CN101067981A - Method for producing sheet type thermosensitive resistor - Google Patents
Method for producing sheet type thermosensitive resistor Download PDFInfo
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- CN101067981A CN101067981A CN 200710028649 CN200710028649A CN101067981A CN 101067981 A CN101067981 A CN 101067981A CN 200710028649 CN200710028649 CN 200710028649 CN 200710028649 A CN200710028649 A CN 200710028649A CN 101067981 A CN101067981 A CN 101067981A
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Abstract
This invention discloses a manufacturing method for slice thermal resistors, which prints a back electrode on the back of a marked slot side of an insulated ceramic chip, prints a face electrode on the slot side, then prints a thermal resisting layer and a protection layer with a thick film silk screen, which can reduce the processing time of slice thermal resistors effectively.
Description
Technical field
The present invention relates to a kind of manufacture method of electronic devices and components thermistor, refer in particular to a kind of manufacture method of chip type thermal resistor.
Background technology
At present, the design of existing multiple chip type thermal resistor is open with various forms. The agent structure of these chip type thermal resistors is (seeing accompanying drawing 1); a rectangle resistive element; be coated with upper end electrode and plating at its two ends; coat or stopping off not at resistive element, it comprises: resistive element 101, glass encapsulating layer 102, end electrode 205, target 206, external electrode 207. Such chip type thermal resistor manufacture method comprises the steps: A: make resistive element, material is the oxide of transient metal Mn, Co, Cu, Ni, Fe, first they is mixed by a certain percentage and grinds with ball mill, dry, then compressing tablet, sintering, and repeat number time. Forming thickness by curtain coating is the diaphragm of hundreds of micron, obtain the resistive element of respective resistance values, size through cutting again after, make final resistive element through steps such as various aging, sensitizations; B: at the surface of resistive element glassivation encapsulated layer except arranged on left and right sides; C: at the coated electrode of the arranged on left and right sides of resistive element, material is silver-colored Ag, forms end electrode; D: form termination target and external electrode with plating mode, target is nickel dam, and external electrode is the tin layer.
Above-mentioned thermistor resistances body layer is comprised of one deck transition metal oxide, be coated with silvery at two ends and do the electrode plating generation, but its resistor material is made complicated, and difficulty is high, nearly twenties of necessary manufacturing steps, cause processing procedure to shorten, add the operations such as cutting, aging, sensitization, complicated operation, a lot of, difficult control consuming time, so complicate fabrication process is consuming time tediously long. Above-mentioned processing procedure comprises a plurality of flow processs, and material therefor and cost of labor are all more, yields poorly, causes manufacturing cost higher. The casting technique manufacturing of above-mentioned thermal resistor, its product thickness is large; Because the thermal resistor of casting technique manufacturing is resistor type, the physical strength of resistor depends on the intensity of resistive element, so the ability of the anti-physical impact of thermal resistor that casting technique is made is relatively poor; The resistor volume that adds the casting technique manufacturing is large, also causes it long at thermal response time, and dissipation factor is large, and self-healing is relatively poor etc., so sensitive characteristic is relatively poor.
Chinese patent CN1367497 discloses a kind of thermistor, and it has at least a plurality of metal levels around a part of semiconductor body. Thermistor comprises the first thick membrane electrode layer, reactive metal layer, barrier metal layer and can promote optional one deck that adheres to electric contact. Describe in addition the method for making this thermistor, because it has a plurality of metal levels, had equally the manufacturing process complexity, the shortcoming that manufacturing cost is high.
Summary of the invention
The problem that the present invention need solve provides a kind of effective shortening processing procedure time, chip type thermal resistor manufacture method simple in structure, that sensitive characteristic good, resistance accuracy is high, physical strength is good.
Another problem that need solve of the present invention provides the chip type thermal resistor by this manufacture method gained.
Technical scheme of the present invention is: a kind of chip type thermal resistor manufacture method, its step is included as
(1) on the surface of an insulating ceramics substrate 200 by the spacing of setting paddle-tumble in length and breadth, form the paddle-tumble face with the grid that continues in all directions, set vertical paddle-tumble L2, laterally paddle-tumble L3 and paddle-tumble face are reverse side for the back side positive, the paddle-tumble face; (what must illustrate is that the overall permanence of same insulating ceramics substrate is consistent, which face line to be that paddle-tumble face herein and the setting of positive and negative are artificial definite identification coordinates, there is no other implication at random in)
(2) with the thick film method for printing screen at insulating ceramics substrate reverse side take each unit grid as benchmark printed conductor slurry, single-frame form the stratiform back electrode be attached to two ends, and the each other electricity isolation of this two electrode;
(3) with the thick film method for printing screen in the ceramic insulating substrate front take each unit grid as benchmark printed conductor slurry, single-frame form the stratiform face electrode be attached to two ends, and the each other electricity isolation of this two electrode;
(4) with thick film method for printing screen printing thermal resistance slurry in each unit grid of step (3), thermistor is starched the ceramic insulating substrate at capping unit grid middle part and is overlapped with the face electrode that is positioned at two ends, form the stratiform thermistor, namely form the connecting relation of face electrode, thermistor, face electrode;
(5) print protective paste on the surface of thermistor with the thick film method for printing screen; protective paste cover the stratiform thermistor and with the stratiform face electrode overlap joint at two ends; form protective layer, each grid two ends, unit all has stratiform face electrode to be bar shaped to expose outside protective layer.
Wherein, above-mentioned thick film method for printing screen is the thick film method for printing screen of using in the conventional resistor production, behind above-mentioned each electrode layer of thick film serigraphy, all needs drying, sintering through the resistance routine to form the stabilized electrodes rete; The insulating ceramics substrate has vertical paddle-tumble L2 and horizontal paddle-tumble L3, and the face electrode is the rectangular-shaped or continuous shape of convex-concave of trapezoidal shape, rectangular-shaped, semi arch half to be arranged and be printed on the insulating substrate front, and vertically paddle-tumble L2 overlaps with face electrode limit; After forming protective layer, utilize vertical paddle-tumble of insulating ceramics substrate itself, break product into two with one's hands into strips product, soak encapsulation method with existing conventional resistance again and be stained with elargol in the both ends of the surface of strip-shaped product, be that two length of longitudinal strip unit are on the side end face, exposed bar shaped stratiform face electrode is fully by silver-colored Ag matter end electrode parcel and covering, perhaps form nichrome film with conventional sputtering way in the both ends of the surface of strip-shaped product, exposed bar shaped stratiform face electrode is fully wrapped up and covers by the nichrome end electrode; The horizontal paddle-tumble of recycling insulating ceramics substrate itself becomes unit product with bar element jackknifing; Electro-plating method with routine plates at the both sides of unit product end electrode nickel plating Ni, nickel matter target wraps up fully and covers on the end electrode, then with conventional electro-plating method tin Sn matter is plated on the target, Sn matter outer electrode wraps up fully and covers on the target, forms unit thermistor product.
Further: the material of the back electrode in the method is silver-colored Ag; The face electrode is silver-colored Ag or silver-colored Ag, palladium Pd alloy; Thermal resistor layer is one or more among manganese Mn, cobalt Co, nickel, copper Cu, iron Fe, the silver-colored Ag, the thermal resistor layer thickness error of producing with this method≤± 1 μ m; Protective layer is a kind of material or other the conventional insulation class material in silicate glass, epoxy resin, the phenolic resins, and protective layer covers thermal resistor layer fully; Target is the nickel metal; Outer electrode is tin metal.
Among the present invention, conductor layer, thermal resistor layer, protective layer manufacturing process are simple, only relate to the thick film silk-screen printing technique, and processing ease effectively shortens processing procedure and reduced manufacturing cost.
Another solution of problem scheme that the present invention need solve: a kind of chip type thermal resistor of being made gained by said method, double-sided electrode is the rectangular-shaped or convex-concave coupling shape of trapezoidal shape, rectangular-shaped, semi arch half and is printed on respectively the positive two ends of unit insulating ceramics substrate, the termination overlaps with this face electrode limit, and the face electrode is silver-colored Ag or silver-colored Ag, palladium Pd alloy.
