TWI346359B - Hybrid plasma reactor - Google Patents

Hybrid plasma reactor

Info

Publication number
TWI346359B
TWI346359B TW096109435A TW96109435A TWI346359B TW I346359 B TWI346359 B TW I346359B TW 096109435 A TW096109435 A TW 096109435A TW 96109435 A TW96109435 A TW 96109435A TW I346359 B TWI346359 B TW I346359B
Authority
TW
Taiwan
Prior art keywords
plasma reactor
hybrid plasma
hybrid
reactor
plasma
Prior art date
Application number
TW096109435A
Other languages
Chinese (zh)
Other versions
TW200739723A (en
Inventor
Weon-Mook Lee
Original Assignee
Dms Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dms Co Ltd filed Critical Dms Co Ltd
Publication of TW200739723A publication Critical patent/TW200739723A/en
Application granted granted Critical
Publication of TWI346359B publication Critical patent/TWI346359B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW096109435A 2006-03-21 2007-03-20 Hybrid plasma reactor TWI346359B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060025663A KR100777151B1 (en) 2006-03-21 2006-03-21 Hybrid coupled plasma reactor with icp and ccp functions

Publications (2)

Publication Number Publication Date
TW200739723A TW200739723A (en) 2007-10-16
TWI346359B true TWI346359B (en) 2011-08-01

Family

ID=38532112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109435A TWI346359B (en) 2006-03-21 2007-03-20 Hybrid plasma reactor

Country Status (4)

Country Link
US (1) US20070221331A1 (en)
KR (1) KR100777151B1 (en)
CN (1) CN101043784B (en)
TW (1) TWI346359B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697261B (en) * 2018-05-22 2020-06-21 呈睿國際股份有限公司 Inductively coupled plasma (icp) etching system and switching matchbox thereof

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US8414736B2 (en) * 2009-09-03 2013-04-09 Applied Materials, Inc. Plasma reactor with tiltable overhead RF inductive source
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KR101225544B1 (en) * 2011-03-24 2013-01-23 주식회사 디엠에스 Multi-stack Mask layer silicon-oxide etching method using the Hybrid Plasma Source and ESC heater
US8652298B2 (en) * 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
CN103426807B (en) * 2012-05-18 2016-04-13 中国地质大学（北京） A kind of semiconductor etching apparatus configuring the position of fetching device and adjustment workpiece
CN103854945A (en) * 2012-12-05 2014-06-11 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma equipment and reaction chamber thereof
CN104754850B (en) * 2013-12-31 2019-11-05 中微半导体设备(上海)股份有限公司 A kind of inductive type plasma processor
CN104862671B (en) 2014-02-24 2019-08-23 北京北方华创微电子装备有限公司 A kind of reaction chamber and plasma processing device
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
KR101874802B1 (en) * 2016-04-19 2018-07-05 피에스케이 주식회사 Plasma source and apparatus for treating substrate including the same
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US20180230624A1 (en) * 2017-02-10 2018-08-16 Applied Materials, Inc. Method and apparatus for low temperature selective epitaxy in a deep trench
CN107256822B (en) * 2017-07-27 2019-08-23 北京北方华创微电子装备有限公司 Top electrode assembly and reaction chamber
US10784091B2 (en) * 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
CN108093551B (en) * 2017-12-20 2020-03-13 西安交通大学 Composite power supply device for exciting and generating uniform discharge high-activity plasma
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
WO2020033931A1 (en) 2018-08-10 2020-02-13 Eagle Harbor Technologies, Inc. Plasma sheath control for rf plasma reactors
WO2021003319A1 (en) * 2019-07-02 2021-01-07 Eagle Harbor Technologies. Inc Nanosecond pulser rf isolation
US11527383B2 (en) 2019-12-24 2022-12-13 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
CN110888380B (en) * 2019-12-25 2021-11-16 北京北方华创微电子装备有限公司 Control method of filter circuit in semiconductor equipment and semiconductor equipment
CN111192812B (en) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 Inductive coupling device and semiconductor processing equipment
KR102482734B1 (en) * 2020-11-13 2022-12-30 충남대학교산학협력단 Method for plasma etching ultra high aspect ratio using radio frequency pulse source and low frequency pulse bias
CN113113282B (en) * 2021-04-01 2023-11-14 北京北方华创微电子装备有限公司 Power regulation method for upper electrode power supply and semiconductor process equipment
US11967483B2 (en) * 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
JPWO2023042857A1 (en) * 2021-09-15 2023-03-23
TWI801058B (en) * 2021-12-23 2023-05-01 明遠精密科技股份有限公司 A hybrid plasma source and operation method thereof
CN117954370B (en) * 2024-03-27 2024-06-25 上海谙邦半导体设备有限公司 Electrostatic chuck control method, electrostatic chuck and semiconductor processing equipment

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Publication number Priority date Publication date Assignee Title
TWI697261B (en) * 2018-05-22 2020-06-21 呈睿國際股份有限公司 Inductively coupled plasma (icp) etching system and switching matchbox thereof

Also Published As

Publication number Publication date
CN101043784B (en) 2011-01-26
CN101043784A (en) 2007-09-26
KR20070096205A (en) 2007-10-02
US20070221331A1 (en) 2007-09-27
TW200739723A (en) 2007-10-16
KR100777151B1 (en) 2007-11-16

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees