CN101656276A - Method for preparing crystalline silicon solar battery electrode by utilizing overprinting way - Google Patents
Method for preparing crystalline silicon solar battery electrode by utilizing overprinting way Download PDFInfo
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- CN101656276A CN101656276A CN200910034983A CN200910034983A CN101656276A CN 101656276 A CN101656276 A CN 101656276A CN 200910034983 A CN200910034983 A CN 200910034983A CN 200910034983 A CN200910034983 A CN 200910034983A CN 101656276 A CN101656276 A CN 101656276A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing a crystalline silicon solar battery electrode by utilizing an overprinting way. The processing steps are as follows: A, preparing silicon slice for manufacturing electrodes, carrying out first electrode printing according to printing graphic aiming at contact design, and then drying and sintering; B, carrying out second electrode printing according tothe printing image of the first electrode printing or the printing image designed aiming at battery conductive resistance, overprinting on the first print graphic, and then drying and sintering. In the method of the invention, as subsequent overprinting can adopt sizing agents with different material ingredients, electrical conduction is improved, the method after whole sintering not only meets metal contact but also obtains good electrical conduction, thereby being capable of effectively improving filling factor and finally impacting on battery performance. Subsequent overprinting is attached on the surface of the first printing electrode to form a conductive structure. Overprinting process can effectively avoid frequent disconnection and incomplete printing occasions in existing printing.
Description
Technical field
The present invention relates to a kind ofly on crystal silicon solar cell sheet, use identical or different pattern and identical or different slurry carries out twice or repeatedly printing, prepare the method for crystalline silicon solar battery electrode.
Background technology
The positive printed silver of solar cell basic technology is starched now, back up silver aluminium paste and aluminium paste, fill factor, curve factor solves better, but has a lot of corresponding problem simultaneously, a back of the body whole printing aluminium paste can cause too much that the interface is compound, thereby causes the battery performance loss.
For general solar cell, adopt general mode of printing to obtain the electrode contact, to the figure of electrode printing, grid line width and certain requirement is highly all arranged is simultaneously because the picture broken string often also can appear in process technology limit, print not congruent phenomenon, influenced the final performance of battery greatly.
And for high performance solar batteries, technology has bigger change, for specific contact portion, and the phenomenon that often has contact and conductive resistance to be difficult to take into account, contact and conduction electricity are led relatively poor, and the fill factor, curve factor loss is bigger.For example, compound at the high-efficiency battery back side in order to reduce the back of the body, often can not adopt the mode of whole printing, adopt and partly form contact at local, other parts are then done corresponding passivation.And this moment, contact portion has whole contact to change to the local contact, sizable ohmic loss and loose contact will occur.
Contact forms electricity and leads to general local, and generally be divided into two parts: first is a metal grid lines, is used for collected current, and this part lines is thin and high, avoids shading, and it is good to satisfy conductivity again simultaneously; Second portion is bus (busbar), is used for the welding of battery, and this part generally has the broad lines, and conductivity and weldability are good.Metal-semiconductor is contacted many, can increase compound.Can influence conductive resistance and metal is very few.
Summary of the invention
Technical problem to be solved by this invention just is to overcome the defective that prior art exists, and a kind of method of utilizing overprinting way to prepare crystalline silicon solar battery electrode is provided, by twice or repeatedly printing solve the problem that electrode contact and conduction electricity are led.
May lose bigger in the conductive resistance aspect because first impression slurry is primarily aimed at Metal Contact, follow-up chromatography then can be adopted the slurry of different materials composition, improving the conduction electricity leads, the Metal Contact that had not only satisfied after integral sintered but also obtained the favorable conductive electricity and lead, thus can improve fill factor, curve factor effectively and finally influence battery performance.Follow-up chromatography also can be adopted and conduct electricity very well but the bad slurry of penetrability, makes its membrane structure that can not penetrate the battery sheet, and forms the favorable conductive structure attached to the surface of first impression electrode.
Chromatography technology also might avoid existing printing broken string and the infull situation of printing often to occur to a certain extent.When chromatography technology is used in the high-efficiency battery back side, also can ignore the loss that light absorption is brought because of the chromatography broadening fully.
The present invention utilizes overprinting way to prepare the method for crystalline silicon solar battery electrode, and its processing step is as follows:
1, will prepare the silicon chip of preparation electrode, according to doing electrode printing for the first time, oven dry or sintering then at the printed pattern (pattern) of contact design;
2, do electrode printing for the second time according to the printed pattern of the electrode printing first time or at the printed pattern (pattern) of battery conductive resistive arrangement again, cover is imprinted on the first impression figure, dries then or sintering.
