CN100552817C - 稳定性得到提高的静态随机存取存储器单元及其形成方法 - Google Patents
稳定性得到提高的静态随机存取存储器单元及其形成方法 Download PDFInfo
- Publication number
- CN100552817C CN100552817C CNB2007101044613A CN200710104461A CN100552817C CN 100552817 C CN100552817 C CN 100552817C CN B2007101044613 A CNB2007101044613 A CN B2007101044613A CN 200710104461 A CN200710104461 A CN 200710104461A CN 100552817 C CN100552817 C CN 100552817C
- Authority
- CN
- China
- Prior art keywords
- memory cell
- input end
- output terminal
- digital inverter
- feedback
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/409,858 US7397691B2 (en) | 2006-04-24 | 2006-04-24 | Static random access memory cell with improved stability |
US11/409,858 | 2006-04-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101064189A CN101064189A (zh) | 2007-10-31 |
CN100552817C true CN100552817C (zh) | 2009-10-21 |
Family
ID=38619336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101044613A Active CN100552817C (zh) | 2006-04-24 | 2007-04-23 | 稳定性得到提高的静态随机存取存储器单元及其形成方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7397691B2 (zh) |
CN (1) | CN100552817C (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7397691B2 (en) * | 2006-04-24 | 2008-07-08 | International Business Machines Corporation | Static random access memory cell with improved stability |
US7719887B2 (en) * | 2007-08-27 | 2010-05-18 | International Business Machines Corporation | CMOS storage devices configurable in high performance mode or radiation tolerant mode |
US7978507B2 (en) * | 2008-06-27 | 2011-07-12 | Sandisk 3D, Llc | Pulse reset for non-volatile storage |
US8400822B2 (en) * | 2010-03-22 | 2013-03-19 | Qualcomm Incorporated | Multi-port non-volatile memory that includes a resistive memory element |
CN101840728B (zh) * | 2010-05-28 | 2015-06-10 | 上海华虹宏力半导体制造有限公司 | 一种双端sram单元 |
US9777897B2 (en) * | 2012-02-07 | 2017-10-03 | Cree, Inc. | Multiple panel troffer-style fixture |
CN105393362A (zh) * | 2013-03-13 | 2016-03-09 | D3半导体有限公司 | 用于垂直场效应器件的温度补偿的器件架构和方法 |
US10734065B2 (en) * | 2017-08-23 | 2020-08-04 | Arm Limited | Providing a discharge boundary using bitline discharge control circuitry for an integrated circuit |
TWI717269B (zh) * | 2020-04-22 | 2021-01-21 | 旺宏電子股份有限公司 | 記憶單元操作方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63104290A (ja) * | 1986-10-21 | 1988-05-09 | Nec Corp | 半導体記憶装置 |
US5204990A (en) * | 1988-09-07 | 1993-04-20 | Texas Instruments Incorporated | Memory cell with capacitance for single event upset protection |
US5126279A (en) * | 1988-12-19 | 1992-06-30 | Micron Technology, Inc. | Single polysilicon cross-coupled resistor, six-transistor SRAM cell design technique |
US5166902A (en) * | 1991-03-18 | 1992-11-24 | United Technologies Corporation | SRAM memory cell |
US5206533A (en) * | 1991-06-24 | 1993-04-27 | Texas Instruments Incorporated | Transistor device with resistive coupling |
US6271568B1 (en) * | 1997-12-29 | 2001-08-07 | Utmc Microelectronic Systems Inc. | Voltage controlled resistance modulation for single event upset immunity |
JP2003060087A (ja) * | 2001-08-10 | 2003-02-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2004079099A (ja) * | 2002-08-20 | 2004-03-11 | Fujitsu Ltd | 半導体メモリ |
US6992916B2 (en) * | 2003-06-13 | 2006-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM cell design with high resistor CMOS gate structure for soft error rate improvement |
US7397691B2 (en) * | 2006-04-24 | 2008-07-08 | International Business Machines Corporation | Static random access memory cell with improved stability |
-
2006
- 2006-04-24 US US11/409,858 patent/US7397691B2/en active Active
-
2007
- 2007-04-23 CN CNB2007101044613A patent/CN100552817C/zh active Active
-
2008
- 2008-05-30 US US12/130,257 patent/US7545671B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080225573A1 (en) | 2008-09-18 |
US7545671B2 (en) | 2009-06-09 |
US7397691B2 (en) | 2008-07-08 |
CN101064189A (zh) | 2007-10-31 |
US20070247896A1 (en) | 2007-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100552817C (zh) | 稳定性得到提高的静态随机存取存储器单元及其形成方法 | |
JP5076462B2 (ja) | 半導体メモリデバイス | |
US8223567B2 (en) | Memory read stability using selective precharge | |
US6717842B2 (en) | Static type semiconductor memory device with dummy memory cell | |
US20180294020A1 (en) | Memory macro and method of operating the same | |
US10600488B2 (en) | Non-volatile memory device including decoupling circuit | |
JP2002324400A (ja) | 半導体記憶装置のデータ書き込み方法及び半導体記憶装置 | |
US5875139A (en) | Bitline precharge circuit for semiconductor memory device | |
US9570156B1 (en) | Data aware write scheme for SRAM | |
US7852700B2 (en) | Memory device | |
US7876600B2 (en) | SRAM and method of controlling the SRAM | |
US6775176B2 (en) | Semiconductor memory device having memory cells requiring no refresh operations | |
US10600474B2 (en) | Write assist | |
CN110189781B (zh) | 用于静态随机存取存储器(sram)的写入方案 | |
CN113517012B (zh) | 半导体装置保护电路和相关联的方法、装置和系统 | |
US7433254B2 (en) | Accelerated single-ended sensing for a memory circuit | |
US9076501B2 (en) | Apparatuses and methods for reducing current leakage in a memory | |
US6898136B2 (en) | Semiconductor memory device, capable of reducing power consumption | |
US11062773B2 (en) | Near-memory computation system for analog computing | |
US6785167B2 (en) | ROM embedded DRAM with programming | |
WO2021077407A1 (en) | Data recovery management for memory | |
TWI789973B (zh) | 非揮發性電晶體嵌入於靜態隨機存取記憶體單元 | |
WO2023185207A1 (zh) | 一种铁电存储阵列、铁电存储器以及其操作方法 | |
US6091653A (en) | Method of sensing data in semiconductor memory device | |
CN110970064A (zh) | 存储器单元和用于控制存储器单元的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171103 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171103 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |