CN101084578A - 半导体开关模块 - Google Patents

半导体开关模块 Download PDF

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CN101084578A
CN101084578A CNA200480044638XA CN200480044638A CN101084578A CN 101084578 A CN101084578 A CN 101084578A CN A200480044638X A CNA200480044638X A CN A200480044638XA CN 200480044638 A CN200480044638 A CN 200480044638A CN 101084578 A CN101084578 A CN 101084578A
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contact
switch module
semiconductor switch
power semiconductor
conductive layer
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沃尔特·阿普费尔巴彻
诺伯特·赖琴巴赫
约翰·塞茨
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Siemens AG
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Abstract

本发明涉及一种具有一用平面工艺实施的功率半导体元件(10)的半导体开关模块(1)。其中，所述功率半导体元件(10)包括一基层(110)、一铜层(120)、至少一个安装在所述铜层(120)上的功率半导体芯片(140)以及另一导电层(160)，所述另一导电层覆盖所述功率半导体芯片(140)的至少一个负载连接端(L)。根据本发明，设置有用于将所述负载连接端(L)稳定连接至一负载电路的构件(20，30)。所述构件(20，30)建构为，其通过一接触区域(A)平面地压在所述导电层(160)上。

Description

半导体开关模块
技术领域
本发明涉及一种根据权利要求1前序部分所述的半导体开关模块。
背景技术
如果需要在几百伏的工作电压下频繁且基本无噪声地通断好几百安培的负载电流，应使用半导体开关模块。
其中，例如可用所谓的接合工艺制备半导体开关模块。在此过程中，通过相应的接合线将真正意义上的包括一衬底和安装在衬底上的功率半导体芯片以及其他组件的功率半导体元件与连接元件相连。这些连接元件穿过半导体开关模块的模块外壳通向外部，从而可在其与待通断的负载电路之间建立相应的互连。为实现组件和接合线的电绝缘，模块外壳内腔的大部分空间中都填注了绝缘灌封组合物。此外，为实现散热，衬底的与带有功率半导体芯片一侧相对的一侧上安装有一适当尺寸的散热片。
作为可选方案，也可用所谓的平面工艺建构这种半导体开关模块的功率半导体元件。例如WO 03/030247中公开过功率半导体元件的这种平面结构，其中，组件被安装在包含两面涂覆有铜层的陶瓷基板的衬底上。通过在表面上安装其他电绝缘材料层和导电材料层，可使这些组件无需额外的接线就可实现彼此间的区域接触连接或与连接元件相连。通过使用这些用平面工艺制备而成的功率半导体元件，可在很大程度上免除接合工艺和传统焊接工艺所需的布线过程。此外，由于仅通过电绝缘层即可实现各组件与导电层之间的绝缘，因而无需再使用额外的灌封组合物。因此，尤其在电绝缘层几乎延伸至功率半导体元件整个表面的情况下，电绝缘层具有增大不同导电层与组件之间的爬电距离的作用。借此可以更紧凑、更简单的方式及更低成本制备半导体开关模块。