The described electrode printing first time and electrode printing for the second time can be adopted same slurry or different slurry.Electrode printing for the first time can be selected the good slurries of penetrability such as aluminium paste, silver slurry, and electrode printing for the second time can be selected the slurry (starching as silver) of good conductivity or good conductivity for use but the bad slurry of penetrability; The penetrability of described slurry is meant: refer to here to penetrate the slurry of oxide layer or silicon nitride layer or the slurry that the two can both penetrate (actual here with slurry in composition much relations are arranged, what penetrate these thin layers in general is glass ingredient, but glass ingredient too much can cause electricity to lead difference or Welding Problems again.)
Having needs to repeat that second step is carried out for the third time even more times electrode printing (chromatography).
The inventive method because follow-up chromatography then can be adopted the slurry of different materials composition, is improved the conduction electricity and is led, the Metal Contact that had not only satisfied after integral sintered but also obtained the favorable conductive electricity and lead, thus can improve fill factor, curve factor effectively and finally influence battery performance.Follow-up chromatography forms the favorable conductive structure attached to the surface of first impression electrode.Chromatography technology can effectively avoid existing printing broken string and the infull situation of printing often to occur.
Description of drawings
Fig. 1 is that the present invention adopts formed battery of complete symmetrical chromatography and electrode side section structure schematic diagram;
Wherein: 1 is silicon chip; 2 is the electrode contact portion that electrode printing for the first time obtains; 3 is the electrode of electrode printing for the second time.
Fig. 2 is that the present invention adopts non-formed battery of complete symmetrical chromatography and electrode side section structure schematic diagram; Wherein: 1 is silicon chip; 2 is the electrode contact portion that electrode printing for the first time obtains; 3 is the electrode of electrode printing for the second time.
Fig. 3 is that the present invention adopts formed battery of complete asymmetric chromatography and electrode side section structure schematic diagram; Wherein: 1 is silicon chip; 2 is the electrode contact portion that electrode printing for the first time obtains; 3 is the electrode of electrode printing for the second time.
Fig. 4 is one of printed patterns of complete asymmetric chromatography, and a is the electrode printed patterns first time, and b is the electrode printed patterns second time; Wherein: 4 is grid line, the 5th, and busbar.
Fig. 5 be complete asymmetric chromatography printed patterns two, a is an electrode printed patterns for the first time, b is an electrode printed patterns for the second time;
Fig. 6 be complete asymmetric chromatography printed patterns three, a is an electrode printed patterns for the first time, b is an electrode printed patterns for the second time;
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
1, the semi-finished product silicon chip of preparing the preparation electrode is put on the print station, selected for use aluminium paste according to doing electrode printing for the first time at the printed pattern of contact design.Again silicon chip is dried or sintering.
2, more above-mentioned silicon chip is selected for use the silver slurry to be imprinted on the electrode printed pattern first time according to doing electrode printing for the second time with the printed pattern of step 1, covering fully and overlap.Silicon chip is dried or sintering.
The side section structure of silicon chip after electrode is completed for printing and electrode as shown in Figure 1.
1, the semi-finished product silicon chip of preparing the preparation electrode is put on the print station, selected for use the silver slurry according to doing electrode printing for the first time at the printed pattern of contact design.Silicon chip is dried or sintering.
2, more above-mentioned silicon chip is selected for use silver slurry according to the printed pattern identical with step 1 but the figure scope slightly big (perhaps slightly little) do electrode printing for the second time, cover and cover is imprinted on for the first time on the electrode printed pattern.Silicon chip is dried or sintering.
The side section structure of silicon chip after electrode is completed for printing and electrode as shown in Figure 2.
1, the semi-finished product silicon chip of preparing the preparation electrode is put on the print station, according to doing electrode printing for the first time at the printed pattern of contact design.Silicon chip is dried or sintering.
2, more above-mentioned silicon chip is imprinted on the electrode printed pattern first time according to doing electrode printing for the second time at the printed pattern of battery conductive resistive arrangement, overlapping, the electrode contact portion that the first time, the electrode printing obtained is coupled together, form complete conducting structure.Silicon chip is dried or sintering.
The side section structure of silicon chip after electrode is completed for printing and electrode as shown in Figure 3.
Can be as shown in Figure 4,
1, the electrode printing first time that can select the good slurries of penetrability such as aluminium paste, silver slurry to carry out, intensive thin grid line net bar pattern (no busbar).The battery sheet is dried or sintering.
2, with the slurry of good conductivity, on first impression basis, carry out electrode printing second time as silver slurry etc., print with the intensive thin aperture plate bar pattern of band busbar, and net bar pattern is overlapped with first impression pattern.The battery sheet is dried or sintering.
Can also be as shown in Figure 5,
1, selects the good slurries of penetrability such as aluminium paste, silver slurry that battery is carried out the first impression, print with dot matrix or linear array pattern.The battery sheet is dried or sintering.
2, with the slurry of good conductivity, on first impression basis, carry out the second impression as silver slurry etc., with the intensive thin aperture plate bar pattern printing of band busbar, dot matrix, linear array are covered and connection with thin aperture plate bar.The battery sheet is dried or sintering.
Also can be as shown in Figure 6,
1, with good slurries of penetrability such as aluminium paste, silver slurries battery is carried out the electrode printing first time earlier, print with the refined net structure plan.Battery sheet (silicon chip) is dried or sintering.
2, use the slurry of good conductivity, starch as silver, contain copper slurry etc. and on the basis of the first impression, carry out the electrode printing second time, intensive thin aperture plate bar pattern (also can with thin aperture plate grid pattern) with band busbar, the figure of the first impression is carried out all or part of covering and connection, the conductive structure that has formed.The battery sheet is dried or sintering.
Perhaps,
1, carries out the electrode printing first time with good slurries of penetrability such as aluminium paste, silver slurries earlier, print with dot matrix, linear array, lines or refined net structure plan.The battery sheet is dried or sintering.
2,, lead to form the favorable conductive electricity with good conductivity but the bad slurry of penetrability (as the special silver slurry of a small amount of glass ingredient) carries out whole covering on the basis of the first impression.The battery sheet is dried or sintering.
Perhaps:
1, carries out the electrode printing first time with good slurries of penetrability such as aluminium paste, silver slurries earlier, print with dot matrix, linear array, lines, refined net structure or other design configuration pattern.The battery sheet is dried or sintering.
2,, be used for improving and conduct electricity electricity and lead with good conductivity but bad slurry, the coating of penetrability print the figure of the structure of particular design on the basis of the first impression.Its busbar is shaped as the figure of particular design, as dot structure, and frame structure etc.The battery sheet is dried or sintering.
Claims (3)
1, a kind of method of utilizing overprinting way to prepare crystalline silicon solar battery electrode, its processing step is as follows:
A, will prepare the silicon chip of preparation electrode, according to do electrode printing for the first time, oven dry or sintering then at the printed pattern of contact design;
B, do electrode printing for the second time according to the printed pattern of the electrode printing first time or at the printed pattern of battery conductive resistive arrangement again, cover is imprinted on the first impression figure, dries then or sintering.
2, the method for utilizing overprinting way to prepare crystalline silicon solar battery electrode according to claim 1 is characterized in that: the described electrode printing first time and electrode printing for the second time, can adopt same slurry or different slurry.
3, according to claim 1 or the described method of utilizing overprinting way to prepare crystalline silicon solar battery electrode, it is characterized in that: can repeat that second step is carried out for the third time or more times electrode printing.
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| CN200910034983A CN101656276A (en) | 2009-09-17 | 2009-09-17 | Method for preparing crystalline silicon solar battery electrode by utilizing overprinting way |
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Cited By (17)
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| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| CN102347392A (en) * | 2010-08-02 | 2012-02-08 | 新日光能源科技股份有限公司 | Solar battery and electrode structure and manufacturing method thereof |
| CN102501656A (en) * | 2011-10-26 | 2012-06-20 | 西安交通大学 | Secondary printing method of solar battery electrode |
| CN102810576A (en) * | 2012-08-09 | 2012-12-05 | 晶澳（扬州）太阳能科技有限公司 | Electrode grid line structure for dual-printed solar cell |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN103151094A (en) * | 2011-10-25 | 2013-06-12 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Electroconductive paste composition containing metal nanoparticles |
| CN103171259A (en) * | 2011-12-23 | 2013-06-26 | 昆山允升吉光电科技有限公司 | Solar cell electrode printing halftone and printing method thereof |
| CN104247049A (en) * | 2012-04-18 | 2014-12-24 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Methods of printing solar cell contacts |
| EP2413370A3 (en) * | 2010-07-28 | 2017-12-20 | Neo Solar Power Corp. | Solar cell and electrode structure therefor |
| CN108054222A (en) * | 2017-12-22 | 2018-05-18 | 南通苏民新能源科技有限公司 | A kind of method for making its electrode of HIT solar cells |
| CN109616530A (en) * | 2018-11-14 | 2019-04-12 | 晶澳（扬州）太阳能科技有限公司 | A kind of technique for the electrode forming solar battery |
| CN110098265A (en) * | 2019-04-29 | 2019-08-06 | 南通天盛新能源股份有限公司 | A kind of N-type front electrode of solar battery method for metallising |
| WO2019173052A1 (en) * | 2018-03-09 | 2019-09-12 | Heraeus Precious Metals North America Conshohocken Llc | Confined contact area on a silicon wafer |
| CN112563348A (en) * | 2021-01-07 | 2021-03-26 | 南通天盛新能源股份有限公司 | Metallization method for passivation contact of tunneling oxide layer on back electrode of solar cell |
| CN114093959A (en) * | 2021-11-23 | 2022-02-25 | 南京苏煜新能源科技有限公司 | Solar cell and photovoltaic module |
| CN114311958A (en) * | 2021-12-29 | 2022-04-12 | 无锡宏瑞机器制造有限公司 | Lithium cell electrode production is with high-speed two-sided intaglio printing coating machine |
| DE102022118063A1 (en) | 2022-07-19 | 2024-01-25 | "International Solar Energy Research Center Konstanz", ISC Konstanz e.V. | Method for producing semiconductor-metal contacts of a solar cell and solar cell |
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2009
- 2009-09-17 CN CN200910034983A patent/CN101656276A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2413370A3 (en) * | 2010-07-28 | 2017-12-20 | Neo Solar Power Corp. | Solar cell and electrode structure therefor |
| CN102347392A (en) * | 2010-08-02 | 2012-02-08 | 新日光能源科技股份有限公司 | Solar battery and electrode structure and manufacturing method thereof |
| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| CN103151094A (en) * | 2011-10-25 | 2013-06-12 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Electroconductive paste composition containing metal nanoparticles |
| CN102501656A (en) * | 2011-10-26 | 2012-06-20 | 西安交通大学 | Secondary printing method of solar battery electrode |
| CN103171259B (en) * | 2011-12-23 | 2015-09-23 | 昆山允升吉光电科技有限公司 | Electrode of solar battery Printing screen and printing process thereof |
| CN103171259A (en) * | 2011-12-23 | 2013-06-26 | 昆山允升吉光电科技有限公司 | Solar cell electrode printing halftone and printing method thereof |
| CN104247049B (en) * | 2012-04-18 | 2018-03-16 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | The method of printing solar cell contact |
| CN104247049A (en) * | 2012-04-18 | 2014-12-24 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | Methods of printing solar cell contacts |
| CN102810576B (en) * | 2012-08-09 | 2015-11-18 | 晶澳（扬州）太阳能科技有限公司 | A kind of electrode grid line structure of dual printing solar cell |
| CN102810576A (en) * | 2012-08-09 | 2012-12-05 | 晶澳（扬州）太阳能科技有限公司 | Electrode grid line structure for dual-printed solar cell |
| CN102916087B (en) * | 2012-11-09 | 2015-06-17 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN108054222A (en) * | 2017-12-22 | 2018-05-18 | 南通苏民新能源科技有限公司 | A kind of method for making its electrode of HIT solar cells |
| WO2019173052A1 (en) * | 2018-03-09 | 2019-09-12 | Heraeus Precious Metals North America Conshohocken Llc | Confined contact area on a silicon wafer |
| CN109616530A (en) * | 2018-11-14 | 2019-04-12 | 晶澳（扬州）太阳能科技有限公司 | A kind of technique for the electrode forming solar battery |
| CN112018195A (en) * | 2018-11-14 | 2020-12-01 | 晶澳（扬州）太阳能科技有限公司 | Process for forming electrode of solar cell |
| CN112018194A (en) * | 2018-11-14 | 2020-12-01 | 晶澳（扬州）太阳能科技有限公司 | Process for forming electrode of solar cell |
| CN112018194B (en) * | 2018-11-14 | 2023-10-27 | 东台晶澳太阳能科技有限公司 | Process for forming electrode of solar cell |
| CN112018195B (en) * | 2018-11-14 | 2023-10-27 | 东台晶澳太阳能科技有限公司 | Process for forming electrode of solar cell |
| CN110098265A (en) * | 2019-04-29 | 2019-08-06 | 南通天盛新能源股份有限公司 | A kind of N-type front electrode of solar battery method for metallising |
| CN112563348A (en) * | 2021-01-07 | 2021-03-26 | 南通天盛新能源股份有限公司 | Metallization method for passivation contact of tunneling oxide layer on back electrode of solar cell |
| CN112563348B (en) * | 2021-01-07 | 2024-03-08 | 南通天盛新能源股份有限公司 | Metallization method for passivation contact solar cell back electrode of tunneling oxide layer |
| CN114093959A (en) * | 2021-11-23 | 2022-02-25 | 南京苏煜新能源科技有限公司 | Solar cell and photovoltaic module |
| CN114311958A (en) * | 2021-12-29 | 2022-04-12 | 无锡宏瑞机器制造有限公司 | Lithium cell electrode production is with high-speed two-sided intaglio printing coating machine |
| DE102022118063A1 (en) | 2022-07-19 | 2024-01-25 | "International Solar Energy Research Center Konstanz", ISC Konstanz e.V. | Method for producing semiconductor-metal contacts of a solar cell and solar cell |
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Open date: 20100224 |