JP2001210597A - Manufacturing apparatus for semiconductor, and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus which enables unformizing of the temperature distribution of a substrate. SOLUTION: This method comprises the steps of placing a ring susceptor 12, on which a part of a base plate W can be put upon a ring-shaped recess 14 which is on the top surface of a susceptor body 11 for placing a substrate arranged in a reaction chamber, setting up a support pin 16 which can stick out from a through-hole 13 on the base of the concavity, below the ring susceptor 12 isolating the support pin 16 with the ring susceptor 12, so as to lift the ring susceptor 12 with the support pin 16, by making the susceptor body 11 descend.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor device comprising a semiconductor wafer, an LCD glass substrate and the like, and a method for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art A susceptor for mounting and heating a substrate to be processed is disposed in a reaction chamber of a semiconductor manufacturing apparatus of this kind. It can be handed over.

FIG. 9 is an explanatory view of a substrate transfer operation of a conventional susceptor described in Japanese Patent Application Laid-Open No. 6-318630.
In FIG. 9, 1 is a susceptor, 2 is a pin for pushing up,
3 is a pin hole and 5 is a base. Pin 2 is susceptor 1
The pin hole 3 is vertically movably inserted and held by the conical head 2a so as not to drop. Reference numeral 7 denotes a tweezer for transferring a substrate, and W denotes a substrate (wafer).

When loading a substrate W onto the susceptor 1,
First, the susceptor 1 is lowered as shown in (a) → (b). Then, the lower end of the pin 2 attached to the descending susceptor 1 hits the upper end of the base 5 waiting below, and the pin 2 is lifted with respect to the susceptor 1.

In this state, as shown in (b) → (c) → (d), the tweezer 7 on which the substrate W is placed is inserted horizontally above the susceptor 1, and the tweezer 7 is lowered above the susceptor 1. As a result, the substrate W on the tweezer 7 is
Hand over.

Next, as shown in (d) → (e) → (f), the tweezer 7 is returned to the original position, and the susceptor 1 is raised, so that the substrate W placed on the upper end of the pin 2 is displaced. 2
And lift it to a fixed position and hold it. In this state, the substrate W is heated to perform a predetermined process.

[0007]

By the way, in the above-mentioned conventional semiconductor manufacturing apparatus, as shown in FIG.
Is protruded below the lower surface of the susceptor 1, heat is radiated through the pin 2, and the temperature of the portion with the pin 2 is lower than that of the portion without the pin 2.
Due to the local temperature decrease, the uniformity of the temperature distribution of the substrate W on the susceptor 1 is deteriorated, and as a result, in the case of the film forming process, the uniformity of the film thickness may be impaired.

An object of the present invention is to provide a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device capable of achieving a uniform temperature distribution of a substrate in consideration of the above circumstances.

[0009]

According to a first aspect of the present invention, there is provided a semiconductor manufacturing apparatus in which a second susceptor on which a part of a substrate is mounted is mounted on a first susceptor for mounting a substrate disposed in a reaction chamber. In addition, a support pin capable of supporting the second susceptor is provided below the second susceptor, and at least one of the first susceptor and the support pin is moved up and down to move the second susceptor.
An elevating mechanism for supporting the susceptor with the support pins and elevating the susceptor relative to the first susceptor is provided.

In this apparatus, as a configuration for transferring a substrate between a transfer tweezer and a susceptor, for example,
(A) providing a support pin fixed below the second susceptor;
(B) When the first susceptor is configured to be moved up and down by the elevating mechanism, (b) when the first susceptor is fixedly provided and the support pin is configured to be moved up and down by the elevating mechanism,
(C) A case may be considered in which both the first susceptor and the support pin are relatively moved up and down by the elevating mechanism. Here, the operation will be described taking the case of (a) which is the most feasible as an example.

<Operation when Loading a Substrate onto a Susceptor> When loading a substrate held by a tweezer onto a susceptor, first, the first susceptor is lowered by an elevating mechanism.
Then, as it descends, the second susceptor resting on the first susceptor hits the upper end of the fixed support pin and stops. Therefore, by further lowering the first susceptor, the second susceptor is relatively lifted with respect to the first susceptor.

In this state, the tweezers on which the substrate is mounted from the outside are inserted at a height above the second susceptor, and at that position, the tweezers are lowered to a height below the second susceptor. Then, the substrate on the tweezer moves onto the second susceptor.

