CN100541715C - Processed substrate is carried out the device of semiconductor processes - Google Patents
Processed substrate is carried out the device of semiconductor processes Download PDFInfo
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- CN100541715C CN100541715C CNB2007101865507A CN200710186550A CN100541715C CN 100541715 C CN100541715 C CN 100541715C CN B2007101865507 A CNB2007101865507 A CN B2007101865507A CN 200710186550 A CN200710186550 A CN 200710186550A CN 100541715 C CN100541715 C CN 100541715C
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- mounting table
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- auxiliary tube
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Abstract
The present invention relates to processed substrate (W) is carried out the device of semiconductor processes, comprise and be configured on the mounting table (38), the auxiliary elevating mechanism that transports (48) that carries out processed substrate.Elevating mechanism comprises lift pin (51) that supports and make processed substrate elevating and the pilot hole (49) that guides the lifting action of lift pin.Pilot hole has the perforation mounting table, extends to the main aperture part (49a) and the corresponding elongated pore part (49b) of extending in the prolongation sleeve pipe (66) outstanding from the lower surface of mounting table with the main aperture part of lower surface downwards from upper surface.
Description
This case is
On April 20th, 2004, application number is
200480010775.1, denomination of invention is
To processed base Plate carries out the device of semiconductor processesDivide an application
Technical field
The present invention relates to treatment substrate is being implemented have the device of the substrate elevating mechanism of improvement in the device of semiconductor processes.Here, so-called semiconductor processes is meant by on the processed substrates such as glass substrate of semiconductor wafer or LCD (Liquid Crystal Display) or FPD (Flat Panel Display) usefulness, figure by in accordance with regulations forms semiconductor layer, insulating barrier, conductive layer etc., makes structures such as comprising semiconductor equipment and the distribution that is connected with semiconductor equipment, electrode and the various processing implemented on this processed substrate.
Background technology
In the manufacturing of semiconductor equipment, carry out various semiconductor processes such as film forming, etching, heating, improvement, crystallization repeatedly to processed substrates such as semiconductor wafers.In this semiconductor processes, on the mounting table (pedestal) that processed substrate-placing is disposed in container handling, under this state, processed substrate is handled.In order to carry out processed substrate transporting on mounting table, use elevating mechanism.Usually, this elevating mechanism has the lift pin that is configured in respectively in the through hole that forms in the above-mentioned mounting table.
Fig. 8 is the longitudinal section end view of the part of the substrate elevating mechanism of expression conventional semiconductor processing unit.As shown in Figure 8, on mounting table 138, form the through hole (pilot hole) 150 of a plurality of up/down perforations.Lift pin 152 can freely insert in the pilot hole 150 with coming in and going out.Drive unit by regulation drives lift pin 152, the action of coming in and going out (for example, opening flat 6-318630 communique with reference to the spy) on the mounting surface of mounting table 138.
In the elevating mechanism of this processed substrate, by drive unit lift pin 152 is projected on the mounting surface of mounting table 138, lift processed substrate W from mounting surface.In addition, descend, processed substrate W is positioned on the mounting surface by making lift pin 152.In Fig. 8, the lower end of lift pin 152 just is being supported with being installed under the surperficial state of contact that drives the pin base 156 on the part 154.By driving part 154 is moved up and down, lift pin 152 slides up and down in the inside of pilot hole 150.
Special table 2002-530847 communique also discloses the processing unit with substrate elevating mechanism.In the device of the document, the internal configurations of the through hole that forms on mounting table is carried out the auxiliary tube of lift pin guiding.
Summary of the invention
The objective of the invention is processed substrate is being implemented in the device of semiconductor processes, alleviate because gas turns round problems such as the deposit that produces adheres between lift pin and pilot hole.
A first aspect of the present invention processed substrate is carried out the device of semiconductor processes, possess:
The container handling that holds above-mentioned processed substrate;
Supply with air supply system in the above-mentioned container handling with handling gas;
Be configured in the mounting table in the above-mentioned container handling, above-mentioned mounting table have the upper surface of the above-mentioned processed substrate of mounting and be exposed in the above-mentioned container handling lower surface and
With respect to the above-mentioned upper surface of above-mentioned mounting table, the elevating mechanism that transports of auxiliary above-mentioned processed substrate; Wherein,
Above-mentioned elevating mechanism possesses:
Support the lift pin of above-mentioned processed substrate;
Make the drive part of above-mentioned lift pin lifting;
Guide the pilot hole of the lifting action of above-mentioned lift pin; Above-mentioned pilot hole possesses and connects above-mentioned mounting table, extends to the main aperture part of above-mentioned lower surface and corresponding with above-mentioned main aperture part from above-mentioned upper surface, the elongated pore part of extending in the prolongation sleeve pipe of giving prominence to downwards from the above-mentioned lower surface of above-mentioned mounting table.
The length of the above-mentioned elongated pore part of above-mentioned pilot hole is medium-sized than the length of the above-mentioned main aperture part of above-mentioned pilot hole preferably.In one form, the upper end of above-mentioned auxiliary tube is installed on the above-mentioned lower surface of above-mentioned mounting table, and the above-mentioned prolongation sleeve pipe of all formation of above-mentioned auxiliary tube forms above-mentioned elongated pore part in auxiliary tube.In another form, above-mentioned auxiliary tube is inserted in the through hole of the above-mentioned mounting table of up/down perforation, from the above-mentioned lower surface of above-mentioned mounting table downwards the part of outstanding above-mentioned auxiliary tube form above-mentioned prolongation sleeve pipe, make above-mentioned main aperture part and above-mentioned elongated pore partly in an auxiliary tube, form.
Above-mentioned drive part can be in the lifting of first and second above-mentioned lift pins of state chien shih, can be formed under above-mentioned first state, for transporting of auxiliary above-mentioned processed substrate, above-mentioned lift pin is projected into the above-mentioned upper surface of above-mentioned mounting table, under above-mentioned second state, in order to carry out above-mentioned semiconductor processes, above-mentioned lift pin is kept out of the way the structure under the above-mentioned upper surface of above-mentioned mounting table.
At above-mentioned second state of above-mentioned lift pin, the downside contact point that above-mentioned lift pin contacts with the inner surface of above-mentioned pilot hole is preferably placed at the position that the lower end of above-mentioned prolongation sleeve pipe makes progress.Therefore, can constitute above-mentioned lift pin and have last shaft portion and diameter than the above-mentioned little lower shaft part of shaft portion that goes up, above-mentioned bottom of going up shaft portion forms the structure of above-mentioned downside contact point.
On the outer surface of above-mentioned lift pin, can form annular recessed portion.At above-mentioned second state of above-mentioned lifting pin, above-mentioned annular recessed portion is positioned at the position that the bottom of above-mentioned prolongation sleeve pipe makes progress.On the outer surface of above-mentioned lift pin, can form the length direction slot part.Under above-mentioned second state of above-mentioned lift pin, the position that the bottom that above-mentioned length direction slot part is positioned at above-mentioned prolongation sleeve pipe makes progress.
Description of drawings
Fig. 1 is the longitudinal section end view of the semiconductor processing device of expression first execution mode of the present invention.
Fig. 2 is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of second execution mode that is suitable for.
Fig. 3 is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 3rd execution mode that is suitable for.
Fig. 4 A and Fig. 4 B be for being expressed as the schematic diagram of the structure of existing structure and the 3rd execution mode respectively, is used for the action effect of comparison substrate elevating mechanism.