功率半导体开关模块中的例如建构为晶闸管的功率半导体芯片具有一用于通断负载电流的控制连接端，其可接收一控制信号。根据这一控制信号对一通过一负载连接端与一功率半导体芯片基板的负载电流进行控制和通断。其中，可通过上文所述的接合工艺和平面工艺实现负载电路和控制信号的连接。但是，借助接合工艺进行连接的缺点在于非常复杂。仅借助平面工艺进行连接的缺点在于，用于连接负载连接端和控制连接端的平面导电层将功率半导体元件的部分表面覆盖住，以致形成复杂的平面结构。
发明内容
本发明的目的是提供一种半导体开关模块，在所述半导体开关模块中，可以整体而言较为简单的方式实现负载连接端的连接与控制连接端的连接。
这个目的通过一种半导体开关模块而达成，所述半导体开关模块
-具有一用平面工艺实施的功率半导体元件，所述功率半导体元件包括一基层、一铜层、至少一个安装在所述铜层上的功率半导体芯片以及另一导电层，所述另一导电层覆盖所述功率半导体芯片的至少一个负载连接端并因而与所述负载连接端电接触；
-具有用于将所述负载连接端稳定连接至一待通断的负载电路的构件；
-其中，所述构件建构为，其通过一接触区域平面地压在所述导电层上。
借助本发明的半导体开关模块可以简单的方式将待通断的负载电路连接在功率半导体芯片的负载连接端上。根据本发明而为此设置的构件实现了一种用于稳定连接的按压式接触连接，这种连接方式比已知的接合连接或焊接连接更简单。
特定而言，以平面工艺制成的可包括铜的所述另一导电层还额外用作功率半导体芯片连接端的表面保护层。这尤其适用于由于按压式接触连接而承受相应负荷的负载连接端。此外，借助所述另一导电层还可形成一非常平整的表面，这个表面可为所述构件的整个接触区域提供稳定支承。
因此，相比接合和焊接这样的点式连接方式，结合有一用平面工艺制备而成的功率半导体元件的区域按压式接触连接的优点在于可显著提高负载发生变化时的稳定性。这一点对于像软启动器那样会出现短时高负载的应用情况尤为重要。
为尽可能减小接触电阻，接触区域优选具有一与负载连接端的区域结构相对应的区域结构。通过这种借助尽可能大的接触区域而实现的按压式接触连接，可在功率半导体芯片的负载连接端和与其相连的负载电路之间实现低损耗电流流动。借此可避免例如在接合连接中常有的对浪涌电流负荷能力的限制。
优选直接在功率半导体芯片上实现按压式接触连接。在此情况下，可以将功率半导体元件压在一散热片上并精确地位于在功率半导体芯片所处的位置上，所述散热片安装在功率半导体元件的相对侧上。借此可恰好在功率半导体芯片所处的位置上实现功率半导体元件的陶瓷和所述散热片之间的最佳热接触。通过这种方式可实现从功率半导体芯片到散热片的效果极佳的功耗散热。
相比而言，如果在功率半导体元件上功率半导体芯片旁边的其他位置上进行按压式接触连接，所述另一导电层就必须延伸至功率半导体芯片表面以外，从而可借助接触区域在功率半导体芯片旁边建立一区域接触，其中，所述另一导电层与位于其下方的铜层表面和功率半导体芯片表面之间布置有一电绝缘层，所述电绝缘层在功率半导体芯片的负载连接端所处的位置上具有一窗口，因而可在所述另一导电层和负载连接端之间建立一电接触连接。
由于在许多情况下负载连接端和控制连接端在功率半导体芯片上的布置方式为负载连接端包围所述控制连接端，因此，通过在功率半导体芯片旁边进行按压式接触连接可实现负载连接端和控制连接端的接触件之间的空间分离。
根据本发明的半导体开关模块的一个优选建构方案，所述构件包括至少一个接触件和预压构件(prestress means)，其中，所述预压构件将所述至少一个接触件的接触区域平面地压在所述另一导电层上。借此可以特别简单的方式和以较少组件实现半导体开关模块的安装。
如果需要使负载连接端和控制连接端在空间上靠在一起，特别在对功率半导体芯片进行直接接触连接的情况下，接触件必须建构为可容纳控制连接端的一接触件的空心体。借此可缩小功率半导体元件和半导体开关模块的整体尺寸，其原因在于无需再在功率半导体芯片旁边设置额外的接触连接区域。