Next, the tweezer is returned to its original position at that height, and the first susceptor is raised. Then, when the first susceptor has risen to the position of the second susceptor,
The second susceptor and the substrate held thereon are mounted on the susceptor. Therefore, by further raising the first susceptor, the combined susceptor and the substrate placed thereon are lifted and held at a fixed position higher than the support pins. Then, in this state, the substrate on the susceptor is heated via the susceptor, and a predetermined process is performed.

At this time, since the support pins are separated from the susceptor, heat does not escape through the support pins, and a local temperature drop in a portion where the support pins exist as in the related art is eliminated. Therefore, the uniformity of the temperature distribution of the substrate is improved.

<Operation When Removing a Substrate from the Susceptor> When removing a substrate from the susceptor, first, the first susceptor on which the substrate is mounted is lowered. Then, as it descends, the second susceptor resting on the first susceptor,
Stops when it hits the upper end of the fixed support pin. Therefore, by further lowering the first susceptor, the second susceptor is relatively lifted with respect to the first susceptor while the substrate is placed thereon.

In this state, the tweezers are inserted from the outside to the height below the second susceptor, and the tweezers are raised to the height above the second susceptor at that position. Then,
The substrate on the second susceptor rides on the tweezer. Therefore, the substrate can be taken out by returning the tweezer to its original position at that height.

Thereafter, the first susceptor is raised, so that the second susceptor mounted on the support pin is mounted on the first susceptor. Then, by further raising the first susceptor, the integrated susceptor is lifted up to a fixed position away from the support pin and made to stand by.

According to a second aspect of the present invention, there is provided a semiconductor manufacturing apparatus comprising:
In claim 1, the second susceptor has a ring shape smaller than the diameter of the substrate. Also,
According to a third aspect of the present invention, in the semiconductor manufacturing apparatus according to the second aspect, a ring-shaped concave portion in which the second susceptor fits is provided on the upper surface of the first susceptor, and the support pin can penetrate the bottom surface of the concave portion. It is characterized by providing a simple through hole.

In this case, since the second susceptor that pushes up the substrate has a ring shape smaller than the diameter of the substrate and smaller than the width of the tweezer, when the substrate is transferred to the susceptor, the tweezer and the second susceptor do not interfere with each other. The transfer can be performed smoothly. In addition, since the structure is not such that the support pins are held by the susceptor as in the related art,
This prevents the heat from escaping through the support pins, and prevents a phenomenon in which the temperature is reduced in a portion where the support pins are present and the uniformity of the temperature distribution is impaired.

According to a fourth aspect of the present invention, there is provided a semiconductor manufacturing apparatus comprising:
The first susceptor is characterized in that the second susceptor is formed in a horseshoe shape with an open front in a substrate insertion direction so that a tweezer for transferring a substrate can be inserted. According to a fifth aspect of the present invention, in the semiconductor manufacturing apparatus, the horseshoe-shaped second susceptor is mounted on an outer peripheral portion of the first susceptor.

In this case, the second susceptor has a horseshoe shape,
Since the substrate is mounted on the outer peripheral portion of the first susceptor, when the substrate is transferred to the susceptor, the transfer can be performed smoothly without interference between the tweezers and the second susceptor. In addition, since the support pin is not structured to be held by the susceptor as in the conventional case, there is no escape of heat through the support pin,
In the portion where the support pins exist, it is possible to prevent a phenomenon that the temperature is lowered and the uniformity of the temperature distribution is impaired.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device, the substrate is placed on the susceptor of the semiconductor manufacturing apparatus according to any one of the first to fifth aspects, and the substrate is heated via the susceptor. Thus, a predetermined process is performed on the substrate.

[0023]

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 10 to 13 show schematic views of a reaction chamber constituting the single-wafer epitaxial growth apparatus of the first embodiment. 10 is a front longitudinal sectional view, FIG. 11 is a plan view, FIG. 12 is a sectional view of a gas introduction part, and FIG. 13 is a sectional view of an exhaust part.

