CN101076920A - 用于雷达收发机的天线装置 - Google Patents
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- 230000005670 electromagnetic radiation Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 230000003137 locomotive effect Effects 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 16
- 239000000758 substrate Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本发明涉及一种用于雷达收发机的天线装置,尤其是用于机动车区域环境中的距离和/或速度的测定,其中至少一个天线设置在一个芯片(100)上,该芯片包含雷达收发机的发射及接收单元(105)的至少一部分,其特征在于:该至少一个天线包括一个设置在芯片上的第一部分及一个离该第一部分(110)一定距离设置的及通过辐射耦合到该第一部分上的第二部分(210)。
Description
现有技术
本发明涉及根据权利要求1前序部分的用于雷达收发机的天线装置,尤其是用于机动车区域环境中的距离和/或速度的测定。
这种雷达收发机,即发射/接收模块工作在微波及毫米波范围中及用于测定空间中物体、尤其是机动车的方位或用于速度确定、尤其是机动车速度确定。这种雷达收发机尤其用于驾驶员辅助系统,该系统例如用于确定在一个机动车前面行驶的另一机动车的距离及用于距离的调节。在此情况下为了测定空间中物体的方位或确定其速度,这样一个雷达收发机发射电磁波形式的微波、毫米波(hoechstfrequente)信号,该信号被目标物反射及再由该雷达收发机接收并进一步处理。在此情况下常常由多个这样的雷达收发机连接成一个整体模块。当用于机动车的情况下使用的频率在76至81GHz的范围中。
由DE 103 00 955 A1公开了一种用于微波及毫米波的雷达收发机,其中在一个以多层构成的部件中既设有发射及接收单元也设有天线。这些层结构需要一些连接,这些连接必需这样实施,以致可以传送微波、毫米波的HF信号。为了可作到损耗相当小地形成这种HF过渡,在这种雷达收发机上对加工有很高的要求。
由DE 196 48 203 A1公开了一种多射束的机动车雷达系统。在该雷达系统中发射及接收单元以及天线设置在不同的载体上。
为了产生在机动车中常使用的76至81GHz的频率,经常使用耿氏振荡器。此外,通常使用GaAsMMIC’s(单片微波集成电路)。在最近也使用SiGe作为这种芯片的材料。借助该材料在此期间也可达到大于200GHz的极限频率。这种芯片通常用倒装芯片技术施加在例如由陶瓷,LTCC(低温共烧结陶瓷)作的载体、印刷电路板或软板上。此外该芯片也可通过焊接来接线。在该载体材料上常常还设有其它分布网络,部件及天线。在此情况下该结构及连接技术带有公差,难以控制及昂贵。此外在高频时它具有差的电特性。
为了避免该缺点,在本申请人的一个未在先公开的卷号为309373的申请中描述了一种雷达收发机,它不但具有可简单制造的结构及小的结构尺寸,而且尤其是也适合安装在公知的电路载体上,例如通常的印刷电路板上。在该雷达收发机上发射及接收单元并列地布置在一个单片的芯片上的一个平面上。此外在芯片的该平面中设有至少一个片状天线。由于SiGe芯片的电有效层厚度在4μm至20μm的范围中,优选为11μm,但用本身公知的片状天线仅可达到千分之几的带宽。在大多数情况下芯片本身具有约300μm的厚度。
因此本发明的任务在于,获得一种用于具有特别是很薄的电起作用的氧化层的单片雷达收发机的天线装置,它在高的工作频率、尤其在76至81GHz范围中时可实现大的可复现性,高的可靠性及宽的带宽。此外这种天线装置可用简单及由此成本合适的方式制造。
本发明的优点
该任务将通过具有权利要求1的特征的、用于雷达收发机的天线装置,尤其用于机动车区域环境中的距离和/或速度测定的驾驶员辅助系统的天线装置来解决。
本发明的基本构思在于,在具有很薄的电起作用层的芯片上-所述层也包含发射/接收单元-设置一个天线装置,该天线装置代替片状天线使用带有平行线馈电、即差分馈电线的印刷偶极子。在此情况下该天线装置包括一个设置在芯片上的第一部分及一个离第一部分一定距离设置的及通过辐射耦合到第一部分上的第二部分。通过天线分成两部分达到了有利的带宽增大。此外降低了辐射阻抗。
在一个非常有利的实施形式中,天线的第二部分设置在一个雷达天线罩上。该雷达天线罩优选构成一个完全封装芯片的壳体。
在一个有利的实施形式中,第一部分是一个第一发射和/或接收偶极子及第二部分是一个第二发射和/或接收偶极子。
第一发射/接收偶极子优选具有两个通过一个中间空间彼此分开的半部分。它以一个平行线馈电结构,即用差分馈电线或用对称馈电工作。
根据一个有利的实施形式,第一发射和/或接收偶极子具有发射/接收的电磁辐射的大约一个波长的长度。
在该情况下第二发射和/或接收偶极子是一个不中断的通常的偶极子,它具有发射/接收的电磁辐射的大约半波长的长度。
