CN101651123B - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

Info

Publication number
CN101651123B
CN101651123B CN2009101609228A CN200910160922A CN101651123B CN 101651123 B CN101651123 B CN 101651123B CN 2009101609228 A CN2009101609228 A CN 2009101609228A CN 200910160922 A CN200910160922 A CN 200910160922A CN 101651123 B CN101651123 B CN 101651123B
Authority
CN
China
Prior art keywords
contact element
power semiconductor
contact
housing
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009101609228A
Other languages
English (en)
Other versions
CN101651123A (zh
Inventor
马库斯·克内贝尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of CN101651123A publication Critical patent/CN101651123A/zh
Application granted granted Critical
Publication of CN101651123B publication Critical patent/CN101651123B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/63—Connectors not provided for in any of the groups H01L24/10 - H01L24/50 and subgroups; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Bipolar Transistors (AREA)

Abstract

本发明描述了一种功率半导体模块，其具有衬底、壳体和在所述壳体内部的、至少一个第一接触元件以及至少一个第二接触元件，第一接触元件带有至少一个配属于该接触元件的支承部。第一接触元件由具有至少一个第一层和至少一个绝缘层的交替层序列所布置而成，并且第一接触元件具有至少一个第一接触区段，用于与第二接触元件进行触点接通。第二接触元件具有至少一个布置于功率半导体模块内部的、用于与第一接触区段进行触点接通的第二接触区段以及至少一个穿过壳体的外侧进行伸展的、用于对外进行触点接通的第三接触区段。其中，壳体具有配属于第二接触元件的第三接触区段的伸展到壳体的外侧的穿引部。在第一接触元件的第一接触区段与第二接触元件的第二接触区段之间构成有空腔，导电的填充物位于该空腔中。

