CN101083383B - 激光器装置 - Google Patents

激光器装置 Download PDF

Info

Publication number
CN101083383B
CN101083383B CN2007101081805A CN200710108180A CN101083383B CN 101083383 B CN101083383 B CN 101083383B CN 2007101081805 A CN2007101081805 A CN 2007101081805A CN 200710108180 A CN200710108180 A CN 200710108180A CN 101083383 B CN101083383 B CN 101083383B
Authority
CN
China
Prior art keywords
dielectric constant
coating
laser device
gain media
electromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101081805A
Other languages
English (en)
Chinese (zh)
Other versions
CN101083383A (zh
Inventor
关口亮太
尾内敏彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN101083383A publication Critical patent/CN101083383A/zh
Application granted granted Critical
Publication of CN101083383B publication Critical patent/CN101083383B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN2007101081805A 2006-05-31 2007-05-30 激光器装置 Expired - Fee Related CN101083383B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006150923 2006-05-31
JP2006150923A JP4857027B2 (ja) 2006-05-31 2006-05-31 レーザ素子
JP2006-150923 2006-05-31

Publications (2)

Publication Number Publication Date
CN101083383A CN101083383A (zh) 2007-12-05
CN101083383B true CN101083383B (zh) 2010-09-29

Family

ID=38290143

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101081805A Expired - Fee Related CN101083383B (zh) 2006-05-31 2007-05-30 激光器装置

Country Status (4)

Country Link
US (1) US7693198B2 (https=)
EP (1) EP1863140A1 (https=)
JP (1) JP4857027B2 (https=)
CN (1) CN101083383B (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
JP4881056B2 (ja) 2006-05-01 2012-02-22 キヤノン株式会社 電磁波吸収体部を含むフォトニック結晶電磁波デバイス、及びその製造方法
JP4873746B2 (ja) * 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
JP4871816B2 (ja) * 2007-08-31 2012-02-08 キヤノン株式会社 レーザ素子
JP5127430B2 (ja) * 2007-12-25 2013-01-23 キヤノン株式会社 レーザ素子
JP5106260B2 (ja) * 2008-06-16 2012-12-26 キヤノン株式会社 カスケードレーザ素子
JP5328265B2 (ja) * 2008-08-25 2013-10-30 キヤノン株式会社 テラヘルツ波発生素子、及びテラヘルツ波発生装置
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5441470B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
WO2012015990A2 (en) * 2010-07-27 2012-02-02 The Regents Of The University Of California Plasmon lasers at deep subwavelength scale
KR20120087631A (ko) * 2011-01-28 2012-08-07 삼성전자주식회사 나노 구조화된 음향광학 소자, 및 상기 음향광학 소자를 이용한 광 스캐너, 광 변조기 및 홀로그래픽 디스플레이 장치
JP6062640B2 (ja) 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
US8805147B2 (en) * 2011-05-17 2014-08-12 Canon Kabushiki Kaisha Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide
US9008983B2 (en) 2011-05-17 2015-04-14 Canon Kabushiki Kaisha Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide
JP6034616B2 (ja) * 2011-09-09 2016-11-30 キヤノン株式会社 導波路及びその製造方法、ならびに電磁波分析装置
JP2013149665A (ja) * 2012-01-17 2013-08-01 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ
WO2014000046A1 (en) * 2012-06-29 2014-01-03 Hill Martin Terence Metal-insulator-metal waveguide for nano-lasers and optical amplifiers
CN102928912B (zh) * 2012-11-14 2014-04-02 北京邮电大学 一种产生法诺共振现象的金属-介质耦合谐振腔
US9231368B2 (en) 2012-11-30 2016-01-05 Thorlabs Quantum Electronics, Inc. Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices
WO2014085562A1 (en) * 2012-11-30 2014-06-05 Corning Incorporated Multiwavelength quantum cascade laser via growth of different active and passive cores
JP2014175533A (ja) * 2013-03-11 2014-09-22 Canon Inc レーザ素子
JP2014207654A (ja) * 2013-03-16 2014-10-30 キヤノン株式会社 導波路素子
CN104134860B (zh) * 2014-07-02 2016-10-19 上海大学 毫米波段共面波导馈电的单层介质板Fabry-Perot天线
CA2968925C (en) * 2014-12-03 2020-11-17 Alpes Lasers Sa Quantum cascade laser with current blocking layers
JP6190407B2 (ja) * 2015-03-09 2017-08-30 株式会社東芝 半導体発光装置およびその製造方法
US9899959B2 (en) 2015-05-22 2018-02-20 Canon Kabushiki Kaisha Element, and oscillator and information acquiring device including the element
JP7076937B2 (ja) * 2015-06-15 2022-05-30 キヤノン株式会社 半導体素子
JP6597037B2 (ja) * 2015-08-06 2019-10-30 住友電気工業株式会社 量子カスケードレーザデバイス
JP6719882B2 (ja) * 2015-10-20 2020-07-08 キヤノン株式会社 発振素子及びそれを用いた測定装置
US10461216B2 (en) * 2016-09-23 2019-10-29 Wright State University Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
CN107181037B (zh) * 2017-06-01 2020-09-15 深圳凌波近场科技有限公司 基于表面波光子晶体的开放式法布里佩罗谐振腔
JP2017157865A (ja) * 2017-06-07 2017-09-07 株式会社東芝 半導体発光装置およびその製造方法
US11074382B2 (en) 2018-01-30 2021-07-27 International Business Machines Corporation Quantum computing device design
US11784464B2 (en) * 2020-09-30 2023-10-10 Ii-Vi Delaware, Inc. Directly modulated laser
US20220344902A1 (en) * 2021-04-22 2022-10-27 Intraband LLC Semiconductor Laser Structure for Higher-Order Mode Suppression
CN113193351B (zh) * 2021-04-30 2022-04-05 南京邮电大学 人工表面等离激元宽带毫米波端射天线