Fig. 5 A and Fig. 5 B are the schematic diagram of the structure of the structure of the modification of representing the 3rd execution mode respectively and the 3rd execution mode, are used for the action effect of comparison substrate elevating mechanism, and Fig. 5 C is the schematic diagram of a part of VC of enlarged drawing 5B.
Fig. 6 A is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 4th execution mode that is suitable for, and Fig. 6 B is the schematic diagram of a part of VIB of enlarged drawing 6A.
Fig. 7 is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 5th execution mode that is suitable for.
Fig. 8 is the longitudinal section end view of the part of the substrate elevating mechanism of expression conventional semiconductor processing unit.
Fig. 9 A is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 6th execution mode that is suitable for, Fig. 9 B makes the longitudinal section end view of lift pin under the state that rises of the structure of the 6th execution mode for expression, Fig. 9 C is the cross-sectional plan views of lift pin of the structure of the 6th execution mode, and Fig. 9 D is the schematic diagram of a part of IXD of enlarged drawing 9C.
Figure 10 A is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 7th execution mode that is suitable for, Figure 10 B makes the longitudinal section end view of lift pin under the state that rises of the structure of the 7th execution mode for expression, Figure 10 C is the schematic diagram of the part of expression enlarged drawing 10A.
Figure 11 A is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 8th execution mode that is suitable for, and Figure 11 B represents the longitudinal section end view of the structure of the 7th execution mode except that the lift pin.
Embodiment
The present inventor in exploitation process of the present invention, studies the problem of semiconductor processing device with above-mentioned existing substrate elevating mechanism.The result obtains following conclusion.
In elevating mechanism shown in Figure 8, between the inner surface of the outer surface of lift pin 152 and through hole (pilot hole) 150, form gap to a certain degree.By the gap, lift pin 152 can carry out lifting action reposefully in the inside of pilot hole 150.But, when on processed substrate W, carrying out film forming processing etc., handle gas easily from the below of mounting table 138, in above-mentioned gap, turn round.This revolution gas makes on the inner surface of deposit attached to the outer surface of lift pin 152 or pilot hole 150.In addition, this rotating gas might make deposit partly attached to the back portion towards the processed substrate W of the upper opening of pilot hole.
When deposit attached to the inner surface of the outer surface of lift pin 152 or pilot hole 150 on the time, follow the lifting action of lift pin 152, the inner surface CONTACT WITH FRICTION of the outer surface of lift pin and pilot hole.As a result, produce particle, film quality reduces, and handling property is had adverse effect.In addition, deposit hinders the sliding between lift pin 152 and the pilot hole 150, therefore, can cause the action failure of lift pin 152, and for example the engagement of lift pin causes the damage of lift pin and mounting table.
On the other hand, when deposit attached to the back side of processed substrate W on the time, when processed substrate takes out or in operation thereafter, be easy to generate particle.In addition, attached to the deposit on the back side processed substrate W is gone up and produce inclination or distortion etc.At this moment, for example when later on processed substrate W being implemented exposure-processed, can cause the focal shift of exposure figure.
Particularly follow the Highgrade integration of semiconductor equipment in recent years, coverage (coverage) characteristic that film forming is handled (be high asperratio, for example asperratio be can film forming on the inner face in the hole 10 or more the coverage characteristic) must height.Therefore, the deposit that the revolution of anticipation processing gas in through hole 152 causes adheres to more remarkable, and this becomes into a big problem points of membrane treatment appts.
As the countermeasure of the problems referred to above, can reduce the gap between the inner surface of the outer surface of lift pin 152 and pilot hole 150.In the case, the revolution of gas is suppressed, and therefore can alleviate adhering to of above-mentioned deposit.Yet when reducing the gap, be easy to generate the action failure of lift pin 152.Particularly, when on the inner surface of the outer surface of lift pin 152 or pilot hole 150, having deposit to adhere to, more be easy to generate the action failure of lift pin 152.Therefore, in the device of reality, further reduce extremely difficulty of above-mentioned gap.Present situation is that this makes very difficulty of device design.
Below, with reference to the embodiments of the present invention of description of drawings based on this conclusion formation.In the following description, the inscape with roughly the same function and structure is used identical symbolic representation, only carries out repeat specification where necessary.
(first execution mode)
Fig. 1 represents the longitudinal section end view of the semiconductor processing device of first execution mode of the present invention.This semiconductor processing device 20 is the one-tenth membrane treatment appts that form the TiN film on processed substrates such as semiconductor wafer.
Processing unit 20 has the process chamber 22 that is made of aluminum or aluminum alloy.Import the employed spray head 24 of necessary processing gas in the configuration of the top of process chamber 22.Spray head 24 is via the supply pipe 25 that is connected with the top, handles gas (TiCl for example with comprising
4Or NH
3Deng) gas source supply with part 23 and connect.The a plurality of gas ejection ports 26A of formation, 26B below spray head 24.Above-mentioned processing gas is ejected into the processing space S from gas ejection ports.
Inside at spray head 24 forms 2 gas passage 24A, 24B cutting apart differentiation.Gas passage 24A, 24B are communicated with gas jetting hole 26A, 26B respectively, and two kinds of gases are mixed.That is: two kinds of gases are in the inside of spray head 24, and the path by separately is injected into the processing space S, mixes in handling space S at first.
The high frequency electric source 33 that produces the high frequency voltage of 450kHz is connected with spray head 24 via match circuit 35.High frequency electric source 33 and match circuit 35 are supplied with spray head 24 according to the needs of handling with High frequency power.Wherein, the frequency of the High frequency power that high frequency electric source is supplied with is not limited to above-mentioned value, can use frequency arbitrarily such as 13.56MHz.In addition, when forming TiN, do not use High frequency power, only also can film forming with thermal response.
Mounting table 38 by pillar 36 supportings in process chamber 22 disposes with spray head 24 subtends.Mounting table 38 has the upper surface (mounting surface) of mounting wafer W and is exposed to lower surface in the process chamber 22.Mounting table 38 for example is made of potteries such as AlN, and heaters 44 such as electric resistor heating type heater are equipped with in inside.Heater 44 is connected with supply lines 46 in being configured in pillar 36, generates heat by the electric power of supplying with via supply lines 46.
On the sidewall 22A of process chamber 22, form to move into and take out of mouth 28.Take out of that configuration constitutes the family of power and influence 30 to be opened/closed on mouthfuls 28 moving into.Below mounting table 38, on the 22B of the bottom of process chamber 22, form peristome 31.Peristome 31 has than the little opening section of the cross section of mounting table 38 (face profile), overlooks and sees, this opening section is completely contained in the cross section of mounting table 38.Thus, handle the outer circumferential side of gas, in bottom side turns round equably inlet opening portion 31 from mounting table 38.
Downstream at opening 31 constitutes exhaust space 32.Exhaust space 32 forms by the next door 34 that is connected with bottom 22B.Pillar 36 is installed on the bottom 34A in next door 34.Pillar 36 extends in handling space S, supporting mounting table 38.
In exhaust space 32, be provided in exhaust outlet 40 openings on the lower sides in next door 34.Exhaust outlet 40 connects with the blast pipe 42 that is connected with exhaust apparatus 43 such as vacuum pump.Can control the pressure-regulating valve (not shown) of the opening controller of aperture in the middle insertion of blast pipe 42.Pressure-regulating valve is suitably controlled according to the pressure in the process chamber 22.Thus, the pressure in the process chamber 22 can be maintained certain value, or change towards goal pressure.