The quartz reaction tube 31 has a tubular shape having a flat space in the horizontal direction. Transparent quartz is used for the cylindrical part, and opaque quartz is used for the flange part. An upper / lower split plate 32 for vertically dividing the reaction tube 31 is provided inside the reaction tube 31 so that a reaction gas flows in an upper portion of the reaction tube and a purge gas flows in a lower portion of the reaction tube. A gas introduction flange 33, a gas exhaust flange 34, and a rotating shaft flange (not shown) are provided at both ends and a lower end of the reaction tube 31 in an airtight manner, and the gas introduction flange 33 is further provided with a gate valve (not shown). A transfer chamber (not shown) is connected to the transfer chamber. The rotating shaft flange is connected to a rotation introducing mechanism (not shown) via a bellows (not shown). The rotation and elevation of the susceptor 11 are performed via the rotation shaft 38 and the adapter 35. Outside the susceptor 11, an outer peripheral ring 37 is mounted on the upper and lower split plates 32. The outer peripheral ring 37 is made of the same SiC or the like as the susceptor 11, and is installed for the purpose of reducing radiation heat radiation from the side surface of the susceptor 11 and reducing a decrease in the temperature of the outer peripheral portion of the substrate.

Gas introduction lines 39 and 40 communicate with the gas introduction flange 33, and the gas exhaust flange 34
Is connected to a gas exhaust line 41. An upper lamp house 46 and a lower lamp house 47 are provided above and below the reaction tube 31, and a reflection mirror 45 is provided on the left and right (up and down in FIG. 11).
The substrate W is heated uniformly by 8 and 49. A gate valve (not shown) is opened, and a substrate W is inserted from the left side in the figure by a substrate transfer robot (not shown) and placed on the susceptor 11. The substrate transfer robot retreats and a gate valve (not shown) is closed.

In the reaction tube 31, the gas introduction line 39,
After the purge gas N ₂ (or H ₂ ) is introduced from 40 and replaced, a reactive gas is introduced from one of the gas introduction lines 39, the purge gas is flowed from the other gas introduction line 40 as it is, and Exhausted. In order to ensure the uniformity of the treatment, the reaction gas is introduced from three or more ports of the gas introduction line 39 and the shower nozzle 50 and the rectifying plate 5 opened at equal pitches from both ends thereof.
1 (FIG. 12), the laminar flow becomes uniform and flows toward the gas exhaust line 41. Further, since the consumption amount of the reaction gas is different between the central portion and the outer peripheral portion of the substrate W, the rotation shaft 3
8, the substrate W on the susceptor 11 is rotated. Further, the gas introduction port is provided at the central portion 39a.
And an outer peripheral portion 39b (see FIGS. 11 and 1).
2) The respective flow rates are controlled.

In order to uniformly heat the substrate W, the upper lamp house 46 has a stronger output at the outer periphery than the center of the substrate, and the lower lamp house 47 additionally has a measure to escape heat from the rotating shaft 38. The output at the center is also adjusted to be strong. Further, the rotation shaft 38 and the susceptor 1
A purge gas flows under the upper and lower split plates 32 so that unnecessary film formation does not grow below the lower part 1. Furthermore,
The surface of the reaction tube 31 is air-cooled by a blower (not shown) so that film formation does not proceed on the inner surface of the reaction tube. Substrate W
Is completed, the gate valve (not shown) is opened, and the substrate is transferred by the substrate transfer robot.

FIGS. 1 and 2 show the structure of the susceptor provided in the reaction chamber of the above-described epitaxial growth apparatus and its surroundings. 1 and 2, reference numeral 11 denotes a disk-shaped susceptor main body (first susceptor) constituting a main part of a substrate mounting susceptor; 12, a ring susceptor (second susceptor) on which a part of the substrate W is mounted; Is the bottom of the reaction chamber (reaction tube).

An upright edge 11a is provided on the outer peripheral portion of the upper surface of the disc-shaped susceptor body 11, and the upper surface on the inner peripheral side of the upright edge 11a is a substrate mounting surface. The substrate mounting surface of the susceptor body 11 has a ring-shaped recess 1 concentric with the circular substrate mounting surface.
The ring susceptor 12 is accommodated in the recess 14. The ring susceptor 12 has a diameter smaller than that of the substrate W and is set to a size that does not interfere with the tweezers 7 as shown in FIG. Are flush with the substrate mounting surface of the first susceptor 11.

Three through holes 13 are formed in the bottom surface of the recess 14 at regular intervals in the circumferential direction, and each of the through holes 13 is erected on the bottom 15 of the reaction chamber at a predetermined distance below each through hole 13. The upper end of the support pin 16 is located. Then, as shown in FIGS. 1B and 2, the ring susceptor 12 can be supported in a well-balanced manner at the upper end of the support pin 16 protruding from the through hole 13 by raising and lowering the susceptor body 11 by a lifting mechanism (not shown). It has become.

