TWI697261B - Inductively coupled plasma (icp) etching system and switching matchbox thereof - Google Patents

Inductively coupled plasma (icp) etching system and switching matchbox thereof Download PDF

Info

Publication number
TWI697261B
TWI697261B TW107117340A TW107117340A TWI697261B TW I697261 B TWI697261 B TW I697261B TW 107117340 A TW107117340 A TW 107117340A TW 107117340 A TW107117340 A TW 107117340A TW I697261 B TWI697261 B TW I697261B
Authority
TW
Taiwan
Prior art keywords
power
switching
matching network
power supply
etching system
Prior art date
Application number
TW107117340A
Other languages
Chinese (zh)
Other versions
TW202005480A (en
Inventor
洪再和
Original Assignee
呈睿國際股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 呈睿國際股份有限公司 filed Critical 呈睿國際股份有限公司
Priority to TW107117340A priority Critical patent/TWI697261B/en
Priority to CN201910412317.9A priority patent/CN110517942B/en
Publication of TW202005480A publication Critical patent/TW202005480A/en
Application granted granted Critical
Publication of TWI697261B publication Critical patent/TWI697261B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Abstract

The present invention relates to an inductively coupled plasma (ICP) etching system and switching matchbox thereof. The switching matchbox has an RF power input, an RF power output, a matching network and a switching unit. The switching unit is used to couple the RF power input to the RF output through the matching network or directly couple the RF power input to the RF output. Since an output impedance of the matching network matches a load impedance under a clean mode of the ICP etching system, the switching unit is synchronously switched to make that the RF power input is coupled to the RF power output through the matching network under the clean mode. Therefore, a clean efficiency is increased by increasing a power of the RF power and decreasing a reflecting power.

Description

感應耦合電漿蝕刻系統及其切換式匹配裝置Inductively coupled plasma etching system and its switching matching device

本發明係關於一種射頻電源之匹配裝置，尤指一種用於感應耦合電漿蝕刻系統之切換式匹配裝置。The invention relates to a matching device for radio frequency power supply, in particular to a switching type matching device for an inductively coupled plasma etching system.

在目前半導體8吋金屬蝕刻設備中，係以美商應用材料股份有限公司(AMAT)推出的金屬蝕刻去耦電漿源設備(Metal Etch decoupled plasma source; Metal Etch DPS)(以下簡稱DPS金屬蝕刻設備)為主，如圖6所示，該DPS金屬蝕刻設備50具有一真空腔室51、一耦合線圈52及一基座53，其中該耦合線圈52係耦接至一第一射頻電源供應器55，該基座53則耦接至一第二射頻電源供應器56，該第一及第二射頻電源供應器55、56係由一製程控制器54加以控制，以將各自產生的射頻電源感應耦合至該真空腔室51，以激發該真空腔室51產生電漿來進行蝕刻程序。Among current semiconductor 8-inch metal etching equipment, it is Metal Etch decoupled plasma source (Metal Etch decoupled plasma source; Metal Etch DPS) (hereinafter referred to as DPS metal etching equipment) introduced by American Applied Materials Co., Ltd. (AMAT) ) Mainly, as shown in FIG. 6, the DPS metal etching device 50 has a vacuum chamber 51, a coupling coil 52 and a base 53, wherein the coupling coil 52 is coupled to a first RF power supply 55 The base 53 is coupled to a second RF power supply 56. The first and second RF power supplies 55 and 56 are controlled by a process controller 54 to inductively couple the RF power generated by each To the vacuum chamber 51, the vacuum chamber 51 is excited to generate plasma to perform the etching process.

由於DPS金屬蝕刻設備50會執行不同蝕刻製程，因此採用一種中頻範圍(1.75MHz~2.165MHz)之變頻射頻電源供應器，並依據目前蝕刻製程而動態調整其射頻電源，所輸出的射頻電源則直接輸出至耦合線圈；然而，實際使用時，該DPS金屬蝕刻設備的反射功率約為射頻電源之約10-20%，與理想值(1%以下)仍有相當大的差距；簡言之，目前該DPS金屬蝕刻設備的反射功率過大。Since the DPS metal etching equipment 50 will perform different etching processes, a frequency conversion RF power supply with an intermediate frequency range (1.75MHz~2.165MHz) is used, and its RF power is dynamically adjusted according to the current etching process. The output RF power is Direct output to the coupling coil; however, in actual use, the reflected power of the DPS metal etching equipment is about 10-20% of the RF power supply, and there is still a considerable gap from the ideal value (below 1%); in short, At present, the reflected power of the DPS metal etching equipment is too large.

