CN101091313A - Electronic component package - Google Patents

Electronic component package Download PDF

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Publication number
CN101091313A
CN101091313A CNA2006800016323A CN200680001632A CN101091313A CN 101091313 A CN101091313 A CN 101091313A CN A2006800016323 A CNA2006800016323 A CN A2006800016323A CN 200680001632 A CN200680001632 A CN 200680001632A CN 101091313 A CN101091313 A CN 101091313A
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CN
China
Prior art keywords
electronic unit
piece cover
base plate
installation base
execution mode
Prior art date
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Granted
Application number
CNA2006800016323A
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Chinese (zh)
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CN101091313B (en
Inventor
鹰野敦
古川光弘
高山了一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Industrial Co Ltd
Original Assignee
松下电器产业株式会社
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Publication of CN101091313A publication Critical patent/CN101091313A/en
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Publication of CN101091313B publication Critical patent/CN101091313B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

An electronic component package with increased strength against external pressure. In the electronic component package where an electronic component mounted on a packaging substrate through an external electrode placed thereon is resin molded, the electronic component has a component cover for forming a cavity by covering an element placed on the lower surface of a component substrate, and a protective body having a smaller modulus of elasticity than the mold resin is provided at a portion on the lower surface of the component cover, which portion faces that portion of the cavity which excludes the joint to the external electrode.

Description

The electronic unit encapsulation
Technical field
The present invention relates to the electronic unit encapsulation.
Background technology
As an example of existing electronic unit encapsulation, the encapsulation of surface acoustic wave (hereinafter referred to as " SAW ") device, its profile has as shown in figure 19: parts substrate 101; The IDT as element (Interdigital Transducer) electrode 102 that (below of Figure 19 is with the surface of aftermentioned installation base plate 105 side in opposite directions) forms below this parts substrate 101; In IDT electrode 102 part in opposite directions therewith the piece cover 104 of recess 103 is arranged; And, the outer electrode 106 that this piece cover 104 is engaged with installation base plate 105.About the prior art documentation ﹠ info of so existing electronic unit encapsulation, for example be known that the spy opens 2000-261284 communique, spy and opens that 2001-244785 communique, spy are opened the 2003-110391 communique, the spy opens 2005-318157 communique etc.
Yet, in the existing electronic unit encapsulation, the compression shock in the time of can not bearing the resin mould processing sometimes.
In other words, be provided with recess 103 in the piece cover 104,, have the part of this recess 103 to make that piece cover 104 is extremely thin so that this piece cover 104 does not contact with a plurality of IDT electrodes 102.Therefore, this SAW device is installed on the installation base plate 105, under the situation with the resin mould covering, the pressure that enters the resin mould between piece cover 104 and the installation base plate 105 is very big again, therefore, and piece cover 104 damaged.
Summary of the invention
The objective of the invention is to improve the intensity of the reply external pressure of electronic unit encapsulation, prevent damage.
Therefore; the present invention is by being configured in the outer electrode on the installation base plate; the electronic unit that the electronic component-use resin mould of installing on the installation base plate is covered encapsulates; electronic unit has the piece cover that forms the hole; this piece cover covers the element of lower surface (with the surface of an installation base plate side in opposite directions) configuration of parts substrate; in the lower surface of piece cover (with the surface of an installation base plate side in opposite directions); except with the outer electrode engaging portion; on the part in opposite directions of hole, be provided with and the little protective of resin mould resilience in comparison modulus.
In other words, electronic unit of the present invention comprises the encapsulation installation base plate; Be configured in the outer electrode on the installation base plate; Electronic unit, it is installed on the installation base plate by outer electrode; And on installation base plate the resin mould of overlay electronic parts, electronic unit comprises: the parts substrate; Element, it is configured in the surface towards installation base plate of parts substrate; And; piece cover; the face side towards installation base plate of its coating member substrate; piece cover is having the hole with element part in opposite directions; with the little protective of resin mould resilience in comparison modulus; be arranged on, except with the outer electrode engaging portion, with the surface towards installation base plate of hole piece cover in opposite directions.
Utilize aforementioned structure; be provided with recess in piece cover; make the thickness attenuation; the lower surface of piece cover is provided with and the little protective of resin mould resilience in comparison modulus; so; this protective when resin mould is filled, be subjected to from below applied pressure and strain can be distributed to horizontal direction with this pressure.So, can cushion the stress that the outside is applied to electronic unit.
Therefore, the present invention can improve the intensity of the answering pressure of electronic unit encapsulation, prevents damage.
Description of drawings
Fig. 1 is the stereogram of the electronic unit encapsulation of first execution mode.
