CN101008082A - Cvd金刚石膜连续制备系统 - Google Patents
Cvd金刚石膜连续制备系统 Download PDFInfo
- Publication number
- CN101008082A CN101008082A CN 200710019898 CN200710019898A CN101008082A CN 101008082 A CN101008082 A CN 101008082A CN 200710019898 CN200710019898 CN 200710019898 CN 200710019898 A CN200710019898 A CN 200710019898A CN 101008082 A CN101008082 A CN 101008082A
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- cavity
- loading
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- door
- diamond film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 66
- 239000010432 diamond Substances 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000011068 loading method Methods 0.000 claims abstract description 61
- 230000008021 deposition Effects 0.000 claims description 52
- 238000007789 sealing Methods 0.000 claims description 38
- 230000007246 mechanism Effects 0.000 claims description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 230000000630 rising effect Effects 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 2
- 230000007306 turnover Effects 0.000 claims description 2
- 208000002925 dental caries Diseases 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000012528 membrane Substances 0.000 abstract description 4
- 230000007704 transition Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 50
- 239000007789 gas Substances 0.000 description 26
- 238000003763 carbonization Methods 0.000 description 16
- 238000009434 installation Methods 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 4
- 229910001573 adamantine Inorganic materials 0.000 description 4
- -1 electricity Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002113 nanodiamond Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000486406 Trachea Species 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100198987A CN100453696C (zh) | 2007-02-01 | 2007-02-01 | Cvd金刚石膜连续制备系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100198987A CN100453696C (zh) | 2007-02-01 | 2007-02-01 | Cvd金刚石膜连续制备系统 |
Publications (2)
Publication Number | Publication Date |
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CN101008082A true CN101008082A (zh) | 2007-08-01 |
CN100453696C CN100453696C (zh) | 2009-01-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2007100198987A Expired - Fee Related CN100453696C (zh) | 2007-02-01 | 2007-02-01 | Cvd金刚石膜连续制备系统 |
Country Status (1)
Country | Link |
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CN (1) | CN100453696C (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101560649B (zh) * | 2009-06-03 | 2010-11-10 | 中南大学 | 多用途批量制备cvd金刚石膜的工业设备 |
CN103498192A (zh) * | 2013-09-29 | 2014-01-08 | 青岛赛瑞达电子科技有限公司 | 双工位cvd炉 |
CN106498367A (zh) * | 2016-10-21 | 2017-03-15 | 哈尔滨工业大学 | 一种用于化学气相沉积金刚石薄膜的紧凑型真空反应装置 |
CN107034447A (zh) * | 2017-05-05 | 2017-08-11 | 宁波工程学院 | 一种化学气相沉积镀制金刚石膜的设备 |
CN107142464A (zh) * | 2017-05-02 | 2017-09-08 | 惠科股份有限公司 | 一种化学气相沉膜装置 |
WO2021008057A1 (zh) * | 2019-07-18 | 2021-01-21 | 中国科学院金属研究所 | 金刚石薄膜连续制备使用的hfcvd设备及其镀膜方法 |
CN113862639A (zh) * | 2021-09-15 | 2021-12-31 | 杭州中欣晶圆半导体股份有限公司 | 一种cvd低温氧化膜连续制备系统及制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH055179A (ja) * | 1991-01-24 | 1993-01-14 | Fujitsu Ltd | ダイヤモンド膜と混合物層の製造方法および装置 |
CN1060537C (zh) * | 1998-06-12 | 2001-01-10 | 上海交通大学 | 金刚石涂层拉丝模 |
JP3861178B2 (ja) * | 2002-08-30 | 2006-12-20 | 広島県 | 熱フィラメントcvd法 |
CN2666928Y (zh) * | 2003-09-23 | 2004-12-29 | 青岛科技大学 | 一种等离子热丝法化学气相沉积金刚石膜的装置 |
CN100387752C (zh) * | 2005-10-14 | 2008-05-14 | 南京航空航天大学 | 连续批量制备金刚石膜的制备系统 |
-
2007
- 2007-02-01 CN CNB2007100198987A patent/CN100453696C/zh not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101560649B (zh) * | 2009-06-03 | 2010-11-10 | 中南大学 | 多用途批量制备cvd金刚石膜的工业设备 |
CN103498192A (zh) * | 2013-09-29 | 2014-01-08 | 青岛赛瑞达电子科技有限公司 | 双工位cvd炉 |
CN103498192B (zh) * | 2013-09-29 | 2016-07-06 | 青岛赛瑞达电子科技有限公司 | 双工位cvd炉 |
CN106498367A (zh) * | 2016-10-21 | 2017-03-15 | 哈尔滨工业大学 | 一种用于化学气相沉积金刚石薄膜的紧凑型真空反应装置 |
CN106498367B (zh) * | 2016-10-21 | 2018-09-14 | 哈尔滨工业大学 | 一种用于化学气相沉积金刚石薄膜的紧凑型真空反应装置 |
CN107142464A (zh) * | 2017-05-02 | 2017-09-08 | 惠科股份有限公司 | 一种化学气相沉膜装置 |
CN107034447A (zh) * | 2017-05-05 | 2017-08-11 | 宁波工程学院 | 一种化学气相沉积镀制金刚石膜的设备 |
CN107034447B (zh) * | 2017-05-05 | 2023-09-15 | 宁波工程学院 | 一种化学气相沉积镀制金刚石膜的设备 |
WO2021008057A1 (zh) * | 2019-07-18 | 2021-01-21 | 中国科学院金属研究所 | 金刚石薄膜连续制备使用的hfcvd设备及其镀膜方法 |
CN113862639A (zh) * | 2021-09-15 | 2021-12-31 | 杭州中欣晶圆半导体股份有限公司 | 一种cvd低温氧化膜连续制备系统及制备方法 |
CN113862639B (zh) * | 2021-09-15 | 2024-03-01 | 杭州中欣晶圆半导体股份有限公司 | 一种cvd低温氧化膜连续制备系统及制备方法 |
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Publication number | Publication date |
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CN100453696C (zh) | 2009-01-21 |
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Owner name: HAIAN CHANGGONG TECHNOLOGY TRANSFER CENTER CO., LT Free format text: FORMER OWNER: NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS Effective date: 20140527 |
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Effective date of registration: 20140527 Address after: 226600 No. 8 Yingbin Road, Haian County, Nantong, Jiangsu Patentee after: Haian Chang Chang Technology Transfer Center Co., Ltd. Address before: Yudaojie Nanjing 210016 Jiangsu province No. 29 Patentee before: Nanjing University of Aeronautics and Astronautics |
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