CN101019222A - 在半导体器件上形成凸块的方法 - Google Patents
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Abstract
本发明提供了一种在半导体器件上形成凸块的方法,该方法使用熔融金属化合物在半导体器件上形成凸块,由此使凸块的误差率最小化,从而减小了投资成本,并且允许凸块容易地形成在少量半导体器件和大量半导体器件上。凸块形成方法包括凸块形成步骤(100)和回流焊步骤(200),凸块形成步骤(100)用来将熔融金属化合物(40)以预定速度喷射在半导体器件(10)上以形成具有预定直径的凸块(50),回流焊步骤(200)用来通过加热在凸块形成步骤中形成的凸块来使该凸块形成为球体。
Description
技术领域
本发明总体上涉及一种在半导体器件上形成凸块(bump)的方法,更具体地涉及这样一种凸块形成方法,该方法使用流体在半导体器件上形成凸块,由此使得凸块的误差率最小,从而减小投资成本,并允许凸块容易地形成在少量半导体器件以及大量半导体器件上。
背景技术
通常,半导体器件具有几十个半导体芯片。每个半导体芯片都设有凸块底金属层(under ball metallurgy),在该凸块底金属层上形成凸块,以确保在半导体芯片连接到基板时具有良好的电连接。
为了在凸块底金属层上形成凸块,已经提出了丝网印刷方法、电镀方法和沉积方法等。
根据丝网印刷方法,钝化膜形成在晶片的上表面上而不是凸块底金属层上,以保护形成在晶片上的图案。接着,通过金属沉积处理在凸块底金属层和钝化膜上沉积包括钛(Ti)、钨(W)和金(Au)的三层金属膜,也就是沉积上阻挡金属。然后,向上阻挡金属施加光致抗蚀剂,使得凸块底金属层不彼此电连接。之后,通过光刻处理除去上阻挡金属的一部分,光刻处理包括曝光步骤、显影步骤、上阻挡金属蚀刻步骤和去除步骤。因此,上阻挡金属仅保留在凸块底金属层上。在这样的情况下,由于上阻挡金属为三层金属膜,因此上阻挡金属蚀刻步骤被依次进行三次。
在仅在凸块底金属层上形成上阻挡金属之后,将丝网掩模(screenmask)层压在半导体器件上,并且使用挤压机将焊膏施加在凸块底金属层上。在这样的情况下,上阻挡金属作为加强凸块底金属层和焊膏之间的结合力的介质。
在向凸块底金属层施加焊膏之后,将焊剂(flux)施加到焊膏上。在使用包含焊剂的焊膏的情况下,不需要额外的焊剂施加处理。焊剂为一种溶剂,该溶剂用于在将凸块底金属层连接到焊膏时,整洁地连接凸块底金属层和焊膏,并且防止形成氧化物,由此确保可靠的连接。
随后,进行回流焊处理(reflow process)。当焊膏在回流焊处理中被加热到预定温度时,焊膏由于焊剂而形成为球体。由此,在凸块底金属层上形成凸块。接着,进行焊剂清除处理以从晶片中除去焊剂残留物和杂质。因此,得到在预定位置具有凸块的晶片。
同时,以如下方式进行传统电镀方法。首先,制备具有凸块底金属层的晶片。在晶片的上表面上而不是凸块底金属层上形成钝化层。接着,通过金属沉积处理在凸块底金属层和钝化层上沉积上阻挡金属。然后,向上阻挡金属的上表面上施加光致抗蚀剂,通过曝光操作和显影操作除去沉积在凸块底金属层上的光致抗蚀剂的一部分,从而使布置在凸块底金属层上的上阻挡金属的一部分暴露在外部。这时,通过蚀刻操作除去留在上阻挡金属上的光致抗蚀剂残留物。此后,通过电解电镀操作在凸块底金属层上方的空间中形成电镀部分。使用焊料、金、镍和其它材料作为电镀部分的材料。在电镀部分被如此形成之后,剥离并除去多余的光致抗蚀剂。然后,蚀刻上阻挡金属,从而除去上阻挡金属除了设置在电镀部分下方的部分的部分。在这样的情况下,由于上阻挡金属为三层金属膜,因此蚀刻处理依次进行三次。
然后,进行浸渍操作。也就是说,将具有电镀部分的半导体器件浸入焊剂槽中,从而将焊剂施加到电镀部分上。接着,通过回流焊处理在电镀部分上进行预定加热,从而使每个电镀部分由于焊剂而形成为球体。因此,在凸块底金属层上形成凸块,然后,进行焊剂清除处理。也就是说,向半导体器件供应清除流体,以从半导体器件中除去焊剂残留物和杂质。由此,得到了在预定位置处具有多个凸块的半导体器件。
然而,传统凸块形成方法具有以下问题。即,丝网印刷方法的问题在于,当利用丝网掩模施加焊膏时,由于挤压机的操作不均匀性和印刷状态,焊膏可能会不均匀地施加,从而可能在相邻的端子之间出现焊料桥接或高度差,或者可能施加不足的焊料,由此形成有缺陷的凸块,因此极大地降低了生产率。电镀方法的问题在于,需要多个处理来形成凸块,从而通常花费30~40分钟形成凸块,由此增加了凸块制造时间。电镀方法的另一个问题在于需要昂贵的电镀设备,使得凸块制造成本增加。电镀方法还具有的问题在于电镀时间、施加电流和电压等根据半导体器件的位置而发生变化,从而使电镀量发生变化。由此,在晶片的边缘上形成的凸块变得很小。这样,凸块的形状变得不规则。另外,如果电镀量上的差异很大,则当半导体器件被连接到基板上时,会出现开口缺陷。