In mounting table 38, be assembled with the auxiliary elevating mechanism 48 that transports as the wafer W of processed substrate.Elevating mechanism 48 comprises supporting wafer W, makes the lift pin 51 of its lifting (have three in the illustrated example, only represent wherein two among Fig. 1).Lift pin 51 is by Al
2O
3, SiO
2, pottery such as AlN or quartzyly constitute.Elevating mechanism 48 also comprises the pilot hole 49 of the lifting action of guiding lift pin 51.Lift pin 51 can be distinguished up and down and insert in pilot hole 49.
The inside of pilot hole 49 is inserted on the top of lift pin 51, and its underpart is outstanding downwards from prolonging sleeve pipe 66.The bottom of each lift pin 51 usually respectively be installed in framework 54 on support plate 56 contact.The arm 54A of framework 54 is connected and fixed with the drive rod 60 that is configured in the transmission device (actuator) 58 of the downside of chamber bottom 22B.
That is: framework 54, support plate 56, and transmission device 58 and drive rod 60 constitute the drive part of lift pin 51.Telescopic bellows 64 is configured in the outside that drive rod 60 connects the part of chamber bottom 28B.Guarantee the sealing of the perforation process chamber 22 partly of drive rod 60 by bellows 64.
The bottom of lift pin 51 is preferred common under the state that can leave, and contacts and is supported with the drive surface of support plate 56.Because the bottom of lift pin 51 is uncommitted, the stress that reason such as thermal expansion is produced, the moving of bottom by lift pin 51 discharges.In addition, can further reduce the suffered damage of lift pin 51 and pilot hole 49.
Secondly, the effect of the processing unit 20 of said structure is described.At first, remain on the carrying arm (not shown) in wafer W, the family of power and influence 30 by in opened condition and taking out of moves into mouthfuls 28 wafer W is moved in the process chamber 22.At this moment, lift pin 51 becomes from the outstanding state of the mounting surface of mounting table 38.This state can make framework 54 and support plate 56 rise by the driving of transmission device 58, forms by compressing lift pin 51.Then, carrying arm is transported to wafer W the upper end of a plurality of lift pins 51.
Then, the driving by transmission device 58 descends framework 54 and support plate 56.Thus, lift pin 51 also descends by the load of wafer W and the deadweight of pin.When lift pin 51 descends, keep out of the way mounting surface when following, the wafer W on the lift pin 51 is positioned on the mounting surface of mounting table 38.Under keeping out of the way state below the mounting surface, lift pin 51 carries out next semiconductor processes (film forming processing).
In film forming is handled, will be as for example TiCl that handles gas
4And NH
3Spray by spray- hole 26A, 26B from spray head 24.Handle gas and in handling space S, mix,, on the surface of wafer W, form the TiN film by thermal response.At this moment, mounting table 38 is set at the temperature that is enough to produce above-mentioned thermal response, for example 400～700 ℃.The pressure (the interior pressure of container handling) of handling space S for example is set at 40～1333pa (300mmTorr～10Torr).In addition, also High frequency power can be applied between the spray head 24 and mounting table 38 as upper electrode, in handling space S, carry out film forming under the state of generation plasma as lower electrode.
In above-mentioned film forming, handle gas and keep intact by around the mounting table 38, below being arranged in the lower surface 38b of mounting table 38 below space S 2 revolutions, finally discharge from exhaust outlet 40.At this moment, the part of the processing gas in the below space S 2 is invaded inner from the gap (importing position, lower end) between the lower end of the outer surface of lift pin 51 and pilot hole 49.Thus, in pilot hole 49, in the gap that forms around the lift pin 51, have only a spot of deposit to adhere to.
Partial pressure around the lift pin 51 in the pilot hole 49, along with leaving the distance reduction that the lower end imports the position, corresponding with this distance in addition, the adhesion amount of deposit reduces.Therefore, in the present invention, prolong sleeve pipe 66, can increase the length (main aperture part 49a and elongated pore part 49b and) of pilot hole 49 by appending.Thus, the adhesion amount of the partial pressure on the top of pilot hole 49 and deposit reduces than the situation that does not prolong sleeve pipe 66.
For example, when the pressure of film forming processing carries out more than 666.5Pa (5Torr) (high coverage membrance casting condition), the partial pressures in the pilot hole 49 raise.At this moment, the adhesion amount of the deposit in the pilot hole 49 has the whole possibility that increases.But, even in this case, owing to increase the length of pilot hole 49 by prolonging sleeve pipe 66, so the partial pressure in the top of pilot hole 49 reduces fully.As a result, deposit can be attached to the top in the pilot hole 49 and the upper side of lift pin 51.
(second execution mode)
Fig. 2 is the longitudinal section end view of a part that is illustrated in the substrate elevating mechanism of second execution mode that semiconductor processing device shown in Figure 1 is suitable for.In second execution mode, on mounting table 38, form the through hole 50 below the surface penetrates into from it, self form the main aperture part 49a of pilot hole 49 by through hole 50.In addition, corresponding with each through hole 50, the upper end of auxiliary tube 67 is installed on the lower surface of mounting table 38, and auxiliary tube 67 is as the function that prolongs sleeve pipe 66 (with reference to Fig. 1) is all arranged.That is, form the elongated pore part 49b (with reference to Fig. 1) of pilot hole 49 by the axis hole 67a of auxiliary tube 67.
The cone angle of lower shaft part is set in the actuating range of lift pin 52, and the outer surface of lower shaft part 52B is not conflicted with the lower end inward flange of auxiliary tube 67.In addition, the external diameter of lower shaft part 52B is set in the actuating range of lift pin 52, and the outer surface of lower shaft part 52B does not help the lower end inward flange of pipe 67 to conflict with axle.On the other hand, last shaft portion 52A guarantees the good sliding of relative pilot hole 49.Therefore, preferably go up shaft portion 52A and lower shaft part 52B and have identical cross sectional shape (be cylindric or prismatic shape etc.) at axis direction.
In addition, preferred lift pin 52 is made of identical raw material with support plate 56.In the present embodiment, lift pin 52, support plate 56, framework 54 is all used Al
2O
3Constitute Deng ceramic material.
(the 3rd execution mode)
Fig. 3 is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 3rd execution mode that is suitable for.In the 3rd execution mode, on mounting table 38, make the through hole 50X that penetrates into lower surface from upper surface, auxiliary tube 68 inserts its inside.The part of the axis hole 68a of the auxiliary tube 68 by being positioned at mounting table 38 forms the main aperture part 49a of pilot hole 49.In addition, by from the lower surface of mounting table 38 downwards the part of the axis hole 68a of outstanding auxiliary tube 68 form the elongated pore part 49b of pilot hole 49.
As shown in Figure 3, form stage portion 50Xa in the inside of through hole 50X.Stage portion 50Xa is configured near the upper opening (straight below) of through hole 50X.Stage portion 50Xa has stage portion difference face upward.On the other hand, the upper end of auxiliary tube 68 has axis hole 68a, has flange (flange) 68u that can engage with stage portion 50Xa simultaneously.Auxiliary tube 68 inserts among the through hole 50X under flange 68u and state that stage portion 50Xa engages.Auxiliary tube 68 is outstanding from the lower ends downward side of through hole 50X.
Fixed part (tightening parts is nut) 69A, 69B are installed in the auxiliary tube 68, from the lower surface of mounting table 38 outer surface of outstanding part downwards.More specifically, form bolt arrangement 68b in the bottom of auxiliary tube, fixed part is tightened among the bolt arrangement 68b.Fixed part 69A contacts with the lower surface of mounting table 38, by the flange 68u and the fixed part 69A clamping mounting table 38 of auxiliary tube 68.Thus, auxiliary tube 68 is tightened and is fixed on the mounting table 38.Installing and fixing parts (locking nut) 69B is in order to keep fixed part 69A lenitively.Wherein fixed part needs only fixedly auxiliary tube 68.
