CN104795192A - Wafer resistor - Google Patents
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- CN104795192A CN104795192A CN201410020008.4A CN201410020008A CN104795192A CN 104795192 A CN104795192 A CN 104795192A CN 201410020008 A CN201410020008 A CN 201410020008A CN 104795192 A CN104795192 A CN 104795192A
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Abstract
The present invention relates to a wafer resistor, which comprises a substrate, two first electrodes, two second electrodes, a resistance layer, at least a protection layer and at least a plating layer, wherein the protection layer is arranged on the resistance layer and covers parts of the two first electrodes, the protection layer comprises at least two covering side surfaces and at least a covering plane, and the plating layer covers the two covering side surfaces, the covering plane, parts of the two first electrodes, and the two second electrodes. According to the present invention, the wafer resistor utilizes the two covering side surfaces and the covering plane to extend the distance between the two first electrodes and the outside, such that airborne sulfur, sulfides and sulfur-containing compounds difficultly enter so as not to react with the two first electrodes, such that the wafer resistor of the present invention can resist to corrosion of sulfur, sulfides and sulfur-containing compounds or halogen and other harmful substances on the electrode.
Description
Technical field
The present invention relates to a kind of wafer resistor, particularly a kind of sulfuration resistant wafer resistor.
Background technology
The thick film of current surface adhering element, thin film wafers resistor, described wafer resistor generally includes resistive element (Resistor), conductor (Conductor), glass (Glass), insulating protective layer (Overcoat) and plating termination electrode layer (Electo-plated terminals).Generally speaking, usually use the material of argentiferous (Silver-containing) to be used as conductor material, to be electrically connected with resistance material and as the first electrode, the second electrode or side electrode (Side Conductor).
Summary of the invention
The object of the present invention is to provide a kind of wafer resistor.
In one embodiment, wafer resistor of the present invention comprises: a base material, two the first electrodes, two the second electrodes, a resistive layer, at least one protective layer and at least one coating.This base material has a first surface and a second surface, and this second surface is relative with this first surface.Two the first electrodes are arranged at this first surface.Two the second electrodes are arranged at this second surface.This resistive layer is arranged at this first surface, and two, cover part the first electrode.This at least one protective layer is arranged on this resistive layer, and two, cover part the first electrode, this at least one protective layer comprises at least two and covers side and at least one overlay planes.Described in this at least one coating covers, at least two cover side, at least one overlay planes, part two the first electrodes and two the second electrodes.
Preferably; described at least one protective layer comprises one first protective layer and one second protective layer; this first protective layer is arranged on this resistive layer, and this second protective layer is arranged on this first protective layer, and this second protective layer comprises at least two and covers side and at least one overlay planes.
Preferably, described second protective layer also comprises one and appears plane, this thickness appeared bottom plane to of this second protective layer be greater than this at least one overlay planes to this second protective layer this bottom thickness.
Preferably; described at least one protective layer comprises one first protective layer and one second protective layer; this first protective layer is arranged on this resistive layer; this first protective layer comprises at least one covering side and at least one overlay planes; this second protective layer is arranged on this first protective layer, and this second protective layer comprises at least one covering side.
Preferably, described second protective layer also comprises one and appears plane, this at least one overlay planes that this thickness appeared bottom plane to of this first protective layer is greater than this first protective layer to this first protective layer this bottom thickness.
Preferably, described at least one coating comprises one first coating, one second coating and one the 3rd coating, described in this first coating covers, at least two cover side, at least one overlay planes, part two the first electrodes and two the second electrodes, this second coating covers this first coating, and the 3rd coating covers this second coating.
The present invention also provides another kind of wafer resistor.
In one embodiment, wafer resistor of the present invention comprises: a base material, two the first electrodes, two the second electrodes, a resistive layer, at least one protective layer and at least one coating.This base material has a first surface and a second surface, and this second surface is relative with this first surface.Two the first electrodes are arranged at this first surface.Two the second electrodes are arranged at this second surface.This resistive layer is arranged at this first surface, and two, cover part the first electrode.This at least one protective layer is arranged on this resistive layer, and fully other part two the first electrodes on overlay planes, this at least one protective layer comprises at least one covering side.This at least one coating covers this at least one covering side, the side of two the first electrodes and two the second electrodes.