The profile of the electronic unit encapsulation of first execution mode of Fig. 2.
Fig. 3 is the lower surface figure of parts substrate that constitutes the electronic unit encapsulation of first execution mode.
Fig. 4 is the circuit diagram of SAW duplexer that constitutes the electronic unit encapsulation of first execution mode.
Fig. 5 is the lower surface figure of piece cover that constitutes the electronic unit encapsulation of first execution mode.
Fig. 6 is the profile of the SAW duplexer of first execution mode.
Fig. 7 is the upper surface figure that forms the mask of the first execution mode piece cover.
Fig. 8 is the lower surface figure of the first execution mode piece cover.
Fig. 9 is the profile of second execution mode electronic unit encapsulation.
Figure 10 is the lower surface figure of parts substrate that constitutes the electronic unit encapsulation of second execution mode.
Figure 11 A is first figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 11 B is second figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 11 C is the 3rd figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 11 D is the 4th figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 11 E is the 5th figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 11 F is the 6th figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 12 A is the 7th figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 12 B is the 8th figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 12 C is the 9th figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 12 D is the tenth figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 12 E is the 11 figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 12 F is the 12 figure of manufacturing process of the SAW duplexer of expression second execution mode.
Figure 13 is the profile of the electronic unit encapsulation of the 3rd execution mode.
Figure 14 is the lower surface figure of parts substrate that constitutes the electronic unit encapsulation of the 4th execution mode.
Figure 15 A is first figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 15 B is second figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 15 C is the 3rd figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 15 D is the 4th figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 15 E is the 5th figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 15 F is the 6th figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 16 A is the 7th figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 16 B is the 8th figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 16 C is the 9th figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 16 D is the tenth figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 16 E is the 11 figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 16 F is the 12 figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 16 G is the 13 figure of manufacturing process of the SAW duplexer of expression the 3rd execution mode.
Figure 17 is the lower surface figure of the piece cover of the 3rd execution mode.
Figure 18 is the profile of the SAW duplexer of the 3rd execution mode.
Figure 19 is the profile of existing electronic unit encapsulation.
Description of reference numerals
1 SAW duplexer (electronic unit)
3 installation base plates
4 resin moulds
5 outer electrodes
6 parts substrates
7 IDT electrodes (element)
8 recesses
9 piece cover
10 protectives
16 holes
20 elements lid
30 junction surfaces
Embodiment
(first execution mode)
Is the electronic unit encapsulation of example explanation first embodiment of the invention with antenna multicoupler as electronic unit with acoustic wave device 1 (hereinafter referred to as " SAW duplexer 1 ").
Constitute the SAW duplexer 1 of this electronic unit encapsulation, its stereogram as shown in Figure 1,2a～2c is configured on the installation base plate 3 with other electronic unit, and is covered by resin mould 4.SAW multiplexer 1, its profile are installed on the installation base plate 3 by the outer electrode 5 that is configured on the installation base plate 3, and are covered by resin mould 4 as shown in Figure 2.
And SAW duplexer 1 has: parts substrate 6; Be configured in this parts substrate 6 lower surface (be meant: below Fig. 2, towards the surface of a side of installation base plate 3, below identical) a plurality of IDT electrodes 7 as element; Sides and have the piece cover 9 of recess 8 with IDT electrode 7 part in opposite directions below the coating member substrate 6 are provided with resinous protective 10 below this piece cover 9.In addition, outer electrode 5 is meant with the earth terminal 12 of SAW duplexer 1 shown in Figure 8, receive terminal 13, antenna terminal 14, send the electrode that terminal is 15 that be connected, be located at installation base plate 3, and the back will be described in detail.
The following describes the manufacture method of this electronic unit encapsulation.
At first, as shown in Figure 3,, form the circuit of SAW duplexer 1 shown in Figure 4 at the lower surface formation IDT electrode 7 and the groove 11 of parts substrate 6.In addition, the reflector that disposes parallel short-circuiting electrode is configured in the both ends of IDT electrode 7 usually, in this description will be omitted.And groove 11 is formed by dry etch process.The material of parts substrate 6 is LiTaO 3Perhaps LiNbO 3, the material of IDT electrode 7 uses is metal material such as aluminium.And the reception terminal 13 in the circuit of SAW duplexer 1 shown in Figure 4, antenna terminal 14, transmission terminal 15, earth terminal 12 correspond respectively to reception terminal 13, antenna terminal 14, transmission terminal 15 and the earth terminal 12 of parts substrate 6 lower surfaces shown in Figure 3.
