WO2007052597A1 - Electronic component package - Google Patents
Electronic component package Download PDFInfo
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- WO2007052597A1 WO2007052597A1 PCT/JP2006/321638 JP2006321638W WO2007052597A1 WO 2007052597 A1 WO2007052597 A1 WO 2007052597A1 JP 2006321638 W JP2006321638 W JP 2006321638W WO 2007052597 A1 WO2007052597 A1 WO 2007052597A1
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- WIPO (PCT)
- Prior art keywords
- component
- cover
- electronic component
- substrate
- saw duplexer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to an electronic component package.
- a surface acoustic wave (hereinafter referred to as “SAW”) device package which is an example of a conventional electronic component package, includes a component substrate 101 and a component substrate 101 as shown in FIG. IDT (Interdigital Transducer) electrode 102 as an element formed on the lower surface of FIG. 19 (the lower surface in FIG. 19 and facing the mounting substrate 105 described later), and the portion facing this IDT electrode 102
- a component cover 104 having a recess 103 and an external electrode 106 for joining the component cover 104 and the mounting substrate 105 are provided.
- JP 2000-261 284, JP 2001-244785, JP 2003-110391, JP 20 No. 05-318157 is known.
- the component cover 104 is provided with a recess 103 so that the component cover 104 and the plurality of IDT electrodes 102 do not come into contact with each other. It is becoming thinner. Therefore, when this SAW device is mounted on the mounting board 105 and covered with mold grease, the pressure of the mold grease entering between the component cover 104 and the mounting board 105 is very high. The cover 104 was damaged.
- the present invention increases the strength of the electronic component package against external pressure and prevents damage.
- the present invention provides an electronic component package in which an electronic component mounted on a mounting substrate via an external electrode disposed on the mounting substrate is covered with a mold grease.
- the product has a component cover that covers the elements placed on the lower surface of the component substrate (the surface facing the mounting substrate) and forms a cavity.
- the lower surface of the component cover (the surface facing the mounting substrate) A protector having an elastic modulus smaller than that of the mold resin is provided on the portion facing the cavity excluding the joint portion of the external electrode.
- an electronic component package of the present invention includes a mounting substrate, an external electrode disposed on the mounting substrate, an electronic component mounted on the mounting substrate via the external electrode, and the electronic component on the mounting substrate.
- the electronic component is a component cover that covers a component substrate, an element disposed on a surface of the component substrate facing the mounting substrate, and a surface side of the component substrate facing the mounting substrate.
- the part cover has a cavity in the direction facing the element and has a cavity, and the part cover facing the cavity excluding the joint part of the external electrode has a smaller elastic modulus than the mold resin on the surface facing the mounting board.
- a protective body is provided.
- the lower surface of the component cover is provided with the protector having a smaller elastic modulus than the mold resin. It is elastically deformed by receiving the pressure applied by the downward force at the time of mold resin filling, and this pressure can be dispersed in the lateral direction. Therefore, the external force can also buffer the stress applied to the electronic component.
- the present invention can increase the strength of the electronic component package with respect to pressure and prevent damage.
- FIG. 1 is a perspective view of an electronic component package according to a first embodiment.
- FIG. 2 is a cross-sectional view of the electronic component package in the first embodiment.
- FIG. 3 is a bottom view of a component board constituting the electronic component knockout according to the first embodiment.
- FIG. 4 is a circuit diagram of a SAW duplexer constituting the electronic component rack according to the first embodiment.
- FIG. 5 is a bottom view of a component cover constituting the electronic component rack according to the first embodiment.
- FIG. 6 is a sectional view of the SAW duplexer according to the first embodiment.
- FIG. 7 is a top view of a mask forming a component cover in the first embodiment.
- FIG. 8 is a bottom view of the component cover in the first embodiment.
- FIG. 9 is a cross-sectional view of the electronic component package in the second embodiment.
- FIG. 10 is a bottom view of a component board constituting an electronic component nodule / cage in the second embodiment.
- FIG. 11A is a first diagram showing a manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 11B is a second diagram showing the manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 11C is a third diagram illustrating the SAW duplexer manufacturing process according to the second embodiment.
- FIG. 11D is a fourth diagram showing a manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 11E is a fifth diagram showing a manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 11F is a sixth diagram showing the manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 12A is a seventh diagram showing the manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 12B is an eighth diagram illustrating a SAW duplexer manufacturing process according to the second embodiment.
- FIG. 12C is a ninth diagram illustrating the SAW duplexer manufacturing process according to the second embodiment.
- FIG. 12D is a tenth view showing a manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 12E is an eleventh view showing a manufacturing process of the SAW duplexer in the second embodiment.
- FIG. 12F shows the SAW duplexer manufacturing process according to the second embodiment.
- FIG. 13 is a cross-sectional view of the electronic component package in the third embodiment.
- FIG. 14 is a bottom view of a component board constituting an electronic component nodule / cage in Embodiment 4.
- FIG. 15A is a first diagram showing a SAW duplexer manufacturing process according to Embodiment 3.
- FIG. 15B is a second diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 15C is a third diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 15D is a fourth diagram showing a manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 15E is a fifth diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 15F is a sixth diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 16B is an eighth diagram showing a SAW duplexer manufacturing process according to the third embodiment.
- FIG. 16D is a tenth view showing a manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 16E is an eleventh view showing a manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 16F is a twelfth diagram showing the SAW duplexer manufacturing process according to the third embodiment.
- FIG. 16G is a thirteenth view showing a manufacturing process of the SAW duplexer in the third embodiment.
- FIG. 17 is a bottom view of the component cover in the third embodiment.
- FIG. 18 is a cross-sectional view of the SAW duplexer according to the third embodiment.
- FIG. 19 is a cross-sectional view of a conventional electronic component package.
- Embodiment 1 of the present invention will be described by taking as an example an elastic wave device 1 for an antenna duplexer (hereinafter referred to as “SAW duplexer 1”) as an electronic component.
- SAW duplexer 1 an elastic wave device 1 for an antenna duplexer
- the SAW duplexer 1 constituting the electronic component package is arranged on the mounting substrate 3 together with the other electronic components 2a to 2c, as shown in FIG. ing. As shown in FIG. 2, the SAW duplexer 1 is mounted on the mounting substrate 3 via the external electrode 5 disposed on the mounting substrate 3 and covered with the mold resin 4. [0014] The SAW duplexer 1 is arranged on the component board 6 and the lower surface of the component board 6 (the lower side in FIG. 2 and the side facing the mounting board 3; the same applies hereinafter).
- the IDT electrode 7 as a plurality of elements and a component cover 9 that covers the lower surface side of the component substrate 6 and has a recess 8 in a portion facing the IDT electrode 7 are provided on the lower surface of the component cover 9. ⁇ A protective body 10 made of resin is provided.
- the external electrode 5 is an electrode provided on the mounting board 3 that is joined to the ground terminal 12, the receiving terminal 13, the antenna terminal 14, and the transmitting terminal 15 of the SAW duplexer 1 shown in FIG. Will be described later.
- the IDT electrode 7 and the groove 11 are formed on the lower surface of the component substrate 6 to form the circuit of the SAW duplexer 1 shown in FIG.
- a reflector having a short-circuit electrode arranged in parallel is arranged at both ends of the IDT electrode 7, but this is simplified.
- the groove 11 is formed by dry etching.
- the material of the component board 6 LiTaO
- IDT electrode 7 is made of a metal material such as aluminum.
- the receiving terminal 13, antenna terminal 14, transmitting terminal 15, and ground terminal 12 in the circuit of the SAW duplexer 1 shown in FIG. 3 are the receiving terminal 13, antenna terminal 14, transmitting terminal 15, and ground on the bottom surface of the component board 6 shown in FIG. Corresponds to terminal 12.
- a component cover 9 made of silicon is provided on the lower surface side of the component substrate 6 as shown in FIG.
- FIG. 2 shows the AA cross section in FIG.
- the component cover 9 is formed with a recess 8 at the portion facing the IDT electrode 7 described above by dry etching force.
- a cavity 16 that prevents the IDT electrode 7 from coming into contact with the component cover 9 can be formed between the component cover 9 and the IDT electrode 7.
- a vibration space can be secured.
- FIGS. 2 and 5 by providing a cavity 16 for each one or two adjacent IDT electrodes 7, the area of the part cover 9 can be reduced, and as a result, Strength against external pressure can be increased.
- the mask 18 is removed, and SiO is applied to the entire lower surface of the component substrate 6 shown in FIG.
- SiO remains only in the part where there is no photosensitive resin, that is, the part other than the IDT electrode 7 and the through hole 17.
- a SAW duplexer 1 as shown in FIG. 6 can be formed.
- the process of bonding the component cover 9 is performed in a vacuum, but the component cover 9 and the component board 6 can be bonded using an adhesive, in which case the nitrogen atmosphere or the oxygen atmosphere is used. Can be done.
- the cavity 16 in FIG. 2 in Embodiment 1 is a very small space, so the amount of oxygen in the cavity 16 is very small. Only a thin metal oxide film is formed on the surface of the pole 7, but rather it becomes an acid.
- FIG. 6 shows a through hole 17 for connecting the external electrode 5 and the component substrate 6 shown in FIG. 2 is formed in the component cover 9.
- This through hole 17 can be formed by dry etching.
- FIG. 6 shows a BB cross section in FIG.
- the protective body 10 made of resin shown in Fig. 2 is provided.
- the protective body 10 is an epoxy resin, or a rubber-modified flexible resin in which a rubber such as silicone rubber is added to a polyimide resin by printing or the like.
- an uncoated composite electronic component on which the SAW duplexer 1 and the plurality of electronic components 2a to 2c in FIG. 1 are mounted is placed in a mold, and then heated mold resin 4 is injected into the mold. Then, it is cooled and molded.
- an epoxy resin in which a filler is dispersed is used for the mold resin 4, and the injection condition of the mold resin 4 is a resin temperature of 175 ° C. and an injection pressure of 50 to: LOOatm.
- the protector 10 By providing the protector 10, the space between the SAW duplexer 1 and the mounting substrate 3 is reduced, and the amount of mold resin 4 entering the space can be reduced. Therefore, the stress from the mold resin 4 can be suppressed.
- the strength of the SAW duplexer 1 against the pressure of the package can be increased and damage can be prevented.
- the protector is not hatched as shown in FIG. 8, that is, the joint with the external electrode 5 on the lower surface of the component cover 9 (ground terminal 12). Provided at all locations except receiving terminal 13, antenna terminal 14 and transmitting terminal 15), but at least at a part facing cavity 16 excluding the junction with external electrode 5. Thus, the same effect can be obtained.
- a plurality of IDT electrodes 7 are formed on the component substrate 6 as shown in FIG. 3, and one or two IDT electrodes 7 are formed as shown in FIG. A recess is formed every time, but by forming a plurality of recesses 8 in this way, damage to the SAW duplexer 1 is more effective than when one recess 8 is provided to cover all IDT electrodes 7. Can be suppressed. That is, the cavity 16 is divided by providing the plurality of recesses 8, and a partition wall 19 shown in FIG. 2 is formed between the plurality of cavities 16. And this partition wall 19 becomes a support pillar, and can distribute an external stress. Therefore, cracking of the component board 6 or the component cover 9 can be suppressed.
- the partition wall 19 may be arbitrarily formed in the cavity 16 by using a separate oil or the like.
- the plurality of cavities 16 may be formed by being completely divided, but adjacent cavities 16 may be partially connected by a tunnel-shaped communication path (not shown).
- a tunnel-shaped communication path By providing the communication path in this way, when an excessive external pressure is applied to a part of the cavity 16, the external pressure can be distributed to other cavities 16 via the communication path. As a result, the strength of the electronic component nozzle / cage with respect to the external pressure can be improved.
- this communication path may be provided on the component substrate 6 or may be provided on the component cover 9. If the communication path is provided on the component board 6, the groove 11 on the lower surface of the component board 6 shown in FIG. 4 may be used as the communication path.
- the IDT electrode 7 serving as an element is formed below the IDT electrode 7 in order to form the cavity 16 (below in FIG.
- the element cover 20 that covers the side facing the mounting board 3 (the same applies hereinafter) is used, and other similar configurations will be described using the same reference numerals, and the description will be simplified.
- the SAW duplexer 1 constituting the electronic component package includes a component substrate 6 and IDT electrodes as a plurality of elements arranged on the lower surface of the component substrate 6, as shown in FIG. 7, the element cover 20 covering the lower surface side of the IDT electrode 7, the component cover 9 covering the entire lower surface of the component board 6 including the element cover 20, and the protective resin made on the lower surface of the component cover 9 It has a structure with 10 bodies.
- the external electrode 5 is the same as in the first embodiment described above, the ground terminal 12 of the SAW duplexer 1 shown in FIG. 3. Refers to the electrode on the mounting board 3 where the antenna terminal 14 and the transmission terminal 15 are joined.
