by fast-etching, shown in step 21.After this, by adopting the build-up process that uses through hole formation and plating technology, carry out processing procedure up to forming the first side external connection terminals (terminal pad 10) and the second side external connection terminals (terminal pad 10 ').Particularly, polymeric dielectric layer 3B is formed on first side, the second dielectric layer 4C, and the second side polymeric dielectric layer 3a is different from the polymeric dielectric layer 3b covering of polymeric dielectric layer 3a.Because as shown in Figure 16, the second side polymeric dielectric layer 3a is because of the decontamination step rough surface that becomes, so form new polymeric dielectric layer 33 as mentioned above when forming perforation 34h.In view of the above, polymeric dielectric layer 3a and polymeric dielectric layer 3b are incorporated into the thick polymer dielectric layer 33 that has obtained having flat surface together.

[0095] supposes that perforation 34h is formed among the second side polymeric dielectric layer 3a and formation terminal pad 10 ' as shown in step 24 as shown in step 23.If like this,, polymeric dielectric layer 3a become very coarse so just being carried out twice its surface of surface decontamination processing.Therefore this means in first side differently, just caused following problem, promptly be difficult to form electrodeposited coating with equal equal thickness and characteristic with plating condition on second side.Than this, according to the present invention, on second side, newly formed polymeric dielectric layer 3b, as shown in the step 22 of Figure 12, so will never cause any this type of problem.Yet, because the first side polymeric dielectric layer 3B is different with the second side polymeric dielectric layer, 33 thickness, so need suitably be adjusted at the condition of laser irradiation when forming perforation.

[0096] in addition, by on second side, forming thick polymer dielectric layer 33, can reach the effect that increase by second side is piled up wiring layer part 7 intensity.If only for the purpose of improving surface condition; not cause the mode of rough surface problem, when carrying out the surface decontamination processing, protect the second side polymeric dielectric layer 3a or carry out the surface decontamination processing or carry out dry method decontamination processing just enough by only on first side, spraying the surface decontamination treatment fluid.Yet can't obtain increasing the effect that second side is piled up wiring layer part 7 intensity like this.Thereby, be more suitable for adopting the flow process of this programme.Certainly also have carrying out and protect the second side polymeric dielectric layer 3a when surface decontamination is handled or carry out surface decontamination and handle or carry out dry decontamination and handle in the reason that all has aspect the productivity ratio than the present invention difference by only on first side, spraying the surface decontamination treatment fluid.

[0097] in addition, also can make first side pile up the thickness equalization that wiring layer part 6 and second side are piled up wiring layer part 7.This can prevent the bending of wiring plate.In this example, when forming polymeric dielectric layer 33, can form the polymeric dielectric layer by polymeric dielectric layer 3b carried out repeatedly mould.In addition, if polymeric dielectric layer 33 is too thick, piles up in second side and can throw into question aspect the good formation of through hole 34 of wiring layer part 7.Therefore, can form two-layer or multiple layer polymer dielectric layer 33, each all includes only polymeric dielectric layer 3a and polymeric dielectric layer 3b, clips conductor layer simultaneously between them.In this example, after the conductor layer identical with base conductor layer 4a pattern is formed on the polymeric dielectric layer 33, further form polymeric dielectric layer (can be identical) similarly with polymeric dielectric layer 33 thickness with step 22.Then, similar with step 23, in this polymeric dielectric layer, form through hole 34 and can form through hole 34 and the terminal pad 10 ' of inserting perforation 34h by plating then.

[0098] in addition, except polymeric layer is pressed into membranaceous, form first side and the second side polymeric dielectric layer 3B and 3b can also by the coating and the oven dry liquid polymer form.And the former method is more suitable.As shown in Figure 1, when pile up composite bed part 8 when being formed on the core board part 2 employed guide through hole 70h be retained in the wiring plate 1 of the present invention, but the outside but be can't see, because two relative ends are aggregated thing dielectric layer 3B and 3b has been closed.So that guide through hole 70h fully is closed, be fit to adopt the method for laminated film shaped polymer in order to form polymeric dielectric layer 3B and 3b.Certainly more preferably design guide through hole 70h so that it is formed in the part abandoned around product section, guide through hole can not stayed in the final products like this, does not then need to consider the problems referred to above.

Claims (according to the modification of the 19th of treaty)

1. wiring plate, it is characterized in that: at least one first type surface of core board part, be formed with wherein piled up dielectric layer and conductor layer pile up the wiring layer part, the described wiring layer that piles up partly comprises wherein polymeric dielectric layer, conductor layer and ceramic dielectric layer pile up so that the contacted each other composite bed part of piling up from described core board part one side in this order, the described described conductor layer that piles up in the composite bed part is cut to obtain conductor side cutting part by part on the direction in face, described ceramic dielectric layer is cut to obtain ceramic side cutting part by part on the direction in face, described ceramic side cutting part and described conductor side cutting part are connected and are communicated with cutting part to form, and the polymer that constitutes the polymeric dielectric layer is received in described connection cutting part to extend to described ceramic side cutting part via described conductor side cutting part.

2. wiring plate according to claim 1, when will be when piling up the described conductor layer that comprises in the composite bed part and being called first conductor layer described, also comprise and be stacked on the described ceramic dielectric layer and the second conductor layer opposite side of described first conductor layer, wherein, described first conductor layer, described ceramic dielectric layer and described second conductor layer are formed electric capacity.

3. wiring plate according to claim 2, wherein, on an opposite side of a side that is connected with described conductor side cutting part with the polymer filling part of described ceramic side, the conductive pattern that is provided with a part of forming described second conductor layer contacts with the ceramic side polymer filling part with the described ceramic side cutting part of filling at least one described connection cutting part, and the border surface between described conductive pattern and the described ceramic side polymer filling part maintains an equal level mutually with the second conductor side first type surface of described ceramic dielectric layer.

4. wiring plate according to claim 3 wherein, is formed with the 3rd conductor layer, and it contacts with described polymeric dielectric layer on a side opposite with described first conductor layer; Described conductive pattern and described the 3rd conductor layer of forming described second conductor layer are electrically connected by the through hole that passes described ceramic dielectric layer, described first conductor layer and described polymeric dielectric layer successively; Described first conductor layer and described through hole are insulated from each other by the polymer of filling conductor side cutting part; Be used for being formed in the ceramic side polymer filling part of filling described ceramic side cutting part in the perforation that described ceramic side cutting part forms described through hole.

5. according to each described wiring plate of claim 2～4, wherein, in described second conductor layer,, formed the second conductor side cutting part of a part that is used for being communicated with described connection cutting part by the cutting of direction top in face; Be communicated with on this zone that is communicated with cutting part, the second conductor side polymer filling part of filling the described second conductor side cutting part combines with the ceramic side polymer filling part of filling described ceramic side cutting part, extends from being communicated with ground, cutting part marginal portion on first type surface one side of described ceramic dielectric layer simultaneously.