On the other hand, corrode owing to oxidation and moisture, as shown in Figure 2, be provided with the piece cover 9 that makes with silicon in the lower face side of parts substrate 6 in order to prevent IDT electrode 7.Fig. 2 is the figure of the A-A section of presentation graphs 3.
In piece cover 9, as shown in Figure 5, forming recess 8 with dry etch process with aforementioned IDT electrode 7 part in opposite directions.Thus, as shown in Figure 2, between piece cover 9 and IDT electrode 7, contact with piece cover 9, can form hole 16, thereby can guarantee the oscillation space of IDT electrode 7 for fear of IDT electrode 7.In addition, as Fig. 2 and shown in Figure 5,, can reduce the area of the part of piece cover 9 attenuation, thereby can improve the intensity of opposing external pressure by hole 16 being set in each or every two adjacent IDT electrode 7 places.
Then, the operation that piece cover 9 is joined to parts substrate 6 is described.
At first, photosensitive resin coating on the lower surface of parts substrate 6 (being exactly that face that is provided with IDT electrode 7) side is as shown in Figure 3 placed mask 18 as shown in Figure 7 then.The part of shade in the mask 18 of Fig. 7, be the part suitable with the through hole 17 of the IDT electrode 7 of Fig. 3 and Fig. 6, because perforate in this section, so when from mask 18 exposure with when clean, just on the part of the shade on the mask 18, photoresist solidifies and is residual, does not just have residual in shadeless part.
Then, remove mask 18, all be coated with SiO at the lower surface of parts substrate 6 shown in Figure 3 2, the dissolving photoresist and is removed, and like this, is not only having the part of photoresist, i.e. part beyond IDT electrode 7 and the through hole 17, residual Si O 2By this residual SiO 2, combination between atom directly takes place between parts substrate 6 and the piece cover 9 at normal temperatures, can form SAW duplexer 1 as shown in Figure 6.In this first execution mode, the operation of attachment lid 9 is carried out in vacuum, still, also can engage with cement between piece cover 9 and the parts substrate 6, like this, can carry out under blanket of nitrogen or oxygen atmosphere.In addition, when carrying out under oxygen atmosphere, the hole 16 of Fig. 2 of this first execution mode is very little spaces, so the amount of oxygen in the hole 16 also is micro-, under such amount of oxygen, IDT electrode 7 surfaces only form very thin metal oxide film, are difficult to oxidation on the contrary.
Then, as shown in Figure 6, form through hole 17 on this piece cover 9, be used to connect as shown in Figure 2 outer electrode 5 and parts substrate 6.This through hole 17 can form with dry etch process.Fig. 6 is the figure of B-B section in the presentation graphs 3.Utilize methods such as sputter, printing with paste in this through hole 17, to imbed metal material, can obtain the electrical connection between IDT electrode and the outer electrode like this.
Then; shadeless part in Fig. 8; that is, disposed the reception terminal 13 lower surface setting, that engage with outer electrode 5 in piece cover 9, antenna terminal 14, sent the part outside the position of terminal 15, earth terminal 12, resinous as shown in Figure 2 protective 10 has been set.This protective 10 is the modified rubber pliability resins (go system sex change Scratch Trees fat) that added rubber such as silicon rubber in epoxy resin or polyimide resin, forms with methods such as printings.
So, behind parts substrate 6 and piece cover 9 joints, as shown in Figure 8, the earth terminal 12 that the lower surface of piece cover 9 is provided with, reception terminal 13, antenna terminal 14 and transmission terminal 15, as shown in Figure 2, engage with the outer electrode 5 of installation base plate 3, SAW duplexer 1 is installed on the installation base plate 3.
At last, the operation that covers SAW duplexer 1 with resin mould 4 is described.
At first,, put into mould, then inject heated mold resin 4, cooling forming then to this mould with the compound electronic unit of having installed before the covering of the SAW duplexer 1 of Fig. 1 and a plurality of electronic unit 2a～2c.In this first execution mode, resin mould 4 is for being dispersed with the epoxy resin of filler, and the injection condition of resin mould 4 is that resin temperature is 175 ℃, and injection pressure is 50～100atm.
When being filled into this resin mould 4 between piece cover 9 and the installation base plate 3; be applied in the very large upwards pressure of (direction that makes progress among Fig. 2) on the piece cover 9; but; because the protective 10 that makes of the resin that is provided with of the lower surface of piece cover 9 is littler than the modulus of elasticity of resin mould 4 as shown in Figure 2; so deform when being subjected to the pressure of resin mould 4 since then, its pressure is dispersed to horizontal direction.So, can cushion stress to SAW duplexer 1 from the component packages below.