Preferably; described at least one protective layer comprises one first protective layer and one second protective layer; this first protective layer is arranged on this resistive layer; this second protective layer is arranged on this first protective layer; and fully other part two the first electrodes on overlay planes, this second protective layer comprises at least one covering side and and appears plane.
Preferably, described at least one coating comprises one first coating, one second coating and one the 3rd coating, this the first coating cover part this appear plane, this at least one covering side, the side of two the first electrodes and the side of two the second electrodes and part two the second electrodes, this second coating covers this first coating, and the 3rd coating covers this second coating.
Preferably; described at least one protective layer comprises one first protective layer, one second protective layer and one the 3rd protective layer; this first protective layer is arranged on this resistive layer; this second protective layer is arranged on this first protective layer; and fully other part two the first electrodes on overlay planes; this second protective layer comprises at least one covering side and at least one overlay planes, and the 3rd protective layer is arranged on this second protective layer, and the 3rd protective layer comprises at least one covering side.
Preferably; described at least one coating comprises one first coating, one second coating and one the 3rd coating; this first coating covers this at least one covering side of the 3rd protective layer, this at least one overlay planes of this second protective layer and this at least one covering side, the side of two the first electrodes and two the second electrodes; this second coating covers this first coating, and the 3rd coating covers this second coating.
Preferably, described 3rd protective layer also comprises one and appears plane, this at least one overlay planes that this thickness appeared bottom plane to of this second protective layer is greater than this second protective layer to this second protective layer this bottom thickness.
Beneficial effect of the present invention is: wafer resistor of the present invention utilizes two to cover side and this overlay planes, to extend two the first electrodes and extraneous distance, sulphur, sulfide and the sulfur-containing compound propagated in air is made to be difficult to enter and two the first electrode reactions.Therefore wafer resistor of the present invention can resist the corrosion for electrode of sulphur, sulfide and the harmful substance such as sulfur-containing compound or halogen.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of first embodiment of the invention wafer resistor.
Fig. 2 is the schematic diagram of second embodiment of the invention wafer resistor.
Fig. 3 is the schematic diagram of third embodiment of the invention wafer resistor.
Fig. 4 is the schematic diagram of fourth embodiment of the invention wafer resistor.
Critical piece symbol description:
10 wafer resistors
11 base materials
12 first electrodes
13 second electrodes
14 resistive layers
15 first protective layers
16 second protective layers
17 first coating
18 second coating
19 the 3rd coating
20 wafer resistors
25 first protective layers
26 second protective layers
30 wafer resistors
35 first protective layers
36 second protective layers
37 first coating
38 second coating
39 the 3rd coating
40 wafer resistors
41 the 3rd protective layers
46 second protective layers
47 first coating
48 second coating
49 the 3rd coating
111 first surfaces
112 second surfaces
161,162 side is covered
163 overlay planes
164 appear plane
Bottom 165
251 cover side
252 overlay planes
Bottom 253
261 cover side
262 appear plane
361 cover side
362 appear plane
411 cover side
412 appear plane
461 cover side
462 overlay planes
Bottom 463.
Embodiment
Fig. 1 is the schematic diagram of first embodiment of the invention wafer resistor.In one embodiment, wafer resistor 10 of the present invention comprises: 12, two, base material 11, two first electrode the second electrode 13, resistive layer 14, at least one protective layer 15,16 and an at least one coating 17,18,19.This base material 11 has first surface 111 and a second surface 112, and this second surface 112 is relative with this first surface 111.Two the first electrodes 12 are arranged at this first surface 111, and two the first electrodes 12 are separated by a spacing.The side of two the first electrodes 12 is concordant with two sides of this base material 11 respectively.Two the second electrodes 13 are arranged at this second surface 112, and two the second electrodes 13 are separated by a spacing.The side of two the second electrodes 13 is concordant with two sides of this base material 11 respectively.
This resistive layer 14 is arranged at this first surface 111, and two, cover part the first electrode 12, to be electrically connected with two the first electrodes 12.This at least one protective layer 15,16 is arranged on this resistive layer 14, and two, cover part the first electrode 12, this at least one protective layer comprises at least two and covers side and at least one overlay planes.In one embodiment, this at least one protective layer comprises one first protective layer 15 and one second protective layer 16, and this first protective layer 15 is arranged on this resistive layer 14, and this second protective layer 16 is arranged on this first protective layer 15, and two, cover part the first electrode 12.This second protective layer 16 comprises at least two and covers side 161,162 and at least one overlay planes 163.This overlay planes 163 is arranged at two and covers between side 161,162.Cover side 161,162 relative to this overlay planes 163, two and there is angle of inclination.
This second protective layer 16 also comprises one and appears plane 164, this thickness H2 appearing bottom plane 164 to of this second protective layer 16 165 be greater than this overlay planes 163 to this bottom 165 thickness H1, to form convex structure.
In one embodiment; this second protective layer 16 makes with two steps, and first step first forms this overlay planes 163 and this covering side 161, and second step forms this again and appears plane 164 and this covering side 162; and be covered on this overlay planes 163 of part, to form convex structure.
In another embodiment; this second protective layer 16 makes in a stacked; first wherein one deck that this overlay planes 163 and this covering side 161 are this second protective layer 16 is separately made; and this appears another layer that plane 164 and this covering side 162 are this second protective layer 16; stacking this layer that this appears plane 164 and this covering side 162 on this overlay planes 163 of part, to form convex structure.
Described in this at least one coating 17,18,19 covers at least two cover side 161,162, at least one overlay planes 163, part two the first electrodes 12 and two the second electrodes 13.In one embodiment, this at least one coating comprises one first coating 17,1 second coating 18 and one the 3rd coating 19, described in this first coating 17 covers at least two cover side 161,162, at least one overlay planes 163, part two the first electrodes 12 and two the second electrodes 13.This first coating 17 covers the side of two the first electrodes 12 and the side of two the second electrodes 13 completely, to be electrically connected the first electrode 12 and the second electrode 13.This first coating 17 is can electric conducting material, and preferably, it is selected from the group be made up of nickel, palladium, platinum, gold, nickel-chromium, nickel-boron, nickel-phosphorus and composition thereof.This second coating 18 covers this first coating 17, and preferably, this second coating 18 is nickel (Ni).3rd coating 19 covers this second coating 18, and preferably, the 3rd coating 19 is tin (Sn).
When wafer resistor is used in the atmosphere of harsh environment such as sulfur-bearing or halogen, because used electrode material comprises silver or copper metal, under specific temperature humidity, silver or copper metal can produce electrochemical reaction with sulphur, sulfide and the sulfur-containing compound propagated in air or halogen, the products such as generation silver sulfide (Silver Sulfide), copper sulfide (Copper Sulfide) or silver bromide (SilverBromide).The sulphur of (Airborne), sulfide and sulfur-containing compound is propagated in air; such as hydrogen sulfide (Hydrogen Sulfide) is by the diffusion of self gas, can produce electrochemical reaction on the interface of organic protection layer (Organic Overcoat) with electrode.Because the diffusion coefficient (Diffusion Coefficient) of gas itself is much larger than the diffusion coefficient of solid, cause the species of sulfur-bearing (Surfur-containing Species) inwardly to spread, silver or copper metal are then to outdiffusion.During electrochemical reaction, sulphur gas little by little can corrode the increase that silver or copper metal cause resistance value, As time goes on, finally causes resistance value infinity to become open circuit.The product as flower-shaped (Flower-Like) is can be observed, the sulphur be namely commonly called as flower (Flower of Sulfur from the outward appearance of element; FOS).