6. wiring plate according to claim 5, wherein, described connection cutting part and the described second conductor side cutting part form along described ceramic dielectric layer outer ledge.

7. wiring plate, it is characterized in that, comprise: polymeric dielectric layer wherein, conductor layer and pile up in this order so that the contacted each other composite bed part of piling up by the ceramic dielectric layer that the pottery of high-k is made, the described described conductor layer that piles up in the composite bed part is cut to obtain conductor side cutting part by part towards interior surface, described ceramic dielectric layer is cut to obtain ceramic side cutting part by part towards interior surface, described ceramic side cutting part and described conductor side cutting part are connected and are communicated with cutting part to form, the polymer that constitutes described polymeric dielectric layer is received in described connection cutting part to extend to described ceramic side cutting part via described conductor side cutting part, when the described described conductor layer that piles up in the composite bed part is called as first conductor layer and when being stacked on the conductor layer with the opposite side of described first conductor layer on the described ceramic dielectric layer and being called as second conductor layer, the outside end face of described ceramic dielectric layer is from the end face retraction at least the first retraction width of the unit of described wiring plate, the outside end face of described first conductor layer and second conductor layer is from second bigger than the first retraction width at least retraction width of the end face retraction of the unit of described wiring plate, and first conductor layer, the ceramic dielectric layer and second conductor layer have been formed electric capacity, in described second conductor layer, by direction top in face cutting, formed the second conductor side cutting part of a part that is used for being communicated with described connection cutting part; Be communicated with on this zone that is communicated with cutting part, the second conductor side polymer filling part of filling the described second conductor side cutting part combines with the ceramic side polymer filling part of filling described ceramic side cutting part, extends from being communicated with ground, cutting part marginal portion on first type surface one side of described ceramic dielectric layer simultaneously.

8. wiring plate according to claim 7, wherein, on the opposite side of a side that is connected with described conductor side cutting part with the polymer filling part of described ceramic side, the conductive pattern that is provided with a part of forming described second conductor layer contacts with the ceramic side polymer filling part with the described ceramic side cutting part of filling at least one described connection cutting part, and the border surface between described conductive pattern and the described ceramic side polymer filling part maintains an equal level mutually with the second conductor layer side first type surface of described ceramic dielectric layer.

9. wiring plate according to claim 8 wherein, is formed with the 3rd conductor layer, and it contacts with described polymeric dielectric layer on a side opposite with described first conductor layer; Described conductive pattern and described the 3rd conductor layer of forming described second conductor layer are electrically connected by the via conductors that passes described ceramic dielectric layer, described first conductor layer and described polymeric dielectric layer successively; Described first conductor layer and described via conductors are insulated from each other by the polymer of filling conductor side cutting part; Be used for being formed in the ceramic side polymer filling part of filling described ceramic side cutting part in the perforation that described ceramic side cutting part forms described through hole.

10. according to each described wiring plate of claim 7～9, wherein, the described second retraction width is in the scope of 0.8mm～2.5mm.

11. wiring plate according to claim 10, wherein, described connection cutting part and the described second conductor side cutting part form along described ceramic dielectric layer outer ledge.

12. wiring plate that is used for installing electronic unit thereon, it is characterized in that, be included in and wherein formed along the support matrices of the vertically extending conductor of thickness direction, described device pedestal on first side and second side, formed respectively separately piled up polymeric dielectric layer and conductor layer pile up the wiring layer part; The first side wiring layer part that only is arranged on described first side has formed the electric capacity that comprises the ceramic dielectric layer; The described first side wiring layer partly comprises and piles up the composite bed part, wherein polymeric dielectric layer, the conductor layer of an electrode that forms electric capacity and ceramic dielectric layer pile up from described support matrices in this order so that contact each other, and the conductor layer that constitutes another electrode of described electric capacity is formed to cover described ceramic dielectric layer; The second side wiring layer part that is positioned on described second side is equivalent to described first side and piles up on the level of composite bed part beginning number from described support matrices, comprises than the described thicker polymeric dielectric layer of described polymeric dielectric layer that comprises in the composite bed part that pile up.

13. method of making wiring plate, this wiring plate be included in be formed with at least one first type surface of core board part wherein piled up dielectric layer and conductor layer pile up the wiring layer part, this piles up wiring layer and partly comprises and pile up the composite bed part, polymeric dielectric layer wherein, conductor layer and ceramic dielectric layer are stacked from described core board part one side in this order so that contact each other, the method is characterized in that order carries out following steps: be formed in this order on the first type surface of transfer base substrate to make the first stack layer assembly manufacturing step of the first stack layer assembly by making described ceramic dielectric layer and described conductor layer; By described polymeric dielectric layer is formed on the described core board first type surface partly to make the second stack layer assembly manufacturing step of the second stack layer assembly; The bonding step that the conductor layer of the described first stack layer assembly is bonded to the polymeric dielectric layer of described second stack layer; And described transfer base substrate removed step from the transfer base substrate that described ceramic dielectric layer removes.

14. Wiring board manufacturing method according to claim 13, wherein, in described bonding step, by respectively alignment pin being inserted in the guide through hole be formed in the described first stack layer assembly and the second stack layer assembly, described first stack layer assembly and the described second stack layer assembly are bonded together and located mutually.

15. according to claim 13 or 14 described Wiring board manufacturing methods, wherein, use fusing point to be higher than the metal substrate of sintering temperature of the pottery that constitutes described ceramic dielectric layer as described transfer base substrate, the described first stack layer assembly manufacturing step comprises that not sintering that formation is made by the not agglomerated material of ceramic dielectric layer gives birth to that the not sintering of ceramic layer gives birth to that ceramic layer forms step and with the sintering step of described not sintering life ceramic layer with described metal substrate sintering.

16. Wiring board manufacturing method according to claim 15, wherein, the living ceramic layer of described not sintering is to form the ceramic green substrate that sheet forms by the ceramic powders that ceramic powders is mixed and will mix polymeric adhesive with polymeric adhesive mutually.

17. Wiring board manufacturing method according to claim 16, wherein, described ceramic green substrate is bonded on the described metal substrate, described then ceramic green substrate be patterned as the described ceramic dielectric layer that will obtain shape and after carry out sintering step.

18. Wiring board manufacturing method according to claim 17, wherein, described ceramic green substrate is formed on the carrier sheet of being made by polymer, the described ceramic green substrate that on the opposite side of gluing of surfaces, is combined into one with described carrier sheet be bonded on the described metal substrate and in this state with described carrier sheet by laser patterning, remove described carrier sheet afterwards and carry out sintering step.

