CN101043784B - 混合等离子体反应器 - Google Patents

混合等离子体反应器 Download PDF

Info

Publication number
CN101043784B
CN101043784B CN2007100868758A CN200710086875A CN101043784B CN 101043784 B CN101043784 B CN 101043784B CN 2007100868758 A CN2007100868758 A CN 2007100868758A CN 200710086875 A CN200710086875 A CN 200710086875A CN 101043784 B CN101043784 B CN 101043784B
Authority
CN
China
Prior art keywords
power
frequency
source current
negative electrode
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007100868758A
Other languages
English (en)
Chinese (zh)
Other versions
CN101043784A (zh
Inventor
李元默
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Weihai dianmei Shiguang electromechanical Co Ltd
DMS Co Ltd
Original Assignee
Display Manufacturing Services Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Display Manufacturing Services Co Ltd filed Critical Display Manufacturing Services Co Ltd
Publication of CN101043784A publication Critical patent/CN101043784A/zh
Application granted granted Critical
Publication of CN101043784B publication Critical patent/CN101043784B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CN2007100868758A 2006-03-21 2007-03-21 混合等离子体反应器 Expired - Fee Related CN101043784B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2006-0025663 2006-03-21
KR1020060025663A KR100777151B1 (ko) 2006-03-21 2006-03-21 하이브리드형 플라즈마 반응장치
KR1020060025663 2006-03-21

Publications (2)

Publication Number Publication Date
CN101043784A CN101043784A (zh) 2007-09-26
CN101043784B true CN101043784B (zh) 2011-01-26

Family

ID=38532112

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007100868758A Expired - Fee Related CN101043784B (zh) 2006-03-21 2007-03-21 混合等离子体反应器

Country Status (4)

Country Link
US (1) US20070221331A1 (ko)
KR (1) KR100777151B1 (ko)
CN (1) CN101043784B (ko)
TW (1) TWI346359B (ko)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090004873A1 (en) * 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
KR100892249B1 (ko) * 2007-11-21 2009-04-09 주식회사 디엠에스 플라즈마 반응장치
EP2249372B1 (en) * 2008-03-20 2013-01-02 Ruhr-Universität Bochum Method for controlling ion energy in radio frequency plasmas
US8760431B2 (en) * 2008-07-17 2014-06-24 Samsung Display Co., Ltd. Display apparatus
US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
US8741394B2 (en) * 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101225544B1 (ko) * 2011-03-24 2013-01-23 주식회사 디엠에스 하이브리드 플라즈마 소스와 정전척 히터를 이용한 멀티 스택 레이어 마스크 구조의 산화막 식각방법
US8652298B2 (en) * 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
CN103426807B (zh) * 2012-05-18 2016-04-13 中国地质大学（北京） 一种配置取放装置和调节工件的位置的半导体刻蚀装置
CN103854945A (zh) * 2012-12-05 2014-06-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体设备及其反应腔室
CN104754850B (zh) * 2013-12-31 2019-11-05 中微半导体设备(上海)股份有限公司 一种电感耦合型等离子处理器
CN104862671B (zh) 2014-02-24 2019-08-23 北京北方华创微电子装备有限公司 一种反应腔室及等离子体加工设备
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
KR101874802B1 (ko) * 2016-04-19 2018-07-05 피에스케이 주식회사 플라스마 소스 및 이를 포함하는 기판 처리 장치
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
KR102619574B1 (ko) * 2017-02-10 2023-12-28 어플라이드 머티어리얼스, 인코포레이티드 딥 트렌치에서의 저온 선택적 에피택시를 위한 방법 및 장치
CN107256822B (zh) * 2017-07-27 2019-08-23 北京北方华创微电子装备有限公司 上电极组件及反应腔室
US10784091B2 (en) 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
CN108093551B (zh) * 2017-12-20 2020-03-13 西安交通大学 用于激励产生均匀放电高活性等离子体的复合电源装置
TWI697261B (zh) * 2018-05-22 2020-06-21 呈睿國際股份有限公司 感應耦合電漿蝕刻系統及其切換式匹配裝置
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
EP3834285A4 (en) 2018-08-10 2022-07-20 Eagle Harbor Technologies, Inc. PLASMA JACKET CONTROL FOR RF PLASMA REACTORS
EP3994716A4 (en) * 2019-07-02 2023-06-28 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation
EP4082036A4 (en) 2019-12-24 2023-06-07 Eagle Harbor Technologies, Inc. NANOSECOND PULSE RF ISOLATION FOR PLASMA SYSTEMS
CN110841438A (zh) * 2019-12-24 2020-02-28 杭州卓天科技有限公司 隔爆型等离子本体反应器
CN110888380B (zh) * 2019-12-25 2021-11-16 北京北方华创微电子装备有限公司 一种半导体设备中滤波电路的控制方法和半导体设备
CN111192812B (zh) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 电感耦合装置和半导体处理设备
KR102482734B1 (ko) * 2020-11-13 2022-12-30 충남대학교산학협력단 고주파 펄스 소스 및 저주파 펄스 바이어스를 이용한 플라즈마 극고종횡비 식각 방법
CN113113282B (zh) * 2021-04-01 2023-11-14 北京北方华创微电子装备有限公司 上电极电源功率调节方法、半导体工艺设备
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
CN117957642A (zh) * 2021-09-15 2024-04-30 东京毅力科创株式会社 等离子体处理装置
TWI801058B (zh) * 2021-12-23 2023-05-01 明遠精密科技股份有限公司 一種複合式電漿源及其運作方法
CN117954370B (zh) * 2024-03-27 2024-06-25 上海谙邦半导体设备有限公司 一种静电吸盘控制方法、静电吸盘及半导体加工设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641150A1 (en) * 1992-05-13 1995-03-01 OHMI, Tadahiro Process apparatus
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US20030077910A1 (en) * 2001-10-22 2003-04-24 Russell Westerman Etching of thin damage sensitive layers using high frequency pulsed plasma
US20030094239A1 (en) * 2000-06-02 2003-05-22 Quon Bill H. Apparatus and method for improving electron ecceleration
WO2004008816A2 (fr) * 2002-07-11 2004-01-22 Alcatel Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance
US20040222189A1 (en) * 2001-06-29 2004-11-11 Lam Research Corporation Apparatus and method for radio frequency decoupling and bias voltage control in a plasma reactor
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
CN1575089A (zh) * 2003-06-12 2005-02-02 三星电子株式会社 等离子箱体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132551A (en) 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
JP2000269196A (ja) * 1999-03-19 2000-09-29 Toshiba Corp プラズマ処理方法及びプラズマ処理装置
JP2001102360A (ja) 1999-09-28 2001-04-13 Toshiba Corp 半導体製造装置及び半導体製造装置の清浄化方法
JP3920015B2 (ja) 2000-09-14 2007-05-30 東京エレクトロン株式会社 Ｓｉ基板の加工方法
US7976673B2 (en) * 2003-05-06 2011-07-12 Lam Research Corporation RF pulsing of a narrow gap capacitively coupled reactor
KR20050010208A (ko) * 2003-07-18 2005-01-27 주성엔지니어링(주) 유도결합 플라즈마 식각 장치
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
US7393432B2 (en) * 2004-09-29 2008-07-01 Lam Research Corporation RF ground switch for plasma processing system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
EP0641150A1 (en) * 1992-05-13 1995-03-01 OHMI, Tadahiro Process apparatus
US20030094239A1 (en) * 2000-06-02 2003-05-22 Quon Bill H. Apparatus and method for improving electron ecceleration
US20040222189A1 (en) * 2001-06-29 2004-11-11 Lam Research Corporation Apparatus and method for radio frequency decoupling and bias voltage control in a plasma reactor
US20030077910A1 (en) * 2001-10-22 2003-04-24 Russell Westerman Etching of thin damage sensitive layers using high frequency pulsed plasma
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
WO2004008816A2 (fr) * 2002-07-11 2004-01-22 Alcatel Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance
CN1575089A (zh) * 2003-06-12 2005-02-02 三星电子株式会社 等离子箱体

Also Published As

Publication number Publication date
TWI346359B (en) 2011-08-01
KR20070096205A (ko) 2007-10-02
TW200739723A (en) 2007-10-16
KR100777151B1 (ko) 2007-11-16
CN101043784A (zh) 2007-09-26
US20070221331A1 (en) 2007-09-27

Similar Documents

Publication Publication Date Title
CN101043784B (zh) 混合等离子体反应器
KR101513752B1 (ko) 기판 프로세싱을 위한 방법 및 장치
KR102060223B1 (ko) 높은 종횡비 피쳐들을 에칭하기 위한 다중 주파수 전력 변조
KR101418438B1 (ko) 플라즈마 발생장치
CN101426949B (zh) 用于等离子蚀刻室的集成的电容性和电感性电源
JP5470421B2 (ja) プラズマ処理チャンバ
JP4817528B2 (ja) 電子ワークピース製造装置
US9017533B2 (en) Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning
CN109216144B (zh) 一种具有低频射频功率分布调节功能的等离子反应器
CN201465987U (zh) 等离子体处理装置
US8920611B2 (en) Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning
EP1079671A2 (en) Antenna device for generating inductively coupled plasma
CN111183504B (zh) 制造过程中的超局部和等离子体均匀性控制
KR20080024693A (ko) 대면적 유도 결합 플라즈마 반응기
CN114975064A (zh) 混合等离子体源阵列
KR100786537B1 (ko) 반도체 기판 공정 챔버에 사용되는 다중 플라즈마 발생소스
KR101572100B1 (ko) 복합 주파수를 이용한 대면적 플라즈마 반응기
WO2008143404A1 (en) Plasma generating apparatus
US10381238B2 (en) Process for performing self-limited etching of organic materials
KR100391063B1 (ko) 유도결합으로 보강된 축전결합형 플라즈마 발생장치 및플라즈마 발생방법
KR100753869B1 (ko) 복합형 플라즈마 반응기
KR100785404B1 (ko) 유도 결합형 플라즈마 안테나 및 이를 이용한 기판 처리장치와 방법
KR102467966B1 (ko) 하이브리드 플라즈마 발생 장치 및 하이브리드 플라즈마 발생 장치의 제어방법
CN112151343B (zh) 一种电容耦合等离子体处理装置及其方法
KR100404723B1 (ko) 낮은 종횡비를 갖는 유도결합형 플라즈마 발생장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: WEIHAI DIANMEI SHIGUANG MECHANICAL AND ELECTRONIC

Effective date: 20140303

TR01 Transfer of patent right

Effective date of registration: 20140303

Address after: Gyeonggi Do, South Korea

Patentee after: Display Production Service Co., Ltd.

Patentee after: Weihai dianmei Shiguang electromechanical Co Ltd

Address before: Gyeonggi Do, South Korea

Patentee before: Display Production Service Co., Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110126

Termination date: 20150321

EXPY Termination of patent right or utility model