此外，該DPS金屬蝕刻設備在幾次蝕刻製程後必須進行一次腔室清潔程序，即啟動清潔模式，將腔室內壁沾附的異物移除；一般為加速清潔速率，會將變頻射頻電源供應器調整至滿功率輸出，但由於該變頻射頻電源供應器的反射功率過大，縱使以滿功率輸出輸出，清潔效率仍受限，而有必要進一步改良之。In addition, the DPS metal etching equipment must perform a chamber cleaning procedure after several etching processes, that is, start the cleaning mode to remove foreign materials adhering to the inner wall of the chamber; generally to accelerate the cleaning rate, the frequency conversion RF power supply will be used Adjusted to full power output, but because the reflected power of the variable frequency RF power supply is too large, even if the output is output at full power, the cleaning efficiency is still limited, and further improvement is necessary.

有鑑於前揭DPS金屬蝕刻設備在清潔模式下因反射功率過大造成清潔效率不彰之技術缺陷，本發明主要目的係提供一種感應耦合電漿蝕刻系統之切換式匹配裝置，以改善該技術缺陷。In view of the technical defect of the previously disclosed DPS metal etching equipment in the cleaning mode that the cleaning efficiency is not good due to excessive reflected power, the main object of the present invention is to provide a switching matching device of an inductively coupled plasma etching system to improve the technical defect.

欲達上述目的所使用的主要技術手段係令該感應耦合電漿蝕刻系統係包含有： 一耦合線圈； 一切換式匹配裝置，係耦接至該耦合線圈，且具有一匹配網路；以及 一第一射頻電源供應器，係透過該切換式匹配裝置耦接至該耦合線圈；其中，該第一射頻電源供應器係提供一蝕刻用射頻電源及一清潔用射頻電源，該蝕刻用射頻電源功率與清潔用射頻電源功率不同；其中： 當該第一射頻電源供應器輸出該蝕刻用射頻電源時，該切換式匹配裝置係切換以直接將該第一射頻電源供應器耦接至該耦合線圈； 當該第一射頻電源供應器輸出該清潔用射頻電源時，該切換式匹配裝置係切換以透過該匹配網路將該清潔用射頻電源傳送至該耦合線圈；其中該匹配網路的輸出阻抗係與該感應耦合電漿蝕刻系統於一清潔模式下的負載相匹配。The main technical means used to achieve the above purpose is that the inductively coupled plasma etching system includes: a coupling coil; a switching matching device coupled to the coupling coil and having a matching network; and a The first RF power supply is coupled to the coupling coil through the switching matching device; wherein, the first RF power supply provides an RF power for etching and a RF power for cleaning, and the RF power for the etching It is different from the power of the RF power supply for cleaning; where: when the first RF power supply outputs the RF power for etching, the switching-type matching device switches to directly couple the first RF power supply to the coupling coil; When the first RF power supply outputs the cleaning RF power, the switching matching device switches to transmit the cleaning RF power to the coupling coil through the matching network; wherein the output impedance of the matching network is Match the load of the inductively coupled plasma etching system in a clean mode.

由上述說明可知，本發明感應耦合電漿蝕刻系統係主要於第一射頻電源供應器與耦合線圈之間耦接有一切換式匹配裝置，當感應耦合電漿蝕刻系統於清潔模式下，該切換單元被該製程控制器控制進行切換，令該射頻電源輸入埠透過該匹配網路耦接至該射頻電源輸出埠，由於該匹配網路的輸出阻抗與該感應耦合電漿蝕刻系統在清潔模式下的負載相匹配，故此時輸出至該耦合線圈的射頻電源之反射功率得有效被降低，而相對提高清潔效率。As can be seen from the above description, the inductively coupled plasma etching system of the present invention is mainly coupled with a switching matching device between the first RF power supply and the coupling coil. When the inductively coupled plasma etching system is in the cleaning mode, the switching unit Controlled by the process controller to switch, so that the RF power input port is coupled to the RF power output port through the matching network, because the output impedance of the matching network and the inductively coupled plasma etching system in the cleaning mode The load is matched, so the reflected power of the RF power output to the coupling coil is effectively reduced at this time, and the cleaning efficiency is relatively improved.

欲達上述目的所使用的主要技術手段係令該感應耦合電漿蝕刻系統之切換式匹配裝置包含有： 一射頻電源輸入埠； 一射頻電源輸出埠； 一匹配網路，其輸出阻抗係與蝕刻系統的一清潔模式下的負載相匹配； 一切換單元，係耦接於該射頻電源輸入埠與該匹配網路之間、於該匹配網路與該射頻電源輸出埠之間，以及於該射頻電源輸入埠與該射頻電源輸出埠之間。The main technical means used to achieve the above purpose is that the switching matching device of the inductively coupled plasma etching system includes: a radio frequency power input port; a radio frequency power output port; a matching network whose output impedance and etching The load is matched in a cleaning mode of the system; a switching unit is coupled between the RF power input port and the matching network, between the matching network and the RF power output port, and at the RF Between the power input port and the RF power output port.