为了良好地场耦合,建议,第二发射和/或接收偶极子具有一个宽度,该宽度基本上相应于第一发射和/或接收偶极子的宽度。通过该结构可达到波阻抗的进一步降低。在此情况下馈电可用两个微带线来实现。
两个发射和/或接收偶极子的尺寸及第一发射和/或接收偶极子与第二发射和/或接收偶极子之间的距离基本上与使用的频率相关,其中该距离与频率的倒数成正比地变化。在这里所考虑的76至81GHz的频率范围中,第一发射和/或接收偶极子与第二发射和/或接收偶极子之间的距离在200与300μm之间,尤其为250μm。
可以理解,本发明并不被限制在76至81GHz的频率范围上,而也可延伸到其它的频率范围,在此情况下,尺寸与频率相关地以相应方式缩放,这就是说,这时例如两个发射和/或接收偶极子之间的距离及天线的尺寸将对频率相应适配地改变。
附图说明
本发明的其它优点及特征为以下对实施例的说明及图示的主题。
附图中表示:
图1:具有本发明的天线装置的单片结构的雷达收发机的概要剖视图;
图2;多个图1中所示雷达收发机的配置;
图3:与本发明天线装置在单片结构中的雷达收发机的另一实施例,其中雷达收发机的芯片以倒装芯片技术设置在一个衬底上;
图4:四个并列设置的、图3中所示的雷达收发机;
图5:雷达收发机与本发明的天线装置在单片结构中的另一实施例,其中雷达收发机的芯片以倒装芯片技术设置在一个衬底上;
图6:四个并列设置的、图5中所示的雷达收发机;
图7a:根据本发明的用于雷达收发机的一个天线装置的概示图;
图7b:取下雷达天线罩时的图7a中所示的天线装置;
图7c:具有未示出的第二发射/接收偶极子的图7b中所示的天线装置;及
图8:在一个芯片上的第一发射/接收偶极子及第二发射/接收偶极子的布置的概要示图。
具体实施方式
在图1中所示的雷达收发机中,在一个SiGe芯片100上不仅设置了收发机的所有发射/接收装置105,而且也设置了一个以下将详细描述的天线装置。在芯片上设有一个具有平行线馈电、即差分馈电线的偶极子。为了能达到高阻抗,该偶极子110以电压馈电工作。
在离天线的第一部分110的距离d上,在一个雷达天线罩200上设有天线的第二部分210。如果该天线的第二部分210大约以250μm的距离设置在300μm厚的雷达天线罩上,则波阻抗下降到约800欧姆上。该雷达天线罩同时用作壳体,其中芯片100完全被封闭,这尤其由图2可以看出,其中四个这样的雷达收发机并列地设置在一个载体板300上。具有厚度约11μm的SiGe芯片100的有效微波层被设置在一个硅衬底310上,该硅衬底通过一个中间层320-一个所谓的下填充-固定在一个衬底300上。这里整个装置通过焊线400连接,这些焊线为设置在SiGe芯片100上的焊片(Bondpatch)410与设置在载体300上的焊片420之间的电导线。
图7中概要地示出该天线装置。在图7a的概示图中雷达天线罩200覆盖着该天线装置。这里设置在雷达天线罩200上的第二天线210具有离第一天线110的距离d(参见图7b)。第一天线110通过双线导线111,112馈电(参见图7c及图8)。该馈电例如设计在50欧姆上。在一级近似上它被设计成与频率无关。当微波层的厚度为11μm时,带状导线的宽度优选约为约20μm。在该例中两个带状导线之间的中间空间(“间隙”)114也为约20μm。如果芯片100的有效微波层的层厚例如仅为5μm,带状导线111,112的带状导线宽度被选择为约10μm及间隙114被选择为约10μm。这些距离可借助本身公知的电路仿真或电场仿真或测量技术来确定。
如图7b,7c及图8中所示,天线的设置在雷达天线罩200上的第二部分210是一个不中断的偶极子,它具有发射/接收的电磁波的半波长的长度。为了良好的场耦合它具有与SiGe芯片100上的整波长偶极子大致相同的宽度。通过该结构使波阻抗下降到100欧姆上。以此方式可使第一发射/接收偶极子110的馈电用一些50欧姆的微带线来实现,它们的宽度及距离当SiGe芯片100的高度为11μm时各为20μm。
图3及4中示出用倒装芯片技术的SiGe芯片100的结构。该SiGe芯片100被设置在一个硅载体310上。它具有一个接触面120来取代焊片410,这些接触面以倒装芯片技术通过焊点510触点接通在接触面520上。这些接触面520被设置在一个载体500上。在SiGe芯片100上又设置了天线的第一部分110,即第一发射/接收偶极子110。天线的第二部分,即第二发射/接收偶极子210在该例中被设置在衬底500的背着SiGe芯片100的一侧上。衬底500必需由一种材料构成,该材料可允许微波范围中很高频率的电磁波通过。
在图5及6所示的另一实施例中,与图3及4所示的实施例中相同的单元设有相同的标号,由此在其说明上可参考以上所有的内容。与图3及4中所示的实施例不同地,在图5及6所示的实施例中示出这样一个倒装芯片结构,其中设置了不再绝对地用于通过很高频率的电磁波及由此设有一些孔605的成本上有利的低频衬底600,在其上设置了一些接触面620,用于借助于焊点610与硅载体310上设置的SiGe芯片100的该倒装芯片结构的接触。在低频衬底600的这些孔605中设有第二发射/接收偶极子210,例如在一个雷达天线罩200或一个壳体上。