And because be provided with protective 10, the space between SAW duplexer 1 and the installation base plate 3 diminishes, and can reduce the amount of the resin mould 4 that enters this space.Like this, can suppress stress from resin mould 4.
Therefore, in this first execution mode, can improve the intensity of the encapsulation answering pressure of SAW duplexer 1, prevent damage.
In addition; in this first execution mode; as described above; protective is arranged on the shadeless part of Fig. 8; that is, the lower surface of piece cover 9 except with all parts of outer electrode 5 engaging portion (disposed earth terminal 12, receive terminal 13, antenna terminal 14, send the position of terminal 15), still; also can be arranged at least except with the bonding part of outer electrode 5, the part of a part relative with hole 16, can obtain same effect and effect.
And, in this first execution mode, as shown in Figure 3, on parts substrate 6, form a plurality of IDT electrodes 7, as shown in Figure 5, each or per two IDT electrodes 7 form recess, have formed a plurality of recesses 8 by this way, compare with the situation of a recess 8 that is provided with in the mode that covers whole IDT electrodes 7, can effectively suppress the damage of SAW duplexer 1.
That is,, hole 16 is cut apart, between a plurality of holes 16, formed partition wall 19 as shown in Figure 2 by a plurality of recesses 8 are set.So this partition wall 19 becomes pillar, can disperse external stress.So, can suppress the cracking of parts substrate 6 or piece cover 9.In addition, this partition wall 19 also can be in addition with formation in any way such as resins in hole 16.
And these a plurality of holes 16 also can form fully independently, also can the part connection with tubulose access path (showing especially among the figure) between the hole 16 of adjacency.By access path is set like this, when the part in hole 16 applied excessive external pressure, this external pressure can be dispersed to other hole 16 by access path.Therefore, can improve the intensity of the reply external pressure of electronic unit encapsulation.
This access path also can be arranged on the parts substrate 6, also can be located on the piece cover 9.And if access path is located on the parts substrate 6, the groove 11 of the lower surface of parts substrate 6 can be used as access path as shown in Figure 4.
(second execution mode)
Below, use the description of drawings second embodiment of the invention.
The main difference point of this second execution mode and aforementioned first execution mode is, in order to form hole 16, having used the below that covers as the IDT electrode 7 of element (is exactly the below among Fig. 9, side towards installation base plate 3, below identical) element lid 20, other similar structures uses same tag to illustrate, and omits its explanation.
The electronic unit encapsulation of this second execution mode also has such structure as shown in Figure 1: other electronic unit 2a～2c and SAW duplexer 1 have been installed on installation base plate 3, and have been covered with resin mould 4.
And, constituting the SAW duplexer 1 that electronic unit encapsulates, its profile comprises as shown in Figure 9: parts substrate 6; Be configured in a plurality of IDT electrodes 7 below this parts substrate 6 as element; Cover the element lid 20 of IDT electrode 7 following sides; Covering comprises the piece cover 9 of following integral body of the parts substrate 6 of element lid 20; And be arranged on the protective 10 that the resins below this piece cover 9 make.Outer electrode 5 is identical with above-mentioned first execution mode, is meant: with the earth terminal 12 of SAW duplexer 1 as shown in Figure 8, receive terminal 13, antenna terminal 14, send the electrode that terminal 15 engaged and be located at installation base plate 3.
In addition, by between IDT electrode 7 and element lid 20, forming hole 16, in the oscillation space that guarantees sound wave, also this oscillation space is remained on the state of hermetic seal.And in this second execution mode, each or per two IDT electrodes 7 are provided with element lid 20.
Use LiTaO 3As the material of parts substrate 6, use the material of aluminium as the IDT electrode, use and contain the material of the epoxy resin of filler as piece cover 9.As this filler, its containing ratio is about 80wt% with silica.The cradle portion 20a of element lid 20 uses light-sensitive polyimide, and the cap 20b of element lid 20 uses polyester fiber and polyethylene to clip the photosensitive dry film of the three-decker of photosensitive layer.In addition, also can use LiNbO 3As the material of parts substrate 6, with the material of the metal except that aluminium as IDT electrode 7.
Below, the originally manufacture method of the SAW duplexer 1 of second execution mode is described.
At first, as shown in figure 10, in the whole lower surface evaporation sputtered aluminum of parts substrate 6, afterwards, shown in Figure 11 A, with the electrode pattern of dry etch process formation such as IDT electrode 7 grades.