19. according to each described Wiring board manufacturing method in the claim 15～18, wherein, in described bonding step, comprise that the described second stack layer assembly of described core board part has a plurality of interior integrated units of the described wiring plate of wanting manufactured, and a plurality of described first stack layer assemblies are arranged and are positioned on the described second stack layer assembly, and each contained element number of wherein said a plurality of described first stack layer assemblies is less than the contained element number of the described second stack layer assembly.

20. Wiring board manufacturing method according to claim 19, wherein, by alignment pin being inserted in the guide through hole and the corresponding guide through hole on the described second stack layer assembly, one side on corresponding four angles that are formed at the described first stack layer assembly, the described first stack layer assembly is bonded to it on described second stack layer assembly when being positioned with respect to the described second stack layer assembly.

21. each the described Wiring board manufacturing method according to claim 13～20 wherein, removes in the step at described transfer base substrate, described metal substrate is removed by chemical etching.

22. each described Wiring board manufacturing method according to claim 13 to 21, wherein, manufactured object is each described wiring plate of claim 1 to 6, wherein, the described first stack layer assembly manufacturing step comprises: in the described ceramic dielectric layer on being formed at a first type surface of described transfer base substrate with the ceramic side cutting part patterning step of described ceramic side cutting part patterning; The conductor layer that forms conductor layer on the described ceramic dielectric layer behind the patterning forms step; And in described conductor layer with described conductor side cutting part patterning to be used for being communicated with the conductor side cutting part patterning step of described conductor side cutting part and described ceramic side cutting part; And in described bonding step, under being in the state of uncured or semi-solid preparation, described polymeric dielectric layer piling up the described second stack layer assembly on the described first stack layer assembly of the described connection cutting part that has formed the described conductor side cutting part that comprises described ceramic side cutting part and be communicated with it, be stacked on first type surface on the first type surface of opening one side that is communicated with cutting part described polymeric dielectric layer, with this understanding, described first stack layer assembly and the described second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of described polymeric dielectric layer in the described connection cutting part and after with polymer cure.

23. Wiring board manufacturing method according to claim 22, wherein, manufactured object is each described wiring plate of claim 2～6, wherein, remove after step finishes at described transfer base substrate, on described second conductor layer has been formed at removing of the described ceramic dielectric layer first type surface of a side of described transfer base substrate.

24. Wiring board manufacturing method according to claim 23, wherein, manufactured object is the wiring plate described in claim 3 or 4, wherein, pressurization is inserted polymer and is solidified this polymer in described connection cutting part in described bonding step, first type surface by described transfer base substrate forms the ceramic side polymer filling part that maintains an equal level with described ceramic dielectric layer, carries out described transfer base substrate then and removes step.

25. Wiring board manufacturing method according to claim 24, wherein, manufactured object is the described wiring plate of claim 4, wherein, described ceramic side polymer filling part is removing the perforation that is formed for forming through hole on first type surface one side that exposes behind the described transfer base substrate by laser drill.

26. Wiring board manufacturing method according to claim 23, wherein, manufactured object is claim 5 or 6 described wiring plates, wherein, remove step at described transfer base substrate and form described second conductor layer after finishing, form the described second conductor side cutting part to be used for being communicated with the part of described connection cutting part, another polymeric dielectric layer is formed and is stacked on the first type surface of described second conductor layer that has formed the described second conductor side cutting part, and the polymer that constitutes described polymeric dielectric layer is received in the described second conductor side cutting part so that described polymeric dielectric layer and described ceramic side polymer filling part are combined.

27. method of making wiring plate, this wiring plate has wherein polymeric dielectric layer, conductor layer and is stacked in this order so that the contacted each other composite bed part of piling up by the ceramic dielectric layer that the pottery of high-k is made, and the method is characterized in that order carries out following steps: described ceramic dielectric layer and described conductor layer are formed on the first type surface of transfer base substrate in this order to make the first stack layer assembly manufacturing step of the first stack layer assembly; Make the second stack layer assembly manufacturing step of the second stack layer assembly with the polymeric dielectric layer; Bonding step, be used for the conductor layer of the described first stack layer assembly and the polymeric dielectric layer of the described second stack layer assembly are bonded together, so that the conductor layer in will piling up the composite bed part is called first conductor layer and will be stacked on the ceramic dielectric layer, when the conductor layer on the opposite side with described first conductor layer is called second conductor layer, the outside end face that the makes described ceramic dielectric layer first retraction width that bounces back at least from the end face of the unit of described wiring plate, and the outside end face that makes described first conductor layer and described second conductor layer retraction second retraction width bigger than the first retraction width at least from the end face of the unit of described wiring plate, by described first conductor layer, described ceramic dielectric layer and described second conductor layer are formed electric capacity; And described transfer base substrate removed step from the transfer base substrate that described ceramic dielectric layer removes.

28. Wiring board manufacturing method according to claim 27, wherein, in described bonding step, comprise that the described second stack layer assembly of described core board part has a plurality of interior integrated units of the described wiring plate of wanting manufactured, and a plurality of described first stack layer assemblies are arranged and are positioned on the described second stack layer assembly, and each contained element number of wherein said a plurality of described first stack layer assemblies is less than the contained element number of the described second stack layer assembly.

29. according to claim 27 or 28 described Wiring board manufacturing methods, wherein, in described bonding step, by respectively alignment pin being inserted in the guide through hole be formed in the described first stack layer assembly and the second stack layer assembly, described first stack layer assembly and the described second stack layer assembly are bonded together and located mutually.

30. a kind of Wiring board manufacturing method according to claim 29, wherein, in the corresponding guide through hole of alignment pin being inserted the guide through hole be formed in the described first stack layer assembly and the second stack layer assembly, the described first stack layer assembly is bonded to it on described second stack layer assembly when being positioned with respect to the described second stack layer assembly.

31 each described Wiring board manufacturing methods according to claim 27～30, wherein, in described bonding step, a plurality of described first stack layer assemblies are placed in the holding portion that is formed in the distance piece, and the conductor layer of described a plurality of first stack layer assemblies is bonded to mutually with the polymeric dielectric layer of the described second stack layer assembly.

32 Wiring board manufacturing methods according to claim 31, wherein, described distance piece is made by the metallic plate identical with described a plurality of first stack layer component thickness.

33. each described Wiring board manufacturing method according to claim 27～31, wherein, the described first stack layer assembly manufacturing step comprises: in the described ceramic dielectric layer on being formed at a first type surface of described transfer base substrate with the ceramic side cutting part patterning step of described ceramic side cutting part patterning; The conductor layer that forms conductor layer on the described ceramic dielectric layer behind the patterning forms step; And in described conductor layer with described conductor side cutting part patterning to be used for being communicated with the conductor side cutting part patterning step of described conductor side cutting part and described ceramic side cutting part; And in described bonding step, under being in the state of uncured or semi-solid preparation, described polymeric dielectric layer piling up the described second stack layer assembly on the described first stack layer assembly of the described connection cutting part that has formed the described conductor side cutting part that comprises described ceramic side cutting part and be communicated with it, be stacked on first type surface on the first type surface of opening one side that is communicated with cutting part described polymeric dielectric layer, with this understanding, described first stack layer assembly and the described second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of described polymeric dielectric layer in the described connection cutting part and after with polymer cure.