上述天线装置的优点在于高的带宽,它通过用差分馈电的整波长激励来实现。另一优点在于,雷达天线罩200可被用作壳体封装,以致整个装置可对水/露水密封及对公差不敏感。此外在工作频率(高频)时不需要由芯片100到衬底上的过渡(Uebergaenge),而电接触是通过焊线或通过低频范围中的倒装芯片触点接通来实现的。通过中间层320,即所谓的下填充可补偿膨胀系数上的差别,由此得到SiGe芯片100在载体300上的可靠固定,该SiGe芯片是真正的雷达收发机。
通过焊线400的触点接通可在封装以前实现。在图3至6所示实施例的情况下衬底可附加地具有天线结构。此外天线下面的面可被用于加热。
上述的天线装置已借助一个SiGe芯片100作出了说明。但可以理解的是,本发明并不被限制在硅-锗技术的芯片上,而也可在SiGeC芯片或BiCMOS芯片或SiC芯片上应用。
Claims (11)
1.用于雷达收发机的天线装置,尤其是用于机动车区域环境中的距离和/或速度的测定,其中至少一个天线设置在一个芯片(100)上,该芯片包含雷达收发机的发射及接收单元(105)的至少一部分,其特征在于:该至少一个天线包括一个设置在芯片上的第一部分及一个离该第一部分(110)一定距离设置的并且通过辐射耦合到第一部分上的第二部分(210)。
2.根据权利要求1的天线装置,其特征在于:天线的第二部分(210)被设置在一个雷达天线罩(200)上。
3.根据权利要求2的天线装置,其特征在于:雷达天线罩(200)构成一个完全封装芯片(100)的壳体。
4.根据以上权利要求中一项的天线装置,其特征在于:第一部分是一个第一发射和/或接收偶极子(110)及第二部分是一个第二发射和/或接收偶极子(210)。
5.根据权利要求4的天线装置,其特征在于:第一发射/接收偶极子(110)具有两个通过一个中间空间彼此分开的半部分。
6.根据权利要求5的天线装置,其特征在于:设有第一发射/接收偶极子(110)的一个差分或对称的馈电部分。
7.根据权利要求4至6中一项的天线装置,其特征在于:第一发射和/或接收偶极子(110)具有发射/接收的电磁辐射的大约一个波长的长度。
8.根据权利要求4的天线装置,其特征在于:第二发射和/或接收偶极子(210)是一个不中断的通常的偶极子或面辐射器。
9.根据权利要求8的天线装置,其特征在于:第二发射和/或接收偶极子(210)具有发射/接收的电磁辐射的大约半波长的长度。
10.根据权利要求8或9的天线装置,其特征在于:第二发射和/或接收偶极子(210)具有一个宽度,该宽度基本上相应于第一发射和/或接收偶极子(110)的宽度。
11.根据权利要求4至10中一项的天线装置,其特征在于:在76-81GHz的频率范围中,第一发射和/或接收偶极子(110)与第二发射和/或接收偶极子(210)之间的距离在200与300μm之间,尤其为250μm。
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DE102004059333.7 | 2004-12-09 | ||
DE102004059333A DE102004059333A1 (de) | 2004-12-09 | 2004-12-09 | Antennenanordnung für einen Radar-Transceiver |
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CN101076920A true CN101076920A (zh) | 2007-11-21 |
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CNA2005800425496A Pending CN101076920A (zh) | 2004-12-09 | 2005-11-14 | 用于雷达收发机的天线装置 |
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US (1) | US20080316126A1 (zh) |
EP (1) | EP1825561B1 (zh) |
CN (1) | CN101076920A (zh) |
DE (1) | DE102004059333A1 (zh) |
WO (1) | WO2006061307A1 (zh) |
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CN103004017A (zh) * | 2010-07-30 | 2013-03-27 | 丰田自动车株式会社 | 天线罩 |
CN107196038A (zh) * | 2016-03-15 | 2017-09-22 | 德尔福技术有限公司 | 包括基片集成波导的信号装置 |
CN108375757A (zh) * | 2018-02-01 | 2018-08-07 | 深圳市华讯方舟微电子科技有限公司 | 用于相控阵发射系统的发射组件及其安装结构 |