Because this Figure 11 A～Figure 11 F and follow-up Figure 12 A～Figure 12 F are the figure of the manufacture process of expression SAW duplexer 1, so, its expression be Fig. 1, the Fig. 2 of installment state of expression SAW duplexer 1 and the state that turns upside down of the SAW duplexer 1 shown in other figure.Just in Figure 11 A～Figure 11 F and explanation that Figure 12 A～Figure 12 F carries out, its direction is opposite with the above-below direction of in addition explanation.
Then, shown in Figure 11 B, on parts substrate 6 with method of spin coating coating light-sensitive polyimide layer 21, and place above it make can printing opacity corresponding to the part of the cradle portion 20a of element lid 20 mask 22, expose again, develop.Thus, shown in Figure 11 C, can form the cradle portion 20a of element lid 20.Afterwards, shown in Figure 11 D,, above parts substrate 6, place photosensitive dry film 23 by cradle portion 20a, and above this photosensitive dry film 23, place make can printing opacity corresponding to the part of the cap 20b of element lid 20 mask 24, expose again, develop.Like this, shown in Figure 11 E, form the element lid 20 that constitutes by cradle portion 20a and cap 20b.
Then, shown in Figure 11 F, on parts substrate 6, be coated with photoresist (negativity) 25 in the mode of cladding element lid 20, above this photoresist 25, so that the form of not exposing corresponding to the part of aftermentioned outside terminal connecting portion 26 (shown in Figure 12 B) is carried out mask with mask 28.Then, if expose, develop, shown in Figure 12 A, just hole 29 can be set in the part corresponding to outside terminal connecting portion 26 of photoresist 25.
Then, shown in Figure 12 B, with the part that Cu is filled into hole 29, form outside terminal connecting portion 26 with electroless plating.Afterwards, shown in Figure 12 C, dissolving photoresist 25 is put into mould with parts substrate 6.Then, shown in Figure 12 D, on parts substrate 6, flow into liquid-state epoxy resin (can become piece cover 9 later on), be heating and curing again with cladding element lid 20 and outside terminal connecting portion 26.
Then, shown in Figure 12 E, the epoxy resin that polishing forms this piece cover 9 exposes up to outside terminal connecting portion 26, thereby forms piece cover 9.Then, shown in Figure 12 F, externally dispose the electrode (earth terminal 12, reception terminal 13, antenna terminal 14, the transmission terminal 15 that engage with outer electrode 5 on the terminal connecting portion 26, but, only show earth terminal 12 in the drawings and received terminal 13, omitted antenna terminal 14 and sent terminal 15 demonstration in the drawings), finish SAW duplexer 1.
Then; as shown in Figure 9 (as above-mentioned; Fig. 9 compares and turns upside down with Figure 11 A～Figure 11 F and Figure 12 A～Figure 12 F); surface except the position that disposes electrode below piece cover 9, that engage with outer electrode 5 (earth terminal 12, reception terminal 13, antenna terminal 14, transmission terminal 15) is provided with the protective 10 that resin makes.This protective 10 preferentially is set to relative with hole 16.And, this protective 10 be by, in epoxy resin or polyimide resin, add modified rubber pliability resin, by the formation of methods such as printing such as the rubber of silicon rubber etc.
At last, the packaging process that covers the SAW duplexer 1 that is installed in installation base plate 3 with resin mould 4 is described.
At first, with installed as shown in Figure 1 SAW duplexer 1 and the compound electronic unit of other electronic unit 2a～2c put into mould, then, the resin mould 4 after this mould injects heating, pressurization, cooling forms then.In this second execution mode, use the epoxy resin that has disperseed filler in the resin mould 4, the injection condition of resin mould 4 is that resin temperature is 175 ℃, injection pressure is 50～100atm.And, use silica in the filler of this resin mould 4, its composite rate is 80wt%～90wt%.
Utilize said structure, the electronic unit encapsulation has improved the intensity of the external pressure when reply is handled with resin mould 4, can prevent the damage of electronic unit.The following describes its reason.
As shown in Figure 9, when resin mould 4 is filled between piece cover 9 and the installation base plate 3, applied very large upwarding pressure on the piece cover 9.But, because the protective that resin makes 10 is littler, promptly softer with resin mould 4 resilience in comparison modulus, so, be subjected to the pressure of resin mould 4 since then and be out of shape, thereby this pressure can be distributed to a plurality of directions.So, utilize protective 10, can cushion the stress that is applied to SAW duplexer 1 from the below of piece cover 9 and element lid 20.
And owing to be provided with protective 10, the space between SAW duplexer 1 and the installation base plate 3 diminishes, and can reduce the amount of the resin mould 4 that enters this space.Thus, can suppress stress from resin mould 4.
