CN101075648A - Method for radiating, packing and forming light-emitting diodes - Google Patents
Method for radiating, packing and forming light-emitting diodes Download PDFInfo
- Publication number
- CN101075648A CN101075648A CNA2006100805650A CN200610080565A CN101075648A CN 101075648 A CN101075648 A CN 101075648A CN A2006100805650 A CNA2006100805650 A CN A2006100805650A CN 200610080565 A CN200610080565 A CN 200610080565A CN 101075648 A CN101075648 A CN 101075648A
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- China
- Prior art keywords
- pedestal
- chip
- welding material
- light
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- Led Device Packages (AREA)
Abstract
A LBD radiation package method of upgraded radiation performance includes a base and LBD chip. Oxidize the surface position to be installed with chip and plate with alloy layer and put on jointing material on the layer. Plate the back side of the chip with alloy layer and joint it with the jointing material and heat treatment by high temperature furnace to form a stable structure. Finally accomplish it with lining process.
Description
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of light emitting diode construction with conductive structure.
Background technology
Along with the light-emitting diode manufacturing technology is constantly progressive, and the exploitation of new material, making the current High Power LED that develops, its energy efficiency all significantly rises, the electrorheological that unit are is passed through is big, thereby the effect heat that chip produced also gradually raises.Yet encapsulation LED material therefor, be generally resin compound with effect of heat insulation, its heat-conducting effect is not good, therefore if coat entire chip and electrode loop with it, can't dispel the heat smoothly, very easily form one and be close to the environment that insulation is sealed, effect heat thus will become the one of the main reasons that causes the light-emitting diode deterioration, influences its luminous efficiency.
Therefore under the situation that adopts above-mentioned package structure for LED, become best heat radiation approach in order to pedestal (SMD LED surface-mount device LED) or the lead frame (support rack type) of installing light-emitting diode chip for backlight unit.For light-emitting diode chip for backlight unit is fixed on the pedestal, between this chip and pedestal, layer of soldering material must be set in advance, but because of the encapsulating structure of light-emitting diode must be taken its heat radiation approach and radiating efficiency into account, therefore just must careful selection on welding material, in prior art early, use elargol (Ag Paste) usually, the position of elargol between fixed chip and pedestal (or lead frame), also when light-emitting diode chip for backlight unit is worked, conduction of heat by elargol, rapidly the effect heat conduction of this chip is gone out, avoid light-emitting diode chip for backlight unit effect thermal impact occurring and cause light-emitting diode to produce the phenomenon of light decay.
But along with the effect heat of High Power LED is significantly grown up, when the electric current of light-emitting diode greater than after to a certain degree, the effect heat that the thermal conductivity of traditional elargol and thermal coefficient of expansion can't be loaded and be produced, thereby cause the light decay of light-emitting diode chip for backlight unit, cause the not enough even inefficacy of light-emitting diode luminance.Therefore the application that the prior art after is considered High Power LED more and more widely, needed brightness is also more and more higher, its effect heat also can significantly improve comparatively speaking, when encapsulating except adopting little pedestal (or lead frame) material of conductive coefficient height and thermal coefficient of expansion and light-emitting diode chip for backlight unit difference, more on welding material, select the alloy material for use, as terne metal (PbSn), sn-ag alloy (AgSn) or indium (In) etc., to improve the heat conduction efficiency of light-emitting diode.
But because pedestal adopts high conductivity material such as copper or tin metal mostly is main material, when carrying out chip and pedestal connection process, to become liquid through high temperature melting as the alloy of welding material earlier because need, carry out engaging of chip and pedestal again, yet with copper or tin metal is that the pedestal of main material can be because action of high temperature cause base-plates surface generation oxidation, thereby causes alloy and pedestal tackness deficiency as welding material; In addition, because chip can't form common golden structure with material as the alloy of welding material, therefore also have the shortcoming of tackness deficiency, make light emitting diode construction be easy to generate and come off, and influence the heat conduction efficiency of this light-emitting diode its effect heat when work.Above-mentioned shortcoming has become those skilled in the art's problem anxious to be solved.
Summary of the invention
At the problems referred to above, main purpose of the present invention is to provide a kind of method for radiating, packing and forming light-emitting diodes, carry out anti-oxidant treatment by the base-plates surface that at first desire is provided with light-emitting diode chip for backlight unit, and plate one deck gold layer altogether on the surface that this pedestal and chip are desired to connect, again by the welding material, make this welding material firm metal alloy of gold layer composition together, thus, except improving the tackness of this welding material, outside the relative position of fixing this chip and pedestal, also can be used as heat conduction approach with conduction of heat.
