CN100591181C - 倒装焊发光二极管芯片的制造方法 - Google Patents
倒装焊发光二极管芯片的制造方法 Download PDFInfo
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- CN100591181C CN100591181C CN200710053027A CN200710053027A CN100591181C CN 100591181 C CN100591181 C CN 100591181C CN 200710053027 A CN200710053027 A CN 200710053027A CN 200710053027 A CN200710053027 A CN 200710053027A CN 100591181 C CN100591181 C CN 100591181C
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CN200710053027A CN100591181C (zh) | 2007-08-24 | 2007-08-24 | 倒装焊发光二极管芯片的制造方法 |
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CN200710053027A CN100591181C (zh) | 2007-08-24 | 2007-08-24 | 倒装焊发光二极管芯片的制造方法 |
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CN101119601A CN101119601A (zh) | 2008-02-06 |
CN100591181C true CN100591181C (zh) | 2010-02-17 |
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CN104362242A (zh) * | 2014-10-17 | 2015-02-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Led芯片及其应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1156003C (zh) * | 1996-12-19 | 2004-06-30 | 艾利森电话股份有限公司 | 一种组件结构 |
CN1627544A (zh) * | 2003-12-12 | 2005-06-15 | 中国科学院半导体研究所 | 倒装焊技术制作氮化镓基发光二极管管芯的方法 |
CN1627543A (zh) * | 2003-12-09 | 2005-06-15 | 中国科学院半导体研究所 | 利用倒装焊技术制作氮化镓基发光二极管管芯的方法 |
CN1755921A (zh) * | 2004-09-30 | 2006-04-05 | 威盛电子股份有限公司 | 倒装焊封装方法及封装结构 |
US7084391B1 (en) * | 2005-04-05 | 2006-08-01 | Wen Ching Chen | Image sensing module |
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- 2007-08-24 CN CN200710053027A patent/CN100591181C/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1156003C (zh) * | 1996-12-19 | 2004-06-30 | 艾利森电话股份有限公司 | 一种组件结构 |
CN1627543A (zh) * | 2003-12-09 | 2005-06-15 | 中国科学院半导体研究所 | 利用倒装焊技术制作氮化镓基发光二极管管芯的方法 |
CN1627544A (zh) * | 2003-12-12 | 2005-06-15 | 中国科学院半导体研究所 | 倒装焊技术制作氮化镓基发光二极管管芯的方法 |
CN1755921A (zh) * | 2004-09-30 | 2006-04-05 | 威盛电子股份有限公司 | 倒装焊封装方法及封装结构 |
US7084391B1 (en) * | 2005-04-05 | 2006-08-01 | Wen Ching Chen | Image sensing module |
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Address after: 430223 Hubei city of Wuhan province Wuhan University Science Park East Lake New Technology Development Zone business building room 2015 Patentee after: HC SemiTek Corporation Address before: 430223 Hubei city of Wuhan province Wuhan University Science Park East Lake New Technology Development Zone business building room 2015 Patentee before: Huacan Photoelectric Co., Ltd., Wuhan |
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Effective date of registration: 20191226 Address after: 215600 Huacan photoelectric (Suzhou) Co., Ltd., CHENFENG Road, Zhangjiagang Economic Development Zone, Suzhou City, Jiangsu Province Patentee after: Huacan Photoelectric (Suzhou) Co., Ltd. Address before: 430223 Hubei city of Wuhan province Wuhan University Science Park East Lake New Technology Development Zone business building room 2015 Patentee before: HC SemiTek Corporation |
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