Generally speaking, the sulphur propagated in air, sulfide and sulfur-containing compound be by dissimilar metal between contact junction diffuse into, therefore such as often to diffuse into by between the first coating 17 and the second protective layer 16.For avoiding sulphur flower to cause wafer resistor to damage, cannot use even, electrode and extraneous distance can be increased, make sulphur, sulfide and the sulfur-containing compound propagated in air be difficult to enter and electrode reaction.Wafer resistor 10 of the present invention utilizes two to cover side 161,162 and this overlay planes 163, make described coating 17,18,19 cover two and cover side 161,162 and this overlay planes 163, to extend two the first electrodes 12 and extraneous distance, sulphur, sulfide and the sulfur-containing compound propagated in air is made to be difficult to enter and to react with two the first electrodes 12.In one embodiment, two length covering side 161,162 and this overlay planes 163 are 1/2(L2-L1), be about 0.1 millimeter (mm).And utilize two convex structures covering side 161,162 and the formation of this overlay planes 163, cause difference in height, make sulphur, sulfide and the sulfur-containing compound propagated in air be difficult to enter and electrode reaction further.Therefore wafer resistor 10 of the present invention can resist the corrosion for electrode of sulphur, sulfide and the harmful substance such as sulfur-containing compound or halogen.
Further, wafer resistor 10 of the present invention utilizes two convex structures covering side 161,162 and the formation of this overlay planes 163, and in manufacture method, compatibility is quite high, is conducive to a large amount of production and can reduces manufacturing cost.
Fig. 2 shows the schematic diagram of second embodiment of the invention wafer resistor.Compared to the first embodiment, element identical in a second embodiment then gives similar elements numbering.The difference of second embodiment of the invention and the first embodiment is; this first protective layer 25 of second embodiment wafer resistor 20 is arranged on this resistive layer 14; and two, cover part the first electrode 12; this first protective layer 25 comprises at least one covering side 251 and at least one overlay planes 252; this second protective layer 26 is arranged on this first protective layer 25, and this second protective layer 26 comprises at least one covering side 261.This second protective layer 26 also comprises one and appears plane 262, this overlay planes 252 that this thickness H4 appearing bottom plane 262 to of this first protective layer 25 253 is greater than this first protective layer 25 to this first protective layer 25 this bottom 253 thickness H3.Therefore, the second embodiment wafer resistor 20 can reach above-mentioned effect of the first embodiment wafer resistor 10.
Fig. 3 shows the schematic diagram of third embodiment of the invention wafer resistor.Compared to the first embodiment, element identical in the third embodiment then gives similar elements numbering.The difference of third embodiment of the invention and the first embodiment is; at least one protective layer 35,36 of the 3rd embodiment wafer resistor 30 is arranged on this resistive layer 14; and fully other part two the first electrodes 12 on overlay planes, this at least one protective layer comprises at least one covering side.This wafer resistor 30 comprises one first protective layer 35 and one second protective layer 36; this first protective layer 35 is arranged on this resistive layer 14; this second protective layer 36 is arranged on this first protective layer 35; and fully other part two the first electrodes 12 on overlay planes; do not cover the side of two the first electrodes 12, this second protective layer 36 comprises at least one covering side 361 and and appears plane 362.
At least one coating 37,38,39 of this wafer resistor 30 covers side and two second electrodes 13 of these 361, two the first electrodes 12 at least one covering side.This at least one coating comprises one first coating 37,1 second coating 38 and one the 3rd coating 39, this the first coating 37 cover part this appear plane 362, the side of these 361, two the first electrodes 12 at least one covering side and the side of two the second electrodes 13 and part two the second electrodes 13, this second coating 38 covers this first coating the 37, three coating 39 and covers this second coating 38.
Wafer resistor 30 of the present invention utilizes this second protective layer 36 fully to cover other plane upper part two the first electrodes 12; and described coating 37,38,39 covers the side of this covering side 361 and two the first electrodes 12, also makes sulphur, sulfide and the sulfur-containing compound propagated in air be difficult to enter and electrode reaction.Therefore wafer resistor 30 of the present invention can resist the corrosion for electrode of sulphur, sulfide and the harmful substance such as sulfur-containing compound or halogen.
Fig. 4 shows the schematic diagram of fourth embodiment of the invention wafer resistor.Compared to the 3rd embodiment, element identical in the fourth embodiment then gives similar elements numbering.The difference of fourth embodiment of the invention and the 3rd embodiment is; 4th embodiment wafer resistor 40 comprises one the 3rd protective layer 41; be arranged on this second protective layer 46; 3rd protective layer 41 comprises at least one covering side 411, and this second protective layer 46 comprises at least one covering side 461 and at least one overlay planes 462.
This at least one coating covers this at least one covering side and this at least one overlay planes of this second protective layer, and this at least one covering side of the 3rd protective layer.In one embodiment; this at least one coating comprises one first coating 47,1 second coating 48 and one the 3rd coating 49, and this first coating 47 covers this covering side 411 of the 3rd protective layer 41, the side of this overlay planes 462 of this second protective layer 46 and these 461, two the first electrodes 12 at least one covering side and two the second electrodes 13.This second coating 48 covers this first coating 47.3rd coating 49 covers this second coating 48.
3rd protective layer 41 also comprises one and appears plane 412; this overlay planes 462 that this thickness appearing bottom plane 412 to of this second protective layer 46 463 is greater than this second protective layer 46 to this second protective layer 46 this bottom 463 thickness, also form convex structure.
Therefore; wafer resistor 40 of the present invention utilizes this covering side 411 of the 3rd protective layer 41 and this covering side 461 of this second protective layer 46 and this overlay planes 462; to extend two the first electrodes 12 and extraneous distance, sulphur, sulfide and the sulfur-containing compound propagated in air is made to be difficult to enter and to react with two the first electrodes 12.Therefore wafer resistor 40 of the present invention can resist the corrosion for electrode of sulphur, sulfide and the harmful substance such as sulfur-containing compound or halogen.
But above-described embodiment is only and principle of the present invention and effect thereof is described, and is not used to limit the present invention.Therefore, those skilled in the art modify to above-described embodiment and change still not de-spirit of the present invention.Interest field of the present invention should listed by appending claims.
Claims (12)
1. a wafer resistor, it comprises:
One base material, described base material has a first surface and a second surface, and this second surface is relative with this first surface;
Two the first electrodes, described two the first electrodes are arranged at this first surface;
Two the second electrodes, described two the second electrodes are arranged at this second surface;
One resistive layer, described resistive layer is arranged at this first surface, and two, cover part the first electrode;
At least one protective layer, described at least one protective layer is arranged on this resistive layer, and two, cover part the first electrode, described at least one protective layer comprises at least two and covers side and at least one overlay planes; And
At least one coating, described in described at least one coating covers, at least two cover side, at least one overlay planes, part two the first electrodes and two the second electrodes.
2. wafer resistor according to claim 1; it is characterized in that: described at least one protective layer comprises one first protective layer and one second protective layer; this first protective layer is arranged on this resistive layer; this second protective layer is arranged on this first protective layer, and this second protective layer comprises at least two and covers side and at least one overlay planes.
3. wafer resistor according to claim 2; it is characterized in that: described second protective layer also comprises one and appears plane, this thickness appeared bottom plane to of this second protective layer be greater than this at least one overlay planes to this second protective layer this bottom thickness.
4. wafer resistor according to claim 1; it is characterized in that: described at least one protective layer comprises one first protective layer and one second protective layer; this first protective layer is arranged on this resistive layer; this first protective layer comprises at least one covering side and at least one overlay planes; this second protective layer is arranged on this first protective layer, and this second protective layer comprises at least one covering side.
5. wafer resistor according to claim 4; it is characterized in that: described second protective layer also comprises one and appears plane, this at least one overlay planes that this thickness appeared bottom plane to of this first protective layer is greater than this first protective layer to this first protective layer this bottom thickness.
6. wafer resistor according to claim 1, it is characterized in that: described at least one coating comprises one first coating, one second coating and one the 3rd coating, described in this first coating covers, at least two cover side, at least one overlay planes, part two the first electrodes and two the second electrodes, this second coating covers this first coating, and the 3rd coating covers this second coating.