To achieve these goals, the invention provides a kind of method for radiating, packing and forming light-emitting diodes, its structure mainly comprises pedestal and light-emitting diode chip for backlight unit, wherein at first pedestal is waited that the surface of position that chip is set at high temperature utilizes liquid nitrogen to carry out anti-oxidant treatment, plate one deck gold layer altogether on the surface of sticking together of this pedestal then, and on the common gold layer of the default chip position of this pedestal, welding material is set, in addition, also plate one deck gold layer altogether on the face sticking together of chip, and the face that sticks together of this chip combined with welding material, make common gold layer form firm metal alloy structure by the high temperature furnace heat treated simultaneously with welding material, thereby chip is fixed on the pedestal, carries out the routing processing procedure at last again to finish this light emitting diode construction.
Description of drawings
Fig. 1 (A)～(B) is a manufacturing process cutaway view of the present invention ();
Fig. 2 is a manufacturing process cutaway view of the present invention (two);
Fig. 3 is a manufacturing process cutaway view of the present invention (three);
Fig. 4 is a manufacturing process cutaway view of the present invention (four);
Fig. 5 (S1)～(S5) is a manufacturing process calcspar of the present invention;
Fig. 6 is an another kind of routing execution mode cutaway view of the present invention.
In the accompanying drawing, the list of parts of each label representative is as follows:
1...... pedestal 11...... sticks together the surface
2...... golden altogether layer 3...... welding material
4...... light-emitting diode chip for backlight unit 41...... sticks together face
5...... lead
Embodiment
Below will manufacture method of the present invention be illustrated by the structure cutaway view flow process of Fig. 1 to Fig. 4.Present embodiment is that example describes with the light-emitting diode (SMT) of SMD LED surface-mount device LED, and this light emitting diode construction mainly comprises pedestal 1, conduct common golden material, welding material 3 and the light-emitting diode chip for backlight unit 4 of gold layer 2 altogether.At first with reference to Fig. 1 (A)～(B), pedestal 1 is provided in advance, this pedestal 1 is made by the high-termal conductivity material, as copper metal or aluminum metal etc., also can be circuit board (PCB) with conductive force, pedestal 1 is heated to 300 ℃ or above temperature through high temperature furnace, spray liquid nitrogen (N in the pedestal 1 default surface 11 of sticking together again
2) carry out surface treatment, to prevent the sticking together that surface 11 at high temperature produces oxidation of pedestal 1 can't with chips incorporate; Utilize process technology to plate one deck gold layer 2 altogether on surperficial 11 in pedestal 1 default sticking together afterwards, this golden altogether layer 2 is made of materials such as gold, Sillim or silver metals, and the pedestal 1 that will have common gold layer 2 more is positioned on the clamp for machining.
Then with reference to Fig. 2, on waiting to be provided with the position of common gold layer 2 of chip, this provides an an amount of sheet welding material 3, this welding material 3 is the alloy material, is combined into the material of alloy structure as the material of easy gold together such as Sillim's alloy (AuSn) or sn-ag alloy (AgSn) layer 2; Cooperation is with reference to Fig. 3, the face that sticks together 41 that to desire the light-emitting diode chip for backlight unit 4 that combines with pedestal 1 again also plates one deck gold layer 2 altogether earlier, again chip 4 is placed on the upper end of welding material 3, the face that sticks together 41 of chip 4 is combined with welding material 3, simultaneously said structure is carried out heat, make welding material 3 produce fusing, and, make the common gold layer 2 of pedestal 1 and chip 4 all evenly be coated with welding material 3 chip 4 move left and right on binding site; Then with reference to Fig. 4, after welding material 3 cooling, be combined into firm metal alloy structure with the common gold layer 2 of pedestal 1 and chip 4, chip 4 is completely fixed on pedestal 1, connect lead 5 by the routing technology more at last and form positive and negative electrode, to finish this light-emitting diode structure.
Represent this method for manufacturing light-emitting as follows with block flow diagram once more among Fig. 5: pedestal 1 at first is provided and 41 at high temperature utilizes liquid nitrogen to carry out anti-oxidant treatment (S1) to the surface of sticking together of pedestal 1, the face that sticks together 41 that sticks together surface 41 and light-emitting diode chip for backlight unit 4 with pedestal 1 all plates one deck gold layer 2 (S2) altogether afterwards, on waiting to be provided with common gold layer 2 position of chip, pedestal 1 provides welding material 3 then, again chip 4 is positioned over (S3) on the welding material 3, make the face that sticks together that sticks together surface 11 and chip 4 41 of pedestal 1 evenly be coated with welding material 3 and form stable metal alloy structure (S4) by the high temperature furnace heat treated, carry out the connection (S5) of both positive and negative polarity at last by the routing processing procedure, to finish this light emitting diode construction.