34. Wiring board manufacturing method according to claim 33, wherein, pressurization is inserted polymer and is solidified this polymer in described connection cutting part in described bonding step, first type surface by described transfer base substrate forms the ceramic side polymer filling part that maintains an equal level with described ceramic dielectric layer, carries out described transfer base substrate then and removes step.

35. method of making wiring plate, this wiring plate comprises wherein polymeric dielectric layer, conductor layer and is stacked in this order so that the contacted each other composite bed part of piling up by the ceramic dielectric layer that the pottery of high-k is made, and the method is characterized in that order carries out following steps: described ceramic dielectric layer and described conductor layer are formed on the first type surface of transfer base substrate in this order to make the first stack layer assembly manufacturing step of the first stack layer assembly; With the described first stack layer components apart be manufactured on the second stack layer assembly manufacturing step of the second stack layer assembly that has the polymeric dielectric layer on gluing of surfaces one side; The polymeric dielectric layer of the conductor layer of the described first stack layer assembly and described second stack layer is bonded to together bonding step; And described transfer base substrate removed step from the transfer base substrate that described ceramic dielectric layer removes.

36. Wiring board manufacturing method according to claim 35, wherein, in described bonding step, by respectively alignment pin being inserted in the guide through hole that is formed in the described first stack layer assembly and the second stack layer assembly, a plurality of described first stack layer assemblies are bonded to it on described second stack layer assembly when being positioned with respect to the described second stack layer assembly.

37. according to the Wiring board manufacturing method described in claim 35 or 36, wherein, use the metal substrate of sintering temperature that fusing point is higher than the pottery that constitutes described ceramic dielectric layer as described transfer base substrate, the described first stack layer assembly manufacturing step comprises that not sintering that formation is made by the not agglomerated material of described ceramic dielectric layer gives birth to that the not sintering of ceramic layer gives birth to that ceramic layer forms step and with the sintering step of the living ceramic layer of described not sintering with described metal substrate sintering.

38. according to the described Wiring board manufacturing method of claim 37, wherein, by respectively alignment pin being inserted in the guide through hole that is formed in the described first stack layer assembly and the second stack layer assembly, located mutually when a plurality of described first stack layer assemblies and the described second stack layer assembly are bonded together, described guide through hole is formed in the described metal substrate by chemical etching.

39. according to the Wiring board manufacturing method described in claim 37 or 38, wherein, the living ceramic layer of described not sintering is to form the ceramic green substrate that sheet forms by the ceramic powders that ceramic powders is mixed and will mix polymeric adhesive with polymeric adhesive mutually.

40. according to the described Wiring board manufacturing method of claim 39, wherein, described ceramic green substrate is bonded on the described metal substrate, described then ceramic green substrate be patterned as the described ceramic dielectric layer that will obtain shape and after carry out sintering step.

41. according to the described Wiring board manufacturing method of claim 40, wherein, described ceramic green substrate is formed on the carrier sheet of being made by polymer, the described ceramic green substrate that on the opposite side of gluing of surfaces, is combined into one with described carrier sheet be bonded on the described metal substrate and in this state with described carrier sheet by laser patterning, remove described carrier sheet afterwards and carry out sintering step.

42. according to the described Wiring board manufacturing method of claim 41, wherein, the thickness of adjusting described ceramic green substrate makes that the thickness range of the described ceramic dielectric layer that obtains by sintering is that 1 μ m is to 100 μ m.

43. according to the described Wiring board manufacturing method of claim 42, wherein, the used thickness scope is 20 μ m to the pet resin thin slice of 100 μ m as described carrier sheet.

44. each the described Wiring board manufacturing method according to claim 35～43 wherein, removes in the step at described transfer base substrate, described metal substrate is removed by chemical etching.

45., wherein, in described adhesion step, make described first stack layer assembly and the described second stack layer assembly be bonded to together by pressurization on stacking direction according to each described Wiring board manufacturing method of claim 35 to 44.

46. method of making electric capacity internally-arranged type wiring plate, this wiring plate has and has wherein formed along the support matrices of the vertically extending conductor of thickness direction, this support matrices on first side and second side, formed respectively piled up polymeric dielectric layer and conductor layer pile up the wiring layer part, the first side wiring layer part that only is arranged on first side has formed the electric capacity that comprises the ceramic dielectric layer, it is characterized in that comprising: constituted partly with the described composite bed that piles up that first side is piled up the part of wiring layer part and the mode that is formed on the described support matrices forms described step of piling up the composite bed part, wherein polymeric dielectric layer, the conductor and the ceramic dielectric layer that are used as an electrode of electric capacity are stacked so that contact each other from described support matrices one side in this order; On described support matrices, form the polymeric dielectric layer and form the polymeric dielectric layer, pile up wiring layer step partly with second side that formation is positioned on second side so that it is included in described pointing out in the base; Form the step of perforation, this perforation is used for being exposed under the situation on described second side to pile up in the composite bed part in described first side at described polymeric dielectric layer being formed for the via conductors that interlayer connects; Under described polymeric dielectric layer is exposed to situation on second side, use the chemical liquid of corrosion strength to clean the inner step of described perforation that is formed on described first side with corrosion polymer; And on the inner surface of described perforation, form conductor to constitute via conductors thus, in the time will being included in the described conductor layer that piles up in the composite bed part and being called first conductor layer, on an opposite side with described first conductor layer of described ceramic dielectric layer, pile up second conductor layer and the step by described first conductor layer, ceramic dielectric layer and second conductor layer formation electric capacity thus; And use another polymeric dielectric layer covering surfaces by the chemicals roughening the described second side polymeric dielectric layer and the step that new and old polymeric dielectric layer is connected together.

47. according to the described Wiring board manufacturing method of claim 46, wherein, the step that another polymeric dielectric layer of described use covers described polymeric dielectric layer is the step of laminated polymeric thing film or the step that applies liquid polymer.

48. according to claim 46 or 47 described Wiring board manufacturing methods, wherein, undertaken by carrying out the build-up process that covers the step of the described second side polymeric dielectric layer and on described first side, form the step of new dielectric layer with described another dielectric layer simultaneously that described first side is piled up the wiring layer part and second side is piled up wiring layer formation partly; And form other conductor layer by through hole formation step and pattern plating step.

49. each described Wiring board manufacturing method according to claim 46 to 48, wherein, the described formation step of piling up composite bed comprises successively and carrying out: ceramic dielectric layer and conductor layer are formed in this order the first stack layer assembly manufacturing step of making the first stack layer assembly on the first type surface of transfer base substrate; On the first type surface of support matrices, form the second stack layer assembly manufacturing step that the polymeric dielectric layer is made the second stack layer assembly; The polymeric dielectric layer of the conductor layer of the described first stack layer assembly and the described second stack layer assembly is bonded to together bonding step; And the transfer base substrate that removes described transfer base substrate from described ceramic dielectric layer removes step.