负载连接端表面和接触件接触区域之间未对准会使接触面积减小，从而导致接触电阻增大。通过将接触件例如建构为两部分，可避免发生上述情况，其中，这两个部分借助一弯曲区域而彼此邻接。所属弯曲区域的曲率可使所述两个部分彼此之间实现一稳定的区域接触。
通过在接触件上，尤其是在接触件的一布置在模块外壳上的支架和实际的接触区域之间，建构至少一个锥形部分，可通过在所述锥形部分有所提高的柔韧度来对出现的未对准进行效果更好的调整。
此外，接触件可含有软退火铜。由于软退火铜的硬度小，所以其可在发生轻微未对准时弯曲并紧靠在接触区域上。
优选将预压构件建构为压板(clip)，其特别在与接触件发生接触的位置上具有一突出部。预压构件通过所述突出部的弯曲表面以点的方式直接对接触件施力。借此可实现一稳定的接触连接，另外也可对未对准情况进行补偿。
如果预压构件具有用于将压板例如固定在一模块外壳上的紧固件，那么只有在拧紧所述紧固件时，预压构件才会在接触件上施加压力。
作为可选方案，所设置的紧固件也可使压板与功率半导体元件直接相连，从而可以不再需要模块外壳。在此情况下，功率半导体元件、接触件和预压构件构成一个单元，其在装配完毕的情况下就已建立起稳定的按压式接触连接，因而就已经构成一可使用的半导体开关模块。
除将预压构件建构为压板外，预压构件自身也可作为半导体开关模块的模块外壳的组成部分。通过省略额外的预压构件，可降低半导体开关模块的制备成本。
另一实施方式是将接触件和预压构件建构为一体式的弹性元件。也就是说，通过单个组件实现接触连接和压力加载。通过这种方式可再次降低半导体开关模块的成本。
此外，如果接触件建构为实心构件，则其可用作临时储热器。尤其是在短时间内会出现极高损耗的应用情况下，借此可将功率半导体芯片的温度保持在一允许范围内。与功率半导体芯片的焊接侧(此处的热量只有通过导热能力相对较差的陶瓷后才能到达散热片)不同，接触件只以最小的热阻连接在功率半导体芯片的顶面上，因而可非常有效地在短时间内对高功耗进行缓冲。然而，其中，主冷却负荷仍由设置在功率半导体元件的与带有功率半导体芯片一侧相对的一侧上的散热片承受。但散热片可采用较小的尺寸。
附图说明
下面借助附图对本发明和本发明的优选实施例进行详细说明，其中：
图1为本发明的半导体开关模块的第一实施方式的示意图；
图2为第二实施方式的示意图；
图3为第三实施方式的示意图；
图4为第四实施方式的示意图；以及
图5为第四实施方式的局部俯视图。
具体实施方式
图1以示意图形式显示一本发明的半导体开关模块1的结构，其例如可用于软启动器。其中，本发明的半导体开关模块包括一功率半导体元件10和用于将负载连接端L稳定连接在一未详细图示的负载电路上的构件20和30。在这个实施例中，半导体开关模块还具有一外壳40与一用于耗散一功率半导体芯片140所产生的热量的散热片50。
举例而言，本发明基于例如WO 03/030247中所公开的那种用平面工艺建构的功率半导体元件10。其中，所述功率半导体元件包含一具有两个铜镀层120和130的陶瓷载体110。功率半导体芯片140焊接在铜层120上。
借助同样采用平面工艺涂覆的绝缘膜150将功率半导体芯片140和铜镀层120的至少部分表面覆盖住。这个非导电层150在功率半导体芯片140的负载连接端L处具有一个窗口，使得负载连接端L可露出。
绝缘膜150和功率半导体芯片140的露出区域上同样通过平面工艺涂覆有另一导电层160。其中，优选也含有铜的所述导电层160的典型层厚为100μm-200μm。
为扩大导电层160与其他导电层或组件之间的电气间隙和爬电距离，还可借助平面工艺再次涂覆一未详细显示的绝缘膜。
通过这些适当时可延伸至功率半导体元件边缘的电绝缘层，可缩短各层之间和/或安装在功率半导体元件上的不同电气组件之间的爬电距离。通过这种水平和垂直方向上的绝缘作用可减小功率半导体元件的尺寸，从而形成一更紧凑的半导体模块。