In addition; in this second execution mode; as described above; shadeless part at Fig. 8; promptly; except below the piece cover 9 with outer electrode 5 engaging portion (promptly; disposed earth terminal 12, received terminal 13, antenna terminal 14, sent the position of terminal 15) outside all parts protective 10 is set; but; at least except with outer electrode 5 engaging portion, the part of a part relative with hole 16 is provided with protective 10, so also can obtain same effect and effect.
And, because piece cover 9 is to be obtained by the epoxy resin that contains filler, can suppress the damage of electronic unit, improve the reliability of reply external pressure.
Therefore, when electronic unit applied external pressure, piece cover 9 was utilized on the one hand its resin part that to a certain degree strain can be arranged, thereby external pressure is distributed to a plurality of directions.On the other hand, utilize the filler part to cover 9 profile by holding member, suppress excessive strain.Therefore, the intensity of the reply external pressure of electronic unit encapsulation can increase, and reduces the damage of IDT electrode 7.
And, containing filler by making in the piece cover 9, can demonstrate than only forming also big hydrophobe under the situation of piece cover 9 with resin, corrode because of moisture thereby can suppress IDT electrode 7.
Yet, in this second execution mode, forming a plurality of IDT electrodes 7 on the parts substrate 6, each or per two IDT electrodes 7 form element lid 20.Form a plurality of element lids 20 like this, compare, can effectively suppress the damage of SAW duplexer 1 with the situation that an element lid 20 that covers whole IDT electrodes 7 is set.
That is, by a plurality of element lids 20 are set, hole 16 is cut apart, and forms partition wall 19 as shown in Figure 9 between a plurality of holes 16.So this partition wall 19 becomes pillar, can disperse external stress.The cracking that therefore, can suppress parts substrate 6 or piece cover 9 and element lid 20.In addition, this partition wall 19 can be in addition with formation in any way such as resins in hole 16.
And these a plurality of holes 16 also can form fully independently, also can the part connection with tubulose access path (showing especially among the figure) between the hole 16 of adjacency.By access path is set like this, when the part in hole 16 applied excessive external pressure, this external pressure can be dispersed to other hole 16 by access path.Therefore, can improve the intensity of the reply external pressure of electronic unit encapsulation.
And in this second execution mode, in order to realize thinner electronic unit, piece cover 9 is thinner than parts substrate 6.Therefore, piece cover 9 ruptures especially easily, is accompanied by the damage of this piece cover 9, and element lid 20 is damage easily also.So, because must improve the intensity of this piece cover 9, so need said structure.
(the 3rd execution mode)
Use the description of drawings third embodiment of the invention below.
The main difference point of this 3rd execution mode and aforementioned first execution mode is: as shown in figure 13, in order to form hole 16, in periphery junction surface 30 is set as the IDT electrode 7 of element, attachment substrate 6 and piece cover 9 by this junction surface 30, the part that this junction surface 30 surrounds is as hole 16.Other similar structure uses identical mark to describe, and omits its explanation.
The electronic unit encapsulation of this 3rd execution mode also has such structure: as shown in Figure 1, other electronic unit 2a～2c and SAW duplexer 1 have been installed on installation base plate 3, have been covered by resin mould 4.
So, constituting the SAW duplexer 1 that electronic unit encapsulates, its section comprises as shown in figure 13: parts substrate 6; Be configured in these parts substrate 6 lower surfaces a plurality of IDT electrodes 7 of (referring to the below shown in Figure 13, Figure 15 A～Figure 15 F, Figure 16 A～Figure 16 G, identical in the explanation of the 3rd execution mode) as element; And the piece cover 9 of coating member substrate 6 following sides, the lower surface of this piece cover 9 is provided with the protective 10 that resin makes.Outer electrode 5 is meant, and is identical with Fig. 8 of aforementioned first execution mode, with the earth terminal 12 of SAW duplexer 1 shown in Figure 17, receive terminal 13, antenna terminal 14, send terminal 15 and engage, and is arranged on the electrode of installation base plate 3.
And, be provided with junction surface 30 between this piece cover 9 and the IDT electrode 7, form hole 16 at piece cover 9 thickness owing to junction surface 30 in parts substrate 6 engages.The lower surface of piece cover 9 is provided with, the modulus of elasticity also littler than resin mould 4, i.e. softer protective 10.Junction surface 30 is, the first junction surface 30a (shown in Figure 15 D～Figure 15 F) that is located at parts substrate 6 sides engages with the second junction surface 30b that is located at piece cover 9 sides (shown in Figure 16 C～Figure 16 F) and obtains.
