CN100547490C - 用于校准光刻工具中曝光部件的聚焦部分的方法 - Google Patents

用于校准光刻工具中曝光部件的聚焦部分的方法 Download PDF

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Publication number
CN100547490C
CN100547490C CNB031493408A CN03149340A CN100547490C CN 100547490 C CN100547490 C CN 100547490C CN B031493408 A CNB031493408 A CN B031493408A CN 03149340 A CN03149340 A CN 03149340A CN 100547490 C CN100547490 C CN 100547490C
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CN
China
Prior art keywords
wafer
focus
exposure
measuring
lithography tool
Prior art date
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Expired - Fee Related
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CNB031493408A
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English (en)
Chinese (zh)
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CN1484099A (zh
Inventor
约瑟夫·H·莱昂斯
约瑟夫·G·惠兰
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ASML Holding NV
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ASML Holding NV
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Publication date
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Publication of CN1484099A publication Critical patent/CN1484099A/zh
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Publication of CN100547490C publication Critical patent/CN100547490C/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CNB031493408A 2002-06-28 2003-06-27 用于校准光刻工具中曝光部件的聚焦部分的方法 Expired - Fee Related CN100547490C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US39193102P 2002-06-28 2002-06-28
US60/391,931 2002-06-28
US10/301,627 2002-11-22
US10/301,627 US6885429B2 (en) 2002-06-28 2002-11-22 System and method for automated focus measuring of a lithography tool

Publications (2)

Publication Number Publication Date
CN1484099A CN1484099A (zh) 2004-03-24
CN100547490C true CN100547490C (zh) 2009-10-07

Family

ID=29718517

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031493408A Expired - Fee Related CN100547490C (zh) 2002-06-28 2003-06-27 用于校准光刻工具中曝光部件的聚焦部分的方法

Country Status (7)

Country Link
US (2) US6885429B2 (enExample)
EP (1) EP1376052A3 (enExample)
JP (1) JP4083636B2 (enExample)
KR (1) KR100575172B1 (enExample)
CN (1) CN100547490C (enExample)
SG (3) SG138473A1 (enExample)
TW (1) TWI278016B (enExample)

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US7016025B1 (en) * 1999-06-24 2006-03-21 Asml Holding N.V. Method and apparatus for characterization of optical systems
US7242464B2 (en) * 1999-06-24 2007-07-10 Asml Holdings N.V. Method for characterizing optical systems using holographic reticles
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool
US8453111B2 (en) * 2004-05-14 2013-05-28 National Instruments Corporation Generating a hardware description for a programmable hardware element based on a graphical program including multiple models of computation
US7834975B2 (en) * 2004-12-27 2010-11-16 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
US7502097B2 (en) * 2004-12-27 2009-03-10 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
KR100689709B1 (ko) * 2005-08-10 2007-03-08 삼성전자주식회사 반도체 디바이스 제조를 위한 오버레이 마크 및 이를이용한 오버레이 측정방법
JP2008140911A (ja) * 2006-11-30 2008-06-19 Toshiba Corp フォーカスモニタ方法
TWI383273B (zh) 2007-11-20 2013-01-21 Asml Netherlands Bv 微影投射裝置之焦點測量方法及微影投射裝置之校準方法
CN101651098B (zh) * 2009-06-12 2012-10-17 上海宏力半导体制造有限公司 一种刻蚀方法
NL2004716A (en) * 2009-06-17 2010-12-20 Asml Netherlands Bv Lithographic method and arrangement.
NL2005997A (en) 2010-02-19 2011-08-22 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
CN102445855B (zh) * 2010-10-14 2013-09-11 中芯国际集成电路制造(上海)有限公司 双层曝光补偿方法
US8792080B2 (en) 2011-01-27 2014-07-29 International Business Machines Corporation Method and system to predict lithography focus error using simulated or measured topography
KR101966622B1 (ko) * 2012-04-05 2019-04-09 삼성전자주식회사 나노 임프린트 리소그래피용 템플리트의 제조 및 보정 방법
US9454072B2 (en) 2012-11-09 2016-09-27 Kla-Tencor Corporation Method and system for providing a target design displaying high sensitivity to scanner focus change
US9810916B2 (en) 2015-06-19 2017-11-07 Sandisk Technologies Llc Reticle with reduced transmission regions for detecting a defocus condition in a lithography process
JP6694717B2 (ja) * 2016-01-25 2020-05-20 デクセリアルズ株式会社 露光装置および露光方法
JP2018138990A (ja) 2016-12-08 2018-09-06 ウルトラテック インク 再構成ウェハーのリソグラフィ処理のための焦点制御のための走査方法
US10209636B1 (en) 2018-03-07 2019-02-19 Sandisk Technologies Llc Exposure focus leveling method using region-differentiated focus scan patterns
CN109116593B (zh) * 2018-08-02 2021-07-20 深圳市华星光电半导体显示技术有限公司 母板曝光方法
CN111338185B (zh) * 2018-12-19 2022-05-20 联芯集成电路制造(厦门)有限公司 增进晶片曝光品质的方法
JP7320986B2 (ja) * 2019-05-22 2023-08-04 キヤノン株式会社 露光装置及び物品の製造方法