In addition, above-mentioned manufacture method also may be implemented in the heat conduction frame in the support rack type light-emitting diode kenel and the secure bond of chip except that being applicable to the described surface-mounting LED of present embodiment; In addition, with reference to Fig. 6, the positive and negative electrode of this light emitting diode construction except above-mentioned utilize on the same surface that the routing technology is located at chip 4, also the alloy structure on the face that sticks together 41 of chip 4 can be formed electric pathway, and at the front of chip 4 connection lead 5, make lead 5 for anodal, the face that sticks together 41 of chip 4 is negative pole, perhaps both also interchangeable polarities of electrode.
The above is the preferred embodiments of the present invention only, is not so promptly limits claim of the present invention, and every equivalence of doing according to the present patent application claim and description changes or modifies, and all should be included in the claim of the present invention.
Claims (13)
1. method for radiating, packing and forming light-emitting diodes, its step comprises:
A) provide pedestal and light-emitting diode chip for backlight unit, and under hot environment at first the surface to described pedestal carry out anti-oxidant treatment;
B) on described pedestal and described chip surface to be engaged, all plate one deck gold layer altogether;
C) provide welding material, described welding material is arranged on the described pedestal, more described chip is placed on the described welding material;
D), make described welding material and the described layer of gold altogether form the metal alloy structure, so that described chip firmly is connected with described pedestal by the high temperature furnace heat treated.
2. the method for claim 1, wherein said pedestal is made by the material of high-termal conductivity.
3. the method for claim 1, the material of wherein said pedestal mainly comprises any of copper metal or aluminum metal.
4. the method for claim 1, wherein said pedestal is a circuit board.
5. the method for claim 1, wherein said pedestal is a lead frame.
6. the method for claim 1, wherein the hot environment described in a step has 300 ℃ or above temperature.
7. the method for claim 1, wherein the anti-oxidant treatment described in a step further is included in described base-plates surface and sprays liquid nitrogen.
8. the method for claim 1, the material of the wherein said layer of gold altogether be any of golden, Sillim or silver etc.
9. the method for claim 1, wherein said welding material is the alloy material.
10. the method for claim 1, wherein said welding material is any of Sillim's alloy or sn-ag alloy.
11. the method for claim 1, its step further comprises:
E) utilize the routing processing procedure, finish the electrical connection of described positive and negative electrode by lead.
12. method as claimed in claim 11, the lead of wherein said positive and negative electrode all are arranged on the same surface of described chip.
13. method as claimed in claim 11 wherein is provided with unitary electrode by lead on the surface of described chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100805650A CN101075648A (en) | 2006-05-17 | 2006-05-17 | Method for radiating, packing and forming light-emitting diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100805650A CN101075648A (en) | 2006-05-17 | 2006-05-17 | Method for radiating, packing and forming light-emitting diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101075648A true CN101075648A (en) | 2007-11-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100805650A Pending CN101075648A (en) | 2006-05-17 | 2006-05-17 | Method for radiating, packing and forming light-emitting diodes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101075648A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012025024A1 (en) * | 2010-08-21 | 2012-03-01 | Byd Company Limited | Semiconductor chip assembly and method of preparing the same |
| CN102376655A (en) * | 2011-10-28 | 2012-03-14 | 三星半导体(中国)研究开发有限公司 | Chip packaging structure with metal layer |
| CN108389949A (en) * | 2018-02-11 | 2018-08-10 | 深圳市润沃自动化工程有限公司 | LED encapsulation method |
| CN110350061A (en) * | 2019-07-10 | 2019-10-18 | 佛山市国星半导体技术有限公司 | A kind of LED chip, packaging and packaging method exempted from packaging plastic |
-
2006
- 2006-05-17 CN CNA2006100805650A patent/CN101075648A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012025024A1 (en) * | 2010-08-21 | 2012-03-01 | Byd Company Limited | Semiconductor chip assembly and method of preparing the same |
| CN102376655A (en) * | 2011-10-28 | 2012-03-14 | 三星半导体(中国)研究开发有限公司 | Chip packaging structure with metal layer |
| CN108389949A (en) * | 2018-02-11 | 2018-08-10 | 深圳市润沃自动化工程有限公司 | LED encapsulation method |
| CN110350061A (en) * | 2019-07-10 | 2019-10-18 | 佛山市国星半导体技术有限公司 | A kind of LED chip, packaging and packaging method exempted from packaging plastic |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |