CN101025967B - 利用纳米颗粒的光存储介质 - Google Patents
利用纳米颗粒的光存储介质 Download PDFInfo
- Publication number
- CN101025967B CN101025967B CN2007100059310A CN200710005931A CN101025967B CN 101025967 B CN101025967 B CN 101025967B CN 2007100059310 A CN2007100059310 A CN 2007100059310A CN 200710005931 A CN200710005931 A CN 200710005931A CN 101025967 B CN101025967 B CN 101025967B
- Authority
- CN
- China
- Prior art keywords
- nanoparticles
- layer
- optical storage
- storage medium
- size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003860 storage Methods 0.000 title claims abstract description 58
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 46
- 230000003287 optical effect Effects 0.000 title claims abstract description 42
- 239000003989 dielectric material Substances 0.000 claims abstract description 7
- 230000005284 excitation Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 description 29
- 230000001939 inductive effect Effects 0.000 description 8
- 238000013500 data storage Methods 0.000 description 5
- 239000002082 metal nanoparticle Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 239000013528 metallic particle Substances 0.000 description 4
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Optical Recording Or Reproduction (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06300160A EP1826758A1 (en) | 2006-02-24 | 2006-02-24 | Optical multilayer storage medium using nanoparticles |
| EP06300160.6 | 2006-02-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101025967A CN101025967A (zh) | 2007-08-29 |
| CN101025967B true CN101025967B (zh) | 2010-10-20 |
Family
ID=36609411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100059310A Expired - Fee Related CN101025967B (zh) | 2006-02-24 | 2007-02-15 | 利用纳米颗粒的光存储介质 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7781042B2 (enExample) |
| EP (2) | EP1826758A1 (enExample) |
| JP (1) | JP4569583B2 (enExample) |
| CN (1) | CN101025967B (enExample) |
| DE (1) | DE602007010681D1 (enExample) |
| TW (1) | TWI398865B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114708886B (zh) * | 2022-04-25 | 2024-01-19 | 南京邮电大学 | 一种热敏可擦写等离子激元纳米生物存储器及其制备方法 |
| KR102734138B1 (ko) * | 2023-04-12 | 2024-11-25 | 대구가톨릭대학교산학협력단 | 투과된 빛의 강도를 증폭시킬 수 있는 광학 저장장치 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1685401A (zh) * | 2002-09-26 | 2005-10-19 | 三星电子株式会社 | 使用高熔点金属氧化物或氧化硅掩蔽层制造的具有超分辨率近场结构的高密度记录介质 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3585514D1 (de) * | 1984-12-27 | 1992-04-09 | Toshiba Kawasaki Kk | Optisches speichermedium. |
| FR2817384A1 (fr) * | 2000-11-24 | 2002-05-31 | Thomson Licensing Sa | Moyens de stockage optique de donnees numeriques sous forme de particules deposees sur une surface dont les dimensions sont inferieures aux longueurs d'onde d'un rayonnement de lecture des donnees |
| JP2002301699A (ja) * | 2001-04-02 | 2002-10-15 | Toyota Central Res & Dev Lab Inc | 光加工方法、情報記録用材料及び情報記録媒体 |
| JP4106417B2 (ja) * | 2002-05-16 | 2008-06-25 | 三星電子株式会社 | 高融点の記録層を有する記録媒体及びその記録媒体の情報記録方法、及びその記録媒体から情報を再生する情報再生装置及び情報再生方法 |
| JP3849606B2 (ja) * | 2002-08-06 | 2006-11-22 | 株式会社日立製作所 | 情報記録媒体、情報記録方法、情報再生方法 |
| KR100922870B1 (ko) * | 2002-09-28 | 2009-10-20 | 삼성전자주식회사 | 고밀도 재생전용 광디스크 |
| DE10249095A1 (de) * | 2002-10-21 | 2004-04-29 | Fuji Magnetics Gmbh | Speichermedium |
| KR20050029765A (ko) * | 2003-09-22 | 2005-03-28 | 삼성전자주식회사 | 고밀도 재생전용 광디스크 및 그 제조방법 |
| JP2005285162A (ja) * | 2004-03-26 | 2005-10-13 | Ricoh Co Ltd | 光記録情報記録媒体 |
-
2006
- 2006-02-24 EP EP06300160A patent/EP1826758A1/en not_active Withdrawn
-
2007
- 2007-01-24 EP EP07101056A patent/EP1826759B1/en not_active Not-in-force
- 2007-01-24 DE DE602007010681T patent/DE602007010681D1/de active Active
- 2007-02-15 TW TW096105592A patent/TWI398865B/zh not_active IP Right Cessation
- 2007-02-15 CN CN2007100059310A patent/CN101025967B/zh not_active Expired - Fee Related
- 2007-02-20 US US11/709,117 patent/US7781042B2/en not_active Expired - Fee Related
- 2007-02-23 JP JP2007043543A patent/JP4569583B2/ja not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1685401A (zh) * | 2002-09-26 | 2005-10-19 | 三星电子株式会社 | 使用高熔点金属氧化物或氧化硅掩蔽层制造的具有超分辨率近场结构的高密度记录介质 |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平5-62239A 1993.03.12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4569583B2 (ja) | 2010-10-27 |
| JP2007226955A (ja) | 2007-09-06 |
| EP1826758A1 (en) | 2007-08-29 |
| CN101025967A (zh) | 2007-08-29 |
| TW200805353A (en) | 2008-01-16 |
| EP1826759A1 (en) | 2007-08-29 |
| TWI398865B (zh) | 2013-06-11 |
| EP1826759B1 (en) | 2010-11-24 |
| US20070202441A1 (en) | 2007-08-30 |
| DE602007010681D1 (de) | 2011-01-05 |
| US7781042B2 (en) | 2010-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101020 Termination date: 20160215 |