The inside that auxiliary tube 68 inserts through hole 50X, outstanding downwards from the inside of through hole 50X.Therefore, installation and the positioning operation of auxiliary tube 68 on mounting table 38 is easy.In addition, can also increase the installation strength of auxiliary tube 68.
In addition, joint by stage portion 50Xa and flange 68u and mounting table 38 engage with fixed part 69A's, and auxiliary tube 68 can be fixed on the mounting table 38 under the state that freely loads and unloads.Therefore, can exchange and clean auxiliary tube 68, maintainability improves.
In addition, 52 on lift pin passes through auxiliary tube 68 guiding, and only the inner face with respect to auxiliary tube 68 slides.Therefore, only bear, expensive mounting table 38 is sustained damage by auxiliary tube 68 by the damage that lift pin 52 causes.
(effect of first～the 3rd execution mode)
Below, the common action effect of detailed description first～the 3rd execution mode.Fig. 4 A and 4B are the schematic diagram of action effect that is expressed as the structure of more existing structure and the 3rd execution mode.Fig. 4 B only represents the 3rd execution mode, also can obtain the effect same with first and second execution modes.
In above-mentioned each embodiment, pilot hole 49 constitutes by the main aperture part 49a that is positioned at mounting table 38 with from the elongated pore part 49b that main aperture part 49a extends downwards.Therefore, the length L P of pilot hole 49
1Length L P for the length L P of main aperture part 49a (identical) and elongated pore part 49b with the length L P of existing pilot hole 150
2Sum.Here, length L P
2Be preferably more than the LP/2.By this structure, make that in pilot hole 49 invade even gas imports position G from the lower end, on top, gap, partial pressure is also low than existing.As a result, deposit is difficult on the upper inside surface attached to the outer surface of upper of lift pin 52 and pilot hole 49.In addition, deposit reduced or eliminated to adhering to also of wafer W back portion (towards the part of the upper opening of pilot hole 49).
Particularly, by reducing the adhesion amount of deposit on the top of lift pin, can reduce significantly when the outstanding action of lift pin, produce to handling harmful particle.That is: can suppress to dance in the air to the mounting surface top of mounting table 38 attached to the deposit of the upper inside surface of the top of lift pin 52 or pilot hole 49.In addition, can prevent the back side of deposit attached to wafer W.Therefore, can further reduce particle, simultaneously, can eliminate inappropriate problem in the subsequent handling of this wafer W.For example, in photo-mask process,, the local possibility that skew takes place of focus of exposure figure is arranged when owing to make wafer W when distortion attached to the deposit on the part at the back side.
In addition, lift pin 52 is by constructing big in fact LP than having now
2Length L P
1Pilot hole 49 lead at above-below direction.Therefore, the sliding in the time of can improving lift pin 52 knee-actions.For example, even the clearance C R between lift pin 52 and the pilot hole 49 is identical with the gap between the pilot hole 150 with the lift pin 152 of existing structure, increase LP by the guiding length that makes lift pin 52
2, can reduce the inclination angle of lift pin 52.Therefore, the lift pin 152 of lift pin 52 comparable existing structures slides at above-below direction more reposefully.
Increase the length L P of the elongated pore part 49b of pilot hole 49 more
2, above-mentioned effect is remarkable more.But the necessary length that increases the lift pin must make the size up and down of process chamber 22 also increase.Therefore, preferably suitably set the length L P of elongated pore part 49b corresponding to contents processing
2
For example, under the coverage characteristic that film forming the is handled situation corresponding,, LP/CR＞AP is set up for clearance C R, the distance L P between lift pin 52 and the pilot hole 49 with asperratio AP.Thus, can reduce attached to deposit towards the back portion of the wafer W of the upper opening of pilot hole 49.For example, can suppose that the length of the main aperture partial L P of pilot hole 49 is 18mm, clearance C R is at full Zhou Shangwei 0.2mm, the length L P of the prolongation 49b of pilot hole 49
2Situation for 15mm.At this moment, when not having prolongation 49b, LP/CR=90 is littler than asperratio AP=100.When elongated pore part 49b, LP
1/ CR=165, AP=100 increases significantly with respect to asperratio.
In order to obtain and above-mentioned same effect, can make mounting table 38 thickenings, increase the length of through hole 50 itself.But when thickening mounting table 38, essential a large amount of ceramic raw materials that use high price simultaneously, must add section chief's through hole 50.Therefore, manufacturing cost improves greatly.In addition, when forming thick mounting table 38, by heater 44 (or opposite cooling device) mounting surface is carried out temperature control difficulty, temperature homogeneity reduces, and influences the uniformity that film forming is handled.In addition, because the thermal capacity of mounting table increases heating, increase circulation timei of cooling, treatment effeciency reduction.
Fig. 5 A and 5B represent to be used for the schematic diagram of the structure of the mechanism of variation of the 3rd execution mode of action effect of comparison substrate elevating mechanism and the 3rd execution mode respectively.Fig. 5 C is the schematic diagram of a part of VC of enlarged drawing 5B.
In the 3rd execution mode that Fig. 5 B represents, lift pin 52 has the shape that is made of the columniform lower shaft part 52B that goes up shaft portion 52A and taper.On the other hand, in the modification shown in Fig. 5 A, lift pin 51 has the roughly straight shape shape and the indeclinable shape of area of axis direction cross section (that is).Owing between lift pin 51,52 and pilot hole 49, can make 51,52 liftings of lift pin, certainly exist clearance C R.Therefore, with respect to drive unit freely under the situation, the axis of lift pin 51,52 has little inclination with respect to the axis CX of pilot hole 49 at lift pin 51,52.
Fig. 5 A represents that the lift pin 51 of straight shape slides as mentioned above, becomes the state of inclination attitude.Under this state, the bottom of lift pin 51 and support plate 56 contact supporting point A in position that the axis CX than pilot hole 49 is offset a little.In addition, lift pin 51 contacts with pilot hole 49 with contact point C place, bottom at top contact point B.When under this state, when framework 54 was risen, support plate 56 was added in thrust upward on the lift pin 51.But under the state that contact point A, B, C fix, lift pin 51 does not rise, and produces engagement.According to circumstances different, lift pin 51 or auxiliary tube 68 are in contact point B place, bottom damaged.
In the case, because lift pin 51 rises, contact supporting point A on the direction shown in the arrow (promptly near axis CX direction), moves on support plate 56 in the drawings, and the inclination angle of lift pin 51 must change.At this moment, make contact supporting point A easily under the situation that the direction of arrow moves in the thrust that produces by support plate 56, lift pin 51 can rise.But relevant with the surface roughness of the contact-making surface of contact supporting point A etc., the resistance to sliding of lift pin 51 on the contact supporting point A on the support plate 56 is big.If contact supporting point A does not move, then as mentioned above, lift pin 51 produces motor defect.
On the other hand, shown in Fig. 5 C, between shaft portion 52A on the lift pin 52 and lower shaft portion 52B, form the stage portion difference 52f of portion.The stage portion difference 52f of portion to the lower shaft portion 52B of downside have diameter than on axial region 52A little, more downwards, the tapering shape that diameter dwindles more.Even when last lift pin 52 was gone up in the lower position of its actuating range (shown position), the border 52e between last axial region 52A and the lower shaft portion 52B also was configured in the pilot hole 49 (promptly above the inward flange 68e of the lower end of auxiliary tube 68).In addition, lower shaft portion 52B forms straight line downwards at the downside of stage portion difference part 52f and also can.