50. according to the described Wiring board manufacturing method of claim 49, wherein, the described first stack layer assembly manufacturing step comprises: in the described ceramic dielectric layer on being formed at a first type surface of described transfer base substrate with the ceramic side cutting part patterning step of described ceramic side cutting part patterning; The conductor layer that forms conductor layer on the described ceramic dielectric layer behind the patterning forms step; And in described conductor layer patterned conductor side cutting part to be used for being communicated with the conductor side cutting part patterning step of described conductor side cutting part and described ceramic side cutting part, in described bonding step, under being in the state of uncured or semi-solid preparation, described polymeric dielectric layer piling up described second stack layer on the described first stack layer assembly of the described connection cutting part that has formed the described conductor side cutting part that comprises described ceramic side cutting part and be communicated with it, be bonded in first type surface on the first type surface of described connection cutting part opening one side described polymeric dielectric layer, the described first stack layer assembly and the second stack layer assembly under this condition pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of described polymeric dielectric layer in the described connection cutting part and after cure polymer.

51. according to the described Wiring board manufacturing method of claim 50, wherein, insert polymer and solidify this polymer by pressurization in described connection cutting part, first type surface by described transfer base substrate forms the ceramic side polymer filling part that maintains an equal level with described ceramic dielectric layer, carries out described transfer base substrate then and removes step; Described ceramic side polymer filling part is removing the perforation that is formed for forming through hole on first type surface one side that exposes behind the described transfer base substrate by laser processing.

52. according to the described a kind of Wiring board manufacturing method of claim 51, wherein, the step of described manufacturing perforation is to form perforation so that described perforation has the size that makes the polymer of filling described conductor side cutting part be retained between the described perforation and first conductor layer, pass described ceramic dielectric layer, described first conductor layer and described polymeric dielectric layer successively simultaneously.

Claims (52)

1. a wiring plate is characterized in that a wiring layer that piles up that has wherein piled up one deck dielectric layer and one deck conductor layer partly is formed at the core board part at least on the first type surface, pile up wiring layer and comprise that is partly piled up a wherein one layer of polymeric dielectric layer of composite bed part, one deck conductor layer and one deck ceramic dielectric layer are stacked so that contact each other from that side of core board part in this order, the conductor layer that piles up in the composite bed part is partly cut from in-plane to obtain a conductor side cutting part, the ceramic dielectric layer is partly cut from in-plane to obtain a ceramic side cutting part, pottery side cutting part and conductor side cutting part are coupled to be communicated with cutting part to form one, and a polymer that constitutes the polymeric dielectric layer is received in the connection cutting part to extend to ceramic side cutting part via conductor side cutting part.

2. a kind of wiring plate according to claim 1, it is characterized in that also comprising that the conductor layer of one deck in piling up the composite bed part is also referred to as first conductor layer, be stacked on one deck second conductor layer of an opposite side with first conductor layer on the ceramic dielectric layer, wherein first conductor layer, ceramic dielectric layer and second conductor layer are formed an electric capacity.

3. a kind of wiring plate according to claim 2, it is characterized in that on an opposite side of ceramic side polymer filling part bonding conductor side cutting part, place a conductive pattern of forming second a conductor layer part and fill the ceramic side polymer filling part that at least one is communicated with the ceramic side cutting part of cutting part to contact one.Boundary face between conductive pattern and the ceramic side polymer filling part maintains an equal level mutually with that side master meter plane of second conductor layer of ceramic dielectric layer.

4. a kind of wiring plate according to claim 3, it is characterized in that forming the 3rd conductor layer it contacts the polymeric dielectric layer on an opposite side of first conductor layer, form the conductive pattern of second conductor layer and the 3rd conductor layer by penetrating the ceramic dielectric layer successively, the through hole of first conductor layer and polymeric dielectric layer is conducted electricity to be connected, first conductor layer and through hole are insulated from each other by the polymer of filling conductor side cutting part, are used for being formed in the ceramic side polymer filling part of filling ceramic side cutting part in the perforation of a through hole of ceramic side cutting part formation.

5. according to arbitrary described a kind of wiring plate in the claim 2 to 4, it is characterized in that forming and being used for the second conductor side cutting part of connection cutting part of coupling part by cut second conductor layer on in-plane top, connecting on this zone that is communicated with cutting part, the second conductor side polymer filling part of filling the second conductor side cutting part combines with the ceramic side polymer filling part of filling ceramic side cutting part, is partly extended from being communicated with the cutting part edge on the main surface side of ceramic dielectric layer simultaneously.

6. a kind of wiring plate according to claim 5 is characterized in that being communicated with cutting part and the second conductor side cutting part forms along ceramic dielectric layer outer ledge.

7. a wiring plate is characterized in that comprising that is piled up a wherein one layer of polymeric dielectric layer of composite bed part, the ceramic dielectric layer that one deck conductor layer and one deck are made by the pottery of high-k is stacked in this order so that contact each other, the conductor layer that piles up in the composite bed is partly cut from in-plane to obtain a conductor side cutting part, the ceramic dielectric layer is partly cut from in-plane to obtain a ceramic side cutting part, pottery side cutting part and conductor side cutting part are coupled to be communicated with cutting part to form one, its formation polymeric dielectric layer of polymer also is received in the connection cutting part to extend to ceramic side cutting part via conductor side cutting part, when one deck conductor layer that the conductor layer in piling up composite bed part is called as first conductor layer and is stacked on the opposite side of first conductor layer on the ceramic dielectric layer is called as second conductor layer, an outside end face of ceramic dielectric layer is from least one first retraction width of end face retraction of a wiring plate unit, first conductor layer and second conductor layer outside end face from least one second retraction width bigger of the end face of wiring plate unit retraction than the first retraction width, and one by first conductor layer, the electric capacity that the ceramic dielectric layer and second conductor layer are formed.

8. a kind of wiring plate according to claim 7, it is characterized in that on an opposite side of ceramic side polymer filling part bonding conductor side cutting part, place a conductive pattern of forming second a conductor layer part and fill the ceramic side polymer filling part that at least one is communicated with the ceramic side cutting part of cutting part to contact one.Boundary face between conductive pattern and the ceramic side polymer filling part maintains an equal level mutually with that side master meter plane of second conductor layer of ceramic dielectric layer.