Thick film method for printing screen production chip type thermal resistor product size error is little, and product performance is good, and adopts AL2O
3Ceramic substrate is done carrier, its good mechanical property, and its thermal resistor layer is by AL2O
3Ceramic substrate (thick about 0.4mm) and protective layer (thick about 15 μ m) parcel is so that this product has corrosion resistance and good. In addition, adopt that the thickness of the chip type thermal resistor of thick film method for printing screen production only manufactures a product for traditional casting technique 1/4~1/2.
Description of drawings
Fig. 1 is that the master of typical heat sensitive resistor in the prior art looks the complete section schematic diagram, label declaration 101 resistive elements, 102 glass encapsulating layers, 205 end electrodes, 206 targets, 207 outer electrodes;
Fig. 2 is that the master of chip type thermal resistor one of the present invention looks the complete section structure chart, label declaration 200 insulating ceramics substrates, 201 back electrodes, 202 electrodes, 203 thermal resistor layer, 204 protective layers, 205 end electrodes, 206 targets, 207 outer electrodes;
Fig. 3 is that the master of chip type thermal resistor two of the present invention looks the complete section structure chart, label declaration 200 insulating ceramics substrates, 201 back electrodes, 202 electrodes, 203 thermal resistor layer, 204 protective layers, 205 end electrodes, 206 targets, 207 outer electrodes;
Fig. 4 is the outline drawing of insulating ceramics substrate 200 of the present invention, the vertical paddle-tumble of label declaration L2, the horizontal paddle-tumble of L3;
Fig. 5 is back electrode 201 planes of the present invention;
Fig. 6 is face electrode 202 planes of chip type thermal resistor 1 of the present invention;
Fig. 7 is face electrode 202 planes of chip type thermal resistor 2 of the present invention;
Fig. 8 is thermal resistor layer 203 planes of the present invention;
Fig. 9 is protective layer 204 planes of the present invention.
The specific embodiment
Below in conjunction with drawings and the specific embodiments production method and the resistance product of chip type thermal resistor of the present invention are done further contrast description.
Embodiment 1
Shown in accompanying drawing 2,4,5,6,8,9; the chip type thermal resistor that disclosed method derives; comprise insulating ceramics substrate 200, backplate 201, face electrode 202, thermal resistor layer 203, protective layer 204, termination electrode 205, target 206, external electrode 207, its implementation is as described below:
(1) on the surface of an insulating ceramics substrate 200 by the spacing of setting paddle-tumble in length and breadth, form the paddle-tumble face with the grid that continues in all directions, set vertical paddle-tumble L2, laterally paddle-tumble L3 and paddle-tumble face are reverse side for the back side positive, the paddle-tumble face; (what must illustrate is that the overall permanence of same insulating ceramics substrate is consistent, which face line to be that paddle-tumble face herein and the setting of positive and negative are artificial definite identification coordinates, there is no other implication at random in)
(2) with the thick film method for printing screen at the reverse side of insulating ceramics substrate 200 take each unit grid as benchmark printed conductor slurry, single-frame form the stratiform back electrode 201 that is attached to two ends, behind conventional drying, sintering, form the stabilized electrodes rete;
(3) with the thick film method for printing screen in ceramic insulating substrate 200 fronts take each unit grid as benchmark printed conductor slurry, single-frame form the stratiform face electrode 202 that is attached to two ends, face electrode 202 is trapezoidal shape and is printed on insulating substrate 200 fronts, vertically paddle-tumble L2 overlaps with this trapezoidal faces electrode limit, behind conventional drying, sintering, form the stabilized electrodes rete;
(4) with thick film method for printing screen printing thermal resistance slurry in each unit grid of step (3), thermistor is starched the ceramic insulating substrate 200 at capping unit grid middle part and is overlapped with the face electrode 202 that is positioned at two ends, form stratiform thermistor 203, after passing through again conventional drying, sintering, form and stablize thermal resistor layer 203;
(5) print protective paste on the surface of thermistor 203 with the thick film method for printing screen, protective paste cover stratiform thermistor 203 and with stratiform face electrode 202 overlap joints at two ends, form protective layer 204, each grid two ends, unit all has stratiform face electrode 202 to be bar shaped to expose outside protective layer, through conventional drying, sintering or after solidifying, form stabilized protection course 204;
(6) utilize vertical paddle-tumble L2 of insulating ceramics substrate 200 itself, break the product of step (5) into two with one's hands into strips product;
(7) utilize routine to soak encapsulation method and be stained with elargol in the both ends of the surface of step (6) product, form end electrode 205 or form nichrome film with sputtering way in the both ends of the surface of step (6); Namely the two long bar shaped stratiform face electrodes exposed to the side end face in the longitudinal strip unit are fully wrapped up or are wrapped up by nichrome film by silver-colored Ag, form end electrode.
(8) utilize the horizontal paddle-tumble L3 of insulating ceramics substrate 200 itself, the strip-shaped product jackknifing of step (7) is become unit product;
(9) plate nickel matter target with conventional electro-plating method at the two ends of step (8) product, form the target 206 that covers the back of the body, front electrode, this target 206 wraps up and covers on the end electrode 205 fully, electro-plating method with routine is plated in formation Sn matter outer electrode 207 on the target 206 with tin Sn matter, this outer electrode wraps up fully and covers on the target 206, forms unit thermistor product;
060310K Ω (03-10K) chip type thermal resistor by the said method manufacturing, double-sided electrode 202 is trapezoidal shape and is printed on respectively insulating ceramics substrate 200 positive two ends, the termination overlaps with this trapezoidal faces electrode limit, appearance and size such as the table 1 of contrast test product, Character Comparison is as shown in table 2, and sample number is 200.
Table 1, product design contrast
Product | Length (mm) | Width W (mm) | Thickness (mm) | Electrode length (mm) |
The thick film method for printing screen is produced chip type thermal resistor | 1.60±0.15 | 0.80±0.15 | 0.40±0.10 | 0.30±0.20 |
The tradition casting method is produced chip type thermal resistor | 1.60±0.20 | 0.80±0.20 | 0.70±0.20 | 0.3±0.20 |
Table 2, product performance contrast
Product | The thick film method for printing screen is produced chip type thermal resistor | The tradition casting method is produced chip type thermal resistor | ||||||
Contrast experiment's project | Product type | Maximum | Minimum of a value | Mean value | Product type | Maximum | Minimum of a value | Mean value |
Material constant B value (25 ℃/50 ℃) | 03-10K | 3540 | 3470 | 3490 | 03-10K | 3583 | 3323 | 3481 |
Thermal time constant S (25 ℃/85 ℃) | 03-10K | <1.0 | 03-10K | >3 |
Dissipation factor (mw/ ℃) | 03-10K | <1.0mW/℃ | 03-10K | >1.0mW/℃ |
Termination intensity | 03-10K | >15N | 03-10K | 8N |
Bending strength | 03-10K | 3mm | 03-10K | 1mm |
Solvent resistance | 03-10K | ΔR<1%,ΔB<1% | 03-10K | Sag of protecting coating can't be finished experiment. |
125 ℃ durable | 03-10K | ΔR<0.5%,ΔB< 0.5% | 03-10K | ΔR<1%,ΔB<1% |
Found out that by table 1, table 2 thick film method for printing screen production chip type thermal resistor product size error is little, product performance is good, and the chip type thermal resistor of thick film serigraphy adopts AL2O
3Ceramic substrate is done carrier, its good mechanical property, and its thermal resistor layer is by AL2O
3Ceramic substrate (about 1mm) and cover glass (about 15 μ) parcel is so that this product has remarkable decay resistance.