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US4326805A (en) * 1980-04-11 1982-04-27 Bell Telephone Laboratories, Incorporated Method and apparatus for aligning mask and wafer members
US4645338A (en) * 1985-04-26 1987-02-24 International Business Machines Corporation Optical system for focus correction for a lithographic tool
US4786166A (en) * 1987-06-01 1988-11-22 Hewlett-Packard Company Determination of focal plane for a scanning projection aligner
US5991004A (en) * 1996-04-03 1999-11-23 Mrs Technology, Inc. Lens focus shift sensor
KR100200729B1 (ko) * 1996-09-18 1999-06-15 윤종용 포토리소그래피 장치의 포커스 캘리브레이션 장치
US5898479A (en) * 1997-07-10 1999-04-27 Vlsi Technology, Inc. System for monitoring optical properties of photolithography equipment
JP3809268B2 (ja) * 1997-12-19 2006-08-16 キヤノン株式会社 デバイス製造方法
JP4365908B2 (ja) * 1998-09-04 2009-11-18 キヤノン株式会社 面位置検出装置、露光装置およびデバイス製造方法
JP3862438B2 (ja) * 1998-12-28 2006-12-27 キヤノン株式会社 走査露光装置、走査露光方法およびデバイス製造方法
JP3385238B2 (ja) * 1999-01-12 2003-03-10 シャープ株式会社 光送受信モジュール
JP2000357656A (ja) * 1999-04-13 2000-12-26 Nikon Corp 露光装置、露光方法およびデバイス製造方法
US7016025B1 (en) * 1999-06-24 2006-03-21 Asml Holding N.V. Method and apparatus for characterization of optical systems
US7242464B2 (en) * 1999-06-24 2007-07-10 Asml Holdings N.V. Method for characterizing optical systems using holographic reticles
EP1301830A2 (en) * 2000-07-19 2003-04-16 Silicon Valley Group, Inc. Method for characterizing optical systems using holographic reticles
JP2002043214A (ja) * 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
US6278515B1 (en) 2000-08-29 2001-08-21 International Business Machines Corporation Method and apparatus for adjusting a tilt of a lithography tool
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool

Also Published As

Publication number Publication date
SG103389A1 (en) 2004-04-29
SG138472A1 (en) 2008-01-28
US6885429B2 (en) 2005-04-26
CN1484099A (zh) 2004-03-24
SG138473A1 (en) 2008-01-28
US20040001192A1 (en) 2004-01-01
JP4083636B2 (ja) 2008-04-30
EP1376052A2 (en) 2004-01-02
KR100575172B1 (ko) 2006-05-02
EP1376052A3 (en) 2006-08-02
US7081948B2 (en) 2006-07-25
US20050179883A1 (en) 2005-08-18
TW200400546A (en) 2004-01-01
KR20040026108A (ko) 2004-03-27
TWI278016B (en) 2007-04-01
JP2004040102A (ja) 2004-02-05

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Granted publication date: 20091007

Termination date: 20170627