Next, the transfer operation of the substrate W will be described with reference to the perspective view of FIG. 4 and the sectional view of FIG. FIG.
And (a) to (d) of FIG. 5 show operations corresponding to each other.

<Operation When Removing Substrate from Susceptor> When removing the processed substrate W from the susceptor to the outside, first, the susceptor body 11 on which the substrate W is mounted is lowered by the lifting mechanism as shown in FIG. Let it. Then,
As shown in (b), the ring susceptor 12 placed on the susceptor body 11 hits the upper end of the support pin 16 and stops.
Further, by lowering the susceptor main body 11, the ring susceptor 12 is relatively lifted with respect to the susceptor main body 11 with the substrate W mounted thereon.

In this state, as shown in (c), the tweezers 7 are inserted from the outside to the height below the ring susceptor 12, and the tweezers 7 are raised to the height above the ring susceptor 12 at that position. Then, the substrate W on the ring susceptor 12 moves onto the tweezer 7 as shown in FIG. Therefore, the substrate W can be taken out by returning the tweezer 7 to its original position at that height.

After being taken out, the susceptor main body 11 is raised, so that the ring susceptor 12 mounted on the support pin 16 is transferred onto the susceptor main body 11, and the susceptor main body 11 is further raised. The integrated susceptor is lifted up to a fixed position away from the support pin 16 to be on standby.

<Operation when Loading Substrate onto Susceptor> When loading the substrate W held by the tweezers 7 onto the susceptor, the susceptor main body 11 is lowered from the standby position by the lifting mechanism. Then, the susceptor body 11
The ring susceptor 12 placed on the support pin 1
The ring susceptor 12 is lifted relatively to the susceptor body 11 by stopping at the upper end of the susceptor 6 and further lowering the susceptor body 11.

In this state, the tweezers 7 on which the substrate is placed from the outside are inserted at a height above the ring susceptor 12, and
At that position, the tweezers 7 are lowered to a level below the ring susceptor 12. Then, the substrate W on the tweezers 7 moves onto the ring susceptor 12.

Next, the tweezer 7 is returned to its original position at that height, and the susceptor body 11 is raised. Then, when the susceptor body 11 rises to the position of the ring susceptor 12, the ring susceptor 12 and the substrate W held thereon are mounted on the susceptor body 11. Therefore, by further raising the susceptor body 11,
The combined susceptor and the substrate W placed thereon are lifted and held to a fixed position higher than the support pins 16.

The substrate W thus held on the susceptor main body 11 and the ring susceptor 12 is heated through the susceptor main body 11 and the ring susceptor 12 to perform a predetermined process on the substrate W in the reaction chamber. Is applied.

At this time, the support pins 16 are attached to the susceptor body 1.
1 and the ring susceptor 12 are on standby, so there is no escape of heat through the support pins 16,
The conventional local temperature drop in the portion where the support pin exists is eliminated. Therefore, the uniformity of the temperature distribution of the substrate W is improved.

Next, a second embodiment of the present invention will be described.

FIGS. 6 and 7 show a susceptor provided in a reaction chamber of the semiconductor manufacturing apparatus according to the second embodiment and a configuration around the susceptor. 6 and 7, reference numeral 21 denotes a susceptor body (first susceptor) constituting a main portion of the substrate mounting susceptor, 22 denotes a horseshoe-shaped susceptor (second susceptor) on which a part of the outer periphery of the substrate W is mounted, and 25 denotes This is the bottom of the reaction chamber (reaction tube).

Susceptor body 21 and horseshoe-shaped susceptor 22
Is formed into a disc shape by combining the two, the horseshoe-shaped susceptor 22 has a shape obtained by cutting out a certain angular range of the outer peripheral portion of the disc, and the susceptor body 21 is
Notch 21 into which horseshoe-shaped susceptor 22 just fits
b.

The horseshoe-shaped susceptor 22 includes a susceptor body 21.
The upper and lower surfaces of the susceptor body 2
Because the susceptor body 21 is placed flush with the first side, the upper surface of the susceptor body 21 has a recess 2
1c is provided, and a convex portion 22b that fits into the concave portion 21c is provided on the inner peripheral portion of the horseshoe-shaped susceptor 22. The horseshoe-shaped susceptor 22 is placed on the outer periphery of the susceptor body 21 with the upper and lower surfaces 22c flush with the susceptor body 21 side. Further, on the upper surfaces of the outer peripheral portions of the susceptor body 21 and the horseshoe-shaped susceptor 22, standing edges 21a and 22b are provided so as to be continuous over the entire periphery.
The upper surface on the inner peripheral side of 22a is the mounting surface of the substrate.