发明内容
因此,针对现有技术中出现的上述问题而作出本发明,并且本发明的一个目的在于提供一种方法,该方法使用流体在半导体器件上形成多个凸块,由此使凸块的误差率最小,从而减小了投资成本,并且允许凸块容易地形成在少量半导体器件以及大量半导体器件上。
为了实现上述目的,本发明提供了一种方法,该方法用于在设置于半导体器件上的凸块底金属层上形成凸块以加强电连接,并包括:凸块形成步骤,用来通过将熔融金属化合物(compound)以预定速度喷射到半导体器件上而形成具有预定直径的凸块;回流焊(reflow)步骤,用来通过加热在凸块形成步骤中形成的凸块而使其形成为球体。
附图说明
结合附图,从下面的详细说明中将更加清楚地了解本发明的上述和其它目的、特征和其它优点,其中:
图1为说明根据本发明在半导体器件上形成凸块的方法的框图;
图2为说明根据本发明在凸块形成方法中进行晶片定位操作的视图;
图3为说明根据本发明通过喷射熔融金属化合物来形成凸块的操作的视图;以及
图4为说明根据本发明通过凸块形成方法的回流焊处理将凸块形成为球体的状态的视图。
具体实施方式
下面将参照附图对本发明的优选实施例进行说明。
图1为说明根据本发明在半导体器件上形成凸块的方法的框图,图2为说明根据本发明在凸块形成方法中进行晶片定位操作的视图,图3为说明根据本发明通过喷射熔融金属化合物来形成凸块的操作的视图,图4为说明根据本发明通过凸块形成方法的回流焊处理使凸块形成球体的状态的视图。
参照图1至图4,根据本发明的凸块形成方法包括凸块形成步骤100和回流焊步骤200。
在凸块形成步骤100中,以预定速度向半导体器件10供给熔融金属化合物,由此形成具有预定直径的凸块50。
在详细说明中,流体供给单元30以预定速度将预定量的具有预定尺寸的熔融金属化合物40喷射到半导体器件10的预定位置上,从而在凸块底金属层20上形成凸块50。熔融金属化合物40从包括由锡和铅组成的混合物、由锡、银和铜组成的混合物和由锡和铜组成的混合物的组中选出。包含在每个混合物中的成分被熔化并以预定比例彼此混合。半导体器件10被移动,使得半导体器件10的预设位置坐标被依次且精确地定位在流体供应单元30下方。因此,从流体供应单元30供应来的熔融金属化合物40精确地落到凸块底金属层20上。
另外,凸块形成步骤100包括凸块定位步骤110和晶片定位步骤120,这些步骤都是预备步骤并且在将熔融金属化合物40供给到半导体器件10之前进行,从而熔融金属化合物40被准确地供应到半导体器件10上的预定位置处以形成凸块50。
在凸块定位步骤110中,形成将要形成在半导体器件10上的凸块50的列和行。也就是说,为了在精确位置处形成凸块50,设定设置在半导体器件10上的凸块底金属层20的精确位置坐标并对其编程。
执行晶片定位步骤120,以便在预设位置坐标处精确地形成凸块50。在晶片定位步骤120中,检测在其上形成多个凸块50的目标(即半导体器件10)的初始位置A。调整半导体器件10的位置,使得初始位置A精确地定位在预定位置。
当凸块形成步骤100完成时,执行回流焊步骤200。在回流焊步骤200中,将设置在凸块底金属层20上的凸块50加热到预定温度。被加热的凸块50由于表面张力而形成为球体,从而得到所需的凸块50。
根据本发明,按如下步骤形成半导体晶片的凸块。即,流体供应单元30将熔融金属化合物40以具有预定直径的球体的形式供给到晶片10的凸块底金属层20,由此形成凸块50。因此,显著地减少了误差率和设备成本,并且极大地增加了生产率。另外,即使生产少量半导体器件10时,利润也高。可以根据将要形成的凸块的直径而用另一个喷嘴代替流体供应单元30的喷嘴来形成不同尺寸的凸块50,从而可加工性和生产性是优良的,并且显著地减小了制造成本。
工业实用性
如上所述,本发明提供了一种形成凸块的方法,该方法使用流体在半导体器件上形成凸块,由此使得凸块的误差率最小,减小了投资成本,并且允许凸块容易地形成在少量半导体器件和大量半导体器件上。
Claims (4)
1.一种方法,该方法用来在设置于半导体器件上的凸块底金属层上形成凸块以加强电连接,并包括:
凸块形成步骤,用来通过将熔融金属化合物以预定速度喷射到所述半导体器件上而形成具有预定直径的所述凸块;以及
回流焊步骤,用来通过加热在所述凸块形成步骤中形成的所述凸块而使所述凸块形成为球体。
2.根据权利要求1所述的方法,其中,所述熔融金属化合物包括由锡和铅组成的混合物,这些锡和铅被熔化并且以预定比例相互混合。
3.根据权利要求1所述的方法,其中,所述熔融金属化合物包括由锡、银和铜组成的混合物,这些锡、银和铜被熔化并且以预定比例相互混合。
4.根据权利要求1所述的方法,其中,所述熔融金属化合物包括由锡和铜组成的混合物,这些锡和铜被熔化并且以预定比例彼此混合。
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