CN102376890A - Method for manufacturing high-selectivity semiconductor film - Google Patents
Method for manufacturing high-selectivity semiconductor film Download PDFInfo
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- CN102376890A CN102376890A CN2010102477924A CN201010247792A CN102376890A CN 102376890 A CN102376890 A CN 102376890A CN 2010102477924 A CN2010102477924 A CN 2010102477924A CN 201010247792 A CN201010247792 A CN 201010247792A CN 102376890 A CN102376890 A CN 102376890A
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- film
- titanium
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- selectivity
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title abstract 2
- AFEKSWFLEQJYBG-UHFFFAOYSA-N nickel oxalonitrile titanium Chemical compound [Ni].N#CC#N.[Ti] AFEKSWFLEQJYBG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000001338 self-assembly Methods 0.000 claims abstract description 9
- BJMBNXMMZRCLFY-UHFFFAOYSA-N [N].[N].CN(C)C=O Chemical compound [N].[N].CN(C)C=O BJMBNXMMZRCLFY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- SAANWJOSHMCEKU-UHFFFAOYSA-N N#CC#N.[Ni] Chemical compound N#CC#N.[Ni] SAANWJOSHMCEKU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 18
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- -1 titanium-nickel cyanide Chemical compound 0.000 abstract 2
- 238000010923 batch production Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 18
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a high-selectivity semiconductor film, which is to deposit a titanium-nickel cyanide film on the surface of a surface acoustic wave resonator or on the propagation path of a surface wave delay line by using the titanium-nickel cyanide as a sensitive film material and nitrogen-nitrogen dimethylformamide as a self-assembly solvent. The thickness of the titanium-cyanogen-nickel film is changed along with the frequency of the surface acoustic wave device, and the thickness range is between 50nm and 5000 nm. The invention adopts nitrogen-nitrogen dimethyl formamide as a self-assembly solvent, and the self-assembled sensitive film carries out heat treatment on NO2Has strong sensitivity and high selectivity. Meanwhile, the repeatability and the stability of the device are improved. In addition, the method has simple film forming mode and high film stability, and is very easy for batch production.
Description
Technical field
The present invention relates to the sensor production technical field, particularly a kind of manufacture method of high selectivity semiconductive thin film.
Background technology
Surface acoustic wave (SAW) is a kind of sound wave of propagating along elastic matrix surface, because surface acoustic wave carries out transducing and propagation at dielectric surface, so the injection of information, extraction, processing all can realize easily.Surface acoustic wave sensor was come out the seventies in last century, and it is the up-and-coming youngster of transducer.The basic principle of sonic surface wave gas sensors is the variation that causes surface acoustic wave sensor speed through the absorption that the surperficial sensitive membrane that is covered of SAW device is treated side gas; Thereby change the frequency of oscillation of SAW oscillator, realize monitoring and measurement gas with this.
Compare with the transducer of other types; Sonic surface wave gas sensors has a lot of excellent characteristic; Have that volume is little, in light weight, precision is high, resolution is high, antijamming capability is strong, characteristics such as highly sensitive, valid analysing range good linearity; Can utilize the plane manufacture craft in the integrated circuit, can realize microminiaturization and integrated, be suitable for producing low-costly and in high volume.
Sensitive membrane is the most direct responsive part of SAW gas sensor, and general different types of chemical gas need use the film of various different materials.The better selectivity sensitive thin film can only adsorb gas to be measured in mist, shield other gas.It is thus clear that the selective absorption to gas is the basic demand to sensitive thin film.Film has also determined the selectivity of SAW gas sensor to the selectivity of gas, and the selection of sensitive membrane has directly determined the quality of transducer.
Restrict surface acoustic wave NO at present
2The main bottleneck of gas sensor performance is exactly the preparation and the performance of gas sensitization film, and it is unsatisfactory to the sensitivity and the selectivity of gas to be mainly reflected in sensitive membrane, requires sensitive membrane to NO
2Gas has strong absorption, desorption characteristic, and will lack gas response time and turnaround time.Simultaneously, the depositional mode of sensitive membrane also needs to simplify.
Summary of the invention
The technical problem that (one) will solve
In view of this, main purpose of the present invention provides a kind of manufacture method of high selectivity semiconductive thin film.
(2) technical scheme
For achieving the above object; The invention provides a kind of manufacture method of high selectivity semiconductive thin film; This method is that employing titanium cyanogen nickel is the sensitive membrane material; Nitrogen-nitrogen dimethyl formamide is the self assembly solvent, on the propagation path of SAW resonator surface or surface wave delay line, adopts self-assembling method titanium deposition cyanogen nickel film.
In the such scheme, said titanium cyanogen nickel film thickness changes with the SAW device frequency.
In the such scheme, said titanium cyanogen nickel film thickness scope is between 50nm to 5000nm.