Here, the horseshoe-shaped susceptor 22 is formed in such a size that the outer peripheral portion of the substrate W can be placed with good balance. However, as shown in FIG. 6, a predetermined dimension is opened forward in the substrate insertion direction so that the tweezers 7 for transferring the substrate W can be inserted.

Below the horseshoe-shaped susceptor 22, the upper ends of three support pins 26 erected at the bottom 25 of the reaction chamber are located at a predetermined distance. And FIG.
As shown in (b), by raising and lowering the susceptor main body 21 by a lifting mechanism (not shown), the upper end of the support pin 26 can support the horseshoe-shaped susceptor 22 in a well-balanced manner.

Next, the transfer operation of the substrate W will be described with reference to FIG.

<Operation when Loading Substrate onto Susceptor> When loading the substrate W held by the tweezers 7 onto the susceptor, the susceptor body 21 is lowered by the lifting mechanism as shown in FIG. Then, the horseshoe-shaped susceptor 22 mounted on the outer peripheral portion of the susceptor main body 21 stops at the upper end of the fixed support pin 26 as shown in FIG. 2B, and is further lowered by lowering the susceptor main body 21. The susceptor body 21 is lifted.

In this state, the tweezer 7 on which the substrate is mounted from the outside is inserted at a height above the horseshoe-shaped susceptor 22,
At that position, the tweezers 7 are lowered to a level below the horseshoe-shaped susceptor 22, as shown in (c) and (d). Then, the substrate W on the tweezer 7 moves onto the horseshoe-shaped susceptor 22.

Next, as shown in (e) → (f), the tweezer 7 is returned to its original position at that height, and the susceptor body 21 is raised. Then, when the susceptor body 21 rises to the position of the horseshoe-shaped susceptor 22, the susceptor body 2
The horseshoe-shaped susceptor 22 and the substrate W held on the susceptor 22 are mounted on 1. Therefore, by further raising the susceptor body 21, the combined susceptor and the substrate W placed thereon are lifted and held at a fixed position higher than the support pins 26.

The substrate W thus held on the susceptor body 21 and the horseshoe-shaped susceptor 22 is heated through the susceptor body 21 and the horseshoe-shaped susceptor 22 so that the substrate W is subjected to a predetermined treatment in the reaction chamber. Is applied.

At this time, the support pins 26 are connected to the susceptor body 2.
1 and a standby position away from the horseshoe-shaped susceptor 22, there is no escape of heat through the support pin 26,
The conventional local temperature drop in the portion where the support pin exists is eliminated. Therefore, the uniformity of the temperature distribution of the substrate W is improved.

<Operation for Removing Substrate from Susceptor> When removing the processed substrate W from the susceptor to the outside, first, the susceptor body 21 on which the substrate W is placed is lowered by the lifting mechanism. Then, the susceptor body 21
The horseshoe-shaped susceptor 22 rests on the upper end of the support pin 26 and stops, and the susceptor body 21 is further lowered, so that the horseshoe-shaped susceptor 22 is relatively lifted with respect to the susceptor body 21 with the substrate W placed thereon.

In this state, the tweezers 7 are inserted from the outside to the height below the horseshoe-shaped susceptor 22, and the tweezers 7 are raised to the height above the horseshoe-shaped susceptor 22 at that position. Then, the substrate W on the horseshoe-shaped susceptor 22 moves onto the tweezers 7. Therefore, the tweezer 7 at that height
By returning to the original position, the substrate W can be taken out.

After being taken out, the susceptor main body 21 is raised, so that the horseshoe-shaped susceptor 22 mounted on the support pin 26 is transferred onto the susceptor main body 21, and the susceptor main body 21 is further raised. The integrated susceptor is lifted up to a fixed position away from the support pin 26 and waits.