由上述說明可知，本發明主要以切換單元將該射頻電源輸入埠選擇地耦接至該匹配網路及射頻電源輸出埠；如此應用於該感應耦合電漿蝕刻系統中，該切換單元同樣被控制將該射頻電源輸入埠耦接至該射頻電源輸出埠，令射頻電源直接輸出至蝕刻系統之耦合線圈；當感應耦合電漿蝕刻系統於清潔模式下，該切換單元則被控制切換，令該射頻電源輸入埠透過該匹配網路耦接至該射頻電源輸出埠，由於該匹配網路的輸出阻抗與該蝕刻系統在清潔模式下的負載相匹配，故此時輸出至該耦合線圈的射頻電源之反射功率得有效被降低，而相對提高清潔效率。As can be seen from the above description, the present invention mainly uses the switching unit to selectively couple the RF power input port to the matching network and the RF power output port; thus applied to the inductively coupled plasma etching system, the switching unit is also controlled The RF power input port is coupled to the RF power output port, so that the RF power is directly output to the coupling coil of the etching system; when the inductively coupled plasma etching system is in the cleaning mode, the switching unit is controlled to switch, so that the RF The power input port is coupled to the RF power output port through the matching network. Since the output impedance of the matching network matches the load of the etching system in the cleaning mode, the reflection of the RF power output to the coupling coil at this time The power has to be effectively reduced, while the cleaning efficiency is relatively improved.

本發明係針對感應耦合電漿蝕刻系統(以下簡稱蝕刻系統)及其變頻式射頻電源供應器之間提出一切換式匹配器，以解決過大反射功率造成蝕刻系統清潔效率不彰的問題；以下謹以實施例配合圖式詳細說明本發明的技術內容。The present invention proposes a switchable matcher between an inductively coupled plasma etching system (hereinafter referred to as an etching system) and its frequency-converted RF power supply to solve the problem of inefficient cleaning of the etching system caused by excessive reflected power; The technical content of the present invention will be described in detail with embodiments and drawings.

首先請參閱圖1所示，係為本發明一感應耦合電漿蝕刻系統10的系統架構圖，該感應耦合電漿蝕刻系統10係包含有一真空腔室11、一耦合線圈12、一基座13及一製程控制器14；其中該製程控制器係依照該真空腔室11的目前製程進行對應控制，該耦合線圈12係透過本發明的一切換式匹配裝置30耦接至一第一射頻電源供應器20，該基座13係耦接一第二射頻電源供應器40；其中該製程控制器係控制該第一及第二射頻電源供應單元20、40輸出對應的射頻電源，並控制該切換式匹配裝置30的切換。該第一射頻電源供應器係提供一蝕刻用射頻電源及一清潔用射頻電源，該蝕刻用射頻電源功率與清潔用射頻電源功率不同。本發明的感應耦合電漿蝕刻系統10可為8吋晶圓使用的一感應耦合電漿離子蝕刻系統(Inductively Coupled Plasma Reactive Ion Etching System；ICP-RIE system)或金屬蝕刻去耦電漿源設備(Metal Etch decoupled plasma source; Metal Etch DPS)。First, please refer to FIG. 1, which is a system architecture diagram of an inductively coupled plasma etching system 10 of the present invention. The inductively coupled plasma etching system 10 includes a vacuum chamber 11, a coupling coil 12, and a base 13 And a process controller 14; wherein the process controller performs corresponding control according to the current process of the vacuum chamber 11, and the coupling coil 12 is coupled to a first RF power supply through a switching matching device 30 of the present invention 20, the base 13 is coupled to a second RF power supply 40; wherein the process controller controls the first and second RF power supply units 20, 40 to output the corresponding RF power, and controls the switching type Switching of the matching device 30. The first RF power supply provides an RF power source for etching and a RF power source for cleaning. The power of the RF power source for etching is different from the power of the RF power source for cleaning. The inductively coupled plasma etching system 10 of the present invention may be an Inductively Coupled Plasma Reactive Ion Etching System (ICP-RIE system) or metal etching decoupling plasma source equipment used for 8-inch wafers ( Metal Etch decoupled plasma source; Metal Etch DPS).