Embodiment 2
Shown in accompanying drawing 3,4,5,7,8,9; another chip type thermal resistor that disclosed method derives comprises insulating ceramics substrate 200, backplate 201, face electrode 202, thermal resistor layer 203, protective layer 204, termination electrode 204, target 206, external electrode 207, and its implementation is as follows:
(1) on the surface of an insulating ceramics substrate 200 by the spacing of setting paddle-tumble in length and breadth, form the paddle-tumble face with the grid that continues in all directions, set vertical paddle-tumble L2, horizontal paddle-tumble L3;
(2) with the thick film method for printing screen at the reverse side of insulating ceramics substrate 200 take each unit grid as benchmark printed conductor slurry, single-frame form the stratiform back electrode 201 that is attached to two ends, behind conventional drying, sintering, form the stabilized electrodes rete;
(3) with the thick film method for printing screen in ceramic insulating substrate 200 fronts take each unit grid as benchmark printed conductor slurry, single-frame form the stratiform face electrode 202 that is attached to two ends, face electrode 202 is the arrangement of convex-concave shape and is printed on unit ceramic insulating substrate 200 fronts, vertically paddle-tumble L2 overlaps with male and female face electrode limit, behind conventional drying, sintering, form the stabilized electrodes rete;
(4) with thick film method for printing screen printing thermal resistance slurry in each unit grid of step (3), thermistor is starched the ceramic insulating substrate 200 at capping unit grid middle part and is overlapped with the face electrode 202 that is positioned at two ends, form stratiform thermistor 203, after passing through again conventional drying, sintering, form and stablize thermal resistor layer 203;
(5) print protective paste on the surface of thermistor 203 with the thick film method for printing screen, protective paste cover stratiform thermistor 203 and with stratiform face electrode 202 overlap joints at two ends, form protective layer 204, it is exposed outside that each grid two ends, unit all has stratiform face electrode 202 to be bar shaped, through conventional drying, sintering or after solidifying, form stabilized protection course 204;
(6) utilize vertical paddle-tumble L2 of insulating ceramics substrate 200 itself, break the product of step (5) into two with one's hands into strips product;
(7) utilize routine to soak encapsulation method and be stained with elargol in the both ends of the surface of step (6) product, form end electrode 205 or form nichrome film with sputtering way in the both ends of the surface of step (6); Namely the two long bar shaped stratiform face electrodes exposed to the side end face in the longitudinal strip unit are fully wrapped up or are wrapped up by nichrome film by silver-colored Ag, form end electrode.
(8) utilize the horizontal paddle-tumble L3 of insulating ceramics substrate 200 itself, the strip-shaped product jackknifing of step (7) is become unit product;
(9) plate nickel matter target with conventional electro-plating method at the two ends of step (8) product, form the target 206 that covers the back of the body, front electrode, this target 206 wraps up and covers on the end electrode 205 fully, electro-plating method with routine is plated in formation Sn matter outer electrode 207 on the target 206 with tin Sn matter, this outer electrode wraps up fully and covers on the target 206, forms unit thermistor product;
060347K Ω (03-47K) chip type thermal resistor by the said method manufacturing, double-sided electrode 202 is convex-concave coupling arrangement shape and is printed on ceramic insulating substrate 200 positive two ends, the termination overlaps with convex-concave joint face electrode limit, appearance and size such as the table 3 of contrast test product, Character Comparison is as shown in table 4, and sample number is 200.
Table 3, product design contrast
Product | Length (mm) | Width W (mm) | Thickness (mm) | Electrode length (mm) |
The thick film method for printing screen is produced chip type thermal resistor | 1.60±0.15 | 0.80±0.15 | 0.40±0.10 | 0.30±0.20 |
The tradition casting method is produced chip type thermal resistor | 1.60±0.20 | 0.80±0.20 | 0.70±0.20 | 0.3±0.20 |
Table 4, product performance contrast
Product | The thick film method for printing screen is produced chip type thermal resistor | The tradition casting method is produced chip type thermal resistor |
Contrast experiment's project | Product type | Maximum | Minimum of a value | Mean value | Product type | Maximum | Minimum of a value | Mean value |
Material constant B value (25 ℃/50 ℃) | 03-47K | 3540 | 3470 | 3490 | 03-47K | 3583 | 3323 | 3481 |
Thermal time constant (s) (25 ℃/85 ℃) | 03-47K | <1.0 | 03-47K | >3 | ||||
Dissipation factor (mw/ ℃) | 03-47K | <1.0mW/℃ | 03-47K | >1.0mW/℃ | ||||
Termination intensity | 03-47K | >15N | 03-47K | 8N | ||||
Bending strength | 03-47K | 3mm | 03-47K | 1mm | ||||
Solvent resistance | 03-47K | ΔR<1%,ΔB<1% | 03-47K | Sag of protecting coating can't be finished experiment. | ||||
125 ℃ durable | 03-47K | ΔR<0.5%,ΔB< 0.5% | 03-47K | ΔR<1%,ΔB<1% |
Found out that by table 1, table 2 thick film method for printing screen production chip type thermal resistor product size error is little, product performance is good, and the chip type thermal resistor of thick film serigraphy adopts AL2O
3Ceramic substrate is done carrier, its good mechanical property, and its thermal resistor layer is by AL2O
3Ceramic substrate (thick about 0.4mm) and cover glass (about 15 μ m) parcel is so that this product has remarkable decay resistance.
In sum, in the present invention, back electrode 201, face electrode 202, thermal resistor layer 203,204 of protective layers relate to the thick film silk-screen printing technique, and manufacturing process is simple, effectively shorten processing procedure and reduced manufacturing cost, and product performance is good.
Claims (8)
1, a kind of manufacture method of chip type thermal resistor, its step is included as
(1) on the surface of an insulating ceramics substrate (200) by the spacing of setting paddle-tumble in length and breadth, form the paddle-tumble face with the grid that continues in all directions, set vertical paddle-tumble L2, laterally paddle-tumble L3 and paddle-tumble face are reverse side for the back side positive, the paddle-tumble face;
(2) with the thick film method for printing screen at the reverse side of insulating ceramics substrate (200) take each unit grid as benchmark printed conductor slurry, single-frame form the stratiform back electrode (201) that is attached to two ends;
(3) positive take each unit grid as benchmark printed conductor slurry at ceramic insulating substrate (200) with the thick film method for printing screen, single-frame form the stratiform face electrode (202) that is attached to two ends;
(4) with thick film method for printing screen printing thermal resistance slurry in each unit grid of step (3), thermistor is starched the ceramic insulating substrate (200) at capping unit grid middle part and is overlapped with the face electrode (202) that is positioned at two ends, forms stratiform thermistor (203);
(5) print protective paste on the surface of thermistor (203) with the thick film method for printing screen; protective paste cover stratiform thermistor (203) and with stratiform face electrode (202) overlap joint at two ends; form protective layer (204), it is exposed outside that each grid two ends, unit all has stratiform face electrode (202) to be bar shaped.
2, chip type thermal resistor manufacture method as claimed in claim 1, it is characterized in that face electrode (202) is the rectangular-shaped or continuous shape of convex-concave of trapezoidal shape, rectangular-shaped, semi arch half and arranges and be printed on insulating substrate (200) front, vertically paddle-tumble L2 overlaps with face electrode limit.
3, chip type thermal resistor manufacture method as claimed in claim 2, the material that it is characterized in that back electrode (201) is silver-colored Ag, the material of face electrode (202) is silver-colored Ag or silver-colored Ag, palladium Pd alloy.
4, chip type thermal resistor manufacture method as claimed in claim 3 is characterized in that thermal resistor layer (203) is one or more the alloy composite among manganese Mn, cobalt Co, nickel, copper Cu, iron Fe, the silver-colored Ag.
5, chip type thermal resistor manufacture method as claimed in claim 4 is characterized in that protective layer (204) is a kind of in silicate glass, epoxy resin, the phenolic resins.
6, chip type thermal resistor manufacture method as claimed in claim 5, it is characterized in that utilizing vertical paddle-tumble L2 of insulating ceramics substrate (200) itself, break into insulating ceramics substrate (200) into two with one's hands the longitudinal strip unit, then two of the longitudinal strip unit long bar shaped stratiform face electrodes (202) exposed on the side end face are fully by silver-colored Ag matter or nichrome end electrode (205) parcel with cover.
7, chip type thermal resistor manufacture method as claimed in claim 6, it is characterized in that utilizing the horizontal paddle-tumble L3 on the bar element of insulating ceramics substrate (200), bar element jackknifing is become independently unit grid, the unit grid is attached with the both sides of silver-colored Ag matter end electrode (205) and is wrapped up fully and cover by nickel matter target (206), and then tin Sn matter outer electrode (207) is wrapped up fully and covers on the target (206).
8, a kind of chip type thermal resistor of being made by each method in the claim 1 to 7, it is characterized in that face electrode (202) is the rectangular-shaped or convex-concave coupling shape of trapezoidal shape, rectangular-shaped, semi arch half and is printed on respectively the positive two ends of unit insulating ceramics substrate (200), the termination overlaps with this face electrode limit.
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