9. a kind of wiring plate according to claim 8, it is characterized in that forming the 3rd conductor layer it contacts the polymeric dielectric layer on an opposite side of first conductor layer, form the conductive pattern of second conductor layer and the 3rd conductor layer by penetrating the ceramic dielectric layer successively, the through hole of first conductor layer and polymeric dielectric layer is conducted electricity to be connected, first conductor layer and through hole are insulated from each other by the polymer of filling conductor side cutting part, are used for being formed in the ceramic side polymer filling part of filling ceramic side cutting part in the perforation of a through hole of ceramic side cutting part formation.

10. according to Claim 8 or 9 described a kind of wiring plates, it is characterized in that forming and being used for the second conductor side cutting part of connection cutting part of coupling part by cut second conductor layer on in-plane top, connecting on this zone that is communicated with cutting part, the second conductor side polymer filling part of filling the second conductor side cutting part combines with the ceramic side polymer filling part of filling ceramic side cutting part, is partly extended from being communicated with the cutting part edge on the main surface side of ceramic dielectric layer simultaneously.

11. a kind of wiring plate according to claim 10 is characterized in that being communicated with cutting part and the second conductor side cutting part forms along ceramic dielectric layer outer ledge.

12. wiring plate that loads an electronic unit on it, it is characterized in that comprising one has formed therein along the base of the vertically extending via conductors of thickness direction, base on first side and second side, formed respectively separately piled up an one layer of polymeric dielectric layer and a conductor pile up the wiring layer part, the first side wiring layer part that only is arranged on first side has formed an electric capacity that comprises one deck ceramic dielectric layer, first side is piled up wiring layer and is comprised that is partly piled up a wherein one layer of polymeric dielectric layer of composite bed part, conductor layer and one deck ceramic dielectric layer that one deck forms an electrode of electric capacity are stacked so that contact each other from that side of base in this order, a conductor of forming other electrode of electric capacity is formed to be used for covering the ceramic dielectric layer, be positioned at second side on second side and pile up wiring layer and partly comprise one deck and pile up the thicker polymeric dielectric layer of polymeric dielectric layer in the composite bed part, when beginning number from base, be equivalent to first side and pile up the composite bed part from level than first side.

13. a method of making wiring plate comprises that a wiring layer that piles up that has wherein piled up one deck dielectric layer and one deck conductor layer partly is formed at the core board part at least on the first type surface, pile up wiring layer and comprise that is partly piled up a wherein one layer of polymeric dielectric layer of composite bed part, one deck conductor layer and one deck ceramic dielectric layer are stacked so that contact each other from that side of core board part in this order, it is characterized in that carrying out successively one by making ceramic dielectric layer and conductor layer be formed at the first stack layer assembly manufacturing step of making the first stack layer assembly on the first type surface of transfer base substrate in this order, one by making the polymeric dielectric layer be formed at the second stack layer assembly manufacturing step of making the second stack layer assembly on the core board first type surface partly, the bonding step that the conductor layer of the first stack layer assembly is bonded to the polymeric dielectric layer of second stack layer, and one remove step with transfer base substrate from the transfer base substrate that the ceramic dielectric layer removes.

14. a kind of Wiring board manufacturing method according to claim 13, it is characterized in that in bonding step, by inserting alignment pin respectively in the via that is formed in the first stack layer assembly and the second stack layer assembly, the first stack layer assembly and the second stack layer assembly just can be bonded to together and locate each other simultaneously.

15., it is characterized in that to use fusing point to be higher than the metal substrate of sintering temperature of the pottery of forming the ceramic dielectric layer as transfer base substrate according to claim 13 or 14 described a kind of Wiring board manufacturing methods.The first stack layer assembly manufacturing step comprise a not sintering green ceramic layer that forms the not sintering green ceramic layer that one deck made by the not agglomerated material of ceramic dielectric layer forms step and general not sintering green ceramic layer with the sintering step of metal substrate sintering.

16. a kind of Wiring board manufacturing method according to claim 15 is characterized in that sintering green ceramic layer is not that its sheet shape of ceramic powder formation that also will mix polymeric adhesive by hybrid ceramic powder and a kind of polymeric adhesive of a ceramic green substrate forms.

17. a kind of Wiring board manufacturing method according to claim 16 is characterized in that the ceramic green substrate is bonded on the metal substrate, then the ceramic green substrate be configured as the ceramic dielectric layer that will obtain shape and after carry out sintering step.

18. a kind of Wiring board manufacturing method according to claim 17, it is characterized in that the ceramic green substrate can be formed on the carrier sheet of being made by polymer, the ceramic green substrate that on the opposite side of gluing of surfaces, is combined into one with carrier sheet be bonded on the metal substrate and in this state with carrier sheet by laser forming, remove carrier sheet afterwards, and carry out sintering step.

19. according to arbitrary described a kind of Wiring board manufacturing method in the claim 15 to 18, it is characterized in that in bonding step, comprise that the second stack layer assembly of core board part has been equipped with the plane integrated unit of the wiring plates of wanting manufactured in a large number, and each a large amount of element number that contains is arranged and is positioned on the second stack layer assembly less than the first stack layer assembly of the element number of the second stack layer assembly.

20. a kind of Wiring board manufacturing method according to claim 19 is characterized in that being formed at the first stack layer assembly and being located by it when making the first stack layer assembly be bonded on the second stack layer assembly in the via on four angles and the via on the corresponding second stack layer components side respectively by alignment pin is inserted.

21. according to arbitrary described a kind of Wiring board manufacturing method in the claim 13 to 20, it is characterized in that removing in the step at transfer base substrate, metal substrate is removed by chemical etching.

22. according to arbitrary described a kind of Wiring board manufacturing method in the claim 13 to 21, it is characterized in that manufactured target is arbitrary described wiring plate in the claim 1 to 6, its feature also is that the mode of the first stack layer assembly manufacturing step has comprised the ceramic side cutting part forming step of shaped ceramic side cutting part in the ceramic dielectric layer on being formed at the transfer base substrate first type surface, a conductor layer that forms one deck conductor layer on the ceramic dielectric layer after the shaping forms step, and one in conductor layer formed conductor side cutting part to be used for connecting the conductor side cutting part forming step of conductor side cutting part and ceramic side cutting part.And in the bonding step therein, on having formed, piled up second stack layer by the first stack layer assembly of the connection cutting part of the ceramic side cutting part of its connection and conductor side cutting part, the second stack layer assembly be in the state of the uncured or semi-solid preparation of polymeric dielectric layer be used for connection cutting part at the first type surface of the first stack layer assembly by that side of opening wide on the first type surface of bonding polymer dielectric layer, the first stack layer assembly under this condition and the second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of polymeric dielectric layer be communicated with in the cutting part and after cure polymer.

23. a kind of Wiring board manufacturing method according to claim 22, it is characterized in that manufactured target is arbitrary described wiring plate in the claim 2 to 6, its feature also is to remove after step finishes at transfer base substrate, and second conductor layer is formed on that side first type surface that the transfer base substrate of ceramic dielectric layer is removed.