Description

功率半导体模块
技术领域
本发明描述了一种有壳体的功率半导体模块，该功率半导体模块具有构造为交替层序列的、用于与功率半导体构件的负荷和控制接头进行电连接的第一接触元件以及具有用于对外进行触点接通（Kontaktierung）的第二接触元件。
背景技术
功率半导体模块形成本发明的出发点，正如其例如在DE 103 55925 A1和由DE 10 2006 078 013 A1中所公知的。所述第一个出版文献公开了用于功率半导体构件的接触元件，该接触元件由带绝缘中间层的第一导电箔片和第二导电箔片的箔片组件所组成。功率半导体构件与第一导电层借助超声波焊接持久而可靠地电连接。功率半导体构件的模块内部的适配于电路的连接（所述功率半导体构件不仅包括负荷接头而且包括控制接头）在此被公开。然而，所述的出版文献未公开用于对外连接的负荷和控制连接的细节。
DE 10 2006 078 013 A1公开了一种功率半导体模块，其带有壳体、衬底和由DE 103 55 925 A1中作为箔片组件所公知的接触元件，其中，箔片组件在各个限定的区段中穿过壳体中的引导区段到达壳体的外侧，以便在那里保证与外部的印刷电路板的负荷和控制接头。
在此不利的是，与外部印刷电路板的触点接通借助钎焊连接来构造，该触点接通在触点接通的拆焊和重新钎焊时，由于第一接触元件的高柔性而必须被重新安设并且必须相应于外部印刷电路板的电路布局地与接触面一起被重新调整。
发明内容
本发明的任务在于，介绍一种功率半导体模块，该功率半导体模块具有壳体和构造为交替层序列的接触元件以及用于对外进行触点接通的第二接触元件，其中，功率半导体模块可以简单地制造并且允许功率半导体模块的第一接触元件与第二接触元件可靠的触点接通。
该任务根据本发明地通过如下措施得以解决。另外，对优选的实施方式进行了介绍。
根据本发明，提供一种功率半导体模块，具有衬底、壳体和在所述壳体内部的至少一个第一接触元件以及至少一个第二接触元件，所述第一接触元件带有至少一个配属于所述接触元件的支承部；其中，所述第一接触元件由具有至少一个第一层和至少一个绝缘层的交替的层序列来布置而成；并且其中，所述第一接触元件具有至少一个第一接触区段，用于与所述第二接触元件进行触点接通；并且其中，所述第二接触元件具有至少一个布置于所述功率半导体模块的内部的第二接触区段，用于与所述第一接触区段进行触点接通，以及具有至少一个穿过所述壳体的外侧进行伸展的第三接触区段，用于对外进行触点接通；其中，所述壳体具有配属于所述第二接触元件的所述第三接触区段的、伸展到所述壳体的所述外侧的穿引部；并且其中，在所述第一接触元件的所述第一接触区段与所述第二接触元件的所述第二接触区段之间构成有空腔，导电的填充物位于所述空腔中。
本发明的设想从如下的功率半导体模块出发，所述功率半导体模块具有壳体、带有第一导体轨的至少一个衬底以及在这些导体轨上适配于电路地布置的功率半导体构件。
此外，功率半导体模块具有至少一个第一接触元件，其中，该第一接触元件由至少一个导电层和至少一个绝缘层的交替的层序列所组成。至少一个导电层在自身内结构化并且因此形成第二导体轨，该导体轨适配于电路地与功率半导体构件的负荷和控制连接面接触。第一接触元件的第一接触区段借助在壳体中布置的并相应地配属于第一接触元件的支承部在功率半导体模块的内部进行调节和支承。在此，优选可以为，支承部一体地由壳体材料所构成。此外，为了对第一接触元件进行调节和支承，有利的是，支承部与壳体的侧面围成一个角。
此外，功率半导体模块具有至少一个第二接触元件，该第二接触元件优选与壳体牢固地连接并且分别穿过已在壳体内布置的穿引部到达壳体的外侧并且用于在那里例如与外部印刷电路板进行对外的触点接通。在此，第二接触元件在功率半导体模块内部形成第二接触区段，该第二接触区段通过与第一接触元件的第一接触区段根据本发明的导电连接而使得在功率半导体构件与对外触点接通部之间的适配于电路的、导电连接意义上的触点接通成为可能。为此，第二接触元件构成有第三接触区段，第三接触区段穿过壳体内部的、分别配属给该第三接触区段的穿引部到达壳体的外侧。
在此，根据本发明地在配属于第一接触元件的支承部上的第一接触元件与在第二接触元件的引导区段上的第二接触元件之间构成空腔，将导电的填充物，优选为焊剂装入该空腔中。该形成的空腔在此由于支承部的布置而优选呈楔形地构造，而同样也可以接近漏斗形地构造。对于空腔的构造方案，根据本发明有利的是，构造为交替的层序列并且因此柔性的第一接触元件可靠地支承并且同时构成与第二接触元件的可靠的、导电的连接。
附图说明
借助图1至3的实施例对本发明的解决方案进一步进行阐述。
图1以截面图示出带有已布置的外部印刷电路板的、基于现有技术的功率半导体模块以及以截面图示出某一区域的放大视图。
图2以截面图概要地示出带有已布置的外部印刷电路板的、根据本发明的功率半导体模块的构造方案。
图3以三维侧-俯视图示出根据本发明的功率半导体模块的概要图。
具体实施方式
图1示出根据现有技术的系统的构造方案，所述系统具有功率半导体模块1、连接装置2和外部印刷电路板7。出于结构的清楚性的目的，还示出冷却体18。
功率半导体模块由壳体3组成，壳体3包围电绝缘的衬底10。衬底10又具有基体，基体优选是诸如氧化铝或者亚硝酸铝的绝缘陶瓷。在朝向功率半导体模块内部的第一主体面上，衬底10具有在自身内进行结构化的导体轨12。在衬底的导体轨12上布置有功率半导体构件14并且适配于电路地借助第一接触元件6连接，第一接触元件6由交替的层序列来形成。该种在图1中以放大的剖面图详细示出的层序列由分别在自身内进行结构化的、并因此构成导体轨的第一导电层60和第二导电层64以及布置于第一导电层60与第二导电层64之间的绝缘层62形成。在此，第一导电层60借助点焊连接部602、606与功率半导体构件14适配于电路地进行触点接通。此外，将接触元件引导穿过壳体3中的穿引部34到达壳体3的外侧36，在那里接触元件构成有相应地构造的接触区段660、662，所述接触区段660、662用于与外部印刷电路板7进行负荷和控制触点接通72，其中，该触点接通72借助钎焊连接来构造。
图2以截面图示出根据本发明的功率半导体模块的第一构造方案的概要图，其中，与图1结构相同的元件不再额外介绍。
以截面图示出的是功率半导体模块1的左侧，功率半导体模块1带有第一接触元件6，接触元件6布置在框架式的壳体3的内部并且与功率半导体构件14适配于电路地进行触点接通60a。此外，为第一接触元件配有一体地由壳体构成的支承部32，支承部32对第一接触元件的第一接触区段62进行支承并且与框架式壳体的侧面38a围成大约15°的角。
此外，示出第二接触元件4，该第二接触元件4布置在功率半导体模块的内部并且在那里形成第二接触区段40。此外，第二接触元件穿过在壳体3内的穿引部34到达壳体3的外侧36，第二接触元件在外侧36上形成第三接触区段42，第三接触区段42用于与外部印刷电路板7进行触点接通，其中，在此，根据现有技术的、与外部印刷电路板的适配于电路的连接优选借助插入式钎焊装配来实现，然而，不受限制地同样可以借助表面钎焊装配来实现。
在此，第二接触元件通过以壳体材料来部分地夹物模压（Umspritzen）而与壳体牢固地连接。通过第一接触元件6和第二接触元件4的布置，第一接触元件6的第一接触区段62和第二接触元件4的第二接触区段40在壳体3的内部形成近似楔形的空腔5。在此，空腔的开口指向衬底10的方向并且用于接纳焊剂50a，焊剂50a作为导电的填充物50形成第一接触元件与第二接触元件之间的触点接通。空腔的、在与衬底相反的方向上布置的、封闭的端面具有小体积的存储处52，存储处52在第一接触区段62的端面上包围第一接触区段62并且于是优化了该触点接通部的可靠性。焊剂50a将整个空腔填充至该空腔体积的75%。
此外，示出的是螺栓连接件8，用于以冷却体2进行装配。在此，功率半导体模块的壳体3具有一体构成的、用于接纳螺栓连接件8的、空置的第一材料区段30。该空置的材料区段和冷却体具有分别相互对齐的间隙300、302，该间隙300、302用于接纳螺栓连接件。
图3以三维左俯视图示出根据本发明的系统的另一构造方案的非按比例的概要图，图中不具冷却体及衬底，其中，结构相同的元件也不再额外地介绍。示出了壳体3的左侧壁38a和前侧壁38b以及壳体的中间壁38c。此外，分别示出各自带有功率半导体构件14a、14b和第一接触区段62a、62b的第一接触元件6a、6b以及此外分别示出第二接触元件4a、4b，由此，分别构成根据本发明的空腔5a、5b。在此，导电的填充物50是银导电粘合剂50b，银导电粘合剂50b填充至空腔（不能示出）体积的50%。各第一接触元件6a、6b的各第一接触区段62a、62b与壳体的左侧壁38a成5°的角。第二接触元件4a、4b的各第二接触区段借助粘接连接在其与壳体的所述侧壁38a的各接触面上以及在从壳体中出来到达壳体外侧（未示出）的穿引部上与壳体3持久地连接。从在壳体中配属于其的穿引部中出来，第二接触元件4a、4b在壳体的外侧上分别构成有第三接触区段（仅示出42a）。