- an element cover 20 is provided for each one or two IDT electrodes 7! /.
- LiTaO as the material of the component substrate 6 aluminum as the material of the IDT electrode
- epoxy resin containing filler was used as a material for the component cover 9.
- silicon oxide was used, and the content was about 80 wt%.
- the frame 20a of the element cover 20 is made of photosensitive polyimide, and the lid 20b of the element cover 20 is made of a photosensitive dry film having a three-layer structure in which a photosensitive layer is sandwiched between polyester and polyethylene.
- LiNbO is used as the material for the component board 6.
- the IDT electrode 7 can be made of a metal other than aluminum.
- a photosensitive polyimide layer 21 is applied onto the component substrate 6 by spin coating, and further, light passes through a portion corresponding to the frame portion 20a of the element cover 20 above it. Put the mask 22 on, expose and develop.
- the frame portion 20a of the element cover 20 can be formed as shown in FIG. 11C.
- the photosensitive dry film 23 is placed above the component substrate 6 through the frame portion 20a, and further corresponds to the lid portion 20b of the element cover 20 above the photosensitive dry film 23.
- a mask 24 that allows light to pass through, and expose and develop.
- FIG. 11E the element force composed of the frame portion 20a and the lid portion 20b is obtained. Bar 20 is formed.
- a photosensitive resist (negative type) 25 is applied on the component substrate 6 so as to cover the element cover 20, and the upper side of the photosensitive resist 25 is connected to an external terminal to be described later.
- a hole 29 can be provided in a portion corresponding to the external terminal connecting portion 26 of the photosensitive resist 25 as shown in FIG. 12A.
- the hole 29 is filled with Cu by electroless plating to form the external terminal connection portion 26.
- the photosensitive resist 25 is dissolved, and the component substrate 6 is placed in a mold.
- a liquid epoxy resin (which will later become the component cover 9) is poured onto the component substrate 6 so as to cover the element cover 20 and the external terminal connection portion 26, and is thermally cured.
- the epoxy resin forming the component cover 9 is polished until the external terminal connection portion 26 is exposed, thereby forming the component cover 9. Then, as shown in FIG. 12F, the electrode joined to the external electrode 5 on the external terminal connection portion 26 (the ground terminal 12, the reception terminal 13, the antenna terminal 14, the transmission terminal 15, but only the ground terminal 12 and the reception terminal 13 If the antenna terminal 14 and the transmission terminal 15 are not shown in the drawing, the SAW duplexer 1 is completed.
- FIG. 9 As shown in FIG. 9 (as described above, FIG. 9 and FIGS. 11A to F and FIGS. 12A to F are upside down), external electrodes on the bottom surface of the component cover 9
- a protective body 10 made of resin is provided on the surface excluding the place where the electrodes (ground terminal 12, receiving terminal 13, antenna terminal 14, transmitting terminal 15) to be joined to 5 are arranged. It is desirable to provide the protector 10 so as to face the cavity 16 in particular.
- the protective body 10 is formed by printing or the like a rubber-modified flexible resin obtained by adding a rubber such as a silicone rubber to an epoxy resin or a polyimide resin.
- a composite electronic component in which a SAW duplexer 1 and other electronic components 2a to 2c as shown in Fig. 1 are mounted is placed in a mold, and then the mold is heated and pressurized in this mold. Oil Inject 4 and then cool to form.
- the mold resin 4 is an epoxy resin in which a filler is dispersed, and the injection conditions of the mold resin 4 are a resin temperature of 175 ° C. and an injection pressure of 50 to 100 atm. .
- silicon oxide was used for the mold resin 4 filler, and the mixing ratio was 80 wt% to 90 wt%.
- the electronic component package is improved in strength against external pressure during molding by the mold resin 4, and damage to the electronic component can be prevented. The reason is explained below.
- the protective body 10 made of resin has a smaller elastic modulus than the mold resin 4, that is, is softer, so it deforms when receiving pressure from the mold resin 4 and can disperse the pressure in multiple directions. . Therefore, the stress applied to the SAW duplexer 1 from below the component cover 9 and the element cover 20 can be buffered by the protector 10.
- the protector 10 If the protector 10 is provided, the space between the SAW duplexer 1 and the mounting substrate 3 is reduced, and the amount of the mold resin 4 entering the space can be reduced. Therefore, the stress from the mold resin 4 can be suppressed.
- the protector 10 is not hatched as shown in FIG. 8 as described above, that is, the joint portion with the external electrode 5 on the lower surface of the component cover 9 (ie, (Where the ground terminal 12, receiving terminal 13, antenna terminal 14, and transmitting terminal 15 are placed), but at least facing the cavity 16 except for the junction with the external electrode 5.
- the component cover 9 can be elastically deformed to some extent by the portion of the grease on the one hand, and the external pressure can be distributed in multiple directions.
- the outer shape of the component cover 9 can be maintained by the portion of the filler, and excessive elastic deformation can be suppressed. As a result, outside the electronic component package The strength against pressure is increased, and damage to the IDT electrode 7 can be reduced.
- the component cover 9 is more hydrophobic than the case where the component cover 9 is formed only with a resin, and the IDT electrode 7 can be prevented from corroding due to moisture. .
- a plurality of IDT electrodes 7 are formed on the component substrate 6, and an element cover 20 is formed for each one or two IDT electrodes 7.
- the cavity 16 is divided by providing a plurality of element covers 20, and a partition wall 19 shown in FIG. 9 is formed between the plurality of cavities 16. And this partition wall 19 becomes a support
- the partition wall 19 may be arbitrarily formed in the cavity 16 by using a separate resin or the like! /.
- the plurality of cavities 16 may be formed by being completely divided, but adjacent cavities 16 may be partially connected by a tunnel-like communication path (not shown).
- a tunnel-like communication path (not shown).
- the component cover 9 is thinner than the component substrate 6 in order to reduce the height of the electronic component. Therefore, the component cover 9 is easily damaged, especially when the component cover 9 is cracked or damaged immediately. Therefore, since it is necessary to improve the strength of the component cover 9, the above-described configuration is required.
- the main difference between the third embodiment and the first embodiment described above is that, as shown in FIG. 13, in order to form the cavity 16, an adhesive portion is formed on the outer periphery of the IDT electrode 7 as an element. 30, and the component board 6 and the component cover 9 are bonded to each other through the bonding portion 30 and surrounded by the bonding portion 30. This is the point where the rare part is used as a cavity 16.
- Other similar configurations will be described using the same reference numerals, and the description will be simplified.
- SAW duplexer 1 is mounted on mounting substrate 3 together with other electronic components 2a to 2c, and these are covered with mold resin 4. As a structured structure.
- the SAW duplexer 1 constituting the electronic component package has a cross-section as shown in FIG. 13, and a component substrate 6 and a lower surface of the component substrate 6 (see FIGS. 13, 15A to F, and FIGS. 16A to G).
- the IDT electrode 7 as a plurality of elements arranged in the lower part of the figure and the same as in the description of the embodiment 3) and the component cover 9 covering the lower surface side of the component substrate 6 are provided.
- a protective member 10 made of resin is provided on the lower surface of 9.
- the external electrode 5 is a mounting in which the ground terminal 12, the reception terminal 13, the antenna terminal 14, and the transmission terminal 15 of the SAW duplexer 1 shown in FIG. Refers to the electrode provided on the substrate 3.
- an adhesive portion 30 is provided between the component cover 9 and the IDT electrode 7, and a cavity 16 is formed by the thickness of the adhesive portion 30 when the component cover 9 and the component substrate 6 are joined.
- a protective body 10 having a smaller elastic modulus than the mold resin 4, that is, softer is provided.
- the bonding part 30 includes a first bonding part 30a (shown in FIGS. 15D to F) provided on the component substrate 6 side and a second bonding part 30b (shown in FIGS. 16C to F) provided on the component cover 9 side. Are joined.
- FIGS. 15A to 15F and 16A to G are diagrams showing the manufacturing process of SAW duplexer 1.
- FIG. 15A-F shows mounting state of SA W duplexer 1. 1. The same vertical direction as in Fig. 2 is shown.
- an electrode pattern such as an IDT electrode 7 is formed by a dry etching cabinet as shown in FIG. To do.
- a resist 31 is applied to the entire lower surface of the component substrate 6.
- the receiving terminal 13, antenna terminal 14, transmitting terminal 15 The electrode portion to which the terminal 12 is connected and the outer peripheral region of the component board 6 surrounding all the IDT electrodes 7 in FIG. 14 are patterned so as to be exposed. This is to prevent aluminum from being deposited until just before the IDT electrode 7 in the next step, and to ensure a sufficient vibration space for the IDT electrode 7.
- the first adhesive portion 30a is slightly higher than the IDT electrode 7 as shown in FIG. 15F. Can be formed.
- a component cover 9 made of silicon is provided on the lower surface side of the component substrate 6. A method for manufacturing the component cover 9 will be described below with reference to FIGS.
- a resist 31 is applied to the entire upper surface of the component cover 9 and is patterned so that the resist 31 remains except for the portion to be joined to the first adhesive portion 30a as shown in FIG. 16B.
- an aluminum film is deposited on the entire surface of the component cover 9 to serve as the second adhesive portion 30b.
- first adhesive portion 30a provided on the lower surface of the component substrate 6 and the second adhesive portion 30b provided on the upper surface of the component cover 9 are joined.
- the bonding surfaces of the first adhesive portion 30a and the second adhesive portion 30b are cleaned by plasma treatment.
- light pressure is applied while heating to 200 ° C., and the first bonded portion 30a and the second bonded portion 30b are directly bonded between atoms as shown in FIG. 16G, thereby forming the bonded portion 30.
- the protective body 10 made of resin is provided on the entire bottom surface of the component cover 9 except for the place where the electrode to be joined to the external electrode 5 is disposed.
- This protective body 10 is formed by printing or the like a rubber-modified flexible resin in which rubber such as silicone rubber is applied to epoxy resin or polyimide resin.
- the electrode joined to the external electrode 5 at the position where the bottom surface of the component cover 9 is marked that is, the ground terminal 12, the reception terminal 13, the antenna terminal 14, the antenna terminal 14, If the transmission terminal 15 is arranged, the SAW duplexer 1 is completed.
- a composite electronic component in which the SAW duplexer 1 and other electronic components 2a to 2c are mounted is placed in a mold, and then a heated mold resin 4 is injected into the mold, and then cooled. Mold.
- epoxy resin in which a filler is dispersed is used as mold resin 4
- the injection conditions of mold resin 4 are as follows: resin temperature is 175 ° C., injection pressure is 50 to: LOOatm .
- silicon oxide was used for the filler of this mold resin 4, and the mixing ratio was 80 wt% to 90 wt%.
- the electronic component package is improved in strength against the external pressure during the molding with the mold resin 4, and damage to the electronic component can be prevented. The reason is explained below.
- the mold resin 4 is filled between the component cover 9 and the mounting board 3.
- the protective body 10 made of resin has a lower elastic modulus than the mold resin 4, that is, is softer, and therefore receives pressure from the mold resin 4. And the pressure can be dispersed in the lateral direction. Therefore, the downward force of the component cover 9 can also buffer the stress applied to the SAW duplexer 1 by the protector 10.
- the protector 10 is provided, the space between the SAW duplexer 1 and the mounting substrate 3 is reduced, and the amount of mold resin 4 that enters the space can be reduced. Therefore, the stress from the mold resin 4 can be suppressed.
- a protective body was provided on the entire surface except for the place where the receiving terminal 13, the antenna terminal 14, the transmitting terminal 15, and the ground terminal 12 to be joined from the lower surface of the component cover 9 were disposed. However, by providing at least a portion facing the cavity 16 excluding the joint portion of the external electrode 5, the same effect can be obtained.
- the partition wall can be used as a support column to disperse the stress and improve the strength of SAW duplexer 1 against the external pressure. It can be made.
- the component cover 9 is thinner than the component substrate 6 in order to reduce the height of the electronic component. Therefore, it is necessary to improve the strength of the component cover 9 especially when the component cover 9 is cracked. Therefore, the above-described configuration and means are required.
- the electronic component package according to the present invention can improve the strength against external pressure of the electronic component package and prevent the electronic component from being damaged, the electronic component package can be greatly used for a transfer mold cleaning process under a high-pressure condition. It is. Therefore, the industrial applicability of the present invention is extremely large.
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Abstract
An electronic component package with increased strength against external pressure. In the electronic component package where an electronic component mounted on a packaging substrate through an external electrode placed thereon is resin molded, the electronic component has a component cover for forming a cavity by covering an element placed on the lower surface of a component substrate, and a protective body having a smaller modulus of elasticity than the mold resin is provided at a portion on the lower surface of the component cover, which portion faces that portion of the cavity which excludes the joint to the external electrode.
Description
明 細 書 Specification
電子部品パッケージ Electronic component package
技術分野 Technical field
[0001] 本発明は電子部品パッケージに関するものである。 [0001] The present invention relates to an electronic component package.
背景技術 Background art
[0002] 従来の電子部品パッケージの一例である、表面弾性波(以下、「SAW」という)装置 のパッケージは、その断面図を図 19に示すように、部品基板 101と、この部品基板 1 01の下面(図 19における下方であって、後述する実装基板 105と対向する側の面を いう)に形成した素子としての IDT(Interdigital Transducer)電極 102と、この ID T電極 102と対向する部分に凹部 103を有する部品カバー 104と、この部品カバー 1 04と実装基板 105とを接合する外部電極 106とを有する。なお、このような従来の電 子部品パッケージに関連する先行技術文献情報としては、例えば特開 2000— 261 284号公報、特開 2001— 244785号公報、特開 2003— 110391号公報、特開 20 05— 318157号公報などが知られている。 A surface acoustic wave (hereinafter referred to as “SAW”) device package, which is an example of a conventional electronic component package, includes a component substrate 101 and a component substrate 101 as shown in FIG. IDT (Interdigital Transducer) electrode 102 as an element formed on the lower surface of FIG. 19 (the lower surface in FIG. 19 and facing the mounting substrate 105 described later), and the portion facing this IDT electrode 102 A component cover 104 having a recess 103 and an external electrode 106 for joining the component cover 104 and the mounting substrate 105 are provided. As prior art document information relating to such a conventional electronic component package, for example, JP 2000-261 284, JP 2001-244785, JP 2003-110391, JP 20 No. 05-318157 is known.
[0003] し力しながら、従来の電子部品ノ ッケージでは、モールド樹脂加工時の圧力衝撃 に耐え切れな 、ことがあった。 [0003] However, the conventional electronic component knockout sometimes cannot withstand the pressure shock during the molding resin processing.
[0004] すなわち、部品カバー 104には、この部品カバー 104と複数の IDT電極 102とが接 触しないように、凹部 103が設けられており、この凹部 103がある部分は部品カバー 1 04が非常に薄くなつている。そのため、この SAW装置を実装基板 105上に実装して モールド榭脂で被覆する場合、部品カバー 104と実装基板 105との間に入り込んだ モールド榭脂の圧力が非常に大きいことに起因し、部品カバー 104が損傷してしまう のであった。 [0004] That is, the component cover 104 is provided with a recess 103 so that the component cover 104 and the plurality of IDT electrodes 102 do not come into contact with each other. It is becoming thinner. Therefore, when this SAW device is mounted on the mounting board 105 and covered with mold grease, the pressure of the mold grease entering between the component cover 104 and the mounting board 105 is very high. The cover 104 was damaged.
発明の開示 Disclosure of the invention
[0005] そこで本発明は、電子部品パッケージの外圧に対する強度を上げ、損傷を防止す るものである。 [0005] Therefore, the present invention increases the strength of the electronic component package against external pressure and prevents damage.
[0006] そのために、本発明は、実装基板上に配置された外部電極を介して実装基板上に 実装された電子部品をモールド榭脂で覆った電子部品ノ ッケージにぉ 、て、電子部
品は部品基板の下面 (実装基板と対向する側の面)に配置されている素子を覆いキ ャビティを形成する部品カバーを有し、部品カバーの下面 (実装基板と対向する側の 面)における外部電極の接合部分を除くキヤビティに対向する部分に、モールド榭脂 より弾性率の小さい保護体を設けるものである。 [0006] To this end, the present invention provides an electronic component package in which an electronic component mounted on a mounting substrate via an external electrode disposed on the mounting substrate is covered with a mold grease. The product has a component cover that covers the elements placed on the lower surface of the component substrate (the surface facing the mounting substrate) and forms a cavity. The lower surface of the component cover (the surface facing the mounting substrate) A protector having an elastic modulus smaller than that of the mold resin is provided on the portion facing the cavity excluding the joint portion of the external electrode.
[0007] すなわち、本発明の電子部品パッケージは、実装基板と、実装基板上に配置され た外部電極と、外部電極を介して実装基板上に実装された電子部品と、電子部品を 実装基板上において被覆したモールド榭脂とを備え、電子部品は、部品基板と、部 品基板の実装基板に対向する面に配置されている素子と、部品基板の実装基板に 対向する面側を覆う部品カバーを有し、部品カバーは素子と向力 、あう部分にキヤビ ティがあり、外部電極の接合部分を除くキヤビティに対向する部品カバーの実装基板 に対向する面にはモールド榭脂より弾性率の小さい保護体を設けたものである。 That is, an electronic component package of the present invention includes a mounting substrate, an external electrode disposed on the mounting substrate, an electronic component mounted on the mounting substrate via the external electrode, and the electronic component on the mounting substrate. The electronic component is a component cover that covers a component substrate, an element disposed on a surface of the component substrate facing the mounting substrate, and a surface side of the component substrate facing the mounting substrate. The part cover has a cavity in the direction facing the element and has a cavity, and the part cover facing the cavity excluding the joint part of the external electrode has a smaller elastic modulus than the mold resin on the surface facing the mounting board. A protective body is provided.
[0008] 上記構成によれば、部品カバーに凹部が設けられて厚みが薄くなつていても、部品 カバーの下面にはモールド樹脂より弾性率の小さい保護体を設けているため、この 保護体がモールド榭脂充填時に下方力 印加される圧力を受けて弾性変形し、この 圧力を横方向に分散させることができる。従って、外部力も電子部品に与えられる応 力を緩衝することができる。 [0008] According to the above configuration, even if the component cover is provided with a recess and has a small thickness, the lower surface of the component cover is provided with the protector having a smaller elastic modulus than the mold resin. It is elastically deformed by receiving the pressure applied by the downward force at the time of mold resin filling, and this pressure can be dispersed in the lateral direction. Therefore, the external force can also buffer the stress applied to the electronic component.
[0009] 上記の結果として、本発明は、電子部品パッケージの圧力に対する強度を上げ、 損傷を防止することができる。 As a result of the above, the present invention can increase the strength of the electronic component package with respect to pressure and prevent damage.
図面の簡単な説明 Brief Description of Drawings
[0010] [図 1]図 1は実施の形態 1における電子部品パッケージの斜視図である。 FIG. 1 is a perspective view of an electronic component package according to a first embodiment.
[図 2]図 2は実施の形態 1における電子部品パッケージの断面図である。 FIG. 2 is a cross-sectional view of the electronic component package in the first embodiment.
[図 3]図 3は実施の形態 1における電子部品ノ ッケージを構成する部品基板の下面 図である。 FIG. 3 is a bottom view of a component board constituting the electronic component knockout according to the first embodiment.
[図 4]図 4は実施の形態 1における電子部品ノ ッケージを構成する SAWデュプレクサ の回路図である。 [FIG. 4] FIG. 4 is a circuit diagram of a SAW duplexer constituting the electronic component rack according to the first embodiment.
[図 5]図 5は実施の形態 1における電子部品ノ ッケージを構成する部品カバーの下面 図である。 FIG. 5 is a bottom view of a component cover constituting the electronic component rack according to the first embodiment.
[図 6]図 6は実施の形態 1の SAWデュプレクサの断面図である。
[図 7]図 7は実施の形態 1における部品カバーを形成するマスクの上面図である。 FIG. 6 is a sectional view of the SAW duplexer according to the first embodiment. FIG. 7 is a top view of a mask forming a component cover in the first embodiment.
[図 8]図 8は実施の形態 1における部品カバーの下面図である。 FIG. 8 is a bottom view of the component cover in the first embodiment.
[図 9]図 9は実施の形態 2における電子部品パッケージの断面図である。 FIG. 9 is a cross-sectional view of the electronic component package in the second embodiment.
[図 10]図 10は実施の形態 2における電子部品ノ¾ /ケージを構成する部品基板の下 面図である。 FIG. 10 is a bottom view of a component board constituting an electronic component nodule / cage in the second embodiment.
[図 11A]図 11Aは実施の形態 2における SAWデュプレクサの製造工程を示す第 1の 図である。 FIG. 11A is a first diagram showing a manufacturing process of the SAW duplexer in the second embodiment.
[図 11B]図 11Bは実施の形態 2における SAWデュプレクサの製造工程を示す第 2の 図である。 FIG. 11B is a second diagram showing the manufacturing process of the SAW duplexer in the second embodiment.
[図 11C]図 11Cは実施の形態 2における SAWデュプレクサの製造工程を示す第 3の 図である。 FIG. 11C is a third diagram illustrating the SAW duplexer manufacturing process according to the second embodiment.
[図 11D]図 11Dは実施の形態 2における SAWデュプレクサの製造工程を示す第 4の 図である。 FIG. 11D is a fourth diagram showing a manufacturing process of the SAW duplexer in the second embodiment.
[図 11E]図 11Eは実施の形態 2における SAWデュプレクサの製造工程を示す第 5の 図である。 FIG. 11E is a fifth diagram showing a manufacturing process of the SAW duplexer in the second embodiment.
[図 11F]図 11Fは実施の形態 2における SAWデュプレクサの製造工程を示す第 6の 図である。 FIG. 11F is a sixth diagram showing the manufacturing process of the SAW duplexer in the second embodiment.
[図 12A]図 12Aは実施の形態 2における SAWデュプレクサの製造工程を示す第 7の 図である。 FIG. 12A is a seventh diagram showing the manufacturing process of the SAW duplexer in the second embodiment.
[図 12B]図 12Bは実施の形態 2における SAWデュプレクサの製造工程を示す第 8の 図である。 FIG. 12B is an eighth diagram illustrating a SAW duplexer manufacturing process according to the second embodiment.
[図 12C]図 12Cは実施の形態 2における SAWデュプレクサの製造工程を示す第 9の 図である。 FIG. 12C is a ninth diagram illustrating the SAW duplexer manufacturing process according to the second embodiment.
[図 12D]図 12Dは実施の形態 2における SAWデュプレクサの製造工程を示す第 10 の図である。 FIG. 12D is a tenth view showing a manufacturing process of the SAW duplexer in the second embodiment.
[図 12E]図 12Eは実施の形態 2における SAWデュプレクサの製造工程を示す第 11 の図である。 FIG. 12E is an eleventh view showing a manufacturing process of the SAW duplexer in the second embodiment.
[図 12F]図 12Fは実施の形態 2における SAWデュプレクサの製造工程を示す第 12
の図である。 [FIG. 12F] FIG. 12F shows the SAW duplexer manufacturing process according to the second embodiment. FIG.
[図 13]図 13は実施の形態 3における電子部品パッケージの断面図である。 FIG. 13 is a cross-sectional view of the electronic component package in the third embodiment.
[図 14]図 14は実施の形態 4における電子部品ノ¾ /ケージを構成する部品基板の下 面図である。 FIG. 14 is a bottom view of a component board constituting an electronic component nodule / cage in Embodiment 4.
[図 15A]図 15Aは実施の形態 3における SAWデュプレクサの製造工程を示す第 1の 図である。 FIG. 15A is a first diagram showing a SAW duplexer manufacturing process according to Embodiment 3.
[図 15B]図 15Bは実施の形態 3における SAWデュプレクサの製造工程を示す第 2の 図である。 FIG. 15B is a second diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
[図 15C]図 15Cは実施の形態 3における SAWデュプレクサの製造工程を示す第 3の 図である。 FIG. 15C is a third diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
[図 15D]図 15Dは実施の形態 3における SAWデュプレクサの製造工程を示す第 4の 図である。 FIG. 15D is a fourth diagram showing a manufacturing process of the SAW duplexer in the third embodiment.
[図 15E]図 15Eは実施の形態 3における SAWデュプレクサの製造工程を示す第 5の 図である。 FIG. 15E is a fifth diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
[図 15F]図 15Fは実施の形態 3における SAWデュプレクサの製造工程を示す第 6の 図である。 FIG. 15F is a sixth diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
[図 16A]図 16Aは実施の形態 3における SAWデュプレクサの製造工程を示す第 7の 図である。 FIG. 16A is a seventh diagram showing the manufacturing process of the SAW duplexer in the third embodiment.
[図 16B]図 16Bは実施の形態 3における SAWデュプレクサの製造工程を示す第 8の 図である。 FIG. 16B is an eighth diagram showing a SAW duplexer manufacturing process according to the third embodiment.
[図 16C]図 16Cは実施の形態 3における SAWデュプレクサの製造工程を示す第 9の 図である。 FIG. 16C is a ninth diagram illustrating the manufacturing process of the SAW duplexer according to the third embodiment.
[図 16D]図 16Dは実施の形態 3における SAWデュプレクサの製造工程を示す第 10 の図である。 FIG. 16D is a tenth view showing a manufacturing process of the SAW duplexer in the third embodiment.
[図 16E]図 16Eは実施の形態 3における SAWデュプレクサの製造工程を示す第 11 の図である。 FIG. 16E is an eleventh view showing a manufacturing process of the SAW duplexer in the third embodiment.