Below, with Figure 15 A～Figure 15 F and Figure 16 A～Figure 16 G the manufacture method that the electronic unit of this 3rd execution mode encapsulates is described.Figure 15 A～Figure 15 F and Figure 16 A～Figure 16 G are the figure of the manufacture process of expression SAW duplexer 1, and be opposite with Figure 12 A～Figure 12 F with earlier figures 11A～Figure 11 F, represents the identical above-below direction of Fig. 1, Fig. 2 with the installment state of representing SAW duplexer 1.
At first, shown in Figure 15 A, the whole lower surface evaporation sputtered aluminum of parts substrate 6 afterwards, is used dry etch process, forms the electrode pattern of IDT electrode 7 grades shown in Figure 14.
Then, shown in Figure 15 B, the whole lower surface coating resistance agent 31 of parts substrate 6.And, shown in Figure 15 C, form pattern, the feasible electrode part that is connected with reception terminal 13, antenna terminal 14, transmission terminal 15, the earth terminal 12 of Figure 17, and the outer regions of the parts substrate 6 of all IDT electrodes 7 of encirclement is exposed among Figure 14.Like this, in subsequent processing, can prevent that aluminium from being arrived between the IDT electrode 7 by evaporation, can guarantee the oscillation space of this IDT electrode 7 fully.
Then, shown in Figure 15 D, AM aluminum metallization is provided with the first junction surface 30a in aforementioned exposed portions serve to the whole surface of the resistance agent 31 of patterning., as Figure 15 E shown in from below polish thereafter, concordant with the height of the first junction surface 30a.At this moment, bigger concavo-convex because the surface behind the evaporation has, so preferably, the also polishing a little of lower surface to the first junction surface 30a makes smooth surface.This is in order to improve the zygosity with aftermentioned piece cover 9.
Next, parts substrate 6 is impregnated in the stripper etc. of resistance agent 31, makes resistance agent 31 dissolvings, shown in Figure 15 F, can form, the first junction surface 30a is higher slightly than IDT electrode 7.
On the other hand, as shown in figure 13, corrode the piece cover 9 that the side setting is made by silicon below parts substrate 6 because of oxidation or moisture in order to prevent IDT electrode 7.Below, with Figure 16 A～Figure 16 G the manufacture method of this piece cover 9 is described.
At first, shown in Figure 16 A, the entire upper surface of piece cover 9 coating resistance agent 31 forms such pattern: shown in Figure 16 B, resistance agent 31 remain in except with the first junction surface 30a engaging portion the position.Thereafter, shown in Figure 16 C, on the whole surface of piece cover 9, evaporation is the aluminium of the second junction surface 30b.
Then, shown in Figure 16 D, the surface of piece cover 9 is polished, concordant with the height of the second junction surface 30b.At this moment, identical with the first junction surface 30a, preferably, the also polishing a little of upper surface to the second junction surface 30b makes smooth surface.Afterwards, piece cover 9 is impregnated in the stripper etc. of resistance agent 31, makes resistance agent 31 dissolvings, thereby finish the such piece cover of Figure 16 E 9.
Then, the following describes the method that this piece cover 9 engages with parts substrate 6.
At first, shown in Figure 16 F, position, the feasible first junction surface 30a that is located at the lower surface of parts substrate 6 engages with the second junction surface 30b of the upper surface that is located at piece cover 9.Then, it is clean that plasma treatment is carried out on this first junction surface 30a and the second junction surface 30b composition surface separately.Afterwards, in 200 ℃ of heating, pressurization lightly shown in Figure 16 G, makes formation junction surface 30 takes place between win junction surface 30a and the second junction surface 30b to combine between direct atom.
Next, as shown in figure 18, for electrode (earth terminal 12 of Figure 17 and Figure 18, reception terminal 13, antenna terminal 14, the transmission terminal 15 that makes the lower surface that is located at piece cover 9, but, only shown earth terminal 12 and antenna terminal 14 among Figure 18) be connected with each electrode that is located at parts substrate 6, form through hole 17 with dry etch process.In addition, Figure 18 is the figure of B-B section among expression Figure 17.Thereafter, evaporation Ti, Ni, Au successively in the inboard of this through hole 17 are filled into solder printing the inside of this vapor-deposited film again, form outside terminal connecting portion 32.
Then, as shown in figure 13,, on all surfaces except the position that disposes the electrode that engages with outer electrode 5, the protective 10 that resin makes is set at the lower surface of piece cover 9.This protective 10 be by, in epoxy resin or polyimide resin, add modified rubber pliability resin, by the formation of methods such as printing such as the rubber of silicon rubber etc.Thereafter, as shown in figure 17, on the lower surface of piece cover 9, on the hypographous position, the electrode that configuration engages with outer electrode 5, promptly, the earth terminal 12 of Fig. 7 and Figure 18, reception terminal 13, antenna terminal 14, transmission terminal 15, thus SAW duplexer 1 finished.