[0056]

As described above, according to the present invention,
Since the support pins are provided separately from the susceptor, heat radiation through the support pins can be prevented, a local temperature decrease of the susceptor can be prevented, and the uniformity of the temperature distribution of the substrate can be improved. Can be. Therefore, in the case of forming a film, it is possible to contribute to uniformity of the film thickness and film quality. In addition, since the support pins are separated from the susceptor, dust generation can be reduced, and in that respect, it can also contribute to improvement in processing quality. In addition, since the substrate is lifted by the second susceptor, unlike the case where the substrate is directly lifted by the pins, unnecessary stress concentration is not applied to the substrate. When the second susceptor is formed in a ring shape or a horseshoe shape,
When the substrate is transferred, the transfer can be performed smoothly without interference between the second susceptor and the tweezers, and the structure is simple and the cost can be reduced.

[Brief description of the drawings]

FIGS. 1A and 1B are cross-sectional views illustrating a susceptor and a configuration around the susceptor according to a first embodiment of the present invention, wherein FIG. 1A illustrates a state before a susceptor body (first susceptor) is lowered, and FIG. It is a figure showing the state after having made it.

FIG. 2 is a perspective view showing a configuration of a susceptor and its periphery in the embodiment.

FIG. 3 is a plan view showing a relationship between a ring susceptor (second susceptor) and a tweezer in the embodiment.

FIG. 4 is a perspective view for explaining the operation of the embodiment.

FIG. 5 is a sectional view for explaining the operation of the embodiment.

FIG. 6 is a plan view of a susceptor according to a second embodiment of the present invention.

FIGS. 7A and 7B are cross-sectional views showing the configuration of the susceptor and its surroundings in the same embodiment, wherein FIG. 7A shows a state before the susceptor body is lowered, and FIG. 7B shows a state after the susceptor body is lowered. is there.

FIG. 8 is a sectional view for explaining the operation of the embodiment.

FIG. 9 is a sectional view for explaining the operation of the conventional example.

FIG. 10 is a front vertical sectional view of the reaction chamber according to the first embodiment of the present invention.

FIG. 11 is a plan view of a reaction chamber in the same embodiment.

FIGS. 12A and 12B show a gas introduction portion of the reaction chamber in the same embodiment, where FIG. 12A is a cross-sectional view and FIG.

FIGS. 13A and 13B are explanatory views of an exhaust portion of the reaction chamber in the same embodiment, where FIG. 13A is a cross-sectional view and FIG.

[Explanation of symbols]

 W substrate 7 Tweezer 11 Susceptor body (first susceptor) 12 Ring susceptor (second susceptor) 13 Through hole 14 Recess 16 Support pin 21 Susceptor body (first susceptor) 22 Horseshoe susceptor (second susceptor) 26 Support pin

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Katsuhisa Kasagi 3--14-20 Higashinakano, Nakano-ku, Tokyo International Electric Company (72) Inventor Toshimitsu Miyata 3-14-20 Higashinakano, Nakano-ku, Tokyo International Inside Electric Co., Ltd. (72) Inventor Shinichi Shimada 3-14-20 Higashinakano, Nakano-ku, Tokyo International Electric Co., Ltd. MA28 5F045 BB02 BB08 BB14 DP04 DP28 DQ06 EB08 EC07 EE14 EE20 EF05 EF14 EK11 EK21 EK27 EM02 EM10 EN04

Claims (6)

[Claims] A first substrate mounting means disposed in a reaction chamber;
A second susceptor on which a part of the substrate is mounted is placed on the susceptor, a support pin capable of supporting the second susceptor is provided below the second susceptor, and at least one of the first susceptor and the support pin is raised and lowered. The semiconductor manufacturing apparatus is provided with an elevating mechanism for supporting the second susceptor with a support pin and elevating the second susceptor relative to the first susceptor. 2. The semiconductor manufacturing apparatus according to claim 1, wherein said second susceptor has a ring shape smaller than a diameter of said substrate. 3. The device according to claim 1, wherein a ring-shaped concave portion into which the second susceptor fits is provided on an upper surface of the first susceptor, and a through hole through which the support pin can penetrate is provided on a bottom surface of the concave portion. Item 3. A semiconductor manufacturing apparatus according to item 2. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the second susceptor is formed in a horseshoe shape having a front opening in a substrate insertion direction so that a tweezer for transferring a substrate can be inserted. 5. The horseshoe-shaped second susceptor includes the first susceptor.
The semiconductor manufacturing apparatus according to claim 4, wherein the semiconductor manufacturing apparatus is mounted on an outer peripheral portion of the susceptor. 6. A method for manufacturing a semiconductor device, comprising: mounting a substrate on a susceptor of the semiconductor manufacturing apparatus according to claim 1; and performing a predetermined process on the substrate.