請配合參閱圖2所示，本發明之該切換式匹配裝置30係包含有一射頻電源輸入埠301、一射頻電源輸出埠302、一匹配網路31及一切換單元(SW1~SW3)；其中該切換單元(SW1~SW3)係耦接於該射頻電源輸入埠301與該匹配網路31之間、於該匹配網路31與該射頻電源輸出埠302之間，以及於該射頻電源輸入埠301與該射頻電源輸出埠302之間，以將該射頻電源輸入埠301透過至該匹配網路31輸出至該射頻電源輸出埠302，或直接輸出至該射頻電源輸出埠302，其中該匹配網路31的輸出阻抗係與蝕刻系統10在清潔模式下的負載相匹配。當感應耦合電漿蝕刻系統10於蝕刻模式下，該切換單元(SW1~SW3)切換使該射頻電源輸入埠301耦接至該射頻電源輸出埠302；當感應耦合電漿蝕刻系統10於清潔模式下，該切換單元(SW1~SW3)切換使該射頻電源輸入埠301透過該匹配網路31耦接至該射頻電源輸出埠302。Please refer to FIG. 2, the switching matching device 30 of the present invention includes an RF power input port 301, an RF power output port 302, a matching network 31 and a switching unit (SW1~SW3); wherein the The switching units (SW1~SW3) are coupled between the RF power input port 301 and the matching network 31, between the matching network 31 and the RF power output port 302, and at the RF power input port 301 And the RF power output port 302 to output the RF power input port 301 to the RF power output port 302 through the matching network 31 or directly to the RF power output port 302, wherein the matching network The output impedance of 31 matches the load of the etching system 10 in the cleaning mode. When the inductively coupled plasma etching system 10 is in the etching mode, the switching unit (SW1~SW3) switches the RF power input port 301 to the RF power output port 302; when the inductively coupled plasma etching system 10 is in the cleaning mode Next, the switching units (SW1~SW3) switch so that the RF power input port 301 is coupled to the RF power output port 302 through the matching network 31.

於本實施例中，該切換單元係包含有第一至第三切換開關SW1～SW3，其中該第一切換開關SW1係與串接於該射頻電源輸入埠301與該匹配網路31之間，而該第二切換開關SW2則是串接於該匹配網路31與該射頻電源輸出埠302之間，該第三切換開關SW3則是串接於該射頻電源輸入埠301與該射頻電源輸出埠302之間。In this embodiment, the switch unit includes first to third switch SW1 ~ SW3, wherein the first switch SW1 is connected in series between the RF power input port 301 and the matching network 31, The second switch SW2 is connected in series between the matching network 31 and the RF power output port 302, and the third switch SW3 is connected in series between the RF power input port 301 and the RF power output port Between 302.

當感應耦合電漿蝕刻系統10於蝕刻模式下，該切換單元的第一及第二切換開關SW1、SW2係關閉斷開，使該匹配網路31不與該第一射頻電源供應器20及該感應線圈12耦接；同時，該切換單元的第三切換開關SW3導通閉合，使該射頻電源輸入埠301與該射頻電源輸出埠302耦接，將該第一射頻電源供應器20的蝕刻用射頻電源傳送至該感應線圈12，以於該真空腔室11內激發電漿，進行蝕刻製程。When the inductively coupled plasma etching system 10 is in the etching mode, the first and second switching switches SW1 and SW2 of the switching unit are turned off, so that the matching network 31 is not in contact with the first RF power supply 20 and the The induction coil 12 is coupled; meanwhile, the third switch SW3 of the switching unit is turned on and closed, so that the RF power input port 301 and the RF power output port 302 are coupled, and the first RF power supply 20 is etched with radio frequency The power is transmitted to the induction coil 12 to excite the plasma in the vacuum chamber 11 to perform the etching process.

當感應耦合電漿蝕刻系統10於清潔模式下，該切換單元的第三切換開關SW3係關閉斷開，使該射頻電源輸入埠301與該射頻電源輸出埠302不再耦接；同時，該切換單元的第一及第二切換開關SW1、SW2係導通閉合，使該匹配網路31與該第一射頻電源供應器20及該感應線圈12耦接，將該第一射頻電源供應器20的清潔用射頻電源傳送至該感應線圈12，以於該真空腔室11內激發電漿，進行清潔製程。When the inductively coupled plasma etching system 10 is in the cleaning mode, the third switch SW3 of the switching unit is turned off, so that the RF power input port 301 and the RF power output port 302 are no longer coupled; meanwhile, the switching The first and second switching switches SW1 and SW2 of the unit are turned on and off, so that the matching network 31 is coupled with the first RF power supply 20 and the induction coil 12 to clean the first RF power supply 20 The RF power is transmitted to the induction coil 12 to excite the plasma in the vacuum chamber 11 to perform the cleaning process.