[図 16F]図 16Fは実施の形態 3における SAWデュプレクサの製造工程を示す第 12 の図である。
[図 16G]図 16Gは実施の形態 3における SAWデュプレクサの製造工程を示す第 13 の図である。 FIG. 16F is a twelfth diagram showing the SAW duplexer manufacturing process according to the third embodiment. FIG. 16G is a thirteenth view showing a manufacturing process of the SAW duplexer in the third embodiment.
[図 17]図 17は実施の形態 3における部品カバーの下面図である。 FIG. 17 is a bottom view of the component cover in the third embodiment.
[図 18]図 18は実施の形態 3の SAWデュプレクサの断面図である。 FIG. 18 is a cross-sectional view of the SAW duplexer according to the third embodiment.
[図 19]図 19は従来の電子部品パッケージの断面図である。 FIG. 19 is a cross-sectional view of a conventional electronic component package.
符号の説明 Explanation of symbols
1 SAWデュプレクサ(電子部品) 1 SAW duplexer (electronic components)
3 実装基板 3 Mounting board
4 モールド樹脂 4 Mold resin
5 外部電極 5 External electrode
6 部品基板 6 Component board
7 IDT電極(素子) 7 IDT electrode (element)
8 凹部 8 Recess
9 部品カバー 9 Parts cover
10 保護体 10 Protective body
16 キヤビティ 16 Cavity
20 素子カバー 20 Element cover
30 接着部 30 Bonding part
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0012] (実施の形態 1) [0012] (Embodiment 1)
本発明の実施の形態 1の電子部品パッケージについて、電子部品としてアンテナ 共用器用弾性波装置 1 (以下、「SAWデュプレクサ 1」という)を例に挙げて説明する The electronic component package according to Embodiment 1 of the present invention will be described by taking as an example an elastic wave device 1 for an antenna duplexer (hereinafter referred to as “SAW duplexer 1”) as an electronic component.
[0013] この電子部品パッケージを構成する SAWデュプレクサ 1は、その斜視図を図 1で示 すように、他の電子部品 2a〜2cとともに実装基板 3上に配置され、モールド榭脂 4で 被覆されている。 SAWデュプレクサ 1は、その断面図を図 2に示すように、実装基板 3上に配置された外部電極 5を介して実装基板 3上に実装され、モールド榭脂 4で被 覆されている。
[0014] また、 SAWデュプレクサ 1は、部品基板 6と、この部品基板 6の下面(図 2における 下方であって、実装基板 3と対向する側の面をいう、以下同様)に配置されている複 数の素子としての IDT電極 7と、部品基板 6の下面側を覆い、かつ IDT電極 7と向力 い合う部分に凹部 8を有する部品カバー 9とを備え、この部品カバー 9の下面には榭 脂製の保護体 10を設けている。なお、外部電極 5とは、図 8に示す SAWデュプレク サ 1のグランド端子 12、受信端子 13、アンテナ端子 14、送信端子 15と接合される、 実装基板 3に設けられた電極を指すが、詳細は後述する。 [0013] The SAW duplexer 1 constituting the electronic component package is arranged on the mounting substrate 3 together with the other electronic components 2a to 2c, as shown in FIG. ing. As shown in FIG. 2, the SAW duplexer 1 is mounted on the mounting substrate 3 via the external electrode 5 disposed on the mounting substrate 3 and covered with the mold resin 4. [0014] The SAW duplexer 1 is arranged on the component board 6 and the lower surface of the component board 6 (the lower side in FIG. 2 and the side facing the mounting board 3; the same applies hereinafter). The IDT electrode 7 as a plurality of elements and a component cover 9 that covers the lower surface side of the component substrate 6 and has a recess 8 in a portion facing the IDT electrode 7 are provided on the lower surface of the component cover 9.榭 A protective body 10 made of resin is provided. The external electrode 5 is an electrode provided on the mounting board 3 that is joined to the ground terminal 12, the receiving terminal 13, the antenna terminal 14, and the transmitting terminal 15 of the SAW duplexer 1 shown in FIG. Will be described later.
[0015] 以下に、この電子部品パッケージの製造方法を説明する。 Hereinafter, a method for manufacturing the electronic component package will be described.
[0016] はじめに、図 3に示すように、部品基板 6の下面に、 IDT電極 7と溝 11とを形成し、 図 4に示す SAWデュプレクサ 1の回路を形成する。なお、 IDT電極 7の両端部には、 短絡電極を平行に配置した反射器を配置するのが一般的であるが、簡略した。また 、溝 11はドライエッチングカ卩ェにより形成する。部品基板 6の材料としては LiTaOあ First, as shown in FIG. 3, the IDT electrode 7 and the groove 11 are formed on the lower surface of the component substrate 6 to form the circuit of the SAW duplexer 1 shown in FIG. In general, a reflector having a short-circuit electrode arranged in parallel is arranged at both ends of the IDT electrode 7, but this is simplified. Further, the groove 11 is formed by dry etching. As the material of the component board 6, LiTaO
3 るいは LiNbO、 IDT電極 7の材料としてはアルミ等の金属材料を用いる。また、図 4 3 Or LiNbO, IDT electrode 7 is made of a metal material such as aluminum. Figure 4
3 Three
に示す SAWデュプレクサ 1の回路における受信端子 13、アンテナ端子 14,送信端 子 15、グランド端子 12は、それぞれ図 3に示す部品基板 6の下面における受信端子 13、アンテナ端子 14,送信端子 15、グランド端子 12に対応する。 The receiving terminal 13, antenna terminal 14, transmitting terminal 15, and ground terminal 12 in the circuit of the SAW duplexer 1 shown in FIG. 3 are the receiving terminal 13, antenna terminal 14, transmitting terminal 15, and ground on the bottom surface of the component board 6 shown in FIG. Corresponds to terminal 12.
[0017] 一方、 IDT電極 7を酸化や湿気による腐食から守るため、図 2に示すように、部品基 板 6の下面側にはシリコン製の部品カバー 9を設ける。なお、図 2は図 3における A— A断面を示したものである。 On the other hand, in order to protect the IDT electrode 7 from corrosion due to oxidation and moisture, a component cover 9 made of silicon is provided on the lower surface side of the component substrate 6 as shown in FIG. FIG. 2 shows the AA cross section in FIG.
[0018] 部品カバー 9には図 5に示すように、先に述べた IDT電極 7と向かい合う部分にドラ ィエッチング力卩ェで凹部 8を形成する。これによつて図 2に示すように、部品カバー 9 と IDT電極 7との間に、 IDT電極 7が部品カバー 9と接触するのを回避するキヤビティ 16を形成することができ、 IDT電極 7の振動空間を確保することができる。なお、図 2 および図 5のように、一つ或いは隣接する二つの IDT電極 7毎にキヤビティ 16を設け ることによって、部品カバー 9が薄くなる部分の面積を小さくすることができ、その結果 として外圧に対する強度を上げることができる。 [0018] As shown in FIG. 5, the component cover 9 is formed with a recess 8 at the portion facing the IDT electrode 7 described above by dry etching force. As a result, as shown in FIG. 2, a cavity 16 that prevents the IDT electrode 7 from coming into contact with the component cover 9 can be formed between the component cover 9 and the IDT electrode 7. A vibration space can be secured. As shown in FIGS. 2 and 5, by providing a cavity 16 for each one or two adjacent IDT electrodes 7, the area of the part cover 9 can be reduced, and as a result, Strength against external pressure can be increased.
[0019] 次に、部品基板 6に部品カバー 9を接着する工程を示す。 Next, a process of bonding the component cover 9 to the component board 6 will be described.
[0020] まず、図 3で示す部品基板 6の下面 (IDT電極 7が設けられている面でもある)側に
感光性榭脂を塗布し、次に図 7で示すようなマスク 18をのせる。図 7のマスク 18でノヽ ツチングを付した部分は、図 3の IDT電極 7と図 6の貫通孔 17に相当する部分であり 、この部分に孔が開いているため、マスク 18上から露光し洗浄すると、マスク 18上の ノヽツチングを付した部分だけ感光性榭脂が硬化して残り、ノヽツチングを付して 、な!/ヽ 部分には残らない。 First, on the lower surface (also the surface on which the IDT electrode 7 is provided) of the component substrate 6 shown in FIG. Photosensitive grease is applied, and then a mask 18 as shown in FIG. 7 is placed. The portion of the mask 18 shown in FIG. 7 that is notched is the portion corresponding to the IDT electrode 7 shown in FIG. 3 and the through hole 17 shown in FIG. 6. Since the hole is opened in this portion, the mask 18 is exposed from above. After cleaning, the photosensitive resin cures and remains only on the part of the mask 18 that has been notched, and notch remains on the part that has been notched.
[0021] 次に、マスク 18を外して、図 3に示す部品基板 6の下面全体に SiOを塗布し、感光 Next, the mask 18 is removed, and SiO is applied to the entire lower surface of the component substrate 6 shown in FIG.
2 2
性榭脂を溶解、除去することにより、感光性榭脂のない部分、すなわち IDT電極 7と 貫通孔 17以外の部分にのみ SiOが残る。この残った SiOを介して、部品基板 6と部 By dissolving and removing the photosensitive resin, SiO remains only in the part where there is no photosensitive resin, that is, the part other than the IDT electrode 7 and the through hole 17. Through this remaining SiO, component board 6 and parts
2 2 twenty two
品カバー 9とを常温で直接原子間結合すれば、図 6に示すような SAWデュプレクサ 1 を形成することができる。なお、本実施の形態 1では部品カバー 9を接着する工程は 真空で行ったが、部品カバー 9と部品基板 6とは接着剤を用いて接着することもでき、 その場合は窒素雰囲気あるいは酸素雰囲気で行うことができる。なお、酸素雰囲気 で行う場合でも、本実施の形態 1における図 2のキヤビティ 16は非常に小さな空間で あるため、キヤビティ 16内の酸素量も微量であり、この程度の酸素量であれば IDT電 極 7の表面に薄い金属酸ィ匕皮膜が形成されるだけで、むしろ酸ィ匕しに《なる。 If the product cover 9 is directly bonded with atoms at room temperature, a SAW duplexer 1 as shown in FIG. 6 can be formed. In the first embodiment, the process of bonding the component cover 9 is performed in a vacuum, but the component cover 9 and the component board 6 can be bonded using an adhesive, in which case the nitrogen atmosphere or the oxygen atmosphere is used. Can be done. Even in an oxygen atmosphere, the cavity 16 in FIG. 2 in Embodiment 1 is a very small space, so the amount of oxygen in the cavity 16 is very small. Only a thin metal oxide film is formed on the surface of the pole 7, but rather it becomes an acid.
[0022] 次に、図 6で示すように、この部品カバー 9に、図 2で示す外部電極 5と部品基板 6と を接続するための貫通孔 17を形成する。この貫通孔 17はドライエッチング加工で形 成することができる。なお、図 6は図 3における B—B断面を示したものである。この貫 通孔 17をスパッタ、ハンダペースト印刷等により金属材料で埋めることによって、 IDT 電極と外部電極との電気的接続をとることができるようになる。 Next, as shown in FIG. 6, a through hole 17 for connecting the external electrode 5 and the component substrate 6 shown in FIG. 2 is formed in the component cover 9. This through hole 17 can be formed by dry etching. FIG. 6 shows a BB cross section in FIG. By filling the through hole 17 with a metal material by sputtering, solder paste printing, or the like, it is possible to establish an electrical connection between the IDT electrode and the external electrode.
[0023] 次に、図 8のハッチングを付していない部分、すなわち、部品カバー 9の下面に設 けられた外部電極 5と接合する受信端子 13、アンテナ端子 14、送信端子 15、グラン ド端子 12を配置する場所を除いた部分に、図 2に示す榭脂製の保護体 10を設ける。 この保護体 10はエポキシ榭脂ある ヽはポリイミド榭脂に、シリコーンゴムなどのゴムを 添加したゴム変性可撓性榭脂を、印刷等により形成する。 Next, in FIG. 8, the hatched portion, that is, the receiving terminal 13, the antenna terminal 14, the transmitting terminal 15, and the ground terminal joined to the external electrode 5 provided on the lower surface of the component cover 9. In the part excluding the place where 12 is placed, the protective body 10 made of resin shown in Fig. 2 is provided. The protective body 10 is an epoxy resin, or a rubber-modified flexible resin in which a rubber such as silicone rubber is added to a polyimide resin by printing or the like.
[0024] そして部品基板 6と部品カバー 9を接着した後、図 8で示すように、部品カバー 9の 下面に設けたグランド端子 12、受信端子 13、アンテナ端子 14および送信端子 15を 、図 2で示すように実装基板 3の外部電極 5と接合させ、 SAWデュプレクサ 1を実装
基板 3上に実装する。 Then, after bonding the component board 6 and the component cover 9, as shown in FIG. 8, the ground terminal 12, the reception terminal 13, the antenna terminal 14, and the transmission terminal 15 provided on the lower surface of the component cover 9 are shown in FIG. As shown in Fig. 1, the SAW duplexer 1 is mounted by bonding to the external electrode 5 of the mounting board 3. Mount on board 3.