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3194503B2 (ja) * 1992-06-04 2001-07-30 キヤノン株式会社 化合物半導体装置及びその製造方法
CA2132043C (en) * 1993-09-17 1999-03-23 Toshihiko Ouchi Method and apparatus for frequency modulating a semiconductor laser, and an optical communication system using the same
JP3244976B2 (ja) * 1994-12-05 2002-01-07 キヤノン株式会社 半導体レーザの駆動方法及び半導体レーザ装置及び光通信方法及びノード及び光通信システム
US6089442A (en) * 1996-04-10 2000-07-18 Canon Kabushiki Kaisha Electrode connection method
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
JPH11168263A (ja) * 1997-09-30 1999-06-22 Canon Inc 光デバイス装置及びその製造方法
JPH11168262A (ja) * 1997-09-30 1999-06-22 Canon Inc 面型光デバイス、その製造方法、および表示装置
US6055257A (en) * 1998-04-27 2000-04-25 Lucent Technologies Inc. Quantum cascade laser
US6301282B1 (en) 1998-07-29 2001-10-09 Lucent Technologies Inc. Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
JP3728147B2 (ja) * 1999-07-16 2005-12-21 キヤノン株式会社 光電気混載配線基板
JP3990846B2 (ja) * 1999-08-27 2007-10-17 キヤノン株式会社 面型光素子、その製造方法、およびこれを用いた装置
JP3927913B2 (ja) * 2003-03-05 2007-06-13 キヤノン株式会社 光電気混載装置、及びその駆動方法
JP4164423B2 (ja) * 2003-08-29 2008-10-15 キヤノン株式会社 センシング部とポインティングデバイスとを含み構成される装置
US7615787B2 (en) * 2004-03-26 2009-11-10 Canon Kabushiki Kaisha Photo-semiconductor device and method of manufacturing the same
JP4785392B2 (ja) * 2004-03-26 2011-10-05 キヤノン株式会社 テラヘルツ電磁波の発生素子の製造方法
JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
JP4881056B2 (ja) * 2006-05-01 2012-02-22 キヤノン株式会社 電磁波吸収体部を含むフォトニック結晶電磁波デバイス、及びその製造方法

Also Published As

Publication number Publication date
US7693198B2 (en) 2010-04-06
JP4857027B2 (ja) 2012-01-18
EP1863140A1 (en) 2007-12-05
US20070280319A1 (en) 2007-12-06
CN101083383A (zh) 2007-12-05
JP2007324257A (ja) 2007-12-13

Similar Documents

Publication Publication Date Title
CN101083383B (zh) 激光器装置
JP4423429B2 (ja) テラヘルツ電磁波放射素子及びその製造方法
CN101027818B (zh) 具有供以功率的谐振单元的复合材料
US8081850B2 (en) Device with tunable plasmon resonance
JP4873746B2 (ja) 発振素子
CN101471535B (zh) 激光器器件
US10277008B1 (en) Tunable laser device and method for manufacturing the same
US20030179974A1 (en) Surface plasmon devices
EP3304660B1 (en) Interband cascade lasers with low-fill factor top contact for reduced loss
US9515449B2 (en) Metal-insulator-metal waveguide for nano-lasers and optical amplifiers
JP2003177369A (ja) 半導体光変調器、それを用いたマッハツェンダ型光変調器、及び半導体光変調器の製造方法
US20150303559A1 (en) Oscillation device, reception device and sample information acquisition apparatus
CN103457669B (zh) 肖特基栅阵型太赫兹调制器及其调控方法
CN104134931A (zh) 波导、包括该波导的装置及制造该波导的方法
CN104283111A (zh) 集成光栅的楔形结构的边发射太赫兹量子级联激光器
Kundu et al. Continuous frequency tuning with near constant output power in coupled Y-branched terahertz quantum cascade lasers with photonic lattice
CN103972791B (zh) 分布式布拉格反射结构的太赫兹量子级联激光器
Chassagneux et al. Low threshold THz QC lasers with thin core regions
US20140254615A1 (en) Laser device
Hong et al. Characteristics improvement of surface-emitting distributed feedback lasers with ITO claddings
JP2006013405A (ja) 電磁波発生・検出素子およびその製造方法
Den Besten et al. Simulation and design of a 40 GHz Mach? Zehnder modulator on InP
Senica et al. Y-coupled THz Quantum Cascade Laser Frequency Comb
Pascher et al. Modeling and design of a velocity-matched traveling-wave electro-optic modulator on InP
WO2008130223A1 (en) Laser diode element

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100929

CF01 Termination of patent right due to non-payment of annual fee