CN101034083B - Manufacturing method of sonic surface wave gas sensor - Google Patents
Manufacturing method of sonic surface wave gas sensor Download PDFInfo
- Publication number
- CN101034083B CN101034083B CN2007100643330A CN200710064333A CN101034083B CN 101034083 B CN101034083 B CN 101034083B CN 2007100643330 A CN2007100643330 A CN 2007100643330A CN 200710064333 A CN200710064333 A CN 200710064333A CN 101034083 B CN101034083 B CN 101034083B
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- Prior art keywords
- active metal
- surface wave
- film
- grow
- self assembly
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000035945 sensitivity Effects 0.000 claims abstract description 20
- 239000012528 membrane Substances 0.000 claims abstract description 16
- 238000001338 self-assembly Methods 0.000 claims abstract description 15
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 6
- 239000003513 alkali Substances 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000002585 base Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052718 tin Inorganic materials 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000010897 surface acoustic wave method Methods 0.000 description 13
- 239000010931 gold Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
This invention discloses a manufacturing method of acoustic surface wave gassy sensor which belongs to sensor manufacturing engineering. This method is coating a layer active metal ( Al, Mg, Zn, Sn) on gassy sensor figure that will grow sensitivity film, then through photoengraving and wet method sculpture to make the aurum ( Ag or Pt) membrane that demand self assembly sensitivity film expose. the transducer IDT is covered up by active metal, at last carry out monomolecular self assembly, then immerge device after self assembly to in common use alkali or acid corrosion solution to wipe off active metal. This invention supply method of accurately self assembly sensitivity membrane on aurum (or Pt) membrane surface in sound propagation path, and shield rest aurum (Ag or Pt) membrane. At the same time the method advances the size precision of self assembly sensitivity membrane. So greatly advance precision of acoustic surface wave gassy sensor.
Description
Technical field
The invention belongs to the manufacturing technology of sensor, particularly the manufacture method of a kind of sonic surface wave gas sensors of SAW (Surface Acoustic Wave) device.
Background technology
Surface acoustic wave (SAW) is a kind of sound wave of propagating along elastic matrix surface, because surface acoustic wave carries out transducing and propagation at dielectric surface, so the injection of information, extraction, processing all can realize easily.Surface acoustic wave sensor was come out the seventies in last century, and it is the up-and-coming youngster of sensor.The ultimate principle of sonic surface wave gas sensors is the variation that causes surface acoustic wave sensor speed by the absorption that the sensitive membrane that the SAW (Surface Acoustic Wave) device surface is covered is treated side gas, thereby change the oscillation frequency of SAW oscillator, realize monitoring and measurement gas with this.Compare with the sensor of other types, sonic surface wave gas sensors has a lot of excellent characteristic, have that volume is little, in light weight, precision is high, resolution is high, antijamming capability is strong, characteristics such as highly sensitive, valid analysing range good linearity, can utilize the plane manufacture craft in the integrated circuit, can realize microminiaturization and integrated, be suitable for producing low-costly and in high volume.
The problem that exists:
Making a well behaved SAW (Surface Acoustic Wave) device, is a very meticulous job.When making sonic surface wave gas sensors, need be on the acoustic propagation path deposit one deck selective absorbing film, the area of absorbing film is decided by the size in transducer aperture and the center distance of two transducers.The width of absorbing film is more than or equal to the aperture of output transducer.In order to improve the stability of sensor, the quality that absorbing film produces on the acoustic propagation path loads more little, and then the sonic surface wave gas sensors precision is high more.Based on this, go up the chemisorbed film that self assembly one deck has certain molecule distinguishability at some metal (as Au, Ag or Pt film), caused that people pay close attention to greatly.But self assembly sensitive membrane on Au or Pt film selectively, and cover the difficulty that other golden transducer produces.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of sonic surface wave gas sensors.It is characterized in that: this method is for to want (the Al of evaporation one deck active metal on the gas sensor figure of grow sensitivity film, Mg, Zn, Sn etc.), pass through photoetching and wet etching again, to need gold (Ag or the Pt) film of self assembly sensitive membrane to expose out, transducer IDT is covered by the active metal, carry out the deposition (depositional mode can be physical deposition such as spraying process also can be chemogenic deposit such as molecule self assembly etc.) of selective absorbing film then, again device is immersed in general alkali or the acid etching solution at last and remove the active metal, the part of covering is exposed out.