再請參閱圖3所示，該匹配網路31係包含一固定阻抗元件及一可變阻抗元件；於本實施例中，該可變阻抗元件係為一第一可變電容器C1，而該固定阻抗元件係包含有一第一電感器L1、一第二電感器L2、一第二電容器C2及一第三電容器C3，並構成一「Π」形網路。再請配合參閱圖4示，為圖3匹配網路的等效電路，其中等效電感值為XL (nH)，又假設該蝕刻系統10在清潔模式下的負載值以精密的高頻感測器量測後獲得負載阻抗為a+jb，故可調整該第一可調電器C1的電容值，使該匹配網路31中的等效電容值為XC (pF)，即可將匹配網路的原輸出阻抗50+j0調整與感應耦合電漿蝕刻系統10在清潔模式下的負載阻抗a+jb相同，完成阻抗匹配，如圖5所示。3 again, the matching network 31 includes a fixed impedance element and a variable impedance element; in this embodiment, the variable impedance element is a first variable capacitor C1, and the fixed The impedance element includes a first inductor L1, a second inductor L2, a second capacitor C2 and a third capacitor C3, and forms a "Π" shaped network. Please also refer to FIG. 4 for the equivalent circuit of the matching network in FIG. 3, where the equivalent inductance value is X L (nH), and it is assumed that the load value of the etching system 10 in the cleaning mode is sensitive to high frequency After the measurement, the load impedance is obtained as a+jb, so the capacitance value of the first adjustable electrical device C1 can be adjusted so that the equivalent capacitance value in the matching network 31 is X C (pF). The original output impedance of the network 50+j0 is adjusted to be the same as the load impedance a+jb of the inductively coupled plasma etching system 10 in the cleaning mode to complete impedance matching, as shown in FIG. 5.

再如下表所示，以同樣8吋晶元廠用的金屬蝕刻去耦電漿源設備(Metal Etch decoupled plasma source; Metal Etch DPS)進行反射功率測試，由於本發明的第一射頻電源供應器20係透過一切換式匹配裝置30耦接至該感應線圈12，故於進行該真空腔室11清潔時，對三組不同的負載阻抗分別進行測試：

Figure 107117340-A0304-0001
As shown in the following table, the reflected power test was performed with the same metal etch decoupled plasma source (Metal Etch DPS) equipment used in the 8-inch wafer factory. Since the first RF power supply 20 of the present invention It is coupled to the induction coil 12 through a switching matching device 30, so when cleaning the vacuum chamber 11, three different sets of load impedances are tested:
Figure 107117340-A0304-0001

由上表測試結果可知，由於該匹配網路31的輸出阻抗與該感應耦合電漿蝕刻系統10在清潔模式下的負載相匹配，故此時輸出至該耦合線圈12的射頻電源之反射功率得有效被降低，電壓駐波比也都接近理想值1；因此，本發明的感應耦合電漿蝕刻系統10可於清潔模式下，將大部份的射頻電源轉移至真空腔室11，而有效地提高該真空腔室11的清潔效率。It can be seen from the test results in the above table that since the output impedance of the matching network 31 matches the load of the inductively coupled plasma etching system 10 in the cleaning mode, the reflected power of the RF power output to the coupling coil 12 at this time is effective Is reduced, the voltage standing wave ratio is also close to the ideal value of 1; therefore, the inductively coupled plasma etching system 10 of the present invention can transfer most of the RF power to the vacuum chamber 11 in the cleaning mode, and effectively improve The cleaning efficiency of the vacuum chamber 11.

以上所述僅是本發明的實施例而已，並非對本發明做任何形式上的限制，雖然本發明已以實施例揭露如上，然而並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明技術方案的範圍內，當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本發明技術方案的內容，依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾，均仍屬於本發明技術方案的範圍內。The above is only an embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed in the above embodiment, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field belongs to, Within the scope of not departing from the technical solution of the present invention, when the technical contents disclosed above can be used to make some changes or modifications to equivalent embodiments of equivalent changes, but any content that does not depart from the technical solution of the present invention is based on the technical essence of the present invention Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.

