CN100576595C - 发光装置 - Google Patents
发光装置 Download PDFInfo
- Publication number
- CN100576595C CN100576595C CN03158666A CN03158666A CN100576595C CN 100576595 C CN100576595 C CN 100576595C CN 03158666 A CN03158666 A CN 03158666A CN 03158666 A CN03158666 A CN 03158666A CN 100576595 C CN100576595 C CN 100576595C
- Authority
- CN
- China
- Prior art keywords
- film
- insulating film
- fluororesin
- inorganic insulating
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims description 60
- 238000007789 sealing Methods 0.000 claims description 30
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 28
- 239000002033 PVDF binder Substances 0.000 claims description 27
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 claims description 27
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 claims description 27
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 17
- 239000003566 sealing material Substances 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 229920001577 copolymer Polymers 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 239000004962 Polyamide-imide Substances 0.000 claims description 5
- 229920002312 polyamide-imide Polymers 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 26
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052731 fluorine Inorganic materials 0.000 abstract description 14
- 239000011737 fluorine Substances 0.000 abstract description 14
- 239000007769 metal material Substances 0.000 abstract description 13
- 229920001343 polytetrafluoroethylene Polymers 0.000 abstract description 7
- 239000004810 polytetrafluoroethylene Substances 0.000 abstract description 7
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- 238000005260 corrosion Methods 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 5
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- 238000003475 lamination Methods 0.000 abstract description 2
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- 239000010408 film Substances 0.000 description 160
- 239000010410 layer Substances 0.000 description 34
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000012212 insulator Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000005401 electroluminescence Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 150000005072 1,3,4-oxadiazoles Chemical class 0.000 description 2
- 229910017073 AlLi Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910017911 MgIn Inorganic materials 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- 229920002972 Acrylic fiber Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- OKSHBIKZVJQWEY-UHFFFAOYSA-N C=C.FC=C Chemical group C=C.FC=C OKSHBIKZVJQWEY-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- XHIXNYWQZXIABF-UHFFFAOYSA-N [N+]=O.[O-2].[Al+3].[O-2] Chemical compound [N+]=O.[O-2].[Al+3].[O-2] XHIXNYWQZXIABF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 230000003595 spectral effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/87—Arrangements for heating or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8794—Arrangements for heating and cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002276382A JP2004119016A (ja) | 2002-09-20 | 2002-09-20 | 発光装置 |
| JP276382/02 | 2002-09-20 | ||
| JP276382/2002 | 2002-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1492723A CN1492723A (zh) | 2004-04-28 |
| CN100576595C true CN100576595C (zh) | 2009-12-30 |
Family
ID=31944624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN03158666A Expired - Fee Related CN100576595C (zh) | 2002-09-20 | 2003-09-19 | 发光装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7268487B2 (enExample) |
| EP (1) | EP1401032A3 (enExample) |
| JP (1) | JP2004119016A (enExample) |
| KR (1) | KR20040025834A (enExample) |
| CN (1) | CN100576595C (enExample) |
| TW (1) | TWI369917B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004119015A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| US20040099926A1 (en) * | 2002-11-22 | 2004-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same |