Fig. 5 B represents the contact point A1 of lift pin 52 at support plate 56, and top contact point B1 contacts the contact condition on 3 of the C1 with the bottom.Contact supporting point A1 and above-mentionedly similarly be offset from axis CX.Bottom contact point C1 when rising with tank bracket 54, synchronously is moved upward on lift pin 52.At this moment, even contact supporting point A1 does not move on support plate 56, lift pin 52 still can rise.This is because in the way that lift pin 52 rises, its outer surface does not contact with the lower end inward flange 68e of auxiliary tube 68.
That is, the diameter that lift pin 52 constitutes lower shaft part 52B is littler than last shaft portion 52A, but its lower shaft part 52B more downwards, and diameter is more little, forms taper.Therefore, till the upper limit position of its actuating range, do not contact with lower end inward flange 68e.Thus, lift pin 52 is kept its inclination attitude, can continue to rise to the upper limit position of its actuating range.
As mentioned above, in the 3rd embodiment, the lower shaft part 52B of lift pin 52 not with the following end in contact of pilot hole 49.Therefore, must set the stage portion residual quantity of stage portion difference part 52f and the tapering angle of lower shaft part 52B according to the situations such as actuating range, clearance C R and distance L P of lift pin 52.
As mentioned above, clearance C R very little (for example, on full week, being approximately 0.2mm), so the inclination angle of lift pin is also little.Therefore, mutually interdependent with the actuating range of lift pin.Usually the tapering angle of the stage portion residual quantity of stage portion difference part 52f and lower shaft part 52B is also very little just enough.For example, be about 0.1～1.0mm as above-mentioned stage portion residual quantity.As above-mentioned tapering angle is about 0.5～3.0 °.
In first～the 3rd execution mode, comprise by prolonging the elongated pore part 49b that sleeve pipe 66 (in the second and the 3rd execution mode, being made of auxiliary tube 67,68) forms by pilot hole 49, the guiding length of the lifter pin of formation is long.Therefore, when comparing with existing structure, under identical clearance C R, the angle of inclination of lift pin is little.As a result, under the modification shown in Fig. 5 A (for example, using the situation of the lift pin 51 of straight shape), also be difficult to produce the motor defect of lift pin even suppose.But, in this case,, on auxiliary tube 68, burden is arranged being easy to generate under the situation shown in Fig. 5 A of motor defect.Therefore, the structure of preferred the 3rd execution mode (promptly using the structure of lift pin 52).
In addition, utilize the stage portion amount of above-mentioned condition and stage portion difference part 52f, even only form stage portion difference part 52f, lower shaft part 52B also can aforesaidly move for being not the straight shape of tapering shape.In addition,, stage portion difference part 52f is not set, only lower shaft part 52B is made taper, can move as described above yet by above-mentioned condition and coning angle.In the latter case, preferably on the border (starting point of tapering shape) between last shaft portion 52A and the lower shaft part 52B, has suitable curvature.
The length of the last shaft portion 52A of lift pin 52 can be set at the length of pilot hole 49 about equally, or than its slightly short length.When lift pin 52 during at upper limit position, set the length of lower shaft part 52B, the stage portion difference part 52f between shaft portion 52A and the lower shaft part 52B is not given prominence on the mounting surface of mounting table 38.
(the 4th execution mode)
Fig. 6 is the longitudinal section end view of a part that is illustrated on the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 4th execution mode that is suitable for.Fig. 6 B is the schematic diagram of a part of VIB of amplification presentation graphs 6A.In the 4th execution mode, lift pin 51 is roughly straight shape, and on the other hand, near the inner surface the bottom of auxiliary tube 70 is open downwards.In this structure, lift pin 51 can move up and down in auxiliary tube 70 reposefully.
That is, auxiliary tube 70 has the shape of the in a taper shape or horn-like opening of lower inner surface 70c downwards.In the case, the bottom contact point C2 of the outer surface of lift pin 51 is positioned on the top inner surface of lower end inward flange 70e of auxiliary tube 70.Therefore, when lift pin 51 rises, on the contact point C2 of bottom, do not bear big stress.As a result, can prevent the engagement of lift pin 51 or the damage of lift pin 51 and auxiliary tube 70.
(the 5th execution mode)
Fig. 7 is the longitudinal section end view of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 5th execution mode that is suitable for.In the 5th execution mode, the lift pin 52 of lift pin 62 and the 3rd execution mode is similar, but on the mid portion of its outer surface, has the annular recess 62d that forms at circumferencial direction.Identical in the structure of the structure of the 5th execution mode beyond lift pin 62 with the 3rd enforcement.
In carrying out the process chamber 22 that film forming handles, under the differential pressure drop of handling gas was low to moderate to a certain degree situation, reacted in the concentrated area, produces deposit sometimes.Comparing the film forming with the favourable high coverage characteristic of suitable the second and the 3rd execution mode handles (in the case, pressure in the process chamber 22 is that 93.3～1333Pa (is about 0.7～10Torr), than higher), during film forming with low coverage characteristic is handled (in the case, pressure in the process chamber 22 is the lower low pressure event of 20～80Pa), be easy to generate this situation.
The environment of this situation takes place in, import the dividing potential drop of the gas that position G enters from the lower end shown in Fig. 4 B, reduce along with the top that enters the gap.Therefore, importing from the lower end on the distance of position G regulation, on the inner surface of deposit concentrated area attached to the outer surface of lift pin 52 or pilot hole 49.At this moment, the deposit that adheres in a large number partly causes to produce on the lift pin 52 to move to fall and hinders.
In the 5th execution mode,, on the axis direction assigned position of the outer surface of lift pin 62, form annular recess 62d according to membrance casting condition, mounting table and near environment such as structure thereof.At this moment, because the deposit concentrated area, can prevent that deposit from causing the motor defect that produces lift pin 62 attached to the inside of annular recess 62d.
Annular recessed portion 62d is configured on the part of the lift pin 62 that is configured in pilot hole 49 inside when handling.The part of this part for leaving to the predetermined distance top from lower end importing position G, but as mentioned above, should be different because of processing environment to set a distance.Therefore, can under each processing environment, suitably set.
In first to the 5th execution mode, any in the lift pin 51,52,62, on its outer surface, and the outer surface part of in the inner surface of pilot hole 49, sliding, comparable existing lift pin constitutes smoothly.
Prior art owing to be difficult to peel off deposit attached on the lift pin outer surface, makes thick surperficial shape with the outer surface of lift pin, perhaps, dare not carry out milled processed etc.The surface roughness Ra of the outer surface of existing lift pin is approximately more than the 1.5 μ m.Like this, when the lift pin rises, when being projected on the mounting surface of mounting table, can not peel off attached to the deposit on lift pin top.When peeling off deposit, above the mounting surface of mounting table, emit particle, processing environment is worsened.
On the other hand, in first～the 5th execution mode, because deposit hardly attached to the top of lift pin, therefore, has reduced the possibility of emitting particle above mounting table significantly.Therefore, even do the outer surface part of lift pin 51,52,62 smoothly, deposit can not peeled off from the top of lift pin yet.Like this,, the resistance to sliding of lift pin can be reduced, simultaneously, the probability of lift pin generation motor defect can be further reduced by making surface smoothing.