10‧‧‧蝕刻系統11‧‧‧真空腔室12‧‧‧耦合線圈13‧‧‧基座14‧‧‧製程控制器20‧‧‧第一射頻電源供應器30‧‧‧切換式匹配裝置301‧‧‧射頻電源輸入埠302‧‧‧射頻電源輸出埠31‧‧‧匹配網路40‧‧‧第二射頻電源供應器50‧‧‧DPS金屬蝕刻設備51‧‧‧真空腔室52‧‧‧耦合線圈53‧‧‧基座54‧‧‧製程控制器55‧‧‧第一射頻電源供應器56‧‧‧第二射頻電源供應器10‧‧‧Etching system 11‧‧‧Vacuum chamber 12‧‧‧Coupling coil 13‧‧‧Base 14‧‧‧Process controller 20‧‧‧First RF power supply 30‧‧‧Switching matching device 301‧‧‧RF power input port 302‧‧‧RF power output port 31‧‧‧matching network 40‧‧‧second RF power supply 50‧‧‧DPS metal etching equipment 51‧‧‧vacuum chamber 52‧ ‧‧Coupling coil 53‧‧‧Base 54‧‧‧Process controller 55‧‧‧First RF power supply 56‧‧‧second RF power supply

圖1：本發明一感應耦合電漿蝕刻系統的系統架構圖。 圖2：圖1中切換式匹配裝置與製程控制器的功能方塊圖。 圖3：本發明切換式匹配裝置的電路圖。 圖4：本發明感應耦合電漿蝕刻系統於清潔模式下之阻抗匹配網路圖。 圖5：圖3的史密斯阻抗匹配圖。 圖6：既有一DPS金屬蝕刻設備圖的系統架構圖。Figure 1: System architecture diagram of an inductively coupled plasma etching system of the present invention. Figure 2: The functional block diagram of the switching matching device and the process controller in Figure 1. Figure 3: Circuit diagram of the switching matching device of the present invention. Figure 4: The impedance matching network diagram of the inductively coupled plasma etching system of the present invention in the cleaning mode. Figure 5: Smith impedance matching diagram of Figure 3. Figure 6: System architecture diagram with a DPS metal etching equipment diagram.

10‧‧‧蝕刻系統 10‧‧‧Etching system

11‧‧‧真空腔室 11‧‧‧Vacuum chamber

12‧‧‧耦合線圈 12‧‧‧Coupling coil

14‧‧‧製程控制器 14‧‧‧Process controller

20‧‧‧第一射頻電源供應器 20‧‧‧The first RF power supply

30‧‧‧切換式匹配裝置 30‧‧‧Switching matching device

301‧‧‧射頻電源輸入埠 301‧‧‧RF power input port

302‧‧‧射頻電源輸出埠 302‧‧‧RF power output port

31‧‧‧匹配網路 31‧‧‧ matching network

Claims (10)