Claims (9)

1.功率半导体模块（1），具有衬底（10）、壳体（3）和在所述壳体（3）内部的至少一个第一接触元件（6）以及至少一个第二接触元件（4），所述第一接触元件（6）带有至少一个配属于所述接触元件的支承部（32），
其中，所述第一接触元件（6）由具有至少一个第一层（60、64）和至少一个绝缘层（62）的交替的层序列来布置而成，
并且其中，所述第一接触元件（6）具有至少一个第一接触区段（68），用于与所述第二接触元件（4）进行触点接通，
并且其中，所述第二接触元件（4）具有至少一个布置于所述功率半导体模块的内部的第二接触区段（40），用于与所述第一接触区段（68）进行触点接通，以及具有至少一个穿过所述壳体的外侧（36）进行伸展的第三接触区段（42），用于对外进行触点接通，
其中，所述壳体具有配属于所述第二接触元件（4）的所述第三接触区段（42）的、伸展到所述壳体的所述外侧（36）的穿引部（34），
并且其中，在所述第一接触元件（6）的所述第一接触区段（68）与所述第二接触元件（4）的所述第二接触区段（40）之间构成有空腔（5），导电的填充物（50）位于所述空腔（5）中。
2.按权利要求1所述的功率半导体模块，其中，所述第二接触元件（4）与所述壳体（3）持久而牢固地连接。
3.按权利要求2所述的功率半导体模块，其中，所述壳体（3）与所述第二接触元件（4）的所述持久的连接通过对所述第二接触元件以壳体材料进行部分地夹物模压或者借助在所述壳体（3）与所述第二接触元件（4）之间的粘接连接来构造。
4.按权利要求1所述的功率半导体模块，其中，将所述导电的填充物（50）构成为焊剂（50a）或者构成为导电粘合剂（50b）。
5.按权利要求1所述的功率半导体模块，其中，所述空腔（5）呈漏斗形或呈楔形地构造。
6.按权利要求5所述的功率半导体模块，其中，漏斗形的或者楔形的所述空腔（5）的开口在所述衬底（10）的方向上构造。
7.按权利要求1所述的功率半导体模块，其中，所述空腔（5）具有存储处（52），用于接纳能导电的填充物（50）。
8.按权利要求1所述的功率半导体模块，其中，所述导电的填充物（50）具有如下的填充体积，所述填充体积为袋形的所述空腔（5）的体积的至少50%。
9.按权利要求1所述的功率半导体模块，其中，所述支承部（32）一体地由所述壳体材料所构成。
CN2009101609228A 2008-07-24 2009-07-24 功率半导体模块 Expired - Fee Related CN101651123B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008034468A DE102008034468B4 (de) 2008-07-24 2008-07-24 Leistungshalbleitermodul
DE102008034468.0 2008-07-24