As the embodiment of above-mentioned execution mode, by all being carried out attrition process in addition, the bottom (part that contacts with the pin bottom) of lift pin make it level and smooth, its surface roughness Ra can be made about 0.20～0.3 μ m.When the surface roughness of lift pin is 1.0 μ m when following, the effect of surface smoothing is obvious, when surface roughness Ra when 0.5 μ m is following, can obtain more significant effect.But under the situation of ceramic, reduce the surface roughness Ra difficulty.Therefore, most preferably the surface roughness Ra of lift pin is set in 0.1～0.5 mu m range.
In addition, can make the inner surface of pilot hole also level and smooth, make its surface roughness Ra below 1 μ m.Thus, can guide moving up and down of lift pin more sleekly.At the inner surface of pilot hole,, more preferably make surface roughness Ra below 0.5 μ m with above-mentioned same.Thus, preferably the surface roughness of pilot hole is set in the scope of 0.1～0.5 μ m.
(the 6th execution mode)
Fig. 9 A is the longitudinal section side figure of a part that is illustrated in the semiconductor processing device shown in Figure 1 the substrate elevating mechanism of the 6th execution mode that is suitable for.Fig. 9 B makes the longitudinal section end view of the state that the lift pin of the structure of the 6th execution mode rises for expression.Fig. 9 C is the transversal plane of lift pin of the structure of the 6th execution mode.Fig. 9 D is the schematic diagram of a part of IXD of amplification presentation graphs 9C.In the 6th execution mode, the lift pin 52 of lift pin 72 and the 3rd embodiment is similar, has the surface groove 72x that forms along long side direction on its outer surface.The structure of the 6th execution mode is in the structure beyond lift pin 72, identical with the 3rd embodiment.
In addition, the structure of the surface groove described later of the 6th execution mode and the described later the 7th and the 8th execution mode and characteristics thereof can be used in first and second execution modes and other modes equally.When the pilot hole that inserts the lift pin is formed by the auxiliary tube in whole insertion mounting tables 38 and when being combined to form by through hole of on mounting table 38, making and auxiliary tube, can be with following characteristics combination.
Shown in Fig. 9 A, on the outer peripheral face of lift pin 72, form surface groove 72x along long side direction.On the orbital direction of lift pin 72, form a plurality of surface groove 72x at certain intervals.More particularly, around the axis of lift pin 72, form a plurality of surface groove 72x at interval with equal angles.Surface groove 72x preferably thinks that adhering to the maximum field Xa of deposit extends from the top in lift pin 72.In the example shown in Fig. 9 A, surface groove 72x reaches regional Xa from the top.
In addition, shown in Fig. 9 A, preferred surface groove 72x under the front end of lift pin 72 submerges the internal state (position of the lift pin during film forming) of axis hole 68a, the position on being formed on from the top of the part in the axis hole 68a that is configured in lift pin 72 to central part.And for example shown in Fig. 9 B, when lift pin 72 rises, the top of preferred surface groove 72x highlights from the upper surface of mounting table 38, in the 6th execution mode, last shaft portion 72A and lower shaft part 72B are configured on the lift pin 72, and surface groove 72x is formed on the outer peripheral face of shaft portion 72A.
Shown in Fig. 9 C and Fig. 9 D, each surface groove 72x is in the outer peripheral face upper shed of lift pin 72.Surface groove 72x has increased the sectional area in the space between lift pin 72 and the auxiliary tube 68.Therefore, in cleaning process,, when removing deposit, can improve the dividing potential drop of clean air in the depths, rear portion in gap when by clean air being supplied with container handling inside.Thus, can remove more expeditiously attached to the deposit on the inner surface of lift pin 72 and auxiliary tube 68.
Particularly, on the regional Xa of most deposits attached to lift pin 72.In existing structure, the deposit of removing regional Xa is very difficult.In the 6th execution mode,, can improve the dividing potential drop of the clean air of this zone Xa because surface groove 72x extends (more particularly, arriving regional Xa) towards regional Xa.Like this, can remove deposit effectively.
For example, using TiCl
4And NH
3As reacting gas, when forming the TiN film, can use ClF
3Or NF
3Deng as the clean air that in cleaning process, uses.This cleaning process is when the deposit as many as in the container handling carries out to a certain degree the time.Behind cleaning process, preferably by not with substrate-placing on mounting table, the reacting gas kind is flowed, can in container handling, be carried out to membrane material or the coating in advance that is accumulated to is to a certain degree handled.Then, carrying out common film forming handles.
Shown in Fig. 9 B, in cleaning process, make the top of surface groove 72x be projected into the top of mounting table 38.Like this, by surface groove 72x, clean air diffuses between lift pin 72 and the auxiliary tube 68 easily.Wherein, in the middle of cleaning process, also can change the upper-lower position of lift pin 72.
By increasing the gap between lift pin and the pilot hole, can improve the dividing potential drop of the clean air in this gap.Can reduce the external diameter of lift pin for this reason simply, perhaps increase the internal diameter of axis hole.But, utilize the method, by increasing gap, the inclination angle (chamfering) that can increase the lift pin.But, utilize this method, by increasing the gap, increase the inclination angle (chamfering) that lift adds the hot elevator pin.At this moment, the resistance to sliding of lift pin increases, and it is bad to be easy to generate the action of lift pin.
Relative therewith, in the 6th execution mode,, can improve the dividing potential drop of clean air by on lift pin 72, forming surface groove 72x.At this moment, owing to make the gap increase the inclination angle that can not increase the lift pin hardly.
In addition, surface groove 72x is configured in the first half (more particularly, in the top position of supposing the regional Xa that deposit is maximum) of lifter pin 72.Therefore, in the time of can increasing film forming hardly, top that is configured in lift pin 72 that the film forming gas of invading from the mounting table below causes or the deposit on the substrate back on the mounting table 38.That is, the lower end of surface groove 72x is positioned at the top of the lower end of pilot hole 49.Thus, the film forming gas that enters from the lower end of pilot hole 49 can not pass through surface groove 72x, guides to the top of axis hole.
In the 6th execution mode, the upper end of surface groove 72x is configured on the position of the degree below, upper end of leaving lift pin 72.Thus, the gas that enters from the lower end of pilot hole 49 during film forming is difficult to arrive the upper end of lift pin 72.Thereby can reduce amount attached to the deposit on substrate (wafer) back side.
Shown in Fig. 9 D, when the A/F 72xw of surface groove 72x increases, in the angular range of A/F 72xw, there is not the outer peripheral face of lift pin 72.Thus, the radius of lift pin 72 reduces by a little Δ D.A/F 72xw increases more, and this radius decrease Δ D increases sharp.That is: when A/F 72xw increased to a certain degree, the gap increased on the direction that surface groove 72x forms, and the chamfering of lift pin 72 increases.As a result, cause the probability that resistance to sliding increases and the generation action is bad of lifter pin 72 to increase.
Therefore, preferably within the specific limits with A/F 72xw restriction, so that it is bad can not to produce the action of lifter pin 72.For example, if the gap when surface groove 72x is not set is CR, 10% of the Δ D ratio gap CR of then preferred actual A/F 72xw, more preferably 5% A/F value is little.Like this, A/F 72xw is limited in to a certain degree, can increases the quantity of surface groove 72x or the degree of depth 72xd of increase surface groove 72x, can guarantee around the lift pin, to have the space of the sectional area that fully makes the clean air diffusion like this.
In the example shown in Fig. 9 C, the cross sectional shape of surface groove 72x is near foursquare rectangle.In order to promote the diffusion of clean air in surface groove, the cross sectional shape of preferred surface groove 72x is as far as possible approaching foursquare shape.For example, the A/F 72xw of surface groove 72 and the ratio of degree of depth 72xd are preferred 0.5～2.0, and more preferably 0.75～1.5.