根据本发明，设置有用于将负载连接端L稳定连接在通过功率半导体芯片140实现通断的负载电路上的构件20和30。在具体实施例中，通过构件30将导电接触件121的接触区域A压在直接位于负载连接端L上面的导电层160上。这一点在本实施例中特别借助一压板130而实现，其借助多个紧固件(此处为两个螺钉132)与模块外壳40相连，并具有一突出部131。
组装半导体开关模块时，例如由于单个组件具有尺寸公差，因而可能造成功率半导体元件10、构件20和30、模块外壳40和散热片50之间的未对准情况。因此，在特定情况下可能无法再使面积通常较大的接触区域A完全压在另一导电层160上，从而致使接触电阻变大，功率半导体芯片140热损耗增多。为避免出现这种未对准情况，图1所示的实施例在接触件121上设置了一锥形部分128。也可采取其他措施，例如将软退火铜用作接触件121的材料。此外，通过为压板130配备一突出部131，可确保接触件121以点的方式按压，从而确保接触件121与另一导电层150的稳定接触。
通常也可将其他结构解决方案作为用于实现接触件按压式接触连接的预压构件来代替压板。因此，可以相应方式建构模块外壳的外壳部件来代替压板，所述外壳部件在组装过程中可将接触件压在功率半导体元件上，从而实现按压式接触连接。分别根据半导体开关模块的不同实施方式以不同方式实现按压式接触。
图2显示的是一第二实施例。此处的接触件建构为两部分，通过使两个部件221和221′的弯曲区域W具有相应的造型，可以足够高的灵活性对接触件221与功率半导体元件10之间可能出现的未对准情况进行补偿。
图3显示的是本发明的其他接触件和预压构件。因此，除功率半导体芯片140的顶面外，也可例如借助一接触件321和预压构件30在功率半导体芯片140的旁边进行按压式接触连接。导电层160为此而延伸至功率半导体芯片140以外。接触件321与负载连接端L之间的接触连接同样通过所述另一导电层160而实现。
图3显示了另一种通过接触件322实现的实施方式。此处实施为杆状的接触件322具有一用于连接一电导体326的相应连接件327。通过这个穿过模块外壳40的电导体326可从外部与接触件322互连。接触件322在与接触区域相对的一侧上伸入一中空凹槽334中。通过这一中空凹槽334可将接触件拉紧，同时还可对轻微的未对准情况进行补偿。
图3还显示了另一通过接触件323实现的实施方式。在此情况下，接触件323同时也为预压构件。也就是说，通过使其具有合适的造型，并使其在模块外壳40中夹紧，接触件323会在组装完毕之后紧压在另一导电层160上。
图4显示的是本发明的半导体开关模块1的接触件421的另一实施方式。如图5中关于一功率半导体元件10的俯视图所示，控制连接端S通常被负载连接端L包围。借此可实现一为通断较大电流通常所需的大面积负载连接端L，而控制连接端S只需较小面积即可实现。如图5所示，为实现接触连接，借助平面工艺仅在功率半导体芯片140的控制连接端S上涂覆一薄导电层170。典型层厚在此也为100μm至200μm。因此，功率半导体芯片140的余下表面上并不存在可用于连接控制连接端S的平面导电层。对控制连接端S的接触连接例如直接通过图4所示的控制触点425而实现，控制触点425例如可为一弹簧触点或一接合连接。然而，根据本发明，为此必须将接触件421建构为空心体。在此情况下，空心体421的接触区域A几乎可全部用于电流传输。电流传输所引起的热损耗被最小化。
在上文所述的所有接触连接方式中，无论是本发明所提供的对负载接触端的按压式接触连接还是对控制连接端的弹性连接，通过平面工艺涂覆的所述另一导电层160均可用作负载连接端和控制连接端的保护层。借此可特别减小所述连接端上的机械负荷。通过近乎于垂直的接触连接可实现尽可能最大的电气间隙和爬电距离。在安装有一可扩大电气间隙和爬电距离的绝缘膜的情况下，这一点特别有利。