一種感應耦合電漿蝕刻系統，包括： 一耦合線圈； 一切換式匹配裝置，係耦接至該耦合線圈，且具有一匹配網路；以及 一第一射頻電源供應器，係透過該切換式匹配裝置耦接至該耦合線圈；其中，該第一射頻電源供應器係提供一蝕刻用射頻電源及一清潔用射頻電源，該蝕刻用射頻電源功率與清潔用射頻電源功率不同；其中： 當該第一射頻電源供應器輸出該蝕刻用射頻電源時，該切換式匹配裝置係切換以直接將該第一射頻電源供應器耦接至該耦合線圈； 當該第一射頻電源供應器輸出該清潔用射頻電源時，該切換式匹配裝置係切換以透過該匹配網路將該清潔用射頻電源傳送至該耦合線圈；其中該匹配網路的輸出阻抗係與該感應耦合電漿蝕刻系統於一清潔模式下的負載相匹配。An inductively coupled plasma etching system includes: a coupling coil; a switching matching device coupled to the coupling coil and having a matching network; and a first RF power supply through which the switching matching is performed The device is coupled to the coupling coil; wherein, the first RF power supply provides an RF power for etching and a RF power for cleaning, the power of the RF power for etching is different from the power of the RF power for cleaning; wherein: when the first When an RF power supply outputs the RF power for etching, the switching matching device switches to directly couple the first RF power supply to the coupling coil; when the first RF power supply outputs the cleaning RF When power is supplied, the switching matching device switches to transmit the cleaning RF power to the coupling coil through the matching network; wherein the output impedance of the matching network and the inductively coupled plasma etching system are in a cleaning mode Match the load. 如請求項1所述之感應耦合電漿蝕刻系統，該切換式匹配裝置係進一步包含： 一射頻電源輸入埠，係供該第一射頻電源供應器耦接； 一射頻電源輸出埠，係供該耦合線圈耦接；以及 一切換單元，係包含有： 一第一切換開關，係耦接於該射頻電源輸入埠與該匹配網路之間； 一第二切換開關，係耦接於該匹配網路與該射頻電源輸出埠之間；以及 一第三切換開關，係耦接於該射頻電源輸入埠與該射頻電源輸出埠之間。According to the inductively coupled plasma etching system of claim 1, the switchable matching device further comprises: a radio frequency power input port for coupling the first radio frequency power supply; a radio frequency power output port for the A coupling coil coupling; and a switching unit including: a first switching switch coupled between the RF power input port and the matching network; a second switching switch coupled to the matching network Between the circuit and the RF power output port; and a third switch, which is coupled between the RF power input port and the RF power output port. 如請求項2所述之感應耦合電漿蝕刻系統，係進一步包括一製程控制器，該製程控制器係控制該第一射頻電源供應器選擇地輸出該蝕刻用射頻電源及清潔用射頻電源，其中： 當該製程控制器控制該第一射頻電源供應器輸出該蝕刻用射頻電源時，同時控制該切換單元中該第一及第二切換開關關閉斷開，並控制該第三切換開關導通閉合； 當該製程控制器控制該第一射頻電源供應器輸出該清潔用射頻電源時，同時控制該切換單元中的該第一及第二切換開關導通閉合，並控制該第三切換開關關閉斷開。The inductively coupled plasma etching system according to claim 2, further comprising a process controller which controls the first RF power supply to selectively output the RF power for etching and the RF power for cleaning, wherein : When the process controller controls the first RF power supply to output the RF power for etching, it also controls the first and second switching switches in the switching unit to turn off and off, and controls the third switching switch to turn on and off; When the process controller controls the first radio frequency power supply to output the cleaning radio frequency power, the first and second switching switches in the switching unit are simultaneously turned on and off, and the third switching switch is turned off and off. 如請求項3所述之感應耦合電漿蝕刻系統，該匹配網路係包含一固定阻抗元件及一可變阻抗元件。The inductively coupled plasma etching system according to claim 3, the matching network includes a fixed impedance element and a variable impedance element. 如請求項4所述之感應耦合電漿蝕刻系統，其中： 該可變阻抗元件係為一第一可變電容器；以及 該固定阻抗元件係包含有一第一電感器、一第二電感器、一第二電容器及一第三電容器，並與該第一可變電容器構成一「Π」形網路。The inductively coupled plasma etching system according to claim 4, wherein: the variable impedance element is a first variable capacitor; and the fixed impedance element includes a first inductor, a second inductor, a The second capacitor and a third capacitor form a "Π" network with the first variable capacitor. 如請求項1至5中任一項所述之感應耦合電漿蝕刻系統，該第一射頻電源供應器係為一變頻式射頻電源供應器。According to the inductively coupled plasma etching system of any one of claims 1 to 5, the first radio frequency power supply is a frequency conversion radio frequency power supply. 如請求項4所述之感應耦合電漿蝕刻系統，係進一步包括： 一基座；以及 一第二射頻電源供應器，係耦接至該基座，以提供一射頻電源予該基座。The inductively coupled plasma etching system according to claim 4, further comprising: a base; and a second radio frequency power supply coupled to the base to provide a radio frequency power to the base. 一種感應耦合電漿蝕刻系統的切換式匹配裝置，包括： 一射頻電源輸入埠； 一射頻電源輸出埠； 一匹配網路，其輸出阻抗係與蝕刻系統的一清潔模式下的負載相匹配； 一切換單元，係耦接於該射頻電源輸入埠與該匹配網路之間、於該匹配網路與該射頻電源輸出埠之間，以及於該射頻電源輸入埠與該射頻電源輸出埠之間。A switching matching device for an inductively coupled plasma etching system includes: a radio frequency power input port; a radio frequency power output port; a matching network whose output impedance matches the load in a cleaning mode of the etching system; The switching unit is coupled between the RF power input port and the matching network, between the matching network and the RF power output port, and between the RF power input port and the RF power output port. 如請求項8所述之切換式匹配裝置，該切換單元係包含有： 一第一切換開關，係耦接於該射頻電源輸入埠與該匹配網路之間； 一第二切換開關，係耦接於該匹配網路與該射頻電源輸出埠之間；以及 一第三切換開關，係耦接於該射頻電源輸入埠與該射頻電源輸出埠之間。According to the switching matching device of claim 8, the switching unit includes: a first switching switch coupled between the RF power input port and the matching network; a second switching switch coupled It is connected between the matching network and the RF power output port; and a third switch is coupled between the RF power input port and the RF power output port. 如請求項8所述之切換式匹配裝置，該匹配網路係包含一固定阻抗元件及一可變阻抗元件；其中： 該可變阻抗元件係為一第一可變電容器；以及 該固定阻抗元件係包含有一第一電感器、一第二電感器、一第二電容器及一第三電容器，並與該第一可變電容器構成一「Π」形網路。The switching matching device according to claim 8, the matching network includes a fixed impedance element and a variable impedance element; wherein: the variable impedance element is a first variable capacitor; and the fixed impedance element It includes a first inductor, a second inductor, a second capacitor and a third capacitor, and forms a "Π" network with the first variable capacitor.
TW107117340A 2018-05-22 2018-05-22 Inductively coupled plasma (icp) etching system and switching matchbox thereof TWI697261B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW107117340A TWI697261B (en) 2018-05-22 2018-05-22 Inductively coupled plasma (icp) etching system and switching matchbox thereof
CN201910412317.9A CN110517942B (en) 2018-05-22 2019-05-17 Inductively coupled plasma etching system and switching type matching device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107117340A TWI697261B (en) 2018-05-22 2018-05-22 Inductively coupled plasma (icp) etching system and switching matchbox thereof