Publications (2)

Publication Number Publication Date
CN101651123A CN101651123A (zh) 2010-02-17
CN101651123B true CN101651123B (zh) 2013-11-13

Family

ID=41056971

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101609228A Expired - Fee Related CN101651123B (zh) 2008-07-24 2009-07-24 功率半导体模块

Country Status (7)

Country Link
EP (1) EP2148367B1 (zh)
JP (1) JP2010034558A (zh)
KR (1) KR101580327B1 (zh)
CN (1) CN101651123B (zh)
AT (1) ATE503272T1 (zh)
DE (2) DE102008034468B4 (zh)
DK (1) DK2148367T3 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013200526B4 (de) * 2013-01-16 2019-11-21 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0352429A2 (en) * 1988-07-25 1990-01-31 International Business Machines Corporation High power, pluggable tape automated bonding package
CN1499619A (zh) * 2002-11-11 2004-05-26 ������������ʽ���� 模塑树脂封装型功率半导体装置及其制造方法
WO2006053846A1 (de) * 2004-11-19 2006-05-26 Siemens Aktiengesellschaft Halbleiterschaltmodul
DE102006027482B3 (de) * 2006-06-14 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung
CN101047172A (zh) * 2006-03-22 2007-10-03 塞米克朗电子有限及两合公司 具有连接装置的紧凑型功率半导体模块
CN101084578A (zh) * 2004-12-17 2007-12-05 西门子公司 半导体开关模块

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10355925B4 (de) * 2003-11-29 2006-07-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und Verfahren seiner Herstellung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0352429A2 (en) * 1988-07-25 1990-01-31 International Business Machines Corporation High power, pluggable tape automated bonding package
CN1499619A (zh) * 2002-11-11 2004-05-26 ������������ʽ���� 模塑树脂封装型功率半导体装置及其制造方法
WO2006053846A1 (de) * 2004-11-19 2006-05-26 Siemens Aktiengesellschaft Halbleiterschaltmodul
CN101084578A (zh) * 2004-12-17 2007-12-05 西门子公司 半导体开关模块
CN101047172A (zh) * 2006-03-22 2007-10-03 塞米克朗电子有限及两合公司 具有连接装置的紧凑型功率半导体模块
DE102006027482B3 (de) * 2006-06-14 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung

Also Published As

Publication number Publication date
KR101580327B1 (ko) 2015-12-24
DE102008034468A1 (de) 2010-02-11
DK2148367T3 (da) 2011-07-11
EP2148367B1 (de) 2011-03-23
DE102008034468B4 (de) 2013-03-14
DE502009000476D1 (de) 2011-05-05
CN101651123A (zh) 2010-02-17
JP2010034558A (ja) 2010-02-12
ATE503272T1 (de) 2011-04-15
KR20100011947A (ko) 2010-02-03
EP2148367A1 (de) 2010-01-27

Similar Documents

Publication Publication Date Title
CN206040616U (zh) 功率电子模块
CN101364679B (zh) 电连接组件
CN101635288B (zh) 具有功率半导体模块和连接装置的系统
US10284105B2 (en) Power converter
US7626256B2 (en) Compact power semiconductor module having a connecting device
EP3208838B1 (en) Semiconductor module
JP6265361B2 (ja) 差圧センサ
CN102548201B (zh) 金属芯基板
US10424947B2 (en) Battery monitoring device
CN105900296B (zh) 用于导通一定数目个电气信号的导通电桥
US8283784B2 (en) Method for producing a power semiconductor module, and power semiconductor module comprising a connection device
CN101651123B (zh) 功率半导体模块
JP5293628B2 (ja) コネクタ
JP2011227000A (ja) 配線材の接続構造
CN203014043U (zh) 具备改善安规间距的紧凑型端子的pcb板连接器
CN109937159B (zh) 布线模块及布线模块中的连接构件
US10319976B2 (en) Cable fixing structure
CN103620877A (zh) 电连接构造
CN104952860A (zh) 功率半导体组件
JP5544767B2 (ja) 半導体装置
CN106535544A (zh) 电气设备以及电力转换装置
JP2018076013A5 (zh)
CN211959061U (zh) 驱动电路装置
JP2021140865A (ja) 導電モジュール
JP2002218630A (ja) 電源分配バー

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131113

Termination date: 20180724

CF01 Termination of patent right due to non-payment of annual fee