24. a kind of Wiring board manufacturing method according to claim 23, it is characterized in that manufactured target is the wiring plate described in claim 3 or 4, its feature also is that in bonding step polymer and cure polymer are inserted in pressurization in being communicated with cutting part, thus form ceramic side polymer filling part so that its at that side of the master meter plane of transfer base substrate and ceramic dielectric layer fair and after carry out transfer base substrate and remove step.

25. a kind of Wiring board manufacturing method according to claim 24, it is characterized in that manufactured target is the described wiring plate of claim 4, its feature also is to form perforation on that side first type surface that ceramic side polymer filling part exposes by laser drill after transfer base substrate removes.

26. a kind of Wiring board manufacturing method according to claim 23, it is characterized in that manufactured target is claim 5 or 6 described wiring plates, its feature also is that removing step at transfer base substrate forms second conductor layer after finishing, form the second conductor side cutting part to be used for the connection cutting part of coupling part, another polymeric dielectric layer is formed and is stacked on the first type surface of second conductor layer that has formed the second conductor side cutting part, and the polymer of composition polymeric dielectric layer is received in the second conductor side cutting part so that polymeric dielectric layer and ceramic side polymer filling part are combined.

27. a method is used for making a kind of wiring plate, and it has one and piles up wherein one layer of polymeric dielectric layer of composite bed part, the ceramic dielectric layer that one deck conductor layer and one deck are made by the pottery of high-k is stacked in this order so that contact each other, it is characterized in that order carries out one by ceramic dielectric layer and conductor layer are formed on the first type surface of transfer base substrate in this order to make the first stack layer assembly manufacturing step of the first stack layer assembly, a manufacturing has formed the second stack layer assembly manufacturing step of the second stack layer assembly of polymeric dielectric layer, bonding step in order to the polymeric dielectric layer of the conductor layer of bonding a large amount of first stack layer assemblies and the second stack layer assembly like this when will pile up conductor layer in the composite bed part and be called first conductor layer and will be stacked on that one deck conductor layer on the opposite side with first conductor layer is called second conductor layer on the ceramic dielectric layer, an outside end face of ceramic dielectric layer is from least one first retraction width of end face retraction of a wiring plate unit, first conductor layer and second conductor layer outside end face from least one second retraction width bigger of the end face of wiring plate unit retraction than the first retraction width, and by first conductor layer, ceramic dielectric layer and second conductor layer are formed an electric capacity, and one removes step with transfer base substrate from the transfer base substrate that the ceramic dielectric layer removes.

28. a kind of Wiring board manufacturing method according to claim 27, it is characterized in that in bonding step, comprise that the second stack layer assembly of core board part has been equipped with the plane integrated unit of the wiring plates of wanting manufactured in a large number, and each a large amount of element number that contains is arranged and is positioned on the second stack layer assembly less than the first stack layer assembly of the element number of the second stack layer assembly.

29., it is characterized in that by alignment pin being inserted respectively when making a large amount of first stack layer assemblies be bonded on the second stack layer assembly in the via that is formed on the first stack layer assembly and the via on the second stack layer components side mutually positioning according to claim 27 or 28 described a kind of Wiring board manufacturing methods.

30. a kind of Wiring board manufacturing method according to claim 29 is characterized in that being located by it by alignment pin being inserted when making the first stack layer assembly be bonded on the second stack layer assembly in the via be formed on the first stack layer assembly and the via on the corresponding second stack layer components side.

31 according to the arbitrary described a kind of Wiring board manufacturing method of claim 27 to 30, it is characterized in that in bonding step, the first a large amount of stack layer assemblies is placed on the adjusting part that forms in the spacer, and the conductor layer of a large amount of first stack layer assemblies is bonded to mutually with the polymeric dielectric layer of the second stack layer assembly.

32 a kind of Wiring board manufacturing methods according to claim 31 is characterized in that spacer made by the metallic plate identical with a large amount of first stack layer component thickness.

33. according to arbitrary described a kind of Wiring board manufacturing method in the claim 27 to 31, the mode that it is characterized in that the first stack layer assembly manufacturing step has comprised the ceramic side cutting part forming step of shaped ceramic side cutting part in the ceramic dielectric layer on being formed at the transfer base substrate first type surface, a conductor layer that forms one deck conductor layer on the ceramic dielectric layer after the shaping forms step, and one in conductor layer formed conductor side cutting part to be used for connecting the conductor side cutting part forming step of conductor side cutting part and ceramic side cutting part.And in the bonding step therein, on having formed, piled up second stack layer by the first stack layer assembly of the connection cutting part of the ceramic side cutting part of its connection and conductor side cutting part, the second stack layer assembly be in the state of the uncured or semi-solid preparation of polymeric dielectric layer be used for connection cutting part at the first type surface of the first stack layer assembly by that side of opening wide on the first type surface of bonding polymer dielectric layer, the first stack layer assembly under this condition and the second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of polymeric dielectric layer be communicated with in the cutting part and after cure polymer.

34. a kind of Wiring board manufacturing method according to claim 33, it is characterized in that in bonding step polymer and cure polymer are inserted in pressurization in being communicated with cutting part, thus form ceramic side polymer filling part so that its at that side of the master meter plane of transfer base substrate and ceramic dielectric layer fair and after carry out transfer base substrate and remove step.

35. a method is used for making a kind of wiring plate, and it has one and piles up wherein one layer of polymeric dielectric layer of composite bed part, the ceramic dielectric layer that one deck conductor layer and one deck are made by the pottery of high-k is stacked in this order so that contact each other, it is characterized in that order carries out one by ceramic dielectric layer and conductor layer are formed on the first type surface of transfer base substrate in this order to make the first stack layer assembly manufacturing step of the first stack layer assembly, second stack layer assembly that is separated with the first stack layer assembly and on the gluing of surfaces side, has the polymeric dielectric layer of one second its manufacturing of stack layer assembly manufacturing step, the bonding step that the conductor layer of the first stack layer assembly is bonded to the polymeric dielectric layer of second stack layer, and one remove step with transfer base substrate from the transfer base substrate that the ceramic dielectric layer removes.

36. a kind of Wiring board manufacturing method according to claim 35 is characterized in that by alignment pin being inserted respectively when making a large amount of first stack layer assemblies be bonded on the second stack layer assembly in the via that is formed on the first stack layer assembly and the via on the second stack layer components side mutually positioning.

37., it is characterized in that to use fusing point to be higher than the metal substrate of sintering temperature of the pottery of forming the ceramic dielectric layer as transfer base substrate according to a kind of Wiring board manufacturing method described in claim 35 or 36.The first stack layer assembly manufacturing step comprise a not sintering green ceramic layer that forms the not sintering green ceramic layer that one deck made by the not agglomerated material of ceramic dielectric layer forms step and general not sintering green ceramic layer with the sintering step of metal substrate sintering.

