CN100576461C - 苯并环丁烯层沉积方法及凸点制作方法 - Google Patents
苯并环丁烯层沉积方法及凸点制作方法 Download PDFInfo
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- CN100576461C CN100576461C CN200710042348A CN200710042348A CN100576461C CN 100576461 C CN100576461 C CN 100576461C CN 200710042348 A CN200710042348 A CN 200710042348A CN 200710042348 A CN200710042348 A CN 200710042348A CN 100576461 C CN100576461 C CN 100576461C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200710042348A CN100576461C (zh) | 2007-06-21 | 2007-06-21 | 苯并环丁烯层沉积方法及凸点制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN200710042348A CN100576461C (zh) | 2007-06-21 | 2007-06-21 | 苯并环丁烯层沉积方法及凸点制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN101330018A CN101330018A (zh) | 2008-12-24 |
CN100576461C true CN100576461C (zh) | 2009-12-30 |
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CN200710042348A Expired - Fee Related CN100576461C (zh) | 2007-06-21 | 2007-06-21 | 苯并环丁烯层沉积方法及凸点制作方法 |
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CN (1) | CN100576461C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103578919A (zh) * | 2012-07-26 | 2014-02-12 | 无锡华润上华科技有限公司 | 一种mos器件的钝化层形成方法以及一种mos器件 |
CN103094296B (zh) * | 2013-01-23 | 2015-09-23 | 豪威科技(上海)有限公司 | 背照式cmos影像传感器及其制造方法 |
CN103175495B (zh) * | 2013-02-27 | 2015-11-25 | 上海华力微电子有限公司 | 二氧化硅标准晶片及其制造方法 |
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Publication number | Publication date |
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CN101330018A (zh) | 2008-12-24 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111117 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091230 Termination date: 20190621 |