In addition, utilize surface groove 72x to make the sectional area in the space between lift pin 72 and the pilot hole 49 increase to what kind of degree, can be according to the conditional decision of cleaning process.For example, when not establishing surface groove 72x, when the sectional area in the above-mentioned space corresponding with clearance C R was CS, by configuration surface groove 72x, the increase of above-mentioned space sectional area was preferably 50%～200% of this sectional area CS, and more preferably about 75～150%.
When the increase of the sectional area that is brought by surface groove 72x is lower than above-mentioned scope, can not fully obtain by forming the cleaning effect that surface groove 72x obtains.On the contrary, when surpassing above-mentioned scope, the A/F 72xw of surface groove 72x increases, and the radius decrease Δ D of lift pin is big.Under the above-mentioned latter's situation, the essential number that increases surface groove 72x, or the degree of depth 72xd of increase surface groove 72x, it is difficult that the processing of lift pin 72 becomes.
The condition with high coverage characteristic (for example, the pressure of container handling is when carrying out film forming under 93.3～1333Pa), deposit easily attached in the lift pin 72 on the more inner part of mounting table or sleeve pipe.At this moment, the structure of lift pin 72 is effective removing on this aspect of all attachments that comprises on the part of the inside equably.(for example, the pressure in the container handling is under 20～80Pa), when carrying out film forming, has a large amount of deposits to concentrate attached to the tendency on the specific region of mounting table or inside pipe casing as mentioned above in the condition with low coverage characteristic.At this moment, the structure of lift pin 72 is effective on removing attached to the bulk deposition object point on this zone expeditiously.
(the 7th execution mode)
Figure 10 A is the longitudinal section end view of the part of the substrate elevating mechanism of the 7th execution mode that can use in semiconductor processing device shown in Figure 1.Figure 10 B is the longitudinal section end view of the state of the lift pin rising of the structure of expression the 7th execution mode.Figure 10 C is the figure of the part of amplification presentation graphs 10A.In the 7th execution mode, on lift pin 82, form annular recessed portion 82d with the 5th execution mode same structure.Above annular recessed portion 82d, be formed with surface groove 82x.
More particularly, surface groove 82x is communicated with annular recessed portion 82d from the top.Annular recess 82d and above-mentioned same is formed in the outer peripheral face of lift pin 82 of anticipation the zone that the adhesion amount of deposit is maximum (zone identical with the regional Xa of the 6th execution mode).That is: it is bad that annular recessed portion 82d can prevent to be adhered to by deposit the action of the lift pin 82 that causes.Because surface groove 82x is communicated with annular recessed portion 82d from the top, utilize clean air by surface groove 82x diffusion, (in shorter time) removed attached to the deposit in the annular recessed portion 82d more efficiently.
In the 7th execution mode, the number of surface groove 82x, shape, size etc. can constitute equally with the surface groove 72x in the 6th execution mode.
In the 7th execution mode, last axial region 82A and lower shaft portion 82B are configured on the lift pin 82, and surface groove 82x is formed on the outer peripheral face of shaft portion 82A.Surface groove 82x forms the upper end that reaches lift pin 82 or near the upper end, upward opening.Like this, the top of surface groove 82x is only outstanding with the little ascending amount of lift pin 82 from mounting table 38.That is: in cleaning process, can remove the attachment on the lift pin 82 effectively.
(the 8th execution mode)
Figure 11 A is the longitudinal section end view of the part of the substrate elevating mechanism of expression the 8th execution mode that can use in semiconductor processing device shown in Figure 1.Figure 11 B represents to remove outside the lift pin, the longitudinal section end view of the structure of the 7th execution mode.The 8th execution mode shown in Figure 11 B, is with the difference of the 6th execution mode and the 7th execution mode: form on the top inner peripheral surface of the axis hole 98a of surface groove 92x in the auxiliary tube 98 that can insert the lift pin.Auxiliary tube 98, the auxiliary tube 68 with the 3rd execution mode except forming surface groove 92x is identical.In addition, the structure of the 8th execution mode, the structure except that auxiliary tube 98 is identical with the 3rd execution mode.
By configuration surface groove 92x, in cleaning process, can make clean air diffuse to axis hole 98a inside, improve its dividing potential drop.Thus, can remove expeditiously attached to the deposit on the lift pin 52 shown in Figure 11 A.No matter particularly and the upper-lower position of lift pin 52 how, can make clean air with higher dividing potential drop diffuse to the lift pin around.Thus, can remove deposit expeditiously.
In addition, surface groove 92x is not limited to auxiliary tube 98, when being useful in second execution mode, can be set directly in the through hole of mounting table.In addition, also can arbitrarily on the mounting table, be arranged in the pilot hole arbitrarily that inserts the lift pin at other.
In the 8th execution mode, also can on the lift pin, form annular recessed portion equally with the 7th execution mode.At this moment, on the position of the lift pin when film forming, under promptly the front end of lift pin submerged state in the axis hole, the position relation of this annular recessed portion and surface groove was preferably identical with the 7th execution mode with connectivity structure.Also can on the inner peripheral surface of axis hole, form annular recessed portion.At this moment, the position relation of preferred annular recessed portion and surface groove is also identical with the 7th execution mode with connectivity structure.
In the above-described embodiments, semiconductor processing device 20 constitutes as the one-tenth membrane treatment appts that forms the TiN film on processed substrates such as semiconductor wafer.But the present invention avoids being produced effect by the variety of issue that the revolution of handling gas causes in various processing unit.That is: the present invention can or become in the membrane treatment appts various semiconductor processing devices in addition at the one-tenth membrane treatment appts that forms TiN various films in addition to be suitable for.For example, in the corrosion that prevents the sliding surface between lift pin and the pilot hole with towards the corrosion aspect at the processed substrate position of the upper opening of pilot hole, also effective on processing unit etc. at etch processes device, surfaction.In addition, as processed substrate, except that semiconductor wafer, also can use substrate that LCD or FPD use etc.
The possibility of utilizing on the industry
Adopt the present invention, can subtract in the device of semiconductor processes in that processed substrate is carried out The events such as few deposit that causes owing to the revolution of gas between lift pin and pilot hole adheres to Barrier.
Claims (14)
1. one kind is carried out the device of semiconductor processes to processed substrate, has:
The container handling that holds described processed substrate;
Supply with air supply system in the described container handling with handling body gas;
Be configured in the mounting table in the described container handling, described mounting table has the upper surface of the described processed substrate of mounting and is exposed to the interior lower surface of described container handling; With
The described upper surface of described relatively mounting table, the auxiliary elevating mechanism that transports that carries out described processed substrate;
Wherein, described elevating mechanism has:
Support the lift pin of described processed substrate;
Make the drive division of described lift pin lifting; With
Guide the pilot hole of the lifting action of described lift pin, described pilot hole has the described mounting table of perforation, extends to the main aperture part of described lower surface from described upper surface; With corresponding with described main aperture part, the elongated pore part of extending in the prolongation sleeve pipe of giving prominence to downwards from the described lower surface of described mounting table;
Described main aperture part and described elongated pore partly are formed in the auxiliary tube, described auxiliary tube are inserted in the through hole of the described mounting table of up/down perforation, and the part of the described auxiliary tube of giving prominence to downwards from the described lower surface of described mounting table forms described prolongation sleeve pipe.
2. device as claimed in claim 1 is characterized in that, the length of the described elongated pore part of described pilot hole is one more medium-sized than the length of the described main aperture part of described pilot hole.
3. one kind is carried out the device of semiconductor processes to processed substrate, has:
The container handling that holds described processed substrate;
Supply with air supply system in the described container handling with handling body gas;
Be configured in the mounting table in the described container handling, described mounting table has the upper surface of the described processed substrate of mounting and is exposed to the interior lower surface of described container handling; With
The described upper surface of described relatively mounting table, the auxiliary elevating mechanism that transports that carries out described processed substrate;
Wherein, described elevating mechanism has:
Support the lift pin of described processed substrate;
Make the drive division of described lift pin lifting; With
Guide the pilot hole of the lifting action of described lift pin, described pilot hole has the described mounting table of perforation, extends to the main aperture part of described lower surface from described upper surface; With corresponding with described main aperture part, the elongated pore part of extending in the prolongation sleeve pipe of giving prominence to downwards from the described lower surface of described mounting table;
Described elongated pore partly is formed in the auxiliary tube, and the upper end of described auxiliary tube is installed on the described lower surface of described mounting table, forms described prolongation sleeve pipe by described auxiliary tube all.
4. device as claimed in claim 1 is characterized in that, further has upper end that is configured in described auxiliary tube and the flange that engages with described mounting table; With contact the fixed part that engages simultaneously with the outer surface of described auxiliary tube with the described lower surface of described mounting table; By the interoperation of described flange and described fixed part, described auxiliary tube is fixed on the described mounting table.
5. device as claimed in claim 1, it is characterized in that, described drive part can be in the lifting of first and second described lift pins of state chien shih, under described first state, for transporting of auxiliary described processed substrate, described lift pin is projected into the described upper surface of described mounting table, under described second state, in order to carry out described semiconductor processes, described lift pin is kept out of the way under the described upper surface of described mounting table;
Under described second state, described lift pin contacts with described pilot hole at the contact point place of upside and downside, described downside contact point be positioned at described prolongation sleeve pipe the bottom above.
6. device as claimed in claim 5 is characterized in that, described lift pin has last axial region and diameter than the described little lower shaft portion of axial region that goes up, and described bottom of going up axial region forms described downside contact point.
7. device as claimed in claim 6 is characterized in that, described lower shaft portion has the diminishing taper of diameter downwards.
8. device as claimed in claim 1 is characterized in that, the diameter of the inner surface of the described elongated pore part of described pilot hole enlarges downwards gradually.
9. device as claimed in claim 1, it is characterized in that, described drive part can be in the lifting of first and second described lift pins of state chien shih, under described first state, for transporting of auxiliary described processed substrate, described lift pin is projected into the described upper surface of described mounting table, under described second state, in order to carry out described semiconductor processes, described lift pin is kept out of the way under the described upper surface of described mounting table;
Form annular recessed portion at the outer surface of described lift pin, under described second state of described lifting pin, described annular recessed portion be positioned at described prolongation sleeve pipe the bottom above.
10. device as claimed in claim 1, it is characterized in that, described drive part can be in the lifting of first and second described lift pins of state chien shih, under described first state, for transporting of auxiliary described processed substrate, described lift pin is projected into the described upper surface of described mounting table, under described second state, in order to carry out described semiconductor processes, described lift pin is kept out of the way under the described upper surface of described mounting table;
On the outer surface of described lift pin, form the length direction slot part, under described second state of described lift pin, described length direction slot part be positioned at described prolongation sleeve pipe the bottom above.
11. device as claimed in claim 1 is characterized in that, at the inner surface formation length direction slot part of described auxiliary tube.
12. device as claimed in claim 1 is characterized in that, the bottom of described lift pin can contact with the drive surface of described drive division dividually.
13. device as claimed in claim 1 is characterized in that, further has the pillar of the described mounting table of supporting, described mounting table is bearing on the described container handling by described pillar.
14. device as claimed in claim 13 is characterized in that, described container handling has the exhaust side space that forms below the described lower surface of described mounting table, and the face profile in this space is littler than described mounting table, and surrounds described pillar; The gas extraction system of described container handling inside being carried out vacuum exhaust is connected with described exhaust space.
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| CN101899715B (en) * | 2009-05-25 | 2013-02-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing device and thimble lifting device thereof |
| US8034723B2 (en) * | 2009-12-25 | 2011-10-11 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
| JP5562065B2 (en) * | 2010-02-25 | 2014-07-30 | Ｓｐｐテクノロジーズ株式会社 | Plasma processing equipment |
| JP6520050B2 (en) * | 2014-10-31 | 2019-05-29 | 株式会社Sumco | Lift pin, epitaxial growth apparatus using the lift pin and method of manufacturing epitaxial wafer |
| JP6507573B2 (en) * | 2014-10-31 | 2019-05-08 | 株式会社Sumco | Lift pin, epitaxial growth apparatus using the lift pin and method of manufacturing epitaxial wafer |
| KR101548903B1 (en) | 2015-03-19 | 2015-09-04 | (주)코미코 | Lift pin and method for manufacturing the same |
| JP6435992B2 (en) * | 2015-05-29 | 2018-12-12 | 株式会社Sumco | Epitaxial growth apparatus, epitaxial wafer manufacturing method, and lift pin for epitaxial growth apparatus |
| JP6451508B2 (en) * | 2015-05-29 | 2019-01-16 | 株式会社Sumco | Epitaxial growth apparatus, epitaxial wafer manufacturing method, and lift pin for epitaxial growth apparatus |
| JP6596362B2 (en) * | 2015-12-02 | 2019-10-23 | 東京エレクトロン株式会社 | A processing device for processing a workpiece in a decompressed space |
| US10381258B2 (en) | 2015-12-02 | 2019-08-13 | Tokyo Electron Limited | Apparatus of processing workpiece in depressurized space |
| JP6383389B2 (en) * | 2016-07-22 | 2018-08-29 | 東京エレクトロン株式会社 | Mounting table |
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| JP3940190B2 (en) * | 1996-09-30 | 2007-07-04 | 松下電器産業株式会社 | Vacuum processing equipment |
| JPH1116858A (en) * | 1997-06-21 | 1999-01-22 | Tokyo Electron Ltd | Method of cleaning and processing film forming device |
| JP2001210597A (en) * | 2000-01-28 | 2001-08-03 | Hitachi Kokusai Electric Inc | Manufacturing apparatus for semiconductor, and method of manufacturing semiconductor device |
| JP4477784B2 (en) * | 2001-02-02 | 2010-06-09 | 東京エレクトロン株式会社 | Placement mechanism of workpiece |
| JP4111703B2 (en) * | 2001-10-19 | 2008-07-02 | アプライド マテリアルズ インコーポレイテッド | Wafer lift mechanism |
| JP2004063865A (en) * | 2002-07-30 | 2004-02-26 | Shin Etsu Handotai Co Ltd | Manufacturing method of susceptor, vapor phase depoisition device, and epitaxial wafer |
| JP4412640B2 (en) * | 2003-07-24 | 2010-02-10 | 奇美電子股▲ふん▼有限公司 | Substrate processing equipment |
-
2004
- 2004-04-20 CN CNB2004800107751A patent/CN100367485C/en not_active Expired - Fee Related
- 2004-04-20 CN CNB2007101865507A patent/CN100541715C/en not_active Expired - Fee Related
-
2009
- 2009-04-20 JP JP2009102148A patent/JP5091906B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN100367485C (en) | 2008-02-06 |
| JP5091906B2 (en) | 2012-12-05 |
| CN1777986A (en) | 2006-05-24 |
| JP2009197331A (en) | 2009-09-03 |
| CN101174551A (en) | 2008-05-07 |
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