[0025] 最後に、モールド榭脂 4で SAWデュプレクサ 1を被覆する工程を説明する。 [0025] Finally, the process of coating the SAW duplexer 1 with the mold resin 4 will be described.
[0026] まず、図 1の SAWデュプレクサ 1と複数の電子部品 2a〜2cとを実装した被覆前の 複合型電子部品を金型に入れ、次にこの金型に加熱したモールド榭脂 4を注入し、 その後冷却して成形する。本実施の形態 1では、モールド榭脂 4にはフイラ一を分散 させたエポキシ榭脂を用い、モールド榭脂 4の注入条件は榭脂温度を 175°C、注入 圧力 50〜: LOOatmとした。 [0026] First, an uncoated composite electronic component on which the SAW duplexer 1 and the plurality of electronic components 2a to 2c in FIG. 1 are mounted is placed in a mold, and then heated mold resin 4 is injected into the mold. Then, it is cooled and molded. In the first embodiment, an epoxy resin in which a filler is dispersed is used for the mold resin 4, and the injection condition of the mold resin 4 is a resin temperature of 175 ° C. and an injection pressure of 50 to: LOOatm.
[0027] このモールド榭脂 4が部品カバー 9と実装基板 3の間に充填される時、部品カバー 9 には非常に大きな上向き(図 2における上方向)の圧力が印加される力 図 2に示す 部品カバー 9の下面に設けられた榭脂製の保護体 10はモールド榭脂 4より弾性率が 小さいため、このモールド榭脂 4から圧力を受けると変形して、その圧力を横方向に 分散させる。従って、部品パッケージの下から SAWデュプレクサ 1に与えられる応力 を緩衝することができる。 [0027] When the mold resin 4 is filled between the component cover 9 and the mounting substrate 3, a force that applies a very large upward pressure (upward in FIG. 2) to the component cover 9 is shown in FIG. Shown Since the protective body 10 made of resin provided on the lower surface of the component cover 9 has a lower elastic modulus than the mold resin 4, it deforms when it receives pressure from the mold resin 4, and disperses the pressure in the lateral direction. Let Therefore, the stress applied to the SAW duplexer 1 from under the component package can be buffered.
[0028] また、保護体 10を設けることで、 SAWデュプレクサ 1と実装基板 3との間の空間が 小さくなり、その空間に入り込むモールド榭脂 4量を減らすことができる。よって、モー ルド榭脂 4からの応力を抑制することができる。 [0028] By providing the protector 10, the space between the SAW duplexer 1 and the mounting substrate 3 is reduced, and the amount of mold resin 4 entering the space can be reduced. Therefore, the stress from the mold resin 4 can be suppressed.
[0029] 上記の結果として、本実施の形態 1では、 SAWデュプレクサ 1のパッケージの圧力 に対する強度を上げ、損傷を防止することができるのである。 As a result of the above, in the first embodiment, the strength of the SAW duplexer 1 against the pressure of the package can be increased and damage can be prevented.
[0030] なお、この実施の形態 1では、保護体を前述したように図 8のハッチングを付してい ない部分、すなわち、部品カバー 9の下面における外部電極 5との接合部分 (グラン ド端子 12、受信端子 13、アンテナ端子 14、送信端子 15を配置する場所)を除いた 全ての部分に設けたが、少なくとも外部電極 5との接合部分を除くキヤビティ 16に対 向する一部の部分に設けることで、同様の作用効果を得ることができるのである。 [0030] In the first embodiment, as described above, the protector is not hatched as shown in FIG. 8, that is, the joint with the external electrode 5 on the lower surface of the component cover 9 (ground terminal 12). Provided at all locations except receiving terminal 13, antenna terminal 14 and transmitting terminal 15), but at least at a part facing cavity 16 excluding the junction with external electrode 5. Thus, the same effect can be obtained.
[0031] また、本実施の形態 1では、図 3に示したように部品基板 6上に複数の IDT電極 7を 形成しており、図 5に示したように一つあるいは二つの IDT電極 7毎に凹部を形成し ているが、このように凹部 8を複数形成することで、全ての IDT電極 7を覆うように一つ の凹部 8を設ける場合と比較し、 SAWデュプレクサ 1の損傷を有効に抑制することが できる。
[0032] すなわち、複数の凹部 8を設けることによって、キヤビティ 16は分割され、複数のキ ャビティ 16間には図 2に示す仕切り壁 19が形成される。そしてこの仕切り壁 19が支 柱となって、外部応力を分散することができる。したがって、部品基板 6あるいは部品 カバー 9の割れを抑制することができるのである。なお、この仕切り壁 19はキヤビティ 16内に、別途榭脂等により任意に形成してもよい。 In Embodiment 1, a plurality of IDT electrodes 7 are formed on the component substrate 6 as shown in FIG. 3, and one or two IDT electrodes 7 are formed as shown in FIG. A recess is formed every time, but by forming a plurality of recesses 8 in this way, damage to the SAW duplexer 1 is more effective than when one recess 8 is provided to cover all IDT electrodes 7. Can be suppressed. That is, the cavity 16 is divided by providing the plurality of recesses 8, and a partition wall 19 shown in FIG. 2 is formed between the plurality of cavities 16. And this partition wall 19 becomes a support pillar, and can distribute an external stress. Therefore, cracking of the component board 6 or the component cover 9 can be suppressed. The partition wall 19 may be arbitrarily formed in the cavity 16 by using a separate oil or the like.
[0033] また、この複数のキヤビティ 16は完全に分割して形成してもよいが、隣接するキヤビ ティ 16間をトンネル状の連通路 (特に図示せず)により一部連結してもよい。このよう に連通路を設けることによって、キヤビティ 16の一部に過剰な外圧が印加された場合 、その外圧を、連通路を介して他のキヤビティ 16へと分散させることができる。その結 果、電子部品ノ¾ /ケージの外圧に対する強度を向上させることができるのである。 Further, the plurality of cavities 16 may be formed by being completely divided, but adjacent cavities 16 may be partially connected by a tunnel-shaped communication path (not shown). By providing the communication path in this way, when an excessive external pressure is applied to a part of the cavity 16, the external pressure can be distributed to other cavities 16 via the communication path. As a result, the strength of the electronic component nozzle / cage with respect to the external pressure can be improved.
[0034] なお、この連通路は、部品基板 6上に設けてもよいし、部品カバー 9上に設けてもよ い。そして、連通路を部品基板 6上に設ける場合は、図 4に示す部品基板 6の下面の 溝 11を連通路として利用してもょ 、。 Note that this communication path may be provided on the component substrate 6 or may be provided on the component cover 9. If the communication path is provided on the component board 6, the groove 11 on the lower surface of the component board 6 shown in FIG. 4 may be used as the communication path.
[0035] (実施の形態 2) [Embodiment 2]
以下、本発明に係る実施の形態 2について図を用いて説明する。 The second embodiment according to the present invention will be described below with reference to the drawings.
[0036] なお、この実施の形態 2と前述した実施の形態 1との主な違いは、キヤビティ 16を形 成するために、素子としての IDT電極 7の下方(図 9における下方であって、実装基 板 3と対向する側、以下同様)を覆う素子カバー 20を用いた点であり、他の類似する 構成については同じ符号を用いて説明することとし、その説明を簡略ィ匕する。 [0036] It should be noted that the main difference between the second embodiment and the first embodiment described above is that the IDT electrode 7 serving as an element is formed below the IDT electrode 7 in order to form the cavity 16 (below in FIG. The element cover 20 that covers the side facing the mounting board 3 (the same applies hereinafter) is used, and other similar configurations will be described using the same reference numerals, and the description will be simplified.
[0037] この実施の形態 2の電子部品パッケージにおいても図 1で示すように、実装基板 3 上に他の電子部品 2a〜 2cとともに SAWデュプレクサ 1が実装され、モールド榭脂 4 で被覆された構造として ヽる。 In the electronic component package of the second embodiment, as shown in FIG. 1, a structure in which SAW duplexer 1 is mounted on mounting substrate 3 together with other electronic components 2a to 2c and covered with mold resin 4 As you speak.
[0038] また、電子部品パッケージを構成する SAWデュプレクサ 1は、その断面図を図 9に 示すように、部品基板 6と、この部品基板 6の下面に配置されている複数の素子として の IDT電極 7と、 IDT電極 7の下面側を覆う素子カバー 20と、素子カバー 20を含む 部品基板 6の下面の全体を覆う部品カバー 9と、この部品カバー 9の下面に設けられ た榭脂製の保護体 10とを備えた構造となっている。なお、外部電極 5とは上述した実 施の形態 1と同様に、図 8に示す SAWデュプレクサ 1のグランド端子 12、受信端子 1
3、アンテナ端子 14、送信端子 15が接合される、実装基板 3に設けられた電極を指 す。 [0038] The SAW duplexer 1 constituting the electronic component package includes a component substrate 6 and IDT electrodes as a plurality of elements arranged on the lower surface of the component substrate 6, as shown in FIG. 7, the element cover 20 covering the lower surface side of the IDT electrode 7, the component cover 9 covering the entire lower surface of the component board 6 including the element cover 20, and the protective resin made on the lower surface of the component cover 9 It has a structure with 10 bodies. Note that the external electrode 5 is the same as in the first embodiment described above, the ground terminal 12 of the SAW duplexer 1 shown in FIG. 3. Refers to the electrode on the mounting board 3 where the antenna terminal 14 and the transmission terminal 15 are joined.
[0039] なお、 IDT電極 7と素子カバー 20との間にキヤビティ 16を形成することで、弾性波 の振動空間を確保するとともに、この振動空間を気密状態に維持している。また、本 実施の形態 2では、素子カバー 20を一または二つの IDT電極 7毎に設けて!/、る。 Note that by forming the cavity 16 between the IDT electrode 7 and the element cover 20, a vibration space for elastic waves is secured and the vibration space is maintained in an airtight state. In the second embodiment, an element cover 20 is provided for each one or two IDT electrodes 7! /.
[0040] そして、部品基板 6の材料として LiTaO、また IDT電極の材料としてアルミニウム、 [0040] LiTaO as the material of the component substrate 6, aluminum as the material of the IDT electrode,
3 Three
部品カバー 9の材料としてはフイラ一を含有するエポキシ榭脂を用いた。このフィラー としては酸ィ匕シリコンを用い、その含有率は約 80wt%とした。また、素子カバー 20の 枠部 20aには感光性ポリイミド、素子カバー 20の蓋部 20bには感光層をポリエステル とポリエチレンとで挟んだ三層構造の感光性ドライフィルムを用いた。その他、部品基 板 6の材料としては LiNbO As a material for the component cover 9, epoxy resin containing filler was used. As this filler, silicon oxide was used, and the content was about 80 wt%. The frame 20a of the element cover 20 is made of photosensitive polyimide, and the lid 20b of the element cover 20 is made of a photosensitive dry film having a three-layer structure in which a photosensitive layer is sandwiched between polyester and polyethylene. In addition, LiNbO is used as the material for the component board 6.
3、 IDT電極 7の材料としてはアルミニウム以外の金属も用 いることがでさる。 3. The IDT electrode 7 can be made of a metal other than aluminum.
[0041] 以下に、本実施の形態 2の SAWデュプレクサ 1の製造方法を説明する。 [0041] A method for manufacturing the SAW duplexer 1 according to the second embodiment will be described below.
[0042] はじめに、図 10に示すように、部品基板 6の下面全体にアルミニウムを蒸着スパッタ し、その後、図 11Aに示すように、ドライエッチング力卩ェで IDT電極 7などの電極パタ ーンを形成する。 [0042] First, as shown in FIG. 10, aluminum is vapor-deposited on the entire lower surface of the component substrate 6, and thereafter, an electrode pattern such as the IDT electrode 7 is formed by dry etching force as shown in FIG. 11A. Form.
[0043] なお、この図 11A〜Fと次の図 12A〜Fは、 SAWデュプレクサ 1の製造過程を示す 図であるため、 SAWデュプレクサ 1の実装状態を示す図 1、図 2及びその他の図に 示す SAWデュプレクサ 1を、上下方向に反転した状態を示している。従って図 11A 〜Fと図 12A〜Fを使った説明においてのみ、それ以外の説明と上下の方向が逆に なっている。 [0043] Since FIGS. 11A to 11F and FIGS. 12A to 12F are diagrams showing the manufacturing process of the SAW duplexer 1, FIGS. 1 and 2 showing the mounting state of the SAW duplexer 1 and other drawings. The state where the SAW duplexer 1 shown is inverted vertically is shown. Therefore, only in the description using FIGS. 11A to 11F and FIGS. 12A to 12F, the other directions are upside down.