Explanation at last as shown in Figure 1, covers the packaging process of the SAW duplexer 1 that is installed in installation base plate 3 with resin mould 4.
At first, the compound electronic unit that SAW duplexer 1 and other electronic unit 2a～2c have been installed is put into mould, then, inject heated mold resin 4, cooling forming then to this mould.In this 3rd execution mode, use the epoxy resin that has disperseed filler in the resin mould 4, the injection condition of resin mould 4 is that resin temperature is 175 ℃, injection pressure is 50～100atm.And, use silica in the filler of this resin mould 4, its composite rate is 80wt%～90wt%.
Utilize aforementioned structure, the intensity of the reply external pressure when the electronic unit encapsulation has improved with resin mould 4 processing can prevent the damage of electronic unit.The following describes its reason.
Shown in Figure 13, when resin mould 4 is filled between piece cover 9 and the installation base plate 3, applied very large upwarding pressure on the piece cover 9.But, because the protective that resin makes 10 is littler, promptly softer with resin mould 4 resilience in comparison modulus, so, be subjected to the pressure of resin mould 4 since then and be out of shape, thereby this pressure can be distributed to horizontal direction.So, utilize protective 10, can cushion the stress that is applied to SAW duplexer 1 from piece cover 9 belows.
And owing to be provided with protective 10, the space between SAW duplexer 1 and the installation base plate 3 diminishes, and can reduce the amount of the resin mould 4 that enters this space.Thus, can suppress stress from resin mould 4.
Part the position of the reception terminal 13 that engages with outer electrode 5 except configuration in the lower surface of piece cover 9, antenna terminal 14, transmission terminal 15, earth terminal 12 all is provided with protective; but; at least except with outer electrode 5 engaging portion, the part of a part relative with hole 16 is provided with protective 10, so also can obtain same effect and effect.
And, in this 3rd execution mode, between a plurality of IDT electrodes 7 junction surface 30 being arranged, the partition wall in segmentation hole 16 is played at this junction surface 30.So when the upper and lower of SAW duplexer 1 applied external pressure from resin mould 4 grades, this partition wall became pillar, can disperse this stress, therefore can improve the intensity of reply external pressure of the encapsulation of SAW duplexer 1.
And in this 3rd execution mode, in order to realize thinner electronic unit, piece cover 9 is thinner than parts substrate 6.Therefore, piece cover 9 ruptures especially easily, must improve the intensity of this piece cover 9.Therefore, so need said structure and parts.
Industrial applicibility
Because electronic component package of the present invention can improve the intensity of the reply external pressure of electronic component package, Can prevent the damage of electronic unit, so, transfer modling treatment process that can be under condition of high voltage Deng in utilize greatly. So the present invention is very big in the industrial possibility of being utilized.

Claims (5)

1, a kind of electronic unit encapsulation, it comprises:
Installation base plate;
Be configured in the outer electrode on the described installation base plate;
Electronic unit, it is installed on the described installation base plate by described outer electrode; And
On described installation base plate, cover the resin mould of described electronic unit,
Described electronic unit comprises:
The parts substrate;
Element, it is configured in the surface towards described installation base plate of described parts substrate; And,
Piece cover, it covers the face side towards described installation base plate of described parts substrate,
Described piece cover is having the hole with described element part in opposite directions,
With the little protective of described resin mould resilience in comparison modulus, be arranged on, except with described outer electrode engaging portion, with the surface towards described installation base plate of described hole piece cover in opposite directions.
2, electronic unit encapsulation according to claim 1, wherein,
Described protective is formed by resin or rubber.
3, electronic unit encapsulation according to claim 1, wherein,
Described parts substrate with described element part in opposite directions, be provided with recess, described hole utilizes described recess to form.
4, electronic unit encapsulation according to claim 1, wherein,
Described hole covers described element with the element lid and forms.
5, electronic unit encapsulation according to claim 1, wherein,
The periphery of described element is provided with the junction surface, by described junction surface described parts substrate is engaged with described piece cover, and described hole is formed on the part of being surrounded by described junction surface.
CN2006800016323A 2005-11-02 2006-10-30 Electronic component package Active CN101091313B (en)

Applications Claiming Priority (7)

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JP2005319059 2005-11-02
JP319059/2005 2005-11-02
JP2005364597 2005-12-19
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JP029370/2006 2006-02-07
JP2006029370 2006-02-07
PCT/JP2006/321638 WO2007052597A1 (en) 2005-11-02 2006-10-30 Electronic component package

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