| US7652359B2 (en) * | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
| JP4785415B2 (ja) * | 2004-05-14 | 2011-10-05 | 株式会社半導体エネルギー研究所 | エレクトロルミネッセンス表示装置の作製方法 |
| EP1655790B1 (en) * | 2004-10-21 | 2010-08-04 | LG Display Co., Ltd. | Organic electroluminescent device and method of manufacturing the same |
| CN101305465B (zh) * | 2005-11-09 | 2010-06-09 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| EP2444470B1 (en) * | 2007-08-31 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic appliance |
| US8710375B2 (en) * | 2008-03-04 | 2014-04-29 | Sharp Kabushiki Kaisha | Display device substrate, method for manufacturing the same, display device, method for forming multi-layer wiring, and multi-layer wiring substrate |
| TWI388056B (zh) * | 2008-12-05 | 2013-03-01 | Chunghwa Picture Tubes Ltd | 有機電致發光元件 |
| TWI589042B (zh) | 2010-01-20 | 2017-06-21 | 半導體能源研究所股份有限公司 | 發光裝置，撓性發光裝置，電子裝置，照明設備，以及發光裝置和撓性發光裝置的製造方法 |
| US9000442B2 (en) * | 2010-01-20 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device |
| KR101033963B1 (ko) * | 2010-09-24 | 2011-05-11 | 엘지이노텍 주식회사 | 발광 소자 어레이 모듈 및 그의 보호막 형성 방법 |
| KR20120109081A (ko) * | 2011-03-24 | 2012-10-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN102856503A (zh) * | 2011-06-28 | 2013-01-02 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
| KR101643012B1 (ko) * | 2011-10-04 | 2016-07-28 | 엘지디스플레이 주식회사 | 표시장치 |
| CN103035663B (zh) * | 2011-10-04 | 2016-08-10 | 乐金显示有限公司 | 显示器件 |
| KR102000709B1 (ko) | 2012-08-31 | 2019-09-30 | 삼성디스플레이 주식회사 | 디스플레이 패널의 제조방법 |
| WO2015029608A1 (ja) | 2013-08-28 | 2015-03-05 | シャープ株式会社 | エレクトロルミネッセンス装置、及びその製造方法 |
| KR102520536B1 (ko) * | 2016-03-30 | 2023-04-12 | 엘지이노텍 주식회사 | 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치 |
| KR102539668B1 (ko) * | 2016-06-30 | 2023-06-02 | 엘지이노텍 주식회사 | 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치 |
| KR102421576B1 (ko) * | 2017-03-10 | 2022-07-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
Family Cites Families (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5435780B2 (enExample) * | 1974-07-23 | 1979-11-05 | ||
| US4417174A (en) * | 1980-10-03 | 1983-11-22 | Alps Electric Co., Ltd. | Electroluminescent cell and method of producing the same |
| JPS60115944A (ja) | 1983-11-29 | 1985-06-22 | Asahi Chem Ind Co Ltd | 電子写真用感光体 |
| US4580818A (en) * | 1984-10-25 | 1986-04-08 | Lyng William E | Locker latching assembly |
| JPH0265895U (enExample) * | 1988-11-07 | 1990-05-17 | ||
| JPH03153859A (ja) | 1989-11-08 | 1991-07-01 | Sekisui Chem Co Ltd | 表面改質プラスチック |
| US5188876A (en) * | 1990-04-12 | 1993-02-23 | Armstrong World Industries, Inc. | Surface covering with inorganic wear layer |
| JP2597047B2 (ja) | 1990-12-28 | 1997-04-02 | 出光興産株式会社 | 有機エレクトロルミネッセンスデバイス |
| US5427858A (en) * | 1990-11-30 | 1995-06-27 | Idemitsu Kosan Company Limited | Organic electroluminescence device with a fluorine polymer layer |
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-
2002
- 2002-09-20 JP JP2002276382A patent/JP2004119016A/ja not_active Withdrawn
-
2003
- 2003-09-03 TW TW092124359A patent/TWI369917B/zh not_active IP Right Cessation
- 2003-09-16 US US10/662,357 patent/US7268487B2/en not_active Expired - Fee Related
- 2003-09-18 KR KR1020030064762A patent/KR20040025834A/ko not_active Ceased
- 2003-09-19 EP EP03021328A patent/EP1401032A3/en not_active Withdrawn
- 2003-09-19 CN CN03158666A patent/CN100576595C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004119016A (ja) | 2004-04-15 |
| TWI369917B (en) | 2012-08-01 |
| US7268487B2 (en) | 2007-09-11 |
| US20040056589A1 (en) | 2004-03-25 |
| TW200410594A (en) | 2004-06-16 |
| EP1401032A3 (en) | 2007-06-13 |
| CN1492723A (zh) | 2004-04-28 |
| KR20040025834A (ko) | 2004-03-26 |
| EP1401032A2 (en) | 2004-03-24 |
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