[0044] 次に、図 11Bのように、部品基板 6上に感光性ポリイミド層 21をスピンコートで塗布 し、さらにその上方に、素子カバー 20の枠部 20aに相当する部分を光が通るようにし たマスク 22を乗せ、露光し現像する。これによつて、図 11Cのように素子カバー 20の 枠部 20aが形成できる。その後、図 11Dのように、枠部 20aを介して、部品基板 6の 上方に感光性ドライフィルム 23を乗せ、さらにこの感光性ドライフィルム 23の上方に、 素子カバー 20の蓋部 20bに相当する部分を光が通るようにしたマスク 24を乗せ、露 光して現像する。これによつて、図 11Eのように、枠部 20aと蓋部 20bからなる素子力
バー 20が形成される。 Next, as shown in FIG. 11B, a photosensitive polyimide layer 21 is applied onto the component substrate 6 by spin coating, and further, light passes through a portion corresponding to the frame portion 20a of the element cover 20 above it. Put the mask 22 on, expose and develop. As a result, the frame portion 20a of the element cover 20 can be formed as shown in FIG. 11C. Thereafter, as shown in FIG. 11D, the photosensitive dry film 23 is placed above the component substrate 6 through the frame portion 20a, and further corresponds to the lid portion 20b of the element cover 20 above the photosensitive dry film 23. Put on a mask 24 that allows light to pass through, and expose and develop. As a result, as shown in FIG. 11E, the element force composed of the frame portion 20a and the lid portion 20b is obtained. Bar 20 is formed.
[0045] 次に、図 11Fのように、部品基板 6上において、素子カバー 20を覆うように感光性 レジスト (ネガ型) 25を塗布し、この感光性レジスト 25の上方を、後述する外部端子接 続部 26 (図 12Bに示す)に相当する部分が露光しないようにマスク 28でマスキングす る。そして、露光して現像すると、図 12Aのように、感光性レジスト 25の外部端子接続 部 26に相当する部分に、孔 29を設けることができる。 Next, as shown in FIG. 11F, a photosensitive resist (negative type) 25 is applied on the component substrate 6 so as to cover the element cover 20, and the upper side of the photosensitive resist 25 is connected to an external terminal to be described later. Mask with mask 28 so that the portion corresponding to connection 26 (shown in Figure 12B) is not exposed. When exposed and developed, a hole 29 can be provided in a portion corresponding to the external terminal connecting portion 26 of the photosensitive resist 25 as shown in FIG. 12A.
[0046] 次に、図 12Bのように、孔 29の部分に Cuを無電解めつきで充填し、外部端子接続 部 26を形成する。その後、図 12Cのように、感光性レジスト 25を溶解し、部品基板 6 を金型に入れる。そして図 12Dのように、部品基板 6上において、素子カバー 20と外 部端子接続部 26とを覆うように液体のエポキシ榭脂(後に部品カバー 9となる)を流し 込み、熱硬化させる。 Next, as shown in FIG. 12B, the hole 29 is filled with Cu by electroless plating to form the external terminal connection portion 26. Thereafter, as shown in FIG. 12C, the photosensitive resist 25 is dissolved, and the component substrate 6 is placed in a mold. Then, as shown in FIG. 12D, a liquid epoxy resin (which will later become the component cover 9) is poured onto the component substrate 6 so as to cover the element cover 20 and the external terminal connection portion 26, and is thermally cured.
[0047] 次に、図 12Eのように、この部品カバー 9を形成するエポキシ榭脂を、外部端子接 続部 26が露呈するまで研磨し、部品カバー 9を形成する。そして、図 12Fのように、 外部端子接続部 26上に外部電極 5と接合する電極 (グランド端子 12、受信端子 13、 アンテナ端子 14、送信端子 15、ただし、グランド端子 12と受信端子 13だけを図示し 、アンテナ端子 14と送信端子 15は図示を省略する)を配置すれば、 SAWデュプレク サ 1が完成する。 Next, as shown in FIG. 12E, the epoxy resin forming the component cover 9 is polished until the external terminal connection portion 26 is exposed, thereby forming the component cover 9. Then, as shown in FIG. 12F, the electrode joined to the external electrode 5 on the external terminal connection portion 26 (the ground terminal 12, the reception terminal 13, the antenna terminal 14, the transmission terminal 15, but only the ground terminal 12 and the reception terminal 13 If the antenna terminal 14 and the transmission terminal 15 are not shown in the drawing, the SAW duplexer 1 is completed.
[0048] 次に、図 9で示すように(上記のとおり、図 9と図 11A〜Fおよび図 12A〜Fとは、上 下が逆になつている)、部品カバー 9の下面の外部電極 5と接合する電極 (グランド端 子 12、受信端子 13、アンテナ端子 14、送信端子 15)を配置する場所を除いた面に 、榭脂製の保護体 10を設ける。この保護体 10は、特にキヤビティ 16に対向するよう に設けることが望ましい。また、この保護体 10は、エポキシ榭脂あるいはポリイミド榭 脂にシリコーンゴムなどのゴムを添加したゴム変性可撓性榭脂を、印刷等により形成 したものである。 Next, as shown in FIG. 9 (as described above, FIG. 9 and FIGS. 11A to F and FIGS. 12A to F are upside down), external electrodes on the bottom surface of the component cover 9 A protective body 10 made of resin is provided on the surface excluding the place where the electrodes (ground terminal 12, receiving terminal 13, antenna terminal 14, transmitting terminal 15) to be joined to 5 are arranged. It is desirable to provide the protector 10 so as to face the cavity 16 in particular. The protective body 10 is formed by printing or the like a rubber-modified flexible resin obtained by adding a rubber such as a silicone rubber to an epoxy resin or a polyimide resin.
[0049] 最後に、実装基板 3に実装した SAWデュプレクサ 1をモールド榭脂 4で被覆し、パ ッケージングする工程を説明する。 [0049] Finally, the process of coating the SAW duplexer 1 mounted on the mounting substrate 3 with the mold resin 4 and packaging will be described.
[0050] まず、図 1に示されるような SAWデュプレクサ 1とその他の電子部品 2a〜2cとを実 装した複合型電子部品を金型に入れ、次にこの金型に加熱 ·加圧したモールド榭脂
4を注入し、その後冷却して形成する。本実施の形態 2では、モールド榭脂 4にはフィ ラーを分散させたエポキシ榭脂を用い、モールド榭脂 4の注入条件は榭脂温度を 17 5°C、注入圧力を 50〜100atmとした。また、このモールド榭脂 4のフイラ一には酸化 シリコンを用い、その混合率は 80wt%〜90wt%とした。 [0050] First, a composite electronic component in which a SAW duplexer 1 and other electronic components 2a to 2c as shown in Fig. 1 are mounted is placed in a mold, and then the mold is heated and pressurized in this mold. Oil Inject 4 and then cool to form. In the second embodiment, the mold resin 4 is an epoxy resin in which a filler is dispersed, and the injection conditions of the mold resin 4 are a resin temperature of 175 ° C. and an injection pressure of 50 to 100 atm. . In addition, silicon oxide was used for the mold resin 4 filler, and the mixing ratio was 80 wt% to 90 wt%.
[0051] 上記の構成とすることにより、電子部品パッケージは、モールド榭脂 4でカ卩ェ時の外 圧に対する強度が向上し、電子部品の損傷を防止することができる。その理由を以 下に説明する。 [0051] With the above-described configuration, the electronic component package is improved in strength against external pressure during molding by the mold resin 4, and damage to the electronic component can be prevented. The reason is explained below.
[0052] 図 9に示すように、モールド榭脂 4が部品カバー 9と実装基板 3との間に充填される 時、部品カバー 9には非常に大きな上向きの圧力が印加される。しかし、榭脂製の保 護体 10はモールド榭脂 4より弾性率が小さい、すなわち軟らかいため、このモールド 榭脂 4から圧力を受けると変形して、その圧力を多方向に分散させることができる。従 つて、保護体 10によって、部品カバー 9および素子カバー 20の下方から SAWデュ プレクサ 1に印加される応力を緩衝することができるのである。 As shown in FIG. 9, when the mold resin 4 is filled between the component cover 9 and the mounting substrate 3, a very large upward pressure is applied to the component cover 9. However, the protective body 10 made of resin has a smaller elastic modulus than the mold resin 4, that is, is softer, so it deforms when receiving pressure from the mold resin 4 and can disperse the pressure in multiple directions. . Therefore, the stress applied to the SAW duplexer 1 from below the component cover 9 and the element cover 20 can be buffered by the protector 10.
[0053] また、保護体 10を設ければ、 SAWデュプレクサ 1と実装基板 3との間の空間が小さ くなり、その空間に入り込むモールド榭脂 4の量を減らすことができる。よって、モール ド榭脂 4からの応力を抑制することができるのである。 [0053] If the protector 10 is provided, the space between the SAW duplexer 1 and the mounting substrate 3 is reduced, and the amount of the mold resin 4 entering the space can be reduced. Therefore, the stress from the mold resin 4 can be suppressed.
[0054] なお、この実施の形態 2では、保護体 10を前述したように図 8のハッチングを付して いない部分、すなわち、部品カバー 9の下面における外部電極 5との接合部分 (すな わち、グランド端子 12、受信端子 13、アンテナ端子 14、送信端子 15を配置する場 所)を除いた全ての部分に設けたが、少なくとも外部電極 5との接合部分を除くキヤビ ティ 16に対向する一部の部分に設けることで、同様の作用効果を得ることができるの である。 In Embodiment 2, the protector 10 is not hatched as shown in FIG. 8 as described above, that is, the joint portion with the external electrode 5 on the lower surface of the component cover 9 (ie, (Where the ground terminal 12, receiving terminal 13, antenna terminal 14, and transmitting terminal 15 are placed), but at least facing the cavity 16 except for the junction with the external electrode 5. By providing it in some parts, the same effect can be obtained.
[0055] また、部品カバー 9を、フィラーを含有するエポキシ榭脂としたことによって、電子部 品の損傷を抑制し、外圧に対する信頼性を向上させることができる。 [0055] Further, by using an epoxy resin containing filler as the component cover 9, damage to electronic components can be suppressed and reliability against external pressure can be improved.
[0056] これは、電子部品に外圧が印加された時、部品カバー 9は、一方ではその榭脂の 部分によってある程度の弾性変形が可能となり、外圧を多方向へ分散することができ る。他方ではフイラ一の部分によって部品カバー 9の外形を維持することが可能となり 、過剰な弾性変形を抑制することが出来る。その結果として電子部品パッケージの外
圧に対する強度が増し、 IDT電極 7の損傷を低減することができるのである。 [0056] This is because when the external pressure is applied to the electronic component, the component cover 9 can be elastically deformed to some extent by the portion of the grease on the one hand, and the external pressure can be distributed in multiple directions. On the other hand, the outer shape of the component cover 9 can be maintained by the portion of the filler, and excessive elastic deformation can be suppressed. As a result, outside the electronic component package The strength against pressure is increased, and damage to the IDT electrode 7 can be reduced.
[0057] また、部品カバー 9にフイラ一を含有させることによって、部品カバー 9は榭脂のみ で形成する場合よりも疎水性を示し、 IDT電極 7が湿気により腐食するのを抑制する ことができる。 [0057] In addition, by including a filler in the component cover 9, the component cover 9 is more hydrophobic than the case where the component cover 9 is formed only with a resin, and the IDT electrode 7 can be prevented from corroding due to moisture. .
[0058] なお、本実施の形態 2では、部品基板 6上に複数の IDT電極 7を形成しており、一 つあるいは二つの IDT電極 7毎に素子カバー 20を形成して!/、る。このように素子カバ 一 20を複数形成することで、全ての IDT電極 7を覆うように一つの素子カバー 20を 設ける場合と比較し、 SAWデュプレクサ 1の損傷を有効に抑制することができる。 In the second embodiment, a plurality of IDT electrodes 7 are formed on the component substrate 6, and an element cover 20 is formed for each one or two IDT electrodes 7. By forming a plurality of element covers 20 in this manner, damage to the SAW duplexer 1 can be effectively suppressed as compared with the case where one element cover 20 is provided so as to cover all the IDT electrodes 7.
[0059] すなわち、複数の素子カバー 20を設けることによってキヤビティ 16は分割され、複 数のキヤビティ 16間には図 9に示す仕切り壁 19が形成される。そしてこの仕切り壁 1 9が支柱となって、外部応力を分散することができる。したがって、部品基板 6あるい は部品カバー 9および素子カバー 20の割れを抑制することができるのである。なお、 この仕切り壁 19はキヤビティ 16内に、別途榭脂等により任意に形成してもよ!/、。 That is, the cavity 16 is divided by providing a plurality of element covers 20, and a partition wall 19 shown in FIG. 9 is formed between the plurality of cavities 16. And this partition wall 19 becomes a support | pillar, and can distribute an external stress. Therefore, cracking of the component substrate 6 or the component cover 9 and the element cover 20 can be suppressed. The partition wall 19 may be arbitrarily formed in the cavity 16 by using a separate resin or the like! /.