Concrete step of preparation process:
1. evaporation one deck 10-50nm active metal layer 4 on the good gas sensor figure of the photoetching of piezoelectric base unit 1 with electron beam or thermal evaporation method, the gas sensor figure that wherein photoetching is good comprises the metallic film 3 that is used for grow sensitivity film on IDT interdigital transducer 2 and the travel path;
2. photoetching and wet etching active metal layer 4 expose the metallic film 3 on the acoustic propagation path, and IDT interdigital transducer 2 parts are covered up by active metal layer 4;
3. with physics or chemical method grow sensitivity film 5 on exposed sensitive membrane 3;
4. the product with step 3 immerses removal active metal layer in general alkali or the acid etching solution, with not needing the position 2 of grow sensitivity film to expose out again, promptly finishes the making of sonic surface wave gas sensors.
Described active metal layer is Al, Mg, Zn or Sn.
The metallic film 3 of described grow sensitivity film is Au, Ag or Pt.
The metallic film of described making IDT interdigital transducer 2 is Au, Ag or Pt.
Described sensitive membrane is high molecular polymer or metal or metal oxide.
The invention has the beneficial effects as follows provides accurately the only surface self assembly of gold (or Pt) film on acoustic propagation path sensitive membrane, and protects the method for other gold (Ag or Pt) film, has improved the size accuracy of self assembly sensitive membrane.Thereby improved the precision of sonic surface wave gas sensors greatly.
Description of drawings
Fig. 1 is the schematic flow sheet of the surface acoustic wave sensor sensitive membrane of selectively growing among the present invention.
Embodiment
The present invention provides a kind of manufacture method of sonic surface wave gas sensors.Specifically step of preparation process is as shown in Figure 1:
1. evaporation one deck 10-50nm active metal layer 4 (Al on the good gas sensor figure of the photoetching of piezoelectric base unit 1 with electron beam or thermal evaporation method, Mg, Zn, Sn etc.) (as shown in Figure 1a), the gas sensor figure that wherein photoetching is good comprises the metallic film 3 that is used for grow sensitivity film on IDT interdigital transducer 2 and the travel path;
2. photoetching and wet etching active metal layer 4 expose the metallic film 3 (Au, Ag or Pt) of the grow sensitivity film on the acoustic propagation path, and IDT interdigital transducer 2 parts (Au, Ag or Pt) are all covered up (shown in Fig. 1 b) by active metal layer 4 (as Al);
3. with physics (as spraying process) or chemical method (as the molecule self assembly) grow sensitivity film 5 (shown in Fig. 1 c) on the metallic film 3 of grow sensitivity film;
4. the product of step 3 is put into general alkali or acid etching solution and removed metal A l, will not need the position of grow sensitivity film to expose out again, promptly finish the making (shown in Fig. 1 d) of sonic surface wave gas sensors.
Claims (5)
1. the manufacture method of a sonic surface wave gas sensors, it is characterized in that: this method is for to want evaporation one deck active metal on the gas sensor figure of grow sensitivity film, pass through photoetching and wet etching again, to need the position of self assembly sensitive membrane to expose out, the IDT interdigital transducer is covered by the active metal, carry out the unimolecule self assembly then, again that self assembly is good device immerses the active metal that removal is covered in general alkali or the acid etching solution;
Concrete step of preparation process:
1) evaporation one deck 10-50nm active metal layer (4) on the good gas sensor figure of the photoetching of piezoelectric base unit (1) with electron beam or thermal evaporation method, the gas sensor figure that wherein photoetching is good comprises the metallic film (3) that is used for grow sensitivity film on IDT interdigital transducer (2) and the travel path;
2) photoetching and wet etching active metal layer (4) expose the metallic film that is used for grow sensitivity film (3) on the acoustic propagation path, and IDT interdigital transducer (2) part is all covered up by active metal layer (4);
3) go up grow sensitivity film (5) with physics or chemical method at the metallic film (3) of grow sensitivity film;
4) product of step 3) is put into general alkali or acid etching solution and removed the active metal layer,, promptly finish the making of sonic surface wave gas sensors not needing the position of long sensitive membrane to expose out again.