38. according to the described a kind of Wiring board manufacturing method of claim 37, it is characterized in that by alignment pin being inserted respectively when making a large amount of first stack layer assemblies be bonded on the second stack layer assembly in the via that is formed on the first stack layer assembly and the via on the second stack layer components side mutually positioningly, and via is formed in the metal substrate by chemical etching.

39., it is characterized in that sintering green ceramic layer is not that its sheet shape of ceramic powder formation that also will mix polymeric adhesive by hybrid ceramic powder and a kind of polymeric adhesive of a ceramic green substrate forms according to a kind of Wiring board manufacturing method described in claim 37 or 38.

40. according to the described a kind of Wiring board manufacturing method of claim 39, it is characterized in that the ceramic green substrate is bonded on the metal substrate, then the ceramic green substrate be configured as the ceramic dielectric layer that will obtain shape and after carry out sintering step.

41. according to the described a kind of Wiring board manufacturing method of claim 40, it is characterized in that the ceramic green substrate can be formed on the carrier sheet of being made by polymer, the ceramic green substrate that on the opposite side of gluing of surfaces, is combined into one with carrier sheet be bonded on the metal substrate and in this state with carrier sheet by laser forming, remove carrier sheet afterwards, and carry out sintering step.

42. according to the described a kind of Wiring board manufacturing method of claim 41, the thickness that it is characterized in that adjusting the ceramic green substrate makes that the thickness range of the ceramic dielectric layer that obtains by sintering is that 1 μ m is to 100 μ m.

43. according to the described a kind of Wiring board manufacturing method of claim 42, to it is characterized in that using a kind of thickness range be 20 μ m to the pet resin thin slice of 100 μ m as carrier sheet.

44. according to arbitrary described a kind of Wiring board manufacturing method in the claim 35 to 43, it is characterized in that removing in the step at transfer base substrate, metal substrate is removed by chemical etching.

45., it is characterized in that win stack layer assembly and the second stack layer assembly being bonded to together by pressurization on stacking direction according to arbitrary described a kind of Wiring board manufacturing method in the claim 35 to 44.

46. a method is made a kind of electric capacity internally-arranged type wiring plate, and it has one and has wherein formed a base along the vertically extending conductor of thickness direction, base on first side and second side, formed respectively separately piled up an one layer of polymeric dielectric layer and a conductor pile up the wiring layer part, the first side wiring layer part that only is arranged on first side has formed an electric capacity that comprises one deck ceramic dielectric layer, be primarily characterized in that and comprise that forms a wherein one layer of polymeric dielectric layer of a step of piling up the composite bed part, conductor and one deck ceramic dielectric layer as capacitance electrode is stacked so that contact each other from that side of base in this order, in such mode, piling up composite bed has partly formed first side of part and piles up the wiring layer part and be formed on the base or wherein, one forms the one layer of polymeric dielectric layer and piles up the step of wiring layer part to form second side on base, making a perforation for one is exposed to first side under the situation on second side and piles up the step that is used for the via conductors that interlayer connects in the composite bed part to be used for being formed on the polymeric dielectric layer, use has the chemical liquid that is exposed to the corrosion strength of corrosion polymer under the situation on second side at the polymeric dielectric layer and cleans the step that is formed at the perforation on first side, and step of formation on the perforation inner surface as the conductor of via conductors, on an opposite side with first conductor layer of ceramic dielectric layer, pile up one deck second conductor layer and pass through first conductor layer thus, ceramic dielectric layer and second conductor layer are formed electric capacity, and step its use another polymeric dielectric layer covering surfaces by the second side polymeric dielectric layer of chemicals roughening and connect new and old polymeric dielectric layer to together.

47., it is characterized in that using the step of another polymeric dielectric layer overlie polymer dielectric layer is step or a step that adopts liquid polymer of an a kind of thin polymer film of lamination according to the described a kind of Wiring board manufacturing method of claim 46.

48. according to a kind of Wiring board manufacturing method described in claim 46 or 47, it is characterized in that first side piles up wiring layer and second side and pile up the formation of wiring layer and will be undertaken by build-up process, wherein carry out with another dielectric layer covering the step of the second side polymeric dielectric layer and on first side, forming the step of new dielectric layer simultaneously, and form other conductor layer by a through hole formation step and a graphic plating step.

49. according to arbitrary described a kind of Wiring board manufacturing method in the claim 46 to 48, it is characterized in that forming the step of piling up composite bed for carrying out one successively by making ceramic dielectric layer and conductor layer be formed at the first stack layer assembly manufacturing step of making the first stack layer assembly on the first type surface of transfer base substrate in this order, one by making the polymeric dielectric layer be formed at the second stack layer assembly manufacturing step of making the second stack layer assembly on the core board first type surface partly, the bonding step that the conductor layer of the first stack layer assembly is bonded to the polymeric dielectric layer of second stack layer, and one remove step with transfer base substrate from the transfer base substrate that the ceramic dielectric layer removes.

50. according to the described a kind of Wiring board manufacturing method of claim 49, the mode that it is characterized in that the first stack layer assembly manufacturing step has comprised the ceramic side cutting part forming step of shaped ceramic side cutting part in the ceramic dielectric layer on being formed at the transfer base substrate first type surface, a conductor layer that forms one deck conductor layer on the ceramic dielectric layer after the shaping forms step, and one in conductor layer formed conductor side cutting part to be used for connecting the conductor side cutting part forming step of conductor side cutting part and ceramic side cutting part.And in the bonding step therein, on having formed, piled up second stack layer by the first stack layer assembly of the connection cutting part of the ceramic side cutting part of its connection and conductor side cutting part, the second stack layer assembly be in the state of the uncured or semi-solid preparation of polymeric dielectric layer be used for connection cutting part at the first type surface of the first stack layer assembly by that side of opening wide on the first type surface of bonding polymer dielectric layer, the first stack layer assembly under this condition and the second stack layer assembly pressurized on the stacking direction so that constitute be received under the effect of polymer at pressure of uncured or semi-solid preparation of polymeric dielectric layer be communicated with in the cutting part and after cure polymer.

51. according to the described a kind of Wiring board manufacturing method of claim 50, it is characterized in that in bonding step, in being communicated with cutting part, pressurizeing and insert polymer and cure polymer, thereby form ceramic side polymer filling part so that it maintains an equal level in that side of the master meter plane of transfer base substrate and ceramic dielectric layer, carry out transfer base substrate afterwards and remove step, and ceramic side polymer filling part forms a perforation that is used to form through hole by laser technology from removing that side first type surface that exposes behind the transfer base substrate.

52. according to the described a kind of Wiring board manufacturing method of claim 51, the step that it is characterized in that making perforation for forming perforation so that the size of perforation when can make the polymer of filling conductor side cutting part be retained between the perforation and first conductor layer perforation penetrate ceramic dielectric layer, first conductor layer and polymeric dielectric layer successively.

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