CN101081395B - Combined process for cleaning contaminant on the surface of cardinal plate - Google Patents
Combined process for cleaning contaminant on the surface of cardinal plate Download PDFInfo
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- CN101081395B CN101081395B CN2006100832959A CN200610083295A CN101081395B CN 101081395 B CN101081395 B CN 101081395B CN 2006100832959 A CN2006100832959 A CN 2006100832959A CN 200610083295 A CN200610083295 A CN 200610083295A CN 101081395 B CN101081395 B CN 101081395B
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Abstract
The composite process of eliminating surface pollutant from base plate includes the steps of: providing one base plate, providing one plasma supply unit, providing one CO2 flake supplying unit, performing plasma cleaning of the base plate, and performing plasma and CO2 flake cleaning of the base plate. The composite process can eliminate organic pollutants and particles from the surface of the base plate, and has low water consumption, low power consumption and no environmental pollution.
Description
Technical field
The present invention relates to a kind of method of the surface contaminant with the combined type clean substrate, relate in particular to and a kind ofly need not expend the ample resources and the energy, and more can not cause environmental issue, and can effectively remove the method for surface contaminant of the combined type clean substrate of various organic pollutions and particulate.
Background technology
No matter be semiconductor industry, flat-panel screens (FPD) industry, printed circuit board (PCB) (PCB) industry, FPC (FPCB) industry etc. at present, the cleaning way of its product of producing, the main wet process that uses, with organic pollutions such as removal grease, fingerprint, residual solvents, and particulates such as metal or oxide.
Yet, prior art wet-cleaned technology has the chemical discharge regulation limitations, and pure water and the ever-increasing shortcoming of solvent cost, and because of using a large amount of water, solvent, chemicals, the environmental issue of deriving and the waste resource and the energy, this moment, the dry type cleaning than environmental protection was developed gradually.
Prior art is for solving the problem of above-mentioned wet-cleaned technology at present, method in conjunction with RF plasma and carbon dioxide snowflake hydro-peening, and be applied to the removing photoresistance technology of wafer, remove though it can quicken pollutant than prior art wet-cleaned technology, it also has following shortcoming: for example consuming time for a long time and energy may have damage greatly to the surface of substrate, need vacuum cavity to produce wireless frequency (RF) plasma, the vacuum equipment cost is high and is not suitable for the Rapid Cleaning of large scale flat panel workpieces.Therefore, aspect the cleaning of flat-panel screens such as TFT-LCD panel, damage is arranged at present for avoiding panel surface, so still adopt the wet type washing process, especially now the above glass substrate size of the 5th generation factory is bigger, thereby cleaning equipment is also huger, certainly relatively also suitable water consumption.And prior art dry type cleaning is as doing the removal of organic pollution with UV/O3 (ultraviolet ray/ozone), atmospheric plasma, advantage such as have environmental protection, water-saving, occupation area of equipment is little, cleaning speed is fast, but its removal to organic pollution produces effect, removal nearly unavailable fruit for particulate, therefore the deionization (De-ionized) of still need arranging in pairs or groups is washed and baking step, causes present commercialization benefit little.
Therefore, pollutant removal at above-mentioned substrate surface, wet-cleaned technology has the inferior position of the waste resource and the energy, and the dry type cleaning can only produce effect at the removal of organic pollution, if the removal that applies to particulate is the nearly unavailable fruit then, so how to redesign a kind of method of removing the surface contaminant of substrate, it can effectively promote the removal effect of organic pollution and particulate, and avoid the disappearance of prior art wet-cleaned technology and dry type cleaning, be target of the present invention.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method of the surface contaminant with the combined type clean substrate, in order to solve prior art wet-cleaned technology the disappearance of the wasting of resources, energy resource consumption and the environmental protection of using a large amount of water and chemical solvent is arranged, also overcoming simultaneously prior art dry type cleaning can only be at the removal of organic pollution, and can't effectively remove the shortcoming of particulate.
For achieving the above object, the invention provides a kind of method of the surface contaminant with the combined type clean substrate, it comprises provides a substrate step, a plasma feeding unit step is provided, a carbon dioxide snowflake feeding unit step is provided, carry out the operation of plasma hydro-peening substrate, carry out plasma and the operation of carbon dioxide snowflake hydro-peening substrate, one substrate step is provided earlier, and this substrate surface has pollutant; One plasma feeding unit step is provided again, and it is positioned at this substrate top; One carbon dioxide snowflake feeding unit step is provided, it is positioned at the substrate top and places plasma feeding unit one side, again, carry out plasma hydro-peening substrate operating procedure, this substrate plasma feeding unit therewith relatively moves to carry out plasma hydro-peening substrate, and carrying out plasma and carbon dioxide snowflake hydro-peening substrate operating procedure, the two relatively moves substrate and this plasma feeding unit and carbon dioxide snowflake feeding unit to carry out plasma and carbon dioxide snowflake hydro-peening substrate.