[0060] また、この複数のキヤビティ 16は完全に分割して形成してもよいが、隣接するキヤビ ティ 16間をトンネル状の連通路 (特に図示せず)により一部連結してもよい。このよう に連通路を設けることによって、キヤビティ 16の一部に過剰な外圧が印加された場合 、その外圧を、連通路を介して他のキヤビティ 16へと分散させることができる。その結 果として、電子部品ノ ッケージの外圧に対する強度を向上させることができるのであ る。 The plurality of cavities 16 may be formed by being completely divided, but adjacent cavities 16 may be partially connected by a tunnel-like communication path (not shown). By providing the communication path in this way, when an excessive external pressure is applied to a part of the cavity 16, the external pressure can be distributed to other cavities 16 via the communication path. As a result, the strength of the electronic component knockout against external pressure can be improved.
[0061] また、本実施の形態 2では、電子部品の低背化のため、部品カバー 9は部品基板 6 より薄いものとする。したがって、部品カバー 9は特に割れやすぐこの部品カバー 9 の損傷に伴って、素子カバー 20も損傷しやすくなつている。よって、この部品カバー 9の強度を向上させる必要があるため、上述のような構成が要求されるのである。 In the second embodiment, the component cover 9 is thinner than the component substrate 6 in order to reduce the height of the electronic component. Therefore, the component cover 9 is easily damaged, especially when the component cover 9 is cracked or damaged immediately. Therefore, since it is necessary to improve the strength of the component cover 9, the above-described configuration is required.
[0062] (実施の形態 3) [0062] (Embodiment 3)
以下、本発明に係る実施の形態 3について図を用いて説明する。 Hereinafter, Embodiment 3 according to the present invention will be described with reference to the drawings.
[0063] なお、この実施の形態 3と前述した実施の形態 1との主な違いは、図 13に示すよう に、キヤビティ 16を形成するために、素子としての IDT電極 7の外周に接着部 30を設 け、この接着部 30を介して部品基板 6と部品カバー 9とを接合し、この接着部 30で囲
まれた部分をキヤビティ 16として用いた点である。他の類似する構成については同じ 符号を用いて説明することとし、その説明を簡略化する。 Note that the main difference between the third embodiment and the first embodiment described above is that, as shown in FIG. 13, in order to form the cavity 16, an adhesive portion is formed on the outer periphery of the IDT electrode 7 as an element. 30, and the component board 6 and the component cover 9 are bonded to each other through the bonding portion 30 and surrounded by the bonding portion 30. This is the point where the rare part is used as a cavity 16. Other similar configurations will be described using the same reference numerals, and the description will be simplified.
[0064] この実施の形態 3の電子部品パッケージにおいても図 1で示すように、実装基板 3 上に他の電子部品 2a〜 2cとともに SAWデュプレクサ 1が実装され、それらがモール ド榭脂 4で被覆された構造として 、る。 [0064] Also in the electronic component package of the third embodiment, as shown in Fig. 1, SAW duplexer 1 is mounted on mounting substrate 3 together with other electronic components 2a to 2c, and these are covered with mold resin 4. As a structured structure.
[0065] そして、電子部品パッケージを構成する SAWデュプレクサ 1はその断面を図 13に 示すように、部品基板 6と、この部品基板 6の下面(図 13、図 15A〜F、図 16A〜Gに 示す下方であり、実施の形態 3の説明について同様)に配置されている複数の素子と しての IDT電極 7と、部品基板 6の下面側を覆う部品カバー 9とを備え、この部品カバ 一 9の下面には榭脂製の保護体 10を設けている。なお、外部電極 5とは、上述した 実施の形態 1の図 8と同様の、図 17に示す SAWデュプレクサ 1のグランド端子 12、 受信端子 13、アンテナ端子 14、送信端子 15が接合される、実装基板 3に設けられ た電極を指す。 [0065] Then, the SAW duplexer 1 constituting the electronic component package has a cross-section as shown in FIG. 13, and a component substrate 6 and a lower surface of the component substrate 6 (see FIGS. 13, 15A to F, and FIGS. 16A to G). The IDT electrode 7 as a plurality of elements arranged in the lower part of the figure and the same as in the description of the embodiment 3) and the component cover 9 covering the lower surface side of the component substrate 6 are provided. A protective member 10 made of resin is provided on the lower surface of 9. Note that the external electrode 5 is a mounting in which the ground terminal 12, the reception terminal 13, the antenna terminal 14, and the transmission terminal 15 of the SAW duplexer 1 shown in FIG. Refers to the electrode provided on the substrate 3.
[0066] また、この部品カバー 9と IDT電極 7との間には接着部 30が設けられ、部品カバー 9と部品基板 6を接合した際に接着部 30の厚みによりキヤビティ 16が形成される。部 品カバー 9の下面には、モールド榭脂 4より弾性率の小さい、すなわち軟らかい、保 護体 10を設けている。なお、接着部 30は、部品基板 6側に設けた第 1の接着部 30a (図 15D〜Fに示す)と、部品カバー 9側に設けた第 2の接着部 30b (図 16C〜Fに示 す)とが接合したものである。 Further, an adhesive portion 30 is provided between the component cover 9 and the IDT electrode 7, and a cavity 16 is formed by the thickness of the adhesive portion 30 when the component cover 9 and the component substrate 6 are joined. On the lower surface of the component cover 9, a protective body 10 having a smaller elastic modulus than the mold resin 4, that is, softer is provided. Note that the bonding part 30 includes a first bonding part 30a (shown in FIGS. 15D to F) provided on the component substrate 6 side and a second bonding part 30b (shown in FIGS. 16C to F) provided on the component cover 9 side. Are joined.
[0067] 以下に、本実施の形態 3における電子部品ノ¾ /ケージの製造方法について、図 15 A〜Fと 16A〜Gを用いて説明する。なお、図 15A〜Fと図 16A〜Gは SAWデュプ レクサ 1の製造過程を示す図である力 上記図 11A〜F、図 12A〜Fとは逆に、 SA Wデュプレクサ 1の実装状態を示す図 1、図 2と同じ上下方向を示している。 [0067] Hereinafter, a method for manufacturing the electronic component model / cage in the third embodiment will be described with reference to FIGS. 15A to 15F and 16A to G. 15A-F and FIGS. 16A-G are diagrams showing the manufacturing process of SAW duplexer 1. In contrast to FIGS. 11A-F and FIGS. 12A-F, FIG. 15A-F shows mounting state of SA W duplexer 1. 1. The same vertical direction as in Fig. 2 is shown.
[0068] はじめに図 15Aに示すように、部品基板 6の下面全体にアルミを蒸着スパッタし、そ の後、ドライエッチングカ卩ェにより、図 14に示すように IDT電極 7などの電極パターン を形成する。 First, as shown in FIG. 15A, aluminum is vapor-deposited and sputtered on the entire lower surface of the component substrate 6, and then an electrode pattern such as an IDT electrode 7 is formed by a dry etching cabinet as shown in FIG. To do.
[0069] 次に、図 15Bに示すように、部品基板 6の下面全体にレジスト 31を塗布する。そし て、図 15Cに示すように、図 17の受信端子 13、アンテナ端子 14、送信端子 15、ダラ
ンド端子 12が接続される電極部分と、図 14における全ての IDT電極 7を囲む部品基 板 6の外周領域を、露出するようにパターユングする。これは、次の工程において、 I DT電極 7の間際までアルミが蒸着されるのを防止し、この IDT電極 7の振動空間を 十分確保するためである。 Next, as shown in FIG. 15B, a resist 31 is applied to the entire lower surface of the component substrate 6. Then, as shown in FIG. 15C, the receiving terminal 13, antenna terminal 14, transmitting terminal 15, The electrode portion to which the terminal 12 is connected and the outer peripheral region of the component board 6 surrounding all the IDT electrodes 7 in FIG. 14 are patterned so as to be exposed. This is to prevent aluminum from being deposited until just before the IDT electrode 7 in the next step, and to ensure a sufficient vibration space for the IDT electrode 7.
[0070] そして、このパターユングしたレジスト 31の表面全体に、図 15Dのようにアルミを蒸 着し、上記露出した部分に第 1の接着部 30aを設ける。その後、図 15Eに示すように 下から研磨し、第 1の接着部 30aの高さに揃える。この時、蒸着後の表面は凹凸が大 きいことから、第 1の接着部 30aの下面も少し研磨し、表面を滑らかにしておくことが 好ましい。これは、後述の部品カバー 9との接着性を高めるためである。 [0070] Then, aluminum is deposited on the entire surface of the patterned resist 31 as shown in Fig. 15D, and a first adhesive portion 30a is provided on the exposed portion. Then, as shown in FIG. 15E, polishing is performed from below, so that the height of the first bonding portion 30a is aligned. At this time, since the surface after vapor deposition has large irregularities, it is preferable that the lower surface of the first adhesive portion 30a is slightly polished to make the surface smooth. This is to improve adhesion to the component cover 9 described later.
[0071] 次に、部品基板 6をレジスト 31の剥離液などに浸漬し、レジスト 31を溶解させると、 図 15Fのように、第 1の接着部 30aが IDT電極 7よりすこし高めになるように形成する ことができる。 Next, when the component substrate 6 is immersed in a stripping solution of the resist 31 and the resist 31 is dissolved, the first adhesive portion 30a is slightly higher than the IDT electrode 7 as shown in FIG. 15F. Can be formed.
[0072] 一方、図 13に示すように、 IDT電極 7を酸化や湿気による腐食から守るため、部品 基板 6の下面側にはシリコン製の部品カバー 9を設ける。この部品カバー 9の製造方 法を、図 16A〜Gを用いて以下に説明する。 On the other hand, as shown in FIG. 13, in order to protect the IDT electrode 7 from corrosion due to oxidation and moisture, a component cover 9 made of silicon is provided on the lower surface side of the component substrate 6. A method for manufacturing the component cover 9 will be described below with reference to FIGS.
[0073] まず、図 16Aのように、部品カバー 9の上面全体にレジスト 31を塗布し、図 16Bのよ うに第 1の接着部 30aと接合する部分以外にレジスト 31が残るようにパターユングす る。その後、図 16Cのように、部品カバー 9の表面全体に第 2の接着部 30bとなるァ ルミを蒸着する。 First, as shown in FIG. 16A, a resist 31 is applied to the entire upper surface of the component cover 9 and is patterned so that the resist 31 remains except for the portion to be joined to the first adhesive portion 30a as shown in FIG. 16B. The Thereafter, as shown in FIG. 16C, an aluminum film is deposited on the entire surface of the component cover 9 to serve as the second adhesive portion 30b.
[0074] 次に、図 16Dのように、部品カバー 9の表面を研磨し、第 2の接着部 30bの高さに 揃える。このとき、第 1の接着部 30aと同様に、第 2の接着部 30bの上面も少し研磨し 、表面を滑らかにしておくことが好ましい。その後、部品カバー 9をレジスト 31の剥離 液などに浸漬し、レジスト 31を溶解させると、図 16Eのような部品カバー 9が完成する Next, as shown in FIG. 16D, the surface of the component cover 9 is polished and aligned with the height of the second adhesive portion 30b. At this time, similarly to the first adhesive portion 30a, it is preferable that the upper surface of the second adhesive portion 30b is slightly polished so that the surface is smooth. After that, the part cover 9 is immersed in a resist 31 stripping solution, etc., and the resist 31 is dissolved to complete the part cover 9 as shown in FIG. 16E.
[0075] 次に、この部品カバー 9と部品基板 6とを接合する方法を以下に説明する。 Next, a method for joining the component cover 9 and the component substrate 6 will be described below.
[0076] まず、図 16Fのように、部品基板 6の下面に設けた第 1の接着部 30aと、部品カバー 9の上面に設けた第 2の接着部 30bとが接合するように位置決めを行う。次に、この第 1の接着部 30aと第 2の接着部 30bのそれぞれの接合面をプラズマ処理して洗浄す
る。その後、 200°Cに加熱しながら軽く押圧し、図 16Gのように、第 1の接着部 30aと 第 2の接着部 30bとを直接原子間結合させ、接着部 30を形成する。 First, as shown in FIG. 16F, positioning is performed so that the first adhesive portion 30a provided on the lower surface of the component substrate 6 and the second adhesive portion 30b provided on the upper surface of the component cover 9 are joined. . Next, the bonding surfaces of the first adhesive portion 30a and the second adhesive portion 30b are cleaned by plasma treatment. The Thereafter, light pressure is applied while heating to 200 ° C., and the first bonded portion 30a and the second bonded portion 30b are directly bonded between atoms as shown in FIG. 16G, thereby forming the bonded portion 30.