(3) beneficial effect
The invention has the beneficial effects as follows, adopt nitrogen-nitrogen dimethyl formamide as the self assembly solvent, the sensitive membrane of self assembly through heat treatment after to NO
2Have strong sensitiveness and high selectivity, simultaneously, improved the repeatable and stable of device.In addition, the method thin film-forming method is simple, and thin film stability is high, is highly susceptible to producing in batches.
Description of drawings
The surface acoustic wave NO that Fig. 1 makes for the present invention
2The sketch map of gas sensor sensitive membrane.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The invention provides a kind of manufacture method of high selectivity semiconductive thin film; This method is that employing titanium cyanogen nickel is the sensitive membrane material; Nitrogen-nitrogen dimethyl formamide is the self assembly solvent; On the propagation path of SAW resonator surface or surface wave delay line, adopt self-assembling method titanium deposition cyanogen nickel film.Wherein, titanium cyanogen nickel film thickness changes with the SAW device frequency, and thickness range is between 50nm to 5000nm.
Surface acoustic wave NO as shown in Figure 1, that Fig. 1 makes for the present invention
2The sketch map of gas sensor sensitive membrane.Wherein, 1 is SiO
2, LiNbO
3Or LiTaO
3Deng piezoelectric membrane, 2 is transducer membrane such as Al or Au, and 3 is titanium cyanogen nickel sensitive membrane, and the thickness scope is between 50nm-5000nm.
The present invention adopts nitrogen-nitrogen dimethyl formamide as the self assembly solvent, the sensitive membrane of self assembly through heat treatment after to NO
2Have strong sensitiveness and high selectivity, simultaneously, improved the repeatable and stable of device.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. the manufacture method of a high selectivity semiconductive thin film; This method is that employing titanium cyanogen nickel is the sensitive membrane material; Nitrogen-nitrogen dimethyl formamide is the self assembly solvent, on the propagation path of SAW resonator surface or surface wave delay line, adopts self-assembling method titanium deposition cyanogen nickel film.
2. the manufacture method of high selectivity semiconductive thin film according to claim 1 is characterized in that, said titanium cyanogen nickel film thickness changes with the SAW device frequency.
3. the manufacture method of high selectivity semiconductive thin film according to claim 1 is characterized in that, said titanium cyanogen nickel film thickness scope is between 50nm to 5000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102477924A CN102376890A (en) | 2010-08-06 | 2010-08-06 | Method for manufacturing high-selectivity semiconductor film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102477924A CN102376890A (en) | 2010-08-06 | 2010-08-06 | Method for manufacturing high-selectivity semiconductor film |
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| Publication Number | Publication Date |
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| CN102376890A true CN102376890A (en) | 2012-03-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102477924A Pending CN102376890A (en) | 2010-08-06 | 2010-08-06 | Method for manufacturing high-selectivity semiconductor film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124938A (en) * | 2014-07-18 | 2014-10-29 | 天津大学 | Resonator and resonant frequency regulate and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034083A (en) * | 2007-03-12 | 2007-09-12 | 清华大学 | Manufacturing method of sonic surface wave gas sensor |
| CN101507930A (en) * | 2009-03-27 | 2009-08-19 | 华南师范大学 | Metal phthalocyanine/carbon nano tube composite catalyst and its preparation method and lithium/thinly chloride battery using the catalyst |
| CN201348624Y (en) * | 2008-12-29 | 2009-11-18 | 南开大学 | Multi-channel surface acoustic wave chemical sensing device |
-
2010
- 2010-08-06 CN CN2010102477924A patent/CN102376890A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034083A (en) * | 2007-03-12 | 2007-09-12 | 清华大学 | Manufacturing method of sonic surface wave gas sensor |
| CN201348624Y (en) * | 2008-12-29 | 2009-11-18 | 南开大学 | Multi-channel surface acoustic wave chemical sensing device |
| CN101507930A (en) * | 2009-03-27 | 2009-08-19 | 华南师范大学 | Metal phthalocyanine/carbon nano tube composite catalyst and its preparation method and lithium/thinly chloride battery using the catalyst |
Non-Patent Citations (2)
| Title |
|---|
| 窦雁巍: "酞菁镍薄膜型NO2气体传感器的制备与性能研究", 《第十七届全国半导体物理学术会议论文集》, 20 August 2009 (2009-08-20), pages 217 - 219 * |
| 陈仕艳: "酞菁在分子材料器件方面的研究进展", 《自然科学进展》, vol. 14, no. 2, 28 February 2004 (2004-02-28), pages 125 - 130 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124938A (en) * | 2014-07-18 | 2014-10-29 | 天津大学 | Resonator and resonant frequency regulate and control method thereof |
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Application publication date: 20120314 |