The method of a kind of surface contaminant with the combined type clean substrate of the present invention possesses following several point and is better than the prior art practice, and possesses remarkable efficacy as described below and promote.
1. the method for a kind of surface contaminant with the combined type clean substrate of the present invention, the method of the surface contaminant by a kind of combined type clean substrate of the present invention is implemented utilization, because it removes ability in conjunction with the organic pollutant removal ability of atmospheric plasma and the particulate of carbon dioxide snowflake, so can effectively promote the clean effect of the surface contaminant of substrate.
2. the method for a kind of surface contaminant with the combined type clean substrate of the present invention, the method of the surface contaminant by a kind of combined type clean substrate of the present invention is implemented utilization, because it is in conjunction with atmospheric plasma and carbon dioxide snowflake, the two all can be implemented under normal pressure, clean so can be applicable to the continous way of large scale flat panel workpieces, and carbon dioxide also can be simultaneously produces the source as dissociate gas and the carbon dioxide snowflake of atmospheric plasma.
3. the method for a kind of surface contaminant with the combined type clean substrate of the present invention, the method for the surface contaminant by a kind of combined type clean substrate of the present invention is implemented utilization, and it can be operated under normal pressure, thus do not need vacuum cavity, thereby can reduce equipment cost.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the method flow schematic diagram of the present invention with the surface contaminant of combined type clean substrate; And
Fig. 2 carries out the cleaning base plate schematic diagram for the present invention with the method for the surface contaminant of combined type clean substrate.
Wherein, Reference numeral:
The method of the surface contaminant of S1 combined type clean substrate
Step S10 provides a substrate
Step S20 provides a plasma feeding unit
Step S30 provides a carbon dioxide snowflake feeding unit
Step S40 carries out the operation of plasma hydro-peening substrate
Step S50 carries out plasma and the operation of carbon dioxide snowflake hydro-peening substrate
10 substrates
20 plasma feeding units
30 carbon dioxide snowflake feeding units
40 block pieces
50 getter devices
The specific embodiment
As shown in Figure 1, the method of a kind of surface contaminant with the combined type clean substrate of the present invention, the method S1 of the surface contaminant of this combined type clean substrate comprises provides a substrate (step S10), a plasma feeding unit (step S20) is provided, a carbon dioxide snowflake feeding unit (step S30) is provided, carry out plasma hydro-peening substrate operation (step S40) and carry out plasma and carbon dioxide snowflake hydro-peening substrate operation (step S50).
With reference to figure 1 and Fig. 2, the method of a kind of surface contaminant with the combined type clean substrate of the present invention, the method S1 of the surface contaminant of this combined type clean substrate, one substrate (step S10) is provided earlier, substrate 10 surfaces have pollutant, and this substrate 10 is removable, promptly is substrate 10 to be arranged on the motion (not shown) move to reach substrate; One plasma feeding unit (step S20) is provided again, this plasma feeding unit 20 is arranged at substrate 10 tops, and plasma feeding unit 20 is removable, in like manner promptly is that plasma feeding unit 20 is arranged on the motion (not shown) moving; Again, one carbon dioxide snowflake feeding unit (step S30) is provided, this carbon dioxide snowflake feeding unit 30 is positioned at substrate 10 tops, with a side that places plasma feeding unit 20, and carbon dioxide snowflake feeding unit 30 is removable, more specifically, carbon dioxide snowflake feeding unit 30 is arranged on the motion (not shown) moving; The method also comprises a block piece 40, is arranged between plasma feeding unit 20 and the carbon dioxide snowflake feeding unit 30, and in order to the elimination electrostatic charge, and the carbon dioxide sequestration snowflake erupts the interference that causes for plasma feeding unit 20; Reach aforesaid substrate 10 peripheries and can also be provided with a getter device 50, in order to inhale waste gas and the pollutant that behind aforesaid substrate 10 surface cleanings, is produced; Carry out plasma hydro-peening substrate operation (step S40) again again, this substrate 10 relatively moves to carry out the plasma eruption with cleaning base plate 10 with plasma feeding unit 20; At last, carry out plasma and carbon dioxide snowflake hydro-peening substrate operation (step S50), substrate 10 relatively moves to carry out the pollutant on plasma and carbon dioxide snowflake hydro-peening aforesaid substrate 10 surfaces with plasma feeding unit 20 and carbon dioxide snowflake feeding unit 30.