[0077] 次に、図 18で示すように、部品カバー 9の下面に設けられる電極(図 17および図 1 8のグランド端子 12、受信端子 13、アンテナ端子 14、送信端子 15、ただし、図 18で はグランド端子 12とアンテナ端子 14だけを示す)と部品基板 6に設けられた各電極と を接続するための貫通孔 17をドライエッチング加工により形成する。なお、図 18は図 17における B— B断面を示している。その後、この貫通孔 17の内側に Ti、 Ni、 Auを 順次蒸着し、さらにその蒸着膜の内部にはんだを印刷して充填し、外部端子接続部 32を形成する。 Next, as shown in FIG. 18, the electrodes provided on the lower surface of the component cover 9 (the ground terminal 12, the reception terminal 13, the antenna terminal 14, the transmission terminal 15 in FIG. 17 and FIG. 18; Here, only the ground terminal 12 and the antenna terminal 14 are shown) and through-holes 17 for connecting the respective electrodes provided on the component substrate 6 are formed by dry etching. FIG. 18 shows a BB cross section in FIG. Thereafter, Ti, Ni, and Au are sequentially deposited inside the through-hole 17, and solder is printed and filled inside the deposited film to form the external terminal connection portion 32.
[0078] 次に、図 13で示すように、部品カバー 9の下面であり、外部電極 5と接合する電極 を配置する場所を除いた全ての面に、榭脂製の保護体 10を設ける。この保護体 10 はエポキシ榭旨あるいはポリイミド榭旨に、シリコーンゴムなどのゴムを添力 []したゴム 変性可撓性榭脂を、印刷等により形成したものである。その後、図 17に示すように、 部品カバー 9の下面におけるノ、ツチングを付した位置に外部電極 5と接合する電極、 すなわち図 7および図 18のグランド端子 12、受信端子 13、アンテナ端子 14、送信端 子 15を配置すれば、 SAWデュプレクサ 1が完成する。 Next, as shown in FIG. 13, the protective body 10 made of resin is provided on the entire bottom surface of the component cover 9 except for the place where the electrode to be joined to the external electrode 5 is disposed. This protective body 10 is formed by printing or the like a rubber-modified flexible resin in which rubber such as silicone rubber is applied to epoxy resin or polyimide resin. After that, as shown in FIG. 17, the electrode joined to the external electrode 5 at the position where the bottom surface of the component cover 9 is marked, that is, the ground terminal 12, the reception terminal 13, the antenna terminal 14, the antenna terminal 14, If the transmission terminal 15 is arranged, the SAW duplexer 1 is completed.
[0079] そして最後に、図 1で示すように、実装基板 3に実装した SAWデュプレクサ 1をモー ルド榭脂 4で被覆し、ノ ッケージングする工程を説明する。 [0079] Finally, as shown in FIG. 1, the process of coating the SAW duplexer 1 mounted on the mounting substrate 3 with the mold resin 4 and knocking will be described.
[0080] まず、 SAWデュプレクサ 1とその他の電子部品 2a〜2cとを実装した複合型電子部 品を金型に入れ、次にこの金型に加熱したモールド榭脂 4を注入し、その後冷却して 成形する。本実施の形態 3では、モールド榭脂 4にはフイラ一を分散させたエポキシ 榭脂を用い、モールド榭脂 4の注入条件は榭脂温度を 175°C、注入圧力 50〜: LOOa tmとした。また、このモールド榭脂 4のフイラ一には酸ィ匕シリコンを用い、その混合率 は 80wt%〜90wt%とした。 [0080] First, a composite electronic component in which the SAW duplexer 1 and other electronic components 2a to 2c are mounted is placed in a mold, and then a heated mold resin 4 is injected into the mold, and then cooled. Mold. In the third embodiment, epoxy resin in which a filler is dispersed is used as mold resin 4, and the injection conditions of mold resin 4 are as follows: resin temperature is 175 ° C., injection pressure is 50 to: LOOatm . In addition, silicon oxide was used for the filler of this mold resin 4, and the mixing ratio was 80 wt% to 90 wt%.
[0081] 上記の構成とすることにより、電子部品パッケージはモールド榭脂 4でカ卩ェ時の外 圧に対する強度が向上し、電子部品の損傷を防止することができるのである。その理 由を以下に説明する。 [0081] With the above configuration, the electronic component package is improved in strength against the external pressure during the molding with the mold resin 4, and damage to the electronic component can be prevented. The reason is explained below.
[0082] 図 13に示すように、モールド榭脂 4が部品カバー 9と実装基板 3の間に充填される
時、部品カバー 9には非常に大きな上向きの圧力が印加されるが、榭脂製の保護体 10はモールド榭脂 4より弾性率が小さい、すなわち軟らかいため、このモールド榭脂 4から圧力を受けると変形して、その圧力を横方向に分散させることができる。従って 、保護体 10によって、部品カバー 9の下方力も SAWデュプレクサ 1に印加される応 力を緩衝することができるのである。 As shown in FIG. 13, the mold resin 4 is filled between the component cover 9 and the mounting board 3. At this time, a very large upward pressure is applied to the component cover 9, but the protective body 10 made of resin has a lower elastic modulus than the mold resin 4, that is, is softer, and therefore receives pressure from the mold resin 4. And the pressure can be dispersed in the lateral direction. Therefore, the downward force of the component cover 9 can also buffer the stress applied to the SAW duplexer 1 by the protector 10.
[0083] また、保護体 10を設ければ、 SAWデュプレクサ 1と実装基板 3との間の空間が小さ くなり、その空間に入り込むモールド榭脂 4の量を減らすことができる。よって、モール ド榭脂 4からの応力を抑制することができるのである。 In addition, if the protector 10 is provided, the space between the SAW duplexer 1 and the mounting substrate 3 is reduced, and the amount of mold resin 4 that enters the space can be reduced. Therefore, the stress from the mold resin 4 can be suppressed.
[0084] なお、部品カバー 9の下面から、外部電極 5と接合される受信端子 13、アンテナ端 子 14、送信端子 15、グランド端子 12を配置する場所を除いた部分全体に保護体を 設けたが、少なくとも外部電極 5の接合部分を除くキヤビティ 16に対向する一部の部 分に設けることで、同様の作用効果を得ることができるのである。 It should be noted that a protective body was provided on the entire surface except for the place where the receiving terminal 13, the antenna terminal 14, the transmitting terminal 15, and the ground terminal 12 to be joined from the lower surface of the component cover 9 were disposed. However, by providing at least a portion facing the cavity 16 excluding the joint portion of the external electrode 5, the same effect can be obtained.
[0085] また、本実施の形態 3では、複数の IDT電極 7の間には接着部 30があり、この接着 部 30はキヤビティ 16を細カゝく仕切る仕切り壁の役割を果たしている。そして SAWデ ュプレクサ 1の上下力もモールド榭脂 4など力もの外圧が印加された時、この仕切り壁 が支柱となってその応力を分散することができ、 SAWデュプレクサ 1のパッケージの 外圧に対する強度を向上させることができるのである。 In the third embodiment, there is an adhesive portion 30 between the plurality of IDT electrodes 7, and this adhesive portion 30 serves as a partition wall for partitioning the cavity 16. And when the external force of SAW duplexer 1 such as mold resin 4 is applied, the partition wall can be used as a support column to disperse the stress and improve the strength of SAW duplexer 1 against the external pressure. It can be made.
[0086] また、本実施の形態 3では、電子部品の低背化のため、部品カバー 9は部品基板 6 より薄い物とする。したがって、部品カバー 9は特に割れやすぐこの部品カバー 9の 強度を向上させる必要がある。そのために、上述のような構成および手段が要求され るのである。 In the third embodiment, the component cover 9 is thinner than the component substrate 6 in order to reduce the height of the electronic component. Therefore, it is necessary to improve the strength of the component cover 9 especially when the component cover 9 is cracked. Therefore, the above-described configuration and means are required.
産業上の利用可能性 Industrial applicability
[0087] 本発明にかかる電子部品パッケージは、電子部品パッケージの外圧に対する強度 を向上させ、電子部品の損傷を防止することができるため、高圧条件でのトランスファ モールドカ卩ェ工程などに大いに利用できるものである。従って、本発明の産業上の 利用可能性は極めて大きい。
[0087] Since the electronic component package according to the present invention can improve the strength against external pressure of the electronic component package and prevent the electronic component from being damaged, the electronic component package can be greatly used for a transfer mold cleaning process under a high-pressure condition. It is. Therefore, the industrial applicability of the present invention is extremely large.
Claims
[1] 実装基板と、前記実装基板上に配置された外部電極と、前記外部電極を介して前記 実装基板上に実装された電子部品と、前記電子部品を前記実装基板上において被 覆したモールド榭脂とを備え、 [1] A mounting substrate, an external electrode disposed on the mounting substrate, an electronic component mounted on the mounting substrate via the external electrode, and a mold that covers the electronic component on the mounting substrate With greaves,
前記電子部品は、部品基板と、前記部品基板の前記実装基板に対向する面に配置 されている素子と、前記部品基板の前記実装基板に対向する面側を覆う部品カバー を有し、 The electronic component has a component substrate, an element disposed on a surface of the component substrate facing the mounting substrate, and a component cover that covers a surface of the component substrate facing the mounting substrate.
前記部品カバーは前記素子と向力 、あう部分にキヤビティがあり、 The component cover has a cavity in the area where it faces the element,
前記外部電極の接合部分を除く前記キヤビティに対向する部品カバーの前記実装 基板に対向する面には前記モールド榭脂より弾性率の小さい保護体を設けた、電子 部品パッケージ。 An electronic component package, wherein a protector having a smaller elastic modulus than that of the mold resin is provided on a surface of the component cover facing the cavity excluding the joint portion of the external electrode, the surface facing the mounting substrate.
[2] 前記保護体は、榭脂、またはゴムにより形成した、請求項 1に記載の電子部品ノッケ ージ。 [2] The electronic component rack according to claim 1, wherein the protector is formed of a resin or rubber.
[3] 前記部品基板の前記素子と向力 、あう部分に凹部を設け、前記凹部により前記キヤ ビティを形成した、請求項 1に記載の電子部品パッケージ。 [3] The electronic component package according to [1], wherein a concave portion is provided in a portion that faces the element of the component substrate, and the cavity is formed by the concave portion.
[4] 前記素子を素子カバーで覆 、前記キヤビティを形成した、請求項 1に記載の電子部 品パッケージ。 [4] The electronic component package according to [1], wherein the element is covered with an element cover to form the cavity.
[5] 前記素子の外周に接着部を設け、前記接着部を介して前記部品基板と前記部品力 バーとを接合するとともに、前記接着部で囲まれた部分に前記キヤビティを形成した 、請求項 1に記載の電子部品パッケージ。
[5] The bonding portion is provided on an outer periphery of the element, the component substrate and the component force bar are bonded via the bonding portion, and the cavity is formed in a portion surrounded by the bonding portion. The electronic component package according to 1.
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US11/575,809 US7652214B2 (en) | 2005-11-02 | 2006-10-30 | Electronic component package |
CN2006800016323A CN101091313B (en) | 2005-11-02 | 2006-10-30 | Electronic component package |
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Cited By (2)
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JP2009212760A (en) * | 2008-03-04 | 2009-09-17 | Panasonic Corp | Surface acoustic wave device |
JP2015092774A (en) * | 2015-02-05 | 2015-05-14 | スカイワークス・パナソニック フィルターソリューションズ ジャパン株式会社 | Method for manufacturing surface acoustic wave device |
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JP6715672B2 (en) * | 2016-04-25 | 2020-07-01 | 株式会社村田製作所 | Circuit module |
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JPH08204497A (en) * | 1995-01-26 | 1996-08-09 | Murata Mfg Co Ltd | Surface acoustic wave device |
JP2000261284A (en) * | 1999-03-05 | 2000-09-22 | Kyocera Corp | Surface acoustic wave device and its production |
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EP0275588B1 (en) * | 1986-12-19 | 1993-11-10 | Koninklijke Philips Electronics N.V. | Method of fabricating a semiconductor device with reduced packaging stress |
TW480636B (en) * | 1996-12-04 | 2002-03-21 | Seiko Epson Corp | Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment |
US5821161A (en) * | 1997-05-01 | 1998-10-13 | International Business Machines Corporation | Cast metal seal for semiconductor substrates and process thereof |
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JPH08204497A (en) * | 1995-01-26 | 1996-08-09 | Murata Mfg Co Ltd | Surface acoustic wave device |
JP2000261284A (en) * | 1999-03-05 | 2000-09-22 | Kyocera Corp | Surface acoustic wave device and its production |
JP2002217673A (en) * | 2001-01-15 | 2002-08-02 | Matsushita Electric Ind Co Ltd | Saw device, manufacturing method thereof, and electronic component using the same |
JP2003032075A (en) * | 2001-07-12 | 2003-01-31 | Toshiba Corp | Surface acoustic wave device and its manufacturing method |
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JP2009212760A (en) * | 2008-03-04 | 2009-09-17 | Panasonic Corp | Surface acoustic wave device |
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KR100863836B1 (en) | 2008-10-15 |
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