WO2020001490A1 (zh) * | 2018-06-26 | 2020-01-02 | 苏州宝时得电动工具有限公司 | 应用雷达的电动设备 |
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DE102004063541A1 (de) * | 2004-12-30 | 2006-07-13 | Robert Bosch Gmbh | Antennenanordnung für einen Radar-Transceiver |
DE102008044355A1 (de) | 2008-12-04 | 2010-06-10 | Robert Bosch Gmbh | Modulares Radarsystem |
DE102009026475A1 (de) | 2009-05-26 | 2010-12-02 | Robert Bosch Gmbh | Verfahren zur Herstellung eines elektronischen Bauelementes und elektronisches Bauelement |
DE102010029780A1 (de) * | 2010-06-08 | 2011-12-22 | Robert Bosch Gmbh | Vorrichtung zur seitlichen Umfeldüberwachung eines Fahrzeugs |
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DE102010040809A1 (de) * | 2010-09-15 | 2012-03-15 | Robert Bosch Gmbh | Planare Gruppenantenne mit in mehreren Ebenen angeordneten Antennenelementen |
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- 2004-12-09 DE DE102004059333A patent/DE102004059333A1/de not_active Ceased
-
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- 2005-11-14 WO PCT/EP2005/055951 patent/WO2006061307A1/de active Application Filing
- 2005-11-14 CN CNA2005800425496A patent/CN101076920A/zh active Pending
- 2005-11-14 US US11/792,895 patent/US20080316126A1/en not_active Abandoned
- 2005-11-14 EP EP05803270A patent/EP1825561B1/de not_active Expired - Fee Related
Cited By (6)
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CN103004017A (zh) * | 2010-07-30 | 2013-03-27 | 丰田自动车株式会社 | 天线罩 |
US9110162B2 (en) | 2010-07-30 | 2015-08-18 | Toyota Jidosha Kabushiki Kaisha | Antenna cover |
CN107196038A (zh) * | 2016-03-15 | 2017-09-22 | 德尔福技术有限公司 | 包括基片集成波导的信号装置 |
CN107196038B (zh) * | 2016-03-15 | 2021-11-09 | 安波福技术有限公司 | 包括基片集成波导的信号装置 |
CN108375757A (zh) * | 2018-02-01 | 2018-08-07 | 深圳市华讯方舟微电子科技有限公司 | 用于相控阵发射系统的发射组件及其安装结构 |
WO2020001490A1 (zh) * | 2018-06-26 | 2020-01-02 | 苏州宝时得电动工具有限公司 | 应用雷达的电动设备 |
Also Published As
Publication number | Publication date |
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US20080316126A1 (en) | 2008-12-25 |
EP1825561A1 (de) | 2007-08-29 |
WO2006061307A1 (de) | 2006-06-15 |
EP1825561B1 (de) | 2012-03-28 |
DE102004059333A1 (de) | 2006-06-14 |
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