The method of a kind of surface contaminant with the combined type clean substrate of the present invention, the method S1 of the surface contaminant of this combined type clean substrate, above-mentioned block piece 40 are that an ion produces the source.Again, the method of a kind of surface contaminant with the combined type clean substrate of the present invention, the method S1 of the surface contaminant of this combined type clean substrate, above-mentioned exposure substrate 10 relatively moves with plasma feeding unit 20, for substrate 10 phase article on plasma feeding units 20 move; Or, for plasma feeding unit 20 moves relative to substrate 10.In addition, above-mentionedly carry out plasma hydro-peening substrate operating procedure (step S40) and carry out plasma and carbon dioxide snowflake hydro-peening substrate operating procedure (step S50), can carry out simultaneously or the front and back step is carried out.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (9)
1. the method with the surface contaminant of combined type clean substrate is characterized in that, comprises following steps:
One substrate is provided, and this substrate surface has pollutant;
One plasma feeding unit is provided, and this plasma feeding unit is positioned at this substrate top;
One carbon dioxide snowflake feeding unit is provided, and this carbon dioxide snowflake feeding unit is positioned at this substrate top and places a side of this plasma feeding unit;
Carry out the operation of plasma hydro-peening substrate, this substrate and this plasma feeding unit relatively move to carry out plasma hydro-peening substrate; And
Carry out the operation of plasma and carbon dioxide snowflake hydro-peening substrate, this substrate and this plasma feeding unit and this carbon dioxide snowflake feeding unit relatively move to carry out plasma and carbon dioxide snowflake hydro-peening substrate;
Wherein, this method also comprises:
One block piece is set between this plasma feeding unit and this carbon dioxide snowflake feeding unit,, and isolates the interference that this carbon dioxide snowflake eruption causes for this plasma feeding unit in order to the elimination electrostatic charge.
2. the method for the surface contaminant of combined type clean substrate according to claim 1 is characterized in that, this block piece is that an ion produces the source.
3. the method for the surface contaminant of combined type clean substrate according to claim 1 is characterized in that, this substrate is removable.
4. the method for the surface contaminant of combined type clean substrate according to claim 3 is characterized in that, this substrate of this method and this plasma feeding unit relatively move and move relative to this plasma feeding unit for this substrate.
5. the method for the surface contaminant of combined type clean substrate according to claim 1 is characterized in that, this plasma feeding unit is removable.
6. the method for the surface contaminant of combined type clean substrate according to claim 5 is characterized in that, this substrate of this method and this plasma feeding unit relatively move and move relative to this substrate for this plasma feeding unit.
7. the method for the surface contaminant of combined type clean substrate according to claim 1 is characterized in that, this carbon dioxide snowflake feeding unit is removable.
8. the method for the surface contaminant of combined type clean substrate according to claim 1, it is characterized in that, this method carry out plasma hydro-peening substrate operating procedure and this carries out plasma and carbon dioxide snowflake hydro-peening substrate operating procedure, can carry out simultaneously or the front and back step is carried out.
9. the method for the surface contaminant of combined type clean substrate according to claim 1 is characterized in that, this substrate peripheral can also be provided with a getter device, in order to inhale waste gas and this pollutant that is produced after this substrate surface cleaning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100832959A CN101081395B (en) | 2006-05-31 | 2006-05-31 | Combined process for cleaning contaminant on the surface of cardinal plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100832959A CN101081395B (en) | 2006-05-31 | 2006-05-31 | Combined process for cleaning contaminant on the surface of cardinal plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101081395A CN101081395A (en) | 2007-12-05 |
| CN101081395B true CN101081395B (en) | 2010-12-22 |
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| CN2006100832959A Active CN101081395B (en) | 2006-05-31 | 2006-05-31 | Combined process for cleaning contaminant on the surface of cardinal plate |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101296659B1 (en) * | 2008-11-14 | 2013-08-14 | 엘지디스플레이 주식회사 | Washing device |
| CN103203341B (en) * | 2013-03-17 | 2017-12-26 | 上海宏科半导体技术有限公司 | A kind of cleaning device and its cleaning method for electronic product packaging tray |
| CN104492761A (en) * | 2014-12-24 | 2015-04-08 | 京东方科技集团股份有限公司 | Mask cleaning device and cleaning method thereof |
| TWI697953B (en) * | 2018-06-28 | 2020-07-01 | 雷立強光電科技股份有限公司 | Cleaning method |
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