Publications (2)

Publication Number Publication Date
TW202005480A TW202005480A (en) 2020-01-16
TWI697261B true TWI697261B (en) 2020-06-21

Family

ID=68622429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107117340A TWI697261B (en) 2018-05-22 2018-05-22 Inductively coupled plasma (icp) etching system and switching matchbox thereof

Country Status (2)

Country Link
CN (1) CN110517942B (en)
TW (1) TWI697261B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465051B1 (en) * 1994-04-28 2002-10-15 Applied Materials, Inc. Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling
TW200908139A (en) * 2007-06-26 2009-02-16 Intevac Inc Hybrid etch chamber with decoupled plasma controls
TW201029523A (en) * 2008-10-21 2010-08-01 Applied Materials Inc Plasma source for chamber cleaning and process
TWI346359B (en) * 2006-03-21 2011-08-01 Dms Co Ltd Hybrid plasma reactor
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
TWI362142B (en) * 2004-02-25 2012-04-11 Jusung Eng Co Ltd Plasma antenna
TWM538301U (en) * 2016-11-03 2017-03-11 Wisdom Power Int Corp Ltd Radio-frequency plasma power supply system for load of variable impedance and automatic matcher thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1942045A (en) * 2005-09-30 2007-04-04 联华电子股份有限公司 Stabilizing system of plasma process
US9408288B2 (en) * 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465051B1 (en) * 1994-04-28 2002-10-15 Applied Materials, Inc. Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling
TWI362142B (en) * 2004-02-25 2012-04-11 Jusung Eng Co Ltd Plasma antenna
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
TWI346359B (en) * 2006-03-21 2011-08-01 Dms Co Ltd Hybrid plasma reactor
TW200908139A (en) * 2007-06-26 2009-02-16 Intevac Inc Hybrid etch chamber with decoupled plasma controls
TW201029523A (en) * 2008-10-21 2010-08-01 Applied Materials Inc Plasma source for chamber cleaning and process
TWM538301U (en) * 2016-11-03 2017-03-11 Wisdom Power Int Corp Ltd Radio-frequency plasma power supply system for load of variable impedance and automatic matcher thereof

Also Published As

Publication number Publication date
CN110517942B (en) 2021-09-21
CN110517942A (en) 2019-11-29
TW202005480A (en) 2020-01-16

Similar Documents

Publication Publication Date Title
TWI552223B (en) Plasma processing device
US9515633B1 (en) Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers
TWI797307B (en) Plasma generating method
TW201719751A (en) Method for impedance matching of plasma processing device
JP4824438B2 (en) Vacuum plasma generator
TWI747997B (en) Drive circuit and impedance integration device
WO2016110027A1 (en) Impedance matching method and device for pulse radio frequency power supply
US7265528B2 (en) High-frequency power apparatus
TW201526716A (en) Plasma processing device
JPH08236412A (en) Plasma chamber with fixed rf matching circuit
WO2022078336A1 (en) Impedance matching method, impedance matcher and semiconductor process device
JP2021527379A (en) Direct-drive RF circuit for board processing system
TW201732864A (en) Apparatus for implementing impedance matching and power distribution, and semiconductor processing device
TW202104629A (en) Voltage waveform generator for plasma processing apparatuses
TWI697261B (en) Inductively coupled plasma (icp) etching system and switching matchbox thereof
US6879870B2 (en) Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber
TW201737393A (en) Plasma processing method
CN209218441U (en) A kind of inductively coupled plasma body processor
KR20230002729A (en) Impedance matching circuit and plasma supply system and method of operation
TWI716831B (en) Switchable matching network and inductively coupled plasma processor
CN209057396U (en) A kind of inductively coupled plasma body processor
JP7208702B2 (en) high frequency power supply
TW202407750A (en) Inductively coupled plasma device for exhaust gas treatment
KR20230100087A (en) Plasma control apparatus and plasma processing system
JPH0878994A (en) Impedance matching circuit