7. a wafer resistor, it comprises:
One base material, described base material has a first surface and a second surface, and this second surface is relative with this first surface;
Two the first electrodes, described two the first electrodes are arranged at this first surface;
Two the second electrodes, described two the second electrodes are arranged at this second surface;
One resistive layer, described resistive layer is arranged at this first surface, and two, cover part the first electrode;
At least one protective layer, described at least one protective layer is arranged on this resistive layer, and fully other part two the first electrodes on overlay planes, this at least one protective layer comprises at least one covering side; And
At least one coating, described at least one coating covers this at least one covering side, the side of two the first electrodes and two the second electrodes.
8. wafer resistor according to claim 7; it is characterized in that: described at least one protective layer comprises one first protective layer and one second protective layer; this first protective layer is arranged on this resistive layer; this second protective layer is arranged on this first protective layer; and fully other part two the first electrodes on overlay planes, this second protective layer comprises at least one covering side and and appears plane.
9. wafer resistor according to claim 8, it is characterized in that: described at least one coating comprises one first coating, one second coating and one the 3rd coating, this the first coating cover part this appear plane, this at least one covering side, the side of two the first electrodes and the side of two the second electrodes and part two the second electrodes, this second coating covers this first coating, and the 3rd coating covers this second coating.
10. wafer resistor according to claim 7; it is characterized in that: described at least one protective layer comprises one first protective layer, one second protective layer and one the 3rd protective layer; this first protective layer is arranged on this resistive layer; this second protective layer is arranged on this first protective layer; and fully other part two the first electrodes on overlay planes; this second protective layer comprises at least one covering side and at least one overlay planes; 3rd protective layer is arranged on this second protective layer, and the 3rd protective layer comprises at least one covering side.
11. wafer resistors according to claim 10; it is characterized in that: described at least one coating comprises one first coating, one second coating and one the 3rd coating; this first coating covers this at least one covering side of the 3rd protective layer, this at least one overlay planes of this second protective layer and this at least one covering side, the side of two the first electrodes and two the second electrodes; this second coating covers this first coating, and the 3rd coating covers this second coating.
12. wafer resistors according to claim 10; it is characterized in that: described 3rd protective layer also comprises one and appears plane, this at least one overlay planes that this thickness appeared bottom plane to of this second protective layer is greater than this second protective layer to this second protective layer this bottom thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410020008.4A CN104795192A (en) | 2014-01-16 | 2014-01-16 | Wafer resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410020008.4A CN104795192A (en) | 2014-01-16 | 2014-01-16 | Wafer resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104795192A true CN104795192A (en) | 2015-07-22 |
Family
ID=53559941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410020008.4A Pending CN104795192A (en) | 2014-01-16 | 2014-01-16 | Wafer resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104795192A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06275401A (en) * | 1993-03-24 | 1994-09-30 | Rohm Co Ltd | Chip resistor |
| JPH09120902A (en) * | 1995-10-24 | 1997-05-06 | Hokuriku Electric Ind Co Ltd | Chip electronic part and method for manufacturing the same |
| CN101067981A (en) * | 2007-06-14 | 2007-11-07 | 广东风华高新科技股份有限公司 | Method for producing sheet type thermosensitive resistor |
| CN101840760A (en) * | 2009-03-16 | 2010-09-22 | 国巨股份有限公司 | Chip resistor and manufacturing method thereof |
-
2014
- 2014-01-16 CN CN201410020008.4A patent/CN104795192A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06275401A (en) * | 1993-03-24 | 1994-09-30 | Rohm Co Ltd | Chip resistor |
| JPH09120902A (en) * | 1995-10-24 | 1997-05-06 | Hokuriku Electric Ind Co Ltd | Chip electronic part and method for manufacturing the same |
| CN101067981A (en) * | 2007-06-14 | 2007-11-07 | 广东风华高新科技股份有限公司 | Method for producing sheet type thermosensitive resistor |
| CN101840760A (en) * | 2009-03-16 | 2010-09-22 | 国巨股份有限公司 | Chip resistor and manufacturing method thereof |
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Application publication date: 20150722 |
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