Claims (15)

1.一种半导体开关模块(1)，具有
一用平面工艺实施的功率半导体元件(10)，所述功率半导体元件包括一基层(110)、一铜层(120)、至少一个安装在所述铜层(120)上的功率半导体芯片(140)以及另一导电层(160)，所述另一导电层覆盖所述功率半导体芯片(140)的至少一个负载连接端(L)，
用于将所述负载连接端(L)稳定连接至一待通断的负载电路的构件(20，30)，
其中，所述构件(20，30)建构为，其通过一接触区域(A)平面地压在所述导电层(160)上。
2.根据权利要求1所述的半导体开关模块(1)，其特征在于，
所述另一导电层(160)为一铜层。
3.根据权利要求1或2所述的半导体开关模块(1)，其特征在于，
所述接触区域(A)具有一与所述负载连接端(L)的一区域结构相对应的区域结构。
4.根据权利要求1或2所述的半导体开关模块(1)，其特征在于，
所述另一导电层(160)延伸至所述功率半导体芯片(140)的表面以外，从而借助所述接触区域(A)在所述功率半导体芯片(140)旁边建立一区域接触，其中，所述另一导电层(160)与所述铜层(120)的表面和所述功率半导体芯片(140)的表面之间布置有一电绝缘层(150)，所述电绝缘层在所述功率半导体芯片(140)的负载连接端(L)所处的位置上具有一窗口(F)，从而在所述另一导电层(160)和所述负载连接端(L)之间建立一接触连接。
5.根据权利要求1至4中任一项权利要求所述的半导体开关模块(1)，其特征在于，
所述构件包括至少一个接触件(20)和预压构件(30)，其中，所述预压构件(30)将所述至少一个接触件(20)的接触区域(A)平面地压在所述另一导电层(160)上。
6.根据权利要求5所述的半导体开关模块(1)，其特征在于，
所述接触件(421)建构为一用于容纳一控制电极(425)的空心体。
7.根据权利要求5所述的半导体开关模块(1)，其特征在于，
所述接触件(221，221′)建构为两部分，其中，这两个部分(221，221′)通过一弯曲区域(W)而彼此邻接。
8.根据权利要求5至7中任一项权利要求所述的半导体开关模块(1)，其特征在于，
所述接触件(121，221′，321，421)具有至少一个锥形部分(128，228，328，428)。
9.根据权利要求5至8中任一项权利要求所述的半导体开关模块(1)，其特征在于，
所述接触件(121，221，321，322，421)用软退火铜制成。
10.根据权利要求5至9中任一项权利要求所述的半导体开关模块(1)，其特征在于，
所述预压构件包括一压板(130，230，330，430)和紧固件(132，232，332，432)，所述压板具有至少一个突出部(131，231，331，334，435)。
11.根据权利要求5至9中任一项权利要求所述的半导体开关模块(1)，其特征在于，
所述预压构件为所述半导体开关模块的一外壳的组成部分。
12.根据权利要求5所述的半导体开关模块(1)，其特征在于，
所述接触件和所述预压构件建构为一体式的弹性接触件(323)。
13.根据权利要求1至12中任一项权利要求所述的半导体开关模块(1)，其特征在于，
所述接触件上连接一电缆。
14.根据权利要求1至13中任一项权利要求所述的半导体开关模块(1)，其特征在于，
所述接触件用作储热器。
15.根据权利要求1至14中任一项权利要求所述的半导体开关模块(1)，其特征在于，
在所述功率半导体元件(110)的与具有所述功率半导体芯片(140)一侧相对的一侧上布置有另一铜层(130)，所述另一铜层与一散热片(50)相连。
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