2. according to the manufacture method of the described sonic surface wave gas sensors of claim 1, it is characterized in that: described active metal layer is a kind of among Al, Mg, Zn, the Sn.
3. according to the manufacture method of the described sonic surface wave gas sensors of claim 1, it is characterized in that: the metallic film of described grow sensitivity film (3) is Au, Ag or Pt.
4. according to the manufacture method of the described sonic surface wave gas sensors of claim 1, it is characterized in that: the metallic film of described IDT interdigital transducer (2) is Au, Ag or Pt.
5. according to the manufacture method of the described sonic surface wave gas sensors of claim 1, it is characterized in that: described sensitive membrane is high molecular polymer or metal or metal oxide.
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CN2007100643330A CN101034083B (en) | 2007-03-12 | 2007-03-12 | Manufacturing method of sonic surface wave gas sensor |
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CN101034083B true CN101034083B (en) | 2011-01-26 |
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Families Citing this family (8)
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CN101382522B (en) * | 2008-08-26 | 2011-01-26 | 北京中科飞鸿科技有限公司 | Method for producing surface acoustic wave sensor chip for gas detection |
DE102008052437A1 (en) | 2008-10-21 | 2010-04-29 | Siemens Aktiengesellschaft | Device and method for detecting a substance with the aid of a thin-film resonator with an insulating layer |
CN102376890A (en) * | 2010-08-06 | 2012-03-14 | 中国科学院微电子研究所 | Method for manufacturing high-selectivity semiconductor film |
CN102376889B (en) * | 2010-08-06 | 2013-08-07 | 中国科学院微电子研究所 | Method for manufacturing semiconductor film |
CN102680572A (en) * | 2011-03-16 | 2012-09-19 | 中国科学院微电子研究所 | Method for manufacturing sensitive membrane of surface acoustic wave sensor |
CN102778503A (en) * | 2011-05-12 | 2012-11-14 | 中国科学院微电子研究所 | Surface acoustic wave gas sensor and manufacturing method thereof |
DE102011076132B4 (en) * | 2011-05-19 | 2023-03-23 | Endress+Hauser Flow Deutschland Ag | Device and method for determining properties of a medium |
CN102816995B (en) * | 2012-07-30 | 2013-12-25 | 中国科学院微电子研究所 | Preparation method of in-situ reduction doped sensitive film applied to gas sensor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1484378A (en) * | 2002-07-31 | 2004-03-24 | ���µ�����ҵ��ʽ���� | Surface acoustic element and mfg method thereor |
CN1645744A (en) * | 2004-12-07 | 2005-07-27 | 清华大学 | Production for multi-layer thin-film structure of diamond sound surface wave device |
US7022288B1 (en) * | 2002-11-13 | 2006-04-04 | The United States Of America As Represented By The Secretary Of The Navy | Chemical detection sensor system |
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CN1484378A (en) * | 2002-07-31 | 2004-03-24 | ���µ�����ҵ��ʽ���� | Surface acoustic element and mfg method thereor |
US7022288B1 (en) * | 2002-11-13 | 2006-04-04 | The United States Of America As Represented By The Secretary Of The Navy | Chemical detection sensor system |
CN1645744A (en) * | 2004-12-07 | 2005-07-27 | 清华大学 | Production for multi-layer thin-film structure of diamond sound surface wave device |
Non-Patent Citations (3)
Title |
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JP特开平9-289430A 1997.11.04 |
施云波.基于MEMS工艺的声表面波化学毒剂传感器.传感器技术24 9.2005,24(9),43-45. |
施云波.基于MEMS工艺的声表面波化学毒剂传感器.传感器技术24 9.2005,24(9),43-45. * |
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